  The ITS3 upgrade baseline design employs MAPS (Monolithic Active Pixel
Sensor) in bent state. Bending experiments with the existing ITS2 MAPS (=Alpide
chip) show it remains functional but with relative large analog supply current
changes. It is shown that by the piezoresistive effect, rotation of current
mirror FETs can be responsible which was confirmed after validating the layout.
Measured Gauge Factor has proper sign but is 3 times lower than typical values
derived from literature. The magnitude of the measured strain induced PMOS
V$_{th}$ shift is as expected but the sign differs for compressive strain with
some of the literature.
