  Fe3GeTe2 is a 2-dimensional van der Waals material exhibiting itinerant
ferromagnetism upto 230 K. Here, we study aspects of scattering mechanism in
Fe3Ge2Te2 single crystals via resistivity, magneto-transport and Hall effect
measurements. The quadratic temperature dependence of electrical resistivity
below the Curie temperature hints towards the dominance of electron-magnon
scattering. A non-saturating positive magnetoresistance (MR) is observed at low
temperatures when the magnetic field is applied parallel to the sample plane.
The linear negative MR at high fields for T < TC corroborates to the
suppression in magnon population due to the damping of spin waves. In the high
temperature regime T > TC,MR can be described by the scattering from spin
fluctuations using the model described by Khosla and Fischer. Isothermal Hall
resistivity curves unveil the presence of anomalous Hall resistivity.
Correlation between MR and side jump mechanism further reveals that the
electron-magnon scattering is responsible for the side jump contribution to the
anomalous Hall effect. Our results provide a clear understanding of the role of
electron-magnon scattering on anomalous Hall effect that rules out its origin
to be the topological band structure.
