  We report that strong perpendicular magnetic anisotropy of the ferromagnetic
layer in a W/CoFeB/MgO multilayer structure can be established by inserting a
Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also
allows transmission of spin currents generated by an in-plane charge current in
the W layer to apply strong spin torque on the CoFeB, thereby enabling
current-driven magnetic switching. The antidamping-like and field-like
components of the spin torque exerted on a 1 nm CoFeB layer are of comparable
magnitudes in this geometry. Both components originate from the spin Hall
effect in the underlying W layer.
