  The transfer-free synthesis of high-quality, large-area graphene on a given
dielectric substrate, which is highly desirable for device applications,
remains a significant challenge. In this paper, we report on a simple rapid
thermal treatment method for the fast and direct growth of high-quality,
large-scale monolayer graphene on a SiO2/Si substrate from solid carbon
sources. The stack structure of solid carbon layer/copper film/SiO2 is adopted
in the RTT process. The inserted copper film does not only act as an active
catalyst for the carbon precursor but also serves as a "filter" that prevents
premature carbon dissolution, and thus, contributes to monolayer graphene
growth on SiO2/Si. The produced monolayer graphene exhibits high carrier
mobility of up to 3000 cm2 V-1s-1 at room temperature and standard half-integer
quantum oscillations.
