  We present differential conductance measurements of Cobalt / Cobalt-Oxide /
Indium planar junctions, 500nm x 500nm in size. The junctions span a wide range
of barriers, from very low to a tunnel barrier. The characteristic conductance
of all the junctions show a V-shape structure at low bias instead of the
U-shape characteristic of a s-wave order parameter. The bias of the conductance
peaks is, for all junctions, larger than the gap of indium. Both properties
exclude pure s-wave pairing. The data is well fitted by a model that assumes
the coexistence of s-wave singlet and equal spin p-wave triplet fluids. We find
that the values of the s-wave and p-wave gaps follow the BCS temperature
dependance and that the amplitude of the s-wave fluid increases with the
barrier strength.
