  High quality berylium doped InAs layer grown by MBE on GaAs substrate has
been examined via magnetotransport measurements and high resolution
quantitative mobility spectrum analysis in the range from 5 to 300 K and up to
15 T magnetic field. The layer homogenity and dopant concentration has been
proofed via HR-SIMS. The results shew four channel conductivity and essential
splitting of the most populated holelike channel below 55 K. The multilayer
model concluded from the QMSA results has been compared with nextnano
simulation.
