  Monitoring structural changes in ferroelectric thin films during electric
field-induced polarization switching is important for a full microscopic
understanding of the coupled motion of charges, atoms and domain walls. We
combine standard ferroelectric test-cycles with time-resolved x-ray diffraction
to investigate the response of a nanoscale ferroelectric oxide capacitor upon
charging, discharging and switching. Piezoelectric strain develops during the
electronic RC time constant and additionally during structural domain-wall
creep. The complex atomic motion during ferroelectric polarization reversal
starts with a negative piezoelectric response to the charge flow triggered by
voltage pulses. Incomplete screening limits the compressive strain. The
piezoelectric modulation of the unit cell tweaks the energy barrier between the
two polarization states. Domain wall motion is evidenced by a broadening of the
in-plane components of Bragg reflections. Such simultaneous measurements on a
working device elucidate and visualize the complex interplay of charge flow and
structural motion and challenges theoretical modelling.
