  With the increase of the speed of computers, timing and power requirements
are becoming crucial for memory devices. The main objective of the paper is to
modify 180nm CMOS sense amplifier design by using memristive devices and
improve the design in terms of on-chip area, power efficiency, resistance to
temperatures and speed. To achieve this, NOT gates in the circuit were
constructed using memristor and CMOS. The main aim of the paper is to check the
effect of memristors on characteristics of sense amplifier. The design was
tested on Conventional Current Sense Amplifier (CSA) circuit. Changes in power,
area, sensing delay and offset are reported in the paper.
