  The present work reports the study of the optimized processing conditions of
Bi0.9La0.1Fe0.9Mn0.1O3 thin films, grown by RF sputtering on platinum metalized
silicon substrates. The combination of deposition at relatively low substrate
temperature followed by adequate ex situ annealing leads to thin films with
smooth surface morphology and the formation of a high-quality monophasic layer,
with the (100)c preferable orientation. The annealed films show ferroelectric
imprint.
