  Quantum dot arrays are a versatile platform for the implementation of spin
qubits, as high-bandwidth sensor dots can be integrated with single-, double-
and triple-dot qubits yielding fast and high-fidelity qubit readout. However,
for undoped silicon devices, reflectometry off sensor ohmics suffers from the
finite resistivity of the two-dimensional electron gas (2DEG), and alternative
readout methods are limited to measuring qubit capacitance, rather than qubit
charge. By coupling a surface-mount resonant circuit to the plunger gate of a
high-impedance sensor, we realized a fast charge sensing technique that is
compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed
charge stability diagrams of double- and triple-dot arrays in Si/SiGe
heterostructures as well as pulsed-gate single-shot charge and spin readout
with integration times as low as 2.4 $\mu$s.
