  We present a computational study on the impact of line defects on the
electronic properties of monolayer MoS2. Four different kinds of line defects
with Mo and S as the bridging atoms, consistent with recent theoretical and
experimental observations are considered herein. We employ the density
functional tight-binding (DFTB) method with a Slater-Koster type DFTB-CP2K
basis set for evaluating the material properties of perfect and the various
defective MoS2 sheets. The transmission spectra is computed with a
DFTB-Non-Equilibrium Greens Function (NEGF) formalism. We also perform a
detailed analysis of the carrier transmission pathways under a small bias and
investigate the phase shifts in the transmission eigenstates of the defective
MoS2 sheets. Our simulations show a 2-4 folds decrease in carrier conductance
of MoS2 sheets in the presence of line defects as compared to that for the
perfect sheet.
