  To meet high radiation challenge for detectors in future high-energy physics,
a novel 3D 4H-SiC detector was investigated. SiC detectors could potentially
operate in radiation harsh and room temperature environment because of its high
thermal conductivity and high atomic displacement threshold energy. 3D
structure, which decouples thickness and distance between electrodes, further
improves timing performance and radiation hardness of the detector. We
developed a simulation software - RASER (RAdiation SEmiconductoR) to simulate
the time resolution of planar and 3D 4H-SiC detectors with different parameters
and structures, and the reliability of the software is verified by comparing
time resolution results of simulation with data. The rough time resolution of
3D 4H-SiC detector was estimated, and the simulation parameters could be used
as guideline to 3D 4H-SiC detector design and optimization.
