  Graphene [1] and its bilayer have generated tremendous excitement in the
physics community due to their unique electronic properties [2]. The intrinsic
physics of these materials, however, is partially masked by disorder, which can
arise from various sources such as ripples [3] or charged impurities [4].
Recent improvements in quality have been achieved by suspending graphene flakes
[5,6], yielding samples with very high mobilities and little charge
inhomogeneity. Here we report the fabrication of suspended bilayer graphene
devices with very little disorder. We observe fully developed quantized Hall
states at magnetic fields of 0.2 T, as well as broken symmetry states at
intermediate filling factors $\nu = 0$, $\pm 1$, $\pm 2$ and $\pm 3$. The
devices exhibit extremely high resistance in the $\nu = 0$ state that grows
with magnetic field and scales as magnetic field divided by temperature. This
resistance is predominantly affected by the perpendicular component of the
applied field, indicating that the broken symmetry states arise from many-body
interactions.
