  With a tight binding treatment we examine amorphous conductors with gas-like
disorder, or no correlations among the site positions. We consider an
exponentially decaying hopping integral with range $l$, and the Inverse
Participation Ratio (IPR) is used to characterize carrier wave functions with
respect to localization. With the aid of two complementary finite size scaling
techniques to extrapolate to the bulk limit (both methods exploit critical
behavior in different ways to find the boundary between domains of extended and
localized wave functions) which nevertheless yield identical results, we obtain
phase diagrams showing regions where states are extended and domains of
localized states. In the 2D case, states are localized below a threshold length
scale $l_{c}$ on the order of the interparticle separation $\rho^{-1/2}$ with a
finite fraction of states extended for $l > l_{c}$. For $D = 3$, the extended
phase is flanked by regions of localized states and bounded by two mobility
edges. The swath of extended states, broad for $l \sim 1$, becomes narrower
with decreasing $l$, though persisting with finite width even for $l <
(1/5)\rho^{-1/3}$. Mobility edges are interpreted as lines of critical points,
and we calculate the corresponding critical exponents.
