  We report scanning tunneling microscopy and ballistic electron emission
microscopy studies of the electronic states of the uncovered and
chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states
change when chemisorbed oxygen ions are moved into the oxide by either flood
gun electron bombardment or by thermal annealing. The former, if sufficiently
energetic, results in locally well defined conduction band onsets at ~1 V,
while the latter results in a progressively higher local conduction band onset,
exceeding 2.3 V for 500 and 600 C thermal anneals.
