  We report on the existence of water-gated charge doping of graphene deposited
on atomically flat mica substrates. Molecular films of water in units of ~0.4
nm-thick bilayers were found to be present in regions of the interface of
graphene/mica hetero-stacks prepared by micromechanical exfoliation of kish
graphite. The spectral variation of the G and 2D bands, as visualized by Raman
mapping, shows that mica substrates induce strong p-type doping in graphene,
with hole densities of $(9 \pm 2) \times 1012 cm${-2}$. The ultrathin water
films, however, effectively block interfacial charge transfer, rendering
graphene significantly less hole-doped. Scanning Kelvin probe microscopy
independently confirmed a water-gated modulation of the Fermi level by 0.35 eV,
in agreement with the optically determined hole density. The manipulation of
the electronic properties of graphene demonstrated in this study should serve
as a useful tool in realizing future graphene applications.
