  We report the growth of highly c-axis oriented topological insulator (TI)
BiSbTe1.5Se1.5 (BSTS) thin films by pulsed laser deposition (PLD) technique.
The various growth parameters such as substrate temperature, Argon pressure in
the deposition chamber and target to substrate distance are tuned to obtain the
optimized conditions essential for stoichiometric and bulk insulating TI thin
films. These films are highly c-axis oriented and exhibit all the four Raman
modes characteristic to the R-3m space group. The quality of the deposited thin
films is investigated using X-ray diffraction for crystallinity, Raman
spectroscopy for lattice dynamics, morphological studies using scanning
electron microscope and compositional analysis using Energy dispersive X-ray
spectroscopy. Resistance vs temperature measurements confirm bulk insulating
nature of the prepared thin films and magnetoresistance data exhibits the
phenomena of weak antilocalization with a large phase coherence length.
