  The pixel detector is the innermost tracking device in CMS, reconstructing
interaction vertices and charged particle trajectories. The sensors located in
the innermost layers of the pixel detector must be upgraded for the ten-fold
increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase.
As a possible replacement for planar sensors, 3D silicon technology is under
consideration due to its good performance after high radiation fluence. In this
paper, we report on pre- and post- irradiation measurements for CMS 3D pixel
sensors with different electrode configurations. The effects of irradiation on
electrical properties, charge collection efficiency, and position resolution of
3D sensors are discussed. Measurements of various test structures for
monitoring the fabrication process and studying the bulk and surface
properties, such as MOS capacitors, planar and gate-controlled diodes are also
presented.
