  Presented in this paper is a proof-of-concept for a new approach to single
electron pumping based on a Single Atom Transistor (SAT). By charge pumping
electrons through an isolated dopant atom in silicon, precise currents of up to
160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic
field applied, and only when one barrier is addressed by sinusoidal voltage
cycles.
