  Diamond has always been adored as a jewel. Even more fascinating is its
outstanding physical properties; it is the hardest material known in the world
with the highest thermal conductivity. Meanwhile, when we turn to its
electrical properties, diamond is a rather featureless electrical insulator.
However, with boron doping, it becomes a p-type semiconductor, with boron
acting as a charge acceptor. Therefore the recent news of superconductivity in
heavily boron-doped diamond synthesized by high pressure sintering was received
with considerable surprise. Opening up new possibilities for diamond-based
electrical devices, a systematic investigation of these phenomena clearly needs
to be achieved. Here we show unambiguous evidence of superconductivity in a
diamond thin film deposited by a chemical vapor deposition (CVD) method.
Furthermore the onset of the superconducting transition is found to be 7.4K,
which is higher than the reported value in ref(7) and well above helium liquid
temperature. This finding establishes the superconductivity to be a universal
property of boron-doped diamond, demonstrating that device application is
indeed a feasible challenge.
