  As the Si-based transistors scale down to atomic dimensions, the basic
principle of current electronics, which heavily relies on the tunable charge
degree of freedom, faces increasing challenges to meet the future requirements
of speed, switching energy, heat dissipation, packing density as well as
functionalities. Heterogeneous integration, where dissimilar layers of
materials and functionalities are unrestrictedly stacked at an atomic scale, is
appealing to next-generation electronics, such as multi-functional,
neuromorphic, spintronic and ultra-low power devices, because it unlocks
technologically useful interfaces of distinct functionalities. Recently, the
combination of functional perovskite oxides and the two-dimensional layered
materials (2DLMs) led to unexpected functionalities and enhanced device
performance. In this review, we review the recent progress of the heterogeneous
integration of perovskite oxides and 2DLMs from the perspectives of fabrication
and interfacial properties, electronic applications, challenges as well as
outlooks. In particular, we focus on three types of attractive applications,
namely field-effect transistors, memory, and neuromorphic electronics. The van
der Waals integration approach is extendible to other oxides and 2DLMs, leading
to almost unlimited combinations of oxides and 2DLMs and contributing to future
high-performance electronic and spintronic devices.
