  III-V tunneling field-effect transistors (TFETs) offer great potentials in
future low-power electronics application due to their steep subthreshold slope
and large "on" current. Their 3D quantum transport study using non-equilibrium
Green's function method is computationally very intensive, in particular when
combined with multiband approaches such as the eight-band K.P method. To reduce
the numerical cost, an efficient reduced-order method is developed in this
article and applied to study homojunction InAs and heterojunction GaSb-InAs
nanowire TFETs. Device performances are obtained for various channel widths,
channel lengths, crystal orientations, doping densities, source pocket lengths,
and strain conditions.
