  A theoretical description of electronic Raman scattering from
GaAs/Al_{x}Ga_{1-x}As artificial atoms under the influence of an external
magnetic field is presented. Raman spectra with laser excitation energy in the
interval E_{gap}-30 meV to E_{gap} are computed in the polarized and
depolarized geometry. The polarization ratios for the collective and
single-particle excitations indicate a breakdown of the Raman polarization
selection rules once the magnetic field is switched on. A Raman intensity jump
rule at the band gap is predicted in our calculations. This rule can be a
useful tool for identifying the physical nature (charge or spin) of the
electronic excitations in quantum dots in low magnetic fields.
