  Rhombohedral graphite features peculiar electronic properties, including
persistence of low-energy surface bands of a topological nature. Here, we study
the contribution of electron-hole excitations towards inelastic light
scattering in thin films of rhombohedral graphite. We show that, in contrast to
the featureless electron-hole contribution towards Raman spectrum of graphitic
films with Bernal stacking, the inelastic light scattering accompanied by
electron-hole excitations in crystals with rhombohedral stacking produces
distinct features in the Raman signal which can be used both to identify the
stacking and to determine the number of layers in the film.
