  A domain wall separating two oppositely magnetized regions in a ferromagnetic
semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V
characteristics similar to those of a p-n diode. We study these characteristics
as functions of wall width and temperature. As the width increases or the
temperature decreases, direct tunneling between the majority spin bands
decreases the effectiveness of the diode. This has important implications for
the zero-field quenched resistance of magnetic semiconductors and for the
design of a recently proposed spin transistor.
