  The c-axis charge dynamics of copper oxide materials in the underdoped and
optimally doped regimes has been studied by considering the incoherent
interlayer hopping. It is shown that the c-axis charge dynamics for the chain
copper oxide materials is mainly governed by the scattering from the in-plane
fluctuation, and the c-axis charge dynamics for the no-chain copper oxide
materials is dominated by the scattering from the in-plane fluctuation
incorporating with the interlayer disorder, which would be suppressed when the
holon pseudogap opens at low temperatures and lower doping levels, leading to
the crossovers to the semiconducting-like range in the c-axis resistivity and
the temperature linear to the nonlinear range in the in-plane resistivity.
