  We performed a systematic analysis of the tunneling magnetoresistance (TMR)
effect in single grain boundary junctions formed in epitaxial
La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic
fields H applied parallel to the grain boundary barrier, an ideal two-level
resistance switching behavior with sharp transitions is observed with a TMR
effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle
between H and the grain boundary results in differently shaped resistance vs H
curves. The observed behavior is explained within a model of magnetic domain
pinning at the grain boundary interface.
