  Measurements of frequency dependent ferromagnetic resonance (FMR) and spin
pumping driven dc voltage (V_{dc}) are reported for amorphous films of
Fe_{78}Ga_{13}B_{9} (FeGaB) alloy to address the phenomenon of self-induced
inverse spin Hall effect (ISHE) in plain films of metallic ferromagnets. The
V_{dc} signal, which is antisymmetric on field reversal, comprises of symmetric
and asymmetric Lorentzians centered around the resonance field. Dominant role
of thin film size effects is seen in setting the magnitude of static
magnetization, V_{dc} and dynamics of magnetization precession in thinner films
(\leq 8 nm). The film thickness dependence of magnetization parameters
indicates the presence of a magnetically disordered region at the
film-substrate interface, which may promote preferential flow of spins
generated by the precessing magnetization towards the substrate. However, the
V_{dc} signal also draws contributions from rectification effects of a \approx
0.4 \% anisotropic magnetoresistance and a large (\approx 54 n\Omega.m)
anomalous Hall resistivity (AHR) of these films which ride over the effect of
spin-orbit coupling driven spin-to-charge conversion near the film-substrate
interface. We have addressed these data in the framework of the existing
theories of electrodynamics of a ferromagnetic film subjected to
radio-frequency field in a coplanar waveguide geometry. Our estimation of the
self-induced ISHE for the sample with 54 n\Omega.m AHR shows that it may
contribute significantly (\approx 90\%) to the measured symmetric voltage. This
study is expected to be very useful for fully understanding the spin pumping
induced dc voltages in metallic ferromagnets with disordered interfaces and
large anomalous Hall effect.
