  We introduce a design modification to conventional geometry of the cryogenic
three-terminal switch, the nanocryotron (nTron). The conventional geometry of
nTrons is modified by including parallel current-carrying channels, an approach
aimed at enhancing the device's performance in magnetic field environments. The
common challenge in nTron technology is to maintain efficient operation under
varying magnetic field conditions. Here we show that the adaptation of parallel
channel configurations leads to an enhanced gate signal sensitivity, an
increase in operational gain, and a reduction in the impact of superconducting
vortices on nTron operation within magnetic fields up to 1 Tesla. Contrary to
traditional designs that are constrained by their effective channel width, the
parallel nanowire channels permits larger nTron cross sections, further
bolstering the device's magnetic field resilience while improving
electro-thermal recovery times due to reduced local inductance. This
advancement in nTron design not only augments its functionality in magnetic
fields but also broadens its applicability in technological environments,
offering a simple design alternative to existing nTron devices.
