  Applications of quantum science to computing, cryptography and imaging are on
their way to becoming key next generation technologies. Owing to the high-speed
transmission and exceptional noise properties of photons, quantum photonic
architectures are likely to play a central role. A long-standing hurdle,
however, has been the realization of robust, device-compatible single photon
sources that can be activated and controlled on demand. Here we use strain
engineering to create large arrays of quantum emitters in two-dimensional
hexagonal boron nitride (hBN). The large energy gap inherent to this Van der
Waals material stabilizes the emitters at room temperature within nanoscale
regions defined by substrate-induced deformation of the flake. Combining
analytical and numerical modeling we show that emitter activation is likely the
result of carrier trapping in deformation potential wells localized near the
points where the hBN flake reaches the highest curvature. These findings,
therefore, hint at novel opportunities for the manipulation of single photon
sources through the combined control of strain and external electrostatic
potentials under ambient conditions.
