  The transport properties, resistance, Hall effect, and low T
magnetoresistance for very oxygen overdoped nonsuperconducting Bi2Sr2CuO6+d
(Bi2201) thin films are reported. From 20 to 300K, the temperature dependence
of the resistance is well described by a law of the form a+bT4/3, theoretically
predicted to occur in the presence of ferromagnetic fluctuations. In addition,
this prediction is reinforced by the analysis of the transverse and the
longitudinal low T magnetoresistance. Interestingly, the presence of a weak
disorder causing low T electronic localization allows us to evidence very short
diffusion lengths, as observed in other systems with ferromagnetic
fluctuations.
