  Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD)
and resistive read-out (Resistive Silicon Detector, RSD), have brought strong
performance improvements to silicon sensors. Large signals, due to the added
gain mechanism, lead to improved temporal precision, while charge sharing,
introduced by resistive read-out, allows for achieving excellent spatial
resolution even with large pixels. LGAD- and RSD- based silicon sensors are now
adopted, or considered, in several future experiments and are the basis for
almost every next 4D-trackers. New results obtained with sensors belonging to
the second FBK production of RSD (RSD2) demonstrate how a combined resolution
of 30 ps and 30 \microns can be obtained with pixels as large as $1 \times 1 $
mm$^2$.
