  A novel diamond anvil cell suitable for electrical transport measurements
under high pressure has been developed. A boron-doped metallic diamond film was
deposited as an electrode onto a nano-polycrystalline diamond anvil using a
microwave plasma-assisted chemical vapor deposition technique combined with
electron beam lithography. The electrical transport measurements of Pb were
performed up to 8 GPa, and the maximum pressure reached was above 30 GPa. The
boron-doped metallic diamond electrodes showed no signs of degradation after
repeated compression measurements.
