  This work presents the surface reconstructions and transport properties of
the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable
surface reconstructions, (1x3) and c(2x2), were observed on PtLuSb (001)
surfaces. Antimony-dimerization was determined to be the nature of the (1x3)
surface reconstruction as evidenced by chemical binding energy shifts in the
antimony 4d core-level for surface bonding components. The two surface
reconstructions were studied as a function of Sb4 overpressure and substrate
temperature to create a reconstruction phase diagram. From this reconstruction
phase diagram, a growth window from 320 {\deg}C to 380 {\deg}C using an
antimony overpressure was identified. Within this window, the highest quality
films were grown at a growth temperature of 380 {\deg}C. These films exhibited
lower p-type carrier concentrations as well as relatively high hole mobilities.
