  We report an electric field-induced in-plane magnetoresistance of an
atomically flat paramagnetic insulator|platinum (Pt) interface at low
temperatures with an ionic liquid gate. Transport experiments as a function of
applied magnetic field strength and direction obey the spin Hall
magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our
results establish the utility of ionic gating as an alternative method to
control spintronic devices without using ferromagnets.
