  The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have
so far been difficult to disentangle from the excitons that dominate the
optical response of this material. Here, we use time- and angle-resolved
photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to
directly measure the excited free carriers. This allows us to ascertain a
direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs)
extraction of excited free carriers via the metal in contact with the SL
MoS$_2$. This process is of key importance for optoelectronic applications that
rely on separated free carriers rather than excitons.
