  Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001)
and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp
streaks in reflection high-energy electron diffraction and triangular
structures in scanning tunneling microscopy indicate a flat smooth film growth
along the c-axis, and is very similar to that from a hexagonal surface. X-ray
diffraction pattern confirms the growth along the c-axis with c-axis lattice
constant of 17.39 {\AA}. The grown film is semiconducting, having a small band
gap of about 0.034 eV, as calculated from the temperature dependent
resistivity. Antiferromagnetic nature of the film with a N\'eel temperature of
about 40 K is estimated from the magnetic exchange bias measurements. A larger
out-of-plane exchange bias, along with a smaller in-plane exchange bias is
observed below 40 K. Exchange bias training effects are analyzed based on
different models and are observed to be following a modified power-law decay
behavior.
