  We present non-linear transport measurements on suspended, current annealed
bilayer graphene devices. Using a multi-terminal geometry we demonstrate that
devices tend to be inhomogeneous and host two different electronic phases next
to each other. Both of these phases show gap-like features of different
magnitude in non-linear transport at low charge carrier densities, as already
observed in previous studies. Here, we investigate the magnetic field
dependence and find that both features grow with increasing field, the smaller
one with 0.6 meV/T, the larger one with a 5-10 times higher field dependence.
We attribute the larger of the two gaps to an interaction induced broken
symmetry state and the smaller one to localization in the more disordered parts
of the device.
