  As-grown AgF2 has a remarkably similar electronic structure as insulating
cuprates, but it is extremely electronegative, which makes it hard to handle
and dope. Furthermore, buckling of layers reduces magnetic interactions and
enhances unwanted self-trapping lattice effects. We argue that epitaxial
engineering can solve all these problems. By using a high throughput approach
and first principle computations, we find a set of candidate substrates which
can sustain the chemical aggressiveness of AgF2 and at the same time have good
lattice parameter matching for heteroepitaxy, enhancing AgF2 magnetic and
transport properties and opening the possibility of field-effect carrier
injection to achieve a new generation of high-Tc superconductors. Assuming a
magnetic mechanism and extrapolating from cuprates we predict that the
superconducting critical temperature of a single layer can reach 195 K.
