  The optoelectronic properties of atomically thin transition-metal
dichalcogenides are strongly correlated with the presence of defects in the
materials, which are not necessarily detrimental for certain applications. For
instance, defects can lead to an enhanced photoconduction, a complicated
process involving charge generation and recombination in the time domain and
carrier transport in the spatial domain. Here, we report the simultaneous
spatial and temporal photoconductivity imaging in two types of WS2 monolayers
by laser-illuminated microwave impedance microscopy. The diffusion length and
carrier lifetime were directly extracted from the spatial profile and temporal
relaxation of microwave signals respectively. Time-resolved experiments
indicate that the critical process for photo-excited carriers is the escape of
holes from trap states, which prolongs the apparent lifetime of mobile
electrons in the conduction band. As a result, counterintuitively, the
photoconductivity is stronger in CVD samples than exfoliated monolayers with a
lower defect density. Our work reveals the intrinsic time and length scales of
electrical response to photo-excitation in van der Waals materials, which is
essential for their applications in novel optoelectronic devices.
