  We report the realization of field-effect transistors (FETs) made with
chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical
properties such as the FET mobility, subthreshold swing, on/off ratio, and
contact resistance of chemically synthesized (s-) MoS2 are indistinguishable
from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are
different, possibly due to polar chemical residues originating in the transfer
process. Electron diffraction studies and Raman spectroscopy show the
structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior
and properties of s-MoS2 illustrates the feasibility of electronic devices
using synthetic layered 2D crystal semiconductors.
