  The electronic and magnetic structure of CrPS$_{4}$, a 2D magnetic
semiconductor is examined by employing the SCAN meta-GGA density functional. We
find the resulting magnetic moment and band gap are in excellent agreement with
experiment. From the bulk magnetic configurations, we confirm the
experimentally observed A-type antiferromagnetic (A-AFM) ordered ground state
with a magnetic moment of 2.78 $\mu_B$ per chromium atom and band gap of 1.34
eV. To gain insight into the evolution of the ground state with layers, the
total energy of each magnetic configuration is calculated for a variety of
thicknesses. Monolayer CrPS$_{4}$ is predicted to be a ferromagnetic insulator
with a band gap of 1.37 eV, and A-AFM for bilayer and trilayer, with band gaps
of 1.35 eV and 1.30 eV, respectively. The electronic structure is reported for
the single, two, three layer and bulk CrPS$_{4}$. Finally, we explore the
optical properties of the 2D structure and report the dielectric tensor
components and Kerr parameters for the monolayer.
