  To extend the Moores law in the 5 nm node, a large number of two dimensional
(2D) materials and devices have been thoroughly researched, among which the
cold metals 2H MS2 (M = Nb, Ta) with unique band structures are expected to
achieve the sub-60 mV/dec subthreshold swing (SS). The studied cold metal
field-effect transistors (CM-FETs) based on the cold metals are capable to
fulfill the high-performance (HP) and low-dissipation (LP) goals
simultaneously, as required by the International Technology Roadmap for
Semiconductors (ITRS). Moreover, gaps of cold metals also enable the CM-FETs to
realize negative differential resistance (NDR) effect. Owing to the wide
transmission path in the broken gap structure of NbS2/MoS2 heterojunction, the
recording 4110 A/m peak current, several orders of magnitude higher than the
tunneling current of the Esaki diode, is achieved by NbS2/MoS2 CM-FET. The
largest peak-valley ratio (PVR) is obtained by TaS2/MoS2 CM-FET with VGS = -1V
at room temperature. Our results claim that the superior on-state current, SS,
cut-off frequency and NDR effect can be obtained by CM-FETs simultaneously. The
study of CM-FETs provides a practicable solution for state-of-the-art logic
device in sub 5 nm node for both more Moore roadmap and more than Moore roadmap
applications.
