  It is well known that Anderson transition is a disorder-induced
metal-insulator transition.Contrary to this conventional wisdom, some
investigations have shown that disorders could destroy the phase coherence of
localized modes in flatbands, making the localized states melt into extended
states. This phenomenon is called the inverse Anderson transition. While, to
date, the experimental observation of inverse Anderson transitions is still
lacking. In this work, we report the implementation of inverse Anderson
transitions based on Aharonov-Bohm topolectrical circuits. Different types of
disorders, including symmetric-correlated, antisymmetric-correlated and
uncorrelated disorders, can be easily implemented in Aharonov-Bohm circuits by
engineering the spatial distribution of ground settings. Through the direct
measurements of frequency-dependent impedance responses and time-domain voltage
dynamics, the inverse Anderson transitions induced by antisymmetric-correlated
disorders are clearly observed. Moreover, the flat bands and associated spatial
localizations are also fulfilled in clean Aharonov-Bohm circuits or
Aharonov-Bohm circuits sustaining symmetric-correlated and uncorrelated
disorders, respectively. Our proposal provides a flexible platform to
investigate the interplay between the geometric localization and Anderson
localization, and could have potential applications in electronic signal
control.
