  We report a detailed analysis of the electrical resistivity exponent of thin
films of NdNiO3 as a function of epitaxial strain. Strain-free thin-films show
a linear dependence of the resistivity vs temperature, consistent with a
classical Fermi gas ruled by electron-phonon interactions. In addition, the
apparent temperature exponent, n, can be tuned with the epitaxial strain
between n= 1 and n= 3. We discuss the critical role played by quenched random
disorder in the value of n. Our work shows that the assignment of
Fermi/Non-Fermi liquid behaviour based on experimentally obtained resistivity
exponents requires an in-depth analysis of the degree of disorder in the
material.
