  Electron collimation via a graphene pn-junction allows electrostatic control
of ballistic electron trajectories akin to that of an optical circuit. Similar
manipulation of novel correlated electronic phases in twisted-bilayer graphene
(tBLG) can provide additional probes to the underlying physics and device
components towards advanced quantum electronics. In this work, we demonstrate
collimation of the electron flow via gate-defined moir\'e barriers in a tBLG
device, utilizing the band-insulator gap of the moir\'e superlattice. A single
junction can be tuned to host a chosen combination of conventional pseudo
barrier and moir\'e tunnel barriers, from which we demonstrate improved
collimation efficiency. By measuring transport through two consecutive moir\'e
collimators separated by 1 um, we demonstrate evidence of electron collimation
in tBLG in the presence of realistic twist-angle inhomogeneity.
