  In this manuscript, we present a field effect transistor with a channel
consisting of a two-dimensional electron gas located at the interface between
an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have
demonstrated that the two-dimensional electron gas channel is modulated by the
gate voltage. The dependence of the drain current on the drain voltage has no
saturation region, similar to a field effect transistor based on graphene.
However, the transport in this transistor is not ambipolar, as in graphene, but
unipolar.
