  In this paper the theory of high-frequency acoustic signal detection by
Schottky diodes is presented. Physically, the detection was found to be due to
the quasi-static screening of the potential perturbation caused by the acoustic
strain by charge carriers. The total charge required for screening changes with
the value of strain at the edge of the semiconductor depletion region and
metal-semiconductor interface giving rise to displacement current. The
magnitude and frequency dependence of the electrical signals are analyzed for
both piezoelectric and deformation potential coupling mechanisms. The obtained
results are in good agreement with the recent experimental observations and
suggest feasibility of high-frequency (up to terahertz band) acoustic wave
detection provided that proper electrical measuring scheme is available.
