  We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with
a width close to the critical one $d_c$, corresponding to the topological phase
transition and graphene like band structure in view of their applications for
Quantum Hall Effect (QHE) resistance standards. We show that in the case of
inverted band ordering, the coexistence of conducting topological helical edge
states together with QHE chiral states degrades the precision of the resistance
quantization. By experimental and theoretical studies we demonstrate how one
may reach very favorable conditions for the QHE resistance standards: low
magnetic fields allowing to use permanent magnets ( B $\leq$ 1.4T) and
simultaneously realtively high teperatures (liquid helium, T $\geq$ 1.3K). This
way we show that HgTe QW based QHE resistance standards may replace their
graphene and GaAs counterparts and pave the way towards large scale fabrication
and applications of QHE metrology devices.
