  We report magnetotransport measurements on magnetically doped
(Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices,
logarithmic dependence on temperature and bias voltage are obseved in both the
longitudinal and anomalous Hall resistance. The interplay of disorder and
electron-electron interactions is found to explain quantitatively the observed
logarithmic singularities and is a dominant scattering mechanism in these
samples. Submicron scale devices exhibit intriguing quantum oscillations at
high magnetic fields with dependence on bias voltage. The observed quantum
oscillations can be attributed to bulk and surface transport.
