  Segmented, or slow-wave electrodes have emerged as an index-matching solution
to improve bandwidth of traveling-wave Mach Zehnder and phase modulators on the
thin-film lithium niobate on insulator platform. However, these devices require
the use of a quartz handle or substrate removal, adding cost and additional
processing. In this work, a high-speed dual-output electro-optic intensity
modulator in the thin-film silicon nitride and lithium niobate material system
that uses segmented electrodes for RF and optical index matching is presented.
The device uses a silicon handle and does not require substrate removal. A
silicon handle allows the use of larger wafer sizes to increase yield, and
lends itself to processing in established silicon foundries that may not have
the capability to process a quartz or fused silica wafer. The modulator has an
interaction region of 10 mm, shows a DC half wave voltage of 3.75 V, an
ultra-high extinction ratio of roughly 45 dB consistent with previous work, and
a fiber-to-fiber insertion loss of 7.47 dB with a 95 GHz 3 dB bandwidth.
