  We control the electronic structure of the silicon-vacancy (SiV) color-center
in diamond by changing its static strain environment with a
nano-electro-mechanical system. This allows deterministic and local tuning of
SiV optical and spin transition frequencies over a wide range, an essential
step towards multi-qubit networks. In the process, we infer the strain
Hamiltonian of the SiV revealing large strain susceptibilities of order 1
PHz/strain for the electronic orbital states. We identify regimes where the
spin-orbit interaction results in a large strain suseptibility of order 100
THz/strain for spin transitions, and propose an experiment where the SiV spin
is strongly coupled to a nanomechanical resonator.
