  The dependence of random telegraph noise (RTN) amplitude on the gate
overdrive in a junctionless field-effect transistor (FinFET) with rectangular
and trapezoidal channel (fin) cross sections manufactured using
silicon-on-insulator technology has been numerically simulated. It is
established that the RTN amplitude in the subthreshold region of gate voltages
for a FinFET with a trapezoidal cross-section of the channel is significantly
lower than that for the transistor with a rectangular cross-section of a
channel. In addition, under the same conditions, the RTN amplitude at the
threshold gate voltage in a junctionless FinFET is significantly lower than
that in planar fully depleted and in usual FinFET.
