  In this work we use LEEM, XPEEM and XPS to study how the excess Si at the
graphene-vacuum interface reorders itself at high temperatures. We show that
silicon deposited at room temperature onto multilayer graphene films grown on
the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to
temperatures above 1020. In a sequence of depositions, we have been able to
intercalate ~ 6 ML of Si into the graphene-SiC interface.
