  Two-dimensional materials are considered for future quantum devices and are
usually produced by extensive methods like molecular beam epitaxy. We report on
the fabrication of field-effect transistors using individual ultra-thin lead
sulfide nanostructures with lateral dimensions in the micrometer range and a
height of a few nanometers as conductive channel produced by a comparatively
fast, inexpensive, and scalable colloidal chemistry approach. Contacted with
gold electrodes, such devices exhibit p-type behavior and temperature-dependent
photoconductivity. Trap states play a crucial role in the conduction mechanism.
The performance of the transistors is among the ones of the best devices based
on colloidal nanostructures.
