  Thermally-treating amorphous indium-oxide films is used in various basic
studies as a means of tuning the system disorder. In this process the
resistance of a given sample decreases while its amorphous structure and
chemical composition is preserved. The main effect of the process is an
increase in the system density which in turn leads to improved interatomic
overlap which is easily detected as improved conductivity. A similar effect has
been observed in studies of other amorphous systems that were subjected to
pressure. In the current work we show that the Raman spectra of amorphous
indium-oxide change in response to thermal-treatment in a similar way as in
pressure experiments performed on other disordered and amorphous systems. We
present a study of how thermal-treatment changes the system dynamics by
monitoring the resistance versus time of indium-oxide films following various
stages of thermal-treatment. The time dependence of the sample resistance fits
the stretched exponential law with parameters that change systematically with
further annealing. Implication of these results to slow dynamics phenomena that
are governed by the Kohlrausch's law are discussed.
