  Quantum mechanical effects induced by the miniaturization of complementary
metal-oxide-semiconductor (CMOS) technology hamper the performance and
scalability prospects of field-effect transistors. However, those quantum
effects, such as tunnelling and coherence, can be harnessed to use existing
CMOS technology for quantum information processing. Here, we report the
observation of coherent charge oscillations in a double quantum dot formed in a
silicon nanowire transistor detected via its dispersive interaction with a
radio-frequency resonant circuit coupled via the gate. Differential capacitance
changes at the inter-dot charge transitions allow us to monitor the state of
the system in the strong-driving regime where we observe the emergence of
Landau-Zener-St{\"u}ckelberg-Majorana interference on the phase response of the
resonator. A theoretical analysis of the dispersive signal demonstrates that
quantum and tunnelling capacitance changes must be included to describe the
qubit-resonator interaction. Furthermore, a Fourier analysis of the
interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our
results demonstrate charge coherent control and readout in a simple silicon
transistor and open up the possibility to implement charge and spin qubits in
existing CMOS technology.
