  The possibility of in-memory computing with volatile memristive devices,
namely, memristors requiring a power source to sustain their memory, is
demonstrated. We have adopted a hysteretic graphene-based field emission
structure as a prototype of volatile memristor, which is characterized by a
non-pinched hysteresis loop. Memristive model of the structure is developed and
used to simulate a polymorphic circuit implementing in-memory computing gates
such as the material implication. Specific regions of parameter space realizing
useful logic functions are identified. Our results are applicable to other
realizations of volatile memory devices.
