  We investigate the effect of the laser parameters of pulsed laser deposition
on the film stoichiometry and electronic properties of LaAlO_3/SrTiO_3 (001)
heterostructures. The La/Al ratio in the LaAlO_3 films was varied over a wide
range from 0.88 to 1.15, and was found to have a strong effect on the interface
conductivity. In particular, the carrier density is modulated over more than
two orders of magnitude. The film lattice expansion, caused by cation
vacancies, is found to be the important functional parameter. These results can
be understood to arise from the variations in the electrostatic boundary
conditions, and their resolution, with stoichiometry.
