  The stacked two layered materials with a lattice constant mismatch and/or
with twist angle relative to each other can create a moir\'e pattern,
modulating the electronic properties of the pristine materials. Here, we
combine scanning tunneling microscopy/spectroscopy and density functional
theory calculations to investigate the moir\'e potential induced bandgap tuning
in InSe/CuSe vertical heterostructure synthesized by a two-step of molecular
beam epitaxy. Scanning tunneling microscopy measurements demonstrate the
heterostructure with a superlattice periodicity of ~3.48nm and a twist angle of
about 11{\deg} between the monolayers. Scanning tunneling spectroscopy record
on the different stacking sites of the heterostructure reveals the bandgap of
the InSe is location-dependent and a variation of 400 meV is observed. Density
functional theory calculations reveal that the moir\'e-induce electric dipole
in the monolayer InSe is the key factor for tuning the bandgap. Besides, charge
transfer between CuSe and InSe also contributes to the bandgap variation due to
its stacking related. We also show that the moir\'e potential not only can tune
the bandgap of InSe but also can vanish the Dirac nodal line of CuSe in some
stackings. Our explorations provide valuable information in understanding the
electronic properties of the twodimensional moir\'e materials.
