  A solid-state quantum emitter is one of the indispensable components for
optical quantum technologies. Ideally, an emitter should have a compatible
wavelength for efficient coupling to other components in a quantum network. It
is therefore essential to understand fluorescent defects that lead to specific
emitters. In this work, we employ density functional theory (DFT) to
demonstrate the calculation of the complete optical fingerprints of quantum
emitters in the two-dimensional material hexagonal boron nitride. These
emitters are of great interest, yet many of them are still to be identified.
Our results suggest that instead of comparing a single optical property, such
as the commonly used zero-phonon line energy, multiple properties should be
used when comparing theoretical simulations to the experiment. This way, the
entire electronic structure can be predicted and quantum emitters can be
designed and tailored. Moreover, we apply this approach to predict the
suitability for using the emitters in specific quantum applications,
demonstrating through the examples of the Al$_{\text{N}}$ and
P$_{\text{N}}$V$_{\text{B}}$ defects. We therefore combine and apply DFT
calculations to identify quantum emitters in solid-state crystals with a lower
risk of misassignments as well as a way to design and tailor optical quantum
systems. This consequently serves as a recipe for classification and the
generation of universal solid-state quantum emitter systems in future hybrid
quantum networks.
