  We report on the theoretical electronic spectra of twisted phosphorene
bilayers exhibiting moir\'e patterns, as computed by means of a continuous
approximation to the moir\'e superlattice Hamiltonian. Our model is constructed
by interpolating between effective $\Gamma$-point conduction- and valence-band
Hamiltonians for the different stacking configurations approximately realized
across the moir\'e supercell, formulated on symmetry grounds. We predict the
realization of three distinct regimes for $\Gamma$-point electrons and holes at
different twist angle ranges: a Hubbard regime for small twist angles $\theta <
2^\circ$, where the electronic states form arrays of quantum-dot-like states,
one per moir\'e supercell; a Tomonaga-Luttinger regime at intermediate twist
angles $2^\circ < \theta \lesssim 10^\circ$, characterized by the appearance of
arrays of quasi-1D states; and finally, a ballistic regime at large twist
angles $\theta \gtrsim 10^\circ$, where the band-edge states are delocalized,
with dispersion anisotropies modulated by the twist angle. Our method correctly
reproduces recent results based on large-scale ab initio calculations at a much
lower computational cost, and with fewer restrictions on the twist angles
considered.
