  The efficiency and operating range of a photonic crystal laser is improved by
passivating the InGaAs quantum well (QW) gain medium and GaAs membrane using an
(NH4)S treatment. The passivated laser shows a four-fold reduction in
nonradiative surface recombination rate, resulting in a four-fold reduction in
lasing threshold. A three-level carrier dynamics model explains the results and
shows that lasing threshold is as much determined by surface recombination
losses as by the cavity quality factor (Q). Surface passivation therefore
appears crucial in operating such lasers under practical conditions.
