Known in the prior art are semiconductor devices which provide volatile storage of information in a dynamic random access memory (RAM) portion and non-volatile storage in a read only memory (ROM) portion. For example, U.S. patent application Ser. No. 654,332, (now U.S. Pat. No. 4,611,309) filed Sept. 24, 1984, on behalf of Patrick Chuang, Robert Yau and Ron Maltiel, entitled "An Improved Non-Volatile Dynamic RAM Cell", assigned to the assignee of the instant application discloses one such device.
Oftentimes it is necessary to non-destructively access both the volatile and non-volatile data for such purposes as comparison in image processing and pattern recognition. It is desirable that both of these accesses take place over a short period of time, ideally within one memory clock cycle, because of the large number of data points used in such applications as image processing and pattern recognition. If each such comparison requires several clock cycles, an undesirable time penalty would be imposed during pattern recognition.
However, the memory cells of the prior art are incapable of concurrently accessing both the volatile and non-volatile data without over-writing the volatile data. In addition, in these so-called shadow-memories, the non-volatile portion merely duplicated the data stored in the volatile portion. This duplication was necessary to provide back-up for data which would be lost from the volatile portion during a power failure. Therefore, only one-half of the shadow-memory is being used, the other one-half serving as back-up. On approach overcoming these difficulties is to temporarily store the data from, for example, the volatile portion of the memory during one memory access cycle and then access the data from the non-volatile portion of the memory during the following memory cycle for subsequent comparison. Such approach is described in a co-pending application Ser. No. 717,348, filed Mar. 29, 1985, on behalf of Ron Maltiel and Robert Yau, entitled "Method and Apparatus for Non-Destructive Access of Volatile and Non-Volatile Data in a Shadow Memory Array", and assigned to the assignee of the instant application.


Users who want to subscribe to services of a wireless wide area network (“WWAN”) typically have to complete a complicated series of steps. The device (e.g., personal computer, cell phone, or personal digital assistant) through which the services are to be accessed may have a wireless network interface card, such as a Global System Mobile (“GSM”) card. When such a device is purchased by a user, the user typically has not subscribed to services of a service provider, and thus the wireless network interface card is not provisioned to access any service provider. To subscribe to the services of a service provider, the user may have to research the services of various service providers by locating and accessing the web sites of the service providers. Once the user has decided upon a service provider and a service, the user needs to subscribe to the service and obtain a subscriber identity module (“SIM”) card that is provisioned with information provided by the service provider. A SIM card, which contains a subscriber identity that uniquely identifies the SIM card, is provisioned by storing in its memory information relating to registration information and activation service information for the selected service provider, which may be considered a “home” service provider. The registration information and activation service information may be stored on a network server, rather than in the memory of the SIM card. The activation information may include an access point name (“APN”) for a subscribed-to service of the selected service provider. The device uses the registration information to notify a service provider that it is currently on and within range of the service provider's wireless network. The registered device uses the service activation information to notify the service provider that it wants to start accessing a subscribed-to service (e.g., access the internet). The provisioning may also include storing of information for other service providers that may be “home,” “preferred,” or “non-preferred” service providers. The selected service providers may have agreements with the other service providers to provide some of the services, for example, in an area not serviced by the selected service provider. For example, if the services of a home service provider are not currently available to a device, the device may try to activate a service of a preferred or non-preferred service provider. The user can then install the SIM card onto the GSM card to access the services of the service provider. However, to obtain such a SIM card, the user may need to go to a retail outlet of the service provider and subscribe to the service. Alternatively, the user may obtain the SIM card via mail order. Regardless of how the SIM card is obtained, the user typically needs a SIM card that is provisioned by a service provider in accordance with the selected service.
Some vendors of devices may provide a purchase option by which a purchaser of a device can subscribe to a service of a wireless service provider at the time the device is purchased. The purchaser may select a service provider and service that is made available by the vendor. The vendor coordinates the subscribing of the purchaser to the service and the provisioning of the SIM card with service provider and service information. The vendor then installs the provisioned SIM card into the device before it is delivered to the purchaser.
The selection of a service provider and a service at the time of purchase of the device limits both the timing of the subscription and the choice of service providers and services. Some vendors may require a purchaser to subscribe to a service at the time of purchase and limit the purchaser's options to certain service providers and services. At the time of purchase, a purchaser may not be ready to subscribe to a service (but may want the option of doing so later) or may not want to subscribe with the service providers or services that the vendor makes available. If the purchaser does not subscribe at the time of purchase, then later subscription requires the complicated series of steps as described above. It would be desirable to have a less complicated way of subscribing to wireless services that would offer a range of service providers and services and not necessarily be limited to subscribing at the time of purchase of a device.


This section provides background information related to the present disclosure and is not necessarily prior art.
In an attempt to reduce the quantity of NOx and particulate matter emitted to the atmosphere during internal combustion engine operation, a number of exhaust aftertreatment devices have been developed. A need for exhaust aftertreatment systems particularly arises when diesel combustion processes are implemented. Typical aftertreatment systems for diesel engine exhaust may include a hydrocarbon (HC) injector, a diesel oxidation catalyst (DOC), a diesel particulate filter (DPF), and a selective catalytic reduction (SCR) system.
SCR technology has been used in conjunction with reducing nitrogen oxides present in the exhaust of combustion engines. Some of these systems are constructed using urea-based technology including a container for storing a reductant (e.g., urea) and a delivery system (including an injector, for example) for transmitting the reductant from the container to the exhaust stream. A mixer is typically provided for mixing the injected reductant with the exhaust gas before the reductant reaches a catalyst with which the reductant reacts. While these systems may have performed well in the past, it may be desirable to provide an improved mixer to more efficiently and effectively mix the reductant with the exhaust stream.


This invention relates to an evolutionary controlling system, and particularly to that for controlling characteristics of a subject in an evolutionary manner.
Heretofore, when a control system or control characteristics of a subject, such as vehicles and electrical appliances, is designed, imaginary users are selected, and the users' preferences and their using conditions are taken into consideration. The characteristics of the subject are determined in such a way as to adapt the subject to users in as broad a range as possible.
However, each individual user has a particular and unique personality, and thus, their preferences are diverse. Thus, there is a problem in that even if imaginary users are selected to develop and design a product for users by presuming the users' preference, it is impossible to satisfy all of the users of the product.
In order to solve the above problem, prior to purchase of a product, a prospective user is requested to determine whether or not the product is satisfactory to the user after checking the characteristics of the product in light of the user's preferences. However, it is troublesome for the user to check the characteristics of the product before purchase. Further, because a series of products are often operated or controlled by characteristics common in the products, although the design of the product is changed depending on the user's preferences, the user may not like other operational characteristics. Thus, although the design is appealing to some prospective users, the users may not purchase the product since the operational characteristics do not appeal to them. In other words, there is another problem in that the range of users is limited and depends on the operational characteristics.
An objective of the present invention is to provide an evolutionary control system to construct characteristics which can satisfy plural users.


For displaying graphic images on a cathode ray tube display monitor, personal computer systems generally include a video adapter circuit board housed within the computer system case. The video adapter circuit board typically includes a bus interface circuit, a dedicated processor, dual-port random access memory (VRAM), and a digital-to-analog converter. The video adapter circuit board is typically controlled by the central processing unit (CPU) of the computer system and receives digital data representative of an image to be displayed from the computer system memory or from an input device coupled to the computer system bus.
Typically, video adapter circuit boards generate red, green and blue (RGB) analog component video signals in addition to horizontal (HSYNC) and vertical (VSYNC) synchronizing signals. These signals are generally formatted according to a selected one of several commonly utilized computer scanning formats. These formats determine the resolution of the video image and include video graphics array (VGA), super video graphics array (SVGA), color graphics adapter (CGA), extended graphics adapter (EGA), and extended graphics array (XGA) formats. A cathode ray tube (CRT) adapted to the selected scanning format receives the analog RGB component video signals and synchronizing signals and provides a display of the image.
Due to concerted efforts of display manufacturers, flat panel display monitors are becoming increasingly available. Flat panel display monitors offer several advantages over CRT display monitors. For example, flat panel display monitors are typically lighter in weight, occupy less space, consume less power, emit less radiation and have less glare than do their CRT counterparts. Commercially available flat panel display monitors are commonly liquid crystal displays that utilize active-matrix addressing. These include thin film transistor (TFT) and supertwisted-nematic (STN) flat panel display monitors.
TFT and STN flat panel display monitors operate on markedly different principles than do CRT display monitors and, therefore, require distinctly different driving signals. TFT and STN flat panel display monitors utilize the optical properties of liquid crystal which are different when measured in a direction parallel to the axis of the crystals in comparison to when measured in a direction perpendicular to the axis of the crystals. Liquid crystal is sandwiched between two polarizing filters having polarizing directions oriented 90 degrees apart. The inside surface of the display adjacent to the liquid crystal is treated to cause the liquid crystals to align such that they appear transparent. When an electric field is applied to an area of the display, liquid crystals in that area are reoriented by the electric field such that they appear opaque. By adding a backlight and color filters, a color image can be displayed. In active matrix displays, a transistor is dedicated to control the electric field for each pixel. TFT displays are characterized in that under an applied electric field, the crystals are reoriented by twisting up to 90 degrees. In an STN display, the crystals are reoriented by twisting up to 270 degrees under the applied electric field. STN displays generally have higher contrast and greater viewing angles that TFT displays.
Because a CRT accepts RGB signals, whereas a flat panel display accepts signals utilizing a digital protocol, these devices cannot merely be interchanged in a computer system. Rather, the computer must typically be disassembled and appropriate video card drivers are exchanged. It is anticipated, however, that a user of an existing personal computer system will wish to utilize a flat panel display monitor with the personal computer system that is configured for a CRT. It is further anticipated that such a user will be discouraged from so doing if hardware and/or software modifications to the personal computer are required or if considerable technical knowledge is required on the part of the user.
Therefore, what is needed is a circuit for adapting a personal computer system for driving a flat panel display monitor without requiring modification of the personal computer system hardware or software. Further, what is needed is a circuit that can determine the scanning format of analog RGB signals generated by a personal computer and, based upon the determination, convert the analog RGB signals into signals appropriate to driving a flat panel display monitor. What is also needed is an ability to adjust display parameters for the flat panel display monitor, such as brightness and contrast, without requiring modification of the personal computer system.


