  Superconductor based quantum computing has the major drawback of working
temperatures which require liquid helium for cooling. A promising approach to
overcome this obstacle for quantum technologies is based on deep level defects
in semiconductors, with the nitrogen vacancy (NV) center in diamond being the
most prominent example. Unfortunately, diamond in sufficient quality is scarce,
which motivated efforts to find similar defects in silicon carbide (SiC). So
far, many reports focus on investigations of point defects in irradiated 3C-SiC
and as grown material. However, the investigated defects are more or less a
product of coincidence for both. While in irradiated material the intentional
generation of specific defects is rather challenging, in as purchased material
the defects are actually more an unintentional by product of growth and process
conditions. This work proposes a new route: the incorporation and control of
deep level defects in 3C-SiC by epitaxial sublimation growth. The observed
defects in the near infrared show bright luminescence in the 175 K/200 K regime
and remain excitable up to 300 K. This could enable working temperatures above
the cryogenic limit. The joint origin of all detected defects is assigned to
the carbon vacancy.
