  We present net gain measurements at room temperature in
Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm,
using the variable stripe length method. Measurements were conducted at two
different positions on the sample, where the net gain threshold was attained at
218 kW/cm$^{2}$ and 403 kW/cm$^{2}$. At the position with higher threshold, we
observed an anomalous amplification of the photoluminescence intensity that
occurs for long stripe lengths (superior to 400 $\mu$m) and high pumping power
(superior to 550 kW/cm$^{2}$), leading to an overestimation of the gain value.
We attribute such a phenomenon to the feedback provided by the reflection from
cracks, which were created during the epitaxial growth due to the strong
lattice mismatch between different layers. The highest gain value without
anomalous amplification was 131 cm$^{-1}$, obtained at the maximum pumping
power density of the experimental setup (743 kW/cm$^{2}$). Using the intrinsic
efficiency limit of the cathodoluminescence process, we estimate a lower limit
for electron beam pumped laser threshold at room temperature of 390 kW/cm$^{2}$
for this multi-quantum well structure.
