  In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a
spectroscopic study of the electrons emitted from the GaN p-cap of a
forward-biased InGaN/GaN light-emitting diode (LED), the authors observed at
least two distinct peaks in the electron energy distribution curves (EDCs),
separated by about 1.5 eV, and concluded that the only viable explanation for
the higher-energy peak was Auger recombination in the LED active region. We
present full-band Monte Carlo simulations suggesting that the higher-energy
peaks in the measured EDCs are probably uncorrelated with the carrier
distribution in the active region. This would not imply that Auger
recombination, and possibily Auger-induced leakage, play a negligible role in
LED droop, but that an Auger signature cannot be recovered from the experiment
performed on the LED structure under study. We discuss, as an alternative
explanation for the observed EDCs, carrier heating by the electric field in the
band-bending region.
