  In this work it is reported a vertical electrolyte transistor (VET) whose
structure is based on stacked layers as described below: bottom contact (source
or drain) - channel - permeable intermediate electrode (drain or source) - ion
gel (electrolyte gate dielectric) - gate top contact. This VET depicts
versatility to work as Electrolyte-Gated Vertical Organic Field Effect
Transistor (Electrolyte-Gated VOFET) or Vertical Organic Electrochemical
Transistor (VOECT) as never reported before. The distinction of these operation
modes is regarding to the transistor transconductance that occurs due to
induced charge carriers or ionic current, respectively. Both modes of operation
show that this VET is able to work at very low voltage range and drive a high
current density. These observed features make VETs a good candidate for
applications in iontronic devices, bio-sensors and/or very low power
optoelectronic circuits.
