  Voltages generated from inverse spin Hall and anisotropic magneto-resistance
effects via spin pumping in ferromagnetic (F)/non-magnetic (N) bilayers are
investigated by means of a broadband ferromagnetic resonance approach. Varying
the non-magnetic layer thickness enables the determination of the spin
diffusion length in Pd of 5.5 +/- 0.5 nm. We also observe a systematic change
of the voltage lineshape when reversing the stacking order of the F/N bilayer,
which is qualitatively consistent with expectations from spin Hall effects.
However, even after independent calibration of the precession angle, systematic
quantitative discrepancies in analyzing the data with spin Hall effects remain.
