  Diluted ferromagnetic III-V semiconductors typically show a high degree of
compensation. Compensation is connected to the presence of comparable densities
of charged defects of either sign. This naturally leads to the development of
strong correlations between defect positions during growth and annealing. We
show that these correlations are required to understand the experimentally
observed transport and magnetic properties as well as the persistence of the
energy gap upon doping with magnetic ions.
