  We report electronic transport measurements on two-dimensional electron gases
in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled
quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak
magnetoresistance oscillations are observed, which indicate short-range
ordering of the potential landscape formed by the charged dots and the strain
fields. The presence of these oscillations coincides with the observation of a
metal-insulator transition, and a maximum in the electron mobility as a
function of the electron density. Within a model based on correlated disorder,
we establish a relation between these effects.
