  Strain engineering is one of the key technologies for using graphene as an
electronic device: the strain-induced pseudo-gauge field reflects Dirac
electrons, thus opening the so-called conduction gap. Since strain accumulates
in constrictions, graphene nanoconstrictions can be a good platform for this
technology. On the other hand, in the graphene nanoconstrictions, Fabry-Perot
type quantum interference dominates the electrical conduction at low bias
voltages. We argue that these two effects have different strain dependence; the
pseudo-gauge field contribution is symmetric with respect to positive (tensile)
and negative (compressive) strain, whereas the quantum interference is
antisymmetric. As a result, a peculiar strain dependence of the conductance
appears even at room temperatures.
