  We report on the fabrication and characterization of single crystal
field-effect transistors (FETs) based on diphenylbenzo diselenophene
(DPh-BDSe). These organic field-effect transistors (OFETs) function as
p-channel accumulation-mode devices. At room temperature, for the best devices,
the threshold voltage is less than -7V and charge carrier mobility is nearly
gate bias independent, ranging from 1cm2/Vs to 1.5 cm2/Vs depending on the
source-drain bias. Mobility is increased slightly by cooling below room
temperature and decreases below 280 K.
