  The structure, magnetic and transport properties of thin films of the Heusler
ferrimagnet Mn_{2}CoAl have been investigated for properties related to spin
gapless semiconductors. Oriented films were grown by molecular beam epitaxy on
GaAs substrates and the structure was found to transform from tetragonal to
cubic for increasing annealing temperature. The anomalous Hall resistivity is
found to be proportional to the square of the longitudinal resistivity and
magnetization expected for a topological Berry curvature origin. A delicate
balance of the spin-polarized carrier type when coupled with voltage
gate-tuning could significantly impact advanced electronic devices.
