  The influence of indium percentage on dynamical characteristics of
InxGa1-xAs/GaAs(001) quantum dot lasers (QDLs) is investigated. Energy levels
of self-organized truncated-cone-shape QDs are calculated by means of the
eight-band k.p model, and their dependence to indium percentage is surveyed.
Then, by presenting a three-level model and numerical solution of the resulting
rate equations, laser properties are determined. Our results show that
inclusion of more indium gives rise in the reduced energy gap and electron-hole
recombination energy. Moreover, lasing process for both Ground State (GS) and
Excited States (ES) sound to be sensitive to indium percentage. It is shown
that rise of indium percentage at fixed injected current results in the
increased ES turn-on delay and GS photon number and 3dB modulation bandwidth,
and decreased ES photon number, GS turn on delay, amplitude of relaxation
oscillations, output power, and ES 3dB modulation bandwidth; but has no effect
on threshold current and laser gain. At last, we find an optimized cavity
length which was likely to be independent of indium percentage. Keywords: QD
lasers; Engineering energy levels; Small signal modulation; Nanocrystalline
materials; Indium component
