  We briefly review the status of the application of carbon nanotubes (CNTs)
for future interconnects and present results concerning possible integration
schemes. Growth of single nanotubes at lithographically defined locations
(vias) has been achieved which is a prerequisite for the use of CNTs as future
interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a
resistance of 7.8 kOhm could be achieved for a single multi-walled CNT vertical
interconnect.
