  Diffraction of light sets the fundamental limit for optical lithography. Many
quantum lithography schemes have so far been proposed to overcome this limit
either by making use of highly entangled photons, multi-photon processes or
multiple Lambda transitions, which are all experimentally high-demanding.
Recently, Liao et al. proposed a novel quantum lithography scheme which merely
employs Rabi oscillation to surpass the diffraction limit. Here we report a
faithful experimental realization of this scheme. Resolution up to ninth of the
Rayleigh diffraction limit has been observed. Possibility of creating an
arbitrary pattern is also tested experimentally by demonstrating the peak
narrowing process using several Rabi floppings together with state-selective
optical depletion. Our work may have direct applications in atom pattern
engineering for quantum information or quantum simulation applications, and
will also possibly boost the adoption of quantum lithography into real-world
applications in the near future.
