  Nanoscale resistive memories are expected to fuel dense integration of
electronic synapses for large-scale neuromorphic system. To realize such a
brain-inspired computing chip, a compact CMOS spiking neuron that performs
in-situ learning and computing while driving a large number of resistive
synapses is desired. This work presents a novel leaky integrate-and-fire neuron
design which implements the dual-mode operation of current integration and
synaptic drive, with a single opamp and enables in-situ learning with crossbar
resistive synapses. The proposed design was implemented in a 0.18 $\mu$m CMOS
technology. Measurements show neuron's ability to drive a thousand resistive
synapses, and demonstrate an in-situ associative learning. The neuron circuit
occupies a small area of 0.01 mm$^2$ and has an energy-efficiency of 9.3
pJ$/$spike$/$synapse.
