  Graphene has extraordinary mechanical and electronic properties, making it a
promising material for membrane based nanoelectromechanical systems (NEMS).
Here, chemical-vapor-deposited graphene is transferred onto target substrates
to suspend it over cavities and trenches for pressure-sensor applications. The
development of such devices requires suitable metrology methods, i.e.,
large-scale characterization techniques, to confirm and analyze successful
graphene transfer with intact suspended graphene membranes. We propose fast and
noninvasive Raman spectroscopy mapping to distinguish between freestanding and
substrate-supported graphene, utilizing the different strain and doping levels.
The technique is expanded to combine two-dimensional area scans with
cross-sectional Raman spectroscopy, resulting in three-dimensional Raman
tomography of membrane-based graphene NEMS. The potential of Raman tomography
for in-line monitoring is further demonstrated with a methodology for automated
data analysis to spatially resolve the material composition in micrometer-scale
integrated devices, including free-standing and substrate-supported graphene.
Raman tomography may be applied to devices composed of other two-dimensional
materials as well as silicon micro- and nanoelectromechanical systems.
