  Topologically protected edge state transport in quantum materials is
dissipationless and features quantized Hall conductance, and shows great
potential in highly fault-tolerant computing technologies. However, it remains
elusive about how to develop topological edge state-based computing devices.
Recently, exploration and understanding of interfacial ferroelectricity in
various van der Waals heterostructure material systems have received widespread
attention among the community of materials science and condensed matter
physics3-11. Such ferroelectric polarization emergent at the vdW interface can
coexist with other quantum states and thus provides an unprecedented
opportunity to electrically switch the topological edge states of interest,
which is of crucial significance to the fault-tolerant electronic device
applications based on the topological edge states. Here, we report the
selective and quasi-continuous ferroelectric switching of topological Chern
insulator devices and demonstrate its promising application in noise-immune
neuromorphic computing. We fabricate this ferroelectric Chern insulator device
by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN
layers, and observe the coexistence of the interfacial ferroelectricity and the
topological Chern insulating states. This ferroelectricity exhibits an
anisotropic dependence on the in-plane magnetic field. By using a VBG pulse
with delicately controlled amplitude, we realize the nonvolatile switching
between any pair of Chern insulating states and achieve 1280 distinguishable
nonvolatile resistance levels on a single device. Furthermore, we demonstrate
deterministic switching between two arbitrary levels among the record-high
number of nonvolatile resistance levels.