1. Field of the Invention
The present invention relates to a folding cup holder attached to an interior of a passenger compartment in an automobile, and more particularly to a folding cup holder having a structure which does not easily break even when accidental external force is applied, and is easy to be restored.
2. Description of the Related Art
Various kinds of equipment such as a cup holder are mounted to the interior of the passenger compartment in an automobile for the convenience of the passenger. There are cup holders which are built into the interior, however, there is proposed cup holders of an add-on type. The add-on type cup holder is proposed as a folding structure, which does not obstruct the passenger when it is not in use.
In the folding cup holder, it is necessary to make an arm for holding a cup and a structure for supporting the arm narrow and small, for the purpose of achieving both of the matters of the cup holder being compactly foldable and the cup holder being expandable largely. Accordingly, it is necessary to employ a countermeasure to prevent the cup holder from being broken in the case where accidental external force is applied. Japanese Patent Application Laid-open No. 2000-8687 shows an art of the folding cup holder. This cup holder is fixed to a wall surface or the like of the interior, can be folded compactly when not being used, and can be expanded forward when being used. The structure is such that a structure for supporting a bottom plate is cancelled so as to prevent the structure from being broken when accidental external force is applied.
According to the proposed folding cup holder mentioned above, when the structure for supporting the bottom plate is cancelled due to the accidental external force, the bottom plate drops down. In order to restore this, it is necessary to reassemble the bottom plate in the supporting structure again according to a troublesome operation. It is hard to smoothly execute this operation without considerable practice, and in particular, it is even harder to execute while driving the vehicle.
The present invention is made in view of the above problem, and an object of the present invention is to provide a folding cup holder having a structure which does not easily break even when accidental external force is applied and can be easily restored.
According to the present invention, a folding cup holder is provided with a base plate including one or more through holes; a holder arm for holding a cup, the holder arm being pivotally supported to the base plate; and a tray including one or more latch arms respectively inserted to the through holes, and axially supported to the base plate. The latch arms and the through holes engage with each other to hold the tray in a position for holding a cup and an engagement thereof is easily cancelled in a case that excessive force is applied to the tray.
According to the structure mentioned above, when excessive force is applied to the base plate, the latch arms easily displace from the through holes and the base plate becomes free to swing, so that it is possible to prevent the base plate and a bearing thereof from being broken. Further, at a time of making the structure in an initial state, the latch arms easily engage with the through holes simply moving the base plate upward by hand and inserting the latch arms to the through holes. Accordingly, it is possible to easily restore to the initial state without a complex operation.
Preferably, each of the through holes is provided with a leaf spring for catching the latch arm and the leaf spring is fitted to an edge thereof. The engagement and the cancellation of the latch arms mentioned above can be more smoothly executed by engaging the latch arms with the leaf springs in place of the through holes. Accordingly, as well as a risk of breakage being reduced, the restoring operation can be more easily executed.
More preferably, a distal end of each of the latch arms is formed in a fork shape. Since the fork shape increases flexibility of the distal end of the latch arm, the risk of breakage is reduced, and the restoring operation can be more easily executed.
Further preferably, through holes and the latch arms are constituted in a pair respectively and proximal ends of the latch arms are integrally connected by a rib which has a U-shaped end portion. The latch arms are reinforced with the rib so that the latch arms are hard to be broken.


