  Due to its low bandgap and high optical efficiency, tellurium is considered
an important material candidate for mid-infrared applications. Taking advantage
of its structural anisotropy, we fabricated tellurium nanowire devices and
investigated the radiative interaction of charge carriers by the
polarization-resolved photoconductivity spectra under mid-infrared
illumination. The intensity of the photoresponse shows sensitive dependence on
temperature and could be significantly boosted by positive voltage bias from
the back gate.
