  We report on the elaboration of germanium manganese nanostructured thin films
and the measurement of their thermoelectric properties. We investigate the
growth of Ge:Mn layers along with a thorough structural characterization of
this materials at the nanoscale. The room temperature thermoelectric properties
of these layers containing spherical inclusions are discussed regarding their
potential as a model of "electron crystal phonon glass material". We show that
the thermal conductivity can be decreased by a factor of 30, even if the
electronic properties can be conserved as in the bulk. The thermoelectric
performance ZT of such material is as high as 0.15 making them a promising
thermoelectric p-type material for Ge related application.
