  Dielectric layers are gradually being down-scaled in different electronic
devices like MOSFETs and Magnetic Tunnel Junctions (MTJ) with shrinking device
sizes. As a result, time dependent dielectric breakdown (TDDB) has become a
major issue in such devices. In this paper we propose a generalized way of
modeling the stress induced leakage current (SILC) and post breakdown current
(PBC) due to time dependent wear-out of the dielectric layer. We model the
traps formed in dielectric layer using Buttiker probe and incorporate the
Buttiker probe self-energies in standard self-consistent Non-Equilibrium Green
Function (NEGF) formalism in order to determine SILC and PBC. In addition, we
have shown the impact of break down in the dielectric layer on the spin current
and spin filtering characteristics of an MTJ. The proposed model is generic in
nature. It can be extended from MTJs and conventional CMOS technology to any
other devices with any type of single and multiple layers of dielectric
material(s).
