  A tunneling transistor without heterojunction as a theoretical design, or
more precisely controlled electron current transmission by barrier potential,
is under consideration.
  The electrons from the conduction band of the source tunnel through the
forbidden gap $E_g$ of the channel to the conduction band of the drain. The
tunneling current $J$ calculations made at helium temperature for the example
InAs-InAs-InAs, Au-GaSe-Au and Al-AlN-Al structures show that for a constant
source-drain voltage, $V_C$, of several mV, changes in the gate voltage, $V_G$,
applied to the channel within the voltage range of 0 - $E_g/$2e change $J$ by
even 10 orders of magnitude. Unlike the existing solutions such as tunnel
field-effect-transistor (TFET), the proposed device uses the change of $V_G$
(gate voltage), i.e. the change of the electrostatic potential in the channel,
to modify the imaginary wave vector $k_z$ of tunnel current electrons.
Consequently, the gate voltage controls the damping force of the electrons wave
functions and thus the magnitude of the tunneling current, $J$. The effect of
increasing temperature, T, on $J(V_G)$ relation was also tested. It was found
that only in structures with a wide forbidden channel gap this effect is
insignificant (at least up to T=300 K).
