  Straight, axial InAs nanowire with multiple segments of GaInAs were grown.
High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the
distribution of group III atoms at the axial interfaces and at the sidewalls.
Significant Ga enrichment, accompanied by a structural change is observed at
the GaInAs/InAs interfaces and a higher Ga concentration for the early grown
GaInAs segments. The elemental map and EDS line profile infer Ga enrichment at
the facet junctions between the sidewalls. The relative chemical potentials of
ternary alloys and the thermodynamic driving force for liquid to solid
transition explains the growth mechanisms behind the enrichment.
