  The influence of SiC-impurity layer and growth temperature on microstructure
and superconducting properties were studied for MgB2 superconducting tapes. The
pulsed laser deposition (PLD) system was used for the deposition of amorphous
SiC-impurity layers on the flexible metallic Cu (001) tapes. The MgB2
superconducting tapes were fabricated by growing MgB2 films on the top of
SiC/Cu tapes over a wide temperature range of 460 - 600 {\deg}C by using hybrid
physical-chemical vapor deposition (HPCVD) system. Among all tapes, the
MgB2/SiC/Cu tape deposited at a temperature of 540 {\deg}C has the highest Tc
of ~ 37.7 K. Scanning electron microscopy (SEM) images revealed the hexagonal
shaped MgB2 grains with good connectivity, and their sizes were found to vary
with growth temperatures. As compared to MgB2/Cu tapes, the MgB2/SiC/Cu tapes
exhibited opposite trend in the dependence of critical current density (Jc)
with deposition temperatures. The improved Jc (H) behavior could be explained
on the basis of the enhanced flux pinning force density (Fp) for MgB2/SiC/Cu
tapes upon increasing growth temperature.
