  The fabrication, initial structural characterization and diode measurements
are reported for the first boron carbide / silicon carbide heterojunction
diode. Current-voltage curves obtained for operation at temperatures from 24 C
to 388 C. PECVD-deposited undoped boron carbide material is highly crystalline
and consists of a variety of polytypes of B-C with crystal sizes as large as
110 nm. Crystal phases are similar to those for PECVD B-C on Si but only
partially match known boron and boron-rich B-C phases.
