  Electronic transport in low dimensions through a disordered medium leads to
localization. The addition of gauge fields to disordered media leads to
fundamental changes in the transport properties. For example, chiral edge
states can emerge in two-dimensional systems with a perpendicular magnetic
field. Here, we implement a "synthetic'' gauge field for photons using
silicon-on-insulator technology. By determining the distribution of transport
properties, we confirm the localized transport in the bulk and the suppression
of localization in edge states, using the "gold standard'' for localization
studies. Our system provides a new platform to investigate transport properties
in the presence of synthetic gauge fields, which is important both from the
fundamental perspective of studying photonic transport and for applications in
classical and quantum information processing.
