  p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic
semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The
strong interaction between the localized Mn spins and the holes deeply modifies
the transport properties (metal-insulator transition, spin-dependent Hall
effect). In spite of the weak localization of the carriers at low temperature,
the holes clearly induce a ferromagnetic interaction between the localized
spins, which is discussed as a function of Mn content and hole concentration.
