  We study spin polarized transport in silicon germanium nanowires using a
semiclassical monte carlo approach. Spin depolarization in the channel is
caused due to D'yakonov-Perel (DP) relaxation associated with Rashba spin orbit
coupling and due to Elliott- Yafet (EY) relaxation. We investigate the
dependence of spin dephasing on germanium mole fraction in silicon germanium
nanowires. The spin dephasing lengths decrease with an increase in the
germanium mole fraction. We also find that the temperature has a strong
influence on the dephasing rate and spin relaxation lengths increase with
decrease in temperature. The ensemble averaged spin components and the steady
state distribution of spin components vary with initial polarization.
