  In this paper, a detailed parameter extraction methodology is proposed for
low-frequency noise (LFN) in single layer (SL) graphene transistors (GFETs)
based on a recently established compact LFN model. Drain current and LFN of two
short channel back-gated GFETs (L=300, 100 nm) were measured at lower and
higher drain voltages, for a wide range of gate voltages covering the region
away from charge neutrality point (CNP) up to CNP at p-type operation region.
Current-voltage (IV) and LFN data were also available from a long channel SL
top solution-gated (SG) GFET (L=5 um), for both p- and n-type regions near and
away CNP. At each of these regimes, the appropriate IV and LFN parameters can
be accurately extracted. Regarding LFN, mobility fluctuation effect is dominant
at CNP and from there the Hooge parameter aH can be extracted while the carrier
number fluctuation contribution which is responsible for the well-known M-shape
bias dependence of output noise divided by squared drain current, also observed
in our data, makes possible the extraction of the NT parameter related to the
number of traps. In the less possible case of a Lambda-shape trend, NT and aH
can be extracted simultaneously from the region near CNP. Away from CNP,
contact resistance can have a significant contribution to LFN and from there
the relevant parameter SDR^2 is defined. The LFN parameters described above can
be estimated from the low drain voltage region of operation where the effect of
Velocity Saturation (VS) mechanism is negligible. VS effect results in the
reduction of LFN at higher drain voltages and from there the IV parameter
hOmega which represents the phonon energy and is related to VS effect can be
derived both from drain current and LFN data.
