  With an atomic force microscope a ring geometry with self-aligned in-plane
gates was directly written into a GaAs/AlGaAs-heterostructure. Transport
measurements in the open regime show only one transmitting mode and
Aharonov-Bohm oscillations with more than 50% modulation are observed in the
conductance. The tuning via in-plane gates allows to study the Aharonov-Bohm
effect in the whole range from the open ring to the Coulomb-blockade regime.
