  We have demonstrated effective fringe field control of one-dimensional
electron gas (1-DEG) in AlGaN/GaN lateral nanowires. The nanowires are site
controlled and formed by a combination of dry and anisotropic wet etching. The
nanowire dimensions are well controlled and can have a very high length/width
aspect ratio of 10 um/5 nm or larger. The transport is controlled by a fringe
gate and shows room temperature quantum transport where gradual filling of 1-D
subbands gets manifested as oscillations in the transconductance. The fringe
gate threshold voltage for depletion of one-dimensional electron gas is found
to increase with increasing drain voltage indicating efficient control of
1-DEG. The transport characteristics and fringe field operation are explained
by taking into account quantum capacitance in addition to the conventional
geometric capacitance. The effect of nanowire width and fringe gate position is
also discussed.
