  We present a self-consistent kinetic theory for the electronic response of a
plasma-facing dielectric solid. Based on the Poisson equation and two sets of
spatially separated Boltzmann equations, one for electrons and ions in the
plasma and one for conduction band electrons and valence band holes in the
dielectric, the approach gives the quasi-stationary density and potential
profiles of the electric double layer forming at the interface due to the
permanent influx of electrons and ions from the plasma. The two sets of
Boltzmann equations are connected by quantum-mechanical matching conditions for
the electron distribution functions and a semi-empirical model for hole
injection mimicking the neutralization of ions at the surface. Essential for
the kinetic modeling is the ambipolarity inside the wall, leading to an
electron-hole recombination condition, and the merging of the double layer with
the quasi-neutral, field-free regions deep inside the wall and the plasma. To
indicate the feasibility as well as the potential of the approach we apply it
to a collisionless, perfectly absorbing interface using intrinsic and extrinsic
silicon dioxide and silicon surfaces in contact with a two-temperature hydrogen
plasma as an example.
