  We measure the transmission secondary electron yield of nanometer-thick
Al$_2$O$_3$/TiN/Al$_2$O$_3$ films using a prototype version of a Timed Photon
Counter (TiPC). We discuss the method to measure the yield extensively. The
yield is then measured as a function of landing energy between $1.2$ and $1.8$
keV and found to be in the range of $0.1$ ($1.2$ keV) to $0.9$ ($1.8$ keV).
These results are in agreement to data obtained by a different, independent
method. We therefore conclude that the prototype TiPC is able to characterise
the thin films in terms of transmission secondary electron yield. Additionally,
observed features which are unrelated to the yield determination are
interpreted.
