  Manipulating strong light-matter interaction in semiconductor microcavities
is crucial for developing high-performance exciton polariton devices with great
potentials in next-generation all-solid state quantum technologies. In this
work, we report surface plasmon enhanced strong exciton-photon interaction in
CH3NH3PbBr3 perovskite nanowires. Characteristic anti-crossing behaviors,
indicating Rabi splitting energy up to ~ 560 meV, are observed near exciton
resonance in hybrid semiconductor-insulator-metallic waveguide cavity at room
temperature. An exciton-photon coupling strength enhancement factor of ~ 1.4
times is evaluated, which is mainly attributed to surface plasmon induced
localized excitation field redistribution. Further, systematic studies on
nanowires and insulator dimension dependence of exciton-photon interaction are
presented. These results provide new avenues to achieve extremely high coupling
strengths and push forward the development of electrically pumped and ultra-low
threshold small lasers.
