  We investigate the electronic structure of realistic partial dislocation
networks in bilayer graphene that feature annihilating, wandering, and
intersecting partial lines. We find charge accumulation states at partials that
are sensitive to Fermi energy and partial Burgers vector but not to the screw
versus edge character of the partial. These states are shown to be current
carrying, with the current density executing a spiral motion along the
dislocation line with a strong interlayer component to the current. Close to
the Dirac point localization on partials switches to localization on
intersections of partials, with a corresponding complex current flow around the
nodes.
