  Antiferromagnetic (AFM) materials are a pathway to spintronic memory and
computing devices with unprecedented speed, energy efficiency, and bit density.
Realizing this potential requires AFM devices with simultaneous electrical
writing and reading of information, which are also compatible with established
silicon-based manufacturing. Recent experiments have shown tunneling
magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However,
these TMR structures were not grown using a silicon-compatible deposition
process, and controlling their AFM order required external magnetic fields.
Here we show three-terminal AFM tunnel junctions based on the noncollinear
antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously
exhibit electrical switching using electric currents, and electrical readout by
a large room-temperature TMR effect. First-principles calculations explain the
TMR in terms of the momentum-resolved spin-dependent tunneling conduction in
tunnel junctions with noncollinear AFM electrodes.
