  Carbon nanostructures technology has recently emerged as a key enabler for
next-generation optoelectronic devices including deep UV detectors and light
sources which is promising in health and environment monitoring. Here, we
report the fabrication of solution processed Carbon nano-dots (CNDs)/n-Si
heterojunction showing broadband spectral response with a peak responsivity of
~ 1.25 A/W in UV (~300 nm) wavelength. The surface topography and chemical
information of synthesized CNDs via a facile synthesis route have been
characterized showing the presence of surface chemical states resulting broad
optical emission. The CNDs/n-Si photo diodes exhibit very low dark current
(~500 pA), excellent rectification ratio (~5*10^3), and very good
photo-modulation in UV region. Given the solution-processing capability of the
devices and extraordinary optical properties of CNDs, the use of CNDs will open
up unique opportunities for future high-performance, low-cost DUV photo
detectors.
