  Isolated, micro-meter sized diamonds are grown by micro-wave plasma chemical
vapour deposition technique on Si(001) substrates. Each diamond is uniquely
identified by markers milled in the Si substrate by Ga+ focused ion beam. The
morphology and micrograin structure analysis indicates that the diamonds are
icosahedral or bi-crystals. Icosahedral diamonds have higher (up to
$\sigma_\mathrm{h}$ = 2.3 GPa), and wider distribution
($\Delta\sigma_\mathrm{h}$ = 4.47 GPa) of hydrostatic stress built up at the
microcrystal grain boundaries, compared to the other crystals. The number and
spectral shape of SiV- color centers incorporated in the micro-diamonds is
analysed, and estimated by means of temperature dependent photoluminescence
measurements, and Montecarlo simulations. The Montecarlo simulations indicate
that the number of SiV- color centers is a few thousand per micro-diamond.
