  We present a traveling wave model for a semiconductor diode laser based on
quantum wells. The gain model is carefully derived from first principles and
implemented with as few phenomeno- logical constants as possible. The
transverse energies of the quantum well confined electrons are discretized to
automatically capture the effects of spectral and spatial hole burning, gain
asym- metry, and the linewidth enhancement factor. We apply this model to
semiconductor optical amplifiers and single-section phase-locked lasers. We are
able to reproduce the experimental re- sults. The calculated frequency
modulated comb shows potential to be a compact, chip-scale comb source without
additional external components.
