  Fifteen years have passed since graphene was first isolated on the substrate
from bulk graphite. During that period, 2D layered materials with intrinsic
band gaps have been realized. Although many exciting results have been reported
for both their fundamental physics and applications, the discussion of 2D
electron device application to the future integrated circuit is still based on
the expectation of the inherently high properties that 2D materials ideally
possess. This review article focuses on the gate stack property, which is one
of most important building blocks in the field effect transistor. Starting from
the comparison of the 2D/SiO2 interface properties with the conventional
SiO2/Si interface properties, recent advances in the studies of gate stack
properties for bilayer graphene and MoS2 FETs are discussed. In particular, the
advantages and disadvantages of the 2D heterostructures with 2D insulator of
h-BN are emphasized. This review may provide conceptual and experimental
approaches for controlling the 2D heterointerface properties.
