  We theoretically show that buckled two-dimensional graphene-like materials
(silicene and germanene) subjected to a femtosecond strong optical pulse can be
controlled by the optical field component normal to their plane. In such strong
fields, these materials are predicted to exhibit non-reciprocal reflection,
optical rectification and generation of electric currents both parallel and
normal to the in-plane field direction. Reversibility of the conduction band
population is also field- and carrier-envelope phase controllable. There is a
net charge transfer along the material plane that is also dependent on the
normal field component. Thus a graphene-like buckled material behaves
analogously to a field-effect transistor controlled and driven by the electric
field of light with subcycle (femtosecond) speed.
