  The exceptionally high mobility of carriers in graphene is one of its
defining characteristics, especially in view of potential applications.
Therefore it is of both practical and fundamental importance to understand the
mechanisms responsible for limiting the values of mobility. The aim of the
paper is to study theoretically one such mechanism, i.e. scattering on ripples.
The transport properties of rippled graphene are studied using using
single-band tight-binding model. Both the bond-length variation, corresponding
to the vector potential in the effective mass picture, and fluctuating scalar
potential are included in the formalism. The samples are modeled as
self-similar surfaces characterized by the roughness exponent with values
ranging from typical for graphene on SiO$_{2}$ to seen in suspended samples.
The range of calculated resistivities and mobilities overlaps with experiment.
The results presented here support the notion of rippling as one of the factors
limiting the mobility.
