  In this work we study, theoretically, electronic mobility of the silicon
carbide semiconductor in the 3C phase, named 3C-SiC. 3C-SiC has shown great
potential for applications in extreme conditions. Thus, the study of the
electronic mobility of this semiconductor is of great interest. In this work
were theoretically deduced: drift velocity, displacement and mobility of the
charge carriers in the n-type doped 3C-SiC semiconductor, subjected to a
constant electric field. The dependence of these transport properties as a
function of the intensity of the electric field and temperature was analyzed.
For this, a differential equation of motion was used with a source term (low
intensity electric fields) and a term of resistance to movement (electrical
resistance).
