  Recent research works have shown that the magnetic order in some
antiferromagnetic materials can be manipulated and detected electrically, due
to two physical mechanisms: Neel-order spin-orbit torques and anisotropic
magnetoresistance. While these observations open up opportunities to use
antiferromagnets for magnetic memory devices, different physical
characterization methods are required for a better understanding of those
mechanisms. Here we report a magnetic field induced rotation of the
antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using
soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron
microscopy, integral magnetometry and magneto-transport methods, we demonstrate
spin-flop switching and continuous spin reorientation in antiferromagnetic
films with uniaxial and biaxial magnetic anisotropies, respectively. From
field-dependent measurements of the magnetization and magnetoresistance, we
obtain key material parameters including the anisotropic magnetoresistance
coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.
