  In this paper, we demonstrate by simulation the feasibility of
electrostatically doped and therefore reconfigurable planar
field-effect-transistor (FET) structure which is based on our already
fabricated and published Si-nanowire (SiNW) devices. The technological
cornerstones for this dual-gated general purpose FET contain Schottky S/D
junctions on a silicon-on-insulator (SOI) substrate. The transistor type, i.e.
n-type or p-type FET, is electrically selectable on the fly by applying an
appropriate control-gate voltage which significantly increases the versatility
and flexibility in the design of digital integrated circuits.
