  We test the effect of an external RF field on the switching processes of
magnetic Josephson junctions (MJJs) suitable for the realization of fast,
scalable cryogenic memories compatible with Single Flux Quantum logic. We show
that the combined application of microwaves and magnetic field pulses can
improve the performances of the device, increasing the separation between the
critical current levels corresponding to logical '0' and '1'. The enhancement
of the current level separation can be as high as 80% using an optimal set of
parameters. We demonstrate that external RF fields can be used as an additional
tool to manipulate the memory states, and we expect that this approach may lead
to the development of new methods of selecting MJJs and manipulating their
states in memory arrays for various applications.
