  The material dependence of hot electron magnetotransport in a spin-valve
transistor has been theoretically explored. We calculate the parallel and
anti-parallel collector current changing the types and relative spin
orientation of the ferromagnetic layers. The magnetocurrent has been presented
as well. In this calculations, spin dependent self energy effect of hot
electron in ferromagnetic materials has been taken into account. The results
show that the magnetotransport property strongly depends on the combination of
different ferromagnetic metal layers since the hot electron has different
inelastic scattering strength in each material, and the hot electron spin
polarization enters importantly into the magnetocurrent at finite temperatures.
This calculations may suggest the guide for searching the best structural
combination of hot electron magnetoelectronic device such as a spin-valve
transistor.
