  High-impedance resonators are a promising contender for realizing
long-distance entangling gates between spin qubits. Often, the fabrication of
spin qubits relies on the use of gate dielectrics which are detrimental to the
quality of the resonator. Here, we investigate loss mechanisms of
high-impedance NbTiN resonators in the vicinity of thermally grown
SiO\textsubscript{2} and Al\textsubscript{2}O\textsubscript{3} fabricated by
atomic layer deposition. We benchmark the resonator performance in elevated
magnetic fields and at elevated temperatures and find that the internal quality
factors are limited by the coupling between the resonator and two-level systems
of the employed oxides. Nonetheless, the internal quality factors of
high-impedance resonators exceed $10^3$ in all investigated oxide
configurations which implies that the dielectric configuration would not limit
the performance of resonators integrated in a spin-qubit device. Because these
oxides are commonly used for spin qubit device fabrication, our results allow
for straightforward integration of high-impedance resonators into spin-based
quantum processors. Hence, these experiments pave the way for large-scale,
spin-based quantum computers.
