  This work presents methods of controlling the density of self-assembled CdTe
quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are
discussed: increasing the deposition temperature of CdTe and the reduction of
CdTe layer thickness. Photoluminescence (PL) measurements at low temperature
confirms that both methods can be used for significant reduction of QDs density
from 10$^{10}$QD/cm$^2$ to 10$^7$-10$^8$QD/cm$^2$. For very low QDs density,
identification of all QDs lines observed in the spectrum is possible.
