  We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix,
which are overgrown by a thin GaSb capping layer with variable thickness.
Quantum dot samples are studied by temperature-dependent photoluminescence, and
we observe that the quantum dot emission shows anomalous temperature
dependence,~i.e., increase of energy with temperature increase from 10~K to
$\sim$70~K, followed by energy decrease for larger temperatures. With the help
of fitting of luminescence spectra by Gaussian bands with energies extracted
from eight band ${\bf k}\cdot{\bf p}$ theory with multiparticle corrections
calculated using the configuration interaction method, we explain the anomalous
temperature dependence as mixing of momentum direct and indirect exciton
states. We also find that the ${\bf k}$-indirect electron-hole transition in
type-I regime at temperatures $<70$~K is optically more intense than ${\bf
k}$-direct. Furthermore, we identify a band alignment change from type-I to
type-II for QDs overgrown by more than one monolayer of GaSb. Finally, we
predict the retention time of (In,Ga)(As,Sb)/GaAs/AlP/GaP quantum dots capped
with GaSb layers with varying thickness, for usage as storage units in the
QD-Flash nanomemory concept and observe that by using only a 2~ML-thick GaSb
capping layer, the projected storage time surpasses the non-volatility limit of
10 years.
