  Antiferromagnets naturally exhibit three obvious advantages over ferromagnets
for memory device applications: insensitivity to external magnetic fields, much
faster spin dynamics (~THz) and higher packing density due to the absence of
any stray field. Recently, antiferromagnetic spintronics emerges as a
cutting-edge field in the magnetic community. The key mission of this rapidly
rising field is to steer the spins or spin axes of antiferromagnets via
external stimuli and then realize advanced devices based on their physical
property changes. Herein, the state of the art of antiferromagnetic spintronics
is presented. Subsequently, the history of ferromagnetic/ferroelectric
multiferroic composites is briefly revisited. Finally, we introduce an
ultralow-power, long-range, and magnetic-field-insensitive approach for
harnessing antiferromagnetic spins based on our recent experimental progress,
i.e., piezoelectric strain control. Relevant theoretical and experimental
studies have formed an attractive new branch in antiferromagnetic spintronics,
which we coin as antiferromagnetic piezospintronics.
