  Chalcopyrite compounds are extensively explored for their exotic topological
phases and associated phenomena in a variety of experiments. Here, we discuss
the electrical transport properties of a direct energy gap semiconductor
CdGeAs$_{2}$. The observed transverse magnetoresistance (MR) is found to be
around 136% at a temperature of 1.8 K and a magnetic field of 14 T, following
the semiclassical exponent MR $\sim$ $B^{2.18}$. The MR analysis exhibits a
violation of the Kohler rule, suggesting the involvement of multiple carriers
in the system. Below 15 K, with decreasing magnetic field, the MR increases,
leading to the well known quantum interference phenomenon weak localization
(WL). The analysis of the magnetoconductivity data based on the
Hikami-Larkin-Nagaoka (HLN) model unveils three dimensional nature of the WL
and the weak spin-orbit coupling in CdGeAs$_{2}$. The phase coherence length
follows the $L_{\phi}$ $\sim$ $T^{-0.66}$ power law, which exhibits the 3D
nature of the observed WL feature.
