  High-grade MgB2(0001) films were grown on Mg(0001) by means of
ultra-high-vacuum molecular beam epitaxy. Low energy electron diffraction and
x-ray diffraction data indicate that thick films are formed by epitaxially
oriented grains with MgB2 bulk structure. The quality of the films allowed
angle-resolved photoemission and polarization dependent x-ray absorption
measurements. For the first time, we report the band mapping along the Gamma-A
direction and the estimation of the electron-phonon coupling constant l ~ 0.55
for the surface state electrons.
