  Flexible and efficient manipulation of magnetic configurations can be
challenging. In the design of practical devices, achieving a high effective
magnetic field with a low working current is under tight demand. Here, we
report a unique method for efficient magnetism modulation by direct current
injection in magnetic Weyl semimetal Co3Sn2S2. We demonstrate that the
modulation process stems from current-assisted domain wall motion. Through two
independent methods, we reveal that the spin-transfer torque efficiency of
Co3Sn2S2 reaches as high as 2.4-5.6 kOe MA^(-1) cm^2, and the threshold current
density for driving the magnetic domain walls is as low as <5.1*10^5 A/cm^2
without an external field, and <1.5*10^5 A/cm^2 with a moderate external field.
Our findings manifest a new and powerful approach for sub-micron magnetism
manipulation, and also open the door towards a new paradigm of spintronics that
combines magnetism, topology, and metallicity for low-energy consumption memory
and computing.
