  The building block of in-memory computing with spintronic devices is mainly
based on the magnetic tunnel junction with perpendicular interfacial anisotropy
(p-MTJ). The resulting asymmetric write and read-out operations impose
challenges in downscaling and direct cascadability of p-MTJ devices. Here, we
propose that a new symmetric write and read-out mechanism can be realized in
perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2
and WTe2. We demonstrate that field-free and deterministic reversal of the
perpendicular magnetization can be achieved by employing unconventional charge
to z-spin conversion. The resulting magnetic state can be readily probed with
its intrinsic inverse process, i.e., z-spin to charge conversion. Using the
PASO quantum material as a fundamental building block, we implement the
functionally complete set of logic-in-memory operations and a more complex
nonvolatile half-adder logic function. Our work highlights the potential of
PASO quantum materials for the development of scalable energy-efficient and
ultrafast spintronic computing.
