  We report an electron-beam based method for the nanoscale patterning of the
poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned
polymer electrolyte as a high capacitance gate dielectric in single nanowire
transistors and obtain subthreshold swings comparable to conventional
metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact
overlap which reduces parasitic effects and enables multiple, independently
controllable gates. The method's simplicity broadens the scope for using
polymer electrolyte gating in studies of nanowires and other nanoscale devices.
