  The hydrogenated $\rm{Sb}$ monolayer epitaxially grown on a $\rm{LaFeO_3}$
substrate is a novel type of two-dimensional material hosting quantum
spin-quantum anomalous Hall (QS-QAH) states. For a device formed by $\rm{Sb}$
monolayer ribbon, the QAH edge states, belong to a single valley, are located
at opposite edges of the ribbon. The QSH edge states, on the other hand, belong
to the other valley and are distributed in a very narrow region at the same
edge. In this paper, we find such material can be used to fabricate perfect
valley filter. Adopting scattering matrix method and Green's function method,
the valley resolved transport and spatial distribution of local current are
calculated, in the present of Anderson disorder, edge defects and edge
deformations. The numerical results demonstrate that, in the presence of above
three types of disorder with moderate strength, the carriers can flow
disspationless with nearly perfect valley polarization. Moreover, when the
device becomes longer, the transport current does not decrease while the valley
filter works even better. The origin is that the disorder can destroy the QSH
edge states, but the valley-polarized QAH edge states can well hold.
