  In order to use graphene for semiconductor applications, such as transistors
with high on/off ratios, a band gap must be introduced into this otherwise
semimetallic material. A promising method of achieving a band gap is by
introducing nanoscale perforations (antidots) in a periodic pattern, known as a
graphene antidot lattice (GAL). A graphene antidot barrier (GAB) can be made by
introducing a 1D GAL strip in an otherwise pristine sheet of graphene. In this
paper, we will use the Dirac equation (DE) with a spatially varying mass term
to calculate the electronic transport through such structures. Our approach is
much more general than previous attempts to use the Dirac equation to calculate
scattering of Dirac electrons on antidots. The advantage of using the DE is
that the computational time is scale invariant and our method may therefore be
used to calculate properties of arbitrarily large structures. We show that the
results of our Dirac model are in quantitative agreement with tight-binding for
hexagonal antidots with armchair edges. Furthermore, for a wide range of
structures, we verify that a relatively narrow GAB, with only a few antidots in
the unit cell, is sufficient to give rise to a transport gap.
