  This work describes morphological and crystalline properties of the InAs
islands grown on templates created by focused ion beam (FIB) on indium
phosphide (InP) substrates. Regular arrangements of shallow holes are created
on the InP (001) surfaces, acting as preferential nucleation sites for InAs
islands grown by Metal-Organic Vapor Phase Epitaxy. Ion doses ranging from
$10^{15}$ to $10^{16}$ $Ga^{+}$/$cm^{2}$ were used and islands were grown for
two sub-monolayer coverages. We observe the formation of clusters in the inner
surfaces of the FIB produced cavities and show that for low doses templates the
nanostructures are mainly coherent while templates created with large ion doses
lead to the growth of incoherent islands with larger island density. The
modified island growth is described by a simple model based on the surface
potential and the net adatom flow to the cavities. We observe that obtained
morphologies result from a competition between coarsening and coalescence
mechanisms.
