  We investigated STM-induced chlorine desorption and lithographic patterning
of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600
K. STM lithography has previously focused on hydrogen-based chemistry for donor
device fabrication. Here, to develop halogen-based chemistries for fabricating
acceptor-based devices, we substituted the hydrogen resist with chlorine.
Lithographic patterning was explored using both field emission patterning to
desorb chlorine from large areas as well as atomic precision patterning to
desorb chlorine along one to two dimer rows at a time. We varied the
experimental parameters for lithographic patterning and found a positive
correlation between pattern line widths and both sample bias voltage and total
electron dose. Finally, the use of chlorine, bromine, and iodine as
lithographic resists to broaden the range of available chemistries for future
device fabrication utilizing halogen-based dopant precursors is discussed.
