  We present a comparative study of the (magneto)transport properties,
including Hall effect, of bulk, thin film and nanostructured MnSi. In order to
set our results in relation to published data we extensively characterize our
materials, this way establishing a comparatively good sample quality. Our
analysis reveals that in particular for thin film and nanostructured material,
there are extrinsic and intrinsic contributions to the electronic transport
properties, which by modeling the data we separate out. Finally, we discuss our
Hall effect data of nanostructured MnSi under consideration of the extrinsic
contributions and with respect to the question of the detection of a
topological Hall effect in a skyrmionic phase.
