  A Corbino ring geometry is utilized to analyze edge and bulk conductance of
InAs/GaSb quantum well structures. We show that edge conductance exists in the
trivial regime of this theoretically-predicted topological system with a
temperature insensitive linear resistivity per unit length in the range of 2
kOhm/um. A resistor network model of the device is developed to decouple the
edge conductance from the bulk conductance, providing a quantitative technique
to further investigate the nature of this trivial edge conductance,
conclusively identified here as being of n-type.
