  We report on a theoretical study on the rise of radiation-induced
magnetoresistance oscillations in two-dimensional systems of massive Dirac
fermions. We study the bilayer system of monolayer graphene and hexagonal boron
nitride (h-BN/graphene) and the trilayer system of hexagonal boron nitride
encapsulated graphene (h-BN/graphene/h-BN). We extend the radiation-driven
electron orbit model that was previously devised to study the same oscillations
in two-dimensional systems of Schr\"odinger electrons (GaAs/AlGaAS
heterostructure) to the case of massive Dirac fermions. In the simulations we
obtain clear oscillations for radiation frequencies in the terahertz and
far-infrared bands. %which contrasts with the two-dimensional Schrodinger
electrons case, %that are mainly sensitive to microwave frequencies. We
investigate also the power and temperatures dependence. For the former we
obtain similar results as for Schr\"odinger electrons and predict the rise of
zero resistance states. For the latter we obtain a similar qualitatively
dependence but quantitatively different when increasing temperature. While in
GaAs the oscillations are wiped out in a few degrees, interestingly enough, for
massive Dirac fermions, we obtain observable oscillations for temperatures
above $100$ K and even at room temperature for the higher frequencies used in
the simulations.
