  Ab initio calculations predict that Be is a shallow acceptor in GaN. Its
thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence
resonant in the zincblende phase. Be incorporation is severely limited by the
formation of Be_3N_2. We show however that co-incorporation with reactive
species can enhance the solubility. H-assisted incorporation should lead to
high doping levels in MOCVD growth after post-growth annealing at about 850 K.
Be-O co-incorporation produces high Be and O concentrations at MBE growth
temperatures.
