  Time-resolved Kerr rotation spectroscopy as a function of pump-probe
distance, voltage and magnetic field is used to measure the momentum-dependent
spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples
can be reproducibly controlled in the cryostat using three- and four-point
bending applied with a mechanical vise. We find that the magnitude of the spin
splitting increases linearly with applied tension and voltage. A strain-drift
diffusion model is used to relate the magnitude of the measured spin-orbit
splitting to the amount of strain in the sample.
