  A traveling wave model for a semiconductor diode laser based on quantum wells
is presented as well as a comprehensive theoretical model of the lasing
dynamics produced by the intensity discrimination of the nonlinear
mode-coupling in a waveguide array. By leveraging a recently developed model
for the detailed semiconductor gain dynamics, the temporal shaping effects of
the nonlinear mode-coupling induced by the waveguide arrays can be
characterized. Specifically, the enhanced nonlinear pulse shaping provided by
the waveguides are capable of generating stable frequency combs wavelength of
800 nm in a GaAs device, a parameter regime not feasible for stable combline
generation using a single waveguide. Extensive numerical simulations showed
that stable waveform generation could be achieved and optimized by an
appropriate choice of the linear waveguide coupling coefficient, quantum well
depth, and the input currents to the first and second waveguides. The model
provides a first demonstration that a compact, efficient and robust on-chip
comb source can be produced in GaAs.
