  We have studied the magnetotransport properties of a high mobility
two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with
densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the
zero-field 'metal-insulator transition' (MIT). In a parallel field well above
B_c that suppresses the metallic conductivity, the 2DHG exhibits a conductivity
g(T)~0.3(e^2/h)lnT reminiscent of weak localization. The experiments are
consistent with the coexistence of two phases in our system: a metallic phase
and a weakly insulating Fermi liquid phase having a percolation threshold close
to B_c.
