  Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe
heterojunctions enables the depletion of the two dimensional electron gas
(2DEG) at a relatively small voltage while maintaining an extremely low level
of leakage current. A fabrication process has been developed to enable the
formation of sub-micron Au electrodes sputtered onto Si/SiGe without the need
of a wetting layer.
