  The quantum anomalous Hall effect (QAHE) has been recently demonstrated in
Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures
below 100 mK. In those materials, the spins of unfilled d-electrons in the
transition metal dopants are exchange coupled to develop a long-range
ferromagnetic order, which is essential for realizing QAHE. However, the
addition of random dopants does not only introduce excess charge carriers that
require readjusting the Bi/Sb ratio, but also unavoidably introduces
paramagnetic spins that can adversely affect the chiral edge transport in QAHE.
In this work, we show a heterostructure approach to independently tune the
electronic and magnetic properties of the topological surface states in
(BixSb1-x)2Te3 without resorting to random doping of transition metal elements.
In heterostructures consisting of a thin (BixSb1-x)2Te3 TI film and yttrium
iron garnet (YIG), a high Curie temperature (~ 550 K) magnetic insulator, we
find that the TI surface in contact with YIG becomes ferromagnetic via
proximity coupling which is revealed by the anomalous Hall effect (AHE). The
Curie temperature of the magnetized TI surface ranges from 20 to 150 K but is
uncorrelated with the Bi fraction x in (BixSb1-x)2Te3. In contrast, as x is
varied, the AHE resistivity scales with the longitudinal resistivity. In this
approach, we decouple the electronic properties from the induced ferromagnetism
in TI. The independent optimization provides a pathway for realizing QAHE at
higher temperatures, which is important for novel spintronic device
applications.
