  We report initial measurements on our firstMoAu Transition Edge Sensors
(TESs). The TESs formed from a bilayer of 40 nm of Mo and 106 nm of Au showed
transition temperatures of about 320 mK, higher than identical TESs with a MoCu
bilayer which is consistent with a reduced electron transmission coefficient
between the bilayer films. We report measurements of thermal conductance in the
200 nm thick silicon nitride SiNx support structures at this temperature, TES
dynamic behaviour and current noise measurements.
