  Graphene is believed to be an excellent candidate material for
next-generation electronic devices. However, one needs to take into account the
nontrivial effect of metal contacts in order to precisely control the charge
injection and extraction processes. We have performed transport calculations
for graphene junctions with wetting metal leads (metal leads that bind
covalently to graphene) using nonequilibrium Green's functions and density
functional theory. Quantitative information is provided on the increased
resistance with respect to ideal contacts and on the statistics of current
fluctuations. We find that charge transport through the studied two-terminal
graphene junction with Ti contacts is pseudo-diffusive up to surprisingly high
energies.