1. Field of the Invention
The present invention relates to improvements of a surface-light-emitting device including a light-generating layer and a light resonator constituted by two multi-film reflecting layers between which the light-emitting layer is interposed.
2. Discussion of Related Art
There is known a surface-light-emitting device including a semiconductor substrate and a plurality of semiconductor layers which are grown on the semiconductor substrate. The semiconductor layers comprise a light-generating layer (active portion), and a light resonator constituted by two multi-film reflecting layers (DBR: distributed-Bragg reflectors) which are located on the opposite sides of the light-generating layer, to reflect a light generated by the light-generating layer. The semiconductor layers further comprise an outermost semiconductor layer which is located on one of the opposite sides of a laminar semiconductor structure consisting of the above-indicated semiconductor layers, which one side is remote from the substrate. The outermost semiconductor layer has a light-emitting surface from which the light generated by the light-generating layer and resonated by the light resonator is emitted. Examples of such a surface-light-emitting device include a resonant-cavity light-emitting diode and a surface-light-emitting laser.
JP-A-2000-299492 discloses a light-emitting diode of quantum-well type, as an example of the surface-light-emitting device. This light-emitting diode includes a plurality of semiconductor layers laminated on a substrate. The semiconductor layers comprise a light-generating layer of a quantum-well structure having a thickness not larger than the wavelength (100 xc3x85, i.e., 10 nm) of the electron wave, and a light resonator consisting of two reflecting layers which are located on the respective opposite sides of the light-generating layer and which reflect a light generated by the light-generating layer. By applying an electric current between a pair of electrodes formed on the respective opposite surfaces of a laminar semiconductor structure consisting of the semiconductor layers, the light generated by the light-generating layer is emitted from one of the opposite surfaces of the laminar semiconductor structure which is remote from the substrate. In the light-emitting diode disclosed in the above-identified publication, an electron wave within the light-generating layer and an optical wave within the light resonator are coupled together, so that the light-generating layer generates a light only in a resonance mode. This phenomenon so-called xe2x80x9ca cavity QED effectxe2x80x9d permits the emitted light to have a high degree of directivity and a narrow line width, and prevents total reflection of the light by the crystal surface, assuring an advantage of a high degree of external quantum efficiency.
A known surface-light-emitting device as described above includes, for instance, an n-GaAs semiconductor substrate, and a first multi-film reflecting layer, a light-generating layer and a second multi-film reflecting layer which are successively grown on the substrate. The first multi-film reflecting layer consists of a multiplicity of n-(Al)GaAs/Al(Ga)As films superposed on each other such that the (Al)GaAs films and the Al(Ga)As films are alternately arranged. The ratios of the elements indicated in the parentheses are suitably selected, and may be zero. The second multi-film reflecting layer consists of a multiplicity of p-(Al)GaAs/Al(Ga)As films superposed on each other such that the (Al)GaAs films and the Al(Ga)As films are alternately arranged. The parentheses have the same meaning as described just above. Where the wavelength of the light to be emitted from the surface-light-emitting device is as short as about six hundred and some tens of nanometers (nm), the concentrations of Al of the (Al)GaAs films must be made relatively high in order to reduce the light absorptance. However, an increase in the Al concentration undesirably reduces or substantially zeros the refractive index at the boundaries of the alternately arranged films, leading to difficulty in obtaining a sufficiently high degree of reflectivity of the multi-film reflecting layers. Another problem encountered in the known surface-light-emitting device relates to a change of a gas used to form the first multi-film reflecting layer (formed on the side of the substrate) and the light-generating layer (active portion of the device). Described in detail, epitaxial growth of the AlGaInP/GaInP light-generating layer on the first multi-film reflecting layer is initiated by changing the gas from arsine AsH3 which has been used for growing the As-based material of the first multi-film reflecting layer, to phosphine PH3 to be used for the epitaxial growth of the light-generating layer on the first reflecting layer. However, this arsine-to-phosphine change of the gas takes a relatively long time, causing an increased surface roughness of the first reflecting layer, and oxidization of Al, making it difficult to form a high-quality active portion on the first reflecting layer, that is, the light-generating layer having a high quality on the first reflecting layer.
On the other hand, it has been proposed to form the first and second (n- and p-) multi-film reflecting layers consisting of (Al)GaInP/Al(Ga)InP films. The reflecting layers according to this proposal exhibit a high degree of reflectivity even where the light to be emitted has a considerably short wavelength. In addition, the epitaxial growth of the AlGaInP/GaInP light-generating layer on the first reflecting layer does not require a change from arsine AsH3 to phosphine PH3, before the epitaxial growth of the light-generating layer on the first reflecting layer. Accordingly, the light-generating layer serving as the active portion of the surface-light-emitting device can be advantageously given a high degree of crystallinity. However, the use of the p-(Al)GaInP/Al(Ga)InP second multi-film reflecting layer gives rise to a relatively large degree of carrier blockage, and an accordingly high electric resistance, and results in reduced enclosure of electrons, so that the operating efficiency of the surface-light-emitting device is deteriorated where the device is designed to emit a light having a relatively short wavelength. Another problem arises from the use of the (Al)GaInP/Al(Ga)InP films for the first and second (n- and p-) multi-film reflecting layers, where a mesa structure is formed by selective etching effected on the laminar semiconductor structure grown on the semiconductor substrate. That is, it is extremely difficult to practice a wet-etching process to form the mesa structure. Although the application of the wet-etching process is not impossible, the yield ratio in the production of the surface-light-emitting device is considerably low where the wet-etching process is used to form the mesa structure. In addition, the difficulty to form the mesa structure by the wet-etching process leads to difficulty to form a current-blocking region by subjecting the peripheral portion of the mesa structure to an oxidizing treatment.
The present invention was made in view of the prior art described above. It is therefore a principal object of the present invention to provide a surface-light-emitting device which includes multi-film reflecting layers having a high degree of reflectivity with respect to a relatively short wavelength of light, and a light-generating layer having a high degree of crystallinity, and which has a low electric resistance and exhibits a high operating efficiency. It is an optional object of this invention to provide a surface-light-emitting device including a laminar semiconductor structure which is formed on a semiconductor substrate and which has a mesa structure formed by wet-etching and having a current-blocking region formed by an oxidizing treatment.
The principal object indicated above may be achieved according to the principle of the present invention, which provides a surface-light-emitting device including a semiconductor substrate, and a laminar semiconductor structure consisting of a plurality of semiconductor layers formed by epitaxial growth on the semiconductor substrate, the laminar semiconductor structure including a light-generating layer, and two multi-film reflecting layers between which the light-generating layer is interposed and which cooperate to constitute a light resonator for reflecting a light generated by the light-generating layer, the laminar semiconductor structure having a light-emitting surface at one of opposite ends thereof remote from the semiconductor substrate, the light generated by the light-generating layer being emitted from the light-emitting surface, characterized in that the two multi-film reflecting layers consist of a first multi-film reflecting layer formed principally of AlGaInP on the semiconductor substrate, and a second multi-film reflecting layer formed principally of AlGaAs on one of opposite sides of the light-generating layer which is remote from the semiconductor substrate.
In the present surface-light-emitting device, the first multi-film reflecting layer formed on the semiconductor substrate, which is required to have a comparatively high degree of reflectivity, is formed principally or essentially of AlGaInP, while the second multi-film reflecting layer located on the side of the light-emitting surface is formed principally or essentially of AlGaAs. The first multi-film reflecting layer formed principally of AlGaInP has a large difference between refractive index values of adjacent ones of the alternately arranged films, and a low degree of light absorptance, so that the first multi-film reflecting layer exhibits a high reflectivity, even where the light to be emitted has a relatively short wavelength. In addition, the formation of the light-generating layer (formed principally of AlGaInP/GaInP, for example) by epitaxial growth on the first multi-film reflecting layer does not require a change of a gas to form the light-generating layer after the first reflecting layer, so that the light-generating layer is given a high degree of crystallinity. Further, the first multi-film reflecting layer formed principally of AlGaInP has a lower electric resistance than a reflecting layer formed principally of AlGaAs, and the light-generating layer is interposed between the first reflecting layer formed principally of AlGaInP and the second reflecting layer formed principally of AlGaAs on the side of the light-emitting layer, so that a carrier-enclosing region for enclosing the carrier can be suitably formed upstream of the barriers as seen in the direction of movement of the carrier, assuring a high degree of operating efficiency of the device.
According to one preferred form of this invention, the semiconductor substrate is formed of n-GaAs, and the first multi-film reflecting layer consists of n-(Al)GaInP films and n-Al(Ga)InP films which are alternately laminated on each other, while the second multi-film reflecting layer consists of p-(Al)GaAs films and p-Al(Ga)As films which are alternately laminated on each other. In this case, the light-generating layer is formed of AlGaInP/GaInP. In the device according to this preferred form of the present invention, the first multi-film reflecting layer consisting of the alternately arranged n-(Al)GaInP films and n-Al(Ga)InP films has a high refractive index and a low degree of light absorptance, and exhibits a high degree of reflectivity even where the light to be emitted has a comparatively short wavelength, and the formation of the light-generating layer of AlGaInP/GaInP by epitaxial growth on the first multi-film reflecting layer of n-(Al)GaInP/Al(Ga)InP does not require a change of the gas to form the light-generating layer on the first reflecting layer, so that the light-generating layer is given a high degree of crystallinity. Further, the first multi-film reflecting layer consisting of the alternately arranged n-(Al)GaInP films and n-Al(Ga)InP films has a lower carrier blockage and a lower electric resistance than a reflecting layer consisting of alternately arranged n-(Al)GaAs films and n-Al(Ga)As films, and the light-generating layer is interposed between the first reflecting layer consisting of the alternately arranged n-(Al)GaInP films and n-Al(Ga)InP films and the second reflecting layer consisting of the alternately arranged p-(Al)GaAs films and p-Al(Ga)As films, so that carrier-enclosing regions Ke and Kh for enclosing the carrier can be suitably formed upstream of the barriers as seen in the direction of movement of the carrier (electrons and holes), assuring a high degree of light-emitting efficiency of the device. Where the laminar semiconductor structure grown on the semiconductor substrate includes a mesa structure formed by etching an end portion of the structure, as described below in detail, an ordinary etching process may be used for easy formation of the mesa structure, since the second multi-film reflecting layer formed of p-(Al)GaAs/Al(Ga)As does not include phosphorus (P). Further, a non-electrically-conductive current-blocking region can be easily formed by oxidizing aluminum (Al) in an exposed portion of the mesa structure which includes the second reflecting layer formed of p-(Al)GaAs/Al(Ga)As.
According to another preferred form of this invention, the laminar semiconductor structure includes a mesa structure which has the light-emitting surface and the second multi-film reflecting layer, the mesa structure being formed by etching an end portion of the laminar semiconductor structure, which end portion is laminated on the light-generating layer, the mesa structure having a smaller cross sectional area taken in a plane parallel to the light-emitting surface, than the other portion of the laminar structure, the second multi-film reflecting layer comprising a generally annular non-electrically-conductive current-blocking region which is formed by oxidizing an exposed portion of the mesa structure which is a peripheral part as seen in the above-indicated plane. In this arrangement, the generally annular non-electrically-conductive current-blocking region can be easily formed by oxidizing the peripheral portion of the mesa structure, since the peripheral portion of the mesa structure is exposed in the radial direction of the mesa structure.
According to a further preferred form of this invention, the light-generating layer includes at least one active layer of quantum-well structure each interposed between adjacent two barrier layers, each active layer and the adjacent two barrier layers being located between the first and second multi-film reflecting layers such that each active layer is aligned with an antinode of the light resonated by the light resonator. In the present arrangement, an electron wave within the light-generating layer and an optical wave within the light resonator are coupled together, so as to provide a so-called xe2x80x9ccavity QED effectxe2x80x9d permitting the light-generating layer to generate a light only in a resonance mode. Accordingly, the light emitted from the light-emitting surface has a high degree of directivity and a narrow line width, without total reflection of the light by the monocrystalline semiconductor surface, assuring a high degree of quantum efficiency and a large optical output.


The present invention relates generally to a storage system for managing storage apparatuses and, more particularly, to a method and a system for deploying a virtual hard disk file to a virtual volume known as thin provisioning.
The use of virtual hard disk (VHD) has been widespread in accordance with the growth of server virtualization technology. In addition, the virtual appliance which packs virtual server specification and the VHD into one package has also grown in usage. The VHD can be recognized as a logical volume by the virtual machine even though the VHD is recognized as just a file by the physical server because the hypervisor converts the VHD file dynamically and presents it as a volume to the virtual machine. The VHD has a thin provisioning functionality that grows its actual capacity on demand. On the other hand, the thin provisioning functionality has also been implemented in a storage apparatus such as the Hitachi Dynamic Provisioning of Hitachi USP/V. In that case, the virtual volume is presented as a logical unit that can be accessed through a fiber channel mainly from the physical server.
Migration between the virtual server and physical server is increasingly popular based on the requirement for performance and availability of the application system. However, the physical server cannot access the VHD as a logical drive. Conversion of the VHD to a logical device is necessary for the use of the VHD by the physical server. In that case, if the VHD is converted to a fixed-size logical device, it creates a problem that the capacity efficiency decreases. Furthermore, in the case where the VHD is converted to a virtual device (logical device with thin provisioning), if there is a gap between the page size of the virtual device and the block size of the VHD, the capacity efficiency is not fully realized.


