  Memory devices operating due to the fast proton transfer (PT) process are
proposed by means of the first-principles calculations. Writing an information
is performed using the electrostatic potential of the scanning tunneling
microscopy (STM). Reading an information is based on the effect of the local
magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge -
saturated with oxygen or the hydroxy group - and can be realized with the use
of the giant magnetoresistance (GMR), magnetic tunnel junction (MTJ) or
spin-transfer torque (STT) devices. The energetic barriers for the hop-forward
and -backward processes can be tuned by the distance and potential of the STM
tip. Thus, enabling to tailor the non-volatile logic states. The proposed
system enables very dense packing of the logic cells and could be used in the
random access and flash memory devices.
