  The high-frequency conductivity of Si delta-doped GaAs/AlGaAs
heterostructures is studied in the integer quantum Hall effect (QHE) regime,
using acoustic methods. Both the real and the imaginary parts of the complex
conductivity are determined from the experimentally observed magnetic field and
temperature dependences of the velocity and the attenuation of a surface
acoustic wave. It is demonstrated that in the structures studied the mechanism
of low-temperature conductance near the QHE plateau centers is hopping. It is
also shown that at magnetic fields corresponding to filling factors 2 and 4,
the doped Si delta- layer efficiently shunts the conductance in the
two-dimensional electron gas (2DEG) channel. A method to separate the two
contributions to the real part of the conductivity is developed, and the
localization length in the 2DEG channel is estimated.
