  In2S3(1-x)O3x is known from preceding studies to have a bandgap varying
continuously as a function of x, the reason why this solid solution is
potentially interesting in the field of photovoltaics. In this work, we present
results on oxidation of In2S3 by heating in air atmosphere to obtain the
desired material. The oxidation is accompanied by a mass loss due to the
substitution of S by O atoms that is studied by means of thermogravimetric
analysis. It appears that the temperature region in which the oxidation occurs
is strongly dependent on the texture of deposited films. As-grown films
deposited by chemical bath deposition are subjected to nano-oxidation occurring
at lower temperature than oxidation of materials that are characterized by a
better crystallinity and larger crystallite size. X ray diffraction and
scanning electron microscopy (including EDX) were used to get information on
the compounds and the texture of films. The main conclusion of the paper opens
the perspective of practical applications for producing layers for solar cells.
