data_[Ga4Si4F16]
loop_
 _atom_type_symbol
 _atom_type_electronegativity
 _atom_type_radius
 _atom_type_ionic_radius
[
  Ga  1.8100  1.3000  0.7600
  Si  1.9000  1.1000  0.5400
  F  3.9800  0.5000  0.7050
]
_symmetry_space_group_name_H-M [C2/c]
_cell_length_a [9.0106]
_cell_length_b [3.7179]
_cell_length_c [15.8200]
_cell_angle_alpha [90.0000]
_cell_angle_beta [93.3860]
_cell_angle_gamma [90.0000]
_symmetry_Int_Tables_number [15]
_chemical_formula_structural [GaSiF4]
_chemical_formula_sum '[Ga4 Si4 F16]'
_cell_volume [529.0432]
_cell_formula_units_Z [4]
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
[
  Ga  Ga0  4  0.2500  0.2500  0.5000  1
  Si  Si1  4  0.0000  0.1297  0.7500  1
  F  F2  8  0.0470  0.3611  0.6717  1
  F  F3  8  0.1387  0.1056  0.2824  1
]