  Semiconductor dopant profiling using secondary electron imaging in a scanning
electron microscope (SEM) has been developed in recent years. In this paper, we
show that the mechanism behind it also allows mapping of the electric potential
of undoped regions. By using an unbiased GaAs/AlGaAs heterostructure, this
article demonstrates the direct observation of the electrostatic potential
variation inside a 90nm wide undoped GaAs channel surrounded by ionized
dopants. The secondary electron emission intensities are compared with
two-dimensional numerical solutions of the electric potential.
