  To clarify the mechanism of recently reported, ambipolar carrier injections
into quasi-one-dimensional Mott insulators on which field-effect transistors
are fabricated, we employ the one-dimensional Hubbard model attached to a
tight-binding model for source and drain electrodes. To take account of the
formation of Schottky barriers, we add scalar and vector potentials, which
satisfy the Poisson equation with boundary values depending on the drain
voltage, the gate bias, and the work-function difference. The current-voltage
characteristics are obtained by solving the time-dependent Schr\"odinger
equation in the unrestricted Hartree-Fock approximation. Its validity is
discussed with the help of the Lanczos method applied to small systems. We find
generally ambipolar carrier injections in Mott insulators even if the work
function of the crystal is quite different from that of the electrodes. They
result from balancing the correlation effect with the barrier effect. For the
gate-bias polarity with higher Schottky barriers, the correlation effect is
weakened accordingly, owing to collective transport in the one-dimensional
correlated electron systems.
