  Sr-doped Bi2Se3 thin films was known as a potential candidate of topological
superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various
doping concentrations x were found to be dominated by weak antilocalization
(WAL) at low magnetic fields, whereas the classical MR, which originally
dominated the MR, was almost completely suppressed. In contrast, the MR of all
samples has been observed to be dominated by linear magnetoresistance (LMR) at
high magnetic fields. The LMR, having the linear dependence on carrier
mobility, can be successfully explained by the Parish-Littlewood model. This
indicates that LMR originates from mobility fluctuation induced by Sr dopant
atoms in doped Bi2Se3 films.
