  Recent quantum-gas microscopy of ultracold atoms and scanning tunneling
microscopy of the cuprates reveal new detailed information about doped Mott
antiferromagnets, which can be compared with calculations. Using cellular
dynamical mean-field theory, we map out the antiferromagnetic (AF) phase of the
two-dimensional Hubbard model as a function of interaction strength $U$, hole
doping $\delta$ and temperature $T$. The N\'eel phase boundary is non-monotonic
as a function of $U$ and $\delta$. Frustration induced by second-neighbor
hopping reduces N\'eel order more effectively at small $U$. The doped AF is
stabilized at large $U$ by kinetic energy and at small $U$ by potential energy.
The transition between the AF insulator and the doped metallic AF is
continuous. At large $U$, we find in-gap states similar to those observed in
scanning tunneling microscopy. We predict that, contrary to the Hubbard bands,
these states are only slightly spin polarized.
