  Interface can be a fertile ground for exotic quantum states, including
topological superconductivity, Majorana mode, fractal quantum Hall effect,
unconventional superconductivity, Mott insulator, etc. Here we grow
single-unit-cell (1UC) FeTe film on NbSe2 single crystal by molecular beam
epitaxy (MBE) and investigate the film in-situ with home-made cryogenic
scanning tunneling microscopy (STM) and non-contact atomic force microscopy
(AFM) combined system. We find different stripe-like superlattice modulations
on grown FeTe film with different misorientation angles with respect to NbSe2
substrate. We show that these stripe-like superlattice modulations can be
understood as moire pattern forming between FeTe film and NbSe2 substrate. Our
results indicate that the interface between FeTe and NbSe2 is atomically sharp.
By STM-AFM combined measurement, we suggest the moire superlattice modulations
have an electronic origin when the misorientation angle is relatively small (<=
3 degree) and have structural relaxation when the misorientation angle is
relatively large (>= 10 degree).
