  We quantify the relative weight of inverse spin Hall and spin rectification
effects occurring in RF-sputtered polycrystalline permalloy, molecular beam
epitaxy-grown epitaxial iron and liquid phase epitaxy-grown yttrium-iron-garnet
bilayer systems with different capping materials. To distinguish the spin
rectification signal from the inverse spin Hall voltage the external magnetic
field is rotated in-plane to take advantage of the different angular
dependencies of the prevailing effects. We prove that in permalloy anisotropic
magnetoresistance is the dominant source for spin rectification while in
epitaxial iron the anomalous Hall effect has an also comparable strength. The
rectification in yttrium-iron-garnet/platinum bilayers reveals an angular
dependence imitating the one seen for anisotropic magnetoresistance caused by
spin Hall magnetoresistance.
