  We explore proximity effects on transition metal dichalcogenide ribbons
deposited on antiferromagnetic (AFM) insulating substrates. We model these
hybrid heterostructures using a tight-binding model that incorporates exchange
and Rashba fields induced by proximity to the AFM material. The robust edge
states that disperse in the midgap of the dichalcogenide are strongly affected
by induced exchange fields that reflect different AFM ordering in the
substrate. This results in enhanced spin-orbit coupling effects and complex
spin projection content for states on zigzag ribbon edges. Gated systems that
shift the Fermi level in the midgap range are also shown to exhibit spin
polarized currents on these edges. Antiparallel exchange fields along the edge
results in spin currents that can reverse polarization with the applied field.
The added functionality of these hybrid structures can provide spintronic
devices and versatile platforms to further exploit proximity effects in diverse
material systems.
