  Optoelectronic devices based on graphene and other two-dimensional (2D)
materials, such as transition metal dichalcogenides (TMDs) are the focus of
wide research interest. The characterization these emerging atomically thin
materials and devices strongly relies on a set of measurements involving both
optical and electronic instrumentation ranging from scanning photocurrent
mapping to Raman and photoluminescence (PL) spectroscopy. Furthermore,
proof-of-concept devices are usually fabricated from micro-meter size flakes,
requiring microscopy techniques to characterize them. Current state-of-the-art
commercial instruments offer the ability to characterize individual properties
of these materials with no option for the in situ characterization of a wide
enough range of complementary optical and electrical properties. Presently, the
requirement to switch atomically-thin materials from one system to another
often radically affects the properties of these uniquely sensitive materials
through atmospheric contamination. Here, we present an integrated,
multi-purpose instrument dedicated to the optical and electrical
characterization of devices based on 2D materials which is able to perform low
frequency electrical measurements, scanning photocurrent mapping, Raman,
absorption and PL spectroscopy in one single set-up. We characterize this
apparatus by performing multiple measurements on graphene, transition metal
dichalcogenides (TMDs) and Si. The performance and resolution of each
individual measurement technique is found to be equivalent to that of
commercially available instruments. Contrary to nowadays commercial systems, a
significant advantage of the developed instrument is that for the first time
the integration of a wide range of complementary opto-electronic and
spectroscopy characterization techniques is demonstrated in a single compact
unit.
