  In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al
concentration were prepared by sol-gel method on glass substrates. The
deposited films were annealed at different temperatures of 300, 350, 400, 450
and 500 {\deg}C for 1 h in air. X-ray diffraction (XRD) showed wurtzite
crystalline structure for the films annealed above 400 {\deg}C. The films were
subsequently irradiated by beams of excimer (KrF, {\lambda}=248 nm) laser. The
evolution of crystal structure, surface morphology and optical properties were
studied using XRD, filed emission scanning electron microscope (FE-SEM) and
UV-Vis spectrophotometer, respectively. Real-time measurement of electrical
conductivity during laser irradiation showed a transient or persistent
photoconductivity effect. The effect of laser energy on this photoconductivity
was also investigated. Based on the observed photoluminescence (PL) and X-ray
photoelectron spectroscopy (XPS), the observed photoconductivity effect was
described.
