  Analytical modeling and dynamics of multidomain in
metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this
paper. The formation of multi-domain (MD) leads to oscillations in the
conduction band in the channel and periodicity in the local electric field in
the ferroelectric region. The impact of 2-D local electric field on the MD
switching is captured in the model using the domain wall velocity concept. The
optimum values of oxide thickness, ferroelectric thickness and channel length
are calculated which corresponds to mono-domain device operation. Deviation
from the optimum device parameters causes the transition of mono-domain state
to multi-domain state in the ferroelectric. This work can be used as a
guideline for designing MFIS-NCFETs, which provides the device parameters that
leads to monodomain state in the MFIS-NCFET.
