  A study on the optimization of ambient temperature growth and superconducting
properties of Ti-V alloy thin films grown on SiO2-coated Si substrate is
reported here. These films have been synthesized by co-sputtering of Ti and V
targets, and films having different Ti concentrations were deposited to get the
optimized critical temperature (TC) of thin films close to the bulk value. The
maximum TC of 5.2 K has been obtained in the Ti40V60 composition, which is
further increased to 6.2 K when a 10 nm thick Ti underlayer is added below the
Ti-V film. GIXRD measurements confirm the formation of Ti-V alloys in the
desired crystal structure. The upper critical field (HC2) of the thin films has
been estimated with the help of magnetotransport measurements. The utility of
Ti-V alloy thin films in superconducting radiation detection applications is
ascertained.
