  Recently there is an increasing attention to electrically pumped room
temperature sub-wavelength plasmon sources because of their various potential
applications mainly in the integrated plasmonic field. In this paper, a
GaAs/AlGaAs quantum dot based waveguide integrated plasmonic nanolaser is
introduced and theoretically investigated. Using a semi-classical rate equation
model, performance of our nanolaser is studied and its characteristics are
presented in details. The proposed nanolaser has a tiny footprint of 0.25 um2,
room temperature operating condition and CMOS friendly process while having
remarkable output performance. The new structure generates 1uW output power
with 3.5mA injection current ( the threshold pump current is calculated to be
about 2.5uA ) in 850 nm and has wide modulation frequency of 10 THz in
threshold pumping rate, large Purcell factor about 3460 and high output
coupling ratio to the host plasmonic waveguide.
