  We present the design and test results of a 4-channel 10-Gbps/ch
Vertical-Cavity Surface-Emitting Laser array driver, the cpVLAD. With on-chip
charge-pumps to extend the biasing headroom for the VCSELs needed for low
temperature operation and mitigation of the radiation effects. The cpVLAD was
fabricated in a 65-nm CMOS technology. The test results show that the cpVLAD is
capable of driving VCSELs with forward bias voltages as high as 2.8 V from a
2.5 V power supply. The power consumption of the cpVLAD is 94 mW/ch.
