  We demonstrate ion irradiation by argon or gallium as a wafer-scale
post-processing method to increase disorder in superconducting thin films. We
study several widely used superconductors, both single-elements and compounds.
We show that ion irradiation increases normal-state resistivity in all our
films, which is expected to enable tuning their superconducting properties, for
example, toward higher kinetic inductance. We observe an increase of
superconducting transition temperature for Al and MoSi, and a decrease for Nb,
NbN, and TiN. In MoSi, ion irradiation also improves the mixing of the two
materials. We demonstrate fabrication of an amorphous and homogeneous film of
MoSi with uniform thickness, which is promising, e.g., for superconducting
nanowire single-photon detectors.
