  Crystalline Si substrates are doped by laser annealing of solution processed
Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs)
are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser.
During laser processing the particles as well as a surface-near substrate layer
are melted to subsequently crystallize in the same orientation as the
substrate. The doping profile is investigated by secondary ion mass
spectroscopy revealing a constant B concentration of 2x10^18 cm^-3 throughout
the entire analyzed depth of 5\mu m. Four-point probe measurements demonstrate
that the effective conductivity of the doped sample is increased by almost two
orders of magnitude. The absolute doping depth is estimated to be in between
8\mu m and 100\mu m. Further, a pn-diode is created by laser doping an n-type
c-Si substrate using the Si NPs.
