  The intense research for efficient low-temperature thermoelectric materials
motivates the exploration of innovative compounds and composite systems. This
study examines the effects of integrating low-dimensional titanium trisulfide
(TiS$_3$) into bulk tin-based halide perovskites (CsSnI$_3$) for use in
thermoelectric applications. The addition of small amounts of two-dimensional
titanium trisulfide (TiS$_3$) to bulk tin-based halide perovskites (CsSnI$_3$)
significantly enhanced the structural stability of the composite material and
suppressed oxidation processes. The CsSnI$_3$-TiS$_3$ composites demonstrated
stabilization of temperature-dependent electrical properties (conductivity and
Seebeck coefficient). This study provides valuable insights into the promising
approach of using low-dimensional TiS3 as an additive to stabilize the
thermoelectric performance of CsSnI$_3$.
