  Two-dimensional materials (2DMs) are fundamentally electro-mechanical
systems. Their environment unavoidably strains them and modifies their quantum
transport properties. For instance, a simple uniaxial strain could completely
turn off the conductivity of ballistic graphene or switch on/off the
superconducting phase of magic-angle bilayer graphene. Here we report
measurements of quantum transport in strained graphene which agree
quantitatively with models based on mechanically-induced gauge potentials. We
mechanically induce in-situ a scalar potential, which modifies graphene's work
function by up to 25 meV, and vector potentials which suppress the ballistic
conductivity of graphene by up to 30 % and control its quantum interferences.
To do so, we developed an experimental platform able to precisely tune both the
mechanics and electrostatics of suspended graphene transistors at
low-temperature over a broad range of strain (up to 2.6 %). This work opens
many opportunities to experimentally explore quantitative strain effects in 2DM
quantum transport and technologies.
