  We present a joint theoretical and experimental investigation of charge
doping and electronic potential landscapes in hybrid structures composed of
graphene and semiconducting single layer MoS2. From first-principles
simulations we find electron doping of graphene due to the presence of rhenium
impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge
reordering and a potential shift in graphene, which can be controlled through
external gate voltages. The interplay of edge and impurity effects allows the
use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved
photocurrent signals can be used to resolve potential gradients and local
doping levels in the sample.
