  Electrolyte gating is a powerful means for tuning the carrier density and
exploring the resultant modulation of novel properties on solid surfaces.
However, the mechanism, especially its effect on the oxygen migration and
electrostatic charging at the oxide heterostructures, is still unclear. Here we
explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3
(STO) crystals and LaAlO3 (LAO) overlayer through the measurements of
electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence
(PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and
irreversibly after gating due to oxygen electromigration at the amorphous
LAO/STO interface, resulting in a reconstruction of its interfacial band
structure. Because of the filling of Ovac, the amorphous interface also showed
an enhanced electron mobility and quantum oscillation of the conductance.
Further, the filling effect could be controlled by the degree of the
crystallinity of the LAO overlayer by varying the growth temperatures. Our
results reveal the different effects induced by electrolyte gating, providing
further clues to understand the mechanism of electrolyte gating on buried
interfaces and also opening a new avenue for constructing high-mobility oxide
interfaces.
