  In this report, we demonstrate high spectral responsivity (SR) in MBE grown
epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0
1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane
sapphire substrates. MSM devices fabricated with Ni/Au contacts in an
interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm
at a bias of 4 V with a UV to visible rejection ratio > 105. The devices
exhibited very low dark current < 10 nA at 20 V and showed no persistent
photoconductivity (PPC) as evident from the sharp transients with a
photo-to-dark current ratio > 103. These results represent the state-of-art
performance for MBE-grown \b{eta}-Ga2O3 MSM solar blind detector.
