  In this work, we have studied the crystal defectiveness and doping activation
subsequent to ion implantation and post-annealing by using various techniques
including photoluminescence (PL), Raman spectroscopy and transmission electron
microscopy (TEM). The aim of this work was to test the effectiveness of double
step annealing to reduce the density of point defects generated during the
annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work
evidences that neither the first, 1 hour isochronal annealing at 1650 - 1700 -
1750 {\deg}C, nor the second one, at 1500 {\deg}C for times between 4 hour and
14 hour, were able to recover a satisfactory crystallinity of the sample and
achieve dopant activations exceeding 1%.
