  Low-power designs are a necessity with the increasing demand of portable
devices which are battery operated. In many of such devices the operational
speed is not as important as battery life. Logic-in-memory structures using
nano-devices and adiabatic designs are two methods to reduce the static and
dynamic power consumption respectively. Magnetic tunnel junction (MTJ) is an
emerging technology which has many advantages when used in logic-in-memory
structures in conjunction with CMOS. In this paper, we introduce a novel
adiabatic hybrid MTJ/CMOS structure which is used to design AND/NAND, XOR/XNOR
and 1-bit full adder circuits. We simulate the designs using HSPICE with 32nm
CMOS technology and compared it with a non-adiabatic hybrid MTJ/CMOS circuits.
The proposed adiabatic MTJ/CMOS full adder design has more than 7 times lower
power consumtion compared to the previous MTJ/CMOS full adder.
