  The divacancies in SiC are a family of paramagnetic defects that show promise
for quantum communication technologies due to their long-lived electron spin
coherence and their optical addressability at near-telecom wavelengths.
Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is
a crucial prerequisite for such technologies, has not yet been demonstrated.
Here we demonstrate a high-fidelity spin-to-photon interface in isolated
divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that
divacancies in 4H-SiC have minimal undesirable spin-mixing, and that the
optical linewidths in our current sample are already similar to those of recent
remote entanglement demonstrations in other systems. Moreover, we find that
3C-SiC divacancies have millisecond Hahn-echo spin coherence time, which is
among the longest measured in a naturally isotopic solid. The presence of
defects with these properties in a commercial semiconductor that can be
heteroepitaxially grown as a thin film on shows promise for future quantum
networks based on SiC defects.
