  The formation of atomic wires via pseudomorphic step-edge decoration on
vicinal silicon surfaces has been analyzed for Ga on the Si(112) surface using
Scanning Tunneling Microscopy and Density Functional Theory calculations. Based
on a chemical potential analysis involving more than thirty candidate
structures and considering various fabrication procedures, it is concluded that
pseudomorphic growth on stepped Si(112), both under equilibrium and
non-equilibrium conditions, must favor formation of Ga zig-zag chains rather
than linear atom chains. The surface is non-metallic and presents quasi-one
dimensional character in the lowest conduction band.
