  The (001) surfaces of cubic SiC were investigated with ab-initio molecular
dynamics simulations. We show that C-terminated surfaces can have different
c(2x2) and p(2x1) reconstructions, depending on preparation conditions and
thermal treatment, and we suggest experimental probes to identify the various
reconstructed geometries. Furthermore we show that Si-terminated surfaces
exhibit a p(2x1) reconstruction at T=0, whereas above room temperature they
oscillate between a dimer row and an ideal geometry below 500 K, and sample
several patterns including a c(4x2) above 500 K.
