  In this contribution, we present an innovative design of the Low-Gain
Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local
and controlled signal multiplication. In the standard LGAD design, the gain
layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor
material, typically Boron or Gallium, in the region below the n$^{++}$
electrode. In our design, we aim at designing a gain layer resulting from the
overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and
donor doping will result in an effective concentration of about 5E16/cm$^3$,
similar to standard LGADs. At present, the gain mechanism of LGAD sensors under
irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it
is lost due to the acceptor removal mechanism. The new design will be more
resilient to radiation, as both acceptor and donor atoms will undergo removal
with irradiation, but their difference will maintain constant. The compensated
design will empower the 4D tracking ability typical of the LGAD sensors well
above 1E16/cm$^2$.
