  Computational modelling of passage of high-energy electrons through
crystalline media is carried out by means of the relativistic molecular
dynamics. The results obtained are compared with the experimental data for 855
MeV electron beam incident on oriented bent ultra-thin (15 microns) silicon and
germanium crystals. The simulations have been performed for the geometries of
the beam--crystal orientation that correspond (i) to the channeling regime and
(ii) to the volume reflection. A comparison with the experiment is carried out
in terms of angular distributions of the electrons deflected by the crystals
bent with different curvature radii as well as of the spectra of the emitted
radiation. For both crystals a good agreement between the simulated and
experimentally measured data is reported. The origin of remaining minor
discrepancies between theory and experiment is discussed.
