  Recent research focused on single photon emitters (SPEs) hosted by layered
semiconductors, particularly hexagonal boron nitride (hBN), has revealed a
promising alternative to quantum dots (QDs) for generating single,
indistinguishable photons. hBN-based SPEs offer lower material costs, room
temperature emission, and easy integration into potential optoelectronic
devices due to the layered structure of the host crystal. This work presents
compact hybrid electroluminescence devices, in which GaN laser diodes (LDs) are
used for bottom-to-top excitation of hBN nanoflakes deposited on the laser
facets. Our approach circumvents the issue of electroluminescence generation
from hBN and provides access to the SPE's signal without optical driving by an
external laser. Using laser diodes upgraded with Bragg reflectors a
room-temperature generation of single photons from hBN is confirmed by an
80%-dip in their g(2) second-order correlation. The on-demand emission of
single photons at room temperature is demonstrated by driving the laser diodes
in pulsed operation, with confidence supported by a measured g(2)(0) value of
0.37.
