  We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE)
over a wide range of magnetic (B) field in a heterojunction insulated gate
field-effect transistor (HIGFET). The electron density can be tuned from n=0 to
7.6 \times 10^{11} cm^{-2} with a peak mobility \mu = 5.5 \times 10^6 cm^2/Vs.
The \nu=5/2 state shows a strong minimum in diagonal resistance and a
developing Hall plateau at magnetic fields as high as 12.6T. The strength of
the energy gap varies smoothly with B-field. We interpret these observations as
strong evidence for a spin-polarized ground state at \nu=5/2.
