  Mie resonances due to scattering/absorption of light in InN containing
clusters of metallic In may have been erroneously interpreted as the infrared
band gap absorption in tens of papers. Here we show by direct thermally
detected optical absorption measurements that the true band gap of InN is
markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence
studies complemented by imaging of metallic In have shown that bright infrared
emission at 0.7-0.8 eV arises from In aggregates, and is likely associated with
surface states at the metal/InN interfaces.
