  Self-limiting oxidation of nanowires has been previously described as a
reaction- or diffusion-controlled process. In this letter, the concept of
finite reactive region is introduced into a diffusion-controlled model, based
upon which a two-dimensional cylindrical kinetics model is developed for the
oxidation of silicon nanowires and is extended for tungsten. In the model,
diffusivity is affected by the expansive oxidation reaction induced stress. The
dependency of the oxidation upon curvature and temperature is modeled. Good
agreement between the model predictions and available experimental data is
obtained. The developed model serves to quantify the oxidation in
two-dimensional nanostructures and is expected to facilitate their fabrication
via thermal oxidation techniques. https://doi.org/10.1016/j.taml.2016.08.002
