  We investigate nanoscale local anodic oxidation (LAO) on
hydrogen-intercalated graphene grown by controlled sublimation of silicon
carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and
characterization tool in order to investigate the local properties of the
nanofabricated structures. The anomalous thickness observed after the graphene
oxidation process is linked to the impact of LAO on the substrate. Micro-Raman
spectroscopy was employed to demonstrate the presence of two oxidation regimes
depending on the applied bias. We show that partial and total etching of
monolayer graphene can be achieved by tuning the bias voltage during LAO.
Finally, a complete compositional characterization was achieved by scanning
electron microscopy and energy dispersive spectroscopy (EDS).
