  Heteroepitaxial growth of selected group IV-VI nitrides on various
orientations of sapphire (\alpha-Al2O3) is demonstrated using atomic layer
deposition. High quality, epitaxial films are produced at significantly lower
temperatures than required by conventional deposition methods. Characterization
of electrical and superconducting properties of epitaxial films reveals a
reduced room temperature resistivity and increased residual resistance ratio
(RRR) for films deposited on sapphire compared to polycrystalline samples
deposited concurrently on fused quartz substrates.
