Volume 664: symposium a – amorphous and heterogeneous silico...
In Situ Probing and Atomistic S...
Cited by 16
Sriraman, Saravanapriyan Aydil, Eray S. and Maroudas, Dimitrios 2002. Atomic-scale analysis of deposition and characterization ofa-Si:H thin films grown from SiH radical precursor. Journal of Applied Physics, Vol. 92, Issue. 2, p. 842.
Takano, Akihiro Wada, Takehito Fujikake, Shinji Yoshida, Takashi Ohto, Tokio and Aydil, Eray S. 2003. Reaction Control in Amorphous Silicon Film Deposition by Hydrogen Chloride. MRS Proceedings, Vol. 762, Issue. ,
Johnson, Todd R. Ganguly, Gautam Wood, George S. and Carlson, David E. 2003. Investigation of the Causes and Variation of Leakage Currents in Amorphous Silicon P-I-N Diodes. MRS Proceedings, Vol. 762, Issue. ,
Sriraman, Saravanapriyan Aydil, Eray S. and Maroudas, Dimitrios 2004. Growth and characterization of hydrogenated amorphous silicon thin films from SiH2 radical precursor: Atomic-scale analysis. Journal of Applied Physics, Vol. 95, Issue. 4, p. 1792.
Agarwal, Sumit Hoex, Bram van de Sanden, M.C.M. Maroudas, Dimitrios and Aydil, Eray S. 2004. Hydrogen in Si–Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue. 6, p. 2719.
Valipa, Mayur S. Aydil, Eray S. and Maroudas, Dimitrios 2004. Atomistic calculation of the SiH3 surface reactivity during plasma deposition of amorphous silicon thin films. Surface Science, Vol. 572, Issue. 2-3, p. L339.
Aydil, Eray S. Agarwal, Sumit Valipa, Mayur Sriraman, Saravanapriyan and Maroudas, Dimitrios 2004. Surface Processes during Growth of Hydrogenated Amorphous Silicon. MRS Proceedings, Vol. 808, Issue. ,
Agarwal, Sumit Valipa, Mayur S. Hoex, Bram van de Sanden, M.C.M. Maroudas, Dimitrios and Aydil, Eray S. 2005. Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces. Surface Science, Vol. 598, Issue. 1-3, p. 35.
Valipa, Mayur S. Sriraman, Saravanapriyan Aydil, Eray S. and Maroudas, Dimitrios 2005. Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin films. Surface Science, Vol. 574, Issue. 2-3, p. 123.
Valipa, Mayur S. Bakos, Tamas and Maroudas, Dimitrios 2006. Surface smoothness of plasma-deposited amorphous silicon thin films: Surface diffusion of radical precursors and mechanism of Si incorporation. Physical Review B, Vol. 74, Issue. 20,
Sriraman, Saravanapriyan Valipa, Mayur S. Aydil, Eray S. and Maroudas, Dimitrios 2006. Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with H2 plasmas. Journal of Applied Physics, Vol. 100, Issue. 5, p. 053514.
Valipa, Mayur S. Sriraman, Saravanapriyan Aydil, Eray S. and Maroudas, Dimitrios 2006. Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds. Journal of Applied Physics, Vol. 100, Issue. 5, p. 053515.
Bakos, Tamas Valipa, Mayur S. and Maroudas, Dimitrios 2006. First-principles theoretical analysis of silyl radical diffusion on silicon surfaces. The Journal of Chemical Physics, Vol. 125, Issue. 10, p. 104702.
Bakos, Tamas Valipa, Mayur S. and Maroudas, Dimitrios 2007. Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces. The Journal of Chemical Physics, Vol. 126, Issue. 11, p. 114704.
Singh, Tejinder Valipa, Mayur S. Mountziaris, T. J. and Maroudas, Dimitrios 2007. First-principles theoretical analysis of sequential hydride dissociation on surfaces of silicon thin films. Applied Physics Letters, Vol. 90, Issue. 25, p. 251915.
Singh, Tejinder Valipa, Mayur S. Mountziaris, T. J. and Maroudas, Dimitrios 2007. Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films. The Journal of Chemical Physics, Vol. 127, Issue. 19, p. 194703.
Volume 664 (Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001)
2001 , A1.1
In Situ Probing and Atomistic Simulation of a-Si:H Plasma Deposition
Eray S. Aydil (a1), Dimitrios Maroudas (a1), Denise C. Marra (a1), W. M. M. Kessels (a2), Sumit Agarwal (a1), Shyam Ramalingam (a1), Saravanapriyan Sriraman (a1), M. C. M. Van de Sanden (a2) and Akihiro Takano (a1) (a3)...
Chemical Engineering Department, University of California Santa Barbara, Santa Barbara, CA 93106, U. S. A.
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Permanent Address: Fuji Electric Corporate Research and Development, Ltd., 2-2-1, Nagasaka, Yokusuka-City 240-0194, Japan
DOI: https://doi.org/10.1557/PROC-664-A1.1
Published online by Cambridge University Press: 17 March 2011
Hydrogenated amorphous silicon thin films deposited from SiH4 containing plasmas are used in solar cells and thin film transistors for flat panel displays. Understanding the fundamental microscopic surface processes that lead to Si deposition and H incorporation is important for controlling the film properties. An in situ method based on attenuated total internal reflection Fourier transform infrared (ATR-FTIR) spectroscopy was developed and used to determine the surface coverage of silicon mono-, di-, and tri-hydrides as a function of deposition temperature and ion bombardment flux. Key reactions that take place on the surface during deposition are hypothesized based on the evolution of the surface hydride composition as a function of temperature and ion flux. In conjunction with the experiments, the growth of a-Si:H on H-terminated Si(001)-(2×1) surfaces was simulated through molecular dynamics. The simulation results were compared with experimental measurements to validate the simulations and to provide supporting evidence for radical-surface interaction mechanisms hypothesized based on the infrared spectroscopy data. Experimental measurements of the surface silicon hydride coverage and atomistic simulations are used synergistically to elucidate elementary processes occurring on the surface during a-Si:H deposition.
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