  In this research, the effect of Magnesium Fluoride (MgF2) Anti-Reflection
(AR) layer was investigated in quantum dot sensitized solar cells (QDSCs). MgF2
nanoparticles with the dominant size of 20 nm were grown by a thermal
evaporation method and a thin layer was formed on the front side of the
fluorine-doped tin oxide (FTO) substrate. In order to study the effect of the
AR layer on the efficiency of solar cells, this substrate was utilized in CdS
QDSCs. In this conventional structure of QDSC, TiO2 nanocrystals (NCs) were
applied on the FTO substrate, and then it was sensitized with CdS quantum dots
(QDs). According to the results, the QDSCs with MgF2 AR layer represented the
maximum Power Conversion Efficiency (PCE) of 3%. This efficiency was increased
by about 47% compared to the reference cell without the AR layer. The reason is
attributed to the presence of the AR layer and the reduction of incident light
reflected from the surface of the solar cell.
