  This paper reports experiments investigating the reaction of H$_{2}$ with
uranium metal-oxide bilayers. The bilayers consist of $\leq$ 100 nm of
epitaxial $\alpha$-U (grown on a Nb buffer deposited on sapphire) with a
UO$_{2}$ overlayer of thicknesses of between 20 and 80 nm. The oxides were made
either by depositing via reactive magnetron sputtering, or allowing the uranium
metal to oxidise in air at room temperature. The bilayers were exposed to
hydrogen, with sample temperatures between 80 and 200 C, and monitored via
in-situ x-ray diffraction and complimentary experiments conducted using
Scanning Transmission Electron Microscopy - Electron Energy Loss Spectroscopy
(STEM-EELS). Small partial pressures of H$_{2}$ caused rapid consumption of the
U metal and lead to changes in the intensity and position of the diffraction
peaks from both the UO$_{2}$ overlayers and the U metal. There is an
orientational dependence in the rate of U consumption. From changes in the
lattice parameter we deduce that hydrogen enters both the oxide and metal
layers, contracting the oxide and expanding the metal. The air-grown oxide
overlayers appear to hinder the H$_{2}$-reaction up to a threshold dose, but
then on heating from 80 to 140 C the consumption is more rapid than for the
as-deposited overlayers. STEM-EELS establishes that the U-hydride layer lies at
the oxide-metal interface, and that the initial formation is at defects or
grain boundaries, and involves the formation of amorphous and/or
nanocrystalline UH$_{3}$. This explains why no diffraction peaks from UH$_{3}$
are observed. {\textcopyright British Crown Owned Copyright 2017/AWE}
