  The critical current response to an applied out-of-plane magnetic field in a
Josephson junction provides insight into the uniformity of its current
distribution. In Josephson junctions with semiconducting weak links, the
carrier density and, therefore the overall current distribution could be
modified electrostatically via metallic gates. Here, we show local control of
the current distribution in an epitaxial Al-InAs Josephson junction equipped
with five mini-gates. We demonstrate that not only can the junction width be
electrostatically defined but also we can locally adjust the current profile to
form superconducting quantum interference devices. Our studies show enhanced
edge conduction in such long junctions, which can be eliminated by mini-gates
to create a uniform current distribution.
