  The conductivity and Hall effect were measured in CVD-grown monolayer
graphene as a function of the gate voltage, $V_{g}$, at temperatures down to
$T$ = 2 K and in magnetic fields up to $B$ = 8 T. The minimal conductivity was
observed at positive $V_{g}$ which shows the position of the charge neutrality
point, $V_{NP}$. With decreasing $T$, $V_{NP}$ first decreases, but stop to
decrease at low $T$. Hysteresis of conductivity shows similar behavior: it
decreases with decreasing $T$ and disappears at low $T$. A significant
asymmetry was observed at low density of charge carriers $|n|=(n,p)$: mobility
of holes was less than mobility of electrons. The asymmetry decreases with
increasing $|n|$. It was observed that the value of $|n|$ determined from the
Hall effect is less than the full value induced by $V_{g}$. In strong
perpendicular $B$, Shubnikov-de Haas (SdH) oscillations were observed in the
longitudinal conductivity, $\sigma_{xx}$, together with half-integer quantum
Hall plateaus. It was found that $|n|$ determined from SdH oscillations is
equal to the full value induced by $V_{g}$ as opposed to the Hall effect.
Explanatory models for all observed phenomena are discussed.
