  In this paper, we investigate the advanced circuit features such as wordline-
(WL) underdrive (prevents retention failure) and overdrive (assists write)
employed in the peripherals of Dynamic RAM (DRAM) memories from a security
perspective. In an ideal environment, these features ensure fast and reliable
read and write operations. However, an adversary can re-purpose them by
inserting Trojans to deliver malicious payloads such as fault injections,
Denial-of-Service (DoS), and information leakage attacks when activated by the
adversary. Simulation results indicate that wordline voltage can be increased
to cause retention failure and thereby launch a DoS attack in DRAM memory.
Furthermore, two wordlines or bitlines can be shorted to leak information or
inject faults by exploiting the DRAM's refresh operation. We demonstrate an
information leakage system exploit by implementing TrappeD on RocketChip SoC.
