  One of the ways to use graphene in field effect transistors is to introduce a
band gap by quantum confinement effect [1]. That is why narrow graphene
nanoribbons (GNRs) with width less than 50nm are considered to be essential
components in future graphene electronics. The growth of graphene on sidewalls
of SiC(0001) mesa structures using scalable photolithography was shown to
produce high quality GNR with excellent transport properties [2-7]. Such
epitaxial graphene nanoribbons are very important in fundamental science but if
GNR are supposed to be used in advanced nanoelectronics, high quality thin
(<50nm) nanoribbons should be produced on a large (wafer) scale. Here we
present a technique for scalable template growth of high quality GNR on Si-face
of SiC(0001) and provide detailed structural information along with transport
properties. We succeeded to grow GNR along both [1-100] and [11-20]
crystallographic directions. The quality of the grown nanoribbons was confirmed
by comprehensive characterization with high resolution STM, dark field LEEM and
transport measurements.
