  Platinum silicide Schottky diodes formed on films of polycrystalline Si doped
by phosphorus are demonstrated to be efficient and manufacturable
CMOS-compatible temperature sensors for microbolometer detectors of radiation.
Thin-film platinum silicide/poly-Si diodes have been produced by a
CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates
simulating the bolometer cells. Layer structure and phase composition of the
original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a
low-temperature process have been studied by means of the scanning transmission
electron microscopy; they have also been explored by means of the
two-wavelength X-ray structural phase analysis and the X-ray photoelectron
spectroscopy. Temperature coefficient of voltage for the forward current of a
single diode is shown to reach the value of about $-$2%/$^{\circ}$C in the
temperature interval from 25 to 50$^{\circ}$C.
