  Hall effect based magnetic field sensors are vector sensors which are
sensitive to the perpendicular component of the magnetic field. Typically,
Si-based Hall sensors are used for most usages requiring low field sensitivity.
For higher sensitivity, III-V semiconductors such as GaAs, InSb, etc., provide
better alternatives due to higher carrier mobilities at room temperature. In
this work, Hall sensors based on two-dimensional electron gas (2DEG) at the
heterostructure of InAs/AlSb are fabricated. The 2DEG is about 20 nm below the
surface. Carrier density of 3.2x1016 /m2 and mobility of 1.8 m2/Vs were deduced
via Hall measurements at RT. 1/f-noise analyses were carried out to calculate
the magnetic field resolution of ~1 uT/Hz1/2.
