  This work presents characterization of focused ion beam induced deposition
(FIBID) of platinum using both rubidium and gallium ions. Under similar beam
energies, 8.5 keV for Rb$^+$ and 8.0 keV for Ga$^+$, and beam current near 10
pA, the two ion species deposited Pt films at similar rates. Energy-dispersive
x-ray spectroscopy shows that the Rb$^+$ FIBID-Pt consists of similar Pt
contents with much lower primary ion contents (5% Rb and 27% Ga) than the
Ga$^+$ FIBID-Pt. The deposited material was also measured to have a resistivity
of $8.1\times 10^4$ $\mathrm{\mu\Omega\cdot cm}$ for the Rb$^+$ FIBID-Pt and
$5.7\times 10^3$ $\mathrm{\mu\Omega\cdot cm}$ for the Ga$^+$ FIBID-Pt.
