  We demonstrate the gate-tunability of the long-range magnetic order in a
p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a
low V-doping concentration limit, the long-range ferromagnetic order is
enhanced by increasing the hole density. In contrast, the short-range
antiferromagnetic order is manifested at a high electron density by full
compensation of the p-type V doping concentration. The hole-mediated long-range
magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in
V-doped WSe2 at room temperature. Our findings on strong coupling between
charge and spin order in V-doped WSe2 provide plenty of room for
multifunctional gate-tunable spintronics.
