  We theoretically analyse D.C. resistivity($\rho$) in the Kondo-lattice model
using the powerful memory function approach. The complete temperature evolution
of $\rho$ is investigated using the W\"{o}lfle-G\"{o}tze expansion of the
memory function. The resistivity in this model originates due to spin-flip
magnetic scattering of conduction $s$-electron off the quasi-localized $d$ or
$f$ electron spins. We find the famous resistivity upturn at lower temperature
regime ($k_B T<<\mu_d$), where $\mu_d$ is the effective chemical potential of
$d$-electrons. In the high temperature regime $(\mu_d<<k_B T)$ we discover that
$\rho \propto T^{\frac{3}{2}}$. The worked out theory is quantitatively
compared with experimental data and reasonably good agreement is found.
