  We report on a C-band double layer graphene electro-absorption modulator on a
passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction
ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high
modulation speed is achieved thanks to the quality of the CVD pre-patterned
single crystal growth and transfer on wafer method that permitted the
integration of high-quality scalable graphene and low contact resistance. By
demonstrating this high-speed CVD graphene EAM modulator integrated on Si
photonics and the scalable approach, we are confident that graphene can satisfy
the main requirements to be a competitive technology for photonics.
