  We demonstrate that the terahertz/infrared radiation induced photogalvanic
effect, which is sensitive to the surface symmetry and scattering details, can
be applied to study the high frequency conductivity of the surface states in
(Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In
particular, measuring the polarization dependence of the photogalvanic current
and scanning with a micrometre sized beam spot across the sample, provides
access to (i) topographical inhomogeneity's in the electronic properties of the
surface states and (ii) the local domain orientation. An important advantage of
the proposed method is that it can be applied to study TIs at room temperature
and even in materials with a high electron density of bulk carriers.
