  How to transfer MoS2 films from growth substrates onto target substrates is a
critical issue for its practical applications. However, it remains a great
challenge to avoid the sample degradation and substrate destruction, since
current transfer method inevitably employs a wet chemical etching process.
Herein, we develop an etching-free transfer method for transferring wafer-scale
MoS2 films onto arbitrary substrates by using ultrasonication. Briefly, the
collapse of ultrasonication-generated microbubbles at the interface between
polymer-coated MoS2 film and substrates induce sufficient force to delaminate
the MoS2 films. Using this method the MoS2 films can be transferred from all
the substrates (silica, mica, strontium titanate, sapphire) and remains the
original sample morphology and quality. This method guarantees a simple
transfer process, allows the reuse of growth substrates, without the presence
of any hazardous etchants. The etching-free transfer method may promote the
broad applications of MoS2 in electronics, optoelectronics and catalysis.
