  We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown
\b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3
epitaxial films are characterized using capacitance-voltage profiling and
secondary-ion mass spectroscopy. Electron sheet charge density in the range of
2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm
to 3.5 nm is measured. We also demonstrate a high density (6.4e12 cm-2)
degenerate two-dimensional electron gas using a delta-doped
\b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure.The total charge could
also include a contribution from a parallel channel in the
\b{eta}-(Al0.26Ga0.74)2O3 alloy barrier.
