  We have observed shot noise in the hopping conduction of two dimensional
carriers confined in a p-type SiGe quantum well at a temperature of 4K.
Moreover, shot noise is suppressed relative to its ``classical'' value 2eI by
an amount that depends on the length of the sample and carrier density, which
was controlled by a gate voltage. We have found a suppression factor to the
classical value of about one half for a 2 $\mu$m long sample, and of one fifth
for a 5 $\mu$m sample. In each case, the factor decreased slightly as the
density increased toward the insulator-metal transition. We explain these
results in terms of the characteristic length ($\simeq 1\mu$m in our case) of
the inherent inhomogeneity of hopping transport.
