  A quantum transport model incorporating spin scattering processes is
presented using the non-equilibrium Green's function (NEGF) formalism within
the self-consistent Born approximation. This model offers a unified approach by
capturing the spin-flip scattering and the quantum effects simultaneously. A
numerical implementation of the model is illustrated for magnetic tunnel
junction devices with embedded magnetic impurity layers. The results are
compared with experimental data, revealing the underlying physics of the
coherent and incoherent transport regimes. It is shown that small variations in
magnetic impurity spin-states/concentrations could cause large deviations in
junction magnetoresistances.
