  We calculate the spin relaxation time of conduction electrons in n-doped bulk
gallium arsenide. We consider the Elliot-Yafet spin-relaxation mechanism,
driven by Coulombic-impurity and electron-electron scattering. We find that
these two scattering mechanisms result in relaxation times of equal order of
magnitude, but with disimilar dependences on doping density and temperature.
Our theoretical results are compared with experimentally measured spin
relaxation times in gallium arsenide.
