  An influence of the localization of itinerant electrons induced by correlated
hopping on the electronic charge and heat transport is discussed for the
lightly doped Mott insulator phase of the Falicov-Kimball model. The case of
strongly reduced hopping amplitude between the sites with occupied f-electron
levels, when an additional band of localized d-electron states could appear on
the DOS in the Mott gap, is considered. Due to the electron-hole asymmetry and
anomalous features on the DOS and transport function induced by correlated
hopping, a strong enhancement of the Seebeck coefficient is observed at low
temperatures, when the flattened dependence is displayed in a wide temperature
range.
