  We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological
crystalline insulator deposited by molecular beam epitaxy on the sidewalls of
wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI
shell with respect to the III-V core the lattice mismatch along the nanowire
axis is less than 4%. The Pb(1-x)Sn(x)Te solid solution is chosen due to the
topological crystalline insulator properties for some critical concentrations
of Sn (x >= 0.4). The IV-VI shells are grown with different compositions
spanning from binary SnTe, through Pb(1-x)Sn(x)Te with decreasing x value down
to binary PbTe (x = 0). The samples are analyzed by scanning transmission
electron microscopy, which reveals the presence of (110) or (100) oriented
binary PbTe and (100)Pb(1-x)Sn(x)Te on the sidewalls of wurtzite GaAs NWs.
