  We present a theoretical study of momentum-resolved tunneling between
parallel two-dimensional conductors whose charge carriers have a
(pseudo-)spin-1/2 degree of freedom that is strongly coupled to their linear
orbital momentum. Specific examples are single and bilayer graphene as well as
single-layer molybdenum disulphide. Resonant behavior of the differential
tunneling conductance exhibited as a function of an in-plane magnetic field and
bias voltage is found to be strongly affected by the (pseudo-)spin structure of
the tunneling matrix. We discuss ramifications for the direct measurement of
electronic properties such as Fermi surfaces and the dispersion curves.
Furthermore, using a graphene double-layer structure as an example, we show how
magneto-tunneling transport can be used to measure the pseudo-spin structure of
tunnel matrix elements, thus enabling electronic characterization of the
barrier material.
