  The interest in the ferroelectric non-volatile memory as a candidate for low
power consumption electronic memories was raised after the discovery of
ferroelectricity in hafnium oxide. Doping by different elements of hafnia films
allows improving their ferroelectric properties. In this work, the transport
experiments are combined with the simulations to study the evolution of
ferroelectric properties and the mean distance between oxygen vacancies during
the endurance of hafnium-zirconium oxide in metal-ferroelectric-metal
structures to study the impact of different metal electrodes.
