  An energy-efficient voltage controlled domain wall device for implementing an
artificial neuron and synapse is analyzed using micromagnetic modeling in the
presence of room temperature thermal noise. By controlling the domain wall
motion utilizing spin transfer or spin orbit torques in association with
voltage generated strain control of perpendicular magnetic anisotropy in the
presence of Dzyaloshinskii-Moriya interaction, different positions of the
domain wall are realized in the free layer of a magnetic tunnel junction to
program different synaptic weights. The feasibility of scaling of such devices
is assessed in the presence of thermal perturbations that compromise
controllability. Additionally, an artificial neuron can be realized by
combining this DW device with a CMOS buffer. This provides a possible pathway
to realize energy efficient voltage controlled nanomagnetic deep neural
networks that can learn in real time.
