  We use a single-channel scattering formalism to derive general expressions
for the Andreev bound-state energies and resulting current--phase relationship
in a one-dimensional semiconductor-based SNS-junction, including arbitrarily
oriented effective spin--orbit and Zeeman fields and taking into account
disorder in the junction in by including a single scatterer with transmission
probability $0 \leq T^2 \leq 1$, arbitrarily located in the normal region. We
first corroborate our results by comparing them to the known analytic
limiting-case expressions. Then we simplify our general result in several
additional limits, including the case of the scatterer being at a specific
location and the cases of small and large spin--orbit fields compared to the
Zeeman splitting, assuming low transparency ($T\ll 1$). We believe that our
results could be helpful for disentangling the main spin-mixing processes in
experiments on low-dimensional semiconductor-based SNS-junctions.
