  We have measured the quantum critical behavior of the plateau-insulator (PI)
transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal
resistivity measured for two different values of the electron density follows
an exponential law, from which we extract critical exponents kappa = 0.54 and
0.58, in good agreement with the value (kappa = 0.57) previously obtained for
an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid
critical exponent. By reversing the direction of the magnetic field we find
that the averaged Hall resistance remains quantized at the plateau value h/e^2
through the PI transition. From the deviations of the Hall resistance from the
quantized value, we obtain the corrections to scaling.
