  The Channel-Spark method was used for deposition of highly oriented
ferromagnetic La0.7Sr0.3MnO3 films on NdGaO3 substrates. It was found that
additional oxygen decreases the film quality suppressing the Curie temperature
and metal-insulator transition below the room temperature. To achieve the best
quality of the films the samples were either annealed in high vacuum at
deposition temperature or even deposited in argon atmosphere with no oxygen
annealing. For such films the resistive measurements showed a metallic
behaviour in the interval 10-300 K in accordance with the high Curie point (Tc
350 K). Micro-Raman analysis indicate that the La0.7Sr0.3MnO3 films are well
ordered, while some outgrowths show stoichiometrical deviations.
