  GaMnAs thin films with different Mn doping concentrations were grown via
molecular beam epitaxy using a substrate temperature of 250 {\deg}C. The thin
films were investigated using photoluminescence (PL) measurements from 8 to 300
K. Transitions involving Mn acceptors were identified and a binding energy of
~0.1 eV was found. A Mn doping concentration dependent PL spectrum was found to
lend insight into the film quality at a local level. Temperature dependent PL
studies show that the doping related emissions drop faster in energy than other
peaks with increasing temperature, indicating that they are more sensitive to
changes in the surrounding environment.
