  Valence subband and transport properties of p-type metal-oxide-semiconductor
(PMOS) inversion layer in uniaxially strained (110) and (111) Si channel have
been studied theoretically in this work. Equal energy lines, carrier
concentration effective mass, conductivity effective mass, and mobility are
calculated based on Luttinger-Kohn Hamiltonian [16]. Three compact expressions
of scattering rate are derived in this paper. The direction of applied uniaxial
stresses considered is in either parallel or perpendicular to channel. My
results show mobility is very sensitive to effective mass under different
stresses. The favorable mobility directions are found in (110) system with -3
GPa stress parallel to channel and +3 GPa stress perpendicular to channel.
