  The manuscript theoretically discusses various important aspects for donor
atom based single qubit operations in silicon (Si) quantum computer
architecture at room temperature using a single nitrogen (N) deep-donor close
to the Si/SiO2 interface. Quantitative investigation of room temperature single
electron shuttling between a single N-donor atom and the interface is the focus
of attention under the influence of externally applied electric and magnetic
field. To apprehend the realistic experimental configurations, central cell
correction along with effective mass approach is adopted throughout the study.
Furthermore, a detailed discussion currently explores the significant time
scales implicated in the process and their suitability for experimental
purposes. Theoretical estimates are also provided for all the external fields
required to successfully achieve coherent single electron shuttling and their
stable maintenance at the interface as required. The results presented in this
work offer practical guidance for quantum electron control using N-donor atoms
in Si at room temperature.
