  We have numerically studied the behavior of one dimensional tunnel junction
arrays when random background charges are included using the ``orthodox''
theory of single electron tunneling. Random background charge distributions are
verified in both amplitude and density. The use of a uniform array as a
transistor is discussed both with and without random background charges. An
analytic expression for the gain near zero gate voltage in a uniform array with
no background charges is derived. The gate modulation with background charges
present is simulated.
