  A wakeup scheme for ferroelectric thin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is
presented, based on a gradual switching approach using multiple short pulses
with a voltage amplitude roughly equal to the coercive voltage. This enables
the on-chip wakeup and switching operation of ferroelectric devices such as
tunnel junctions (FTJs) with identical pulses. After wakeup using alternating
pulse trains which gradually switch the film polarization, FTJ operation is
demonstrated to be as effective as after `normal' wakeup, with bipolar pulses
of an amplitude larger than the coercive voltage. In this case the voltage
applied during wakeup was reduced by 26\%, thereby lowering the required
operating power.
