  Topological insulators are immensely investigated for their surface states
related properties as these materials can be used for various spintronics,
quantum computing, and optoelectronics applications. In this perspective,
different thicknesses of bismuth selenide thin films are deposited on the 250
nm SiO2 substrate with the help of thermal deposition. The motive of this study
is to investigate the surface and bulk-related behaviour with different
thicknesses. The deposited films are characterized through GI-XRD (grazing
incidence X-ray diffractometer) and Raman spectroscopy, which ensure the
impurity less deposition. Further, the transport properties are investigated,
which shows thickness dependence of weak anti-localization effect (WAL) in the
system and proposed these Bi2Se3/SiO2 thin films as a topological Anderson
insulator (TAI).
