  We demonstrate the fabrication of diffraction-limited dielectric metasurface
lenses for NIR by use of standard industrial high throughput silicon processing
techniques: UV Nano Imprint Lithography (UV-NIL) combined with continuous
Reactive Ion Etching (RIE) and pulsed Bosch Deep Reactive Ion Etching (DRIE).
As the research field of metasurfaces moves towards applications these
techniques are relevant as potential replacements of commonly used
cost-intensive fabrication methods utilizing Electron Beam Lithography. We show
that washboard-type sidewall surface roughness arising from the Bosch DRIE
process can be compensated for in the design of the metasurface, without
deteriorating lens quality. Particular attention is given to fabrication
challenges that must be overcome towards high throughput production of
relevance to commercial applications. Lens efficiencies are measured to be 30%
and 17% at wavelengths {\lambda} = 1.55$\mu$m and {\lambda} = 1.31$\mu$m,
respectively. A number of routes towards process optimization are proposed in
relation to encountered challenges.
