  the realization of high repetition rate passively Q-switched monolithic
microlaser is a challenge since a decade. To achieve this goal, we report here
on the first passively Q-switched diode-pumped microchip laser based on the
association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The
monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted
on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as
high as 85 kHz is achieved. The average output power is approximately 400 mW
for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.
