  The paper reports optical orientation experiments performed in the narrow
GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a
control over the spin polarization by means of the optical orientation via the
impurity-to-band excitation and observe a sign inversion of the luminescence
polarization depending on the pump power. The g factor of a hole localized on
the Mn acceptor in the quantum well was also found to be considerably modified
from its bulk value due to the quantum confinement effect. This finding shows
the importance of the local environment on magnetic properties of the dopants
in semiconductor nanostructures.
