  We present a first-principles study of semiconducting carbon nanotubes
adsorbed on the unpassivated Si(100) surface. We have found metallicity for the
combined system caused by n-doping of the silicon slab representing the surface
by the SWNT. We confirm this metallicity for nanotubes of different diameters
and chiral angles, and find the effect to be independent of the orientation of
the nanotubes on the surface. We also present adsorption energetics and
configurations which show semiconducting SWNTs farther apart from the surface
and transferring less charge, in comparison with metallic SWNTs of similar
diameter.
