  Clear evidence of ferromagnetic behavior at temperatures >400 K as well as
spin polarization of the charge carriers have been observed in ZnMnO thin films
grown on Al2O3 and MgO substrates. The magnetic properties depended on the
exact Mn concentration and the growth parameters. In well-characterized
single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest
moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall
effect shows that the charge carriers (electrons) are spin polarized and
participate in the observed ferromagnetic behavior.
