  We report on non-volatile memory devices based on multifunctional manganites.
The electric field induced resistive switching of
Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different
measurement protocols. We show that using current as the electrical stimulus
(instead of standard voltage-controlled protocols) improves the electrical
performance of our devices and unveils an intermediate resistance state. We
observe three discrete resistance levels (low, intermediate and high), which
can be set either by the application of current-voltage ramps or by means of
single pulses. These states exhibit retention and endurance capabilities
exceeding $10^4$ s and 70 cycles, respectively. We rationalize our experimental
observations by proposing a mixed scenario were a metallic filament and a
Si$O_x$ layer coexist, accounting for the observed resistive switching. Overall
electrode area dependence and temperature dependent resistance measurements
support our scenario. After device failure takes place, the system can be
turned functional again by heating up to low temperature (120 C), a feature
that could be exploited for the design of memristive devices with self-healing
functionality. These results give insight into the existence of multiple
resistive switching mechanisms in manganite-based memristive systems and
provide strategies for controlling them.
