Volume 449: symposium n – iii-v nitrides
III-V Nitride Growth by Atmosph...
Akutsu, N. Tokunaga, H. Waki, I. Yamaguchi, A. and Matsumoto, K. 1997. Epitaxial Growth and Properties of Mg-Doped Gan Film Produced by Atmospheric Mocvd System With Three Layered Lammar Flow Gas Injection. MRS Proceedings, Vol. 482, Issue. ,
Tokunaga, H Waki, I Yamaguchi, A Akutsu, N and Matsumoto, K 1998. Growth condition dependence of Mg-doped GaN film grown by horizontal atmospheric MOCVD system with three layered laminar flow gas injection. Journal of Crystal Growth, Vol. 189-190, Issue. , p. 519.
Lin, Heng-Ching Shu, Chen-Ke Ou, Jehn Pan, Yung-Chung Chen, Wei-Kuo Chen, Wen-Hsiung and Lee, Ming-Chih 1998. Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescence. Journal of Crystal Growth, Vol. 189-190, Issue. , p. 57.
Kern, R.S. Götz, W. Chen, C.H. Liu, H. Fletcher, R.M. and Kuo, C.P. 1999. Electroluminescence I. Vol. 64, Issue. , p. 129.
Tachibana, A. Makino, O. Tanimura, S. Tokunaga, H. Akutsu, N. and Matsumoto, K. 1999. Quantum Chemical Studies of Gas Phase Reactions between TMA, TMG, TMI and NH3. physica status solidi (a), Vol. 176, Issue. 1, p. 699.
Makino, Osamu Nakamura, Koichi Tachibana, Akitomo Tokunaga, Hiroki Akutsu, Nakao and Matsumoto, Koh 2000. Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation. Applied Surface Science, Vol. 159-160, Issue. , p. 374.
Nakamura, Koichi Hayashi, Tensei Tachibana, Akitomo and Matsumoto, Koh 2000. Regional density functional theory for crystal growth in GaN. Journal of Crystal Growth, Vol. 221, Issue. 1-4, p. 765.
Nakamura, Koichi Makino, Osamu Tachibana, Akitomo and Matsumoto, Koh 2000. Quantum chemical study of parasitic reaction in III–V nitride semiconductor crystal growth. Journal of Organometallic Chemistry, Vol. 611, Issue. 1-2, p. 514.
Murata, S. Ikenaga, M. Nakamura, K. Tachibana, A. and Matsumoto, K. 2001. First-Principle Theoretical Study on Epitaxial Crystal Growth of GaN. physica status solidi (a), Vol. 188, Issue. 2, p. 579.
Ikenaga, Masahito Nakamura, Koichi Tachibana, Akitomo and Matsumoto, Koh 2002. Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III–V nitride semiconductor crystal growth. Journal of Crystal Growth, Vol. 237-239, Issue. , p. 936.
Matsumoto, Koh and Tachibana, Akitomo 2004. Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design. Journal of Crystal Growth, Vol. 272, Issue. 1-4, p. 360.
Tokunaga, H. Ubukata, A. Yano, Y. Yamaguchi, A. Akutsu, N. Yamasaki, T. and Matsumoto, K. 2004. Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system. Journal of Crystal Growth, Vol. 272, Issue. 1-4, p. 348.
Okada, Takanobu Doi, Kentaro Nakamura, Koichi and Tachibana, Akitomo 2004. Quantum chemical study on substituent effect of gas-phase reactions in III–V nitride semiconductor crystal growth. physica status solidi (b), Vol. 241, Issue. 12, p. 2744.
Matsumoto, Koh Tokunaga, Hiroki Ubukata, Akinori Ikenaga, Kazumasa Fukuda, Yasushi Tabuchi, Toshiya Kitamura, Yuichiro Koseki, Shuichi Yamaguchi, Akira and Uematsu, Kunimasa 2008. High growth rate metal organic vapor phase epitaxy GaN. Journal of Crystal Growth, Vol. 310, Issue. 17, p. 3950.
Chang, J. Hong, S. -K. Matsumoto, K. Tokunaga, H. Tachibana, A. Lee, S. W. and Cho, M. -W. 2009. Oxide and Nitride Semiconductors. Vol. 12, Issue. , p. 67.
Matsumoto, K. Tokunaga, H. Ubukata, A. Ikenaga, K. Fukuda, Y. Yano, Y. Tabuchi, T. Kitamura, Y. Koseki, S. Yamaguchi, A. and Uematsu, K. 2010. Technology of Gallium Nitride Crystal Growth. Vol. 133, Issue. , p. 119.
Yano, Yoshiki Tokunaga, Hiroki Shimamura, Hayato Yamaoka, Yuya Ubukata, Akinori Tabuchi, Toshiya and Matsumoto, Koh 2013. Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool. Japanese Journal of Applied Physics, Vol. 52, Issue. 8S, p. 08JB06.
Koizumi, Atsushi Kawabata, Kosuke Lee, Dong-gun Nishikawa, Atsushi Terai, Yoshikazu Ofuchi, Hironori Honma, Tetsuo and Fujiwara, Yasufumi 2015. In situ Eu doping into AlxGa1−xN grown by organometallic vapor phase epitaxy to improve luminescence properties. Optical Materials, Vol. 41, Issue. , p. 75.
Ikenaga, Kazutada Mishima, Akira Yano, Yoshiki Tabuchi, Toshiya and Matsumoto, Koh 2016. Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor. Japanese Journal of Applied Physics, Vol. 55, Issue. 5S, p. 05FE04.
Koizumi, A. Mitchell, B. Dierolf, V. and Fujiwara, Y. 2016. Rare Earth and Transition Metal Doping of Semiconductor Materials. p. 259.
Volume 449 (Symposium N – III-V Nitrides)
1996 , 129
III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel
Kazuo Uchida (a1), Hiroki Tokunaga (a1), Yoshiaki Inaishi (a1), Nakao Akutsu (a1), Koh Matsumoto (a1), Tsuyoshi Itoh (a2), Takashi Egawa (a2), Takashi Jimbo (a2) and Masayoshi Umeno (a2)...
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Deaprtment of Electrical & Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Aichi, 466, Japan
DOI: https://doi.org/10.1557/PROC-449-129
We introduce III-V nitrides growth including GaN as well as InGaN by a newly developed atmospheric-pressure metal-organic vapor phase epitaxy system with a three layered flow channel which is a promising system for a large scale production. First, we have shown through computer simulation that a laminar flow of gases is maintained at 1000 °C in the three layered flow channel. Second, as a part of epitaxial results, we have found that the surface roughness of a low temperature-grown buffer layer on sapphire substrates, which can be measured by atomic force microscope, should be minimum in order to grow high quality GaN. We also report the growth of a double heterostructure of Ino. 15Gao.85N/GaN which shows a strong near band-edge emission in room temperature photoluminescence.
COPYRIGHT: © Materials Research Society 1997
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