  Current Induced Resistance Switching (CIS) was recently observed in thin
tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to
electromigration of metallic atoms in nanoconstrictions in the insulating
barrier. The CIS effect is here studied in TJs with two thin (20 \AA)
non-magnetic (NM) Ta electrodes inserted above and below the insulating
barrier. We observe resistance (R) switching for positive applied electrical
current (flowing from the bottom to the top lead), characterized by a
continuous resistance decrease and associated with current-driven displacement
of metallic ions from the bottom electrode into the barrier (thin barrier
state). For negative currents, displaced ions return into their initial
positions in the electrode and the electrical resistance gradually increases
(thick barrier state). We measured the temperature (T) dependence of the
electrical resistance of both thin- and thick-barrier states ($R_b$ and R$_B$
respectively). Experiments showed a weaker R(T) variation when the tunnel
junction is in the $R_b$ state, associated with a smaller tunnel contribution.
By applying large enough electrical currents we induced large irreversible
R-decreases in the studied TJs, associated with barrier degradation. We then
monitored the evolution of the R(T) dependence for different stages of barrier
degradation. In particular, we observed a smooth transition from tunnel- to
metallic-dominated transport. The initial degradation-stages are related to
irreversible barrier thickness decreases (without the formation of pinholes).
Only for later barrier degradation stages do we have the appearance of metallic
paths between the two electrodes that, however, do not lead to metallic
dominated transport for small enough pinhole radius.
