  The dynamics of non-equilibrium spin accumulation generated in metals or
semiconductors by rf magnetic field pumping is treated within a diffusive
picture. The dc spin accumulation produced in a uniform system by a rotating
applied magnetic field or by a precessing magnetization of a weak ferromagnet
is in general given by a (small) fraction of hbar omega, where omega is the
rotation or precession frequency. With the addition of a neighboring,
field-free region and allowing for the diffusion of spins, the spin
accumulation is dramatically enhanced at the interface, saturating at the
universal value hbar omega in the limit of long spin relaxation time. This
effect can be maximized when the system dimensions are of the order of sqrt(2pi
D omega), where D is the diffusion constant. We compare our results to the
interface spin pumping theory of A. Brataas et al. [Phys. Rev. B 66, 060404(R)
(2002)].
