  In a recent paper (J.H. Schon, Ch. Kloc, R.C. Haddon and B. Batlogg, Nature
408 (2000) 549) a large increase in the superconducting critical temperature
was observed in C60 doped with holes by application of a high electric field.
We demonstrate that the measured Tc versus doping curves can be explained by
solving the (four) s-wave Eliashberg equations in the case of a finite,
non-half-filled energy band. In order to reproduce the experimental data, we
assume a Coulomb pseudopotential depending on the filling in a very simple and
plausible way. Reasonable values of the physical parameters involved are
obtained. The application of the same approach to new experimental data (J.H.
Schon, Ch. Kloc and B. Batlogg, Science 293 (2001) 2432) on electric
field-doped, lattice-expanded C60 single crystals (Tc=117 K in the hole-doped
case) gives equally good results and sets a theoretical limit to the linear
increase of Tc at the increase of the lattice spacing.
