  A comprehensive current-voltage (I-V) characterization is performed for three
different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID)
\{beta}-(Al0.19Ga0.81)2O3 grown by molecular beam epitaxy (MBE) on
\{beta}-Ga2O3 for temperatures ranging between 25C -300C. Reciprocal space
mapping shows the (Al0.19Ga0.81)2O3 films are strained and lattice matched to
the substrate. Schottky Barrier Height (SBH), ideality factor (n), and series
resistance (Rs) are extracted from the I-V characteristics for the three types
of metals and temperatures. Room temperature capacitance-voltage (C-V)
measurements revealed fully depleted \{beta}-(Al0.19Ga0.81)2O3 layer. Extracted
room temperature SBHs after zero field correction for Pt, Ni and Ti were 2.39
eV, 2.21 eV, and 1.22 eV respectively. Variation of SBHs with metal clearly
indicates the dependence on work function.
