  Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy.
Transmission electron micrographs showed good crystal quality with individual
Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was
seen in as-grown samples. All samples studied exhibited ferromagnetism with
temperature dependent hysteresis loops in the magnetization accompanied by
metallic p-type conductivity with a strong anomalous Hall effect (AHE) up to
400 K (limited by the experimental setup). The anomalous Hall effect shows
hysteresis loops at low temperatures and above room temperature very similar to
those seen in the magnetization. The strong AHE with hysteresis indicates that
the holes interact with the Mn spins above room temperature. All samples are
metallic, which is important for spintronics applications.
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