  We report low-temperature transport studies of parallel double quantum dots
formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular
patterns of Coulomb diamonds are observed in the charge stability diagrams,
which we ascribe to single-hole tunneling through a quantum dot in the GaSb
core. As the gate voltage increases, the measured charge stability diagram
indicates the appearance of an additional quantum dot, which we suggest is an
electron quantum dot formed in the InAsSb shell. We find that an electron-hole
interaction induces shifts of transport resonances in the source-drain voltage
from which an average electron-hole interaction strength of 2.9 meV is
extracted. We also carry out magnetotransport measurements of a hole quantum
dot in the GaSb core and extract level-dependent g- factors and a spin-orbit
interaction.
