  Antiferromagnetic antiperovskites, where magnetically active 3$d$ metal
cations are placed in the octahedral corners of a perovskite structure, are in
the spotlight due to their intertwined magnetic structure and topological
properties. Especially their anomalous Hall conductivity, which can be
controlled by applied strain and/or electric field, makes them highly
attractive in different electronic applications. Here, we present the study and
theoretical understanding of a new antiperovskite compound that can offer
enormous opportunities in a broad set of applications. Using first-principles
calculations, we investigated the structure, lattice dynamics, noncollinear
magnetic ordering, and electronic behavior in the Vanadium-based antiperovskite
V$_3$AuN. We found an antiperovskite structure centered on N similar to the
Mn$_3A$N family as the structural ground state. In such a phase, a
\emph{Pm$\bar{3}$m} ground state was found in contrast to the \emph{Cmcm}
post-antiperovskite layered structure, as in the V$_3A$N, $A$ = Ga, Ge, As, and
P. We studied the lattice dynamics and electronic properties, demonstrating its
vibrational stability in the cubic structure and a chiral antiferromagnetic
noncollinear ordering as a magnetic ground state. Finally, we found that the
anomalous Hall conductivity, associated with the topological features induced
by the magnetic symmetry, is $\sigma_{xy}$ = $-$291 S$\cdot$cm$^{-1}$
($\sigma_{111}$ = $-$504 S$\cdot$cm$^{-1}$). The latter is the largest reported
in the antiferromagnetic antiperovskite family of compounds.
