  We report quantum Hall experiments on the plateau-insulator transition in a
low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the
longitudinal resistance \rho_{xx} follow an exponential law and we extract a
critical exponent \kappa= .55 \pm .05 which is slightly different from the
established value \kappa = .42 \pm .04 for the plateau transitions. Upon
correction for inhomogeneity effects, which cause the critical conductance
\sigma_{xx}^* to depend marginally on temperature, our data indicate that the
plateau-plateau and plateau- insulator transitions are in the same universality
class.
