  Based on the parameters from published ab-inito theoretical and experimental
studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC)
simulations, a framework of multi-scale modeling is developed to investigate
the long-term evolution of displacement damage induced by heavy-ion irradiation
in cubic silicon carbide. The isochronal annealing after heavy ion irradiation
is simulated, and the annealing behaviors of total interstitials are found
consistent with previous experiments. Two annealing stages below 600K and one
stage above 900K are identified. The mechanisms for those recovery stages are
interpreted by the evolution of defects. The influence of the spatial
correlation in primary damage on defect recovery has been studied and found
insignificant when the damage dose is high enough, which sheds light on the
applicability of approaches with mean-field approximation to the long-term
evolution of damage by heavy ions in SiC.
