  The temperature driven flow lines of the diagonal and Hall magnetoconductance
data (G_{xx},G_{xy}) are studied in heavily Si-doped, disordered GaAs layers
with different thicknesses. The flow lines are quantitatively well described by
a recent universal scaling theory developed for the case of duality symmetry.
The separatrix G_{xy}=1 (in units e^2/h) separates an insulating state from a
spin-degenerate quantum Hall effect (QHE) state. The merging into the insulator
or the QHE state at low temperatures happens along a semicircle separatrix
G_{xx}^2+(G_{xy}-1)^2=1 which is divided by an unstable fixed point at
(G_{xx},G_{xy})=(1,1).
