  In the context of particle detectors, low-temperature covalent wafer-wafer
bonding allows for integration of high-Z materials as absorbing layers with
readout chips produced in standard CMOS processes. This enables for instance
the fabrication of novel highly efficient X-ray imaging sensors. In order to
investigate the effects of the covalent bonding on the signal generated in such
sensors, wafer-wafer bonded silicon-silicon P-N pad diodes have previously been
produced. The behaviour of these test samples is being investigated with
transient current technique (TCT) measurements. In this paper we present an
overview of the TCT setup as well as a custom sandwich-type sample holder used
for these measurements. A review of the results presented in a previous paper
shows, that the bonded P-N structures show a highly asymmetric depletion
behaviour under reverse bias. IR edge TCT measurements confirm that only the
P-side of the samples is being depleted.
