  Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level
show an exponential decline with temperature matching with the steady-state
thin-film resistivity measured at 858 K (melting temperature). This suggests
that the free carrier activation mechanisms form a continuum in a large
temperature scale (300 K - 858 K) and the metastable amorphous phase can be
treated as a super-cooled liquid. The effective activation energy calculated
using the resistivity versus temperature data follow a parabolic behavior, with
a room temperature value of 333 meV, peaking to ~377 meV at ~465 K and reaching
zero at ~930 K, using a reference activation energy of 111 meV (3kBT/2) at
melt. Amorphous GST is expected to behave as a p-type semiconductor at Tmelt ~
858 K and transitions from the semiconducting-liquid phase to the
metallic-liquid phase at ~ 930 K at equilibrium. The simultaneous Seebeck (S)
and resistivity versus temperature measurements of amorphous-fcc mixed-phase
GST thin-films show linear S-T trends that meet S = 0 at 0 K, consistent with
degenerate semiconductors, and the dS/dT and room temperature activation energy
show a linear correlation. The single-crystal fcc is calculated to have dS/dT =
0.153 {\mu}V/K for an activation energy of zero and a Fermi level 0.16 eV below
the valance band edge.
