  We report a theoretical prediction of a new class of bulk and intrinsic
quantum Anomalous Hall (QAH) insulators La$X$ ($X$=Br, Cl, and I) via
relativistic first-principle calculations. We find that these systems are
innate long-ranged ferromagnets which, with the help of intrinsic spin-orbit
coupling, become QAH insulators. A low-energy multiband tight binding model is
developed to understand the origin of the QAH effect. Finally integer Chern
number is obtained via Berry phase computation for each two-dimensional plane.
These materials have the added benefit of a sizable band gap of as large as
$\sim$ 25 meV, with the flexibility of enhancing it to above 75 meV via strain
engineering. The synthesis of La$X$ materials will provide the impurity-free
single crystals and thin-film QAH insulators for versatile experiments and
functionalities.
