  We theoretically study electron transport in disordered, quantum-well based,
semiconductor superlattices with structural short-range correlations. Our
system consists of equal width square barriers and quantum wells with two
different thicknesses. The two kinds of quantum wells are randomly distributed
along the growth direction. Structural correlations are introduced by adding
the constraint that one of the wells always appears in pairs. We show that such
correlated disordered superlattices exhibit a strong enhancement of their dc
conductance as compared to usual random ones, giving rise to quasi-ballistic
electron transport. Our predictions can be used to demonstrate experimentally
that structural correlations inhibit the localization effects of disorder. We
specifically describe the way superlattices should be built and experiments
should be carried out for that purpose.
