  Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction
were used to measure accurately the full strain tensor and the lattice
orientation distribution at the sub-micron scale in highly strained, suspended
Ge micro-devices. A numerical approach to obtain the full strain tensor from
the deviatoric strain measurement alone is also demonstrated and used for
faster full strain mapping. We performed the measurements in a series of
micro-devices under either uniaxial or biaxial stress and found an excellent
agreement with numerical simulations. This shows the superior potential of Laue
micro-diffraction for the investigation of highly strained micro-devices.
