  Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of
Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a
non-conducting diamond layer, which itself is situated on a Silicon wafer. This
structure is then shaped into Hall-bar devices of various dimensions using
optical lithography and dry-etching techniques. The devices' electrical
properties are investigated at various temperatures using a cryogen-free
dilution refrigerator.
