  Since last few years, research based on topological insulators (TI) is in
great interests due to intrinsic exotic fundamental properties and future
potential applications such as quantum computers or spintronics. The
fabrication of TI nanodevices and study on their transport properties mostly
focused on high quality crystalline nanowires or nanoribbons. Here we report
robust approach of Bi2Se3 nanowire formation from deposited flakes using ion
beam milling method. The fabricated Bi2Se3 nanowire devices have been employed
to investigate the robustness of topological surface state (TSS) to gallium ion
doping and any deformation in the material due to fabrication tools. We report
the quantum oscillations in magnetoresistance curves under the parallel
magnetic field. The resistance versus magnetic field curves have been studied
and compared with Aharonov-Bohm (AB) interference effects which further
demonstrate the transport through TSS. The fabrication route and observed
electronic transport properties indicate clear quantum oscillations and can be
exploited further in studying the exotic electronic properties associated with
TI based nanodevices.
