  The temperature and magnetic field dependences of the anomalous Hall effect
(AHE) are studied in Mn delta-doped semiconductor heterostructures with a
two-dimensional hole gas in a quantum well interacting with the Mn layer. The
analysis of experimental data reveals four distinct temperature ranges
differing in the behavior of AHE. The Mn layer induces an inhomogeneity of the
hole gas leading to an interplay between the hopping and drift conductivities.
It is shown that at sufficiently low temperatures, hopping conductivity favors
the mechanisms of AHE related to the geometric (Berry-Pancharatnam) phase.
