  The passivation by diffusing H2 of silicon dangling bond defects (E' centers,
induced by laser irradiation in amorphous SiO_2 (silica), is investigated in
situ at several temperatures. It is found that the reaction between E' center
and H_2 requires an activation energy of 0.38eV, and that its kinetics is not
diffusion-limited. The results are compared with previous findings on the other
fundamental paramagnetic point defect in silica, the non bridging oxygen hole
center, which features completely different reaction properties with H_2.
Besides, a comparison is proposed with literature data on the reaction
properties of surface E' centers, of E' centers embedded in silica films, and
with theoretical calculations. In particular, the close agreement with the
reaction properties of surface E' centers with H_2 leads to conclude that the
bulk and surface E' varieties are indistinguishable from their reaction
properties with molecular hydrogen.
