  We address the fabrication of nano-architectures by impacting thin layers of
amorphous Ge deposited on SiO$_{2}$ with a Ga$^{+}$ ion beam and investigate
the structural and optical properties of the resulting patterns. By adjusting
beam current and scanning parameters, different classes of nano-architectures
can be formed, from elongated and periodic structures to disordered ones with a
footprint of a few tens of nm. The latter disordered case features a
significant suppression of large length scale fluctuations that are
conventionally observed in ordered systems and exhibits a nearly hyperuniform
character, as shown by the analysis of the spectral density at small wave
vectors. It deviates from conventional random fields as accounted for by the
analysis of Minkowski functionals. A proof of concept for potential
applications is given by showing peculiar reflection properties of the
resulting nano-structured films that exhibit colorization and enhanced light
absorption with respect to the flat Ge layer counterpart (up to one order of
magnitude at some wavelength). This fabrication method for disordered
hyperuniform structures does not depend on the beam size. Being ion beam
technology widely adopted in semiconductor foundries over 200 mm wafers, our
work provides a viable pathway for obtaining disordered, nearly-hyperuniform
materials by self-assembly with a footprint of tens of nanometers for
electronic and photonic devices, energy storage and sensing.
