  We demonstrate the dynamics of stimulated Raman scattering in designed
high-Q/Vm silicon photonic band gap nanocavities through the coupled-mode
theory framework towards optically-pumped silicon lasing. The interplay of
other chi(3) effects such as two-photon absorption and optical Kerr, related
free-carrier dynamics, thermal effects, as well as linear losses such as cavity
radiation and linear material absorption are included and investigated
numerically. Our results clarify the relative contributions and evolution of
the mechanisms, and demonstrate the lasing and shutdown thresholds. Our studies
illustrate the conditions for continuous-wave and pulsed highly-efficient Raman
frequency conversion to be practically realized in monolithic silicon high-Q/Vm
photonic band gap defect cavities.
