  The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgO
interface is important to interpret the strong annealing temperature dependence
of tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunnel
junctions, which increases with annealing temperature from 20% after annealing
at 200C up to a maximum value of 112% after annealing at 350C. While the well
defined nearest neighbor ordering indicating crystallinity of the MgO barrier
does not change by the annealing, a small amount of interfacial Fe-O at the
lower Co-Fe-B / MgO interface is found in the as grown samples, which is
completely reduced after annealing at 275C. This is accompanied by a
simultaneous increase of the Fe magnetic moment and the tunnel
magnetoresistance. However, the TMR of the MgO based junctions increases
further for higher annealing temperature which can not be caused by Fe-O
reduction. The occurrence of an x-ray absorption near-edge structure above the
Fe and Co L-edges after annealing at 350C indicates the recrystallization of
the Co-Fe-B electrode. This is prerequisite for coherent tunneling and has been
suggested to be responsible for the further increase of the TMR above 275C.
Simultaneously, the B concentration in the Co-Fe-B decreases with increasing
annealing temperature, at least some of the B diffuses towards or into the MgO
barrier and forms a B2O3 oxide.
