  The peculiarities and the possibility of a control of exciton condensed pulse
movement in semiconductor double quantum well under the slot in the metal
electrode are studied. The condensed phase is considered phenomenologically
with the free energy in Landau-Ginzburg form taking into account the finite
value of the exciton lifetime. It was shown that the exciton condensed phase
pulse in the presence of an external linear potential moves along the slot
direction with a constant value of a maximum density during exciton lifetime,
while the exciton gas phase pulse is blurred. The penetration of the exciton
condensed phase pulse through the barrier and its stopping by the barrier are
studied. Also, it was shown that the exciton pulse in the condensedphase can be
amplified and recovered after damping by imposing an additional laser pulse.
Solutions for the system of excitons in double quantum well under the slot in
the electrode under steady-state irradiation in the form of bright and dark
autosolitons were found.
