  We demonstrate full charge control, narrow optical linewidths, and optical
spin pumping on single self-assembled InGaAs quantum dots embedded in a
$162.5\,\text{nm}$ thin diode structure. The quantum dots are just
$88\,\text{nm}$ from the top GaAs surface. We design and realize a p-i-n-i-n
diode that allows single-electron charging of the quantum dots at close-to-zero
applied bias. In operation, the current flow through the device is extremely
small resulting in low noise. In resonance fluorescence, we measure optical
linewidths below $2\,\mu\text{eV}$, just a factor of two above the transform
limit. Clear optical spin pumping is observed in a magnetic field of
$0.5\,\text{T}$ in the Faraday geometry. We present this design as ideal for
securing the advantages of self-assembled quantum dots -- highly coherent
single photon generation, ultra-fast optical spin manipulation -- in the thin
diodes required in quantum nano-photonics and nano-phononics applications.
