  Rapid electron transport in the quantum well triggers many novel physical
phenomena and becomes a critical point for the high-speed electronics. Here, we
found electrical properties of the titanium oxide changed from semiconducting
to metallic as the degree of oxidation decreased and Schottky quantum well was
formed at the interface. We take the asymmetry interface electron scattering
effect into consideration when studying the electrical transport properties of
the multilayer thin films. A novel physical conductivity model for the
multilayer thin films was developed. We found electron would be transferred
from the low-mobility semiconducting and metallic conductive channels to the
high-mobility Schottky quantum well conductive channel with an in-plane applied
electric field. Electron concentration and mobility of the forming 2DEG in the
Schottky quantum well could be tuned thus the nano-devices exhibited non-linear
voltage-current curves. The differential resistivity of the nano-devices could
decrease by two orders with increasing electric field at room temperature. Weak
electron localization of electrons has been experimentally observed in our
nano-devices at low temperature, which further demonstrated the existence of
2DEG in the Schottky quantum well. Our work will provide us new physics about
the rapid electron transport in the multilayer thin films, and bring novel
functional devices for the modern microelectronic industry.
