  The electronic properties of shallow acceptors in p-doped GaAs{110} are
investigated with scanning tunneling microscopy at low temperature. Shallow
acceptors are known to exhibit distinct triangular contrasts in STM images for
certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to
identify their energetic origin and behavior. A crucial parameter - the STM
tip's work function - is determined experimentally. The voltage dependent
potential configuration and band bending situation is derived. Ways to validate
the calculations with the experiment are discussed. Differential conductivity
maps reveal that the triangular contrasts are only observed with a depletion
layer present under the STM tip. The tunnel process leading to the anisotropic
contrasts calls for electrons to tunnel through vacuum gap and a finite region
in the semiconductor.
