  Recent success in the growth of monolayer MoS$_2$ via chemical vapor
deposition (CVD) has opened up prospects for the implementation of these
materials into thin film electronic and optoelectronic devices. Here, we
investigate the electronic transport properties of individual crystallites of
high quality CVD-grown monolayer MoS$_2$. The devices show low temperature
mobilities up to 500 cm$^2$V$^{-1}$s$^{-1}$ and a clear signature of metallic
conduction at high doping densities. These characteristics are comparable to
the electronic properties of the best mechanically exfoliated monolayers in
literature, verifying the high electronic quality of the CVD-grown materials.
We analyze the different scattering mechanisms and show, that the short-range
scattering plays a dominant role in the highly conducting regime at low
temperatures. Additionally, the influence of phonons as a limiting factor of
these devices is discussed.
