  Carrier Multiplication (CM) is a Coulomb-driven non-radiative recombination
mechanism which leads to the generation of multiple electron-hole pairs after
absorption of a single high-energy photon. Recently a new CM process, termed
space separated quantum cutting, was introduced to explain a set of new
experiments conducted in dense arrays of silicon nanocrystals. The occurrence
of this effect was hypothesized to generate the formation of Auger unaffected
multiexciton configurations constituted by single electron-hole pairs
distributed on different interacting naocrystals. In this work we discuss
ab-initio results obtained by our group in the study of CM effects in systems
of strongly interacting silicon nanocrystals. By solving a set of rate
equations, we simulate the time evolution of the number of electron-hole pairs
generated in dense arrays of silicon nanocrystals after absorption of high
energy photons, by describing the circumstances under which CM dynamics can
lead to the generation of Auger unaffected multiexciton configurations.
