  We demonstrate current-induced displacement of ferromagnetic domain walls in
sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored
by measuring the extraordinary Hall effect, is induced at zero applied magnetic
field and its direction is reversed when the current is reversed. We find that
current density in the range of 10^9 - 10^10 A/m^2 is sufficient for
domain-wall displacement when the depinning field varies between 50 to 500 Oe.
These results indicate relatively high efficiency of the current in displacing
domain walls which we believe is related to the narrow width ~3 nm of domain
walls in this compound.
