  The segregation of As+ ions implanted into thin Er films deposited on n-Si
substrates is studied after ErSi2-x formation. The same lowering of the
effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate
annealing temperatures, regardless of the redistribution of As dopants at the
ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly
enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH
can be further reduced. This process enables the formation of very low
effective SBH ErSi2-x/n-Si contacts with a low thermal budget.
