  Integration of transition metal dichalcogenides (TMDs) on ferromagnetic
materials (FM) may yield fascinating physics and promise for electronics and
spintronic applications. In this work, high-temperature anomalous Hall effect
(AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing
it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is
demonstrated. In this heterostructure, significant anomalous Hall effect can be
observed at temperatures up to at least 400 K, which is a record high
temperature for the observation of AHE in TMDs, and the large RAHE is more than
one order of magnitude larger than those previously reported value in
topological insulators or TMDs based heterostructures. The magnetization of
interfacial reaction-induced ZrO2 between YIG and ZrTe2 is believed to play a
crucial role for the induced high-temperature anomalous Hall effect in the
ZrTe2. These results reveal a promising system for the room-temperature
spintronic device applications, and it may also open a new avenue toward
introducing magnetism to TMDs and exploring the quantum AHE at higher
temperatures considering the prediction of nontrivial topology in ZrTe2.
