  We analyze a single electron transistor composed of two semi-infinite one
dimensional quantum wires and a relatively short segment between them. We
describe each wire section by a Luttinger model, and treat tunneling events in
the sequential approximation when the system's dynamics can be described by a
master equation. We show that the steady state occupation probabilities in the
strongly interacting regime depend only on the energies of the states and
follow a universal form that depends on the source-drain voltage and the
interaction strength.
