  Guided by the internal-reference rule and the known band offsets in III-V and
II-VI diluted magnetic semiconductors, we discuss the feasibility of obtaining
p-type conductivity, required for the carrier-induced ferromagnetism, as well
as the cases for which the doping by shallow impurities may lead to the
ferromagnetism driven by the double exchange. We consider the dependence of
kinetic exchange on the p-d hybridization, on the electronic configurations of
the magnetic ions, and on the energies of the charge transfer between the
valence band of host materials and the magnetic ions. In the case of Mn-based
II-VI compounds, the doping by acceptors is necessary for the hole-induced
ferromagnetism. The latter is, however, possible without any doping for some of
Mn-, Fe- or Co-based III-V magnetic semiconductors. In nitrides with Fe or Co
carrier-induced ferromagnetism with T_C>300K is expected in the presence of
acceptor doping.
