  In this manuscript we demonstrate experimentally that a thin film of MoS2
monolayers formed by drop-casting on a gold interdigitated electrode on Si/SiO2
behaves like a complementary memristive device, which is a key device of future
crossbar memories. The hysteretic behavior of this device is modulated by light
in a spectral range expanding from UV up to IR. In contrast to previous
complementary memristive devices based on complicated oxides heterostructures,
this device has a simple fabrication procedure and can be controlled by light,
in addition to electrical signals.
