  We have studied the magnetoresistance (TMR) of tunnel junctions with
electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance
and TMR with the bias voltage can be exploited to obtain a precise information
on the spin and energy dependence of the density of states. Our analysis leads
to a quantitative description of the band structure of La2/3Sr1/3MnO3 and
allows the determination of the gap delta between the Fermi level and the
bottom of the t2g minority spin band, in good agreement with data from
spin-polarized inverse photoemission experiments. This shows the potential of
magnetic tunnel junctions with half-metallic electrodes for spin-resolved
spectroscopic studies.
