  In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet
light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are
investigated numerically. From our simulation, 1-QW structure give the best
performance at low injection current. However, at higher injection current,
2-QWs structure give the largest power output due to its higher total radiative
recombination rate and internal quantum efficiency (IQE) compared to other
structures. The 2-QWs structure also has less serious efficiency droop at high
current than 1-QW, which makes it an optimum structure for high-power LEDs.
