  Heterogenous integration of complex epitaxial oxides onto Si and other target
substrates is recently gaining traction. One of the popular methods involves
growing a water-soluble and highly reactive sacrificial buffer layer, such as
Sr3Al2O6 (SAO) at the interface, and a functional oxide on top of this. To
improve the versatility of layer transfer techniques, it is desired to utilize
stable (less reactive) sacrificial layers, without compromising on the transfer
rates. In this study, we utilized a combination of chemical vapor deposited
(CVD) graphene as a 2D material at the interface and pulsed laser deposited
(PLD) water-soluble SrVO3 (SVO) as a sacrificial buffer layer. We show that the
graphene layer enhances the dissolution rate of SVO over ten times without
compromising its atmospheric stability. We demonstrate the versatility of our
hybrid template by growing ferroelectric BaTiO3 (BTO) via PLD and Pb(Zr, Ti)O3
(PZT) via Chemical Solution Deposition (CSD) technique and transferring them
onto the target substrates and establishing their ferroelectric properties. Our
hybrid templates allow for the realization of the potential of complex oxides
in a plethora of device applications for MEMS, electro-optics, and flexible
electronics.
