  Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron
sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ
X-ray diffraction and atomic force microscopy were used to determine the layer
structures, and magnetic force microscopy, superconducting quantum interference
device and ferromagnetic resonance were used to determine their magnetic
properties. RD-mediated layers exhibit similar magnetic properties as MBE-grown
monocrystalline Mn 5 Ge 3 thin films, while NDR-mediated layers show magnetic
properties similar to monocrystalline C-doped Mn 5 Ge 3 C x thin films with
$0.1 \leq x \leq 0.2.$ NDR appears as a CMOS-compatible efficient method to
produce good magnetic quality high-curie temperature Mn 5 Ge 3 thin films.
