  Spin-based devices have attracted attention as an alternative to CMOS-based
technology. However, one of the challenges in spintronics devices is reducing
the spin-switching energy in ferromagnetic (FM) materials. To address this, we
considered ferroelectric (FE) materials, which may affect the magnetic
properties of FM materials. We explored various oxide perovskites ABO$_3$ as FE
materials, onto which a Fe monolayer was placed as the FM material. We
evaluated the magnetic anisotropy energy (MAE) of the Fe monolayer while
varying the polarization of ABO$_3$. Our analysis showed that the MAE depends
on the magnetic dipole moment induced in the FE material at the interface
between the FE and FM materials due to structural modifications. Machine
learning techniques were also employed to identify universal behaviors of the
MAE in the presence of FE layers, confirming the importance of magnetic moments
near the interface in explaining the dependence of the MAE on FE materials.
