  We theoretically study the nonlinear optical response and photoexcited states
of the Mott insulators. The nonlinear optical susceptibility \chi^(3) is
calculated by using the exact diagonalization technique on small clusters. From
the systematic study of the dependence of \chi^(3) on dimensionality, we find
that the spin-charge separation plays a crucial role in enhancing \chi^(3) in
the one-dimensional (1D) Mott insulators. Based on this result, we propose a
holon-doublon model, which describes the nonlinear response in the 1D Mott
insulators. These findings show that the spin-charge separation will become a
key concept of optoelectronic devices.
