  We report a monolithic bidirectional dual-gate metal-oxide-semiconductor
field effect transistor (MOSFET) fabricated on epitaxially grown beta-Ga2O3,
demonstrating efficient two-way conduction and blocking. It features two
independently controlled gates and operates in four distinct modes, offering
flexibility in managing current and voltage in the first and third quadrants.
This versatility makes it ideal for various power conversion system
applications. The device operates at a low negative threshold voltage (~-2.4 V
for both gates) with a zero turn-on drain voltage and an on-resistance of
approximately 500 ohm-mm. It exhibits a high on/off current ratio of 1e7 in all
three conducting modes. In the blocking mode, the device breakdown was measured
to be more than +-350 V with a current compliance of 0.5 mA/mm. The estimated
breakdown field and power figure of merit for the device are 0.35 MV/cm and 1.6
MW/cm2 respectively.
