  Color centers in silicon carbide have increasingly attracted attention in
recent years owing to their excellent properties such as single photon
emission, good photostability, and long spin coherence time even at room
temperature. As compared to diamond which is widely used for holding
Nitrogen-vacancy centers, SiC has the advantage in terms of large-scale,
high-quality and low cost growth, as well as advanced fabrication technique in
optoelectronics, leading to the prospects for large scale quantum engineering.
In this paper, we report experimental demonstration of the generation of
nanoscale $V_{Si}$ single defect array through ion implantation without the
need of annealing. $V_{Si}$ defects are generated in pre-determined locations
with resolution of tens of nanometers. This can help in integrating $V_{Si}$
defects with the photonic structures which, in turn, can improve the emission
and collection efficiency of $V_{Si}$ defects when it is used in spin photonic
quantum network. On the other hand, the defects are shallow and they are
generated $\sim 40nm$ below the surface which can serve as critical resources
in quantum sensing application.
