  Spin-transfer-torque random access memory (STT-RAM) is a promising candidate
for the next-generation of random-access-memory due to improved scalability,
read-write speeds and endurance. However, the write pulse duration must be long
enough to ensure a low write error rate (WER), the probability that a bit will
remain unswitched after the write pulse is turned off, in the presence of
stochastic thermal effects. WERs on the scale of 10$^{-9}$ or lower are
desired. Within a macrospin approximation, WERs can be calculated analytically
using the Fokker-Planck method to this point and beyond. However, dynamic
micromagnetic effects within the bit can affect and lead to faster switching.
Such micromagnetic effects can be addressed via numerical solution of the
stochastic Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. However,
determining WERs approaching 10$^{-9}$ would require well over 10$^{9}$ such
independent simulations, which is infeasible. In this work, we explore
calculation of WER using "rare event enhancement" (REE), an approach that has
been used for Monte Carlo simulation of other systems where rare events
nevertheless remain important. Using a prototype REE approach tailored to the
STT-RAM switching physics, we demonstrate reliable calculation of a WER to
10$^{-9}$ with sets of only approximately 10$^{3}$ ongoing stochastic LLGS
simulations, and the apparent ability to go further.
