  We performed a first-principles study of the tunneling anisotropic
magneto-resistance (TAMR) in Ag(Ir,Pt)$/$MgO$/$Fe junctions. Enhanced TAMR with
ideal and skewed fourfold angular dependence is found in-plane and out-of-plane
TAMR of the system, respectively, which shows simple barrier thickness
dependency with number around 10\% in some junctions. The complex angular
dependency of the interfacial resonant states due to the spin-orbit coupling
should be responsible to the complex and enhanced TAMR found in these
junctions.
