  Electrons, commonly moving along the applied electric field, acquire in
certain magnets a dissipationless transverse velocity. This spontaneous Hall
effect, discovered more than a century ago, has been understood in terms of the
time-reversal symmetry breaking by the internal spin-structure of a
ferromagnetic, noncolinear antiferromagnetic or skyrmionic form. Here we
identify previously overlooked robust Hall effect mechanism arising from
collinear antiferromagnetism combined with nonmagnetic atoms at
non-centrosymmetric positions. We predict a large magnitude of this crystal
Hall effect in a room-temperature collinear antiferromagnet RuO$_2$ and
catalogue, based on our symmetry rules, extensive families of material
candidates. We show that the crystal Hall effect is accompanied by the
possibility to control its sign by the crystal chirality. We illustrate that
accounting for the full magnetization density distribution instead of the
simplified spin-structure sheds new light on symmetry breaking phenomena in
complex magnets and opens an alternative avenue towards quantum materials
engineering for low-dissipation nanoelectronics.
