  We have used a simple, analytically solvable model to analyze the
characteristic s of dual-gate metal-oxide-semiconductor field-effect
transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes
ballistic dynamics of 2D electrons in an undoped channel between highly doped
source and drain. When applied to silicon n-MOSFETs, calculations show that the
voltage gain (necessary for logic applications) drops sharply at L ~ 10 nm,
while the conductance modulation remains sufficient for memory applications
until L ~ 4 nm.
