  We present gate-controlled single, double, and triple dot operation in
electrostatically gapped bilayer graphene. Thanks to the recent advancements in
sample fabrication, which include the encapsulation of bilayer graphene in
hexagonal boron nitride and the use of graphite gates, it has become possible
to electrostatically confine carriers in bilayer graphene and to completely
pinch-off current through quantum dot devices. Here, we discuss the operation
and characterization of electron-hole double dots. We show a remarkable degree
of control of our device, which allows the implementation of two different
gate-defined electron-hole double-dot systems with very similar energy scales.
In the single dot regime, we extract excited state energies and investigate
their evolution in a parallel magnetic field, which is in agreement with a
Zeeman-spin-splitting expected for a g-factor of two.