1. Field of the Invention
The present invention relates to a liquid crystal display (LCD), and more particularly, to an LCD and its fabrication method with enhanced reliability.
2. Discussion of the Related Art
Generally, an LCD has a lower substrate having a thin film transistor (TFT) and a pixel electrode, an upper substrate having a color filter for displaying color and a common electrode, and a liquid crystal filled between the lower and upper substrates. Here, glass or crystalline is generally used as the material for the substrates.
A crystal substrate facilitates the use of a high temperature process, but is rarely used to fabricate a large-sized display. Also, a crystal substrate is too expensive.
A glass substrate, however, is relatively inexpensive, but cannot be used in a high temperature process, and has a reduced reliability from stress. That is, the stress on the glass substrate is different when depositing a chrome layer on the glass substrate as opposed to depositing an amorphous silicon layer on the glass substrate.
FIGS. 1A and 1B illustrate a stress characteristics when chrome is generally deposited on a glass substrate. FIGS. 2A and 2B illustrate stress characteristics when amorphous silicon is generally deposited on the glass substrate.
Referring to FIG. 1A, when a chrome layer 2 is deposited on the glass substrate 1, the substrate takes on a tensile stress. Thus, the glass substrate 1 is bent upward, as shown in FIG. 1B.
Referring to FIG. 2A, when an amorphous silicon layer 3 is deposited on the glass substrate 1, the glass substrate 1 is bent downward, as shown in FIG. 2B.
Accordingly, when a data line is formed of chrome in the LCD, the glass substrate is bent by the tensile stress as shown in FIG. 1B, but tends to return to its original state. Hence, a weak portion in the data line may become open.
The conventional LCD is described below with reference to the attached drawings.
Generally, an upper substrate of the LCD includes an active display area where a TFT and pixel electrode are arranged, a gate line pad for applying a driving signal to a TFT gate electrode of the active display area, and a data line pad for applying a data signal to a TFT source electrode. The TFT and pixel electrode of the active display area is illustrated in FIG. 3. In particular, the TFT is formed at the intersection of the gate line and data line, where the gate line is connected to a gate electrode, the data line is connected to a source electrode, and the drain electrode is formed to be connected to an ITO pixel electrode.
Here, for the active area of the TFT, the amorphous silicon layer is deposited between the gate electrode and source/drain electrode, and the active area is formed under the data line and is wider than the data line.
A method for forming the conventional LCD is described below with reference to FIGS. 4A-4E, which are cross-sectional views taken along the line I--I' in FIG. 3.
As illustrated in FIG. 4A, a metal such as aluminum (Al) is deposited on a glass substrate 1, and then selectively etched to form a gate line including a gate electrode 4. As illustrated in FIG. 4B, a gate insulating layer 6 (such as a silicon nitride layer), an amorphous silicon layer 7, and a high concentration n-type amorphous silicon layer 8 are sequentially deposited on the overall surface of the glass substrate 1 including the gate line. As illustrated in FIG. 4C, the amorphous silicon layer 7 and high concentration n-type amorphous silicon layer 8 are selectively removed except on the active area and the data line region of TFT.
As illustrated in FIG. 4D, a chrome layer 9 is deposited on the overall surface of the substrate, and then selectively removed except on the high concentration n-type amorphous silicon layer 8 of the data line region and on both sides of the amorphous silicon layer 7 and high concentration n-type amorphous silicon layer 8 of the active area to form the data line and source/drain electrode of the TFT. The exposed center portion of the high concentration n-type amorphous silicon layer 8 is removed using the chrome layer of the source/drain electrode as a mask. Here, the data line and source electrode are integrally formed (not shown).
As illustrated in FIG. 4E, a passivation layer 10 is formed on the overall surface of the substrate having the chrome layer 9. Then, the passivation layer on the chrome layer 9 of the drain electrode is selectively removed to form a contact hole. A transparent conductive layer is deposited on the overall surface and then selectively etched to remain only on the pixel area to form a transparent electrode 11. The transparent electrode 11 of the pixel area is electrically connected to the chrome layer 9 of the drain electrode through the contact hole.
However, the conventional LCD has problems as follows.
As the chrome layer is deposited in a state where the amorphous silicon layer and high concentration n-type amorphous silicon layer are formed on the active area and data line area, (with the remaining portion removed) the glass substrate takes on a tensile stress and becomes bent. Moreover, because the glass substrate also has a tendency to return to its original (unbent) state, the data line becomes open. Therefore, the reliability of the LCD is decreased.


The present invention relates to an endoscope reprocessor for the automated reprocessing of an endoscope. In particular, the present invention relates to an endoscope reprocessor having a rack for holding an endoscope. The invention also relates to an endoscope reprocessor which minimizes the degradation and consumption of disinfectant and is able to shorten the reprocessing time.
In the present specification, “reprocessing” an endoscope refers to performing a cleaning and disinfecting process on an endoscope, which process includes specifically a step for cleaning an endoscope with a liquid detergent (cleaning step), a step for disinfecting with a liquid disinfectant the endoscope that has been cleaned with detergent (disinfecting step), and a step for rinsing the endoscope that has been disinfected with disinfectant (rinsing step). The term “cleaning” refers to the cleansing or washing of an endoscope with a liquid detergent that is carried out in the cleaning step.
As is commonly known, the endoscope is an instrument used to insert a tube into the human body or another living body and carry out diagnosis, sample collection and treatment within the body, particularly on internal organs.
The endoscope is basically composed of an insertion tube which is inserted into the body, a control unit for controlling the insertion tube and for controlling air and water supply, etc. in the endoscope, a connector which connects to an air supply and suction pump (light guide (LG) connector), and a universal cord (LG soft portion) which connects the connector with the control unit and the insertion tube.
Endoscopes are generally not disposable, single-use devices; rather, they are used repeatedly and on more than one patient. For an endoscope to be repeatedly used in this way, it must be meticulously reprocessed after each use in order to prevent endoscopically transmitted bacterial infections. To this end, various types of endoscope reprocessors for the automated reprocessing of endoscopes have been developed for commercial use.
Such apparatuses for reprocessing endoscopes include, for example, the endoscope reprocessor described in JP 2003-135396 A.
JP 2003-135396 A describes an apparatus for reprocessing an endoscope inside a basin, which apparatus is characterized by having a tray which is insertably disposed at the interior of the basin and on which the endoscope is set. The reprocessor of JP 2003-135396 A is used to reprocess an endoscope by setting the endoscope on the tray outside of the basin, inserting the tray into the basin, and circulating liquid detergent and liquid disinfectant inside the basin.
Another example of a known endoscope reprocessor is the apparatus disclosed in JP 2006-68095 A wherein, after the insertion tube and the universal cord of the endoscope have been coiled and the endoscope has been placed in a basin, the endoscope is reprocessed by circulating liquid detergent and liquid disinfectant over a pathway that includes the basin (or by immersion only in the case of the disinfectant).
Such an endoscope reprocessor generally reprocesses an endoscope by carrying out a cleaning step in which the endoscope is cleaned with a liquid detergent and may also be rinsed with water, a disinfecting step in which the endoscope is disinfected with a liquid disinfectant, and a rinsing step in which the endoscope is rinsed with water such as tap water to remove disinfectant and the like.
JP 10-305011 A discloses an endoscope reprocessor which reprocesses only the insertion tube of the endoscope. The insertion tube is placed in a tubular main body of the reprocessor, following which a cleaning step that involves rinsing with water and the use of a liquid detergent and a disinfecting step that involves the use of a liquid disinfectant are carried out, after which drying is carried out by the passage of pressurized air.
In the respective steps carried out in an endoscope reprocessor, i.e., the cleaning step, disinfecting step and rinsing step, reprocessing is carried out by circulating the reprocessing liquids not only over the exterior of the endoscope, but also inside the channels at the interior of the endoscope, such as the forceps channel and the air/water channel.
Owing to the difficulty of discharging liquids from these channels inside the endoscope, after reprocessing is finished, the reprocessing liquids are forced out by introducing air into the channels. Once reprocessing is completed, reprocessing liquids remaining inside the basin which houses the endoscope are drained from the basin gravitationally or with a drain pump.


1. Field of the Invention
The present invention relates to a lace buckle device with innovatory convenience for firmly fastening or releasing two ends of a lace, and more particularly to a lace buckle device which can effectively prevent two ends of a lace from being pulled out by force.
2. Description of the Related Art
A rope or a lace is commonly used in our daily life. A rope can be used to tie up the mouth of a bag. A lace is applied to tie the mouth of a belted topcoat or a lace shoe for a wearer to wear comfortably. Generally, two ends of a rope or a lace would be tied to form a slipknot so as to secure the rope or lace in position. When one end of the rope or lace being pulled, the slipknot will easily be untied. However, there are many drawbacks by means of tying a slipknot for securing a rope or lace in position. For example, it wastes time and is troublesome to tie a slipknot, and a slipknot is easy to be loosened or to become a fast knot and is not beautiful.
A conventional lace buckle device has been invented to overcome the drawbacks of tying a slipknot to fasten two ends of a rope or a lace. Referring to FIG. 8, the conventional lace buckle device includes a buckle base 80 and an operative rod 90. An opening 81 is formed on the top of the buckle base 80. A central hollow 82 is provided in the interior of the buckle base 80, but the central hollow 82 does not penetrate through the bottom of the buckle base 80. Two opposite passing holes 83 are provided in the side wall of the buckle base 80. A top tray 91 is provided on the top of the operative rod 90, and a protruding rod 92 is provided on the bottom of the top tray 91. A passing hole 921 is provided to penetrate through the front and rear side walls of the protruding rod 92, and below each end of the passing hole 921 is provided with a stopping strip 922. A protruding block 923 is provided on the bottom of the protruding rod 92.
Referring to FIG. 9, while being assembled, a spring 93 is placed into the central hollow 82 of the buckle base 80, and then the operative rod 90 is inserted in the central hollow 82 with the direction of the passing hole 921 being in accordance with that of each passing hole 83. At the same time, each stopping strip 922 is forced to pass the opening 81 and stop against each passing hole 83 so as to make the protruding rod 92 be caught in the central hollow 82. Because of the elasticity of the spring 93, the passing holes 83 and the passing hole 921 are slightly staggered, and the passing holes 83 do not respectively wholly lap over each end of the passing hole 921. After the top tray 91 of the operative rod 90 being pressed down, the operative rod 90 will move downward to make the passing hole 921 accord with the passing holes 83, and then two ends of a rope or a lace 94 can penetrate through the overlapped passing holes 83 and 921. When the top tray 91 being released, referring to FIG. 10, two ends of a rope or a lace 94 will be fastened to prevent from being pulled out by means of the stagger of the passing holes 83 and 921.
However, there are still drawbacks in the above-mentioned conventional lace buckle device although it is more convenient to be operated and beautiful to look than a slipknot tied by hands. The conventional lace buckle device can function to fasten or release two ends of a lace by means of the spring 93 and the operative rod 90 which cooperate to change the positions of the passing hole 921, but, when two ends of the lace being clamped by the spring 93 and the operative rod 90, they can still be easily pulled out of the buckle device by forceful pulling. It can not have the perfect efficiency to fasten two ends of a lace.
Therefore, the present invention is to provide a lace buckle device that substantially obviates the drawbacks of the related conventional art.
An object of the present invention is to provide a lace buckle device that is convenient for operating to fasten or release two ends of a lace.
Another object of the present invention is to provide a lace buckle device whose catching rims of both slant holes improve perfect efficiency to prevent two ends of a lace from being pulled out by forceful pulling while in clamped condition.
To achieve these advantages, a lace buckle device in the present invention includes a buckle base, an operative rod and a spring. The buckle base is provided with a central vertical hollow, and a lateral hole is provided to penetrate through the centers of the front and rear walls of the buckle base. Two slant holes are respectively provided at the left and right sides of the lateral hole and respectively slantwise extend to and through the left and right side walls of the buckle base. A catching rim is formed on each shorter section of each slant hole in the left side wall or right side wall. The operative rod is provided with a lateral passing hole penetrating through the front and rear walls. After the spring and the operative rod being successively inserted in the central vertical hollow, each end of a lace can be inserted into each end of the slant hole in the left side wall or right side wall and out of each other end of the slant hole in the front wall, and then both ends of a lace are reversely inserted into the front end of the lateral hole and penetrate through the lateral passing hole of the operative rod and out of the rear end of the lateral hole of the buckle base so as to make two ends of a lace be firmly fastened by the clamp of the spring and the operative rod and the catch of the catching rims.


