  We prepared single unit cell FeSe films on GaO$_{2-\delta}$ terminated
perovskite NdGaO$_{3}$(110) substrates and performed ex situ transport and
scanning transmission electron microscopy measurements on the FeTe protected
films. Our experimental measurements showed that the single unit cell FeSe
films interfaced with GaO$_{2-{\delta}}$ layer are electron doped via interface
charge transfer. Most importantly, this type of heterostructure can host
interface enhanced superconductivity with an onset temperature of about 28 K,
which is much higher than the value of 8 K in bulk FeSe. Our work indicates
that FeSe/GaO$_{2-{\delta}}$can be a comparative platform with the
FeSe/TiO$_{2-{\delta}}$ family for understanding the mechanism of interface
enhanced high temperature superconductivity.
