data_[Ga1Si3C3N1]
loop_
 _atom_type_symbol
 _atom_type_electronegativity
 _atom_type_radius
 _atom_type_ionic_radius
[
  Ga  1.8100  1.3000  0.7600
  Si  1.9000  1.1000  0.5400
  C  2.5500  0.7000  0.3000
  N  3.0400  0.6500  0.6300
]
_symmetry_space_group_name_H-M [Pm]
_cell_length_a [5.1056]
_cell_length_b [3.1117]
_cell_length_c [5.3989]
_cell_angle_alpha [90.0000]
_cell_angle_beta [90.2484]
_cell_angle_gamma [90.0000]
_symmetry_Int_Tables_number [6]
_chemical_formula_structural [GaSi3C3N]
_chemical_formula_sum '[Ga1 Si3 C3 N1]'
_cell_volume [85.7721]
_cell_formula_units_Z [1]
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
[
  Ga  Ga0  1  0.5085  0.5000  0.1633  1.0
  Si  Si1  1  0.0014  0.5000  0.8309  1.0
  Si  Si2  1  0.0082  0.0000  0.3373  1.0
  Si  Si3  1  0.4974  0.0000  0.6653  1.0
  C  C4  1  0.3709  0.5000  0.8154  1.0
  C  C5  1  0.8718  0.0000  0.6645  1.0
  C  C6  1  0.9039  0.5000  0.1693  1.0
  N  N7  1  0.3661  0.0000  0.3540  1.0
]