  We employ few-femtosecond extreme ultraviolet (XUV) transient absorption
spectroscopy to reveal simultaneously the intra- and interband carrier
relaxation and the light-induced structural dynamics in nanoscale thin films of
layered 2H-MoTe$_{2}$ semiconductor. By interrogating the valence electronic
structure via localized Te 4$\textit{d}$ (39-46 eV) and Mo 4$\textit{p}$ (35-38
eV) core levels, the relaxation of the photoexcited hole distribution is
directly observed in real time. We obtain hole thermalization and cooling times
of 15$\pm$5 fs and 380$\pm$90 fs, respectively, and an electron-hole
recombination time of 1.5$\pm$0.1 ps. Furthermore, excitations of coherent
out-of-plane A$_{1g}$ (5.1 THz) and in-plane E$_{1g}$ (3.7 THz) lattice
vibrations are visualized through oscillations in the XUV absorption spectra.
By comparison to Bethe-Salpeter equation simulations, the spectral changes are
mapped to real-space excited-state displacements of the lattice along the
dominant A$_{1g}$ coordinate. By directly and simultaneously probing the
excited carrier distribution dynamics and accompanying femtosecond lattice
displacement in 2H-MoTe$_{2}$ within a single experiment, our work provides a
benchmark for understanding the interplay between electronic and structural
dynamics in photoexcited nanomaterials.
