  As nascent nonlinear oscillators, nano-constriction spin Hall
nano-oscillators (SHNOs) represent a promising potential for integration into
more complicated systems such as neural networks, magnetic field sensors, and
radio frequency (RF) signal classification, their tunable high-frequency
operating regime, easy synchronization, and CMOS compatibility can streamline
the process. To implement SHNOs in any of these networks, the electrical
features of a single device are needed before designing the signal detection
CMOS circuitry. This study centers on presenting an empirical electrical model
of the SHNO based on a comprehensive characterization of the output impedance
of a single SHNO, and its available output power in the range of 2-10 GHz at
various bias currents.
