  The effect of femtosecond laser irradiation on bulk and single-layer MoS2 on
silicon oxide is studied. Optical, Field Emission Scanning Electron Microscopy
(FESEM) and Raman microscopies were used to quantify the damage. The intensity
of A1g and E2g1 vibrational modes was recorded as a function of the number of
irradiation pulses. The observed behavior was attributed to laser-induced bond
breaking and subsequent atoms removal due to electronic excitations. The
single-pulse optical damage threshold was determined for the monolayer and bulk
under 800nm and 1030nm pulsed laser irradiation and the role of two-photon
versus one photon absorption effects is discussed.
