  We studied the effect of the V/III flux ratio and substrate temperature on
magnetotransport properties and lattice parameters of Ga0.96Mn0.04As grown by
molecular beam epitaxy. For all the substrate temperatures, the conductivities
and Curie temperatures of the layers were found to increase as the V/III flux
ratio approaches 1. The Curie temperature as high as 95 K was achieved for the
Ga0.96Mn0.04As samples grown at 240C and a V/III ratio of about 1.5. The
lattice parameter of Ga0.96Mn0.04As increased with decreasing V/III ratio
and/or increasing growth temperature. Possible reasons for the effect of V/III
ratio on the magnetotransport properties and lattice parameter of GaMnAs are
discussed.
