  Primarily used as etch mask, single layer hydrogen silsesquioxane has never
been investigated for lift-off technique. In this article, we propose a new
technique where a single layer of hydrogen silsesquioxane, a negative tone
electron beam resist, is used to make lift-off of germanium and platinum.
Removal of exposed hydrogen silsesquioxane is tested for various concentrations
of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation
of flakes due to accumulation of matter (evaporated metal in our case) along
the sidewalls of the lift-off narrow slots. Results demonstrate potential in
applying the hydrogen silsesquioxane as a negative tone lift-off resist to
pattern nanometer scale features into germanium and platinum layers.
