  Strain engineering applied to carbon monosulphide monolayers allows to
control the bandgap, controlling electronic and thermoelectric responses.
Herein, we study the semiconductor-metal phase transition of this layered
material driven by strain control on the basis of first-principles
calculations. We consider uniaxial and biaxial tensile strain and we find a
highly anisotropic electronic and thermoelectonic responses depending on the
direction of the applied strain. Our results indicate that strain-induced
response could be an effective method to control the electronic response and
the thermoelectric performance.