Traditional women's undergarments, namely brassieres, generally have a front portion with supportive cups, wings extending from the front portion surrounding the wearer's ribcage, a hook and eye closure to connect the two wings, and two shoulder straps. While traditional bras are practical for everyday use under daily wear, such as t-shirt, blouses, sweaters, etc., these traditional bras are not suitable for all purposes, e.g., for wear with backless garments such as formal gowns.
One solution has been a strapless and backless bra as disclosed in U.S. Pat. No. 6,397,391. While there are no wings of the bra to be exposed under a backless garment, this configuration provides little support to the breasts, resulting in an undesirable appearance. There have been other attempts to solve this problem but with little success.


Aluminum metal has been produced for 90 years in the Hall cell by electrolysis of alumina in a molten cryolite salt electrolyte bath operating at temperatures in the range of 900.degree.-1000.degree. C. The reactivity of the molten cryolite, the need for excellent electrical conductivity, and cost considerations have limited the choice of materials for the electrodes and cell walls to the various allotropic forms of carbon.
Typically the Hall cell is a shallow vessel, with the floor forming the cathode, the side walls a rammed coke-pitch mixture, and the anode a block suspended in the bath at an anode-cathode separation of a few centimeters. The anode is typically formed from a pitch-calcined petroleum coke blend, prebaked to form a monolithic block of amorphous carbon. The cathode is typically formed from a pre-baked pitch-calcined anthracite or coke blend, with cast-in-place iron over steel bar electrical conductors in grooves in the bottom side of the cathode.
During operation of the Hall cell, only about 25% of the electricity consumed is used for the actual reduction of alumina to aluminum, with approximately 40% of the current consumed by the voltage drop caused by the resistance of the bath. The anode-cathode spacing is usually about 4-5 cm., and attempts to lower this distance result in an electrical discharge from the cathode to the anode through aluminum droplets.
The molten aluminum is present as a pad in the cell, but is not a quiescent pool due to the factors of preferential wetting of the carbon cathode surface by the cryolite melt in relation to the molten aluminum, causing the aluminum to form droplets, and the erratic movements of the molten aluminum from the strong electromagnetic forces generated by the high current density.
The wetting of a solid surface in contact with two immiscible liquids is a function of the surface free energy of the three surfaces, in which the carbon cathode is a low energy surface and consequently is not readily wet by the liquid aluminum. The angle of a droplet of aluminum at the cryolite-aluminum-carbon junction is governed by the relationship ##EQU1## where .alpha..sub.12, .alpha..sub.13, and .alpha..sub.23 are the surface free energies at the aluminum carbon, cryolite-carbon, and cryolite-aluminum boundaries, respectively.
If the cathode were a high energy surface, such as would occur if it were a ceramic instead of carbon, it would have a higher contact angle and better wettability with the liquid aluminum. This in turn would tend to smooth out the surface of the liquid aluminum pool and lessen the possibility of interelectrode discharge allowing the anode-cathode distance to be lowered and the thermodynamic efficiency of the cell improved, by decreasing the voltage drop through the bath.
Typically, amorphous carbon is a low energy surface, but also is quite durable, lasting for several years duration as a cathode, and relatively inexpensive. However, a cathode or a TiB.sub.2 stud as a component of the cathode which has better wettability and would permit closer anode-cathode spacing could improve the thermodynamic efficiency and be very cost-effective.
Several workers in the field have developed refractory high free energy material cathodes. U.S. Pat. No. 2,915,442, Lewis, Dec. 1, 1959, claims a process for production of aluminum using a cathode consisting of the borides, carbides, and nitrides of Ti, Zr, V, Ta, Nb, and Hf. U.S. Pat. No. 3,028,324, Ransley, Apr. 3, 1962, claims a method of producing aluminum using a mixture of TiC and TiB.sub.2 as the cathode. U.S. Pat. No. 3,151,054, Lewis, Sept. 29, 1964, claims a Hall cell cathode conducting element consisting of one of the carbides and borides of Ti, Zr, Ta and Nb. U.S. Pat. No. 3,156,639, Kibby, Nov. 10, 1964, claims a cathode for a Hall cell with a cap of refractory hard metal and discloses TiB.sub.2 as the material of construction. U.S. Pat. No. 3,314,876, Ransley, Apr. 18, 1967, discloses the use of TiB.sub.2 for use in Hall cell electrodes. The raw materials must be of high purity particularly in regard to oxygen content, Col. 1, line 73-Col. 2, line 29; Col. 4, lines 39-50, Col. 8, lines 1-24. U.S. Pat. No. 3,400,061, Lewis, Sept. 3, 1968 discloses a cathode comprising a refractory hard metal and carbon, which may be formed in a one-step reaction during calcination. U.S. Pat. No. 4,071,420, Foster, Jan. 31, 1978, discloses a cell for the electrolysis of a metal component in a molten electrolyte using a cathode with refractory hard metal TiB.sub.2 tubular elements protruding into the electrolyte. The protruding elements enhance electrical conductivity and form a partial barrier to the mechanical agitation caused by magnetic effects.


In the course of processing substrates, for example semiconductor wafers or other kinds of substrates, photolithography is often performed to provide a mask for processing steps like etching or other operations which are to be applied only to part of the substrates. Typically, for photolithography a photoresist is applied to the substrate, the photoresist is exposed through a mask such that only defined regions of the photoresist are exposed to light, and the photoresist is subsequently developed. In case of positive photoresists, the regions exposed to light may be removed during the development, while for negative photoresists the regions not exposed to light are removed during the development of the photoresist.
In typical processing environments, substrates are transferred between the various processing steps like applying photoresist, exposing the substrate to light and developing the photoresist, by means of a mechanical gripper arm or other similar device which grips the substrate at a periphery thereof. However, this may lead to problems in some cases when the gripping device grips the periphery of the substrate where photoresist is applied, as the photoresist may for example adhere to the gripping device.
In some conventional solutions, the photoresist may be removed at the peripheral portion of the substrate prior to transferring the substrate using the gripping device. However, at least for some kinds of processing it may be desirable that the peripheral portion of the substrate remains coated with photoresist.


A common problem found in many trucks today is that their wheels and axles are incorrectly positioned. This incorrect position is too small for the human eye to see and the effects become noticeable only when the problem has become severe. The incorrect position is called wheel misalignment. Wheel misalignment leads to increased tire wear and fuel consumption and decreased control of the vehicle. Wheel misalignment can be due to components of a new truck setting in, bumps, potholes, suspension fatigue, or loading of the vehicle. It is therefore necessary to perform regular checks on the health of the vehicle.
If the truck owner decides to correct the problem of wheel misalignment, he has to take the vehicle to a service centre. The correction is done while the vehicle is at a standstill and without the extra weight of a cargo. The position of the wheel is then measured using alignment equipment. The position of the wheel is then altered by a technician till the values are within the recommended settings. Companies that perform wheel alignment commonly have a yearly check-up of their fleet. Midway the year, the truck wheels might already be misaligned, while the symptoms are too small to be noticed. This means that the truck might need to wait up to a year to be corrected.
This brings the need for onboard measurement equipment or dynamic alignment, to enable fleet operators to implement more effective maintenance programmes. The misalignment will be detected in an early phase, before causing too much damage to the tire. Dynamic alignment takes into consideration the loading pattern and dynamic behaviour of the vehicle whilst on the road, giving a more accurate measurement of the alignment angles.


