  The morphology of graphene on SiC {0001} surfaces formed in various
environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4
Torr of disilane is studied by atomic force microscopy, low-energy electron
microscopy, and Raman spectroscopy. The graphene is formed by heating the
surface to 1100 - 1600 C, which causes preferential sublimation of the Si
atoms. The argon atmosphere or the background of disilane decreases the
sublimation rate so that a higher graphitization temperature is required, thus
improving the morphology of the films. For the (0001) surface, large areas of
monolayer-thick graphene are formed in this way, with the size of these areas
depending on the miscut of the sample. Results on the (000-1) surface are more
complex. This surface graphitizes at a lower temperature than for the (0001)
surface and consequently the growth is more three-dimensional. In an atmosphere
of argon the morphology becomes even worse, with the surface displaying
markedly inhomogeneous nucleation, an effect attributed to unintentional
oxidation of the surface during graphitization. Use of a disilane environment
for the (000-1) surface is found to produce improved morphology, with
relatively large areas of monolayer-thick graphene.
