  Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use
of the molecular beam epitaxy (MBE) system. The film has an extremely high
Curie temperature of around 940 K, although the Mn concentration is only about
3 ~ 5 %. Magnetization measurements were carried out in magnetic fields
parallel to the film surface up to 7 T. The magnetization process shows the
coexistence of ferromagnetic and paramagnetic contributions at low
temperatures, while the typical ferromagnetic magnetization process is mainly
observed at high temperatures because of the decrease of the paramagnetic
contributions. The observed transport characteristics show a close relation
between the magnetism and the impurity conduction. The double exchange
mechanism of the Mn-impurity band is one of the possible models for the high-TC
ferromagnetism in GaN:Mn.
