  Here, we describe the prototype for precisely scaled temperature assisted
magnetic recording scheme utilizing the characteristics of thermo-remnant
magnetization (TRM) in bulk SmCrO$_3$ as a memory media. The TRM response can
be exploited in completely reversible bipolar switching performances either by
tuning the temperature only across a sharp thermal window $\Delta T_w$ = 10 K,
or annealing isothermally with a single pulse of field $\ge$ 0.1 T by flipping
the direction of magnetization from 0$^o$ to 180$^o$. The microscopic mechanism
of TRM in SmCrO$_3$ is explored by means of diffuse scattering using high
energy $\lambda = 0.4997\AA$ neutrons and thermal variation of coercivity in
$T_N \pm \Delta T$ range. It is noticed that the huge heterogeneity reflected
by the estimated average spin-spin correlation length of the fluctuations in
microscopic spin configuration being $\le$ 90 $\AA$ and efficient domain wall
pinning effect as the defect dimensions are approximately twice to the domain
wall width, governs the peculiar characteristic of TRM in SmCrO$_3$.
