  STT-MRAM with interfacial-anisotropy-type perpendicular MTJ (IPMTJ) is a
powerful candidate for the low switching energy design of STT-MRAM. In the
literature, the reading operation of STT-MRAM structured with IPMTJs have been
not studied until this time, in our knowledge. We investigated the reading
operation of STT-MRAM structured with IPMTJs. To enumerate the read operations
of the NVSenseAmp have successfully been performed a 2.5X reduction in average
low power and a 13X increase in average high speed compared with the previous
works.
