  In order to provide the best possible performance, modern infrared
photodetector designs necessitate extremely precise modeling of the
superlattice absorber region. We advance the Rode's method for the Boltzmann
transport equation in conjunction with the $\bf k.p$ band structure and the
envelope function approximation for a detailed computation of the carrier
mobility and conductivity of layered type-II superlattice structures, using
which, we unravel two crucial insights. First, the significance of both elastic
and inelastic scattering mechanisms, particularly the influence of the
interface roughness and polar optical phonon scattering mechanisms in
technologically relevant superlattice structures. Second, that the
structure-specific Hall mobility and Hall scattering factor reveals that
temperature and carrier concentrations significantly affect the Hall scattering
factor, which deviates significantly from unity even for small magnetic fields.
This reinforces the caution that should be exercised when employing the Hall
scattering factor in experimental estimations of drift mobilities and carrier
concentrations. Our research hence offers a comprehensive microscopic
understanding of carrier dynamics in such technologically relevant
superlattices. Our models also provide highly accurate and precise transport
parameters beyond the relaxation time approximation and thereby paving the way
to develop physics-based device modules for mid-wavelength infrared
photodetectors.