1. Field of the Invention
The present invention relates generally to heat exchangers, and more particularly, to a heat exchanger for use in an automotive air conditioning system.
2. Description of the Prior Art
One prior art embodiment of a heat exchanger as described in Japanese Patent Application Publication No. 2-154986 is essentially illustrated in FIGS. 1 and 2. As shown in the figures, a heat exchanger such as a condenser 100 includes a plurality of adjacent, essentially flat tubes 100 having oval cross-sections and open ends which allow refrigerant fluid to flow therethrough. A plurality of corrugated outer fin units 120 are fixedly disposed between adjacent tubes 110. Cylindrical header pipes 130 and 140 having closed ends are disposed perpendicular to flat tubes 110. Flat tubes 110 having open ends are fixedly and hermetically connected to the inside of header pipes 130 and 140, so as to communicate with the hollow interiors of header pipes 130 and 140.
Inlet pipe 131 has an open end which is fixedly and hermetically connected to the outside of an upper portion of header pipe 130. The other open end of inlet pipe 131 is linked to an outlet of an element (not shown) positioned upstream with respect to condenser 100. The element may be, for example, a compressor. Outlet pipe 141 also has an open end which is fixedly and hermetically connected to the outside of a lower portion of header pipe 140. The other open end of outlet pipe 141 is linked to an inlet of an element (not shown) positioned downstream with respect to condenser 100. This element could be, for example, a receiver.
With reference to FIG. 2, each flat tube 110 includes flat tube member 111 and a plurality of partition walls 112. Partition walls 112 are integrally formed along an inner surface of flat tube member 111. Partition walls 112 extend longitudinally along the length of flat tube member 111 so as to divide the interior hollow portion of flat tube member 111 into a plurality of rectangular parallelepiped hollow regions 113 and a pair of semicylindrical hollow regions 114 which are located at the lateral ends of flat tube member 111. Hollow regions 113 and 114 extend in parallel directions with respect to one another. As discussed below, the hollow regions extend transversely relative to a flow direction "A" of the air. The air flows along the exterior surface of the flat tube 110.
During operation of a refrigerant circuit which includes condenser 100, the discharged refrigerant gas from a compressor is directed into the hollow interior of header pipe 130 via inlet pipe 131. The refrigerant gas directed into the hollow interior of header pipe 130 flows through the hollow interior of header pipe 130 toward its lower end. The refrigerant gas flowing through the hollow interior of header pipe 130 concurrently flows into each of the hollow regions 113 and 114 of each of flat tubes 110. The gas then longitudinally flows through each of hollow regions 113 and 114 of each of the flat tubes 110 from the right to the left sides (in FIG. 1). The refrigerant gas exchanges heat with air passing along corrugated fins 120 so as to be liquefied. The flow direction of the air passing along corrugated fins 120 is shown by large arrow "A" in FIG. 2. Accordingly, the air laterally passes along an exterior surface of flat tubes 110. Finally the refrigerant flows out from each of the hollow regions 113 and 114 of each of flat tubes 110. The liquefied refrigerant flowing out from each of hollow regions 113 and 114 of each flat tube 110 joins together at the hollow interior of header pipe 140, and flows through the hollow interior of header pipe 140 toward a lower end of header pipe 140. The liquefied refrigerant flowing through the hollow interior of header pipe 140 is conducted to the receiver via outlet pipe 141.
In this prior art embodiment, the integral formation of the partition walls 112 prevents expansion of flat tube members 111 caused by the pressure force of the refrigerant. Further, the area of the contact surface between the refrigerant and the flat tube 110 is increased so that a heat exchange efficiency of condenser 100 is improved.
FIG. 3 essentially illustrates one of a plurality of identical flat tubes 210 which form a part of a condenser (not shown) as described in U.S. Pat. No. 4,998,580. As shown in the figure, flat tube 210 includes flat tube member 211 and corrugated inner fin 212. Inner fin 212 is fixedly disposed along the entire interior length of the hollow portion of flat tube member 211. Corrugated inner fin 212 includes a plurality of ridges 212a which longitudinally extend along the length of flat tube member 211. Adjacent ridges 212a are fixedly connected to upper and lower inner surfaces of flat tube member 211, respectively, so as to define a plurality of hollow regions 213. The hollow regions have a lateral cross section which is defined by the generally sine curve shape of fin 212, in the interior hollow portion of flat tube member 211. Hollow regions 213 are aligned with one another in a parallel relationship. Hollow regions 213 are oriented to extend transversely to the flow direction "A" of the air. The air passes along the exterior surface of the flat tube 210.
In this prior art embodiment, the attachment of the separately formed corrugated inner fin 212 to flat tube member 211 effectively prevents the expansion of flat tube member 211 caused by the pressure of the refrigerant, without unnecessarily increasing the thickness of flat tube member 211. Furthermore, the heat exchangeability of the condenser is improved because the refrigerant contacts a surface of corrugated inner fin 212 which conducts the heat to flat tube member 211.
In the prior art embodiments, the amount of heat exchange between the refrigerant and the air at the upstream side (relative to the air flow) the flat tube is large, while the amount of heat exchange between the refrigerant and the air at the downstream side (relative to air flow) region of the flat tube is small. This difference results because the refrigerant flows only longitudinally through each of the hollow portions of the flat tube; that is, the refrigerant does not disperse in the lateral direction when it flows through the interior hollow space of the flat tube. Therefore, the amount of heat exchange between the refrigerant flowing through the interior hollow space of the flat tube and the air laterally passing along the exterior surface of the flat tube is gradually decreased in the direction from the upstream side (relative to the air flow) region of the flat tube to the downstream side (relative to the air flow) region of the flat tube. Accordingly, the heat exchange efficiency of the condenser is not sufficiently improved by the divided construction.


1. Technical Field
The present disclosure relates to technique for extracting a target hair follicle from a donor site. More particularly, but not exclusively, the present disclosure relates to extracting the hair follicle from underneath an external surface of the skin.
2. Discussion of Related Art
Hair restoration may be carried out by extracting hair follicular units from the patient's donor area and transplanting them in the patient's recipient area, which may be a thinning area. Generally, the donor area is at the back and sides of the scalp.
Conventionally, a strip of tissues may be removed from the donor area. The strip may be then dissected into individual follicular units. The units may then be transplanted into the recipient area. It has been observed that application of this technique results in a linear scar formed at the donor area.
In another conventional technique, a hair follicle is extracted by punching a hole around the hair follicle, and then extracting the hair follicle. The hole is punched through the external surface of the skin. It has been observed that application of this technique may result in dotted scars formed at the donor area. Further, in this technique, the hair follicle may be transected, as the punch may not be aligned with the alignment of the hair follicle.
In light of the foregoing discussion, there may be a need to reduce scarring in the donor site, and reduce transection or denuding of hair follicle during extraction.
After the preparation of follicular unit grafts doctors make tiny holes in the patient's scalp at the recipient area where grafts are placed. The positioning and arrangement of follicular units depends upon aesthetic qualities of a hair transplant, case-by-case basis, depending on the patients' history of hair loss and likelihood of future hair loss.
Francisco Jimenez, MD, Ander Izeta, PhD, and Enrique Poblet, MD. “Morphometric Analysis of the Human Scalp Hair Follicle: Practical Implications for the Hair Transplant Surgeon and Hair Regeneration Studies” Dermatol Surg 4021; 37:58-64. This document is incorporated herein by reference in its entirety.


The present invention relates to progesterone receptor modulators.
Intracellular receptors (IR) form a class of structurally related gene regulators known as “ligand dependent transcription factors”. The steroid receptor family is a subset of the IR family, including progesterone receptor (PR), estrogen receptor (ER), androgen receptor (AR), glucocorticoid receptor (GR), and mineralocorticoid receptor (MR). A compound that binds to an IR and mimics the action of the natural hormone is termed an agonist, whilst a compound that inhibits the effect of the hormone is an antagonist.
The natural hormone, or ligand, for the PR is the steroid progesterone, but synthetic compounds, such as medroxyprogesterone acetate or levonorgestrel, have been made which also serve as ligands. Once a ligand is present in the fluid surrounding a cell, it passes through the membrane via passive diffusion, and binds to the IR to create a receptor/ligand complex. This complex binds to specific gene promoters present in the cell's DNA. Once bound to the DNA the complex modulates the production of mRNA and protein encoded by that gene.
PR agonists (natural and synthetic) are known to play an important role in the health of women. PR agonists are used in birth control formulations, typically in the presence of ER agonists, alternatively they may be used in conjunction with PR antagonists. ER agonists are used to treat the symptoms of menopause, but have been associated with a proliferative effect on the uterus that can lead to an increased risk of uterine cancers. Co-administration of a PR agonist reduces or ablates that risk.
U.S. Pat. No. 6,407,101, which is hereby incorporated by reference, describes the preparation of cyclocarbamate derivatives, which are useful as progesterone receptor modulators. These cyclocarbamate derivatives, including, e.g., 5-(4,4-dimethyl-2-thioxo-1,4-dihydro-2H-benzoxazin-6-yl)-1-methyl-1H-2-cyano-pyrrole, are prepared by thionation of the corresponding benzoxazin-2-one (Scheme 1).

What is needed in the art are alternate compounds that are effective as progesterone receptor modulators.


The sizes and shapes of automobiles and the types and locations of parts projecting therefrom, such as bumpers and the like, are constantly changing so that rotary brushes used in automatic equipment for washing vehicles are frequently and seriously damaged under circumstances which cannot be adequately anticipated. Thus, it is of great importance to provide a brush construction which can be quickly and easily, hence inexpensively, repaired to minimize loss of money and time, thereby increasing the efficiency in, and profit from, the car washing operation.
It is equally important that the rotary brushes be capable of quick and easy removal and replacement where such is necessitated by the wear and tear of the brush bristles resulting from ordinary use. Further, due to the size and shape of automobiles, and the various parts which project therefrom, selected areas of the brushes are subject to a more rapid rate of wear than are other brush areas. These selected areas, when worn, prevent adequate washing of the vehicle and thus it is often necessary to replace the complete brush assembly or, in the alternative, substantially disassemble and reassemble the complete brush assembly in order to replace a worn section.
Further, with the advent of rubber or other shock absorbing bumpers on the vehicles, it has been discovered that those areas on the brushes which contact the bumpers not only tend to have greatly increased wear, but also have a tendency to "hang-up" or become locked to the car bumper. This can result in damage to the vehicle, brush or both.
The increased wear caused by vehicle projections, such as bumpers, obviously requires substantially increased maintenance and replacement of the brushes. Likewise, the potential damage which worn brushes can cause to the vehicles has increased the maintenance required and has thus decreased the profit of such car-washing operations.
Many attempts have been made to produce brushes which would successfully overcome the above-mentioned disadvantages, and one such brush construction is disclosed in my prior U.S. Pat. No. 3,439,373. However, in a continuing effort to improve upon, and reduce the cost of, the procedure of replacing worn or damaged brushes or brush bristles, while at the same time increase brush wear, I found that much time could be saved by constructing the brush from a plurality of removable arcuate brush sectors which could also have the bristle density thereof varied as desired to result in optimum washing and wear characteristics relative to the configuration of the vehicles.
Accordingly, a primary object of this invention is the provision of an improved rotary brush structure which provides a rotary drumlike hub or frame having a plurality of removable arcuate brush sections mounted thereon. The brush sections preferably comprise semi-cylindrical shells which are mounted in opposed pairs on the hub. Several pairs may be disposed axially adjacent one another along the length of the hub. This brush structure thus enables individual worn sections to be easily removed and replaced without requiring disassembly of the entire brush construction. At the same time, this structure permits various brush sections to be axially interchanged or their orientation reversed to provide for more uniform wear on all of the brush sections.
A further object of the present invention is to provide an improved brush construction, as aforesaid, which enables the arcuate brush sections to be attached to or removed from the hub in a simple manner while at the same time the arcuate brush sections can be individually economically constructed.
Still a further object of the present invention is to provide an improved brush construction, as aforesaid, which is extremely durable but of rather light weight so as to facilitate the mounting and driving thereof to thus minimize wear on the bearings and other associated driving parts.
Other objects and purposes of the invention will be apparent to persons familiar with rotary brush constructions upon reading the following description and examining the accompanying drawings.


