  We study superfluid behavior of a gas of spatially indirect magnetoexcitons
with reference to a system of two graphene layers embedded in a multilayer
dielectric structure. The system is considered as an alternative of a double
quantum well in a GaAs haterostructure. We determine a range of parameters
(interlayer distance, dielectric constant, magnetic field and gate voltage)
where magnetoexciton superfluidity can be achieved. Temperature of superfluid
transition is computed. A reduction of critical parameters caused by impurities
is evaluated and critical impurity concentration is determined.
