  Presently a lot of efforts are devoted to the investigation of new
two-dimensional magnetic materials, which are considered as promising for the
realization of the future electronics and spintronics devices. However, the
utilization of these materials in different junctions requires complicated
processing that in many cases leads to unwanted parasitic effects influencing
the performance of the junctions. Here, we propose the new elegant approach for
the realization of the "one-material"-based magnetic tunnel junction. The
several layers of 2D van der Waals MnPX3 (X: S, Se), which is insulating
antiferromagnet in its ground state, are used and the effect of the applied
external electric filed leads to the half-metallic ferromagnetic states for the
outermost layers of the MnPX3 stack. The rich states diagram of such magnetic
tunnel junction permits to precisely control its tunneling conductivity. The
realized "one-material"-based magnetic tunnel junction allows to avoid all
effects connected with the lattice mismatches and carriers scattering effects
at the materials interfaces, giving high perspectives for the application of
such systems in electronics and spintronics.
