  A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy
technique. Magnetization measurements show that this highly Mn-doped GaN film
exhibits ferromagnetism above room temperature. It is also revealed that the
high-temperature ferromagnetic state is significantly suppressed below 10 K,
accompanied by an increase of the electrical resistivity with decreasing
temperature. This observation clearly demonstrates a close relation between the
ferromagnetism with extremely high-Tc and the carrier transport in the Mn-doped
GaN film.
