  The impurity resistivity, also known as the residual resistivity, is
calculated ab initio using multiple-scattering theory. The mean-free path is
calculated by solving the Boltzmann equation iteratively. The resistivity due
to low-symmetrical defects, such as an impurity-vacancy pair, is calculated for
the FCC host metals Al and Ag and the BCC transition metal V. Commonly, 1/f
noise is attributed to the motion of such defects in a diffusion process.
