  Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3
and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with
a large n-type Seebeck coefficient at room temperature (S(290K)~400 {\mu}V/K),
but the thermoelectric Figure of merit (ZT(290K) = 0.007) is small because of
high electrical resistivity and thermal conductivity ({\kappa}(290 K) ~ 2.0 W/m
K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20
{\mu}V/K) . Iridium substitution on the ruthenium site has a dramatic effect on
transport properties, which leads to a large improvement in the power factor
and corresponding Figure of merit (ZT(380 K) = 0.053), improving the efficiency
of the material by an over of magnitude.
