  In this paper, we present a new theoretical model for the dielectrophoresis
(DEP) process of the single-walled carbon nanotubes (SWCNT). We obtain a
different frequency interval for the alignment of wide energy gap semiconductor
SWCNTs which shows a considerable difference with the prevalent model. For
this, we study two specific models namely, the spherical model and the
ellipsoid model to estimate the frequency interval. Then, we perform the DEP
process and use the obtained frequencies (of spherical and ellipsoid models)
for the alignment of the SWCNTs. Our empirical results declare the theoretical
prediction, i.e., a crucial step toward the realization of carbon nanotube
field-effect transistor (CNT-FET) with the DEP process based on the ellipsoid
model.
