  Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point
defects in semiconductors is a key resource for both initializing nuclear
quantum memories and producing nuclear hyperpolarization. DNP is therefore an
important process in the field of quantum-information processing,
sensitivity-enhanced nuclear magnetic resonance, and nuclear-spin-based
spintronics. DNP based on optical pumping of point defects has been
demonstrated by using the electron spin of nitrogen-vacancy (NV) center in
diamond, and more recently, by using divacancy and related defect spins in
hexagonal silicon carbide (SiC). Here, we describe a general model for these
optical DNP processes that allows the effects of many microscopic processes to
be integrated. Applying this theory, we gain a deeper insight into dynamic
nuclear spin polarization and the physics of diamond and SiC defects. Our
results are in good agreement with experimental observations and provide a
detailed and unified understanding. In particular, our findings show that the
defects' electron spin coherence times and excited state lifetimes are crucial
factors in the entire DNP process.
