  Single crystals of the new compound CeCu0.18Al0.24Si1.58 have been grown by
high-temperature solution growth method using a eutectic Al-Si mixture as flux.
This compound is derived from the binary CeSi2 (tetragonal ThSi2-type, Pearson
symbol tI12, space group I41/amd) obtained by partial substitution of Si by Cu
and Al atoms but showing full occupation of the Si crystal site (8e). While
CeSi2 is a well-known valence-fluctuating paramagnetic compound, the
CeCu0.18Al0.24Si1.58 phase orders ferromagnetically at TC = 9.3 K. At low
temperatures the easy-axis of magnetization is along the a-axis, which
re-orients itself along the c-axis above 30 K. The presence of hysteresis in
the magnetization curve, negative temperature coefficient of resistivity at
high temperatures, reduced jump in the heat capacity and a relatively lower
entropy released up to the ordering temperature, and enhanced Sommerfeld
coefficient (~100 mJ/mol K2) show that CeCu0.18Al0.24Si1.58 is a Kondo lattice
ferromagnetic, moderate heavy fermion compound. Analysis of the high
temperature heat capacity data in the paramagnetic region lets us infer that
the crystal electric field split doublet levels are located at 178 and 357 K,
respectively, and Kondo temperature (8.4 K) is of the order of TC in
CeCu0.18Al0.24Si1.58.
