  Our study demonstrates that strong cationic segregation can occur in
amorphous complex oxide memristors during electrical operation. With the help
of analytic techniques, we observed that switching the electrical stimulation
from voltage to current significantly prevents structural changes and cation
segregation at the nanoscale, improving also the device cycle-to-cycle
variability. These findings could contribute to the design of more reliable
oxide-based memristors and underscore the crucial effect that has the type of
electrical stimulation applied to the devices on their integrity and
reliability.
