  We analysed perovskite CH3NH3PbI3-xClx inverted planner structure solar cell
with nickel oxide (NiO) and spiro-MeOTAD as hole conductors. This structure is
free from electron transport layer. The thickness is optimized for NiO and
spiro-MeOTAD hole conducting materials and the devices do not exhibit any
significant variation for both hole transport materials. The back metal contact
work function is varied for NiO hole conductor and observed that Ni and Co
metals may be suitable back contacts for efficient carrier dynamics. The solar
photovoltaic performance showed a linear decrease in efficiency with increasing
temperature. The electron affinity and band gap of transparent conducting oxide
and NiO layers are varied to understand their impact on conduction and valence
band offsets. A range of suitable band gap and electron affinity values are
found essential for efficient device performance.
