  New approaches such as selective area growth, where crystal growth is
lithographically controlled, allow the integration of bottom-up grown
semiconductor nanomaterials in large-scale classical and quantum
nanoelectronics. This calls for assessment and optimization of the
reproducibility between individual components. We quantify the structural and
electronic statistical reproducibility within large arrays of nominally
identical selective area growth InAs nanowires. The distribution of structural
parameters is acquired through comprehensive atomic force microscopy studies
and transmission electron microscopy. These are compared to the statistical
distributions of the cryogenic electrical properties of 256 individual SAG
nanowire field effect transistors addressed using cryogenic multiplexer
circuits. Correlating measurements between successive thermal cycles allows
distinguishing between the contributions of surface impurity scattering and
fixed structural properties to device reproducibility. The results confirm the
potential of SAG nanomaterials, and the methodologies for quantifying
statistical metrics are essential for further optimization of reproducibility.
