  We report that device architecture engineering has a substantial impact on
the reverse bias instability that has been reported as a critical issue in
commercializing perovskite solar cells. We demonstrate breakdown voltages
exceeding -15 V in typical pin structured perovskite solar cells via two steps:
i) using polymer hole transporting materials; ii) using a more
electrochemically stable gold electrode. While device degradation can be
exacerbated by higher reverse bias and prolonged exposure, our as-fabricated
perovskite solar cells completely recover their performance even after
stressing at -7 V for 9 hours both in the dark and under partial illumination.
Following these observations, we systematically discuss and compare the reverse
bias driven degradation pathways in perovskite solar cells with different
device architectures. Our model highlights the role of electrochemical reaction
rates and species in dictating the reverse bias stability of perovskite solar
cells.
