  Low-energy ion beam modification was proposed to create graphene on the top
of the insulated diamond-like carbon films. In such low-temperature fabrication
process the surface of the amorphous carbon could crystallize to graphene as a
result of point defect creation and enhanced diffusion caused by the ion
bombardment. In the experiment 130 eV argon ion irradiation was used. After the
modification the resistivity of the sample surface drops. Raman spectra of the
samples measured at 633 nm showed partial crystallization and were similar to
the spectra of defected graphene. This result is very encouraging and we hope
that by improving this technology it will be possible to fabricate defect-free
graphene, which can be used in electronics without transfer to other substrates
