  We consider resonant scatterers with large scattering cross-sections in
graphene that are produced by a gated disk or a vacancy, and show that a gated
ring can be engineered to produce an efficient electron cloak. We also
demonstrate that this same scheme can be applied to tune the direction of
electron flow. Our analysis is based on a partial-wave expansion of the
electronic wave-functions in the continuum approximation, described by the
Dirac equation. Using a symmetrized version of the massless Dirac equation, we
derive a general condition for the cloaking of a scatterer by a potential with
radial symmetry. We also perform tight-binding calculations to show that our
findings are robust against the presence of disorder in the gate potential.
