  In this paper, we study the quantum properties of a bilayer graphene with
(asymmetry) line defects. The localized states are found around the line
defects. Thus, the line defects on one certain layer of the bilayer graphene
can lead to an electric transport channel. By adding a bias potential along the
direction of the line defects, we calculate the electric conductivity of
bilayer graphene with line defects using Landauer-B\"{u}ttiker theory, and show
that the channel affects the electric conductivity remarkably by comparing the
results with those in a perfect bilayer graphene. This one-dimensional line
electric channel has the potential to be applied in the nanotechnology
engineering.
