  We consider the bimolecular charge carrier recombination in amorphous organic
semiconductors having a special kind of energetic disorder where energy levels
for electrons and holes at a given transport site move in the same direction
with the variation of some disorder governing parameter (the parallel
disorder). This particular kind of disorder could be found in materials where
the dominant part of the energetic disorder is provided by the conformational
disorder. Contrary to the recently studied case of electrostatic disorder, the
conformational disorder, if spatially correlated, leads to the increase of the
recombination rate constant which becomes greater than the corresponding
Langevin rate constant. Probably, organic semiconductors with the dominating
conformational disorder represent the first class of amorphous organic
semiconductors where the recombination rate constant could overcome the
Langevin limit.
