  The negative-U impurity stripes confining the edge channels of semiconductor
quantum wells are shown to allow the effective cooling inside in the process of
the spin-dependent transport. The aforesaid promotes also the creation of
composite bosons and fermions by the capture of single magnetic flux quanta on
the edge channels under the conditions of low sheet density of carriers, thus
opening new opportunities for the registration of the quantum kinetic phenomena
in weak magnetic fields at high temperatures up to the room temperature. As a
certain version noted above we present the first findings of the high
temperature de Haas-van Alphen, 300K, and quantum Hall, 77K, effects in the
silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type
quantum well (Si-QW) confined by the delta barriers heavily doped with boron on
the n-type Si (100) surface. These data appear to result from the low density
of single holes that are of small effective mass in the edge channels of p-type
Si-QW because of the impurity confinement by the stripes consisting of the
negative-U dipole boron centers which seems to give rise to the efficiency
reduction of the electron-electron interaction.
