  The possible use of spin and magnets in place of charge and capacitors to
store and process information is well known. Magnetic tunnel junctions are
being widely investigated and developed for magnetic random access memories.
These are two terminal devices that change their resistance based on switchable
magnetization of magnetic materials. They utilize the interaction between
electron spin and magnets to read information from the magnets and write onto
them. Such advances in memory devices could also translate into a new class of
logic devices that offer the advantage of nonvolatile and reconfigurable
information processing over transistors. Logic devices having a transistor-like
gain and directionality could be used to build integrated circuits without the
need for transistor-based amplifiers and clocks at every stage. We review
device characteristics and basic logic gates that compute with spins and
magnets from the mesoscopic to the atomic scale, as well as materials,
integration, and fabrication challenges and methods.
