  The proposed read-out configuration D+D- for the Kane Si:P
architecture[Nature 393, 133 (1998)] depends on spin-dependent electron
tunneling between donors, induced adiabatically by surface gates. However,
previous work has shown that since the doubly occupied donor state is so
shallow the dwell-time of the read-out state is less than the required time for
measurement using a single electron transistor (SET). We propose and analyse
single-spin read-out using optically induced spin to charge transduction, and
show that the top gate biases, required for qubit selection, are significantly
less than those demanded by the Kane scheme, thereby increasing the D+D-
lifetime. Implications for singlet-triplet discrimination for electron spin
qubits are also discussed.
