  Here, we comprehensively investigate the atomic structures and electronic
properties of different antiphase boundaries in III-V semiconductors with
different orientations and stoichiometries, including {110}, {100}, {111},
{112} and {113} ones, based on first-principle calculations. Especially, we
demonstrate how the ladder or zigzag chemical bond configuration can lead for
the different cases to a gapped semiconducting band structure, to a gapped
metallic band structure or to a non-gapped metallic band structure. Besides, we
evidence that the ladder APB configurations impact more significantly the Fermi
energy levels than the zigzag APB configurations. We finally discuss how these
different band structures can have some consequences on the operation of
monolithic III-V/Si devices for photonics or energy harvesting.
