  We study spin-valley and lattice-pseudo spin currents in a dual
ferromagnetic-gated silicene-based junction. Silicene has buckled atomic
structure which allows us to take sublattice-dependent ferromagnetism into
account in the investigation. One of the study results show that transmission
at the junctions exhibits anisotropic property only in anti-parallel cases.
Interestingly, the studied junctions can be switched from a pure spin-polarizer
to a pure valley-polarizer by reversing directions of exchange fields in the
parallel junctions. The perfect control of spin-valley currents can be done
only in the parallel cases and its resolution can be enhanced by increasing
gate potential between the ferromagnetic barriers. The asymmetric barriers of
anti-parallel junction is found to destroy both spin and valley filtering
effects and yield a novel result, pure sub-lattice pseudo-spin polarization.
The current in the anti-parallel junctions can be controlled to flow solely in
either A or B sub-lattice, saying that the controllable lattice current in
silicene is created in double ferromagnetic-gated junction. Our work reveals
the potential of dual ferromagnetic-gated silicene junction which may be
possible for applications in spin-valleytronics and lattice-pseudospintronics.
