  Ferroelectric tunnel junction devices based on ferroelectric thin films of
solid solutions of hafnium dioxide can enable CMOS integration of ultra-low
power ferroelectric devices with potential for memory and emerging computing
schemes such as in-memory computing and neuromorphic applications. In this
work, we present ferroelectric tunnel junctions based on
Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ with materials and processes compatible with CMOS
back-end-of-line integration. We show a device architecture based on
W-Hf$_{0.5}$Zr$_{0.5}$O$_{2}$-Al$_{2}$O$_{3}$-TiN stacks featuring low
temperature annealing at 400{\deg}C with performance comparable to those
obtained with higher temperature annealing conditions.
