  Antiperovskites, or inverse perovskites, have recently emerged as a material
class with a plethora of promising electronic properties. This perspective
describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites
Sr$_3$PbO and Sr$_3$SnO. We show that MBE offers great potential not only in
growing antiperovskites with high structural quality, but also in providing a
means to seamlessly connect with advanced characterization tools, including
x-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED),
reflection high-energy electron diffraction (RHEED), and scanning tunneling
microscopy (STM), to facilitate the analyses of their intrinsic properties. The
initial results point toward the feasibility of atomically controlled
antiperovskite growth, which could open doors to study topological and
correlated electronic states in an electronic environment quite distinct from
what is available in conventional complex oxides.
