  Two-dimensional materials have been discovered to exhibit non-volatile
resistive switching (NVRS) phenomenon. In our work, we reported the universal
NVRS behavior in a dozen metal dichalcogenides, featuring low switching
voltage, large on/off ratio, fast switching speed and forming free
characteristics. A unique conductive-point random access memory (CPRAM) effect
is used to explain the switching mechanisms, supported by experimental results
from current-sweep measurements.
