  By using the real-space Green-Kubo formalism we study numerically the
electron transport properties of low-fluorinated graphene. At low temperatures
the diffuse transport regime is expected to be prevalent, and we found a
pronounced electron-hole asymmetry in electrical conductivity as a result of
quasi-resonant scattering on the localized states. For the finite temperatures
in the variable-range hopping transport regime the interpretation of numerical
results leads to the appearance of local minima and maxima of the resistance
near the energies of the localized states. A comparison with the experimental
measurements of the resistance in graphene samples with various fluorination
degrees is discussed.
