  Monte Carlo simulations are performed to study the in-plane transport of
spin-polarized electrons in III-V semiconductor quantum wells. The density
matrix description of the spin polarization is incorporated in the simulation
algorithm. The spin-orbit interaction terms generate coherent evolution of the
electron spin polarization and also cause dephasing. The spatial motion of the
electrons is treated semiclassically. Three different scattering
mechanisms--optical phonons, acoustic phonons and ionized impurities--are
considered. The electric field is calculated self-consistently from the charge
distribution. The Monte Carlo scheme is described, and simulation results are
reported for temperatures in the range 77-300 K.
