  Topological states of matter originate from distinct topological electronic
structures of materials. As for strong topological insulators (STIs), the
topological surface (interface) is a direct consequence of electronic structure
transition between materials categorized to different topological genus.
Therefore, it is fundamentally interesting if such topological character can be
manipulated. Besides tuning the crystal field and the strength of spin-orbital
coupling (e.g., by external strain, or chemical doping), there is currently
rare report on topological state induced in ordinary insulators (OIs) by the
heterostructure of OI/STI. Here we report the observation of a Dirac cone
topological surface state (TSS) induced on the Sb2Se3 layer up to 15 nm thick
in the OI/STI heterostructure, in sharp contrast with the OI/OI heterostructure
where no sign of TSS can be observed. This is evident for an induced
topological state in an OI by heterostructure.
