  Nanoscale multifunctional perpendicular organic spin valves have been
fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co
trilayer show resistive switching of up to 4-5 orders of magnitude and
magnetoresistance as high as -70% the latter even changing sign when voltage
pulses are applied. This combination of phenomena is typically observed in
multiferroic tunnel junctions where it is attributed to magnetoelectric
coupling between a ferromagnet and a ferroelectric material. Modeling indicates
that here the switching originates from a modification of the
La$_{0.7}$Sr$_{0.3}$MnO$_3$ surface. This modification influences the tunneling
of charge carriers and thus both the electrical resistance and the tunneling
magnetoresistance which occurs at pinholes in the organic layer.
