  The dependence of microwave impedance of a dc-biased Josephson Fluxonic Diode
(JFD) under application of both dc magnetic field and rf excitation is
calculated with a variety of conditions. For finite length of a JFD excited by
a very low microwave excitation below its plasma frequency, applied dc magnetic
field increases the rate of Vortex and Anti-Vortex (VAV) pair generation which
fine-tunes the microwave resistance up to several factors more than its zero
field microwave resistance (R0). Under this circumstance, adding a dc bias for
moving VAVs causes oscillation-like features in microwave impedance of JFD
either in forward or reverse bias. As a result, the microwave resistance
increases up to 30R0 in the forward bias despite the fact that damping
parameter (\b{eta}) can limit this increase. On the other hand, sharp phase
slips are seen in reverse bias mode on the reactance of overdamped JFD while
increasing the frequency or amplitude of microwave excitation leads to
unprecedented effects of resistance which is described.
