  Spin defects in silicon carbide (SiC) have attracted increasing interest due
to their excellent optical and spin properties, which are useful in quantum
information processing. In this paper, we systematically investigate the
temperature dependence of the spin properties of divacancy defects in implanted
4\emph{H}-SiC. The zero-field splitting parameter $D$, the inhomogeneous
dephasing time $T_2^{*}$, the coherence time $T_2$, and the depolarization time
$T_1$ are extensively explored in a temperature range from 5 to 300 K. Two
samples implanted with different nitrogen molecule ion fluences ($\rm
{N_2}^{+}$, $1\times 10^{14}/\rm cm^{2}$ and $1\times 10^{13}/\rm cm^{2}$) are
investigated, whose spin properties are shown to have similar
temperature-dependent behaviors. Still, the sample implanted with a lower ion
fluence has longer $T_{2}$ and $T_{1}$. We provide possible theoretical
explanations for the observed temperature-dependent dynamics. Our work promotes
the understanding of the temperature dependence of spin properties in
solid-state systems, which can be helpful for constructing wide
temperature-range thermometers based on the mature semiconductor material.
