  The quantum oscillations of nonlinear magnetoresistance in graphene that
occurs in response to a dc current bias are investigated. We present a
theoretical model for the nonlinear magnetotransport of graphene carriers. The
model is based on the exact solution of the effective Dirac equation in crossed
electric and magnetic fields, while the effects of randomly distributed
impurities are perturbatively added. To compute the nonlinear current we
develop a covariant formulation of the migration center theory. The analysis of
the differential resistivity in the large magnetic field region, shows that the
extrema of the Shubnikov de Hass oscillations invert when the dc currents
exceeds a threshold value. This results are in good agreement with the
experimental observations. At small magnetic field, the existence of Hall
induced resistance oscillations are predicted for ultra clean graphene samples.
These oscillations originate from Landau-Zener transitions between Landau
levels, that are tilted by the strong electric Hall field.
