  Angle resolved photoelectron spectroscopy (ARPES) is extensively used to
characterize the dependence of the electronic structure of graphene on Ir(111)
on the preparation process. ARPES findings reveal that temperature programmed
growth alone or in combination with chemical vapor deposition leads to graphene
displaying sharp electronic bands. The photoemission intensity of the Dirac
cone is monitored as a function of the increasing graphene area. Electronic
features of the moir\'e superstructure present in the system, namely minigaps
and replica bands are examined and used as robust features to evaluate graphene
uniformity. The overall dispersion of the pi-band is analyzed. Finally, by the
variation of photon energy, relative changes of the pi- and sigma-band
intensities are demonstrated.
