  Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined
film-fed technique has led to the commercialization of large-area beta-Ga2O3
substrates. Standard epitaxy approaches are being utilized to develop various
thin-film beta-Ga2O3 based devices including lateral transistors. This article
will discuss the challenges for metal organic chemical vapor deposition (MOCVD)
of beta-Ga2O3 and the design criteria for use of this material system in power
electronic device structures.
