  Transition metal dichalcogenides (TMDs) are optically active layered
materials providing potential for fast optoelectronics and on-chip photonics.
We demonstrate electrically driven single-photon emission from localised sites
in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this,
we fabricate a light emitting diode structure comprising single layer graphene,
thin hexagonal boron nitride and TMD mono- and bi-layers. Photon correlation
measurements are used to confirm the single-photon nature of the spectrally
sharp emission. These results present the TMD family as a platform for hybrid,
broadband, atomically precise quantum photonics devices.
