  The phenomenon originating from spin-orbit coupling (SOC) provides
energy-efficient strategies for spin manipulation and device applications. The
broken inversion symmetry interface and resulting electric field induce a
Rashba-type spin-orbit field (SOF), which has been demonstrated to generate
spin-orbit torque for data storage applications. In this study, we found that
spin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 at
room temperature, which manifests as a negative magnetoresistance in the
vertical spin valve. Quantum transmission calculations based on an effective
model near the K valley of WSe2 confirm the precessional spin transport of
carriers under the giant SOF, which is estimated to be 650 T. In particular,
the valley-Zeeman SOF-induced spin dynamics was demonstrated to be tunable with
the layer number and stacking phase of WSe2 as well as the gate voltage, which
provides a novel strategy for spin manipulation and can benefit the development
of ultralow-power spintronic devices.
