  Understanding the interplay between the structure, composition and
opto-electronic properties of semiconductor nano-objects requires combining
transmission electron microscopy (TEM) based techniques with electrical and
optical measurements on the very same specimen. Recent developments in TEM
technologies allow not only the identification and in-situ electrical
characterization of a particular object, but also the direct visualization of
its modification in-situ by techniques such as Joule heating. Over the past
years, we have carried out a number of studies in these fields that are
reviewed in this contribution. In particular, we discuss here i) correlated
studies where the same unique object is characterized electro-optically and by
TEM, ii) in-situ Joule heating studies where a solid-state metal-semiconductor
reaction is monitored in the TEM, and iii) in-situ biasing studies to better
understand the electrical properties of contacted single nanowires. In
addition, we provide detailed fabrication steps for the silicon nitride
membranes crucial to these correlated and in-situ measurements.
