  Using non-perturbative theoretical method, we address the problem of strong
correlations in twisted bilayer-layer graphene at the magic angle. We
concentrate on the solution without symmetry breaking, where conventional Mott
insulating state is expected for all integer fillings. At Coulomb repulsion
corresponding to dielectric constant $\varepsilon\approx 5$ and several integer
fillings we find a Mott-semiconducting state, which simultaneously hosts the
Mott state, and inside the Mott gap, a second much smaller semiconduting gap.
The presence of these Mott-ingap states, which are located at the $\Gamma$
point, makes the Mott state strongly temperature dependent and leads to a
bad-metal phase at elevated temperatures. The system is insulating at the
charge neutrality point and at even fillings away from it.
