  For antiferromagnetically coupled Fe/Cr multilayers the low field
contribution to the resistivity, which is caused by the domain walls, is
strongly enhanced at low temperatures. The low temperature resistivity varies
according to a power law with the exponent about 0.7 to 1. This behavior can
not be explained assuming ballistic electron transport through the domain
walls. It is necessary to invoke the suppression of anti-localization effects
(positive quantum correction to conductivity) by the nonuniform gauge fields
caused by the domain walls.
