  The magnetoelectronic coupling can be defined as cross-domain coupling
between electronic and magnetic properties, where modulation in magnetic
properties changes the electronic properties. In this letter, an explicit
experimental evidence of magnetoelectronic coupling is presented, which is
uncovered from oscillatory Hall effect response in Hall measurement. The strain
gradient in a MgO (1.8 nm)/p-Si (~400 nm) freestanding sample leads to transfer
of electrons (~5X10^18 cm^-3) from valence to conduction band due to
flexoelectronic charge separation in the p-Si layer. The resulting
flexoelectronic polarization gives rise to temporal magnetic moment from
dynamical multiferroicity. The external magnetic field changes the net temporal
magnetic moment, which causes modulations in charge carrier concentration and
oscillatory Hall effect. The period of oscillatory Hall response is 1.12 T,
which is attributed to the magnitude of temporal magnetic moment. The discovery
of oscillatory Hall effect adds a new member to the family of Hall effects.
