  Advances in quantum technology may come from the discovery of new materials
systems that improve the performance or allow for new functionality in
electronic devices. Lead telluride (PbTe) is a member of the group IV-VI
materials family that has significant untapped potential for exploration. Due
to its high electron mobility, strong spin-orbit coupling and ultrahigh
dielectric constant it can host few-electron quantum dots and ballistic quantum
wires with opportunities for control of electron spins and other quantum
degrees of freedom. Here, we report the fabrication of PbTe nanowires by
molecular beam epitaxy. We achieve defect-free single crystalline PbTe with
large aspect ratios up to 50 suitable for quantum devices. Furthermore, by
fabricating a single nanowire field effect transistor, we attain bipolar
transport, extract the bandgap and observe Fabry-Perot oscillations of
conductance, a signature of quasiballistic transmission.
