  Band structure and optical properties of defect- Chalcopyrite type
semiconductor ZnIn$_2$Te$_4$ have been studied by TB-LMTO first principle
technique. The optical absorption calculation suggest that ZnIn$_2$Te$_4$ is a
direct-gap semiconductor having a band gap of 1.40 eV., which confirms the
experimentally measured value. The calculated complex dielectric-function
$\epsilon(E) = \epsilon_1(E) + i\epsilon_2(E)$ reveal distinct structures at
energies of the critical points in the Brillouin zone.
