  Effectively tuning magnetic state by using current is essential for novel
spintronic devices. Magnetic van der Waals (vdW) materials have shown superior
properties for the applications of magnetic information storage based on the
efficient spin torque effect. However, for most of known vdW ferromagnets, the
ferromagnetic transition temperatures lower than room temperature strongly
impede their applications and the room-temperature vdW spintronic device with
low energy consumption is still a long-sought goal. Here, we realize the highly
efficient room-temperature nonvolatile magnetic switching by current in a
single-material device based on vdW ferromagnet Fe3GaTe2. Moreover, the
switching current density and power dissipation are about 300 and 60000 times
smaller than conventional spin-orbit-torque devices of magnet/heavymetal
heterostructures. These findings make an important progress on the applications
of magnetic vdW materials in the fields of spintronics and magnetic information
storage.
