  We present results of variational calculations of the binding energy of a
neutral donor in a quantum well in the presence of a magnetic field tilted
relative to the QW plane. Assuming that the donor is located in the center of
the QW, we perform calculations for parameters typical of a II-VI wide-gap
semiconductor heterostructure, using as an example the case of a rectangular
CdTe quantum well with CdMgTe barriers. We present the dependence of the
binding energy of a neutral donor on the tilt angle and on the magnitude of the
applied magnetic filed. As a key result, we show that measurement of the
binding energy of a donor at two angles of the magnetic field with respect to
the quantum well plane can be used to unambiguously determined the conduction
band offset of the materials building up heterostructure.
