  We report room-temperature Coulomb blockade in a single layer graphene
three-terminal single-electron transistor (SET) fabricated using
feedback-controlled electroburning. The small separation between the side gate
electrode and the graphene quantum dot results in a gate coupling up to 3 times
larger compared to the value found for the back gate electrode. This allows for
an effective tuning between the conductive and Coulomb blocked state using a
small side gate voltage of about 1V. The technique can potentially be used in
the future to fabricate all-graphene based room temperature single-electron
transistors or three terminal single molecule transistors with enhanced gate
coupling.
