  In inversion-asymmetric semiconductors, spin-orbit coupling induces a
k-dependent spin splitting of valence and conduction bands, which is a
well-known cause for spin decoherence in bulk and heterostructures.
Manipulating nonequilibrium spin coherence in device applications thus requires
understanding how valence and conduction band spin splitting affects carrier
spin dynamics. This paper studies the relevance of this decoherence mechanism
for collective intersubband spin-density excitations (SDEs) in quantum wells. A
density-functional formalism for the linear spin-density matrix response is
presented that describes SDEs in the conduction band of quantum wells with
subbands that may be non-parabolic and spin-split due to bulk or structural
inversion asymmetry (Rashba effect). As an example, we consider a 40 nm
GaAs/AlGaAs quantum well, including Rashba spin splitting of the conduction
subbands. We find a coupling and wavevector-dependent splitting of the
longitudinal and transverse SDEs. However, decoherence of the SDEs is not
determined by subband spin splitting, due to collective effects arising from
dynamical exchange and correlation.
