  Diffusion mediated interaction in metal-substrate assembly during high
temperature annealing leads to possible formation of new composite materials.
Here, sputtered grown Ti films on Si3N4/Si substrate has been reported to
produce titanium nitride and silicide based binary composites while undergoing
high vacuum annealing process at temperatures 650{\deg}C and above. Diffusion
of thermally decomposed Si and N atoms from Si3N4 and their subsequent chemical
reaction with Ti have been probed by X-ray photo electron spectroscopy. For
annealing at 800{\deg}C and above, most of the Si atoms show preferences to
stay in elemental form rather than developing silicide phase with Ti. Whereas
at lower annealing temperature, silicide becomes the dominant phase for
decomposed Si atoms. However, N atoms react promptly with Ti and form TiN which
appears as the majority phase for each of the studied annealing temperature.
Further, the nitride and silicide phases across the films have been compared
quantitatively for various annealing temperature and the maximum silicide
formation is observed for the sample annealed at 780{\deg}C. Finally, the
thermally anchored metal-substrate interaction mechanism can be exploited to
fabricate disordered superconducting TiN films where TiSi2 and Si can be used
to tune the level of disorder by altering the annealing temperature.
