  Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding
ferroelectric properties, including a high coercive field and high remnant
polarization. Although AlScN-based ferroelectric field-effect transistors
(FETs) for memory applications have been demonstrated, a device for logic
applications with minimal hysteresis has not been reported. This study reports
on the transport characteristics of a MoS$_{2}$ negative capacitance FET
(NCFET) based on an AlScN ferroelectric material. We experimentally demonstrate
the effect of a dielectric layer in the gate stack on the memory window and
subthreshold swing (SS) of the NCFET. We show that the hysteresis behavior of
transfer characteristics in the NCFET can be minimized with the inclusion of a
non-ferroelectric dielectric layer, which fulfills the capacitance-matching
condition. Remarkably, we also observe the NC effect in MoS$_{2}$/AlScN NCFETs
arrays based on large-area monolayer MoS$_{2}$ synthesized by chemical vapor
deposition, showing the SS values smaller than its thermionic limit (~36-60
mV/dec) and minimal variation in threshold voltages (< 20 mV).
