  We study the photoinduced manipulation of charge carriers in monolayer
silicene subject to intense electromagnetic terahertz radiation. Considering
the Dirac cone approximation and going beyond the off resonant condition for
large frequencies of the radiation field, where only virtual photon processes
are allowed, we present the exact zero-momentum pseudospin polarization and
numerical results for the quasienergy band structure and time-averaged density
of states. We find that resonant processes, due to real photon emission and
absorbtion processes, induce a band inversion that qualitatively modifies the
quasienergy spectrum. These band structure changes manifest themselves as an
inversion of the averaged pseudospin polarization. Through the analysis of the
time-averaged density of states we find that effective photoinduced gap
manipulation can only be achieved in the intermediate and strong
matter-radiation coupling regime where the off resonant approximation breaks
down.
