  Two-dimensional (2D) crystalline semiconductors hold promise for
next-generation electronic devices due to its atomical thickness and consequent
properties. Despite years of search, literature-reported 2D semiconductors
commonly suffered from low room-temperature charge mobility (< 200 cm2V-1s-1),
due to the dimensionality-increased 'density of scattering', undesirable
defects during fabrication and/or strong electron-phonon scattering. Therefore,
understanding charge scatterings in 2D semiconductors via computational tools
and discovering new 2D semiconductors with high mobility (> 1000 cm2V-1s-1) are
both desirable. Here we review the accurate ab initio approaches for
electron-phonon/defect/boundary scattering developed these years, and the
efforts made in high-mobility 2D semiconductor high throughput screening.
Starting from these studies, the common genome of high-mobility 2D
semiconductor are summarized and discussed, which would contribute to further
discovering of high mobility in 2D semiconductors.
