  The evolution of the density of states (DOS) and conductivity as function of
well controlled doping levels in OC_1C_10-poly(p-phenylene vinylene)
[OC_1C_10-PPV] doped by FeCl_3 and PF_6, and PF_6 doped polypyrrole (PPy-PF_6
have been investigated. At a doping level as high as 0.2 holes per monomer, the
former one remains non-metallic, while the latter crosses the metal-insulator
transition. In both systems a similar almost linear increase in DOS as function
of charges per unit volume c* has been observed from the electrochemical gated
transistor data. In PPy-PF_6, when compared to doped OC_1C_10-PPV, the energy
states filled at low doping are closer to the vacuum level; by the higher c* at
high doping more energy states are available, which apparently enables the
conduction to change to metallic. Although both systems on the insulating side
show log(sigma) proportional to T^-1/4 as in variable range hopping, for highly
doped PPy-PF_6 the usual interpretation of the hopping parameters leads to
seemingly too high values for the density of states.
