  The inherent network of nanopores and voids in silicon dioxide (SiO2) is
generally undesirable for aspects of film quality, electrical insulation and
dielectric performance. However, if we view these pores as natural
nano-patterns embedded in a dielectric matrix then that opens up new vistas for
exploration. The nano-pattern platform can be used to tailor electrical,
optical, magnetic and mechanical properties of the carrier film. In this
article we report the tunable electrical properties of thermal SiO2 thin-film
achieved through utilization of the metal-nanopore network where the pores are
filled with metallic Titanium (Ti). Without any intentional chemical doping, we
have shown that the electrical resistivity of the oxide film can be controlled
through physical filling up of the intrinsic oxide nanopores with Ti. The
electrical resistance of the composite film remains constant even after
complete removal of the metal from the film surface except the pores. Careful
morphological, electrical and structural analyses are carried out to establish
that the presence of Ti in the nanopores play a crucial role in the observed
conductive nature of the nanoporous film.
