  Graphene has an extremely high carrier mobility partly due to its planar
mirror symmetry inhibiting scattering by the highly occupied acoustic flexural
phonons. Electrostatic gating of a graphene device can break the planar mirror
symmetry yielding a coupling mechanism to the flexural phonons. We examine the
effect of the gate-induced one-phonon scattering on the mobility for several
gate geometries and dielectric environments using first-principles calculations
based on density functional theory (DFT) and the Boltzmann equation. We
demonstrate that this scattering mechanism can be a mobility-limiting factor,
and show how the carrier density and temperature scaling of the mobility
depends on the electrostatic environment. Our findings may explain the high
deformation potential for in-plane acoustic phonons extracted from experiments
and furthermore suggest a direct relation between device symmetry and resulting
mobility.
