  We describe a new means for electrically creating spin polarization in
semiconductors. In contrast to spin injection of electrons by tunneling through
a reverse-biased Schottky barrier, we observe spin accumulation at the
metal/semiconductor interface of forward-biased ferromagnetic Schottky diodes,
which is consistent with a theory of spin-dependent reflection off the
interface. Spatiotemporal Kerr microscopy is used to image the electron spin
and the resulting dynamic nuclear polarization that arises from the non
equilibrium carrier polarization.
