  We propose a two terminal nanomagnetic memory element based on magnetization
reversal of a perpendicularly magnetized nanomagnet employing a unipolar
voltage pulse that modifies the perpendicular anisotropy of the system. Our
work demonstrates that the presence of Dzyaloshinskii-Moriya Interaction (DMI)
can create alternative route for magnetization reversal that obviates the need
for utilizing precessional magnetization dynamics as well as a bias magnetic
field that are employed in traditional voltage control of magnetic anisotropy
(VCMA) based switching of perpendicular magnetization. We show with extensive
micromagnetic simulation, in the presence of thermal noise, that the proposed
skyrmion mediated VCMA switching mechanism is robust at room temperature
leading to extremely low error switching while also being potentially 1-2
orders of magnitude more energy efficient than state of the art spin transfer
torque (STT) based switching.
