  We have studied the electronic, magnetic and linear phonon dispersion
behavior of Phosphorene monolayer using rst principle based ab initio method.
Phosphorene monolayer is a semiconducting system with a dimensional dependent
variable range of band gap. Vacancy has been done to study the geometry and
physical behavior of the monolayer system. Pristine, vacancy induced monolayer
and vacancy induced doped monolayer are included in the calculation. Dopant
concentration has been well checked via optimization algorithm to maintain the
dilute magnetic semiconducting behavior of the monolayer system. Density of
states and partial density of state indicates the contribution of individual
orbitals in the system. Band closing nature in observed in vacancy and doped
vacancy states indicating closed dense states and metallic behavior of the
perturbed phases. Both antiferromagnetic and ferromagnetic ordering is included
in our calculation to get a charm of both ordering in the physical properties
of the system. Landau energy level distribution is mapped via Fermi surface
with linear dispersion relation in terms of phonon vibrational density of
states and linear dispersion relations. The results of linear phonon density of
states corroborating with electronic density of states.
