  Diluted Magnetic Semiconductors (DMS) doped with a small concentration of
magnetic impurities inducing ferromagnetic DMSs have attracted a lot of
attention in the few last years. In particular, DMS based on III-V and II-VI
semiconductors doped with transition metal are deeply investigated by both
theoretical and experimental scientists for their promoting applications in
spintronics. In this work, we present the magnetic properties of doped Mn ions
in semi-conductor for different carrier's concentration. For the case of
Zn1-xMnxO, the results of our calculations, dealt within Monte Carlo study
using a Heisenberg Hamiltonian based on the RKKY interaction, show well
converged MC data based on this Hamiltonian for different carrier
concentrations.
