  The magnetic damping constant is a critical parameter for magnetization
dynamics and the efficiency of memory devices and magnon transport. Therefore,
its manipulation by electric fields is crucial in spintronics. Here, we
theoretically demonstrate the voltage-control of magnetic damping in ferro- and
ferrimagnetic-insulator (FI)/topological-insulator (TI) bilayers. Assuming a
capacitor-like setup, we formulate an effective dissipation torque induced by
spin-charge pumping at the FI/TI interface as a function of an applied voltage.
By using realistic material parameters, we find that the effective damping for
a FI with 10nm thickness can be tuned by one order of magnitude under the
voltage with 0.25V. Also, we provide perspectives on the voltage-induced
modulation of the magnon spin transport on proximity-coupled FIs.
