  We investigate the transport of electrons in disordered and pristine graphene
devices. Fano shot noise, a standard metric to assess the mechanism for
electronic transport in mesoscopic devices, has been shown to produce almost
the same magnitude ($\approx 1/3$) in ballistic and diffusive graphene devices
and is therefore of limited applicability. We consider a two-terminal geometry
where the graphene flake is contacted by narrow metallic leads. We propose that
the dependence of the conductance on the position of one of the leads, a
conductance profile, can give us insight into the charge flow, which can in
turn be used to analyze the transport mechanism. Moreover, we simulate scanning
probe microscopy (SPM) measurements for the same devices, which can visualize
the flow of charge inside the device, thus complementing the transport
calculations. From our simulations, we find that both the conductance profile
and SPM measurements are excellent tools to assess the transport mechanism
differentiating ballistic and diffusive graphene systems.
