The Internal Mechanism Of NAND-FLASH
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- NAND-FLASH memory can be read a page at a time.
- it can be programmed in only one way - changing a bit from 1 to 0.
- Changing back to 1 can be done only in large blocks (e.g. 512KB).
- The last operation is called "erasing a block".
- This means flash is much faster in reading, then in writing
- (because a write might require erasing the entire block, and
re-programming its contents..)
- FLASH has one great limitation - each cell may be programmed up to 100,000
times (in SLC) or less (in MLC - where each cell stores 2 or more bits).
- After this - the cell deteriorates and looses its data.
- If we have a "hot-spot" location with many writes - this could be a real
problem real fast.