  Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted
magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15)
have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4
substrates, respectively. Utilizing a combined synthesis and characterization
system excluding the air and further optimizing the deposition parameters,
high-quality thin films could be obtained and be measured showing that they can
keep inactive-in-air up to more than 90 hours characterized by electrical
transport measurements. In comparison with films of x = 0.03 which possess
relatively higher resistivity, weaker magnetic performances, and larger energy
gap, thin films of x = 0.08 show better electrical and magnetic performances.
Strong magnetic anisotropy was found in films of x = 0.08 grown on
(La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost
solely on the film growth direction.
