  The excellent material properties of diamond make it highly desirable for
many extreme electronic applications that are out of reach of conventional
electronic materials. For commercial diamond devices to become a reality, it is
necessary to have an effective surface passivation since the passivation
determines the ability of the device to withstand high surface electric fields.
In this paper we present data from lateral Time-of-Flight studies on
SiO2-passivated intrinsic single-crystalline CVD diamond. The SiO2 films were
deposited using three different techniques. The influence of the passivation on
hole transport was studied, which resulted in the increase of hole mobilities.
The results from the three different passivations are compared.
