  The interaction of Laguerre-Gauusian light at select wavelengths from 690 to
810 nm with a p-type gallium arsenide (GaAs) photocathode photonic device and
the production of photogenerated electrons was investigated. Spin angular
momentum (SAM) and orbital angular momentum (OAM) were generated using linear
or circular polarization and q-plates. The degree of polarization P from the
photogenerated electron signal was measured. At an excitation of 695 nm
($E=1.78$ $eV$), $P_{OAM}=~2.1 \%$, $P_{SAM}=~1.3 \%$ and $P_{SAM, OAM (q=1)}=
~3.4\%$, whereas, at 800 nm ($E=1.55$ $eV$), near bandgap, $P_{OAM}=~-14.7\%$,
$P_{SAM}=~-2.6\%$ and $P_{SAM,OAM (q=1)} = ~4.0\%$.
