  Defects in planar and vertically oriented nanographitic structures (NGSs)
synthesized by plasma enhanced chemical vapor deposition (PECVD) has been
investigated using Raman and X-ray photoelectron spectroscopy. While Raman
spectra reveal the dominance of vacancy and boundary type defects respectively
in vertical and planar NGSs, XPS provides additional information on vacancy
related defect peaks at C 1s spectrum that originate from non-conjugated carbon
atoms in hexagonal lattice. Although an excellent correlation prevails between
these two techniques, our results show that estimation of surface defects by
XPS is more accurate than Raman analysis. Nuances of these techniques are
discussed in the context of assessing defects in nanographitic structures.
