  We report the fabrication and testing, at 4.2 K, of an SISFS device, where S,
F, and I denote a superconductor (Nb), a ferromagnetic material (permalloy),
and an insulator (AlOx), respectively. The F layer covers about one half of the
top electrode of the SIS Josephson junction and is positioned off-center.
Electric current, I _tr, along the S electrode can change the magnetization of
the F layer in such a way that, for one direction of I_tr, a magnetic flux
penetrates the junction perpendicular to the layers, whereas for the opposite
direction, the perpendicular magnetic flux can be removed. In the former state,
the modulation pattern of the Josephson critical current, Ic, in the magnetic
field, H, may acquire minimum near H=0, and restores its usual shape with
maximum in the second state. These states can be used for building a compact
cryogenic memory compatible with single flux quantum electronics.
