  We report the batch fabrication of graphene field-effect-transistors (GFETs)
with nanoperforated graphene as channel. The transistors were cut and
encapsulated. The encapsulated GFETs display saturation regions that can be
tuned by modifying the top gate voltage, and have on/off ratios of up to 10^8
at room temperature. In addition, the nanoperforated GFETs display orders of
magnitude higher photoresponses than any room-temperature graphene detector
configurations that do not involve heterostructures with bandgap materials.
