  Lattice deformations of InAs self-assembled quantum dots, which were grown on
(001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs),
were examined with an ion-channeling method in Rutherford backscattering
spectrometry. The channeling experiments demonstrated that the increase of the
nitrogen concentrations in the GaNAs SCLs caused the indium lattice
displacements along the [001] growth direction while those parallel to the
(001) crystal plane were kept unchanged
