  In order to improve the quality of thin film deposition by magnetron
discharges, particularly by an effective ionization of the sputtered vapor, we
developed an ionized physical vapor deposition method based on pre-ionized
pulsed magnetron discharges operating in microsecond range (1-50 microseconds)
leading to a lower breakdown delay, short fall time of the pulsed magnetron
current, lower than one microsecond, a high ion-to-neutral flux ratio at the
substrate, an arc free regime and good stability with very large
instantaneously power.The transition to the self-sputtering regime, the
reactive operation mode and the ion transport to the substrate can be modulated
by the current pulse shape and duration. High cathode current densities (1-20
A/cm2) are obtained and large pressure range operation (3-300 mTorr) is
demonstrated.
