  Noise level frequently set the basic limit on the smallest signal. New noise
reduction technology and amplifiers voltage-noise density, yet still offer high
speed, high accuracy, and low power solution. Low noise amplifiers always play
a significant role in RF technology. Hence in this paper, high linear low noise
amplifier (LNA) using cascade self-biased multiple gated transistors (MGTR) is
presented. The proposed system is covering 0.9 to 2.4 GHz applications. To
verify the functionality of the proposed LNA as a bottleneck of RF technology,
a cascade LNA without MGTR is implemented and synthesized. The comparison has
been done with the single-gate LNA. From the synthesized result, proposed LNA
obtained 10 dBm third-order input intercept point (IIP3) in compare with
single-gate LNA at 9dB gain. The proposed LNA is implemented in 90 nm CMOS
technology and reported 13 dBm IIP3, 1.9 dB NF and 9 dB gain while consuming
7.9 mW from 2 V supply.
