data_[V8Ga10Si2]
loop_
 _atom_type_symbol
 _atom_type_electronegativity
 _atom_type_radius
 _atom_type_ionic_radius
[
  V  1.6300  1.3500  0.7775
  Ga  1.8100  1.3000  0.7600
  Si  1.9000  1.1000  0.5400
]
_symmetry_space_group_name_H-M [C2/m]
_cell_length_a [13.8352]
_cell_length_b [3.6432]
_cell_length_c [6.3445]
_cell_angle_alpha [90.0000]
_cell_angle_beta [103.4146]
_cell_angle_gamma [90.0000]
_symmetry_Int_Tables_number [12]
_chemical_formula_structural [V4Ga5Si]
_chemical_formula_sum '[V8 Ga10 Si2]'
_cell_volume [311.0636]
_cell_formula_units_Z [2]
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
[
  V  V0  4  0.0225  0.0000  0.2458  1
  V  V1  4  0.1745  0.5000  0.9832  1
  Ga  Ga2  4  0.1522  0.0000  0.6688  1
  Ga  Ga3  4  0.2086  0.0000  0.3004  1
  Ga  Ga4  2  0.0000  0.5000  0.5000  1
  Si  Si5  2  0.0000  0.5000  0.0000  1
]