  Ferroelectric BaTiO3 films with large polarization have been integrated with
Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are
obtained in a substrate temperature range of about 300 deg C wide. The
deposition temperature critically affects the growth kinetics and
thermodynamics balance, resulting on a high impact in the strain of the BaTiO3
polar axis, which can exceed 2% in films thicker than 100 nm. The ferroelectric
polarization scales with the strain and therefore deposition temperature can be
used as an efficient tool to tailor ferroelectric polarization. The developed
strategy overcomes the main limitations of the conventional strain engineering
methodologies based on substrate selection: it can be applied to films on
specific substrates including Si(001) and perovskites, and it is not restricted
to ultrathin films.
