  We report transport measurements down to T=60mK of SININ and SNIN structures
in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and
Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias
anomaly was observed in a metallic SININ structure. We attribute this peak of
conductance to coherent multi-reflections of electrons between the two tunnel
barriers. This conductance maximum is quantitatively fitted by the relevant
theory of mesoscopic SININ structures. When the barrier at the SN interface is
removed (SNIN structure), we observe a peak of conductance at finite voltage
accompagnied by an excess of sub-gap conductance.
