  This paper is devoted mainly to mathematical aspects of modeling and
simulation of tunnel relaxation of nonequilibrium charged oxide traps located
at/near the interface insulator - conductive channel, for instance in
irradiated MOS devices. The generic form of the tunnel annealing response
function was derived from the rate equation for the charged defect buildup and
annealing as a linear superposition of the responses of different defects with
different time constants. Using this linear response function, a number of
important practical problems are analyzed and discussed. Combined tunnel and
thermal or RICN annealing, power-like temporal relaxation after a single ion
strike into the gate oxide, are described in context of general approach.
