  In this work we report experiments on defined by shallow etching narrow Hall
bars. The magneto-transport properties of intermediate mobility two-dimensional
electron systems are investigated and analyzed within the screening theory of
the integer quantized Hall effect. We observe a non-monotonic increase of Hall
resistance at the low magnetic field ends of the quantized plateaus, known as
the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow
chemical etching the overshoot effect becomes more pronounced at elevated
temperatures. We observe the overshoot effect at odd and even integer plateaus,
which favor a spin independent explanation, in contrast to discussion in the
literature. In a second set of the experiments, we investigate the overshoot
effect in gate defined Hall bar and explicitly show that the amplitude of the
overshoot effect can be directly controlled by gate voltages. We offer a
comprehensive explanation based on scattering between evanescent incompressible
channels.
