  We report the effect of 4f electron doping on structural, electrical and
magneto-transport properties of Dy doped half Heusler Y1-x(Dy)xPdBi (x =0, 0.2,
0.5, 1) thin films grown by pulsed laser deposition. The Dy doping leads to
lattice contraction which increases from 0% for the parent x =0 sample to
approx 1.3% for x=1 sample with increase in Dy doping. The electrical transport
measurements show a typical semi-metallic behaviour in the temperature range 3K
to 300K and a sharp drop in resistivity at low temperatures (less than 3K) for
all the samples. Magnetotransport measurements and Shubnikov de-Hass
oscillations at high magnetic fields demonstrate that for these topologically
non-trivial samples, Dy doping induced lattice contraction plays an active role
in modifying the Fermi surface, carrier concentration and the effective
electron mass. There is an uniform suppression of the onset of
superconductivity with increased Dy doping which is possibly related to the
increasing local exchange field arising from the 4f electrons in Dy. Our
results indicate that we can tune various band structure parameters of YPdBi by
f electron doping and strained thin films of Y1-x(Dy)xPdBi show surface
dominated relativistic carrier transport at low temperatures.
