  We investigate bilayer graphene systems with layer switching domain walls
separating the two energetically equivalent Bernal stackings in the presence of
an external magnetic field. To this end we calculate quantum transport and
local densities of three microscopic models for a single domain wall: a hard
wall, a defect due to shear, and a defect due to tension. The quantum transport
calculations are performed with a recursive Green's function method.
Technically, we discuss an explicit algorithm for the separation of a system
into subsystems for the recursion and we present an optimization of the well
known iteration scheme for lead self-energies for sparse chain couplings. We
find strong physical differences for the three different types of domain walls
in the integer quantum Hall regime. For a domain wall due to shearing of the
upper graphene layer there is a plateau formation in the magnetoconductance for
sufficiently wide defect regions. For wide domain walls due to tension in the
upper graphene layer there is only an approximate plateau formation with
fluctuations of the order of the elementary conuctance quantum $\sigma_0$. A
direct transition between stacking regions like for the hard wall domain wall
shows no plateau formation and is therefore not a good model for either of the
previously mentioned extended domain walls.
