  We report on theoretical and experimental study of the spin polarization
recovery and Hanle effect for the charge carriers interacting with the
fluctuating nuclear spins in the semiconductor structures. We start the
theoretical description from the simplest model of static and isotropic nuclear
spin fluctuations. Then we describe the modification of the polarization
recovery and Hanle curves due to the anisotropy of the hyperfine interaction,
finite nuclear spin correlation time, and the strong pulsed spin excitation.
For the latter case, we describe the resonance spin amplification effect in the
Faraday geometry and discuss the manifestations of the quantum Zeno effect. The
set of the experimental results for various structures and experimental
conditions is chosen to highlight the specific effects predicted theoretically.
We show that the spin polarization recovery is a very valuable tool for
addressing carrier spin dynamics in semiconductors and their nanostructures.
