  Magnons, bosonic quasiparticles carrying angular momentum, can flow through
insulators for information transmission with minimal power dissipation.
However, it remains challenging to develop a magnon-based logic due to the lack
of efficient electrical manipulation of magnon transport. Here we present a
magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet
structure, where multiferroic magnon modes can be electrically excited and
controlled. In this device, magnon information is encoded to ferromagnetic bits
by the magnon-mediated spin torque. We show that the ferroelectric polarization
can electrically modulate the magnon spin-torque by controlling the
non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin
films with coupled antiferromagnetic and ferroelectric orders. By manipulating
the two coupled non-volatile state variables (ferroelectric polarization and
magnetization), we further demonstrate reconfigurable logic-in-memory
operations in a single device. Our findings highlight the potential of
multiferroics for controlling magnon information transport and offer a pathway
towards room-temperature voltage-controlled, low-power, scalable magnonics for
in-memory computing.
