  We propose a spin transistor using only non-magnetic materials that exploits
the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric
quantum wells. We show that extremely large spin splittings due to BIA are
possible in (110) InAs/GaSb/AlSb heterostructures, which together with the
enhanced spin decay times in (110) quantum wells demonstrates the potential for
exploitation of BIA effects in semiconductor spintronics devices. Spin
injection and detection is achieved using spin-dependent resonant interband
tunneling and spin transistor action is realized through control of the
electron spin lifetime in an InAs lateral transport channel using an applied
electric field (Rashba effect). This device may also be used as a spin valve,
or a magnetic field sensor. The electronic structure and spin relaxation times
for the spin transistor proposed here are calculated using a nonperturbative
14-band k.p nanostructure model.
