  We report on transport properties of the controllable large area MoSO/Reduced
graphene oxide(RGO) heterostructures electrodeposited on FTO substrates and its
comparision with theoretical calculations on MoSo/Gr. I-V characteristics of
the heterostructure made by P or n-type MoSO, exhibit Schottkey behavior in the
interface similar to the MoS$_{2}$/Gr ones. Theoretical calculations show
significant effects of lateral layer size as well as layer number in the
electronic properties. In monolayer MoS$_{2}$/Gr by increasing the lateral size
the energy gap disappears and the Fermi level shifts towards valence band. In
the case of bilayer MoS$_{2}$ on bilayer Gr structure, the Fermi level shift is
again towards valence band but, the gap is slightly higher than the monolayer
structure. We found that the experimentally obtained results for n-type
MoSO/RGO results are qualitatively in agreement with theoretical calculations
of the MoS$_{2}$/Gr heterostructure. These results are beneficial to understand
and design the high quality and low cost MoSO/RGO based electronic,
optoelectronic and energy storage devices or cocatalysts.
