  The strain induced pseudo-magnetic field in supported graphene deposited on
top of a nanostructured substrate is investigated by using atomistic
simulations. Step, elongated trench, one dimensional barrier, spherical
bubbles, Gaussian bump and Gaussian depression are considered as support
structures for graphene. From the obtained optimum configurations we found very
strong induced pseudo-magnetic fields which can reach up to $\sim$ 1000\,T due
to the strain-induced deformations in the supported graphene. Different
magnetic confinements with controllable geometries are found by tuning the
pattern of the substrate. The resulting induced magnetic fields for graphene on
top of a step, barrier and trench are calculated. In contrast to the step and
trench the middle part of graphene on top of a barrier has zero pseudo-magnetic
field. This study provides a theoretical background for designing magnetic
structures in graphene by nanostructuring substrates. We found that altering
the radial symmetry of the deformation, changes the six-fold symmetry of the
induced pseudo-magnetic field.
