  We report the electronic properties of the NdNiO3, prepared at the ambient
oxygen pressure condition. The metal-insulator transition temperature is
observed at 192 K, but the low temperature state is found to be less insulating
compared to the NdNiO3 prepared at high oxygen pressure. The electric
resistivity, Seebeck coefficient and thermal conductivity of the compound show
large hysteresis below the metal-insulator transition. The large value of the
effective mass (m* ~ 8me) in the metallic state indicate the narrow character
of the 3d band. The electric conduction at low temperatures (T = 2 - 20 K) is
governed by the variable range hopping of the charge carriers.
