  We consider the possibility that the electrons injected into organic
field-effect transistors are strongly correlated. A single layer of acenes can
be modelled by a Hubbard Hamiltonian similar to that used for the
kappa-(BEDT-TTF)(2)X family of organic superconductors. The injected electrons
do not necessarily undergo a transition to a Mott insulator state as they would
in bulk crystals when the system is half-filled. We calculate the fillings
needed for obtaining insulating states in the framework of the slave-boson
theory and in the limit of large Hubbard repulsion, U. We also suggest that
these Mott states are unstable above some critical interlayer coupling or
long-range Coulomb interaction.
