  The growth of single-layer MoS2 with chemical vapor deposition is an
established method that can produce large-area and high quality samples. In
this article, we investigate the geometrical and optical properties of hundreds
of individual single-layer MoS2 crystallites grown on a highly-polished
sapphire substrate. Most of the crystallites are oriented along the terraces of
the sapphire substrate and have an area comprised between 10 {\mu}m2 and 60
{\mu}m2. Differential reflectance measurements performed on these crystallites
show that the area of the MoS2 crystallites has an influence on the position
and broadening of the B exciton while the orientation does not influence the A
and B excitons of MoS2. These measurements demonstrate that differential
reflectance measurements have the potential to be used to characterize the
homogeneity of large area CVD grown samples.
