  The spin-orbit torque (SOT) arising from materials with large spin-orbit
coupling promises a path for ultra-low power and fast magnetic-based storage
and computational devices. We investigated the SOT from magnetron-sputtered
BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar
Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as
18.83, which is the largest ever reported at room temperature (RT). Moreover,
switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has
been observed with the lowest-ever switching current density reported in a
bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of
growth of the films on silicon substrate, successful growth and switching of a
perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of
BixSe(1-x) topological insulator (TI) material as a spin-current generator in
SOT-based memory and logic devices.
