  We propose a superconducting spin-triplet valve, which consists of a
superconductor and an itinerant magnetic material, with the magnet showing an
intrinsic non-collinear order characterized by a wave vector that may be
aligned in a few equivalent preferred directions under control of a weak
external magnetic field. Re-orienting the spiral direction allows one to
controllably modify long-range spin-triplet superconducting correlations,
leading to spin-valve switching behavior. Our results indicate that the
spin-valve effect may be noticeable. This bilayer may be used as a magnetic
memory element for cryogenic nanoelectronics. It has the following advantages
in comparison to superconducting spin valves proposed previously: (i) it
contains only one magnetic layer, which may be more easily fabricated and
controlled, (ii) its ground states are separated by a potential barrier, which
solves the "half-select" problem of the addressed switch of memory elements.
