  Charge trapping plays an important role for the reliability of electronic
devices and manifests itself in various phenomena like bias temperature
instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted
tunneling (TAT). In this work we present Comphy v3.0, an open source physical
framework for modeling these effects in a unified fashion using nonradiative
multiphonon theory on a one-dimensional device geometry. Here we give an
overview about the underlying theory, discuss newly introduced features
compared to the original Comphy framework and also review recent advances in
reliability physics enabled by these new features. The usefulness of Comphy
v3.0 for the reliability community is highlighted by several practical examples
including automatic extraction of defect distributions, modeling of TAT in
high-k capacitors and BTI/RTN modeling at cryogenic temperatures.
