  When graphene is exposed to a strong few-cycle optical field, a directional
electric current can be induced depending on the carrier-envelope phase of the
field. This phenomenon has successfully been explained by the charge dynamics
in reciprocal space, namely an asymmetry in the conduction band population left
after the laser excitation. However, the corresponding real-space perspective
has not been explored so far although it could yield knowledge about the atomic
origin of the macroscopic currents. In this work, by adapting the
nearest-neighbor tight-binding model including overlap integrals and the
semiconductor Bloch equation, we reveal the spatial distributions of the
light-field-driven currents on the atomic scale and show how they are related
to the light-induced changes of charge densities. The atomic-scale currents
flow dominantly through the network of the {\pi} bonds and are the strongest at
the bonds parallel to the field polarization, where an increase of the charge
density is observed. The real-space maps of the currents and changes in charge
densities are elucidated using simple symmetries connecting real and reciprocal
space. We also discuss the strong-field-driven Rabi oscillations appearing in
the atomic-scale charge densities. This work highlights the importance of
real-space measurements and stimulates future time-resolved atomic-scale
experimental studies with high-energy electrons or X-rays, for examples.
