  The temperature driven flow lines of the Hall and dissipative
magnetoconductance data (\sigma_{xy},\sigma_{xx}) are studied in the fractional
quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As
heterostructures. The flow lines are rather well described by a recent unified
scaling theory developed for both the integer and the fractional quantum Hall
effect in a totally spin-polarized 2D electron system which predicts that one
(\sigma_{xy},\sigma_{xx}) point determines a complete flow line.
