  We report on realization and transport spectroscopy study of single quantum
dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The
nanowires employed are 50-80 nm in diameter and the QDs are defined in the
nanowires between the source and drain contacts on a Si/SiO$_2$ substrate. We
show that highly tunable QD devices can be realized with the MBE-grown InSb
nanowires and the gate-to-dot capacitance extracted in the many-electron
regimes is scaled linearly with the longitudinal dot size, demonstrating that
the devices are of single InSb nanowire QDs even with a longitudinal size of
~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved
and the Land\'e g-factors extracted for the quantum levels from the
magnetotransport measurements are found to be strongly level-dependent and
fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted
from the magnetic field evolutions of a ground state and its neighboring
excited state in an InSb nanowire QD and is on the order of ~300 $\mu$eV. Our
results establish that the MBE-grown InSb nanowires are of high crystal quality
and are promising for the use in constructing novel quantum devices, such as
entangled spin qubits, one-dimensional Wigner crystals and topological quantum
computing devices.
