  We present a new ferromagnetic resonance (FMR) method that we term the Ferris
FMR. It is wideband, has significantly higher sensitivity as compared to
conventional FMR systems, and measures the absorption line rather than its
derivative. It is based on large-amplitude modulation of the externally applied
magnetic field that effectively magnifies signatures of the spin-transfer
torque making its measurement possible even at the wafer-level. Using the
Ferris FMR, we report on the generation of spin currents from the orbital Hall
effect taking place in pure Cu and Al. To this end, we use the spin-orbit
coupling of a thin Pt layer introduced at the interface that converts the
orbital current to a measurable spin current. While Cu reveals a large
effective spin Hall angle exceeding that of Pt, Al possesses an orbital Hall
effect of opposite polarity in agreement with the theoretical predictions. Our
results demonstrate additional spin- and orbit- functionality for two important
metals in the semiconductor industry beyond their primary use as interconnects
with all the advantages in power, scaling, and cost.
