  An approach to calculation of the ionized impurity and surface roughness
scattering rates of electrons in very thin semiconductor quantum wires taking
into account the energy level broadening is worked out. It is assumed that all
the electrons in the structure are in the electric quantum limit. The screening
is taken into account while considering the ionized impurity scattering.
Comparison of the surface roughness scat-tering rates calculated using the
exponential and Gaussian autocorrelation functions is done.
