  We presents a data-calibrated compact model of carbon nanotube (CNT)
field-effect transistors (CNFETs) based on the virtual-source (VS) approach,
describing the intrinsic current-voltage and charge-voltage characteristics.
The features of the model include: (i) carrier VS velocity extracted from
experimental devices with gate lengths down to 15 nm; (ii) carrier effective
mobility and velocity depending on the CNT diameter; (iii) short channel effect
such as inverse subthreshold slope degradation and drain-induced barrier
lowering depending on the device dimensions; (iv) small-signal capacitances
including the CNT quantum capacitance effect to account for the decreasing gate
capacitance at high gate bias. The CNFET model captures dimensional scaling
effects and is suitable for technology benchmarking and performance projection
at the sub-10-nm technology nodes.
