  This work reports the strain effect on the electrical properties of highly
doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto
a 6-inch glass substrate employing an anodic bonding technique. The
experimental data shows high gauge factors of -8.6 in longitudinal direction
and 10.5 in transverse direction along the [100] orientation. The
piezoresistive effect in the highly doped 3C-SiC film also exhibits an
excellent linearity and consistent reproducibility after several bending
cycles. The experimental result was in good agreement with the theoretical
analysis based on the phenomenon of electron transfer between many valleys in
the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in
n-type 3C- SiC coupled with the elimination of the current leak to the
insulated substrate could pave the way for the development of single crystal
SiC-on-glass based MEMS applications.
