  First-principles calculations are used to calculate the strain dependencies
of the binding and diffusion-activation energies for Ge adatoms on both Si(001)
and Ge(001) surfaces. Our calculations reveal that the binding and activation
energies on a strained Ge(001) surface increase and decrease, respectively, by
0.21 eV and 0.12 eV per percent compressive strain. For a growth temperature of
600 degrees C, these strain-dependencies give rise to a 16-fold increase in
adatom density and a 5-fold decrease in adatom diffusivity in the region of
compressive strain surrounding a Ge island with a characteristic size of 10 nm.
