  We developed a spin transport model for a diffusive channel with coupled
localized states that result in an effective increase of spin precession
frequencies and a reduction of spin relaxation times in the system. We apply
this model to Hanle spin precession measurements obtained on monolayer
epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed
measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001)
our analysis shows that the different values for the diffusion coefficient
measured in charge and spin transport measurements in MLEG and the high values
for the spin relaxation time can be explained by the influence of localized
states arising from the buffer layer at the interface between the graphene and
the SiC surface.
