  We demonstrate rapid deterministic (seeded) growth of large single-crystals
of graphene by chemical vapour deposition (CVD) utilising pre-patterned copper
substrates with chromium nucleation sites. Arrays of graphene single-crystals
as large as several hundred microns are grown with a periodicity of up to 1 mm.
The graphene is transferred to target substrates using aligned and
contamination-free semi-dry transfer. The high quality of the synthesised
graphene is confirmed by Raman spectroscopy and transport measurements,
demonstrating room-temperature carrier mobility of 21 000 cm2 / V s when
transferred on top of hexagonal boron nitride. By tailoring the nucleation of
large single-crystals according to the desired device geometry, it will be
possible to produce complex device architectures based on single-crystal
graphene, thus paving the way to the adoption of CVD graphene in wafer-scale
fabrication.
