  It was recently reported that segregation of Zr to grain boundaries (GB) in
nanocrystalline Cu can lead to the formation of disordered intergranular films
[1,2]. In this study we employ atomistic computer simulations to study how the
formation of these films affects the dislocation nucleation from the GBs. We
found that full disorder of the grain boundary structure leads to the
suppression of dislocation emission and significant increase of the yield
stress. Depending on the solute concentration and heat-treatment, however, a
partial disorder may also occur and this aids dislocation nucleation rather
than suppressing it, resulting in elimination of the strengthening effect.
