  A metallic ring based, diode-integrated, low-profile, power-dependent,
reflective metasurface working from 3 GHz to 3.6 GHz is proposed in this
letter. Unlike the previous study which shifts a band up and down to change the
impedance of the surface, the triggering of the diodes directly transforms the
structure from a surface wave supportive state to a self-induced bandgap
topology if exposed to high power RF illumination. We demonstrate the concept
by conducting the EM-circuit co-simulation and measurements for a 6 by 8 unit
2D prototype. Near field scan experiments verify that the proposed topology
works in two distinct states, the ON and OFF state, and high-power measurements
prove that the reflection varies with the incident signal power. The highest 10
dB decrement in transmission occurs at 3.3 GHz with 52 dBm illumination. This
structure can be used to protect sensitive devices from large signals while
otherwise supporting a communication channel for small signals.
