  In this work, the electrical properties of bilayer Antimonene with different
stacking orders are studied. Density functional theory with van der Waals (vdW)
correction is used to investigate the electrical performances. Two
configurations demonstrate considerable bandgaps, whereas, the bandgaps are
close to zero for other structures. The in-plane biaxial strain is applied to
modify the electrical properties. The bandgap reaches a maximum at a specific
strain level and then closes at more enormous compressive and tensile strains.
The energy of three valleys ($\Gamma$, Q, and K) in the conduction band are
explored with the strain. The conduction band minimum switches between these
valleys with the strain. Two bands also contribute to the valence band maximum,
and the energy of these two bands for various strains is investigated. Finally,
the effective mass for the valleys of the conduction band and the valence band
are obtained. The effective mass at $\Gamma$-valley demonstrates the lowest
effective mass.
