Dominant free-exciton recombination radiation in chemical vapor deposited diamonds
Hiroshi Kawarada, Takahiro Tsutsumi, Hiroki Hirayama, Akira Yamaguchi
Dominant free-exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO2 diluted with hydrogen. The concentration of CO2 and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free-exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO2. The value is the highest ever reported in diamond.
https://doi.org/10.1063/1.111126
crystallinity
Kawarada, H., Tsutsumi, T., Hirayama, H., & Yamaguchi, A. (1994). Dominant free-exciton recombination radiation in chemical vapor deposited diamonds. Applied Physics Letters, 64(4), 451-453. https://doi.org/10.1063/1.111126
Dominant free-exciton recombination radiation in chemical vapor deposited diamonds. / Kawarada, Hiroshi; Tsutsumi, Takahiro; Hirayama, Hiroki; Yamaguchi, Akira.
In: Applied Physics Letters, Vol. 64, No. 4, 1994, p. 451-453.
Kawarada, H, Tsutsumi, T, Hirayama, H & Yamaguchi, A 1994, 'Dominant free-exciton recombination radiation in chemical vapor deposited diamonds', Applied Physics Letters, vol. 64, no. 4, pp. 451-453. https://doi.org/10.1063/1.111126
Kawarada H, Tsutsumi T, Hirayama H, Yamaguchi A. Dominant free-exciton recombination radiation in chemical vapor deposited diamonds. Applied Physics Letters. 1994;64(4):451-453. https://doi.org/10.1063/1.111126
Kawarada, Hiroshi ; Tsutsumi, Takahiro ; Hirayama, Hiroki ; Yamaguchi, Akira. / Dominant free-exciton recombination radiation in chemical vapor deposited diamonds. In: Applied Physics Letters. 1994 ; Vol. 64, No. 4. pp. 451-453.
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title = "Dominant free-exciton recombination radiation in chemical vapor deposited diamonds",
abstract = "Dominant free-exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO2 diluted with hydrogen. The concentration of CO2 and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free-exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO2. The value is the highest ever reported in diamond.",
author = "Hiroshi Kawarada and Takahiro Tsutsumi and Hiroki Hirayama and Akira Yamaguchi",
doi = "10.1063/1.111126",
T1 - Dominant free-exciton recombination radiation in chemical vapor deposited diamonds
AU - Kawarada, Hiroshi
AU - Tsutsumi, Takahiro
AU - Hirayama, Hiroki
AU - Yamaguchi, Akira
N2 - Dominant free-exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO2 diluted with hydrogen. The concentration of CO2 and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free-exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO2. The value is the highest ever reported in diamond.
AB - Dominant free-exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO2 diluted with hydrogen. The concentration of CO2 and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free-exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO2. The value is the highest ever reported in diamond.
U2 - 10.1063/1.111126
DO - 10.1063/1.111126
10.1063/1.111126