  We investigate the high-order harmonic generation (HHG) in doped
semiconductors. The HHG is simulated with the single-electron time-dependent
Schr\"{o}dinger equation (TDSE). The results show that the high-order harmonics
in the second plateau generated from the doped semiconductors is about 1 to 3
orders of magnitude higher than those from the undoped semiconductor. The
results are explained based on the analysis of the energy band structure and
the time-dependent population imaging. Our work indicates that doping can
effectively control the HHG in semiconductor.
