  We have analysed spin relaxation behaviour of various II-VI semiconductors
for nanowire structure and 2-D channel by simulating spin polarized transport
through a semi-classical approach. Monte Carlo simulation method has been
applied to simulate our model. D'yakanov-Perel mechanism and Elliot-Yafet
mechanism are dominant for spin relaxation in II-VI semiconductors. Variation
in spin relaxation length with external field has been analysed and comparison
is drawn between nanowire and 2-D channels. Spin relaxation lengths of various
II-VI semiconductors are compared at an external field of 1kV/cm to understand
the predominant factors affecting spin de-phasing in them. Among the many
results obtained, most noticeable one is that spin relaxation length in
nanowires is many times greater than that in 2-D channel.
