  We study the electronic properties of a planar semiconductor-superconductor
heterostructure, in which a thin ferromagnetic insulator layer lies in between
and acts as a spin filtering barrier. We find that in such a system one can
simultaneously enhance the strengths of all the three important induced
physical quantities, i.e., Rashba spin-orbit coupling, exchange coupling, and
superconducting pairing potential, for the hybrid mode by external gating. Our
results show specific advantage of this stacked device geometry compared to
conventional devices. We further discuss how to optimize geometrical parameters
for the heterostructure and complement our numerical simulations with analytic
calculations.
