  We report the fabrication of perpendicular ferromagnetic electrodes for
tunneling devices consist of van der Waals heterostructure. We found MgO/Co/Pt
films on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with the
easy axis perpendicular to the substrate. Vacuum annealing enhances the
perpendicular anisotropy. The easy axis along the perpendicular direction
persists up to room temperature with the Pt layer thickness ranges from 1.5 to
5 nm. We employed the PMA electrodes to construct tunneling devices on graphene
and monolayer WSe2, where spin injection characteristics and field effect
transistor behavior were demonstrated without strong Schottky barrier
formation.
