  Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e.
junctions with resistances comparable to, or less than, the quantum resistance
$R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally
and theoretically. Our experimental data demonstrate that -- in agreement with
previous results on single- and double-junction systems -- Coulomb blockade
effects survive even in the strong tunneling regime and are still clearly
visible for junction resistances as low as 1 k$\Omega$. We have developed a
quasiclassical theory of electron transport in junction arrays in the strong
tunneling regime. Good agreement between the predictions of this theory and the
experimental data has been observed. We also show that, due to both heating
effects and a relatively large correction to the linear relation between the
half-width of the conductance dip around zero bias voltage, $V_{1/2}$, and the
measured electronic temperature, such arrays are inferior to those
conventionally used in the Coulomb Blockade Thermometry (CBT). Still, the
desired correction to the half-width, $\Delta V_{1/2}$, can be determined
rather easily and it is proportional to the magnitude of the conductance dip
around zero bias voltage, $\Delta G$. The constant of proportionality is a
function of the ratio of the junction and quantum resistances, $R/R_{\rm q}$,
and it is a pure strong tunneling effect.
