  The magnetic exchange bias between epitaxial thin films of the multiferroic
(antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft
ferromagnetic (FM) layer is used to couple the magnetic response of the
ferromagnetic layer to the magnetic state of the antiferromagnetic one. We will
show that biasing the ferroelectric YMnO3 layer by an appropriate electric
field allows modifying and controlling the magnetic exchange bias and
subsequently the magnetotransport properties of the FM layer. This finding may
contribute to pave the way towards a new generation of electric-field
controlled spintronics devices.
