  In this work, we calculate material gain for long wavelength III-nitride InN
and AlInN quantum dot (QD) structures. Strain and QD inhomogeneity are included
in the calculations. The study covers (800-2300 nm) wavelength range which is
important in optical communications. While p-doping is shown to be efficient to
increasing gain, changing QD size (especially QD radius) is more efficient to
vary wavelength. The results predicted that n-doped QD structures are promises
for broad band laser applications.
