  We investigate theoretically a mechanically assisted Kondo effect and
electric charge shuttling in nanoelectromechanical single-electron transistor
(NEM-SET). It is shown that the mechanical motion of the central island (a
small metallic particle) with the spin results in the time dependent tunneling
width which leads to effective increase of the Kondo temperature. The
time-dependent oscillating Kondo temperature T_K(t) changes the scaling
behavior of the differential conductance resulting in the suppression of
transport in a strong coupling- and its enhancement in a weak coupling regimes.
The conditions for fine-tuning of the Abrikosov-Suhl resonance and possible
experimental realization of the Kondo shuttling are discussed.
