  We report on the formation of oriented gold nano structures on Si(100)
substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high
temperature (\approx 975^{\circ} C). Various thicknesses of gold films have
been deposited with SiOx (using high vacuum thermal evaporation) and without
SiOx (using molecular beam epitaxy) at the interface on Si(100). Electron
microscopy measurements were performed to determine the morphology, orientation
of the structures and the nature of oxide layer. Interfacial oxide layer, low
vacuum and high temperature annealing conditions are found to be necessary to
grow oriented gold structures. These gold structures can be transferred by
simple scratching method.
