  Over the last few years, a new mode for imaging in the scanning transmission
electron microscope (STEM) has gained attention as it permits the direct
visualization of sample conductivity and electrical connectivity. When the
electron beam (e-beam) is focused on the sample in the STEM, secondary
electrons (SEs) are generated. If the sample is conductive and electrically
connected to an amplifier, the SE current can be measured as a function of the
e-beam position. This scenario is similar to the better-known scanning electron
microscopy (SEM)-based technique, electron beam induced current (EBIC) imaging
except the signal in STEM is generated by the emission of SEs, hence the name
SEEBIC, and in this case the current flows in the opposite direction. Here, we
provide a brief review of recent work in this area, examine the various
contrast generation mechanisms associated with SEEBIC, and illustrate its use
for the characterization of graphene nanoribbon devices.
