  Theoretical calculations and experimental observations show MoTe2 is a type
II Weyl semimetal, along with many members of transition metal dichalcogenides
family. We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2
substrates by chemical vapor deposition. Very uniform, continuous, and smooth
films were obtained as confirmed by scanning electron microscopy and atomic
force microscopy analyses. Measurements of the temperature dependence of
longitudinal resistivity and current-voltage characteristics at different
temperature are discussed. Unsaturated, positive quadratic magnetoresistance of
the as-grown thin films has been observed from 10 K to 200 K. Hall resistivity
measurements confirm the majority charge carriers are hole.
