  While electric and magnetic dipolar resonances in SiC have been studied in
the far-infrared, they have not been studied in the near infrared. Here we show
for the first time that electromagnetic Mie-scattering moments within SiC
metasurfaces can control the spontaneous emission process of point defects in
the near infrared. Using SiC nanopillars based metasurfaces, we theoretically
demonstrate a control over the spontaneous emission rate of embedded
color-centers by using the coherent superposition of the electric dipolar and
magnetic quadrupolar electromagnetic Mie-scattering moments of the structure.
More than an order of magnitude emission/decay rate enhancement is obtained
with the maximum enhancement close to 30. We also demonstrate that the relative
phase of the Mie-scattering moments helps in controlling the emission
directionality. SiC metasurfaces in the spectral range of color centres, from
the visible to the near infrared, can be used to control the confinement and
directionality of their spontaneous emission, increasing the opportunities to
study light-matter interaction and to advance quantum photonic and quantum
sensing device integration.
