  The in-plane electron mobility has been calculated in InAs/GaSb type-II
superlattices at low temperatures. The interface roughness scattering and
ionized impurity scattering are investigated as the dominant scattering
mechanisms in limiting the electron transport at low temperatures. For this
purpose, the band structures and wave functions of electrons in such
superlattices are calculated by solving the K.P Hamiltonian using the numerical
Finite Difference method. The scattering rates have obtained for different
temperatures and structural parameters. We show that the scattering rates are
high in thin-layer superlattices and the mobility rises as the temperature
increases in low-temperature regime.
