  Spin gapless semiconductors are interesting novel class of materials by
embracing both magnetism and semiconducting. Its potential application in
future spintronics requires realization in thin film form. In this letter, we
report a successful growth of spin gapless Mn2CoAl films on thermally oxidized
Si substrates by magnetron sputtering deposition. The films deposited at 673K
are well oriented to (001) direction and display a uniform-crystalline surface.
Magnetotransport measurements on the oriented films reveal a
semiconducting-like resistivity, small anomalous Hall conductivity and linear
magnetoresistance (MR) representative of the transport signatures of spin
gapless semiconductors. The magnetic properties of the films have also been
investigated and compared to that of bulk Mn2CoAl, with small discrepancy
induced by the composition deviation.
