  We show that current induced magneto-logic gates like AND, OR and NOT can be
designed with the simple architecture involving a single nano spin-valve
pillar, as an extension of our recent work on spin-torque-driven magneto-logic
universal gates, NAND and NOR. Here the logical operation is induced by
spin-polarized currents which also form the logical inputs. The operation is
facilitated by the simultaneous presence of a constant controlling magnetic
field, in the absence of which the same element operates as a magnetoresistive
memory element. We construct the relevant phase space diagrams for the free
layer magnetization dynamics in the monodomain approximation and show the
rationale and functioning of the proposed gates. The flipping time for the
logical states of these non-universal gates is estimated to be within nano
seconds, just like their universal counter parts.
