  We experimentally demonstrate DC functionality of graphene-based hot electron
transistors, which we call Graphene Base Transistors (GBT). The fabrication
scheme is potentially compatible with silicon technology and can be carried out
at the wafer scale with standard silicon technology. The state of the GBTs can
be switched by a potential applied to the transistor base, which is made of
graphene. Transfer characteristics of the GBTs show ON/OFF current ratios
exceeding 50.000.
