  We report four probe measurements of the low field magnetoresistance in
single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy,
demonstrating clear signatures of anisotropic magnetoresistance that track the
field-dependent magnetization. A comparison with micromagnetic simulations
reveals that the principal characteristics of the magnetoresistance data can be
unambiguously attributed to the nanowire segments with a zinc blende GaAs core.
The direct correlation between magnetoresistance, magnetization and crystal
structure provides a powerful means of characterizing individual hybrid
ferromagnet/semiconductor nanostructures.
