  Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal
structure. The topological nature of electrons in the Te conduction band can be
studied by realizing n-type doping using atomic layer deposition (ALD)
technique on two-dimensional (2D) Te film. In this work, we fabricated and
measured the double-gated n-type Te Hall-bar devices, which can operate as two
separate or coupled electron layers controlled by the top gate and back gate.
Profound Shubnikov-de Haas (SdH) oscillations are observed in both top and
bottom electron layers. Landau level hybridization between two layers, compound
and charge-transferable bilayer quantum Hall states at filling factor 4, 6, and
8 are analyzed. Our work opens the door for the study of Weyl physics in
coupled bilayer systems of 2D materials.
