  Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising
technology for the next generation of data storage devices. The main bottleneck
of this technology is the high reversal current density threshold. This
outstanding problem of SOT-MRAM is now solved by using a current density of
constant magnitude and varying flow direction that reduces the reversal current
density threshold by a factor of more than the Gilbert damping coefficient. The
Euler-Lagrange equation for the fastest magnetization reversal path and the
optimal current pulse are derived for an arbitrary magnetic cell. The
theoretical limit of minimal reversal current density and current density for a
GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are
respectively of the order of $10^5$ A/cm$^2$ and $10^6$ A/cm$^2$ far below
$10^7$ A/cm$^2$ and $10^8$ A/cm$^2$ in the conventional strategy. Furthermore,
no external magnetic field is needed for a deterministic reversal in the new
strategy.
