  A modified cathodic arc technique has been used to deposit carbon nitride
thin films directly on n+ Si substrates. Transmission Electron Microscopy
showed that clusters of fullerene-like nanoparticles are embedded in the
deposited material. Field emission in vacuum from as-grown films starts at an
electric field strength of 3.8 V/micron. When the films were etched in an
HF:NH4F solution for ten minutes, the threshold field decreased to 2.6
V/micron. The role of the carbon nanoparticles in the field emission process
and the influence of the chemical etching treatment are discussed.
