  We present transport measurements on high-mobility bilayer graphene fully
encapsulated in hexagonal boron nitride. We show two terminal quantum Hall
effect measurements which exhibit full symmetry broken Landau levels at low
magnetic fields. From weak localization measurements, we extract gate-tunable
phase coherence times $\tau_{\phi}$ as well as the inter- and intra-valley
scattering times $\tau_i$ and $\tau_*$. While $\tau_{\phi}$ is in qualitative
agreement with an electron-electron interaction mediated dephasing mechanism,
electron spin-flip scattering processes are limiting $\tau_{\phi}$ at low
temperatures. The analysis of $\tau_i$ and $\tau_*$ points to local strain
fluctuation as the most probable mechanism for limiting the mobility in
high-quality bilayer graphene.
