  Graphitization of the 6H-SiC(0001) surface as a function of annealing
temperature has been studied by ARPES, high resolution XPS, and LEED. For the
initial stage of graphitization - the 6root3 reconstructed surface - we observe
sigma-bands characteristic of graphitic sp2-bonded carbon. The pi-bands are
modified by the interaction with the substrate. C1s core level spectra indicate
that this layer consists of two inequivalent types of carbon atoms. The next
layer of graphite (graphene) formed on top of the 6root3 surface at
TA=1250-1300 degree C has an unperturbed electronic structure. The annealing at
higher temperatures results in the formation of a multilayer graphite film. It
is shown that the atomic arrangement of the interface between graphite and the
SiC(0001) surface is practically identical to that of the 6root3 reconstructed
layer.
