  Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch
has been developed having 2 nanosecond rise time driving a 200 Ohm load with
the potential of approaching 30 MHz average switching rates. Possible
applications include driving particle beam choppers kicking bunch-by-bunch and
beam deflectors where the rise time needs to be custom tailored. This paper
reports on the engineering issues addressed, the design approach taken and some
performance results of this switch.
