  The interaction between the telegraph noise and background voltage
fluctuations in the current induced dissipative state of high-Tc BiSrCaCuO thin
films has been investigated. Experimental time records of the voltage drop
across current biased thin film strips show markedly different background noise
traces in the up and down telegraph states. Detailed analysis demonstrates that
fluctuations around the telegraph voltage levels are due to a unique background
noise process. The apparent quiet and noisy voltage states are due only to
differences in the effective frequency bandwidth at which background noise is
seen at distinct telegraph levels. Changes of the background noise variance
ratio with changing bias current follow changes of the statistical average
lifetimes of the random telegraph process.
