  Boron implantation with in-situ dynamic annealing is used to produce highly
conductive sub-surface layers in type IIa (100) diamond plates for the search
of a superconducting phase transition. Here we demonstrate that high-fluence
MeV ion-implantation, at elevated temperatures avoids graphitization and can be
used to achieve doping densities of 6 at.%. In order to quantify the diamond
crystal damage associated with implantation Raman spectroscopy was performed,
demonstrating high temperature annealing recovers the lattice. Additionally,
low-temperature electronic transport measurements show evidence of charge
carrier densities close to the metal-insulator-transition. After electronic
characterization, secondary ion mass spectrometry was performed to map out the
ion profile of the implanted plates. The analysis shows close agreement with
the simulated ion-profile assuming scaling factors that take into account an
average change in diamond density due to device fabrication. Finally, the data
show that boron diffusion is negligible during the high temperature annealing
process.
