  The development of two-dimensional (2D) room temperature magnets is of great
significance to the practical application of spintronic devices. However, the
number of synthesized intrinsic 2D magnets is limited and the performances of
them are not satisfactory, e.g. typically with low Curie temperature and poor
environmental stability. Magnetic modulation based on developed 2D materials,
especially non-magnetic 2D materials, can bring us new breakthroughs. Herein,
we report room temperature ferromagnetism in halogenated MoS2 monolayer under
the synergistic effect of strain engineering and charge injection, and the
combined implementation of these two processes is based on the halogenation of
MoS2. The adsorbed halogen atoms X (X = F, Cl, and Br) on the surface leads to
lattice superstretching and hole injection, resulting in MoS2 monolayer
exhibiting half-metallic properties, with one spin channel being gapless in the
band structure. The Curie temperature of halogenated MoS2 monolayer is 513~615
K, which is much higher than the room temperature. In addition, large magnetic
anisotropy energy and good environmental stability make halogenated MoS2
display great advantages in practical spintronic nanodevices.
