  We have measured electrical transport across epitaxial, nanometer-sized
metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111)
with an STM-tip. The conductance per unit area was found to increase with
decreasing diode area. Indeed, the zero-bias conductance was found to be about
10^4 times larger than expected from downscaling a conventional diode. These
observations are explained by a model, which predicts a narrower barrier for
small diodes and therefore a greatly increased contribution of tunneling to the
electrical transport.
