  Motivated by the possibility of a strain tuning effect on electronic
properties of graphene, the semimetal-Mott insulator transition process on the
uniaxial honeycomb lattice is numerically studied using Determinant Quantum
Monte Carlo. As our simulations are based on the half-filled repulsive Hubbard
model, the system is sign problem free. Herein, the temperature-dependent DC
conductivity is used to characterize electronic transport properties. The data
suggest that metallic is suppressed in the presence of strain. More
interestingly, within the finite-size scaling study, a novel antiferromagnetic
phase arises at around $U\sim U_{c}$. Therefore, a phase diagram generated by
the competition between interactions and strain is established, which may help
to expand the application of strain effect on graphene.
