  We study the thermoelectric properties of bulk $MoSe_2$ within relaxation
time approximation including electron-phonon and ionized impurity interactions
using first-principles calculations at room temperatures. The anisotropy of
this two-dimensional layered metal dichalcogenide is studied by calculations of
electron mobility in the cross-plane and the in-plane directions. We show that
the cross-plane mobility is two orders of magnitude smaller than the in-plane
one. The inclusion of van der Waals interactions further lowers the carrier
mobility in the cross-plane direction but minimally affects the in-plane one.
The results for in-plane electrical mobility and conductivity are in close
agreement with experimentally reported values indicating the accuracy of the
calculations. The Seebeck coefficient calculations show that this coefficient
is primarily dictated by the band structure. The details of relaxation times
and inclusion of van der Waals interactions only slightly change the Seebeck
coefficient. The in-plane thermoelectric power factor reaches a maximum value
of 20 $\mu Wcm^{-1}K^{-2}$ at a carrier concentration of $1.5x10^{20}$
$cm^{-3}$ at 300K.
