  We have fabricated graphene nano-ribbon field-effect transistor devices and
investigated their electrical properties as a function of ribbon width. Our
experiments show that the resistivity of a ribbon increases as its width
decreases, indicating the impact of edge states. Analysis of temperature
dependent measurements suggests a finite quantum confinement gap opening in
narrow ribbons. The electrical current noise of the graphene ribbon devices at
low frequency is found to be dominated by the 1/f noise.
