  Diluted magnetic semiconductors (DMS) have attracted significant attention
for their potential in spintronic applications. Particularly,
magnetically-doped GaN is highly attractive due to its high relevance for the
CMOS industry and the possibility of developing advanced spintronic devices
which are fully compatible with the current industrial procedures. Despite this
interest, there remains a need to investigate the spintronic parameters that
characterize interfaces within these systems. Here, we perform spin Hall
magnetoresistance (SMR) measurements to evaluate the spin transfer at a
Pt/(Ga,Mn)N interface. We determine the transparency of the interface through
the estimation of the real part of the spin mixing conductance finding $G_r =
2.6\times 10^{14} \, \Omega^{-1} m^{-2}$, comparable to state-of-the-art
yttrium iron garnet (YIG)/Pt interfaces. Moreover, the magnetic ordering probed
by SMR above the (Ga,Mn)N Curie temperature TC provides a broader temperature
range for the efficient generation and detection of spin currents, relaxing the
conditions for this material to be applied in new spintronic devices.
