  Emerging low-dimensional nanomaterials have been studied for decades in
device applications as field-effect transistors (FETs). However, properly
reporting and comparing device performance has been challenging due to the
involvement and interlinking of multiple device parameters. More importantly,
the interdisciplinarity of this research community results in a lack of
consistent reporting and benchmarking guidelines. Here we report a consensus
among the authors regarding guidelines for reporting and benchmarking important
FET parameters and performance metrics. We provide an example of this reporting
and benchmarking process for a two-dimensional (2D) semiconductor FET. Our
consensus will help promote an improved approach for assessing device
performance in emerging FETs, thus aiding the field to progress more
consistently and meaningfully.
