  We consider the anomalous, spin, valley, and valley spin Hall effects in a
pristine ex-so-tic graphene-based van-der-Waals (vdW) heterostructure
consisting of a bilayer graphene (BLG) between semiconducting van-der-Waals
material with strong SOC (e.g., WS$_2$) and ferromagnetic and insulating vdW
material (e.g. Cr$_2$Ge$_2$Te$_6$). Reducing the effective Hamiltonian derived
by Zollner et al [Phys. Rev. Lett. 125(19), 196402 (2020)] to low-energy
states, and using the Green function formalism, we derived analytical results
for the Hall conductivities as a function of the Fermi level and gate voltage.
Depending on these parameters, we found quantized valley conductivity.
