  In this paper, we present a collection of results focussing on the transport
properties of doped direct-gap inverted-band highly polar III-nitride
semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state,
calculated by using nonlinear quantum kinetic theory based on a non-equilibrium
statistical ensemble formalism (NESEF). In the present paper, these results are
compared with calculations usingMonteCarlo modelling simulations and
experimental measurements. Both n-type and p-type materials, in the presence of
intermediate to high electric fields, are considered for several temperatures
and carrier concentrations.The agreement between the results obtained using
nonlinear quantum kinetic theory, with those ofMonte Carlo calculations and
experimental data is remarkably good, thus satisfactorily validating the NESEF.
