  Quantum corrections to the conductivity due to the weak localization (WL) and
the disorder-modified electron-electron interaction (EEI) are investigated for
the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 -
20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with
logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a
behavior is attributed to the interplay of the classical cyclotron motion and
the EEI effect. The Hartree part of the interaction constant is estimated
(F_/sigma = 0.44) and the WL and EEI contributions to the total quantum
correction /Delta /sigma at B = 0 are separated (/Delta /sigma_{WL} ~ 0.3/Delta
/sigma; /Delta /sigma_{EEI} ~ 0.7/Delta /sigma).
