  We report observations of well developed half integer quantum Hall effect
(QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene
films are grown by chemical vapor deposition (CVD) on copper, then transferred
to SiO_{2} /Si substrates, with typical carrier mobilities \approx 4000 cm^{2}
/Vs. The large size graphene with excellent quality and electronic homogeneity
demonstrated in this work is promising for graphene-based quantum Hall
resistance standards, and can also facilitate a wide range of experiments on
quantum Hall physics of graphene and practical applications exploiting the
exceptional properties of graphene.
