  Direct and inverse Auger scattering are amongst the primary processes that
mediate the thermalization of hot carriers in semiconductors. These two
processes involve the annihilation or generation of an electron-hole pair by
exchanging energy with a third carrier, which is either accelerated or
decelerated. Inverse Auger scattering is generally suppressed, as the
decelerated carriers must have excess energies higher than the band gap itself.
In graphene, which is gapless, inverse Auger scattering is instead predicted to
be dominant at the earliest time delays. Here, $<8$ femtosecond
extreme-ultraviolet pulses are used to detect this imbalance, tracking both the
number of excited electrons and their kinetic energy with time- and
angle-resolved photoemission spectroscopy. Over a time window of approximately
25 fs after absorption of the pump pulse, we observe an increase in conduction
band carrier density and a simultaneous decrease of the average carrier kinetic
energy, revealing that relaxation is in fact dominated by inverse Auger
scattering. Measurements of carrier scattering at extreme timescales by
photoemission will serve as a guide to ultrafast control of electronic
properties in solids for PetaHertz electronics.
