  Context: The detection of narrow SiO lines toward the young shocks of the
L1448-mm outflow has been interpreted as a signature of the magnetic precursor
of C-shocks. In contrast with the low SiO abundances (<10E-12) in the ambient
gas, the narrow SiO emission at almost ambient velocities reveals enhanced SiO
abundances of 10E-11. This enhancement has been proposed to be produced by the
sputtering of the grain mantles at the first stages of C-shocks. However,
modelling of the sputtering of grains has usually averaged the SiO abundances
over the dissipation region of C-shocks, which cannot explain the recent
observations. Aims: To model the evolution of the gas phase abundances of SiO,
CH3OH and H2O, produced by the sputtering of grains as the shock propagates
through the ambient gas. Methods: We propose a parametric model to describe the
physical structure of C-shocks as a function of time. Using the known
sputtering yields for water mantles (with minor constituents like silicon and
CH3OH) and olivine cores by collisions with H2, He, C, O, Si, Fe and CO, we
follow the evolution of the abundances of silicon, CH3OH and H2O ejected from
grains. Results: The evolution of these abundances shows that CO seems to be
the most efficient sputtering agent in low velocity shocks. The velocity
threshold for the sputtering of silicon from the grain mantles is reduced by
5-10 km s-1 by CO compared to other models. The sputtering by CO can generate
SiO abundances of 10E-11 at the early stages of low velocity shocks, consistent
with those observed in the magnetic precursor of L1448-mm. Our model also
satisfactorily reproduce the progressive enhancement of SiO, CH3OH and H2O
observed in this outflow by the coexistence of two shocks with vs=30 and
60kms-1 within the same region.