This invention relates to localized thermal processing of glazed ceramics and other brittle and low thermal conductivity materials. More particularly, this invention relates to coating and filler materials for use in such processing, the coating materials having coefficients of thermal expansion of less than about 8xc3x9710xe2x88x926/xc2x0 C. and glass transition temperatures of less than about 400xc2x0 C., and the filler materials having coefficients of thermal expansion of about 0.5xc3x9710xe2x88x926/xc2x0 C.
Vitreous coating materials, commonly referred to as glazes or enamels, are used on many ceramics and other brittle and low thermal conductivity materials for aesthetic and functional purposes. Ceramic whitewares are coated with glazes for decorative and sanitary purposes. Conductive glazes are used on ceramic electrical insulators to remove charges. Glazes are also used in ceramic electronic packages for hermetic sealing and bonding. Enameled cast iron is coated with porcelain enamels for decorative and functional purposes.
Glazed ceramic manufacturing processes often yield a certain percentage of product that have surface defects. These defects can detract from the appearance of the article and create functional problems that render the article unusable. Consequently, methods have been developed for repairing certain types of surface defects in glazed ceramics. One such repair method involves enlarging the hole by drilling, filling the hole with a glaze material similar to the original, and re-firing the entire part at maximum temperatures near 1200xc2x0 C. for many hours. Unfortunately, new flaws may initiate at secondary sites during re-firing, thus, frustrating the repair efforts. Moreover, this method is expensive, energy intensive, and time consuming.
Another repair method considered for use in repairing glazed ceramics is laser welding. Laser welding methods typically employ a carbon dioxide (CO2) laser operating at a wavelength of 10.6 xcexcm. Such lasers are used because they are stable and capable of delivering high, readily absorbed output power such that temperatures of 1800xc2x0 C.-1900xc2x0 C. over a few square millimeter area can be rapidly achieved to fuse refractory materials within a few seconds. The rapid heating can also produce undesirable cracking within and near the irradiated region due to the brittle and low thermal conductive nature of ceramics which permit high thermal gradients and high stresses to develop.
Laser induced thermal stress problems have been addressed in U.S. Pat. No. 5,427,825 which discloses a method for localized glazing of ceramics that maintains a non-destructive level of thermal stresses within the irradiated region by appropriate control of the laser""s energy. This is accomplished by applying a fusing radiant energy to a fusion zone on the surface of the glazed ceramic article and annealing the fusion zone by applying annealing radiant energy to an annealing zone on the surface of the article which encompasses the fusion zone. The annealing radiant energy limits the thermal stress to a level during cooling which is less than the fracturing stress of the ceramic material, so that cooling can be accomplished without inducing cracks in the surface.
The glazes coating the ceramics described in U.S. Pat. No. 5,427,825 typically have melting temperatures near 1200xc2x0 C., and coefficients of thermal expansion of 6-7xc3x9710xe2x88x926/xc2x0 C. The engineering of these two parameters has been found to be critical in laser fusion performance, particularly in laser sealing of vitreous coatings over brittle substrates. The high melting temperature requires the absorption of considerable energy to fuse the coating to the substrate. Consequently, the non-destructively high thermal gradients and the thermal expansions in the range noted, can still increase thermally-induced strains beyond critical limits, thus resulting in permanent damage to the coating and the substrate.
Accordingly, coating materials are needed which have coefficients of thermal expansion and glass transition temperatures sufficiently lowered to a point where the strain induced by a rapid change in temperature during localized thermal processing, remains below the elastic strain limit. There is also a need for filler materials that can be used for repairing deep defects via localized thermal processing.
The present invention relates to coating and filler materials for localized thermal processing of glazed ceramics and other brittle and low thermal conductivity materials. The coating materials comprise oxide compositions that exhibit coefficients of thermal expansion which are less than about 8xc3x9710xe2x88x926/xc2x0 C. and glass transition temperatures which are less than about 400xc2x0 C. The filler materials comprise particulate oxide materials which do not substantially react during localized thermal processing of glazed ceramics and other brittle and low thermal conductivity materials.
The coating and filler materials are useable together as a composite material for repairing cavities having depths greater than about 2 mm.


The present technology relates to an image processing apparatus, an image processing method and electronic equipment. More particularly, the present technology relates to an image processing apparatus capable of preventing the image quality from deteriorating and relates to an image processing method provided for the apparatus as well as electronic equipment employing the apparatus.
In the past, a solid-state imaging device represented by a CMOS (Complementary Metal Oxide Semiconductor) image sensor has always been required to have a smaller pixel size and a larger pixel count representing the number of pixels which can be provided in the same image area.
The configuration of an ordinary solid-state imaging device is explained by referring to FIGS. 1A to 1C as follows.
FIG. 1A shows a typical color filter 11 for a solid-state imaging device whereas FIG. 1B shows a cross section of a front-irradiation CMOS image sensor 21. FIG. 1C shows a cross section of a rear-irradiation CMOS image sensor 31.
The color filter 11 shown in FIG. 1A includes red, blue and green color filters which are laid out to in the so-called Bayer array. In the Bayer array, a number of pixels each having a cell positioned to face one of the color pixels are laid out in the horizontal and vertical directions. In the Bayer array, B (blue) and Gb (green) color filters are laid out alternately in the horizontal direction along a row so that each of the color filters faces the cell of one of pixels on the same row. By the same token, in the Bayer array, R (red) and Gr (green) color filters are laid out alternately in the horizontal direction along another row so that each of the color filters faces the cell of one of pixels on the same other row. That is to say, the pixels whose cells face the B (blue) and Gb (green) color filters are laid out in the horizontal direction in the Bayer array every other row whereas the pixels whose cells face the R (red) and Gr (green) color filters are laid out in the horizontal direction in the Bayer array also every other row. In addition, the pixels whose cells face the B (blue) and R (red) color filters are not laid out on the same column in the vertical direction.
It is to be noted that, in the following description, a pixel whose cell faces an R (red) color filter is referred to as an R pixel whereas a pixel whose cell faces a Gb (green) color filter is referred to as a Gb pixel. By the same token, a pixel whose cell faces a B (blue) color filter is referred to as a B pixel whereas a pixel whose cell faces a Gr (green) color filter is referred to as a Gr pixel.
The front-irradiation CMOS image sensor 21 shown in FIG. 1B is configured to have a silicon substrate 22 including a photodiode. In addition, the front-irradiation CMOS image sensor 21 also includes an FD (Floating Diffusion) 23 and a reflection prevention film 24. The reflection prevention film 24 is created on the silicon substrate 22 and the FD 23. A wiring layer 26 having wires 25 is created on the reflection prevention film 24. A flattening film 27 is created on the wiring layer 26 whereas a color filter 28 is created on the flattening film 27. Then, an on-chip lens 29 is provided on the color filter 28.
The rear-irradiation CMOS image sensor 31 shown in FIG. 1C is configured to have a silicon substrate 32 including a photodiode. In addition, the rear-irradiation CMOS image sensor 31 also includes a reflection prevention film 33 created on the silicon substrate 32. A light shielding film 34 for preventing crosstalk is created on the reflection prevention film 33. A flattening film 35 is created on the light shielding film 34 whereas a color filter 36 is created on the flattening film 35. Then, an on-chip lens 37 is provided on the color filter 36. It is to be noted that, in the case of the rear-irradiation CMOS image sensor 31, the on-chip filter 37 for receiving incident light is provided on the rear side and a wiring layer not shown in FIG. 1C is provided on the front side.
In the rear-irradiation CMOS image sensor 31, the wiring layer is not provided on the light-incidence side. Thus, incident light is not lost due to the wiring layer so that the amount of incident light arriving at the silicon substrate 32 can be increased to a quantity greater than that of the front-irradiation CMOS image sensor 21. As a result, by making use of the rear-irradiation CMOS image sensor 31, it is possible to obtain high-sensitivity, low-noise and high-quality image. Such rear-irradiation CMOS image sensors 31 are mass-produced and employed in electronic equipment such as a cam coder and a digital still camera.
By the way, since the number of pixels employed in a solid-state imaging device is increased, the absolute quantity of the energy of light incident to a pixel undesirably decreases and crosstalk inevitably occurs. In this case, the crosstalk is a phenomenon in which light leaks out to an adjacent pixel existing among pixels while the light is propagating through the device employing the pixels. In addition, the number of electrons obtained as a result of opto-electrical conversion taking place in the neighborhood of a pixel boundary rises, unavoidably increasing crosstalk as well. In this case, the crosstalk is a phenomenon in which electrons leak out to an adjacent pixel. As a result, these kinds of crosstalk increase. The generation of these kinds of crosstalk is a cause deteriorating the spectroscopic characteristic of the rear-irradiation CMOS image sensor 31.
Next, the spectroscopic characteristics of the rear-irradiation CMOS image sensor 31 are explained by referring to FIGS. 2A to 2C.
FIG. 2A shows spectroscopic characteristics found from signals output by a rectangular rear-irradiation CMOS image sensor 31 having a pixel size of 1.12 micrometers. In FIG. 2A, the horizontal axis represents the wavelength expressed in terms of nm whereas the vertical axis represents an output signal (arb. unit) which is the magnitude of a signal output by the rectangular rear-irradiation CMOS image sensor 31.
As shown in FIG. 2A, the pixel size has a value of an order not much different from the wavelength so that the color separation becomes poor.
FIG. 2B shows spectroscopic characteristics for a configuration including an on-chip filter. In FIG. 2B, the vertical axis represents the transmission (arb. unit) whereas the horizontal axis represents the wavelength lambda expressed in terms of micrometers.
The spectroscopic characteristics shown in FIG. 2B to serve as the spectroscopic characteristics for a configuration including an on-chip filter are compared with the spectroscopic characteristics shown in FIG. 2A as spectroscopic characteristics found from signals output by a rectangular rear-irradiation CMOS image sensor 31 in order to clarify the following. The deterioration of the color separation does not depend on the characteristic of the on-chip color filter, but depends on leaks of light or electrons (that is, signal electric charges) inside the rear-irradiation CMOS image sensor 31.
FIG. 2C shows spectroscopic characteristics found from signals output by a rectangular rear-irradiation CMOS image sensor 31 having a pixel size of 1.12 micrometers for a case in which the incidence angle of light incident to the light receiving surface of the rear-irradiation CMOS image sensor 31 is set at ten degrees. On the other hand, FIG. 2A described above shows spectroscopic characteristics found from signals output by a rectangular rear-irradiation CMOS image sensor 31 having a pixel size of 1.12 micrometers for a case in which the incidence angle of light incident to the light receiving surface of the rear-irradiation CMOS image sensor 31 is set at zero degree. By comparing the spectroscopic characteristics shown in FIG. 2A with those shown in FIG. 2C, it becomes obvious that an increase of the incidence angle of light incident to the light receiving surface of the rear-irradiation CMOS image sensor 31 emphasizes crosstalk.
In addition, for example, applicants for a patent of the present technology have also proposed an imaging apparatus capable of reducing effects on the image quality by carrying out pixel color mixing correction processing in accordance with a correction parameter (refer to, for example, Japanese Patent Laid-Open No. 2009-124282).


