  Magnetoresistance in long correlated nanowires of degenerate semiconductor
InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1 - 1 mm) is
studied over temperature range 2.3 - 300 K. At zero magnetic field the electric
conduction $G$ and the current-voltage characteristics of such wires obey the
power laws $G\propto T^\alpha$, $I\propto V^\beta$, expected for
one-dimensional electron systems. The effect of magnetic field corresponds to a
20% growth of the exponents $\alpha$, $\beta$ at H=10 T. The observed
magnetoresistance is caused by the magnetic-field-induced breaking of the
spin-charge separation and represents a novel mechanism of magnetoresistance.
