  While semiconductor electronics is at heart of modern world, and now uses 5nm
or smaller processes of single atoms, it seems there are missing models of
actual electron currents in these scales - which could help with more conscious
design of future electronics. This article proposes such practical methodology
allowing to model approximated electron flows in semiconductor, nonlinear Ohm
law in p-n junction, and hopefully more complex systems e.g. built of
transistors. It assumes electron hopping between atoms using Maximal Entropy
Random Walk based diffusion - chosen accordingly to (Jaynes) maximal entropy
principle, this way leading to the same stationary probability density as
quantum models. Due to Anderson-like localization in nonhomogeneous lattice of
semiconductor, electrons are imprisoned in entopic wells, e.g. requiring to
exceed a potential barrier for conductance.
