  We provide effective tight-binding models of monolayer and bilayer hexagonal
boron nitride (h-BN) informed by ab initio density functional theory
calculations within the local density approximation using maximally localized
Wannier functions centered at the boron and nitrogen sites. An effective
intra-layer tight-binding model with up to four distant hopping neighbors
captures the band energies near the K-point and M-point in the Brillouin zone,
including the indirect nature of the band gap for certain stackings. We then
propose a two-center interlayer tight-binding model that can be used for any
stacking in bilayer h-BN based on the relative distance between two atomic
sites which can be used to model twisted h-BN structures.
