  Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a
promising 2D-source of single photon emitters (SPEs) due to their high
brightness and robust operation at room temperature. The ability to create such
emitters with well-defined optical properties is a cornerstone towards their
integration into on-chip photonic architectures. Here, we report an effective
approach to fabricate hBN single photon emitters (SPEs) with desired emission
properties in two isolated spectral regions via the manipulation of boron
diffusion through copper during atmospheric pressure chemical vapor deposition
(APCVD)--a process we term gettering. Using the gettering technique we
deterministically place the resulting zero-phonon line (ZPL) between the
regions 550-600 nm or from 600-650 nm, paving the way for hBN SPEs with
tailored emission properties across a broad spectral range. Our ability to
control defect formation during hBN growth provides a simple and cost-effective
means to improve the crystallinity of CVD hBN films, and lower defect density
making it applicable to hBN growth for a wide range of applications. Our
results are important to understand defect formation of quantum emitters in hBN
and deploy them for scalable photonic technologies.
