  We demonstrated an electric field controlled exchange bias (EB) effect
accompanied with unipolar resistive switching behavior in the
Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays
obvious EB in high-resistance-state while negligible EB in
low-resistance-state. Conductive filaments forming and rupture in the NiO layer
but near the Co-NiO interface are considered to play dominant roles in
determining the combined resistive switching and EB phenomena. This work paves
a new way for designing multifunctional and nonvolatile magnetic-electrical
random access memory devices.
