  We report a quantum study of the carrier scattering induced by graphene
ripples. Crucial differences between the scattering induced by the ripple and
ordinary scattering were found. In contrast to the latter, in which the Born
approximation is valid for high-energy process, the former is valid for the
low-energy process with a quite broad energy range. Furthermore, in polar
symmetry ripples, the scattering amplitude exhibits a pseudo-spin structure, an
additional factor $\cos\theta/2$, which leads to an absence of backward
scattering. We also elucidate that the scattering cross sections are
proportional to the energy cubed of the incident carrier.
