  We investigate theoretically how the spin-orbit Dresselhaus and Rashba
effects influence the electronic structure of quasi-one-dimensional
semiconductor quantum dots, similar to those that can be formed inside
semiconductor nanorods. We calculate electronic energy levels, eigen-functions,
and effective g-factors for coupled, double dots made out of different
materials, especially GaAs and InSb. We show that by choosing the form of the
lateral confinement, the contributions of the Dresselhaus and Rashba terms can
be tuned and suppressed, and we consider several possible cases of interest. We
also study how, by varying the parameters of the double-well confinement in the
longitudinal direction, the effective g-factor can be controlled to a large
extent.
