  Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs
reveal both a two-dimensional metal-insulator transition (MIT) at moderate
temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at
low temperatures ($T~ <$ 1~K). Both were studied as a function of chemical
potential (carrier concentration $n_s$) controlled by gate voltage ($V_g$) and
magnetic field $B$ near the MIT. Fourier analysis of the low temperature
fluctuations reveals several fluctuation scales in $V_g$ that vary
non-monotonically near the MIT. At higher temperatures, $G(V_g,B)$ is similar
to large FETs and exhibits a MIT. All of the observations support the
suggestion that the MIT is driven by Coulomb interactions among the carriers.
