  We introduce a new scheme to realize suspended, multi-terminal graphene
structures that can be current annealed successfully to obtain uniform, very
high quality devices. A key aspect is that the bulky metallic contacts are not
connected directly to the part of graphene probed by transport measurements,
but only through etched constriction, which prevents the contacts from acting
invasively. The device high quality and uniformity is demonstrated by a
reproducibly narrow (delta_n ~ 10^9 cm^-2) resistance peak around charge
neutrality, by carrier mobility values exceeding 10^6 cm^2/V/s, by the
observation of integer quantum Hall plateaus starting at 30 mT and of symmetry
broken states at about 200 mT, and by the occurrence of a negative
multi-terminal resistance directly proving the occurrence of ballistic
transport. As these multi-terminal devices enable measurements that cannot be
done in a simpler two-terminal configuration, we anticipate that their use in
future studies of graphene-based systems will be particularly relevant.
