  Recently, graphene is of highly interest owing to its outstanding
conductivity, mechanical strength, thermal stability, etc. Among various
graphene synthesis methods, atmosphere pressure chemical vapor deposition
(APCVD) is one of the best synthesis one due to very low diffusitivity
coefficient and a critical step for graphene-based device fabrication.
High-temperature APCVD processes for thin film productions are being recognized
in many diversity technologies such as solid-state electronic devices, in
particular, high quality epitaxial semiconductor films for silicon bipolar and
metal oxide semiconductor (MOS) transistors. Graphene-based devices exhibit
high potential for applications in flexible electronics, optoelectronics, and
energy harvesting. In this chapter, recent advances of APCVD-based graphene
synthesis and their related applications will be addressed.
