  Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are
grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional
topological insulator (TI), showed good chemical and structural compatibility
with In2Se3, a normal band insulator with large energy bandgap. The individual
layers in the SLs are very uniform and the hetero-interfaces are sharp.
Therefore, such SL structures are potential candidates for explorations of the
quantum size effects of TIs.
