  The novel technique based on air-gap transistor stamps enabled realization of
the intrinsic (not dominated by static disorder) transport of the
electric-field-induced charge carriers on the surface of rubrene crystals over
a wide temperature range. The signatures of the intrinsic transport are the
anisotropy of the carrier mobility, mu, and the growth of mu with cooling. The
anisotropy of mu vanishes in the activation regime at lower temperatures, where
the charge transport becomes dominated by shallow traps. The deep traps,
deliberately introduced into the crystal by X-ray radiation, increase the
field-effect threshold without affecting the mobility. These traps filled above
the field-effect threshold do not scatter the mobile polaronic carriers.
