  We report on the current-induced magnetization switching of a three-terminal
perpendicular magnetic tunnel junction by spin-orbit torque and the read-out
using the tunnelling magnetoresistance (TMR) effect. The device is composed of
a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The
magnetization of the bottom FeCoB layer can be switched reproducibly by the
injection of current pulses with density $5\times10^{11}$ A/m$^2$ in the Ta
layer in the presence of an in-plane bias magnetic field, leading to the
full-scale change of the TMR signal. Our work demonstrates the proof of concept
of a perpendicular spin-orbit torque magnetic memory cell.
