  We report on "graphene-like" mechanical exfoliation of thin films of titanium
ditelluride and investigation of their electronic properties. The exfoliated
crystalline TiTe2 films were used as the channel layers in the back-gated
field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si
substrates. The room-temperature current-voltage characteristics revealed
strongly non-linear behavior with signatures of the source-drain threshold
voltage similar to those observed in the charge-density-wave devices. The
drain-current showed an unusual non-monotonic dependence on the gate bias
characterized by the presence of multiple peaks. The obtained results can be
potentially used for implementation of the non-Boolean logic gates.
