  The strain-induced magnetism is observed in single-layer MoS2 with atomic
single vacancies from density functional calculations. Calculated magnetic
moment is no less than 2muB per vacancy defect. The straininduced band gap
closure is concurrent with the occurrence of the magnetism. Possible physical
mechanism of the emergence of strain-induced magnetism is illustrated. We also
demonstrate the possibility to test the predicted magnetism in experiment. Our
study may provide an opportunity for the design of new type of memory-switching
or logic devices by using earth-rich nonmagnetic materials MoS2.
