  Predictive first-principles calculations suggest graphitic-like GaN to be
theoretically possible. Thus far, it has not been experimentally reported. We
report on GaN monolayer in a buckled geometry obtained in confinement at
graphene/SiC interface by metalorganic chemical vapor deposition (MOCVD).
Conductive atomic force microscopy (C-AFM) has been employed to probe vertical
current injection through the graphene/SiC interface and to establish the
uniformity of the intercalated areas. Scanning transmission electron microscopy
(S/TEM) has been employed for atomic resolution imaging and spectroscopy.
Discontinuity in the anticipated stacking sequence of graphitic-like GaN
monolayers has been exposed and reasoned as a case of simultaneous formation of
Ga-N and Ga-O bonds. The formation of Ga-O bonds acquires importance in
instigating chemical-species-specific structural selectivity in confinement at
atom-size scale.
