  Both quantum spin Hall and quantum anomalous Hall states are novel states of
quantum matter with promising applications. We propose junction quantum wells
comprising II-VI, III-V or IV semiconductors as a large class of new materials
realizing the quantum spin Hall state. Especially, we find that the bulk band
gap for the quantum spin Hall state can be as large as 0.1 eV. Further more,
magnetic doping would induce the ferromagnetism in these junction quantum wells
due to band edge singularities in the band-inversion regime and to realize the
quantum anomalous Hall state.
