  Spin relaxation time of conduction electrons through the Elliot-Yafet,
D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for
bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance
of each spin relaxation mechanism is compared and the diagrams showing the
dominant mechanism are constructed as a function of temperature and impurity
concentrations. Our approach is based upon theoretical calculation of the
momentum relaxation rate and allows understanding of the interplay between
various factors affecting the spin relaxation over a broad range of temperature
and impurity concentration.
