  We have investigated the electronic structure of the $p$-type diluted
magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn
3$d$ partial density of states is found to be basically similar to that of
  Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of
the valence band have not been observed by angle-resolved photoemission
spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the
difference in transport, magnetic and optical properties of
  In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic
structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in
In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.
