  In the current paper, electrical transport properties of 25 nm thick Nb films
sputtered on the photosensitive semiconductor BiOCl were investigated in the
temperature range 7.5 K $\leq T \leq$ 8.5 K. The influence of green (532 nm)
and red (640 nm) laser excitations on resistive superconducting transitions of
the niobium thin films on a silicon glass and BiOCl single crystal substrates
were studied. The temperature dependences of the resistivity for Nb are in good
agreement with the McMillan model which indicates the strong influence of the
inverse proximity effect induced by the interface. The increased influence of
the BiOCl/Nb interface under laser excitation corresponds to the raising the
ratio of the density of normal to superconductivity carriers in the
$T\rightarrow 0$ limit and this observation is in agreement with the
photoconductivity study of BiOCl single crystals.
