  We report the development of indium oxide (In2O3) transistors via a single
step laser-induced photochemical conversion process of a sol-gel metal oxide
precursor. Through careful optimization of the laser annealing conditions we
demonstrated successful conversion of the precursor to In2O3 and its subsequent
implementation in n-channel transistors with electron mobility up to 13 cm2/Vs.
Importantly, the process does not require thermal annealing making it
compatible with temperature sensitive materials such as plastic. On the other
hand, the spatial conversion/densification of the sol-gel layer eliminates
additional process steps associated with semiconductor patterning and hence
significantly reduces fabrication complexity and cost. Our work demonstrates
unambiguously that laser-induced photochemical conversion of sol-gel metal
oxide precursors can be rapid and compatible with large-area electronics
manufacturing.
