  We describe a method to automatically generate an ion implantation recipe, a
set of energies and fluences, to produce a desired defect density profile in a
solid using the fewest required energies. We simulate defect density profiles
for a range of ion energies, fit them with an appropriate function, and
interpolate to yield defect density profiles at arbitrary ion energies. Given
$N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a
given target defect density profile. Finally, we find the minimum $N$ such that
the error between the target defect density profile and the defect density
profile generated by the $N$ energy-fluence pairs is less than a given
threshold. Inspired by quantum sensing applications with nitrogen-vacancy
centers in diamond, we apply our technique to calculate optimal ion
implantation recipes to create uniform-density 1 $\mu$m surface layers of
$^{15}$N or vacancies (using $^4$He).
