  We demonstrate anti-bunched emission from a lateral-light emitting diode.
Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at
cryogenic temperature in the pulsed low-current regime, by exploiting electron
injection through shallow impurities located in the diode depletion region.
Thanks to its simple fabrication scheme and to its modulation bandwidth in the
GHz range, we believe our devices are an appealing substitute for
highly-attenuated lasers in existing quantum-key-distribution systems. Our
devices outperform strongly-attenuated lasers in terms of multi-photon emission
events and can therefore lead to a significant security improvement in existing
quantum key distribution systems.
