  Spin Hall effect provides an efficient tool for the conversion of a charge
current into a spin current, opening the possibility of producing pure spin
currents in non-magnetic materials for the next generation of spintronics
devices. In this sense, giant Spin Hall Effect has been recently reported in Cu
doped with 0.5 % Bi grown by sputtering and larger values are expected for
larger Bi doping, according to first principles calculations. In this work we
demonstrate the possibility of doping Cu with up to 10 % of Bi atoms without
evidences of Bi surface segregation or cluster formation, as studied by
different microscopic and spectroscopic techniques. In addition, YIG/BiCu
structures have been grown, showing a spin mixing conductance larger that the
one shown by similar Pt/YIG structures. These results reflects the potentiality
of these new materials in spintronics devices.
