  Spin selective nature of spin-filter tunnel junctions can be integrated with
conventional metallic ferromagnets to regulate spin polarized quasiparticles in
superconducting devices. We report fabrication of pseudo spin-valve device made
with a bilayer of nitride spin-filter tunnel barrier (DyN or GdN) and a
transition metal ferromagnet (Co and Gd). We show resistance switching in these
devices corresponding to parallel and antiparallel configuration of their
mutual magnetization direction. With optimal deposition process partial
nitridation of the Co layer can be achieved. The magnetically dead native
CoN$_x$ layer at the Co-DyN interface acts the role of the barrier in these
devices. In pseudo spin-valve with Co, lower resistance was found for
antiparallel state compared to parallel configuration. Reverse resistance
switching behavior was observed for the pseudo spin-valves with Gd. Presence of
resistance switching in these devices further confirm the spin-filtering nature
of DyN and GdN tunnel barrier. Quasiparticle transport at different
temperatures in these devices was found to be compatible with conventional
N-I-S tunnelling model. These devices can be further engineered to regulate
spin polarized supercurrent in superconducting spintronics devices.
