  The controlled generation and manipulation of atom-like defects in solids has
a wide range of applications in quantum technology. Although various defect
centres have displayed promise as either quantum sensors, single photon
emitters or light-matter interfaces, the search for an ideal defect with
multi-functional ability remains open. In this spirit, we investigate here the
optical and spin properties of the V1 defect centre, one of the silicon vacancy
defects in the 4H polytype of silicon carbide (SiC). The V1 centre in 4H-SiC
features two well-distinguishable sharp optical transitions and a unique S=3/2
electronic spin, which holds promise to implement a robust spin-photon
interface. Here, we investigate the V1 defect at low temperatures using optical
excitation and magnetic resonance techniques. The measurements, which are
performed on ensemble, as well as on single centres, prove that this centre
combines coherent optical emission, with up to 40% of the radiation emitted
into the zero-phonon line (ZPL), a strong optical spin signal and long spin
coherence time. These results single out the V1 defect in SiC as a promising
system for spin-based quantum technologies.
