  At the Faraday Discussion, in the paper titled `Neuromorphic computation with
spiking memristors: habituation, experimental instantiation of logic gates and
a novel sequence-sensitive perceptron model' it was demonstrated that a large
amount of computation could be done in a sequential way using memristor current
spikes (d.c. response). As these spikes are found in many memristors (possibly
all), this novel approach could be highly useful for fast and reproducible
memristor circuits. However, questions were raised as to whether these spikes
were actually due to memristance or merely capacitance in the circuit. In this
longer version of the Faraday Discussion response, as much information as is
available from both published and unpublished data from my lab is marshalled
together. We find that the devices are likely imperfect memristors with some
capacitance, and that the spikes are related to the frequency effect seen in
memristor hysteresis curves, thus are an integral part of memristance.
