  We report on the effect of substrate temperature (T) on both local structure
and long-wavelength fluctuations of polycrystalline CdTe thin films deposited
on Si(001). A strong T-dependent mound evolution is observed and explained in
terms of the energy barrier to inter-grain diffusion at grain boundaries, as
corroborated by Monte Carlo simulations. This leads to transitions from
uncorrelated growth to a crossover from random-to-correlated growth and
transient anomalous scaling as T increases. Due to these finite-time effects,
we were not able to determine the universality class of the system through the
critical exponents. Nevertheless, we demonstrate that this can be circumvented
by analyzing height, roughness and maximal height distributions, which allow us
to prove that CdTe grows asymptotically according to the Kardar-Parisi-Zhang
(KPZ) equation in a broad range of T. More important, one finds positive
(negative) velocity excess in the growth at low (high) T, indicating that it is
possible to control the KPZ non-linearity by adjusting the temperature.
