Explains the physics and properties of MuGFET devices, how they are made and how circuit designers can use them to improve the performances of integrated circuits
Covers the emergence of quantum effects and novel electrical transport phenomena due to the reduced size of the devices
Describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs
Presents descriptions of the technological challenges and options, including a physically based compact model
Part of the book series: Integrated Circuits and Systems (ICIR)
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Table of contents (7 chapters)
About this book
FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.
The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.
FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.
- field-effect transistor
- integrated circuit
Editors and Affiliations
University of California, Davis, USA
Book Title: FinFETs and Other Multi-Gate Transistors
Editors: Jean-Pierre Colinge
Series Title: Integrated Circuits and Systems
Publisher: Springer New York, NY
Copyright Information: Springer-Verlag US 2008
Hardcover ISBN: 978-0-387-71751-7Published: 26 November 2007
Softcover ISBN: 978-1-4419-4409-2Published: 25 November 2010
eBook ISBN: 978-0-387-71752-4Published: 17 October 2007
Series ISSN: 1558-9412
Series E-ISSN: 1558-9420
Edition Number: 1
Number of Pages: XV, 340