  The electric-field-modulated resistance switching in VO2 thin films grown on
piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has
been investigated. Large relative change in resistance (10.7%) was observed in
VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a
given polarization direction, stable resistive states of VO2 films can be
realized even when the applied electric fields are removed from the
heterostructures. By sweeping electric fields across the heterostructure
appropriately, multiple resistive states can be achieved. These stable
resistive states result from the different stable remnant strain states of
substrate, which is related to the rearrangements of ferroelectric domain
structures in PMN-PT(111) substrate. The resistance switching tuned by electric
field in our work may have potential applications for novel electronic devices.
