  We use the effective g-factor of subgap states, g*, in hybrid InAs nanowires
with an epitaxial Al shell to investigate how the superconducting density of
states is distributed between the semiconductor core and the metallic shell. We
find a step-like reduction of g* and improved hard gap with reduced carrier
density in the nanowire, controlled by gate voltage. These observations are
relevant for Majorana devices, which require tunable carrier density and g*
exceeding the g-factor of the proximitizing superconductor. Additionally, we
observe the closing and reopening of a gap in the subgap spectrum coincident
with the appearance of a zero-bias conductance peak.
