  We have performed continuous wave and pulsed electron spin resonance
measurements of implanted bismuth donors in isotopically enriched silicon-28.
Donors are electrically activated via thermal annealing with minimal diffusion.
Damage from bismuth ion implantation is repaired during thermal annealing as
evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin
coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion
implanted bismuth as a promising candidate for spin qubit integration in
silicon.
