  The electron-ion recombination rate coefficient for Si IV forming Si III was
measured at the heavy-ion storage-ring TSR. The experimental electron-ion
collision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronic
recombination (DR) resonances associated with 3s to nl core excitations, 2s
2p(6) 3s nl n'l' resonances associated with 2s to nl (n=3,4) core excitations,
and 2p(5) 3s nl n'l' resonances associated with 2p to nl (n=3,...,infinity)
core excitations. The experimental DR results are compared with theoretical
calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via
the 3s to 3p n'l' and 3s to 3d n'l' (both n'=3,...,6) and 2p(5) 3s 3l n'l'
(n'=3,4) capture channels. Finally, the experimental and theoretical plasma DR
rate coefficients for Si IV forming Si III are derived and compared with
previously available results.
