  We show a novel magneto-resistive effect that appears in lithographically
shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As
layers. The effect, related to a rearrangement of magnetic domain walls between
different pairs of arms in the structure, reveals as a dependence of zero-field
resistance on the direction of previously applied magnetic field. This effect
could allow designing devices with unique switching and memory properties.
