  We review a series of works describing thermoelectric effects in gated
disordered nanowires (field effect transistor device configuration). After
considering the elastic coherent regime characterizing sub-Kelvin temperatures,
we study the inelastic activated regime occurring at higher temperatures, where
electronic transport is dominated by phonon-assisted hops between localised
states (Mott variable range hopping). The thermoelectric effects are studied as
a function of the location of the Fermi level inside the nanowire conduction
band, notably around its edges where they become very large. We underline the
interest of using electron-phonon coupling around the band edges of large
arrays of parallel nanowires for energy harvesting and hot spot cooling at
small scales. Multiterminal thermoelectric transport and ratchet effects are
eventually considered in the activated regime.
