  We study theoretically the optics in undoped direct gap semiconductors which
are strongly driven in the THz regime. We calculate the optical sideband
generation due to nonlinear mixing of the THz field and the near infrared
probe. Starting with an inversion symmetric microscopic Hamiltonian we include
the THz field nonperturbatively using non-equilibrium Green function
techniques. We find that a self induced relativistic spin-THz field coupling
locally breaks the inversion symmetry, resulting in the formation of odd
sidebands which otherwise are absent.
