  Achieving high temperature ferromagnetism by doping transition metals thin
films is seen as a viable approach to integrate spin-based elements in
innovative spintronic devices. In this work we investigated the effect of Fe
doping on structural properties of ZrO2 grown by atomic layer deposition (ALD)
using Zr(TMHD)4 for Zr and Fe(TMHD)3 for Fe precursors and ozone as oxygen
source. The temperature during the growth process was fixed at 350{\deg}C. The
ALD process was tuned to obtain Fe doped ZrO2 films with uniform chemical
composition, as seen by time of flight secondary ion mass spectrometry. The
control of Fe content was effectively reached, by controlling the ALD precursor
pulse ratio, as checked by X-ray photoemission spectroscopy (XPS) and
spectroscopic ellipsometry. From XPS, Fe was found in Fe3+ chemical state,
which maximizes the magnetization per atom. We also found, by grazing incidence
X-ray diffraction, that the inclusion of Fe impurities in ZrO2 induces
amorphization in thin ZrO2 films, while stabilizes the high temperature
crystalline tetragonal/cubic phase after rapid thermal annealing at 600{\deg}C.
