  This paper reports the results presented in an invited poster during the
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023
held in Sorrento, Italy. The suitability of scanning probe methods based on
atomic force microscopy (AFM) measurements is explored to investigate with high
spatial resolution the elementary cell of 4H-SiC power MOSFETs. The
two-dimensional (2D) cross-sectional maps demonstrated a high spatial
resolution of about 5 nm using the SSRM capabilities. Furthermore, the SCM
capabilities enabled visualizing the fluctuations of charge carrier
concentration across the different parts of the MOSFETs elementary cell.
