  Individual relaxation dynamics of electrons and holes in optically pumped
semiconductors is rarely observed due to their overlap. Here we report the
individual dynamics of long-lived (~200 mks) holes observed at room temperature
in a 10 nm thick film of the 3D topological insulator (TI) Bi2Se3 coated with a
10 nm thick MgF2 layer using transient absorption spectroscopy in the UV-Vis
region. The ultraslow hole dynamics was observed by applying multiphoton
resonant pumping of massless Dirac fermions and bound valence electrons in
Bi2Se3 at a certain wavelength sufficient for their photoemission and
subsequent trapping at the Bi2Se3/MgF2 interface. The emerging deficit of
electrons in the film makes it impossible for the remaining holes to recombine,
thus causing their ultraslow dynamics measured at a specific probing
wavelength. We also found an extremely long rise time (~600 ps) for this
ultraslow optical response, which is due to the large spin-orbit coupling (SOC)
splitting at the valence band maximum and the resulting intervalley scattering
between the splitting components. The ultraslow hole dynamics in Bi2Se3 due to
the presence of the Bi2Se3/MgF2 interface is nevertheless much faster than the
known ultraslow electron dynamics at the Si/SiO2 interface, also induced by
multiphoton excitation in Si. The observed dynamics of long-lived holes is
gradually suppressed with decreasing Bi2Se3 film thickness for the 2D TI Bi2Se3
(film thickness 5, 4, and 2 nm) due to the loss of resonance conditions for
multiphoton photoemission caused by the gap opening at the Dirac surface state
nodes. This behavior indicates that the dynamics of massive Dirac fermions
predominantly determines the relaxation of photoexcited carriers for both the
2D topologically nontrivial and 2D topologically trivial insulator phases.
