  We develop a theory of spin orientation by electric current in (110)-grown
semiconductor quantum wells. The controversy in the factor of two from two
existed approaches is resolved by pointing out the importance of energy
relaxation in this problem. The limiting cases of fast and slow energy
relaxation relative to spin relaxation are considered for asymmetric (110)
quantum wells. For symmetricly-doped structures the effect of spin orientation
is shown to exist due to spatial fluctuations of the Rashba spin-orbit
splitting. We demonstrate that the spin orientation depends strongly on the
correlation length of these fluctuations as well as on the ratio of the energy
and spin relaxation rates. The time-resolved kinetics of spin polarization by
electric current is also governed by the correlation length being not purely
exponential at slow energy relaxation. Electrical spin orientation in
two-dimensional topological insulators is calculated and compared with the spin
polarization induced by the magnetic field.
