  We report the synthesis of single and bi layer graphene films by low pressure
chemical vapor deposition technique on Cu and Au substrates. The as grown films
were characterized by transmission electron microscopy, scanning electron
microscopy and Raman spectroscopy techniques. The large lateral area graphene
deposited on Cu can easily be transferred on Si SiO2. In the case of Au
substrate both the adsorption and diffusion-precipitation leads to the growth
of graphene.
