  Moir\'e flatbands, occurring, e.g., in twisted bilayer graphene at magic
angles, have attracted ample interest due to their high degree of experimental
tunability and the intriguing possibility of generating novel strongly
interacting phases. Here we consider the core problem of Coulomb interactions
within fractionally filled spin and valley polarized Moir\'e flatbands and
demonstrate that the dual description in terms of holes, which acquire a
nontrivial hole dispersion, provides key physical intuition and enables the use
of standard perturbative techniques for this strongly correlated problem. In
experimentally relevant examples such as ABC stacked trilayer and twisted
bilayer graphene aligned with boron nitride, it leads to emergent
interaction-driven Fermi liquid states at electronic filling fractions down to
around $1/3$ and $2/3$ respectively. At even lower filling fractions, the
electron density still faithfully tracks the single-hole dispersion while
exhibiting distinct non-Fermi liquid behavior. Most saliently, we provide
microscopic evidence that high temperature fractional Chern insulators can form
in twisted bilayer graphene aligned with hexagonal boron nitride.
