  We present a process for sculpting Bi$_2$Se$_3$ nanoflakes into
application-relevant geometries using a high resolution transmission electron
microscope. This process takes several minutes to sculpt small areas and can be
used to cut the Bi$_2$Se$_3$ into wires and rings, to thin areas of the
Bi$_2$Se$_3$, and to drill circular holes and lines. We determined that this
method allows for sub 10-nm features and results in clean edges along the
drilled regions. Using in-situ high-resolution imaging, selected area
diffraction, and atomic force microscopy, we found that this lithography
process preserves the crystal structure of Bi$_2$Se$_3$. TEM sculpting is more
precise and potentially results in cleaner edges than does ion-beam
modification; therefore, the promise of this method for thermoelectric and
topological devices calls for further study into the transport properties of
such structures.
