  The negative-U impurity stripes confining the edge channels of semiconductor
quantum wells are shown to allow the effective cooling inside in the process of
the spin-dependent transport, with the reduction of the electron-electron
interaction. The aforesaid promotes also the creation of composite bosons and
fermions by the capture of single magnetic flux quanta on the edge channels
under the conditions of low sheet density of carriers, thus opening new
opportunities for the registration of the quantum kinetic phenomena in weak
magnetic fields at high temperatures up to the room temperature. As a certain
version noted above we present the first findings of the high temperature de
Haas-van Alphen, 300K, quantum Hall, 77K, effects as well as quantum
conductance staircase in the silicon sandwich structure that represents the
ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers
heavily doped with boron on the n-type Si (100) surface.
