  Magnetoresistance effects are crucial for understanding the charge/spin
transport as well as propelling the advancement of spintronic applications.
Here we report the coexistence of magnetic moment-dependent (MD) and magnetic
field-driven (FD) unidirectional magnetoresistance (UMR) effects in
CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and
the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR
effect at room temperature, while the interaction between the in-plane magnetic
field and the Rashba effect at the InSb/CdTe interface induces the marked
FD-UMR signal that dominates the high-field region. Moreover, owning to the
different spin transport mechanisms, these two types of nonreciprocal charge
transport show opposite polarities with respect to the magnetic field
direction, which further enable an effective phase modulation of the
angular-dependent magnetoresistance. Besides, the demonstrations of both the
tunable UMR response and two-terminal spin-orbit torque-driven magnetization
switching validate our CoFeB/InSb/CdTe system as a suitable integrated building
block for multifunctional spintronic device design.
