  Imaging surfaces using low energy neutral atom scattering is a relatively
recent development in the field of microscopy. In this work we demonstrate that
this technique is sensitive enough to distinguish films as thin as a single
monolayer from the underlying substrate. Using collimated beams of He and Kr
atoms as an incident probe on MoS$_2$ films grown on SiO$_2$/Si substrate, we
observe systematic changes in the scattered atom flux which allows us to map
the thin MoS$_2$ films. Measurements carried out by varying incidence energy
using both He and Kr provides insights into the details of atom-surface
collision dynamics and its role in contrast generation.
