  In search of an improved strategy to form low resistance contacts to MoS2 and
related semiconducting transition metal dichalcogenides, we use ab initio
density functional electronic structure calculations in order to determine the
equilibrium geometry and electronic structure of MoO3/MoS2 and MoO2/MoS2
bilayers. Our results indicate that, besides a rigid band shift associated with
charge transfer, the presence of molybdenum oxide modifies the electronic
structure of MoS2 very little. We find that the charge transfer in the bilayer
provides a sufficient degree of hole doping to MoS2, resulting in a highly
transparent contact region.
