  In this work we study the self-heating (1) effect (SHE) in nanoscale Silicon
on Insulator Junctionless (SOI JL) FinFET transistor with fi cross section in
rectangular, trapeze and triangle form. The lattice temperature dependence on
the channel length as well as on buried oxide thickness is considered. It is
shown that for considered transistor structure the lattice temperature in the
middle of the channel is lower than at lateral sides, near source and drain.
Also, we have found at the same conditions the lattice temperature depends on
shape of channel cross section too
