  In the past few years there has been a surge in the material science
engineering in order to synthesize bulk insulating and surface metallic
Topological Insulating (TI) materials. This quest is not only theoretically
important but also promising from the novel application perspective. The
dependence of temperature on resistance (R-T) of a particular sample reveals a
plethora of information about the electronic properties especially in a unique
sample like TI where there are two components comprising of an insulating bulk
and metallic surface states. Depending on the amount of intrinsic doping during
the sample formation, the bulk can either couple or remain decoupled with the
surface. The former leads to a metallic R-T profile whereas the latter is
captured by an insulating R-T behavior. These two behaviors can be represented
by series and parallel resistor models respectively. In this work we study the
R-T behavior in the framework of resistor models capturing the essential
features of our sample.
