  We present a realization of quantized charge pumping. A lateral quantum dot
is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface
acoustic wave whose wavelength is twice the dot length is used to pump single
electrons through the dot at a frequency f=3GHz. The pumped current shows a
regular pattern of quantization at values I=nef over a range of gate voltage
and wave amplitude settings. The observed values of n, the number of electrons
transported per wave cycle, are determined by the number of electronic states
in the quantum dot brought into resonance with the fermi level of the electron
reservoirs during the pumping cycle.
