  Recently, a new kind of spintronics materials, bipolar magnetic semiconductor
(BMS), has been proposed. The spin polarization of BMS can be conveniently
controlled by a gate voltage, which makes it very attractive in device
engineering. Now, the main challenge is finding more BMS materials. In this
article, we propose that hydrogenated wurtzite SiC nanofilm is a
two-dimensional BMS material. Its BMS character is very robust under the effect
of strain, substrate, or even a strong electric field. The proposed
two-dimensional BMS material paves the way to use this promising new material
in an integrated circuit.
