  Advances in nanomechanics within recent years have demonstrated an always
expanding range of devices, from top-down structures to appealing bottom-up
MoS$_2$ and graphene membranes, used for both sensing and component-oriented
applications. One of the main concerns in all of these devices is frequency
noise, which ultimately limits their applicability. This issue has attracted a
lot of attention recently, and the origin of this noise remains elusive up to
date. In this Letter we present a very simple technique to measure frequency
noise in nonlinear mechanical devices, based on the presence of bistability. It
is illustrated on silicon-nitride high-stress doubly-clamped beams, in a
cryogenic environment. We report on the same $T/f$ dependence of the frequency
noise power spectra as reported in the literature. But we also find unexpected
{\it damping fluctuations}, amplified in the vicinity of the bifurcation
points; this effect is clearly distinct from already reported nonlinear
dephasing, and poses a fundamental limit on the measurement of bifurcation
frequencies. The technique is further applied to the measurement of frequency
noise as a function of mode number, within the same device. The relative
frequency noise for the fundamental flexure $\delta f/f_0$ lies in the range
$0.5 - 0.01~$ppm (consistent with literature for cryogenic MHz devices), and
decreases with mode number in the range studied. The technique can be applied
to {\it any types} of nano-mechanical structures, enabling progresses towards
the understanding of intrinsic sources of noise in these devices.
