  By doping MgB_2 superconductor with SiC nano-particles, we have successfully
introduced pinning sites directly into the crystal lattice of MgB_2 grains
(intra-grain pinning). It became possible due to the combination of
counter-balanced Si and C co-substitution for B, leading to a large number of
intra-granular dislocations and the dispersed nano-size impurities induced by
the substitution. The magnetic field dependence of the critical current density
was significantly improved in a wide temperature range, whereas the transition
temperature in the sample MgB_2(SiC)_x having x = 0.34, the highest doping
level prepared, dropped only by 2.6 K.
