  We find that temperature dependent screening can quantitatively explain the
metallic behaviour of the resistivity on the metallic side of the so-called
metal-insulator transition in p-SiGe. Interference and interaction effects
exhibit the usual insulating behaviour which is expected to overpower the
metallic background at sufficiently low temperatures. We find empirically that
the concept of a Fermi-liquid describes our data in spite of the large r_s = 8.
