  Integrated circuits based on CMOS (complementary metal-oxide semiconductors)
are at the heart of the technological revolution of the past 40 years, as these
have enabled compact and low cost micro-electronic circuits and imaging
systems. However, the diversification of this platform into applications other
than microcircuits and visible light cameras has been impeded by the difficulty
to combine other semiconductors than silicon with CMOS. Here, we show for the
first time the monolithic integration of a CMOS integrated circuit with
graphene, operating as a high mobility phototransistor. We demonstrate a
high-resolution image sensor and operate it as a digital camera that is
sensitive to UV, visible and infrared light. The demonstrated graphene-CMOS
integration is pivotal for incorporating 2d materials into the next generation
microelectronics, sensor arrays, low-power integrated photonics and CMOS
imaging systems covering visible, infrared and even terahertz frequencies.. The
demonstrated graphene-CMOS integration is pivotal for incorporating 2d
materials into the next generation microelectronics, sensor arrays, low-power
integrated photonics and CMOS imaging systems covering visible, infrared and
even terahertz frequencies.
