  We calculate the temperature, density, and parallel magnetic field dependence
of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum
structures, assuming the conductivity limiting mechanism to be carrier
scattering by screened random charged Coulombic impurity centers. We obtain
comprehensive agreement with existing experimental transport data, compellingly
establishing that the observed 2D metallic behavior in low-density Si/SiGe
systems arises from the peculiar nature of 2D screening of long-range impurity
disorder. In particular, our theory correctly predicts the experimentally
observed metallic temperature dependence of 2D resistivity in the fully
spin-polarized system.
