  Here, we clarify the central role of the miscut during group III-V/ group IV
crystal growth. We show that the miscut first impacts the initial antiphase
domain distribution, with two distinct nucleation-driven and terraces-driven
regimes. It is then inferred how the antiphase domain distribution mean phase
and mean lateral length are affected by the miscut. An experimental
confirmation is given through the comparison of antiphase domain distributions
in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The
antiphase domain burying step of GaP/Si samples is then observed at the atomic
scale by scanning tunneling microscopy. The steps arising from the miscut allow
growth rate imbalance between the two phases of the crystal and the growth
conditions can deeply modify the imbalance coefficient, as illustrated with
GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration
can be achieved even on low miscut substrates.
