  This paper presents a physics-based modeling framework for the analysis and
transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic
Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the
stochastic behavior of MTJs and to generate Verilog-A compact models for their
simulation in large VLSI designs, addressing the need for an industry-ready
model accounting for real-world reliability and scalability requirements.
Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky
(s-LLGS ) stochastic magnetization considering Voltage-Controlled Magnetic
Anisotropy (VCMA) and the non-negligible statistical effects caused by thermal
noise. Model behavior is validated against the OOMMF magnetic simulator and its
performance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memory
product.
