  In the present study, we have discussed the up-turn behavior in the
resistivity pattern of the topological nodal line semimetal InBi. We argued
that such nature could be generalized with a mathematical model, that can be
applied to any compounds exhibiting similar behavior. The extremely high
magnetoresistance (XMR) has also been explained by the carrier compensation in
the compound, estimated from the Hall conductivity. Moreover, from the study of
Subhnikov-de Haas (SdH) oscillation and density functional theory (DFT), we
obtained the complete three-dimensional (3D) Fermi surface topology of the
compound InBi. A detailed understanding of carriers' behavior has been
discussed using those studies. We have also unfurled the topology of each
electron and hole pocket and its possible modulation with electron and hole
doping.
