  Monolayers of transition metal dichalcogenides (TMdC) are promising
candidates for realization of a new generation of optoelectronic devices. The
optical properties of these two-dimensional materials, however, vary from flake
to flake, or even across individual flakes, and change over time, all of which
makes control of the optoelectronic properties challenging. There are many
different perturbations that can alter the optical properties, including charge
doping, defects, strain, oxidation, and water intercalation. Identifying which
perturbations are present is usually not straightforward and requires multiple
measurements using multiple experimental modalities, which presents barriers
when attempting to optimise preparation of these materials. Here, we apply
highresolution photoluminescence and differential reflectance hyperspectral
imaging in situ to CVD-grown WS2 monolayers. By combining these two optical
measurements and using a statistical correlation analysis we are able to
disentangle three contributions modulating optoelectronic properties of these
materials: electron doping, strain and defects. In separating these
contributions, we also observe that the B-exciton energy is less sensitive to
variations in doping density than A-excitons.
