  An experimental setup that directly reproduces Extreme UV-lithography
relevant conditions for detailed component exposure tests is described. The EUV
setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris
mitigation system; collection and filtering optics; and an UHV experimental
chamber, equipped with optical and plasma diagnostics. The first results,
identifying the physical parameters and evolution of EUV-induced plasmas are
presented. Finally, the applicability and accuracy of the in situ diagnostics
is briefly discussed.
