  The transfer of graphene grown by chemical vapor deposition (CVD) using
amorphous polymers represents a widely implemented method for graphene-based
electronic device fabrication. However, the most commonly used polymer,
poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits
the mobility. Here we report a method for graphene transfer and patterning that
employs a perfluoropolymer---Hyflon---as a transfer handle and to protect
graphene against contamination from photoresists or other polymers. CVD-grown
graphene transferred this way onto LaAlO$_3$/SrTiO$_3$ heterostructures is
atomically clean, with high mobility (~30,000 cm$^2$V$^{-1}$s$^{-1}$) near the
Dirac point at 2 K and clear, quantized Hall and magneto-resistance. Local
control of the LaAlO$_3$/SrTiO$_3$ interfacial metal-insulator
transition---through the graphene---is preserved with this transfer method. The
use of perfluoropolymers such as Hyflon with CVD-grown graphene and other 2D
materials can readily be implemented with other polymers or photoresists.
