  We present theoretical analysis of Hall effect in doped Mott-Hubbard
insulator, considered as a prototype of cuprate superconductor. We consider the
standard Hubbard model within DMFT approximation. As a typical case we consider
the partially filled (hole doping) lower Hubbard band. We calculate the doping
dependence of both the Hall coefficient and Hall number and determine the value
of carrier concentration, where Hall effect changes its sign. We obtain a
significant dependence of Hall effect parameters on temperature. Disorder
effects are taken into account in a qualitative way.We also perform a
comparison of our theoretical results with some known experiments on doping
dependence of Hall number in the normal state of YBCO and Nd-LSCO,
demonstrating rather satisfactory agreement of theory and experiment. Thus the
doping dependence of Hall effect parameters obtained within Hubbard model can
be considered as an alternative to a popular model of the quantum critical
point.
