  We report results of systematic measurements of charge transport properties
of the 20.5nm wide HgTe-based quantum well in perpendicular magnetic field,
performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure
transport is well described by the two-band semiclassical model.In contrast, at
elevated pressure, we observed non-monotonic pressure dependence of resistivity
at CNP. For pressures lower than $\approx9$ kbar, resistivity grows with
pressure, in accord with expectations from the band structure calculations and
the model incorporating effects of disorder on transport in 2D semimetals with
indirect band overlap. For higher pressures, the resistivity saturates and
starts decreasing upon further increase of pressure. Above $\approx14$ kbar the
resistance and hopping transport character sharply change, which may indicate
formation of the excitonic insulator state. The data also reveals strong
influence of disorder on transport in 2D electron-hole system with a small band
overlap.
