  A multilayer perovskite thin film resistive memory device has been developed
comprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a
YBCO bottom thin film electrode; a thin yttria stabilized zirconia (YSZ) buffer
layer grown on the PCMO layer, and a gold thin film top electrode. The
multi-layer thin film lattice structure has been characterized by XRD and TEM
analyses showing a high quality heterostructure. I-AFM analysis indicated nano
granular conductivity distributed uniformly throughout the PCMO film surface.
With the addition of the YSZ buffer layer, the pulse voltage needed to switch
the device is significantly reduced and the resistance-switching ratio is
increased compared to a non-buffered resistance memory device, which is very
important for the device fabrication. The magnetic field effect on the
multilayer structure resistance at various temperatures shows CMR behavior for
both high and low resistance states implying a bulk material component to the
switch behavior.
