  It is critical to capture the effect due to strain and material interface for
device level transistor modeling. We introduced a transferable sp3d5s* tight
binding model with nearest neighbor interactions for arbitrarily strained group
IV and III-V materials. The tight binding model is parameterized with respect
to Hybrid functional(HSE06) calculations for varieties of strained systems. The
tight binding calculations of ultra small superlattices formed by group IV and
group III-V materials show good agreement with the corresponding HSE06
calculations. The application of tight binding model to superlattices
demonstrates that transferable tight binding model with nearest neighbor
interactions can be obtained for group IV and III-V materials.
