  Metal/semiconductor interfaces govern the operation of semiconductor devices
through the formation of charge injection barriers that can be controlled by
tuning the metal work function. However, the controlling ability is typically
limited to being static. We show that a dynamic nature can be imparted to the
interfaces using electrode surface modification with a structurally disordered
molecular monolayer. The barrier height at the interfaces is altered
significantly in a reversible way by an external electric field. As a result, a
dramatic change in the carrier transport properties through the interfaces is
observed, such as a reversible polarity reversion of
metal/organic-semiconductor/metal diodes.
