  A basic kinetic model that incorporates a coupled dynamics of the carbon
atoms and dimers on a copper surface is used to compute growth of a
single-layer graphene island. The speed of the island's edge advancement on
Cu[111] and Cu[100] surfaces is computed as a function of the growth
temperature and pressure. Spatially resolved concentration profiles of the
atoms and dimers are determined, and the contributions provided by these
species to the growth speed are discussed. Island growth in the conditions of a
thermal cycling is studied.
