  We use a nonequilibrium implementation of extended dynamical mean field
theory to study the effect of dynamical screening in photo-excited Mott
insulators. The insertion of doublons and holes adds low-energy screening modes
and leads to a reduction of the Mott gap. The coupling to low-energy bosonic
modes further- more opens new relaxation channels and significantly speeds up
the thermalization process. We also consider the effect of the energy
distribution of the doped carriers on the screening.
