  The Hall effect has been a fascinating topic ever since its discovery,
resulting in exploration of entire family of this intriguing phenomena. As the
field of topology develops and novel materials emerge endlessly over the past
few decades, researchers have been passionately debating the origins of various
Hall effects. Differentiating between the ordinary Hall effect and
extraordinary transport properties, like the anomalous Hall effect, can be
quite challenging, especially in high-conductivity materials, including those
with topological origins. In this study, we conduct a systematic and
comprehensive analysis of Hall effects by combining the semiclassical Boltzmann
transport theory with first principles calculations within the relaxation time
approximation. We first highlight some striking similarities between the
ordinary Hall effect and certain anomalous Hall effects, such as nonlinear
dependency on magnetic field and potential sign reversal of the Hall
resistivity. We then demonstrate that the Hall resistivity can be scaled with
temperature and magnetic field as well, analogue to the Kohler's rule which
scales the longitudinal resistivity under the relaxation time approximation. We
then apply this Kohler's rule for Hall resistivity to two representative
materials: ZrSiS and PtTe$_2$ with reasonable agreement with experimental
measurement. Moreover, our methodology has been proven to be applicable to the
planar Hall effects of bismuth, of perfect agreements with experimental
observations. Our research on the scaling behavior of Hall resistivity
addresses a significant gap in this field and provides a comprehensive
framework for a deeper understanding of the Hall resistance family, and thus
has potential to propel the field forward and spark further investigations into
the fascinating world of Hall effects.
