  Topological semimetal materials have become a research hotspot due to their
intrinsic strong spin-orbit coupling which leads to large charge-to-spin
conversion efficiency and novel transport behaviors. In this work, we have
observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1
in a singlelayer of sputtered semimetal Pt3Sn at room temperature. Different
from previous observations, the value of BMER in sputtered Pt3Sn does not
change out-of-plane due to the polycrystalline nature of Pt3Sn. The observation
of BMER provides strong evidence of the existence of spin-momentum locking in
the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic
layer, the BMER value of this bilayer system is doubled compared to the single
Pt3Sn layer. This work broadens the material system in BMER study, which paves
the way for the characterization of topological states and applications for
spin memory and logic devices.
