  By limiting the carbon segregation at the copper surface defects, a pulsed
chemical vapor deposition method for single layer graphene growth is shown to
inhibit the formation of few-layer regions, leading to a fully single-layered
graphene homogeneous at the centimeter scale. Graphene field-effect devices
obtained after transfer of pulsed grown graphene on oxidized silicon exhibit
mobilities above 5000 cm^2.V^-1.s^-1.
