  The influence of the channel shape in a junctionless silicon-on-insulator
finned field-effect transistor (JL SOI FinFET) on the amplitude of random
telegraph noise (RTN) induced by single interface trapped charge has been
simulated for the transistors with rectangular, trapezoidal, and triangular fin
cross sections. The simulation of the RTN amplitude distribution along the
channel induced by a single charge trapped at interface defect located at the
fin top and at sidewall of JL SOI FinFETs with channels of different shapes is
considered. It is established that at trapping the single charge at sidewall
surface of the channel, the lowest RTN amplitude is seen for the triangular
cross-section and the highest for the rectangular and trapezoidal
cross-sections. At the single charge trapping at the top surface of the
channel, the RTN amplitude is higher for the rectangle than for the trapezoidal
cross-section.
