  The emerging paradigm of abundant-data computing requires real-time analytics
on enormous quantities of data collected by a mushrooming network of sensors.
Todays computing technology, however, cannot scale to satisfy such big data
applications with the required throughput and energy efficiency. The next
technology frontier will be monolithically integrated chips with three
dimensionally interleaved memory and logic for unprecedented data bandwidth
with reduced energy consumption. In this work, we exploit the atomically thin
nature of the graphene edge to assemble a resistive memory stacked in a
vertical three dimensional structure. We report some of the lowest power and
energy consumption among the emerging non-volatile memories due to an extremely
thin electrode with unique properties, low programming voltages, and low
current. Circuit analysis of the architecture using experimentally measured
device properties show higher storage potential for graphene devices compared
that of metal based devices.
