  Charge carrier recombination in the perovskite solar cells (PSCs) has a deep
influence on the electrical performance, such as open circuit voltage, short
circuit current, fill factor and ultimately power conversion efficiency. The
impacts of injection barrier, recombination channels, doping properties of
carrier transport layers and light intensity on the performance of PSCs are
theoretically investigated by drift-diffusion model in this work. The results
indicate that due to the injection barrier at the interfaces of perovskite and
carrier transport layer, the accumulated carriers modify the electric field
distribution throughout the PSCs. Thus, a zero electric field is generated at a
specific applied voltage, with greatly increases the interfacial recombination,
resulting in a local kink of current density-voltage (J-V) curve. This work
provides an effective strategy to improve the efficiency of PSCs by pertinently
reducing both the injection barrier and interfacial recombination.
