  The mobility formula based on deformation potential (DP) theory is of great
importance in semiconductor physics. However, the related calculations for the
DP constant are controversial. It is necessary to redo in-depth and
comprehensive research on the mobility of single crystal silicon and the
related parameters such as the effective mass and the DP constant. In this work
the conductivity effective mass is redefined and a method based on the first
principles is presented to evaluate the correction of the DP constant. It is
found that the effective mass is closer to experimental data and the correction
of the DP is a negligible value of about 0.3 eV. Using these parameters, we
obtain the mobilities of the single crystal silicon in reasonable agreement
with the experimental values. Our method can be effectively applied to the
prediction for the mobility in bulk materials.
