  Diamond holds promise to reshape ultrafast and high power electronics. One
such solid-state device is the diode avalanche shaper (DAS), which functions as
an ultrafast closing switch where closing is caused by the formation of the
streamer traversing the diode much faster than 10$^7$ cm/s. One of the most
prominent applications of DAS is in ultrawide band (UWB) radio/radar. Here we
simulate a diamond-based DAS and compare the results to a silicon-based DAS.
All DAS were simulated in mixed mode as ideal devices using the drift-diffusion
model. The simulations show that diamond DAS promises to outperform Si DAS when
sharpening kilovolt nanosecond input pulse. The breakdown field and streamer
velocity ($\sim$10 times larger in diamond as compared to those in Si) are
likely to be the major reasons enabling kV sub-50 ps switching using diamond
DAS.
