  The temperature ($\it T$) dependence of electrical resistivity in graphene
has been experimentally investigated between 10 and 400 K for samples prepared
on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene
shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above
a substrate-dependent transition temperature. The results are explained by
remote interfacial phonon scattering by surface optical phonons at the
substrates. The use of an appropriate substrate can lead to a significant
improvement in the charge transport of graphene.
