  Theoretical calculations in the framework of Kane model have been carried out
in order to elucidate the role of interband mixing in forming the energy
spectrum of two-dimensional carriers, localized in a surface quantum well in
narrow gap semiconductor. Of interest was the mixing between the 2D states and
heavy hole states in the volume of semiconductor. It has been shown that the
interband mixing results in two effects: the broadening of 2D energy levels and
their shift, which are mostly pronounced for semiconductors with high doping
level. The interband mixing has been found to influence mostly the effective
mass of 2D carriers for large their concentration, whereas it slightly changes
the subband distribution in a wide concentration range.
