  In this work we propose the application of a radiation damage model based on
the introduction of deep level traps/recombination centers suitable for device
level numerical simulation of radiation detectors at very high fluences (e.g.
1{\div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a
surface damage model developed by using experimental parameters extracted from
measurements from gamma irradiated p-type dedicated test structures.
