  We have embedded a physically defined p-channel silicon MOS quantum dot (QD)
device into an impedance transformer RC circuit. To decrease the parasitic
capacitance and surpass the cutoff frequency of the device which emerges in MOS
devices that have a top gate and act as RC low-pass filter, we fabricate a new
device to reduce the device's top gate area from 400 $\mbox{$\mu$m}^2$ to 0.09
$\mbox{$\mu$m}^2$. Having a smaller top gate eliminates the cutoff frequency
problem preventing the RF signal from reaching QD. We show that we have
fabricated a single QD properly, which is essential for RF single-electron
transistor technique. We also analyze and improve the impedance matching
condition and show that it is possible to perform readout of charge transition
at 4.2 K by RF reflectometry, which will get us to fast readout of charge and
spin states.
