  The thermal stability of most electronic and photo-electronic devices
strongly depends on the relationship between Schottky Barrier Height (SBH) and
temperature. In this paper, the possible of thermionic current depicted via
correct and reliability relationship between forward current and voltage is
consequently discussed, the intrinsic SBH insensitive to temperature can be
calculated by modification on Richardson- Dushman`s formula suggested in this
paper. The results of application on four hetero-junctions prove that the
method proposed is credible in this paper, this suggests that the I/V/T method
is a feasible alternative to characterize these heterojunctions.
