  The report contains various aspects of radiation damage in silicon detectors
subjected to high intensity hadron and electromagnetic irradiation. It focuses
on improvements for the foreseen LHC applications, employing oxygenation of
silicon wafers during detector processing (result from CERN-RD48). An updated
survey on hadron induced damage is given in the first article. Several
improvements are outlined especially with respect to antiannealing problems
associated with detector storage during LHC maintenance periods. Open questions
are outlined in the final section, among which are a full understanding of
differences found between proton and neutron induced damage, process related
effects changing the radiation tolerance in addition to the oxygen content and
the lack of understanding the changed detector properties on the basis of
damage induced point and cluster defects. In addition to float zone silicon, so
far entirely used for detector fabrication,Czochralski silicon was also studied
and first promising results are shown. The other three papers deal with gamma
induced damage including also defects introduced either by processing steps or
being inherent to the as grown silicon. However the focus is on measurements
after gamma irradiation in a wide dose range. Both the changes in detector
properties and defect characterisations have been studied. For the first time
it is shown that in contrast to a standard process oxygenated silicon detectors
withstand an irradiation dose of up to 1 Grad with only minor deterioration.
Also it is shown for the first time that in this case the detector properties
can directly be explained by the damage induced point defects. This 1:1
correlation is extremely promising for all future defect engineering work.
