  We examine the effect on the DC resistivity of small-q electron-phonon
scattering, in a system with the electronic topology of the high-T_c oxides.
Despite the fact that the scattering is dominantly forward, its contribution to
the transport can be significant due to ``ondulations'' of the bands in the
flat region and to the umpklapp process. When the extended van-Hove
singularities are sufficiently close to $E_F$ the acoustic branch of the
phonons contribute significantly to the transport. In that case one can obtain
linear $T$ dependent resistivity down to temperatures as low as 10 K, even if
electrons are scattered also by optical phonons of about 500 K as reported by
Raman measurements.
