  We observe a series of sharp resonant features in the tunnelling differential
conductance of InAs quantum dots. We found that dissipative quantum tunnelling
has a strong influence on the operation of nano-devices. Because of such
tunnelling the current-voltage characteristics of tunnel contact created
between atomic force microscope tip and a surface of InAs/GaAs quantum dots
display many interesting peaks. We found that the number, position, and heights
of these peaks are associated with the phonon modes involved. To describe the
found effect we use a quasi-classical approximation. There the tunnelling
current is related to a creation of a dilute instanton-anti-instanton gas. Our
experimental data are well described with exactly solvable model where one
charged particle is weakly interacting with two promoting phonon modes
associated with external medium. We conclude that the characteristics of the
tunnel nanoelectronic devices can thus be controlled by a proper choice of
phonons existing in materials, which are involved.
