  Graphene, defined as a single atomic plane of graphite, is a semimetal with
small overlap between the valence and the conduction bands. The stacking of
graphene up to several atomic layers can produce diverse physical properties,
depending on the stacking way. The bilayer graphene is also a semimetal,
adopting the AB-stacked (or Bernal-stacked) structure or the rare AA-stacked
structure. The trilayer or a few layer graphene (FLG) can be semimetal or
semiconductor, depending on whether it takes Bernal (ABA) stacking or
rhombohedral (ABC) stacking. We will give a perspective on the recent two mild
approaches to control the stacking via local transition from ABC stacking into
ABA stacking. It is believed that with the rapid development of graphene-based
materials, these techniques for stacking control can be used for more complex
structure to fulfill fascinating properties and devices.
