  In this work, we report on the electronic properties of solution-gated field
effect transistors (SGFETs) fabricated using large-area graphene. Devices
prepared both with epitaxially grown graphene on SiC as well as with chemical
vapor deposition grown graphene on Cu exhibit high transconductances, which are
a consequence of the high mobility of charge carriers in graphene and the large
capacitance at the graphene/water interface. The performance of graphene
SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies
and found to be clearly superior, confirming the potential of graphene SGFETs
for sensing applications in electrolytic environments.
