  Transport data on Bi, MoGe, and PbBi/Ge homogeneously-disordered thin films
demonstrate that the critical resistivity, $R_c$, at the nominal
insulator-superconductor transition is linearly proportional to the normal
sheet resistance, $R_N$. In addition, the critical magnetic field scales
linearly with the superconducting energy gap and is well-approximated by
$H_{c2}$. Because $R_N$ is determined at high temperatures and $H_{c2}$ is the
pair-breaking field, the two immediate consequences are: 1)
electron-quasiparticles populate the insulating side of the transition and 2)
standard phase-only models are incapable of describing the destruction of the
superconducting state. As gapless electronic excitations populate the
insulating state, the universality class is no longer the 3D XY model. The lack
of a unique critical resistance in homogeneously disordered films can be
understood in this context. In light of the recent experiments which observe an
intervening metallic state separating the insulator from the superconductor in
homogeneously disordered MoGe thin films, we argue that the two transitions
that accompany the destruction of superconductivity are 1) superconductor to
Bose metal in which phase coherence is lost and 2) Bose metal to localized
electron insulator via pair-breaking.
