  Non-collinear antiferromagnetic materials have received dramatically
increasing attention in the field of spintronics as their exotic topological
features such as the Berry-curvature-induced anomalous Hall effect and possible
magnetic Weyl states could be utilized in future topological antiferromagnetic
spintronic devices. In this work, we report the successful integration of the
antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By
optimizing growth, we realized the large anomalous Hall effect with small
switching magnetic fields of several tens mT fully comparable to those of bulk
Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel
magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are
similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More
importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn
thin films can be manipulated by electric fields applied onto the ferroelectric
materials, thus demonstrating the feasibility of Mn3Sn-based topological
spintronic devices operated in an ultralow power manner.
