  Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices
are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to
realize semiconducting barriers which may be tuned from Ohmic to tunneling
conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with
large charging energy >5 meV, with additional features implying excited states.
