  In scanning gate microscopy, where the tip of a scanning force microscope is
used as a movable gate to study electronic transport in nanostructures, the
shape and magnitude of the tip-induced potential are important for the
resolution and interpretation of the measurements. Contaminations picked up
during topography scans may significantly alter this potential. We present an
in situ high-field treatment of the tip that improves the tip-induced
potential. A quantum dot was used to measure the tip-induced potential.
