  In this work the effects of coherent radiation (Laser) and incoherent
radiation (Halogen lamp) during the electrochemical etching process on the
structural characteristics of n-type PSi samples were investigated. The
porosity values were measured by depending on the microstructure analyses and
Gravimetric measurements. Surface morphology, layer thickness, pore diameter,
pore shape, wall thickness and etching rate were studied by depending on
Scanning electron-microscopic (SEM) images
