  Silicon photonic integration has gained great success in many application
fields owing to the excellent optical device properties and complementary
metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic
integration of III-V lasers and silicon photonic components on single silicon
wafer is recognized as a long-standing obstacle for ultra-dense photonic
integration, which can provide considerable economical, energy efficient and
foundry-scalable on-chip light sources, that has not been reported yet. Here,
we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on
trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration
with butt-coupled silicon waveguides. By utilizing the patterned grating
structures inside pre-defined SOI trenches and unique epitaxial method via
molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with
out-coupled silicon waveguide are achieved on such template. By resolving the
epitaxy and fabrication challenges in such monolithic integrated architecture,
embedded III-V lasers on SOI with continuous-wave lasing up to 85 oC are
obtained. The maximum output power of 6.8 mW can be measured from the end tip
of the butt-coupled silicon waveguides, with estimated coupling efficiency of
approximately -7.35 dB. The results presented here provide a scalable and
low-cost epitaxial method for realization of on-chip light sources directly
coupling to the silicon photonic components for future high-density photonic
integration.
