  We report large-yield production of graphene flakes on glass by anodic
bonding. Under optimum conditions, we counted several tens of flakes with
lateral size around 20-30 {\mu}m and few tens of flakes with larger size.
60-70% of the flakes have negligible D peak. We show that it is possible to
easily transfer the flakes by wedging technique. The transfer on silicon does
not damage graphene and lowers the doping. The charge mobility of the
transferred flakes on silicon is of the order of 6000 cm^2/V s (at carrier
concentration of 10^12 cm^-2), which is typical for devices prepared on this
substrate with exfoliated graphene.
