  Recent progress in superconductor electronics fabrication has enabled
single-flux-quantum (SFQ) digital circuits with close to one million Josephson
junctions (JJs) on 1-cm$^2$ chips. Increasing the integration scale further is
challenging because of the large area of SFQ logic cells, mainly determined by
the area of resistively shunted Nb/AlO$_x$-Al/Nb JJs and geometrical inductors
utilizing multiple layers of Nb. To overcome these challenges, we are
developing a fabrication process with self-shunted high-J$_c$ JJs and compact
thin-film MoN$_x$ kinetic inductors instead of geometrical inductors.
  We present fabrication details and properties of MoN$_x$ films with a wide
range of T$_c$, including residual stress, electrical resistivity, critical
current, and magnetic field penetration depth {\lambda}$_0$. As kinetic
inductors, we implemented Mo$_2$N films with T$_c$ about 8 K, {\lambda}$_0$
about 0.51 {\mu}m, and inductance adjustable in the range from 2 to 8 pH/sq.
  We also present data on fabrication and electrical characterization of
Nb-based self-shunted JJs with AlO$_x$ tunnel barriers and J$_c$ = 0.6
mA/{\mu}m$^2$, and with 10-nm thick Si$_{1-x}$Nb$_x$ barriers, with x from 0.03
to 0.15, fabricated on 200-mm wafers by co-sputtering. We demonstrate that the
electron transport mechanism in Si$_{1-x}$Nb$_x$ barriers at x < 0.08 is
inelastic resonant tunneling via chains of multiple localized states. At larger
x, their Josephson characteristics are strongly dependent on x and residual
stress in Nb electrodes, and in general are inferior to AlO$_x$ tunnel
barriers.
