  Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect
and the anisotropic magnetoresistance, both of which can be used to create
spin-transfer torques in a similar manner as the spin Hall effect. In this
paper we show how these effects can be used to reliably switch perpendicularly
magnetized layers and to move domain walls. A drift-diffusion treatment of the
anomalous Hall effect and the anisotropic magnetoresistance describes the spin
currents that flow in directions perpendicular to the electric field. In
systems with two ferromagnetic layers separated by a spacer layer, an in-plane
electric field cause spin currents to be injected from one layer into the
other, creating spin transfer torques. Unlike the related spin Hall effect in
non-magnetic materials, the anomalous Hall effect and the anisotropic
magnetoresistance allow control of the orientation of the injected spins, and
hence torques, by changing the direction of the magnetization in the injecting
layer. The torques on one layer show a rich angular dependence as a function of
the orientation of the magnetization in the other layer. The control of the
torques afforded by changing the orientation of the magnetization in a fixed
layer makes it possible to reliably switch a perpendicularly magnetized free
layer. Our calculated critical current densities for a representative
CoFe/Cu/FePt structure show that the switching can be efficient for appropriate
material choices. Similarly, control of the magnetization direction can drive
domain wall motion, as shown for NiFe/Cu/NiFe structures.
