  Self-aligned single-dot memory devices and arrays were fabricated based on
arsenic-assisted etching and oxidation effects. The resulting device has a
floating gate of about 5-10 nm, presenting single-electron memory operation at
room temperature. In order to realize the final single-electron memory circuit,
this paper investigates process repeatability, device uniformity in single-dot
memory arrays, device scalability, and process transferability to an industrial
application.
