  Few layer phosphorene(FLP) devices are extensively studied due to its unique
electronic properties and potential applications on nano-electronics . Here we
present magnetotransport studies which reveal electron-electron interactions as
the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP
devices. From weak localization measurements, we estimate the electron
dephasing length to be 30 to 100 nm at low temperatures, which exhibits a
strong dependence on carrier density n and a power-law dependence on
temperature (~T-0.4). These results establish that the dominant scattering
mechanism in FLP is electron-electron interactions.
