  The local conductivity in the channel of a thin-film field-effect transistor
is proportional to the charge density induced by the local gate voltage. We
show how this determines the frequency- and position-dependence of the charge
induced in the channel for the case of "zero applied current": zero
drain-source voltage with charge induced by a square-wave voltage applied to
the gate, assuming constant mobility and negligible contact impedances. An
approximate expression for the frequency dependence of the induced charge in
the center of the channel can be conveniently used to determine the charge
mobility. Fits of electro-optic measurements of the induced charge in organic
transistors are used as examples.
