  As human activities expand into naturally or man-made radiation-prone
environment, the need for radiation-hardened (Rad-Hard) electronic hardware
surged. The state-of-the-art silicon-based and two-dimensional (2D) materials
based Rad-Hard transistors can withstand up to 1 Mrad (Si) of total ionization
dose (TID), while higher TID tolerance is being heatedly sought after. Here we
present few-layer MoS$_2$ Rad-Hard field-effect transistors (FETs) with polymer
solid electrolyte (PSE) gate dielectrics. The MoS$_2$ PSE-FETs exhibit a TID
tolerance of up to 3.75 Mrad (Si) at a dose rate of 523 rad (Si) s$^{-1}$ and
can be repaired with a moderate thermal annealing at 100 $^{\circ}$C for 5
minutes. Combining the excellent intrinsic radiation tolerance and the
reparability, the MoS$_2$ PSE-FETs reach a TID tolerance of up to 10 Mrad (Si).
Complementary metal-oxide-semiconductor (CMOS)-like MoS$_2$ PSE-inverters have
been built and show similar high radiation tolerance. Furthermore, the
feasibility of wafer-scale Rad-Hard PSE-inverter array has been demonstrated
using chemical vapor deposition (CVD) grown monolayer MoS$_2$. Our studies
uncover the potential of 2D materials based PSE devices in future Rad-Hard
integrated circuits (ICs).
