  We report the fabrication of nanostructures from the quasi-two-dimensional
electron gas (q2DEG) formed at the LaAlO$_{3}$/ SrTiO$_{3}$ (LAO/STO)
interface. The process uses electron beam lithography in combination with
reactive ion etching. This technique allows to pattern high-quality structures
down to lateral dimensions as small as $100$nm while maintaining the conducting
properties without inducing conductivity in the STO substrate. Temperature
dependent transport properties of patterned Hall bars of various widths show
only a small size dependence of conductivity at low temperature as well as at
room temperature. The deviation can be explained by a narrow lateral depletion
region. All steps of the patterning process are fully industry compatible.
