  We investigated the magnetotransport properties of strained, 80nm thick HgTe
layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate
the Fermi-energy is tuned from the valence band through the Dirac type surface
states into the conduction band. Magnetotransport measurements allow to
disentangle the different contributions of conduction band electrons, holes and
Dirac electrons to the conductivity. The results are are in line with previous
claims that strained HgTe is a topological insulator with a bulk gap of ~15meV
and gapless surface states.
