  We demonstrate an exotic doubled-channeled NT GAAFET (DC NT GAAFET) structure
with Ion boost in comparison with NT GAAFET and NW GAAFET with the same
footprint. Ion gains of 64.8% and 1.7 times have been obtained in DC NT GAAFET
in compared with NT GAAFET and NW GAAFET. Ioff of DC NT GAAFET degrades by
61.8% than that of NT GAAFET, SS is almost comparable in two kinds of device
structures, whereas Ion/Ioff ratio in DC NT GAAFET still gains subtly, by 2.4%,
than NT GAAFET thanks to the substantial Ion aggrandizement, indicating the
sustained superior gate electrostatic controllability in DC NT GAAFET with
regarding to NT GAAFET regardless of additional channel incorporated. On the
other side, both DC NT GAAFET and NT GAAFET exhibit superior device performance
than NW GAAFET in terms of high operation speed and better electrostatic
controllability manifested by suppressed SCEs.
