  The following scenarios of Re-embedding into SiO2-host by pulsed
Re-implantation were derived and discussed after XPS-and-DFT electronic
structure qualification: (i) low Re-impurity concentration mode -> the
formation of combined substitutional and interstitial impurities with
Re2O7-like atomic and electronic structures in the vicinity of oxygen
vacancies; (ii) high Re-impurity concentration mode -> the fabrication of
interstitial Re-metal clusters with the accompanied formation of ReO2-like
atomic structures and (iii) an intermediate transient mode with Re-impurity
concentration increase, when the precursors of interstitial defect clusters are
appeared and growing in the host-matrix structure occur. An amplification
regime of Re-metal contribution majority to the final Valence Band structure
was found as one of the sequences of intermediate transient mode. It was shown
that most of the qualified and discussed modes were accompanied by the MRO
(middle range ordering) distortions in the initial oxygen subnetwork of the
a-SiO2 host-matrix because of the appeared mixed defect configurations.
