  We report on a atomistic theory of electronic structure and optical
properties of a single InAs quantum dot grown on InP patterned substrate. The
spatial positioning of individual dots using InP nano-templates results in a
quantum dot embedded in InP pyramid. The strain distribution of a quantum dot
in InP pyramid is calculated using the continuum elasticity theory. The
electron and valence hole single-particle states are calculated using atomistic
effective-bond-orbital model with second nearest-neighbor interactions, coupled
to strain via Bir-Pikus Hamiltonian. The optical properties are determined by
solving many-exciton Hamiltonian for interacting electron and hole complexes
using the configuration-interaction method. The effect of positioning of
quantum dots using nanotemplate on their optical spectra is determined by a
comparison with dots on unpatterned substrates, and with experimental results.
The possibility of tuning the quantum dot properties with varying the
nano-template is explored.
