  We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B <
32 T) dependences of longitudinal and Hall resistivities for the
p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w
< 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high
sensitivity of the experimental data [the structure of magnetoresistance
traces, relative values of the inter-Landau-level (LL) gaps deduced from the
activated magnetotransport etc] to the quantum well (QW) characteristics has
been revealed in the cases when the Fermi level reaches the second confinement
subband. The background density of states (5-10)x10^{14} m^{-2}meV^{-1} deduced
from the activation behavior of the magnetoresistance is too high to be
attributed to the LL tails, but may be accounted for within a smooth random
potential model. The hole gas in the Ge QW has been found to separate into two
sublayers for d_w > ~35 nm and p_s = ~5x10^{15} m^{-2}. A dramatic indication
to this separation is the disappearance of the quantum Hall (QH) plateau for
the filling factor nu = 1 as calculated for the whole Ge layer. Concomitantly a
positive magnetoresistance emerges in the weakest fields, from which about a
factor of two different mobilities in the sublayers have been deduced. A model
is suggested to explain the existence of the QH plateaux close to the
fundamental values in a system of two parallel layers with different
mobilities. A comparison of the simulated structure of the QH
magnetoresistivity with the experimental one indicates that the hole densities
in the sublayers are not much different. Thus, the different mobilities are due
to different quality of the normal and inverted interfaces of the Ge QW.
