  The measurements of the high - temperature current - voltage characteristics
of MoS2 thin - film transistors show that the devices remain functional to
temperatures of at least as high as 500 K. The temperature increase results in
decreased threshold voltage and mobility. The comparison of the DC and pulse
measurements shows that the DC sub - linear and super - linear output
characteristics of MoS2 thin - films devices result from the Joule heating and
the interplay of the threshold voltage and mobility temperature dependences. At
temperatures above 450 K, an intriguing phenomenon of the "memory step" - a
kink in the drain current - occurs at zero gate voltage irrespective of the
threshold voltage value. The memory step effect was attributed to the slow
relaxation processes in thin films similar to those in graphene and electron
glasses. The obtained results suggest new applications for MoS2 thin - film
transistors in extreme - temperature electronics and sensors.
