  Antiferromagnets with zero net magnetic moment, strong anti-interference and
ultrafast switching speed have potential competitiveness in high-density
information storage. Body centered tetragonal antiferromagnet Mn2Au with
opposite spin sub-lattices is a unique metallic material for N\'eel-order
spin-orbit torque (SOT) switching. Here we investigate the SOT switching in
quasi-epitaxial (103), (101) and (204) Mn2Au films prepared by a simple
magnetron sputtering method. We demonstrate current induced antiferromagnetic
moment switching in all the prepared Mn2Au films by a short current pulse at
room temperature, whereas different orientated films exhibit distinguished
switching characters. A direction-independent reversible switching is attained
in Mn2Au (103) films due to negligible magnetocrystalline anisotropy energy,
while for Mn2Au (101) and (204) films, the switching is invertible with the
current applied along the in-plane easy axis and its vertical axis, but becomes
attenuated seriously during initially switching circles when the current is
applied along hard axis, because of the existence of magnetocrystalline
anisotropy energy. Besides the fundamental significance, the strong orientation
dependent SOT switching, which was not realized irrespective of ferromagnet and
antiferromagnet, provides versatility for spintronics.
