  Modeling semicoherent metal-metal interfaces has so far been performed using
atomistic simulations based on semiempirical interatomic potentials. We
demonstrate through more precise ab-initio calculations that key conclusions
drawn from previous studies do not conform with the new results which show that
single point defects do not delocalize near the interfacial plane, but remain
compact. We give a simple qualitative explanation for the difference in
predicted results that can be traced back to shortcomings in potential fitting.
