  Interconnect conductivity modeling is a critical aspect for modern chip
design. Surface scattering -- an important scattering mechanism in scaled
interconnects is usually captured using Fuchs-Sondheimer (FS) model which
offers the average behavior of the interconnect. However, to support the modern
interconnect structures (such as tapered geometries), modeling spatial
dependency of conductivity becomes important. In Part I of this work, we
presented a spatially resolved FS (SRFS) model for rectangular interconnects
derived from the fundamental FS approach. While the proposed SRFS model offers
both spatial-dependency of conductivity and its direct relationship with the
physical parameters, its complex expression is not suitable for incorporation
in circuit simulations. In this part, we build upon our SRFS model to propose a
circuit-compatible conductivity model for rectangular interconnects accounting
for 2D surface scattering. The proposed circuit-compatible model offers spatial
resolution of conductivity as well as explicit dependence on the physical
parameters such as electron mean free path (${\lambda}_0$), specularity ($p$)
and interconnect geometry. We validate our circuit-compatible model over a
range of interconnect width/height (and ${\lambda}_0$) and p values and show a
close match with the physical SRFS model proposed in Part I (with error <
0.7%). We also compare our circuit-compatible model with a previous spatially
resolved analytical model (appropriately modified for a fair comparison) and
show that our model captures the spatial resolution of conductivity and the
dependence on physical parameters more accurately. Finally, we present a
semi-analytical equation for the average conductivity based on our
circuit-compatible model.
