  Current-driven magnetization reversal in a ferromagnetic semiconductor based
(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Magnetoresistance measurements combined with current pulse application on a
rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs
at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the
presence of spin-orbit interaction in the p-type semiconductor system. Possible
mechanisms responsible for the effect are discussed.
