  Moir\'e patterns are known to confine electronic states in transition metal
dichalcogenide bilayers, thus generalizing the notion of magic angles
discovered in twisted bilayer graphene to semiconductors. Here, we present a
revised Slater-Koster tight-binding model that facilitates the first reliable
and systematic studies of such states in twisted bilayer MoS$_2$ for the whole
range of rotation angles $\theta$. We show that isolated bands appear at low
energy for $\theta \lesssim 5 - 6^\circ$. Moreover, these bands become
"flatbands", characterized by a vanishing average velocity, for the smallest
angles $\theta \lesssim 2^\circ$.
