  We have carried out an ultrahigh-field cyclotron resonance study of p-type
In1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAs
by low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 T
were used to make cyclotron resonance observable in these low-mobility samples.
The clear observation of hole cyclotron resonance is direct evidence of the
existence of a large number of itinerant, effective-mass-type holes rather than
localized d-like holes. It further suggests that the p-d exchange mechanism is
more favorable than the double exchange mechanism in this narrow gap InAs-based
dilute magnetic semiconductor. In addition to the fundamental heavy-hole and
light-hole cyclotron resonance absorption appearing near the
high-magnetic-field quantum limit, we observed many inter-Landau-level
absorption bands whose transition probabilities are stronglydependent on the
sense of circular polarization of the incident light.
