  Thermal transient measurement based on source-drain voltage is a standard
method to characterize thermal properties of silicon semiconductors but is
doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate
its feasibility and limitations, this paper conducts a comprehensive
investigation into its accuracy, resolution, and stability towards yielding the
structure information of SiC MOSFET using the source-drain voltage as the
temperature sensitive electrical parameter. The whole characterization process
involves two main procedures and associated key testing parameters, such as
gate voltages, sensing and heating currents, etc. Their impacts on both the
static and dynamic performances are also investigated with the aim of providing
a guideline for conducting a reproducible thermal transient measurement for SiC
MOSFETs.
