  Encapsulating graphene in hexagonal Boron Nitride has several advantages: the
highest mobilities reported to date are achieved in this way, and precise
nanostructuring of graphene becomes feasible through the protective hBN layers.
Nevertheless, subtle effects may arise due to the differing lattice constants
of graphene and hBN, and due to the twist angle between the graphene and hBN
lattices. Here, we use a recently developed model which allows us to perform
band structure and magnetotransport calculations of such structures, and show
that with a proper account of the moir\'e physics an excellent agreement with
experiments can be achieved, even for complicated structures such as disordered
graphene, or antidot lattices on a monolayer hBN with a relative twist angle.
Calculations of this kind are essential to a quantitative modeling of
twistronic devices.
