  Quantum conductance calculations on the mechanically deformed monolayers of
MoS$_2$ and WS$_2$ were performed using the non-equlibrium Green's functions
method combined with the Landauer-B\"{u}ttiker approach for ballistic transport
together with the density-functional based tight binding (DFTB) method. Tensile
strain and compression causes significant changes in the electronic structure
of TMD single layers and eventually the transition semiconductor-metal occurs
for elongations as large as ~11% for the 2D-isotropic deformations in the
hexagonal structure. This transition enhances the electron transport in
otherwise semiconducting materials.
