  We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for
specific lattice sites near $^{31}$P donors in silicon crystals at temperatures
below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden
electron-nuclear transitions leads to a pattern of narrow holes and peaks in
the ESR lines of $^{31}$P. The pattern originates from dynamic polarization the
$^{29}$Si nuclear spins near the donors via the solid effect. This method can
be used for initialization of qubits based on $^{29}$Si nuclear spins in the
all-silicon quantum computer. In comparison, polarization of $^{29}$Si
performed by pumping the allowed ESR transitions, did not create any patterns.
Instead, a single narrow spectral hole was burnt in the ESR line. The
difference is explained by a rapid spin diffusion during the microwave pumping
of the allowed transitions.
