  We report strategies of achieving both high assembly yield of carbon
nanotubes at selected position of the circuit via dielectrophoresis (DEP) and
field effect transistor (FET) yield using semiconducting enriched single walled
carbon nanotube (s-SWNT) aqueous solution. When the DEP parameters were
optimized for the assembly of individual s-SWNT, 97% of the devices show FET
behavior with a maximum mobility of 210 cm2/Vs, on-off current ratio ~ 106 and
on conductance up to 3 {\mu}S, however with an assembly yield of only 33%. As
the DEP parameters were optimized so that 1-5 s-SWNTs are connected per
electrode pair, the assembly yield was almost 90% with ~ 90% of these assembled
devices demonstrating FET behavior. Further optimization gives an assembly
yield of 100% with up to 10 SWNT/site, however with a reduced FET yield of 59%.
Improved FET performance including higher current on-off ratio and high
switching speed were obtained by integrating a local Al2O3 gate to the device.
Our 90% FET with 90% assembly yield is the highest reported so far for carbon
nanotube devices. Our study provides a pathway which could become a general
approach for the high yield fabrication of CMOS compatible carbon nanotube
FETs.
