  We show that the work function of exfoliated single layer graphene can be
modified by irradiation with swift (E_{kin}=92 MeV) heavy ions under glancing
angles of incidence. Upon ion impact individual surface tracks are created in
graphene on SiC. Due to the very localized energy deposition characteristic for
ions in this energy range, the surface area which is structurally altered is
limited to ~ 0.01 mum^2 per track. Kelvin probe force microscopy reveals that
those surface tracks consist of electronically modified material and that a few
tracks suffice to shift the surface potential of the whole single layer flake
by ~ 400 meV. Thus, the irradiation turns the initially n-doped graphene into
p-doped graphene with a hole density of 8.5 x 10^{12} holes/cm^2. This doping
effect persists even after heating the irradiated samples to 500{\deg}C.
Therefore, this charge transfer is not due to adsorbates but must instead be
attributed to implanted atoms. The method presented here opens up a new way to
efficiently manipulate the charge carrier concentration of graphene.
