  We have fabricated epitaxial films of CeTiO3 (CTO) on (001)oriented
SrTiO3(STO) substrates, which exhibit highly insulating and diamagnetic
properties. X-ray photoelectron spectroscopy (XPS) was to establish the 3+
valence state of the Ve and Ti ions. Furthermore, we also fabricated delta
(CTO) doped LatiO3 (LTO)-STO thin films which exhibit variety of interesting
properties including Kondo effect and spin orbit interaction (SOI) at low
temperatures. SOI shows a non-monotonic behaviour as the thickness of the CTO
layer is increased and is reflected in the value of the characteristic SOI
field (B_SO) obtained from weak antilocalization fitting. The maximum value of
B_SO is 1.00 T for delta layer thickness of 6 u.c. This non-monotonic behaviour
of SOI is attributed to the strong screening of the confining potential at the
interface. The thicker CTO film in addition to the increased dielectric
constant of the STO substrate at low temperature leads to strong screening as a
result of which the electrons confined at the interface are spread deeper into
the STO bulk where it starts to populate the Ti d_xz_yz subbands; consequently
the Fermi level crosses over from the d_xy to the d_xz_yz subbands. At the
crossover region of d_xy - d_xz_yz where there is orbital mixing, SOI goes
through a maximum.
