  In this letter, we propose the resonant tunneling diode (RTD) based on a
double-barrier graphene/boron nitride (BN) heterostructure as device suitable
to take advantage of the elaboration of atomic sheets containing different
domains of BN and C phases within a hexagonal lattice. The device operation and
performance are investigated by means of a self- consistent model within the
non-equilibrium Green's function formalism on a tight-binding Hamiltonian. This
RTD exhibits a negative differential conductance effect which involves the
resonant tunneling through both the electron and hole bound states of the
graphene quantum well. It is shown that the peak- to-valley ratio can reach the
value of 4 at room temperature for gapless graphene and the value of 13 for a
bandgap of 50 meV.
