  The high-throughput (HT) computational method is a useful tool to screen high
performance functional materials. In this work, using the deformation potential
method under the single band model, we evaluate the carrier relaxation time and
establish an electrical descriptor (\c{hi}) characterized by the carrier
effective masses based on the simple rigid band approximation. The descriptor
(\c{hi}) can be used to reasonably represent the maximum power factor without
solving the electron Boltzmann transport equation. Additionally, the
Gr\"uneisen parameter ({\gamma}), a descriptor of the lattice anharmonicity and
lattice thermal conductivity, is efficiently evaluated using the elastic
properties, omitting the costly phonon calculations. Applying two descriptors
(\c{hi} and {\gamma}) to binary chalcogenides, we HT compute 243 semiconductors
and screen 50 promising thermoelectric materials. For these theoretically
determined compounds, we successfully predict some previously experimentally
and theoretically investigated promising thermoelectric materials.
Additionally, 9 p-type and 14 n-type previously unreported binary chalcogenides
are also predicted as promising thermoelectric materials. Our work provides not
only new thermoelectric candidates with perfect crystalline structure for the
future investigations, but also reliable descriptors to HT screen high
performance thermoelectric materials.
