  High-performance, high-volume-manufacturing Si3N4 photonics requires
extremely low waveguide losses augmented with heterogeneously integrated lasers
for applications beyond traditional markets of high-capacity interconnects.
State-of-the-art quality factors (Q) over 200 million at 1550 nm have been
shown previously; however, maintaining high Qs throughout laser fabrication has
not been shown. Here, Si3N4 resonator intrinsic Qs over 100 million are
demonstrated on a fully integrated heterogeneous laser platform. Qi is measured
throughout laser processing steps, showing degradation down to 50 million from
dry etching, metal evaporation, and ion implant steps, and controllable
recovery to over 100 million from annealing at 250C - 350C.
