  Antiferromagnetic spintronics is a promising emerging paradigm to develop
high-performance computing and communications devices. From a theoretical point
of view, it is important to implement simulation tools that can support a
data-driven development of materials having specific properties for particular
applications. Here, we present a study focusing on antiferromagnetic materials
having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya
interaction (IDMI). An analytical theory is developed and benchmarked against
full numerical micromagnetic simulations, describing the main properties of the
ground state in antiferromagnets and how it is possible to estimate the IDMI
from experimental measurements. The effect of the IDMI on the electrical
switching dynamics of the antiferromagnetic element is also analyzed. Our
theoretical results can be used for the design of multi-terminal heavy
metal/antiferromagnet memory devices.
