  Oxide semimetals exhibiting both nontrivial topological characteristics stand
as exemplary parent compounds and multiple degrees of freedom, offering great
promise for the realization of novel electronic states. In this study, we
present compelling evidence of profound structural and transport phase shifts
in a recently uncovered oxide semimetal, SrNbO3, achieved through effective
in-situ anion doping. Notably, a remarkable increase in resistivity of more
than three orders of magnitude at room temperature is observed upon
nitrogen-doping. The extent of electronic modulation in SrNbO3 is strongly
correlated with the misfit strain, underscoring its phase instability to both
chemical doping and crystallographic symmetry variations. Using
first-principles calculations, we discern that elevating the level of nitrogen
doping induces an upward shift in the conductive bands of SrNbO3-dNd.
Consequently, a transition from a metallic state to an insulating state becomes
apparent as the nitrogen concentration reaches a threshold of 1/3. This
investigation sheds light on the potential of anion engineering in oxide
semimetals, offering pathways for manipulating their physical properties. These
insights hold promise for future applications that harness these materials for
tailored functionalities.
