  Chemical vapor deposition-based growth techniques allow flexible design of
CMOS-compatible materials. Here, we report the deuterated silicon-rich nitride
films grown using plasma-enhanced chemical vapor deposition. The linear and
nonlinear properties of the films are characterized. We compare the absorption
at 1550nm wavelength region for films grown with $SiH_4$ and $SiD_4$, and
experimentally confirm that the silicon-rich nitride films grown with $SiD_4$
eliminates Si-H related absorption. Waveguides fabricated on the films are
further shown to possess a linear and nonlinear refractive index of 2.46 and
$9.8$ X $10^{-18} m^2 W^{-1}$ respectively.
