  The importance of a photon source that would be compatible with silicon
circuitry is crucial for data communication networks. A photon source with
energies ranging from UV to near infrared can be activated in Si as
originationg from defects related to dislocations, vacancies, strain induced
band edge transitions and quantum confinement effects. Using an etching method
developed in this work, one can also enhance selectively the UV-VIS, band edge
emission and emissions at telecom wavelengths, which are tunable depending on
surface treatment. Deuterium D2O etching favors near infrared emission with a
characteristic single peak at 1320 nm at room temperature. The result offers an
exciting solution to advanced microelectronics The method involves the
treatment of Si surface by deuterium Deuterium containing acid vapor, resulting
in a layer that emits at 1320 nm. Etching without deuterium, a strong band edge
emission can be induced at 1150 nm or an emission at 1550 nm can be created
depending on the engineered surface structure of silicon. Schottky diodes
fabricated on treated surfaces exhibit a strong rectifying characteristics in
both cases.
