  We have presented a compact MOSFET model, which allows us to describe the I-V
characteristics of irradiated long-channel and short-channel transistors in all
operation modes at different measurement temperatures and interface trap
densities. The model allows simulating of the off-state and the on-state drain
currents of irradiated MOSFETs based on an equal footing. Particularly, a novel
compact model of the rebound effect in n-MOSFETs was employed for simulation of
the total dose dependencies of drain currents in the highly scaled 60 nm node
circuits irradiated up to 1Grad. Compatibility of the model parameter set with
BSIM and a single closed form of the model equation imply the possibility of
its easy implementation into the standard CAD tools.
