  In this work we propose the application of an enhanced radiation damage model
based on the introduction of deep level traps / recombination centers suitable
for device level numerical simulation of silicon detectors at very high
fluences (e.g. 2.0x10E16 1 MeV equivalent neutrons/cm2). We present the
comparison between simulation results and experimental data for p-type
substrate structures in different operating conditions (temperature and biasing
voltages) for fluences up to 2.2x10E16 neutrons/cm2. The good agreement between
simulation findings and experimental measurements fosters the application of
this modeling scheme to the optimization of the next silicon detectors to be
used at HL-LHC.
