  The effect of spin-orbit interaction on electron transport properties of a
cross-junction structure is studied. It is shown that it results in spin
polarization of left and right outgoing electron waves. Consequently, incoming
electron wave of a proper polarization induces voltage drop perpendicularly to
the direct current flow between source and drain of the considered
four-terminal cross-structure. The resulting Hall-like resistance is estimated
to be of the order of 10^-3 - 10^-2 h/e^2 for technologically available
structures. The effect becomes more pronounced in the vicinity of resonances
where Hall-like resistance changes its sign as function of the Fermi energy.
