  Two-dimensional layered materials offer the possibility to create artificial
vertically stacked structures possessing an additional degree of freedom -
$the$ $interlayer$ $twist$. We present a comprehensive optical study of
artificially stacked bilayers (BLs) MoS$_2$ encapsulated in hexagonal BN with
interlayer twist angle ranging from 0 to 60 degrees using Raman scattering and
photoluminescence spectroscopies. It is found that the strength of the
interlayer coupling in the studied BLs can be estimated using the energy
dependence of indirect emission versus the A$_\textrm{1g}$-E$_\textrm{2g}^1$
energy separation. Due to the hybridization of electronic states in the valence
band, the emission line related to the interlayer exciton is apparent in both
the natural (2H) and artificial (62$^\circ$) MoS$_2$ BLs, while it is absent in
the structures with other twist angles. The interlayer coupling energy is
estimated to be of about 50 meV. The effect of temperature on energies and
intensities of the direct and indirect emission lines in MoS$_2$ bilayers is
also quantified.
