  This letter reports thermopower and conductivity measurements through the
metal-insulator transition for 2-dimensional electron gases in high mobility
Si-MOSFET's. At low temperatures both thermopower and conductivity show
critical behavior as a function of electron density which is very similar to
that expected for an Anderson transition. In particular, when approaching the
critical density from the metallic side the diffusion thermopower appears to
diverge and the conductivity vanishes. On the insulating side the thermopower
shows an upturn with decreasing temperature.
