  A remarkable several times increase (up to 10 K) of the superconducting
critical temperature Tc has been observed in point contacts created on the base
of single crystals AFe$_2$As$_2$ (A = K, Cs, Rb). Possible reasons for such a
Tc increase in point contacts are briefly discussed on a qualitative level.
Among them, it is most likely attributed to interfacial carrier doping and/or
uniaxial non-homogeneous pressure arising when the contact is created.
