  We report the fabrication of self-assembled, strain-free
GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in
the growth plane, utilizing the droplet epitaxy technique and the anisotropic
surface potentials of the GaAs (100) surface for the migration of Ga adatoms.
Photoluminescence spectra from a single quantum dot pair, consisting of a
doublet, have been observed. Finite element energy level calculations of a
model quantum dot pair are also presented.
