  We investigated the complex interaction between a nickel layer and a 4H-SiC
substrate under UV-laser irradiation since the early stages of the atomic
inter-diffusion. An exhaustive description is still lacking in the literature.
A multimethod approach based on Transmission Electron Microscopy, Energy
Dispersive Spectroscopy and Diffraction (electron and X-ray) techniques has
been implemented for a cross-correlated description of the final state of the
contact after laser irradiation. They detailed the stoichiometry and the
lattice structure of each phase formed as well as the Ni/Si alloy profile along
the contact for laser fluences in the range 2.4-3.8 J/cm2. To make a bridge
between process conditions and post-process characterizations, time dependent
ultra-fast phenomena (laser pulse about 160ns), such as intermixing driven
melting and Ni-silicides reactions, have been simulated by a modified phase
fields approach in the proper many-compounds formulation. We disclose that
raising laser fluence has multiple effects: 1) the thickness of the silicide
layer formed at the interface with 4H-SiC expands; 2) the silicon content into
the reacted layer increases; 3) a Ni2Si phase is promoted at the highest
fluence 3.8 J/cm2; 4) silicon atomic diffusion into a topmost residual nickel
layer occurs, with the Ni/Si ratio increasing towards the contact surface.
