  It has been shown recently that in spin precession experiments, the
interaction of spins with localized states can change the response to a
magnetic field, leading to a modified, effective spin relaxation time and
precession frequency. Here, we show that also the shape of the Hanle curve can
change, so that it cannot be fitted with the solutions of the conventional
Bloch equation. We present experimental data that shows such an effect arising
at low temperatures in epitaxial graphene on silicon carbide with localized
states in the carbon buffer layer. We compare the strength of the effect
between materials with different growth methods, epitaxial growth by
sublimation and by chemical vapor deposition. The presented analysis gives
information about the density of localized states and their coupling to the
graphene states, which is inaccessible by charge transport measurements and can
be applied to any spin transport channel that is coupled to localized states.
