  InAs/GaSb hosts a broken gap band alignment that has been shown to generate
helical topological edge states. Upon the introduction of Mn into the
structure, it has been predicted to host a quantized anomalous Hall effect.
Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of
the Fermi level, the introduction of paramagnetism, but also has a non-trivial
impact on the band alignment of the system. The measurement of
Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall
effect in Mn-doped samples indicate the coexistence of a high mobility
two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb,
pure-n-type transport is observed. We hypothesize that Mn acceptor levels can
pin the Fermi energy near the valence band edge of InAs, far from the
interface, which introduces a strong band bending to preserve the band offset
at the InAs/GaSb interface. The realization of the QAHE in this structure will
thus require a careful control of the band alignment to preserve topological
insulating character.
