  Recent results by Hoffman et al. showed that it is possible to build a
Negative Refractive Material (NIM) by interleaving InGaAs/AlInAs using current
nanofabrication technologies. Their findings provide the first experimental
proof of a negative refractive semiconductor long posited by transformation
optics. In this paper an overview on semiconductor refractive index theory and
negative refraction is presented, focusing on the results of Hoffman et al. and
the future of the subject based on the theory of Transformation Optics and its
importance to tailor materials electrodynamics properties.
