  Electronic spin systems with S>1/2 provide an efficient method for DC vector
magnetometry, since the conventional electron spin resonance spectra at a given
magnetic field reflect not only the field strength but also orientation in the
presence of strong spin-spin interactions. S=1 spins, e.g. the nitrogen-vacancy
centers in diamond, have been intensively investigated for such a purpose. In
this report, we compare S=1 and S=3/2 spins, and discuss how one can apply
general principles for the use of high spin systems as a vector magnetometer to
the S=3/2 spin systems. We find analytical solutions which allow a
reconstruction of the magnetic field strength and polar angle using the
observed resonance transitions if an uniaxial symmetry exists for the spin-spin
interaction as in S=1 systems. We also find that an ambiguity of determining
the field parameters may arise due to the unique properties of S=3/2 systems,
and present solutions for it utilizing additional transitions in the low-field
region. The electronic spins of the silicon vacancy in silicon carbide will be
introduced as a model for the S=3/2 DC vector magnetometer and the practical
usage of it, including the magic-angle spinning type method, will be presented
too.
