  Spin injection in metallic normal/ferromagnetic junctions is investigated
taking into account the anisotropic magnetoresistance (AMR) occurring in the
ferromagnetic layer. It is shown, on the basis of a generalized two channel
model, that there is an interface resistance contribution due to anisotropic
scattering, beyond spin accumulation and giant magnetoresistance (GMR). The
corresponding expression of the thermopower is derived and compared with the
expression for the thermopower produced by the GMR. First measurements of
anisotropic magnetothermopower are presented in electrodeposited Ni nanowires
contacted with Ni, Au and Cu. The results of this study show that while the
giant magnetoresistance and corresponding thermopower demonstrates the role of
spin-flip scattering, the observed anisotropic magnetothermopower indicates
interband s-d relaxation mechanisms.
