  The bandgap dependence on the number of atomic layers of some families of
2D-materials, can be exploited to engineer and use lateral heterostructures
(LHs) as high-performance Field-Effect Transistors (FET). This option can
provide very good lattice matching as well as high heterointerface quality.
More importantly, this bandgap modulation with layer stacking can give rise to
steep transitions in the density of states (DOS) of the 2D material, that can
eventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETs
thanks to an energy-filtering source. We have observed this effect in the case
of a PdS2 LH-FET due to the particular density of states of its bilayer
configuration. Our results are based on ab initio and multiscale materials and
device modeling, and incite the exploration of the 2D-material design space in
order to find more abrupt DOS transitions and better suitable candidates.
