  It is investigated the formation of the phase composition and structure in
the nanoscaled CoSbx (30 nm) films deposited by the method of molecular-beam
epitaxy on the substrates of the oxidated monocrystalline silicon at 200 C and
following thermal treatment in vacuum in temperature range of 300-700 C. It is
established that the films after the deposition are polycrystalline without
texture. With increase in Sb content the formation of the phase composition in
the films takes place in such sequence as this is provided by phase diagram for
the bulky state of the Co-Sb system. At annealing in vacuum at temperature
above 450-500 C a sublimation not only of the crystalline Sb phase but from the
antimonides occurs.
