  An analytical and numerical approach is developped to pinpoint the optimal
experimental conditions to irreversibly switch magnetization using surface
acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and
two switching mechanisms are considered. In precessional switching, a small
in-plane field initially tilts the magnetization and the passage of the SAW
modifies the magnetic anisotropy parameters through inverse magneto-striction,
which triggers precession, and eventually reversal. Using the micromagnetic
parameters of a fully characterized layer of the magnetic semiconductor
(Ga,Mn)(As,P), we then show that there is a large window of accessible
experimental conditions (SAW amplitude/wave-vector, field
amplitude/orientation) allowing irreversible switching. As this is a resonant
process, the influence of the detuning of the SAW frequency to the magnetic
system's eigenfrequency is also explored. Finally, another - non-resonant -
switching mechanism is briefly contemplated, and found to be applicable to
(Ga,Mn)(As,P): SAW-assisted domain nucleation. In this case, a small
perpendicular field is applied opposite the initial magnetization and the
passage of the SAW lowers the domain nucleation barrier.
