  We investigated low-frequency current fluctuations, i.e. electronic noise, in
FePS3 van der Waals, layered antiferromagnetic semiconductor. The noise
measurements have been used as noise spectroscopy for advanced materials
characterization of the charge carrier dynamics affected by spin ordering and
trapping states. Owing to the high resistivity of the material, we conducted
measurements on vertical device configuration. The measured noise spectra
reveal pronounced Lorentzian peaks of two different origins. One peak is
observed only near the Neel temperature and it is attributed to the
corresponding magnetic phase transition. The second Lorentzian peak, visible in
the entire measured temperature range, has the characteristics of the
trap-assisted generation-recombination processes similar to those in
conventional semiconductors but shows a clear effect of the spin order
reconfiguration near the Neel temperature. The obtained results contribute to
understanding the electron and spin dynamics in this type of antiferromagnetic
semiconductors and demonstrate the potential of electronic noise spectroscopy
for advanced materials characterization.
