  We demonstrate single photon emission from self-assembled m-plane InGaN
quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination
of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon
autocorrelation experiments give a thorough evaluation of the QDs structural
and optical properties. The QD exhibits anti-bunched emission up to 100 K, with
a measured autocorrelation function of g^2(0) = 0.28 (0.03) at 5 K. Studies on
a statistically significant number of QDs show that these m-plane QDs exhibit
very fast radiative lifetimes (260 +/- 55 ps) suggesting smaller internal
fields than any of the previously reported c-plane and a-plane QDs. Moreover,
the observed single photons are almost completely linearly polarized aligned
perpendicular to the crystallographic c-axis with a degree of linear
polarization of 0.84 +/- 0.12. Such InGaN QDs incorporated in a nanowire system
meet many of the requirements for implementation into quantum information
systems and could potentially open the door to wholly new device concepts.
