  We present temperature dependent $I-V$ measurements of short channel MoS$_2$
field effect devices at high source-drain bias. We find that although the $I-V$
characteristics are Ohmic at low bias, the conduction becomes space charge
limited at high $V_{DS}$ and existence of an exponential distribution of trap
states was observed. The temperature independent critical drain-source voltage
($V_c$) was also determined. The density of trap states was quantitatively
calculated from $V_c$. The possible origin of exponential trap distribution in
these devices is also discussed.
