  We perform detailed magnetotransport studies on two-dimensional electron
gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify
the electron mobility limiting mechanisms in this increasingly important
materials system. By analyzing data from 26 wafers with different
heterostructure growth profiles we observe a strong correlation between the
background oxygen concentration in the Si quantum well and the maximum
mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000
cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator
transition at a critical density 0.46 x 10^11/cm^2. We extract a valley
splitting of approximately 150 microeV at a magnetic field of 1.8 T. These
results provide evidence that undoped Si/SiGe heterostructures are suitable for
the fabrication of few-electron quantum dots.
