  In the last several years considerable efforts have been devoted to
developing Bose-Einstein Condensate (BEC)-based devices for applications such
as fundamental research, precision measurements and integrated atom optics.
Such devices capable of complex functionality can be designed from simpler
building blocks as is done in microelectronics. One of the most important
components of microelectronics is a transistor. We demonstrate that
Bose-Einstein condensate in a three well potential structure where the
tunneling of atoms between two wells is controlled by the population in the
third, shows behavior similar to that of an electronic field effect transistor.
Namely, it exhibits switching and both absolute and differential gain. The role
of quantum fluctuations is analyzed, estimates of switching time and parameters
for the potential are presented.
