  In this work, we simulate the expected device performance and the scaling
perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped
source and drain extensions. The simulations are based on the self-consistent
solution of the 3D Poisson-Schroedinger equation with open boundary conditions,
within the Non-Equilibrium Green's Function formalism, where arbitrary gate
geometry and device architecture can be considered. The investigation of short
channel effects for different gate configurations and geometry parameters shows
that double gate devices offer quasi ideal subthreshold slope and DIBL without
extremely thin gate dielectrics. Exploration of devices with parallel CNTs show
that On currents per unit width can be significantly larger than the silicon
counterpart, while high-frequency performance is very promising.
