  We present the results of high-frequency mixing experiments performed upon
parallel quantum point-contacts defined in the two-dimensional electron gas of
an Al_{x}Ga_{1-x}As/GaAs-heterostructure. The parallel geometry, fabricated
using a novel double-resist technology, enables the point-contact device to be
impedance matched over a wide frequency range and, in addition, increases the
power levels of the mixing signal while simultaneously reducing the parasitic
source-drain capacitance. Here, we consider two parallel quantum point-contact
devices with 155 and 110 point-contacts respectively; both devices operated
successfully at liquid helium and liquid nitrogen temperatures with a minimal
conversion loss of 13 dB.
