  We demonstrate the extensive study on how film density and crystallinity of
molybdenum carbide ($MoC_{x}$) can be tailored during plasma-enhanced ALD
(PEALD) by controlling either the plasma exposure time or the ion energy. We
investigated $MoC_{x}$ films grown using $Mo(^tBuN)_2(NMe_2)_2$ as the
precursor and $H_2/Ar$ plasma as the co-reactant at temperatures between
150{\deg}C and 300{\deg}C. We discover a threshold for graphitic layer
formation at high mean ion energies during the PEALD cycle. The supplied high
energy dose allows for hybridised $sp^{2}$ carbon bonds formation, similar to
high temperature annealing. The graphitisation of the $MoC_{x}$ surface takes
place at temperature of 300$^{\circ}C$. The graphitic film show a (101) plane
diffraction peak with dominant intensity in XRD, and a typical $sp^{2}$ C1s
peak along with carbidic metal in XPS measurements. Surface roughness of the
film lowers significantly at the graphitisation regime of deposition. This low
temperature graphitisation by high energy plasma ions during PEALD shows a
great promise to advancing graphene and graphite composites at low temperature
by PEALD for future applications.
