  A dense phase of GaAs wires forms in the early stages of strained growth on
GaP,assembling from elongated Stranski-Krastanow islands.
  The electron diffraction during growth is consistent with long, faceted GaAs
islands that are anisotropically deformed without dislocations. The lateral
wire period and long shapes are not predicted by published models, though we
conclude that the island orientation is picked out by facet energy
inequivalencies not present in the analogous system of Ge islands on Si.
