  Two dimensional semiconductors hosting strain-induced quantum emitters offer
unique abilities to achieve scalable architectures for deterministic coupling
to nanocavities and waveguides that are required to enable chip-based quantum
information processing technologies. A severe drawback remains that exciton
emission from quantum emitters in $WSe_2$ quenches beyond 30 K, which requires
cryogenic cooling. Here we demonstrate an approach to increase the temperature
survival of exciton quantum emitters in $WSe_2$ that is based on maximizing the
emitter quantum yield. Utilizing optimized material growth that leads to
reduced density of nonradiative defects as well as coupling of the exciton
emission to plasmonic nanocavities modes, we achieve average quantum yields up
to 44%, thermal activation energies up to 92 meV, and single photon emission
signatures up to temperatures of 160 K. At these values non-cryogenic cooling
with thermo-electric chips becomes already feasible, while quantitative
analysis shows that room temperature operation is within reach through active
strain engineering.
