Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy
Byeong Ju Bae, Sung Hoon Hong, Seon Yong Hwang, Jae Yeon Hwang, Ki Yeon Yang, Heon Lee
The electrical characteristic of phase change material was studied in nano-scale using nanoimprint lithography and a conducting atomic force microscopy measurement system. Nanoimprint lithography was used to fabricate the nano-scale phase change material pattern. A Pt-coated AFM tip was used as a top electrode to measure the electrical characteristics of the GST nano-pillar. The GST nano-pillar, which is 200 nm in diameter, was amorphized by 2 V and 5 ns reset pulse and was then brought back to the crystalline phase by applying 1.3 V and 150 ns set pulse. Using this measurement system, the GST nano-pillar was switched between the amorphous and crystalline phases more than five times. The results of the reset and the set current measurement with the GST nano-pillar sizes show that the reset and the set currents also decreased with the decrease of the GST pillar size.
Semiconductor Science and Technology
https://doi.org/10.1088/0268-1242/24/7/075016
10.1088/0268-1242/24/7/075016
Dive into the research topics of 'Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy'. Together they form a unique fingerprint.
Nanoimprint lithography Engineering & Materials Science 100%
Conductive Atomic Force Microscopy Chemical Compounds 99%
Atomic force microscopy Engineering & Materials Science 81%
Phase Change Material Chemical Compounds 81%
Phase change materials Engineering & Materials Science 71%
Crystalline materials Engineering & Materials Science 67%
phase change materials Physics & Astronomy 54%
atomic force microscopy Physics & Astronomy 49%
Bae, B. J., Hong, S. H., Hwang, S. Y., Hwang, J. Y., Yang, K. Y., & Lee, H. (2009). Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy. Semiconductor Science and Technology, 24(7), [075016]. https://doi.org/10.1088/0268-1242/24/7/075016
Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy. / Bae, Byeong Ju; Hong, Sung Hoon; Hwang, Seon Yong et al.
In: Semiconductor Science and Technology, Vol. 24, No. 7, 075016, 2009.
Bae, BJ, Hong, SH, Hwang, SY, Hwang, JY, Yang, KY & Lee, H 2009, 'Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy', Semiconductor Science and Technology, vol. 24, no. 7, 075016. https://doi.org/10.1088/0268-1242/24/7/075016
Bae BJ, Hong SH, Hwang SY, Hwang JY, Yang KY, Lee H. Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy. Semiconductor Science and Technology. 2009;24(7):075016. doi: 10.1088/0268-1242/24/7/075016
Bae, Byeong Ju ; Hong, Sung Hoon ; Hwang, Seon Yong et al. / Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy. In: Semiconductor Science and Technology. 2009 ; Vol. 24, No. 7.
@article{6991304a468e4aaa925c65925fe2fb66,
title = "Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy",
abstract = "The electrical characteristic of phase change material was studied in nano-scale using nanoimprint lithography and a conducting atomic force microscopy measurement system. Nanoimprint lithography was used to fabricate the nano-scale phase change material pattern. A Pt-coated AFM tip was used as a top electrode to measure the electrical characteristics of the GST nano-pillar. The GST nano-pillar, which is 200 nm in diameter, was amorphized by 2 V and 5 ns reset pulse and was then brought back to the crystalline phase by applying 1.3 V and 150 ns set pulse. Using this measurement system, the GST nano-pillar was switched between the amorphous and crystalline phases more than five times. The results of the reset and the set current measurement with the GST nano-pillar sizes show that the reset and the set currents also decreased with the decrease of the GST pillar size.",
author = "Bae, {Byeong Ju} and Hong, {Sung Hoon} and Hwang, {Seon Yong} and Hwang, {Jae Yeon} and Yang, {Ki Yeon} and Heon Lee",
doi = "10.1088/0268-1242/24/7/075016",
journal = "Semiconductor Science and Technology",
T1 - Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy
AU - Bae, Byeong Ju
AU - Hong, Sung Hoon
AU - Hwang, Seon Yong
AU - Hwang, Jae Yeon
AU - Yang, Ki Yeon
AU - Lee, Heon
N2 - The electrical characteristic of phase change material was studied in nano-scale using nanoimprint lithography and a conducting atomic force microscopy measurement system. Nanoimprint lithography was used to fabricate the nano-scale phase change material pattern. A Pt-coated AFM tip was used as a top electrode to measure the electrical characteristics of the GST nano-pillar. The GST nano-pillar, which is 200 nm in diameter, was amorphized by 2 V and 5 ns reset pulse and was then brought back to the crystalline phase by applying 1.3 V and 150 ns set pulse. Using this measurement system, the GST nano-pillar was switched between the amorphous and crystalline phases more than five times. The results of the reset and the set current measurement with the GST nano-pillar sizes show that the reset and the set currents also decreased with the decrease of the GST pillar size.
AB - The electrical characteristic of phase change material was studied in nano-scale using nanoimprint lithography and a conducting atomic force microscopy measurement system. Nanoimprint lithography was used to fabricate the nano-scale phase change material pattern. A Pt-coated AFM tip was used as a top electrode to measure the electrical characteristics of the GST nano-pillar. The GST nano-pillar, which is 200 nm in diameter, was amorphized by 2 V and 5 ns reset pulse and was then brought back to the crystalline phase by applying 1.3 V and 150 ns set pulse. Using this measurement system, the GST nano-pillar was switched between the amorphous and crystalline phases more than five times. The results of the reset and the set current measurement with the GST nano-pillar sizes show that the reset and the set currents also decreased with the decrease of the GST pillar size.
U2 - 10.1088/0268-1242/24/7/075016
DO - 10.1088/0268-1242/24/7/075016
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology