  Thin p-type Sb-doped ZnO films were grown by filtered vacuum arc deposition
(FVAD), on untreated glass samples. The arc cathode was prepared by dissolving
Sb into molten Zn. The deposition was performed with 200 A arc current, running
for 120-240 s in 0.426 Pa oxygen pressure. The film thickness was 330-500 nm.
The aotmic concentration of Sb in the films was ~1.5%, whereas the O/Zn atomic
concentration ratio was ~0.7. Sb incorporation into the polycrystalline ZnO
matrix was concluded from XRD analysis. The film resistivity (0.15-0.3 Ohm*m),
carrier density (~10^22 m^(-3)), and carrier type, were determined by Hall
effect measurements. The carrier mobility in the p-type films was in the range
(10-20)*10^(-4) m^2/V*s. The energy gap of doped films, determined from optical
tranmittance measurements, was approximately 3.39 eV.
