  We report a promising InSiO film that allows simultaneous observation of
sample morphology and Kikuchi patterns in raster scan mode of scanning electron
microscopy. This new experimental observation suggests potential mechanism
beyond existing diffraction theories. We find by simulation that this material
has a novel cylindrically symmetric rotational crystalline structure that can
control the diffraction direction of electrons through a specific rotational
distribution of crystal planes, while being independent of the angle and energy
of incident electrons within a certain range.
