  Berry curvature hot spots in two-dimensional materials with broken inversion
symmetry are responsible for the existence of transverse valley currents, which
give rise to giant nonlocal dc voltages. Recent experiments in high-quality
gapped graphene have highlighted a saturation of the nonlocal resistance as a
function of the longitudinal charge resistivity $\rho_{{\rm c}, xx}$, when the
system is driven deep into the insulating phase. The origin of this saturation
is, to date, unclear. In this work we show that this behavior is fully
compatible with bulk topological transport in the regime of large valley Hall
angles (VHAs). We demonstrate that, for a fixed value of the valley diffusion
length, the dependence of the nonlocal resistance on $\rho_{{\rm c}, xx}$
weakens for increasing VHAs, transitioning from the standard $\rho^3_{{\rm c},
xx}$ power-law to a result that is independent of $\rho_{{\rm c}, xx}$.
