  Thin films of molybendum disulfide grown via thermal atomic layer deposition
at low temperatures, suitable for temperature sensible substrates, can be
amorphous. To avoid a high temperature post treatment of the whole sample,
which can cause thermal degradation of the substrate or other layers, a
ultrashort pulse (usp) laser-induced transformation to crystalline layers is
one of the most promising routes. In this paper we report the crystallization
of amorphous MoS$_2$ layers processed with ultrashort laser pulses. The
amorphous MoS$_2$ films were deposited by atomic layer deposition (ALD) and
exposed to picosecond laser pulses ($\lambda = 532$ nm). The crystallization
and the influence of the processing parameters on the film morphology were
analyzed in detail by Raman spectroscopy and scanning electron microscopy.
Furthermore, a transition of amorphous MoS$_2$ by laser annealing to
self-organized patterns is demonstrated and a possible process mechanism for
the ultrashort pulse laser annealing is discussed. Finally, the usp laser
annealed films were compared to thermally and continuous wave (cw) laser
annealed samples.
