  As the characteristic lengths of advanced electronic devices are approaching
the atomic scale, ab initio simulation method, with fully consideration of
quantum mechanical effects, becomes essential to study the quantum transport
phenomenon in them. However, current widely used non-equilibrium Green's
function (NEGF) approach is based on atomic basis set, which usually can only
study small system with less than 1000 atoms in practice. Here we present a
large-scale quantum transport simulation method using plane waves basis, based
on the previously developed plane wave approach (Phys. Rev. B 72, 045417). By
applying several high-efficiency parallel algorithms, such as linear-scale
ground-state density function theory (DFT) algorithm, folded spectrum method,
and filtering technique, we demonstrate that our new method can simulate the
system with several thousands of atoms. We also use this method to study
several nanowires with about 4000 copper atoms, and show how the shape and
point defect affect the transport properties of them. Such quantum simulation
method will be useful to investigate and design nanoscale devices, especially
the on-die interconnects.
