  We present the results of electrically-detected magnetic resonance (EDMR)
experiments on silicon with ion-implanted phosphorus nanostructures, performed
at 5 K. The devices consist of high-dose implanted metallic leads with a square
gap, into which Phosphorus is implanted at a non-metallic dose corresponding to
10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region,
the EDMR signal from less than 100 donors is detected. This technique provides
a pathway to the study of single donor spins in semiconductors, which is
relevant to a number of proposals for quantum information processing.
