  The combined effect of bulk and interface electron-phonon couplings on the
transport properties is investigated in a model for organic semiconductors
gated with polarizable dielectrics. While the bulk electron-phonon interaction
affects the behavior of mobility in the coherent regime below room temperature,
the interface coupling is dominant for the activated high $T$ contribution of
localized polarons. In order to improve the description of the transport
properties, the presence of disorder is needed in addition to electron-phonon
couplings. The effects of a weak disorder largely enhance the activation
energies of mobility and induce the small polaron formation at lower values of
electron-phonon couplings in the experimentally relevant window $150 K<T<300
K$. The results are discussed in connection with experimental data of rubrene
organic field-effect transistors.
