  Theory of the remote Coulomb impurity scattering in single--wall carbon
nanotubes is developed within one--electron approximation. Boltzmann equation
is solved within drift--diffusion model to obtain the tube conductivity. The
conductivity depends on the type of the nanotube bandstructure (metal or
semiconductor) and on the electron Fermi level. We found exponential dependence
of the conductivity on the Fermi energy due to the Coulomb scattering rate has
a strong dependence on the momentum transfer. We calculate intra-- and
inter--subband scattering rates and present general expressions for the
conductivity. Numerical results, as well as obtained analytical expressions,
show that the degenerately doped semiconductor tubes may have very high
mobility unless the doping level becomes too high and the inter--subband
transitions impede the electron transport.
