  The temperature dependence of the electrical resistivity of the
heterostructures consisting of single crystalline LaMnO$_3$ samples with
different crystallographic orientations covered by the epitaxial ferroelectric
Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ film has been studied. Results obtained for the
heterostructure have been compared with the electrical resistivity of the
single crystalline LaMnO$_3$ without the film. It was found that for the
samples with the films where the polarization axis is perpendicular to the
crystal surface the electrical resistivity strongly decreases, and at the
temperature below ~160 K undergoes the insulator-metal transition. Ab-initio
calculations were also performed for the structural and electronic properties
of the BaTiO$_3$/LaMnO$_3$ heterostructure. Transition to the 2D electron gas
at the interface is shown.
