  The thermoelectric transport coefficients of electrons in two recently
emerged transition metal dichalcogenides(TMD), MoS2 and WSe2, are calculated by
solving Boltzmann Transport equation and coupled electrical and thermal current
equations using Rode iterative technique. Scattering from localized donor
impurities, acoustic deformation potential, longitudinal optical (LO) phonons,
and substrate induced remote phonon modes are taken into account. Hybridization
of TMD plasmon with remote phonon modes is investigated. Dynamic screening
under linear polarization response is explored in TMDs sitting on a dielectric
environment and the screened electron-phonon coupling matrix elements are
calculated. The effect of screening and substrate induced remote phonon
mediated scattering on the transport coefficients of the mentioned materials is
explained. The transport coefficients are obtained for a varying range of
temperature and doping density for three different types of substrates SiO2,
Al2O3, and HfO2. The thermoelectric properties of interest including Seebeck
coefficient, Peltier coefficient, and electronic thermal conductivity are
calculated.
