  Veselago lens focusing in graphene p-n junction is promising for realizations
of new generation electron optics devices. However, the effect of the
strain-induced Aharonov-Bohm interference in a p-n junction has not been
discussed before. We provide an experimentally feasible setup based on the
Veselago lens in which the presence of strain can result in both the
valley-dependent Lorentz force and Aharonov-Bohm interference. In particular,
by employing the Green's function and tight binding methods, we study the
strain induced by dislocations and line defects in a p-n junction and show how
the resulting Aharonov-Bohm phase and interference can be detected.
Furthermore, for a different strain configuration, e.g. corresponding to
corrugated graphene, we find strong signatures of valley splitting induced by
the fictitious magnetic field. Our proposal can be useful for mapping elastic
deformations and defects, and for studying valley dependent effects in
graphene.
