  This work presents the design of beta-Ga2O3 schottky barrier diode using
high-k dielectric superjunction to significantly enhance the breakdown voltage
vs on-resistance trade-off beyond its already high unipolar figure of merit.
The device parameters are optimized using both TCAD simulations and analytical
modeling using conformal mapping technique. The dielectric superjunction
structure is found to be highly sensitive to the device dimensions and the
dielectric constant of the insulator. The aspect ratio, which is the ratio of
the length to the width of the drift region, is found to be the most important
parameter in designing the structure and the proposed approach only works for
aspect ratio much greater than one. The width of the dielectric layer and the
dielectric constant also plays a crucial role in improving the device
properties and are optimized to achieve maximum figure of merit. Using the
optimized structure with an aspect ratio of 10 and a dielectric constant of
300, the structure is predicted to surpass the b-Ga2O3 unipolar figure of merit
by four times indicating the promise of such structures for exceptional FOM
vertical power electronics.
