  The electronic implications of strain in graphene can be captured at low
energies by means of pseudovector potentials which can give rise to
pseudomagnetic fields. These strain-induced vector potentials arise from the
local perturbation to the electronic hopping amplitudes in a tight-binding
framework. Here we complete the standard description of the strain-induced
vector potential, which accounts only for the hopping perturbation, with the
explicit inclusion of the lattice deformations or, equivalently, the
deformation of the Brillouin zone. These corrections are linear in strain and
are different at each of the strained, inequivalent Dirac points, and hence are
equally necessary to identify the precise magnitude of the vector potential.
This effect can be relevant in scenarios of inhomogeneous strain profiles,
where electronic motion depends on the amount of overlap among the local Fermi
surfaces. In particular, it affects the pseudomagnetic field distribution
induced by inhomogeneous strain configurations, and can lead to new
opportunities in tailoring the optimal strain fields for certain desired
functionalities.
