  We have built an electron-phonon coupling model to describe the behavior of
the NbxSi1-x transition edge sensor (TES) bolometers, fabricated by
electron-beam coevaporation and photolithography techniques on a 2-inch silicon
wafer. The resistance versus temperature curves of several sensors with
different thickness are measured with different bias currents, ranging from 200
nA to 10 micro A, and the electron-phonon coupling coefficient and the
electron-phonon thermal conductance are calculated herein. Our values are quite
comparable with those in metallic TES samples of other groups using different
measurement methods, while we are using the transition region of our TES sample
to calculate the electron-phonon coupling interaction.
