  The conductance through single-layer graphene (SLG) and AA/AB-stacked bilayer
graphene (BLG) junctions is obtained by taking into account band gap and bias
voltage terms. First, we consider gapped SLG, while in between, they are
connected into pristine BLG. For Fermi energy larger than the interlayer
hopping, the conductance as a function of the bilayer region length $d$ reveals
two different models of anti-resonances with the same period. As a function of
the band gap, with AA-BLG stacking, the results show that the conductance has
the same minima whatever the value of $d$, and for AB-BLG, $d$ remains relevant
such that the system creates a global energy gap. Second, we consider pristine
SLG, and in between, they are connected to gapped-biased BLG. We observe the
appearance of peaks in the conductance profile with different periods and
shapes, and also the presence of Klein tunneling with zero conductance in
contrast to the first configuration. When $ d $ is less than 10, $G(E)$
vanishes and exhibits anti-Klein tunneling as a function of the Fermi energy
$E$. We also investigate the conductance as a function of the bias. For AA-BLG,
the results show antiresonances and diminish for a large value of the bias,
independently of the bilayer region of length. In contrast, the conductance in
AB-BLG has distinct characteristics in that it begins conducting with maxima
for small $E$ and with minima for large $E$.
