  Antiferromagnetic (AF) spintronics is merit on ultra-high operator speed and
stability in the presence of magnetic field. To fully use the merit, the device
should be pure rather than hybrid with ferromagnet or ferrimagnet. For the
magnetism in the antiferromagnet is canceled by that of different sublattices,
breaking the symmetry in the material can revive the native magnetism, which
can be detected by the magnetoresistance (MR) effect. Achieving noticeable MR
effect in the pure AF device is diffcult but essential for the AF spintronic
applications. Here, we study the tunnel magnetoresistance(TMR) effect in the
Nb/Mn$_2$Au/CdO/Mn$_2$Au/Nb pure AF magnetic tunnel junctions (AF-MTJs) based
on a first-principle scattering theory. Giant TMRs with order of 1000% are
predicted in some symmetric junctions, which is originated from the interfacial
resonance tunneling effect related with the k dependent complex band structures
of CdO and Mn$_2$Au in companion with the enhanced spin polarization of the
interfacial magnetic atoms. The effect of voltage bias and interfacial disorder
such as Oxygen vacancy, Manganese vacancy, and Manganese-Cadmium exchanges at
Mn2Au/CdO interfaces are studied also. Our studies suggest
Nb/Mn$_2$Au/CdO/Mn$_2$Au/Nb AFMTJs promising material for AF spintronic
application, and rocksalt CdO a potential symmetry filtering material for
spintronic applications.
