  We predict that a novel bias-voltage assisted magnetization reversal process
will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions
with carrier induced ferromagnetism. The effect is due to strong
exchange-coupling induced subband mixing that leads to electrically tunable
hysteresis loops. Our model calculations are based on the mean-field theory of
carrier induced ferromagnetism in Mn-doped quantum wells and on a
semi-phenomenological description of the host II-VI semiconductor valence
bands.
