  Monolayer graphene has been grown on crystallized Cu (111) films on standard
oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity
(>97% coverage), with immeasurable defects (>95% defect-negligible) across the
entire wafer. Key to these results is the phase transition of evaporated copper
films from amorphous to crystalline at the growth temperature as corroborated
by X-ray diffraction and electron backscatter diffraction. Noticeably, phase
transition of copper film is observed on technologically ubiquitous oxidized Si
wafer where the oxide is a standard amorphous thermal oxide. Ion mass
spectroscopy indicates that the copper films can be purposely hydrogen-enriched
during a hydrogen anneal which subsequently affords graphene growth with a sole
carbonaceous precursor for low defect densities. Owing to the strong hexagonal
lattice match, the graphene domains align to the Cu (111) domains, suggesting a
pathway for increasing the graphene grains by maximizing the copper grain
sizes. Fabricated graphene transistors on a flexible polyimide film yield a
peak carrier mobility ~4,930 cm2/Vs.
