  We report on the experimental demonstration and electrical characterization
of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The
back-gated transistors are fabricated from atomically precise and highly
aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer
process holds the promise of scalable device fabrication with atomically
precise nanoribbons. The channels of the FETs are approximately 30 times longer
than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs
is high, so that transport can be assumed well-above the percolation threshold.
The long channel transistors exhibit a maximum I$_{ON}$/I$_{OFF}$ current ratio
of 87.5.
