  Reflection high-energy electron diffraction (RHEED) is a ubiquitous in situ
molecular beam epitaxial (MBE) characterization tool. Although RHEED can be a
powerful means for crystal surface structure determination, it is often used as
a static qualitative surface characterization method at discrete intervals
during a growth. A full analysis of RHEED data collected during the entirety of
MBE growths is made possible using principle component analysis (PCA) and
k-means clustering to examine significant boundaries that occur in the temporal
clusters grouped from RHEED data and identify statistically significant
patterns. This process is applied to data from homoepitaxial SrTiO$_{3}$
growths, heteroepitaxial SrTiO$_{3}$ grown on scandate substrates, BaSnO$_{3}$
films grown on SrTiO$_{3}$ substrates, and LaNiO$_{3}$ films grown on
LaAlO$_{3}$ substrates. This analysis may provide additional insights into the
surface evolution and transitions in growth modes at precise times and depths
during growth, and that video archival of an entire RHEED image sequence may be
able to provide more insight and control over growth processes and film
quality.
