  In this article, we study the transport properties of
Graphene-Superconductor-Graphene (GSG) heterojunction where the superconducting
region is created in the middle of a graphene sheet, as contrasted to widely
studied transport properties through a Superconductor-Graphene-Superconductor
(SGS) type of Josephson junction. We particularly analyse in detail the
Goos-H\"anchen shift of the electron and the hole at the GS interface in such a
junction, due to normal as well as Andreev reflection, using a transfer
matrix-based approach. Additionally, we evaluate the normalised differential
conductance as a function of bias voltage that characterises the transport
through such junction and point out how they are influenced by Andreev and
normal reflection. In the subsequent parts of the article we demonstrate how
the GH shift for both electron and hole changes with the width of the
superconducting region. The behavior of the differential conductance in such
junctions as a function of the bias voltage in the region, dominated by Andreev
and normal reflection, is also presented and analysed.
