  The exciton decay rate at a rough interface in type-II semiconductor
superlattices is investigated. It is shown that the possibility of
recombination of indirect excitons at a plane interface essentially affects
kinetics of the exciton photoluminescence at a rough interface. This happens
because of strong correlation between the exciton recombination at the plane
interface and at the roughness. Expressions that relate the parameters of the
luminescence kinetics with statistical characteristics of the rough interface
are obtained. The mean height and length of roughnesses in GaAs/AlAs
superlattices are estimated from the experimental data.
