  Al/ maleic anhydride (MA) /p-Si organic Schottky devices were fabricated on a
p-Si semiconductor wafer by spin coating. The frequency and voltage dependent
dielectric constant of Al/MA/p-Si have been investigated. Dielectric properties
and electrical conductivity of contact structures have been investigated in
detail by using spectroscopic technique in a wide range of frequencies and
applied bias voltages at room temperature. The values of dielectric constant,
dielectric loss, dielectric loss tangent, real and imaginary parts of the
electrical modulus and ac electrical conductivity were found considerably
sensitive to frequency and applied bias voltage especially in depletion and
accumulation regions. Experimental results indicate that the values of
dielectric constant show a steep decrease with increasing frequency for each
voltage. The values of dielectric loss as a function of voltage show a jump,
and dielectric loss decreases with decreasing voltage and increasing frequency.
The weak increasing of the ac electrical conductivity on frequency is observed.
The real part of electric modulus increases with increasing frequency. Also,
the imaginary part of electric modulus shows a peak and the peak position
shifts to higher frequency with increasing applied voltage. It can be concluded
that the interfacial polarization can be more easily occurred at low
frequencies and the majority of interface states at metal semiconductor
interface contributes to deviation of dielectric properties of Al/MA/p-Si
structures.
