  Recently a new type diluted magnetic semiconductor (BaK)(ZnMn)2As2 (BZA) with
high Cure temperature (Tc) was discovered showing independent spin and charge
doping mechanism. This makes BZA a promising material for spintronics devices.
Here we report for the first time the successful growth of BZA single crystal.
An Andreev reflection junction that can be used to evaluate spin polarization
was fabricated based on the BZA single crystal, a 66% spin polarization of the
BZA single crystal was hence obtained by Andreev reflection spectroscopy
analysis.
