  We investigated the temperature dependence of the switching current for a
perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten
film with large oxygen content: nc-W(O). The spin Hall angle
$|\Theta_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the
switching current increases strongly at low temperature. We show that the
nc-W(O) is insensitive to annealing. It thus can be a good choice for the
integration of spin Hall driven writing of information in magnetic memory or
logic devices that require a high-temperature annealing process during
fabrication.
