  We report calculations of high electric field transport for the case of a
strained Si/GeSi double heterostructure (DHS) considering transport along the
Si channel and by applying the analytical Fokker-Planck approach (FPA), where
the process is modeled as drift-diffusion in energy space. We limit ourselves
to electronic transport in the conduction band of the strained Si, where an
energy shift between the otherwise degenerate six energy valleys characterizes
the band alingment in the DHS. Intervalley phonon scatterings are considered
while intravalley acoustic phonon scattering is ignored, leading to results
valid for high enough temperatures. Our results are compared to previous
theoretical works where Monte Carlo simulations were applied. A reasonable
agreement between the two approaches is obtained in the high electric field
regime.
