  Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (dHvA)
quantum oscillations studies are reported on a high-quality CoSi single crystal
grown by the Czochralski method. Temperature-dependent resistivities indicate
the dominating electron-electron scattering. Magnetoresistance (MR) at 2 K
reaches 610% for I||[111] and B||[01-1], whereas it is 500% for I||[01-1] and
B||[111]. A negative slope in field-dependent Hall resistivity suggests
electrons are the majority carriers. The carrier concentration extracted from
Hall conductivity indicates no electron-hole compensation. In 3D CoSi, the
electron transport lifetime is found to be approximately in the same order as
quantum lifetime, whereas in 2D electron gas the long-range scattering drives
the transport life much larger than the quantum lifetime. From linear and Hall
SdH oscillations the effective masses and Dingle temperatures have been
calculated. The dHvA oscillation reveals three frequencies at 18 ($\gamma$),
558 ($\alpha$) and 663 T ($\beta$)), whereas, SdH oscillation results in only
two frequencies $\alpha$ and $\beta$. The $\gamma$ frequency observed in dHvA
oscillation is a tiny hole pocket at the $\Gamma$ point.
