  The effect of hydrostatic pressure on resistivity and magnetic ac
susceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT)
ferromagnetic chalcopyrite with two types of MnAs micro-clusters. The slight
increase of temperature by about 30 K in the region between RT and Curie
temperature TC causes a significant change in the positions of pressure-induced
semiconductor-metal transition and magnetic phase transitions in low pressure
area. By conducting measurements of the anomalous Hall resistance in the field
H \leq 5 kOe, we present experimental evidence for pressure-induced
metamagnetic-like state during the paramagnetic phase at pressure P = 5 GPa.
