one of the disadvantages of the typical MOSFET is the reduced power handling levels (typically less than 1 mW) compared to BJT transistors. This shortfall for a device with so many positive characteristics can be soften by changing the construction of the device from one of the planar nature to one with a vertical structure. All the elements of the planar MOSFET are present in the vertical metal oxide FET (VMOS). The term vertical is primarily due to the fact that channel is now formed in the vertical direction rather than in horizontal direction as for the planar device. However the channel has also a appearance of "V" cut in the semiconductor base, which often stand outs as a characteristics for memorization of the name of the device.