  Bilayer graphene is a promising material for radio-frequency transistors
because its energy gap might result in a better current saturation than the
monolayer graphene. Because the great deal of interest in this technology,
especially for flexible radio-frequency applications, gaining control of it
requires the formulation of appropriate models for the drain current, charge
and capacitance. In this work we have developed them for a dual-gated bilayer
graphene field-effect transistor. A drift-diffusion mechanism for the carrier
transport has been considered coupled with an appropriate field-effect model
taking into account the electronic properties of the bilayer graphene.
Extrinsic resistances have been included considering the formation of a
Schottky barrier at the metal-bilayer graphene interface. The proposed model
has been benchmarked against experimental prototype transistors, discussing the
main figures of merit targeting radio-frequency applications.
