  We report magnetism in carbon doped ZnO. Our first-principles calculations
based on density functional theory predicted that carbon substitution for
oxygen in ZnO results in a magnetic moment of 1.78 $\mu_B$ per carbon. The
theoretical prediction was confirmed experimentally. C-doped ZnO films
deposited by pulsed laser deposition with various carbon concentrations showed
ferromagnetism with Curie temperatures higher than 400 K, and the measured
magnetic moment based on the content of carbide in the films ($1.5 - 3.0 \mu_B$
per carbon) is in agreement with the theoretical prediction. The magnetism is
due to bonding coupling between Zn ions and doped C atoms. Results of
magneto-resistance and abnormal Hall effect show that the doped films are
$n$-type semiconductors with intrinsic ferromagnetism. The carbon doped ZnO
could be a promising room temperature dilute magnetic semiconductor (DMS) and
our work demonstrates possiblity of produing DMS with non-metal doping.
