  Transport properties of multigraphene layers on 6H-SiC substrates fabricated
by thermal graphitization of SiC were studied. The principal result is that
these structures were shown to contain a nearly perfect graphene layer situated
between the SiC substrate and multgraphene layer. It was found that the curves
of magnetoresistance and Shubnikov- de Haas oscillations shown the features,
typical for single-layered graphene. The low temperature resistance
demonstrated an increase with temperature increase, which also corresponds to a
behavior typical for single-layered graphene (antilocalization). However at
higher temperatures the resistance decreased with an increase of temperature,
which corresponds to a weak localization. We believe that the observed behavior
can be explained by a parallel combination of contributions to the conductivity
of single-layered graphene and of multigraphene, the latter allowing to escape
damages of the graphene by atmosphere effect.
