  We study the peculiarities in current-phase relations (CPR) of the SIsFS
junction in the region of $0$ to $\pi $ transition. These CPR consist of two
independent branches corresponding to $0-$ and $\pi-$ states of the contact. We
have found that depending on the transparency of the SIs tunnel barrier the
decrease of the s-layer thickness leads to transformation of the CPR shape
going in the two possible ways: either one of the branches exists only in
discrete intervals of the phase difference $\varphi$ or both branches are
sinusoidal but differ in the magnitude of their critical currents. We
demonstrate that the difference can be as large as $10\%$ under maintaining
superconductivity in the s layer. An applicability of these phenomena for
memory and logic application is discussed.
