  The first selective growth of graphenic carbon thin films on silicon dioxide
is reported. A preliminary e-beam exposure of the substrate is found to
strongly affect the process of such films growth. The emphasis is placed on the
influence of substrate exposure on the rate of carbon deposition. The
explanation of this effect is proposed. The data of electrical and optical
measurements and the results of atomic force and scanning electron microscopy
and Raman spectroscopy studies are reported. The results suggest that the
selective growth of graphenic carbon thin films on an irradiated SiO2/Si
substrate is a promising approach to producing a microstructure at the
pre-synthesis step without full lithography process.
