  Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both >
200 K on-chip ultrafast polarized single-photon generation and the
investigation of high temperature semiconductor QD photophysics. In this work,
we report progress in the growth of a-plane InGaN QDs with a
quasi-two-temperature method, which produces smooth epilayers and significantly
reduced carrier trapping sites in the proximity of the QDs. Optical
characterization has confirmed the ability of such QDs to emit polarized single
photons and we have recorded a ~ 45% shorter average radiative lifetime and 65%
reduction in the slow-timescale spectral diffusion compared to previous QDs.
This growth method is an important development of the non-polar a-plane InGaN
platform, opening up more possibilities in single-photon, lasing, and
fundamental investigations.
