  To increase the scientific output of particle physics experiments, upgrades
are underway at all major accelerator facilities to significantly improve the
luminosity. Consequently, the solid-state detectors used in the experiments
will exhibit more severe radiation-induced damage. To ensure sufficiently long
sensor lifetimes, alternative materials to the established silicon sensors,
with improved resilience to radiation, are investigated. For one of the
promising candidate materials, silicon carbide, only recently a model
describing the radiation damage in technology aided computer design (TCAD)
simulations has been proposed.
  In this paper we present our latest achievements towards modeling radiation
damage of 4H-SiC in TCAD tools. We first verify the utilized TCAD framework
against published silicon data and then use it to approximate measurements of
neutron-irradiated 4H-SiC particle detectors. We are able to confirm in
simulations the measurement results, i.e., an almost flat capacitance as a
function of bias voltage and a decreasing forward current with increasing
particle fluence. Based on our simulations we are able to explain the latter by
trapped charge carriers that create a space charge region within the device.
