  A detailed study of charge transport in the paramagnetic phase of
Ho0.8Lu0.2B12 strongly correlated antiferromagnet was carried out at
temperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain single
crystals with different orientation of normal vectors to the lateral surface of
Ho0.8Lu0.2B12 samples were investigated in order to establish the changes in
Hall effect due to the anisotropy, induced by (i) the electronic phase
separation (dynamic charge stripes) and (ii) formation of the disordered
cage-glass state below 60 K. It was demonstrated that in magnetic fields above
40 kOe directed along the 001 and 110 axes in fcc crystals a considerable
intrinsic anisotropic positive component Ranxy appears in addition to the
ordinary negative Hall resistivity contribution. The relation Ranxy prop. Ranxx
1.7 was found between anomalous components of the resistivity tensor for H
along 001 below 60 K, and the power law Ranxy prop. Ranxx 0.83 was detected for
the orientation H along 110 at temperatures T below TS about 15 K. It is argued
that below TS about 15 K the anomalous odd Ranxy(T) and even Ranxx(T) parts of
the resistivity tensor may be interpreted in terms of formation of a large size
clusters in the filamentary structure of fluctuating charges (stripes). We
assume that these Ranxy(001) and Ranxy(110) components represent the intrinsic
(Berry phase contribution) and extrinsic (skew scattering) mechanism,
respectively. An additional ferromagnetic contribution to anomalous Hall effect
(AHE) for both ordinary and anisotropic components in Hall signal was
registered and attributed to the effect of magnetic polarization of 5d states
(ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12.
