  We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a
low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic
fabrication. The axicon consists of circular gratings with seven stages of 1x2
multimode interferometers. We present a technique to apodize the gratings
azimuthally by breaking up the circles into arcs which successfully increased
the penetration depth in the gratings from $\approx$5 $\mu$m to $\approx$55
$\mu$m. We characterize the device's performance by coupling 1300$\pm$50 nm
swept source laser in to the chip from the axicon, and measuring the
out-coupled light from a grating coupler. Further, we also present the
implementation of balanced homodyne detection method for the spectral
characterization of the device and show that the position of the output lobe of
the axicon does not change significantly with wavelength.
