  Raman intensities of Si quantum dots (QDs) with up to 11,489 atoms (about 7.6
nm in diameter) for different scattering configurations are calculated. First,
phonon modes in these QDs, including all vibration frequencies and vibration
amplitudes, are calculated directly from the lattice dynamic matrix by using a
microscopic valence force field model combined with the group theory. Then the
Raman intensities of these quantum dots are calculated by using a
bond-polarizability approximation. The size effects of the Raman intensity in
these QDs are discussed in detail based on these calculations. The calculations
are compared with the available experimental observation. We are expecting that
our calculations can further stimulate more experimental measurements.
