  In this paper, the flexibility of long-wavelength Type-II InAs/GaSb
superlattice (Ga-containing SL) is explored and investigated from the growth to
the device performance. First, several samples with different SL period
composition and thickness are grown by molecular beam epitaxy. Nearly
strain-compensated SLs on GaSb exhibiting an energy band gap between 105 to 169
meV at 77K are obtained. Second, from electronic band structure calculation,
material parameters are extracted and compared for the different grown SLs.
Finally, two p-i-n device structures with different SL periods are grown and
their electrical performance compared. Our investigation shows that an
alternative SL design could potentially be used to improve the device
performance of diffusion-limited devices for long-wavelength infrared
detection.
