  In this work, we investigate the electronic and optical properties of the
b-AsP quantum dots(QDs) and quantum rings(QRs) with different edge types in the
presence of an in-plane electric field and a perpendicular magnetic field
utilizing the tight-binding method. Our calculations show that the electronic
and optical properties of edge states largely depend on the edge types. By
adjusting the intensity of the electric field or magnetic field, the
probability density can be effectively tuned. In particular, under an in-plane
electric field, novel edge states emerge in rhombus QDs and QRs with {\delta}
atoms, and transitions happen between these novel edge states and bulk states
in the conduction band region, which is illustrated by distinct and evenly
separated peaks in the optical absorption spectra. This work might exploit a
potential system to implement quantum state transfer among two-dimensional
material quantum dots.
