  Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel
sensors, have proven that the CMOS process is radiation tolerant enough to cope
with certain radiation levels required for tracking layers in hadron collider
experiments. With the ever-increasing area covered by silicon tracking
detectors cost effective alternatives to the current silicon sensors and more
integrated designs are desirable. This article describes results obtained from
laboratory measurements of silicon strip sensors produced in a passive p-CMOS
process. Electrical characterization and charge collection measurements with a
90Sr source and a laser with infrared wavelength showed no effect of the
stitching process on the performance of the sensor.
