Researchers from the University of Texas developed high performance (25-Ghz) printed graphene field-effect-transistors (G-FETs) on flexible plastic substrates. They say these are the world's fastest such transistors to date.
The researchers are very focused on keeping costs down. The fabrication process started with the non-graphene structures (the electrodes and gates), deposited on sheets of plastic. Separately they grew large sheets of graphene on metal. The graphene was then peeled off and transferred to complete the device. This "graphene-last" approach was chosen because the graphene is very sensitive to all the processing needed to make the other components. The final step was to encapsulate the circuit.
The researchers are now working together with 3M and Corning to demonstrate printed graphene circuits on a larger, more practical scale. They are also designing a printer that can continuously produce graphene circuits. They expect such transistors to be produced commercially using their process within 5 to 10 years.