  We have studied the temperature dependence of the conductivity of a silicon
MOSFET containing sodium ions in the oxide above 20 K. We find the impurity
band resulting from the presence of charges at the silicon-oxide interface is
split into a lower and an upper band. We have observed activation of electrons
from the upper band to the conduction band edge as well as from the lower to
the upper band. A possible explanation implying the presence of Hubbard bands
is given.
