  We report on low-temperature transport study of a single layer graphene
(SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in
the device is grown by chemical vapor deposition and the device is fabricated
in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal
resistances across the SLG-tBLG junction (cross-junction resistances) on the
two sides of the Hall bar and the Hall resistances of SLG and tBLG in the
device are measured. In the quantum Hall regime, the measurements show that the
measured cross-junction resistances exhibit a series of new quantized plateaus
and the appearance of these resistance plateaus can be attributed to the
presence of the well-defined edge-channel transport along the SLG-tBLG junction
interface. The measurements also show that the difference between the
cross-junction resistances measured on the two sides of the Hall-bar provides a
sensitive measure to the edge channel transport characteristics in the two
graphene layers that constitute the SLG-tBLG junction and to degeneracy lifting
of the Landau levels in the tBLG layer. Temperature dependent measurements of
the cross-junction resistance in the quantum Hall regime are also carried out
and the influence of the transverse transport of the bulk Landau levels on the
edge channel transport along the SLG-tBLG junction interface are extracted.
These results enrich the understanding of the charge transport across
interfaces in graphene hybrid structures and open up new opportunities for
probing exotic quantum phenomena in graphene devices.
