  Analytical theory of the high-power passively mode-locked laser with a slow
absorber is developed. In distinguishing from previous treatment, our model is
valid at pulse energies well exceeding the saturation energy of absorber. This
is achieved by solving the mode-locking master equation in the pulse
energy-domain representation. The performances of monolithic sub-picosecond
blue-violet GaN mode-locked diode laser in the high-power operation regime are
analyzed using the developed approach.
