  This paper reports on the characterisation with Transient Current Technique
measurements of the charge collection and depletion depth of a radiation-hard
high-voltage CMOS pixel sensor produced at ams AG. Several substrate
resistivities were tested before and after proton irradiation with two
different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV
Cyclotron at Bern Inselspital.
