  Nonlinear Hall effect (NHE) can be generated via Berry curvature dipole (BCD)
on nonequilibrium Fermi surface in a non-magnetic system without inversion
symmetry.To achieve a large BCD, strong local Berry curvatures and their
variation with respect to momentum are necessary and hence topological
materials with strong inter-band coupling emerge as promising candidates. In
this study, we propose a switchable and robust BCD in the newlydiscovered dual
quantum spin Hall insulator (QSHI) $\text{TaIrTe}_4$ by applying out-of-plane
electric fields. Switchable BCD could be found along with topological phase
transitions or insulator-metal transition in the primitive cell and CDW phases
of $\text{TaIrTe}_4$ monolayer. This work presents an instructive strategy for
achieving a switchable and robust BCD within dual QSHIs, which should be
helpful for designing the NHE-based THz radiations detector.
