  The article consists of four sections all dealing with the computational
modeling of the sputtering process. The first section deals with the difference
in Bismuth atomic layer deposition at different polar angle and ion flounce. In
the second section, atomic layer deposition was studied as a function of
incident Argon ion energy at different pressure conditions. A curve analogous
to Bragg curve was obtained .In the third section TiOx films was developed by
simulations. The sputtering parameters were varied to get different atomic
layers. The variation of coverage with sticking coefficient was shown. The last
section deals with sputter based deposition of TiN films. The rate of change of
partial sputtering yield with coverage was considered. The deposition pressure
and time were varied to get films of different thickness. All the sections are
stored separately
