  Temperature dependencies for concentration and the Hall mobility of electrons
for the $\textit{n}$-$\text{Ge} \langle \text{Sb}\rangle$ and \linebreak
$\textit{n}$-$\text{Ge} \langle \text{Sb, Au}\rangle$ single crystals
uniaxially deformed along the crystallographic directions [100] and [111] are
obtained on the basis of piezo-Hall effect measurements. A deformation-induced
increase of the Hall mobility of electrons for $\textit{n}$-$\text{Ge} \langle
\text{Sb, Au}\rangle$ single crystals at the uniaxial pressure along the
crystallographic direction [100] has been revealed. A comparison of the
obtained experimental results with the corresponding theoretical calculations
of temperature dependencies of the Hall mobility showed that the obtained
effect occurs at the expense of the reduction probability of electron
scattering on the fluctuational potential. Its amplitude depends on the
tempe\-rature and on the value of the uniaxial pressure. It has also been shown
that an increase of the Hall mobility for the $\textit{n}$-$\text{Ge} \langle
\text{Sb, Au}\rangle$ single crystals uniaxially deformed along the
crystallographic direction [111] with an increasing temperature turns out to be
insignificant and is observed only for the uniaxial pressures $P<0.28$ GPa. A
decrease of the Hall mobility of electrons at the expense of the deformational
redistribution of electrons among the valleys of the germanium conduction band
with different mobility should be taken into account in the present case. The
Hall mobility magnitude for the uniaxially deformed $\textit{n}$-$\text{Ge}
\langle \text{Sb}\rangle$ single crystals is determined only by the mechanisms
of phonon scattering and we have not observed the effect of the growth of the
Hall mobility with an increase of temperature or the magnitude of uniaxial
pressure.
