  In the supporting information file for article Dynamics of Defects in van der
Waals Epitaxy of Bismuth Telluride Topological Insulators(J. Phys. Chem. C
2019, 123, 24818-24825, doi: 10.1021/acs.jpcc.9b05377), several topics on X-ray
diffraction analysis of thin films were developed or revisited. A simple
equation to determine lateral lattice coherence lengths in thin films stands as
the main development (section S4 - Lateral lattice coherence length in thin
films), while X-ray dynamical diffraction simulation in monochromator crystals
stands as an interesting overview on how the ratio between $\pi$ and $\sigma$
polarization components is affected by whether diffraction takes place under
kinematical or dynamical regime (section S3 - Polarization factor).
