  Room temperature local magnetoresistance in two-terminal scheme is reported.
By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is
increased, resulting in large non-local magnetoresistance. The magnitude of the
non-local magnetoresistance is estimated to be 0.0057 ohm at room temperature.
As a result, a clear rectangle signal is observed in local magnetoresistance
measurement even at room temperature. We also investigate the origin of local
magnetoresistance by measuring the spin accumulation voltage of each contact
separately.
