  We present a method to fabricate tensile-strained germanium-on-insulator
(GOI) substrates using heteroepitaxy and layer transfer techniques. The
motivation is to obtain a high-quality wafer-scale GOI platform suitable for
silicon-compatible optoelectronic device fabrication. Crystal quality is
assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A
biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device
manufacturing is demonstrated through fabrication and characterization of
metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55
{\mu}m. The substrate fabrication process is compatible with complementary
metal-oxide-semiconductor manufacturing and represents a potential route to
wafer-scale integration of silicon-compatible optoelectronics.
