  Moir\'e superlattices in twistronic heterostructures are a powerful tool for
materials engineering. In marginally twisted (small misalignment angle,
$\theta$) bilayers of nearly lattice-matched two-dimensional (2D) crystals
moir\'e patterns take the form of domains of commensurate stacking, separated
by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes.
Here, we show that, for type-II transition metal dichalcogenide bilayers
MoX$_2$/WX$_2$ (X=S, Se), the hydrostatic strain component in these hot spots
creates quantum dots for electrons and holes. We investigate the electron/hole
states bound by such objects, discussing their manifestations via the
intralayer intraband infrared transitions. The electron/hole confinement, which
is strongest for $\theta<0.5^{\circ}$, leads to a red-shift of their
recombination line producing single photon emitters (SPE) broadly tuneable
around 1\,eV by misalignment angle. These self-organised dots can form in
bilayers with both aligned and inverted MoX$_2$ and WX$_2$ unit cells, emitting
photons with different polarizations. We also find that the hot spots of strain
reduce the intralayer MoX$_2$ A-exciton energy, enabling selective population
of the quantum dot states.
