  The optical pumping NMR effect in the compensated semiconductor InP:Fe has
been investigated in terms of the dependences of photon energy (E_p), helicity
(sigma+-), and exposure time (tau_L) of infrared lights. The {31}P and {115}In
signal enhancements show large sigma+- asymmetries and anomalous oscillations
as a function of E_p. We find that (i) the oscillation period as a function of
E_p is similar for {31}P and {115}In and almost field independent in spite of
significant reduction of the enhancement in higher fields. (ii) A
characteristic time for buildup of the {31}P polarization under the light
exposure shows strong E_p-dependence, but is almost independent of sigma+-.
(iii) The buildup times for {31}P and {115}In are of the same order (10^3 s),
although the spin-lattice relaxation times (T_1) are different by more than
three orders of magnitude between them. The results are discussed in terms of
(1) discrete energy spectra due to donor-acceptor pairs (DAPs) in compensated
semiconductors, and (2) interplay between {31}P and dipolar ordered indium
nuclei, which are optically induced.
