  InAs/InP quantum dots are excellent sources of telecom single-photon emission
and are among the most promising candidates for scalable quantum photonic
circuits. However, geometric differences in each quantum dot leads to slightly
different emission wavelengths and hinders the possibility of generating
multiple identical quantum emitters on the same chip. Stark tuning is an
efficient technique to overcome this issue as it can control the emission
energy of individual quantum dots through the quantum-confined Stark effect.
Realizing this technique in InAs/InP quantum dots has previously been limited
to shifts of less than 0.8 meV due to jumps in the emission energy because of
additional charges at high electric field intensities. We demonstrate up to 5.1
meV of Stark tuning in the emission wavelength of InAs/InP quantum dots. To
eliminate undesirable jumps to charged state, we use a thin oxide insulator to
prevent carrier injection from the contacts, thereby significantly improves the
tuning range of the Stark effect. Moreover, the single-photon nature and narrow
linewidth of the quantum dot emission is preserved under a wide range of
applied electric fields. Using photoluminescence intensity measurements and
time-resolved lifetime spectroscopy we confirmed that this Stark tuning range
is limited by carrier tunneling at high electric fields. This result is an
important step toward integrating multiple identical quantum emitters at
telecom wavelengths on-a-chip, which is crucial for realizing complex quantum
photonic circuits for quantum information processing.
