  The creation of fluorescent defects in silicon is a key stepping stone
towards assuring the integration perspectives of quantum photonic devices into
existing technologies. Here we demonstrate the creation, by femtosecond laser
annealing, of W and G-centers in commercial silicon on insulator (SOI)
previously implanted with 12C+ ions. Their quality is comparable to that found
for the same emitters obtained with conventional implant processes; as
quantified by the photoluminescence radiative lifetime, the broadening of their
zero-phonon line (ZPL) and the evolution of these quantities with temperature.
In addition to this, we show that both defects can be created without carbon
implantation and that we can erase the G-centers by annealing while enhancing
the W-centers' emission. These demonstrations are relevant to the deterministic
and operando generation of quantum emitters in silicon.
