  Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on
(001)-oriented LSAT substrates using the pulsed electron-beam deposition
technique. The transport study revealed a temperature driven metal-insulator
transition (MIT) at 95 K for the film with x = 0.67. The films with higher
vanadium concentration (x > 0.67) were metallic, and the electrical resistivity
followed the T^2 law corresponding to a Fermi liquid system. In the insulating
region of x < 0.67, the temperature dependence of electrical resistivity for
the x = 0.5 and 0.33 films can be scaled with the variable range hopping model.
The possible mechanisms behind the observed MIT were discussed, including the
effects of electron correlation, lattice distortion and Anderson localization.
