  The lower conduction power losses and the positive temperature coefficient
that favours parallel connections, make Silicon Carbide (SiC) metal oxide
semiconductor field-effect transistors (MOSFETs) to be an excellent replacement
of existing Silicon insulated gate bipolar transistors (IGBTs) technology.
These characteristics combined with high switching frequency operation, enables
the design of high-accuracy DC-DC converters with minimised filtering
requirements. This paper investigates the design for a converter with
high-accuracy current (0.9ppm) supplying a 0.05H electromagnetic load, aiming
to achieve the accuracy without the use of active filters, by using SiC MOSFETs
and a scalable module-based converter design.
