  This paper presents a brief review of scanning-gate microscopy applied to the
imaging of electron transport in buried semiconductor quantum structures. After
an introduction to the technique and to some of its practical issues, we
summarise a selection of its successful achievements found in the literature,
including our own research. The latter focuses on the imaging of GaInAs-based
quantum rings both in the low magnetic field Aharonov-Bohm regime and in the
high-field quantum Hall regime. Based on our own experience, we then discuss in
detail some of the limitations of scanning-gate microscopy. These include
possible tip induced artefacts, effects of a large bias applied to the scanning
tip, as well as consequences of unwanted charge traps on the conductance maps.
We emphasize how special care must be paid in interpreting these scanning-gate
images.
