  Variational quantum Monte Carlo calculations are reported for the bulk GaAs
semiconductor in order to present values for the ground-state energy, the
lattice constant, the bulk modulus, and some derived properties. The
statistical accuracy is significantly higher than the remaining differences to
the experimental values, especially for the total-energy upper bound. The
agreement with experiment is satisfactory. The results are also compared with
those of density functional calculations. The accuracy of our results is
comparable to the best of those calculations.
