  An electron beam is deflected when it passes over a silicon nitride surface,
if the surface is illuminated by a low-power continuous-wave diode laser. A
deflection angle of up-to $1.2 \,\textrm{mrad}$ is achieved for an electron
beam of $29 \,\mu\textrm{rad}$ divergence. A mechanical beam-stop is used to
demonstrate that the effect can act as an optical electron switch with a rise
and fall time of $6 \,\mu\textrm{s}$. Such a switch provides an alternative
means to control electron beams, which may be useful in electron lithography
and microscopy.
