  Fermi-L\"owdin (FLO) self-interaction-correction (SIC) (FLOSIC) method uses
symmetric orthogonalized Fermi orbitals as localized orbitals in one-electron
SIC schemes resulting in a formal reduction in the scaling of SIC methods (e.g.
Perdew-Zunger SIC (PZSIC) method) but requires a set of Fermi orbital
descriptors used to define the FLOs which can be computationally taxing. Here,
we propose to simplify the SIC calculations using a selective orbital scaling
self-interaction correction (SOSIC) by removing SIE from a select set of
orbitals that are of interest. We illustrate the approach by choosing a valence
set of orbitals as active orbitals in the SOSIC approach. The results obtained
using the vSOSIC scheme are compared with those obtained with PZSIC which
corrects for SIE of all orbitals. The comparison is made for atomization
energies, barrier heights, ionization energies (absolute highest occupied
orbital [HOO] eigenvalues), exchange coupling constant and spin densities of
Cu-containing complexes, and vertical detachment energies (VDE) of water
cluster anions. The agreement between the two methods is within a few percent
for the majority of the properties. The MAE in the VDE (absolute HOO
eigenvalue) of water cluster anions with vSOSIC-PBE with respect to benchmark
CCSD(T) results is only 15 meV making vSOSIC-PBE an excellent alternative to
the CCSD(T) to obtain the VDE of water cluster anions. The vSOSIC calculation
on [Cu$_2$Cl$_6$]$^{2-}$ complex demonstrates that, in addition to the cost
savings from using fewer orbitals to account for SIC, the FOD optimization in
vSOSIC is also substantially smoother and faster.
