  We calculate the temperature dependent resistivity in spin-split subbands
induced by the inversion asymmetry of the confining potential in GaAs 2D hole
systems. By considering both temperature dependent multisubband screening of
impurity disorder and hole-hole scattering we find that the strength of the
metallic behavior depends on the symmetry of the confining potential (i.e.,
spin-splitting) over a large range of hole density. At low density above the
metal-insulator transition we find that effective disorder reduces the
enhancement of the metallic behavior induced by spin-splitting. Our theory is
in good qualitative agreement with existing experiments.
