  Sol-gel deposited (010) textured polycrystalline thin films of gallium
ferrite (GaFeO3 or GFO) on n-Si(100) and Pt/Si(111) substrates are
characterized for room temperature multiferroism. Structural characterization
using X-ray diffraction and Raman spectroscopy confirms formation of single
phase with nano-sized crystallites. Temperature dependent magnetization study
demonstrates ferri to paramagnetic transition at ~300 K. Room temperature
piezoresponse force microscopic analysis reveals local 180 degree phase
switching of ferroelectric domains at very high coercive field EC, ~ 1350 kV/cm
consistent with recent experimental and first-principles studies. Our study
opens up possibility of integrating polycrystalline GFO in novel room
temperature multiferroic devices.
