  This is an overview of current-induced spin polarization in gyrotropic
semiconductor nanostructures. Such a spin polarization as response to a charge
current may be classified as the inverse of the spin-galvanic effect, and
sometimes is called as magneto-electrical effect or Edelstein
(Rashba-Edelstein) effect. Apart from reviewing the experimental status of
affairs, we have provided a detailed theoretical description of both effects in
terms of a phenomenological model of spin-dependent relaxation processes, and
an alternative theoretical approach based on the quasi-classical Boltzmann
equation.
