  This paper investigates the potentials of using a hybrid memristor CMOS
technology, called MeMOS, for the realisation of ternary adders. Ternary adders
exploit the qualitative advantage of multi-value storage capability of
memristors compared to conventional CMOS flip-flops storing only binary values
in one cell. Furthermore they carry out an addition in $O(1)$ and are therefore
considered. The MeMOS approach is compared to a CMOS solution for the ternary
adders using multi value memristors as registers concerning the achievable
latency and the energy consumption. It is shown that using the TEAM, VTEAM
model and a model considering commercially available memristors from Known the
approach of using CMOS ternary adders using memristors as multi-value register
memory is to prefer. MeMOS circuits have advantages for a static operation
mode, i.e. if they are operated after a reset.
