  Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As,
(Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic
device applications because of the availability of both n- and p-type materials
and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the
same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows
paramagnetism. The origin of the different magnetic properties in the Fe-doped
III-V semiconductors remains to be elucidated. To address this issue, we use
resonant photoemission spectroscopy (RPES) and x-ray magnetic circular
dichroism (XMCD) to investigate the electronic and magnetic properties of the
Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed
Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of
ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of
the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of
(Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in
the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$)
$e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD
results suggest that the carrier-induced ferromagnetic interaction in
(Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the
Fe-doped FMSs. The experimental findings suggest that the electron occupancy of
the $e_\downarrow$ states contributes to the appearance of ferromagnetism in
the Fe-doped III-V semiconductors, for p-type as well as n-type compounds.
