  The strain dependent functional properties of epitaxial transition metal
oxide films can be significantly modified via substrate selection. However,
large lattice mismatches preclude dislocation-free epitaxial growth on
ferroelectric substrates, whose strain states are modified by applied electric
fields. Here we overcome this mismatch problem by depositing an epitaxial film
of ferromagnetic La0.7Sr0.3MnO3 on a single crystal substrate of well lattice
matched SrTiO3 via a film of SrRuO3 that we subsequently dissolved, permitting
the transfer of unstrained La0.7Sr0.3MnO3 to a ferroelectric substrate of
0.68Pb(Mg1/3Nb2/3)O3 0.32PbTiO3 in a different crystallographic orientation.
Ferroelectric domain switching, and a concomitant ferroelectric phase
transition, produced large non volatile changes of magnetization that were
mediated by magnetic domain rotations at locations defined by the
microstructure - as revealed via high resolution vector maps of magnetization
constructed from photoemission electron microscopy data, with contrast from
x-ray magnetic circular dichroism. In future, our method may be exploited to
control functional properties in dislocation free epitaxial films of any
composition.