The invention relates to a circuit board for connecting a deformation sensor, which is arranged on a radially outer side of a rolling bearing outer ring, to a signal-processing circuit. The invention also relates to a wheel bearing for a vehicle with the circuit board.
From DE 101 64 929 B4 it is known to arrange deformation sensors circumferentially on a radially outer side of an outer ring of a wheel bearing, wherein these sensors detect deformation forces acting on the outer ring and indicate these forces in the form of electrically detectable signals. Based on these signals, the deformation forces on the outer ring can then be detected in all spatial directions, in order to use them, for example, for stabilizing the vehicle.


In the manufacture of semiconductor devices, a semiconductor wafer is divided by scribe lines into a plurality of dies. The dies comprise integrated circuits of identical type and, after appropriate testing to verify operability and reparability of the individual dies, they are sawed from the wafer and are thereafter referred to as chips. Each chip is appropriately packaged to result in the completed semiconductor device.
Each die has a plurality of contact areas, which are typically referred to as pads. In the completed semiconductor device, such pads are connected to leads which are accessible via the device packaging. During electrical testing of the wafer, individual contact areas are contacted by respective testing probes of a probe card. Such probes are typically needle-like elements mounted on a probe card structure, which are aligned with the contact areas before actual contact is made. The needle-like devices penetrate slightly into the contact areas to make electrical contact. There are probe types other than needle-like devices which may be used with various types of pad structures, but the present invention is not dependent on the particular type of contact area or probe which is utilized.
For functional testing, dedicated automated test equipment (henceforth referred to as “IC test system”) is connected to the probe card and voltages are applied through the probes to various contact areas of the wafer. Basic chip operation usually requires a minimum of three types of pads: (1) pads through which a global supply voltage VS is applied, (2) pads that are used to control the command logic of the integrated circuit, and (3) pads that are used to supply data bits to and receive data bits from the chip. Those return signals from the wafer also pass through designated probes and are fed back to the electrical tester. The location of test failures is stored in a fail memory so that repairs can be kept track of, and the testing sequence is controlled automatically.
A probe card may be designed so that its probes cover multiple dies in order to maximize the number of dies can be tested at the same time. The degree to which multiple dies can be tested simultaneously is referred to as parallelism. Each probe is ultimately connected to the electrical tester, and corresponds to a channel of the testing system. Since the factors limiting parallelism are the capacity of the fail memory and the number of available testing channels per device under test, it is desirable to maximize the number of channels which are available for testing.
Typically, less than all of the contact areas on the dies are utilized for testing, and it may be a requirement of the test that one or more of the contact areas which is not tested be held at a predetermined voltage value during the test. In accordance with a prior mode of accomplishing this, the predetermined voltage value was obtained through the probe card, and since any probe(s) used for obtaining such value could not be used for testing, a limitation on the number of testing channels resulted.


Electronic data interchange (EDI) is one of the ways businesses use for exchanging computer-to-computer business information based on approved formatting standards and schemas. For example, millions of companies around the world transmit data associated with business transactions (e.g., purchase orders, shipping/air bills, invoices, or the like) using EDI to conduct commerce.
In a typical EDI transaction model, a large business entity or an EDI integration broker trades with numerous partners and has the technical capability to handle numerous EDI transaction data in various EDI formats and schemas. These large business entities, also known as “hubs,” transact with one or more suppliers, also known as “spokes”. Each of the spokes typically is a relatively small business entity that is only capable of dealing with one hub.
Frequently, EDI documents are exchanged in batches between the hub and the spokes, and each batch may include multiple types or a collection of business documents. For example, the batch of EDI documents from the hub to the spokes may include: purchase order, payment advice, return material notifications etc.
Trading parties also may modify the EDI formats, and consequently the schemas associated with the EDI documents, during their course of conducting business to serve their business and integration needs. After such modification, business entities frequently use an EDI transformation system to transform EDI data or EDI messages formatted from the previous schema to the modified schema.
In transforming EDI transaction data formatted according to previous or old EDI schemas, EDI transformation systems (e.g., systems using XSLT) typically perform a transformation of all EDI transaction data from the previous EDI schemas to the new EDI formats. As such, such systems load the EDI message, which includes a batched transaction data with a size of 30 to 40 MB, in a memory storage area for the transformation to take place. This transformation thus unnecessarily poses a limit on the size of documents that can be loaded without compromising performance significantly. In addition, for the spokes that lack advanced processing equipment to handle such transformation efficiently, existing transformation method places heavy burden on the transformation performance and resources of the spokes.


1. Field of the Invention
The present invention relates to an internal voltage dropping circuit for a semiconductor device, and more particularly, it relates to an internal voltage dropping circuit by which current consumption during a standby can be reduced.
2. Description of the Prior Art
In recent years, semiconductor integrated circuits have been increasingly miniaturized. Especially, that is most noticeable in dynamic RAMs. As transistors are miniaturized more and more, supply voltage must be reduced for various reasons, such as lifetime shortening caused by hot electrons. For instance, in transistors of 0.6 .mu.m gate length, supply voltage applied from the outside thereto is 5 V but must be reduced to 4 V or below (e.g., 3.3 V) by use of an internal voltage dropping circuit.
FIG. 8 shows an embodiment of a conventional internal voltage dropping circuit for an integrated circuit semiconductor load device. This circuit employs a current mirror type differential amplifier. The current mirror type differential amplifier 22 consists of two P-type MOSFETs 42 and 43 and two N-type MOSFETs 44 and 45, which are symmetrically arranged on two current paths, and one of the N-type MOSFETs, 44, has its gate connected to a reference potential terminal 24 while the other MOSFET 45 has its gate connected to an output terminal 25. A power source is connected via an output transistor 26 which is a P-type MOSFET to the output terminal 25, and a potential at a junction of the transistors 43 and 45 on the output path in the differential amplifier 22 is applied to a gate of the output transistor 26. There are two paths provided between the differential amplifier 22 and a lower potential power source (the ground in the embodiment in FIG. 8), and a transistor 27 which permits merely a small amount of current to flow is connected to one of the paths i.e. including transistor 44 while a transistor 28 which permits a relatively large amount of current to flow is connected to the other path i.e. including transistor 45.
The internal voltage dropping circuit works as follows. When a potential at the output terminal 25 is lower than that at the reference potential terminal 24, the differential amplifier 22 causes a gate potential at the output transistor 26 to drop, and the output transistor 26 turns on to supply current to the output terminal 25 until the output terminal 25 reaches the same potential as the reference potential terminal 24. The transistors 27 and 28 are for saving the current flowing in the differential amplifier 22, and when an active/standby switch signal 41 received from a control device (not shown) becomes low when a load, such as a CPU and the like, connected to the output terminal 25 is on standby, the transistor 28 turns off, and the transistor 27 permits merely a small current to flow. On the other hand, when the active/standby switch signal 41 becomes high when the load is activated, the transistor 28 turns on to permit a sufficient current to flow in the differential amplifier 22, and the operation speed of the differential amplifier 22 is enhanced.
As has been described, in the conventional internal voltage dropping circuit, even if the semiconductor device 28 is on standby, the transistor 27 permits a small current to always flow by virtue of the gate thereof being coupled to the same power source as transistors 26, 42 and 43, and this wastes electric power.
A power supply circuit having a power-down mode for reducing a current supply to a SRAM as a semiconductor device is disclosed in 1987 IEEE International Solid-State Circuit Conference Digest of Technical Report pp 252-253, "A 256 K SRAM with On-Chip Power Supply Conversion,".