  The promise enabled by BAs high thermal conductivity in power electronics
cannot be assessed without taking into account the reduction incurred when
doping the material. Using first principles calculations, we determine the
thermal conductivity reduction induced by different group IV impurities in BAs
as a function of concentration and charge state. We unveil a general trend,
where neutral impurities scatter phonons more strongly than the charged ones.
$\text{C}_{\text{B}}$ and $\text{Ge}_{\text{As}}$ impurities show by far the
weakest phonon scattering and retain BAs $\kappa$ values of over $\sim$ 1000
$\text{W}\cdot\text{K}^{-1}\cdot\text{m}^{-1}$ even up to high densities making
them ideal n-type and p-type dopants. Furthermore, going beyond the doping
compensation threshold associated to Fermi level pinning triggers observable
changes in the thermal conductivity. This informs design considerations on the
doping of BAs, and it also suggests a direct way to determine the onset of
compensation doping in experimental samples.
