  Quasi-two-dimensional (quasi-2D) materials hold promise for future
electronics because of their unique band structures that result in electronic
and mechanical properties sensitive to crystal strains in all three dimensions.
Quantifying crystal strain is a prerequisite to correlating it with the
performance of the device, and calls for high resolution but spatially resolved
rapid characterization methods. Here we show that using fly-scan nano X-ray
diffraction we can accomplish a tensile strain sensitivity below 0.001% with a
spatial resolution of better than 80 nm over a spatial extent of 100 $\mu$m on
quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a
$\sim$ 100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam
across and rotating the sample. We demonstrate that the strain distribution
around micron and sub-micron sized 'bubbles' that are present in the sample may
be reconstructed from these images. The experiments use state of the art
synchrotron instrumentation, and will allow rapid and non-intrusive strain
mapping of thin film samples and electronic devices based on quasi 2D
materials.
