  Ferroelectrics offer a promising materials platform to realize
energy-efficient non-volatile memory technology with the FeFET-based
implementations being one of the most area-efficient ferroelectric memory
architectures. However, the FeFET operation entails a fundamental trade-off
between the read and the program operations. To overcome this trade-off, we
propose in this work, a novel device, Mott-FeFET, that aims to replace the
Silicon channel of the FeFET with VO2- a material that exhibits an electrically
driven insulator-metal phase transition. The Mott-FeFET design, which
demonstrates a (ferroelectric) polarization-dependent threshold voltage,
enables the read current distinguishability (i.e., the ratio of current sensed
when the Mott-FeFET is in state 1 and 0, respectively) to be independent of the
program voltage. This enables the device to be programmed at low voltages
without affecting the ability to sense/read the state of the device. Our work
provides a pathway to realize low-voltage and energy-efficient non-volatile
memory solutions.
