  We present here results of atomistic theory of electrons confined by metallic
gates in a single layer of transition metal dichalcogenides. The electronic
states are described by the tight-binding model and computed using a
computational box including up to million atoms with periodic boundary
conditions and parabolic confining potential due to external gates embedded in
it. With this methodology applied to MoS2, we find a twofold degenerate energy
spectrum of electrons confined in the two non-equivalent K-valleys by the
metallic gates as well as six-fold degenerate spectrum associated with
Q-valleys. We compare the electron spectrum with the energy levels of electrons
confined in GaAs/GaAlAs and in self-assembled quantum dots. We discuss the role
of spin splitting and topological moments on the K and Q valley electronic
states in quantum dots with sizes comparable to experiment.
