  Half-metallic Co-based full Heusler alloys have captured considerable
attention of the researchers in the realm of spintronic applications, owing to
their remarkable characteristics such as exceptionally high spin polarization
at Fermi level, ultra-low Gilbert damping, and high Curie temperature. In this
comprehensive study, employing density functional theory, we delve into the
stability and electron transport properties of a magnetic tunneling junction
(MTJ) comprising a Co$_2$MnSb/HfIrSb interface. Utilizing a standard model
given by Julliere, we estimate the tunnel magnetoresistance (TMR) ratio of this
heterojunction under external electric field, revealing a significantly high
TMR ratio (500%) that remains almost unaltered for electric field magnitudes up
to 0.5 V/A. In-depth investigation of K-dependent majority spin transmissions
uncovers the occurrence of coherent tunneling for the Mn-Mn/Ir interface,
particularly when a spacer layer beyond a certain thickness is employed.
Additionally, we explore the impact of bi-axial strain on the MTJ by varying
the in-plane lattice constants between -4% and +4%. Our spin-dependent
transmission calculations demonstrate that the Mn-Mn/Ir interface manifests
strain-sensitive transmission properties under both compressive and tensile
strain, and yields a remarkable three-fold increase in majority spin
transmission under tensile strain conditions. These compelling outcomes place
the Co2MnSb/HfIrSb junction among the highly promising candidates for nanoscale
spintronic devices, emphasizing the potential significance of the system in the
advancement of the field.
