  A modified electron beam evaporator has been used judiciously to synthesize
TiN thin films with (111) preferred orientation. This new design involved in
creating local plasma by accelerating the secondary electrons emitted from the
evaporating ingot by a positively biased semi-cylindrical anode plate kept in
the vicinity and a jet of N2 gas has been focused towards the substrate as a
reactive gas. We have observed a preferred orientation (111) with 25 degree
angle to the surface normal and this was confirmed by pole figure analysis. The
phenomenon of preferred orientation (111) has been explained based on the rate
of evaporation. The residual stress by the classical sin2psi technique did not
yield any tangible result due to the preferred orientation. The hardness and
modulus measured by nanoindentation technique was around 19.5 GPa and 214 GPa.
The continuous multicycle indentation test on these films exhibited a stress
relaxation.
