  Electrical switching and readout of antiferromagnets allows to exploit the
unique properties of antiferromagnetic materials in nanoscopic electronic
devices. Here we report experiments on the spin-orbit torque induced electrical
switching of a polycrystalline, metallic antiferromagnet with low anisotropy
and high N\'eel temperature. We demonstrate the switching in a Ta / MnN / Pt
trilayer system, deposited by (reactive) magnetron sputtering. The dependence
of switching amplitude, efficiency, and relaxation are studied with respect to
the MnN film thickness, sample temperature, and current density. Our findings
are consistent with a thermal activation model and resemble to a large extent
previous measurements on CuMnAs and Mn$_2$Au, which exhibit similar switching
characteristics due to an intrinsic spin-orbit torque.
