  First-principles investigations of the structural, electronic and magnetic
properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr
segregates into the GaN region, that these interfaces retain their important
half-metallic character and thus yield efficient (100 %) spin polarized
injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier -
whose height and width can be controlled by adjusting the Al concentration in
the graded bandgap engineered Al(1-x)Ga(x)N (0001) layers.
