  Anderson's orthogonality catastrophe (AOC) theorem establishes that the
ground state of the many-body fermion system is asymptotically orthogonal to
the ground state of the same system perturbed by a scattering potential, so
that the overlap between the original and new ground states decays to zero with
the system size. We adopt the AOC for a description of heat production in a
complementary metal-oxide-semiconductor (CMOS) transistor. We find that the
heat released in the transistor comprises two distinct components, contribution
from the dissipation accompanying electron transmission under the applied
voltage and purely quantum-mechanical AOC part due to the change in scattering
matrix for electrons upon switching between high and low conductance regimes.
We calculate the AOC-induced heat production, which we call switching heat.
