  We report the growth of Si nanostructures, either as thin films or
nanoparticles, on graphene substrates. The Si nanostructures are shown to be
single crystalline, air stable and oxidation resistive, as indicated by the
observation of a single crystalline Si Raman mode at around 520 cm-1, a STM
image of an ordered surface structure under ambient condition, and a Schottky
junction with graphite. Ultra-thin silicon regions exhibit silicene-like
behavior, including a Raman mode at around 550 cm-1, a triangular lattice
structure in STM that has distinctly different lattice spacing from that of
either graphene or thicker Si, and metallic conductivity of up to 500 times
higher than that of graphite. This work suggests a bottom-up approach to
forming a Si nanostructure array on a large scale patterned graphene substrate
for fabricating nanoscale Si electronic devices.
