  By fabricating and characterizing multi-layered MoS$_2$-based field-effect
transistors (FETs) in a four terminal configuration, we demonstrate that the
two terminal-configurations tend to underestimate the carrier mobility $\mu$
due to the Schottky barriers at the contacts. For a back-gated two-terminal
configuration we observe mobilities as high as 125 cm$^2$V$^{-1}$s$^{-1}$ which
is considerably smaller than 306.5 cm$^2$V$^{-1}$s$^{-1}$ as extracted from the
same device when using a four-terminal configuration. This indicates that the
intrinsic mobility of MoS$_2$ on SiO$_2$ is significantly larger than the
values previously reported, and provides a quantitative method to evaluate the
charge transport through the contacts.
