  We demonstrate the manipulation of the Curie temperature of buried layers of
the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the
effect of annealing. Patterning the GaAs-capped ferromagnetic layers into
nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As
layers and thus allows the removal of Mn interstitials using annealing. This
leads to an enhanced Curie temperature and reduced resistivity compared to
unpatterned samples. For a fixed annealing time, the enhancement of the Curie
temperature is larger for narrower nanowires.
