  In this paper the effect of biaxial and uniaxial strain on the mobility of
single-layer MoS$_{2}$ for temperatures T $>$ 100 K is investigated. Scattering
from intrinsic phonon modes, remote phonon and charged impurities are
considered along with static screening. Ab-initio simulations are utilized to
investigate the strain induced effects on the electronic bandstructure and the
linearized Boltzmann transport equation is used to evaluate the low-field
mobility under various strain conditions. The results indicate that the
mobility increases with tensile biaxial and tensile uniaxial strain along the
armchair direction. Under compressive strain, however, the mobility exhibits a
non-monotonic behavior when the strain magnitude is varied. In particular, with
a relatively small compressive strain of 1% the mobility is reduced by about a
factor of two compared to the unstrained condition, but with a larger
compressive strain the mobility partly recovers such a degradation.
