  We report the synthesis and characterization of thin films of the Weyl
semimetal NbAs grown on GaAs (100) and GaAs (111)B substrates. By choosing the
appropriate substrate, we can stabilize the growth of NbAs in the (001) and
(100) directions. We combine x-ray characterization with high-angle annular
dark field scanning transmission electron microscopy to understand both the
macroscopic and microscopic structure of the NbAs thin films. We show that
these films are textured with domains that are tens of nanometers in size and
that, on a macroscopic scale, are mostly aligned to a single crystalline
direction. Finally, we describe electrical transport measurements that reveal
similar behavior in films grown in both crystalline directions, namely carrier
densities of $\sim 10^{21} - 10^{22} $
