  We provide a comprehensive analysis of the prominent tight-binding (TB)
models for transition metal dichalcogenides (TMDs) available in the literature.
We inspect the construction of these TB models, discuss their parameterization
used and conduct a thorough comparison of their effectiveness in capturing
important electronic properties. Based on these insights, we propose a novel TB
model for TMDs designed for enhanced computational efficiency. Utilizing
$MoS_2$ as a representative case, we explain why specific models offer a more
accurate description. Our primary aim is to assist researchers in choosing the
most appropriate TB model for their calculations on TMDs.
