  Vanadium based dichalcogenides, VSe$_2$, are two-dimensional materials in
which magnetic Vanadium atoms are arranged in a hexagonal lattice and are
coupled ferromagnetically within the plane. However, adjacent atomic planes are
coupled antiferromagnetically. This provides new and interesting opportunities
for application in spintronics and data storage and processing technologies. A
spin valve magnetoresistance may be achieved when magnetic moments of both
atomic planes are driven to parallel alignment by an external magnetic field.
The resistance change associated with the transition from antiparallel to the
parallel configuration is qualitatively similar to that observed in
artificially layered metallic magnetic structures. Detailed electronic
structure of VSe$_2$ was obtained from DFT calculations. Then, the ballistic
spin-valve magnetoresistance was determined within the Landauer formalism. In
addition, we also analyze thermal and thermoelectric properties. Both phases of
VSe$_2$, denoted as H and T, are considered.
