  Carrier Selective (CS) Silicon solar cells are increasingly explored as a low
cost alternative to PN junction Silicon solar cells. While the recent trends on
power conversion efficiency are encouraging, the temperature coefficient and
hence the power output under elevated temperatures are not well explored for
such solar cells. Here, we address this issue through detailed numerical
simulations to explore the influence of interface and material parameters on
the temperature coefficient. Our results indicate that irrespective of the
interface quality, the temperature coefficient of CS solar cells improves with
an increase in band discontinuities. Interestingly, contrary to the trends
related to efficiency, our results indicate that the temperature coefficient of
CS solar cells is more critically affected by the interface quality of the
minority carrier extraction layer than the majority carrier extraction layer.
These insights have important implications towards the choice of optimal
material and processing conditions for Si based CS solar cells.
