  Electrically driven emission from negatively charged silicon-vacancy, (SiV)-
centres in single crystal diamond is demonstrated. The SiV centres were
generated using ion implantation into an intrinsic (i) region of a p-i-n single
crystal diamond diode. Both electroluminescence and the photoluminescence
signals exhibit the typical emission that is attributed to the (SiV)- centres.
Under forward and reversed biased PL measurements, no signal from the neutral
(SiV)0 defect could be observed. The realization of electrically driven (SiV)-
emission is promising for scalable nanophotonics devices employing colour
centres in single crystal diamond.
