  Bandstructure properties in wurtzite quantum wells can change appreciably
with changing carrier density because of screening of quantum-confined Stark
effect. An approach for incorporating these changes in an InGaN
light-emitting-diode model is described. Bandstructure is computed for
different carrier densities by solving Poisson and k\cdotp equations in the
envelop approximation. The information is used as input in a dynamical model
for populations in momentum-resolved electron and hole states. Application of
the approach is illustrated by modeling device internal quantum efficiency as a
function of excitation.
