  The hybrid architecture of the Timepix (TPX) family of detectors enables the
use of different semiconductor sensors, most commonly silicon (Si), as well as
high-density materials such as Cadmium Telluride (CdTe) or Gallium Arsenide
(GaAs). For this purpose, we explore the potential of a silicon carbide (SiC)
sensor bump-bonded on a Timepix3 detector as a radiation imaging and particle
tracking detector. SiC stands as a radiation-hard material also with the
ability to operate at elevated temperatures up to several hundreds of degrees
Celsius. As a result, this sensor material is more suitable for radiation harsh
environments compared to conventional e.g., Si sensors. In this work, we
evaluate the response for precise radiation spectrometry and high-resolution
particle tracking of newly developed SiC Timepix3 detector which is built and
operated as a compact radiation camera MiniPIX-Timepix3 with integrated readout
electronics. Calibration measurements were conducted with mono-energetic proton
beams with energies of 13, 22, and 31 MeV at the U-120M cyclotron at the
Nuclear Physics Institute Czech Academy of Science (NPI CAS), Prague, as well
as 100 and 226 MeV at the Proton Therapy Center Czech (PTC) in Prague.
High-resolution pattern recognition analysis and single-particle spectral
tracking are used for detailed inspection and understanding of the sensor
response. Results include distributions of deposited energy and linear energy
transfer (LET) spectra. The spatial uniformity of the pixelated detector
response is examined in terms of homogeneously distributed deposited energy.
