  In this work, we resolved some controversial issues on the
Bloch-Gr\"{u}neisen (BG) temperature in doped graphene via analytical and
numerical calculations based on full inelastic electron-acoustic-phonon (EAP)
scattering rate and various approximation schemes. Analytic results for BG
temperature obtained by semi-inelastic (SI) approximation (which gives
scattering rates in excellent agreement with the full inelastic scattering
rates) are compared with those obtained by quasi-elastic (QE) approximation and
the commonly adopted value of $\Theta^{LA}_{F} = 2\hbar v_{LA} k_F/k_B$. It is
found that the commonly adopted BG temperature in graphene ($\Theta^{LA}_{F}$)
is about 5 times larger than the value obtained by the QE approximation and
about 2.5 times larger than that by the SI approximation, when using the
crossing-point temperature where low-temperature and high-temperature limits of
the resistivity meet. The corrected analytic relation based on SI approximation
agrees extremely well with the transition temperatures determined by fitting
the the low- and high-$T$ behavior of available experimental data of graphene's
resistivity. We also introduce a way to determine the BG temperature including
the full inelastic EAP scattering rate and the deviation of electron energy
from the chemical potential ($\mu$) numerically by finding the maximum of
$\partial \rho(\mu,T)/\partial T$. Using the analytic expression of
$\Theta_{BG,1}$ we can prove that the normalized resistivity defined as
$R_{1}=\rho(\mu,T)/\rho(\mu,\Theta_{BG,1})$ plotted as a function of
$(T/\Theta_{BG,1})$ is independent of the carrier density. Applying our results
to previous experimental data extracted shows a universal scaling behavior,
which is different from previous studies.
