  We report on the modeling of polarization-induced two-dimensional electron
gas (2DEG) formation at ${\epsilon}$-AlGaO3 / ${\epsilon}$-Ga2O3
heterointerface and the effect of spontaneous polarization (Psp) reversal on
2DEG density in ${\epsilon}$-Ga2O3 /${\epsilon}$-AlGaO3 / ${\epsilon}$-Ga2O3
double heterostructures. Density-functional theory (DFT) is utilized to
calculate the material properties of ${\epsilon}$-Ga2O3 and ${\epsilon}$-AlGaO3
alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters,
the 2DEG density is calculated as a function of barrier type and thickness. By
optimizing the layer thicknesses of
${\epsilon}$-Ga2O3/${\epsilon}$-AlGaO3/${\epsilon}$-Ga2O3 heterostructures,
charge contrast ratios exceeding 1600 are obtained. This computational study
indicates the high potential for ${\epsilon}$-Ga2O3-based heterostructure
devices for non-volatile memories and neuromorphic applications.
