  Graphene is an excellent material for Hall sensors due to its atomically thin
structure, high carrier mobility and low carrier density. However, graphene
devices need to be protected from the environment for reliable and durable
performance in different environmental conditions. Here we present magnetic
Hall sensors fabricated on large area commercially available CVD graphene
protected by exfoliated hexagonal boron nitride (h-BN). To connect the graphene
active regions of Hall samples to the outputs the 1D edge contacts were
utilized which show reliable and stable electrical properties. The operation of
the Hall sensors shows the current-related sensitivity up to 345 V/(AT). By
changing the carrier concentration and type in graphene by the application of
gate voltage we are able to tune the Hall sensitivity.
