  We present measurements of the capacitive coupling energy and the inter-dot
capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With
the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel
coupling, as is typical for double dot qubits, we measure a capacitive coupling
energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting
procedure to extract all the parameters in the 4D Hamiltonian for two
capacitively coupled charge qubits from a 2D slice through the quadruple dot
charge stability diagram. We also investigate the tunability of the capacitive
coupling energy, using inter-dot barrier gate voltages to tune the inter- and
intra-double dot capacitances, and change the capacitive coupling energy of the
double dots over a range of 15-32 GHz. We provide a model for the capacitive
coupling energy based on the electrostatics of a network of charge nodes joined
by capacitors, which shows how the coupling energy should depend on
inter-double dot and intra-double dot capacitances in the network, and find
that the expected trends agree well with the measurements of coupling energy.
