  The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on
the annealing parameters - temperature and time - has been investigated. A
uniaxial magnetic anisotropy is evidenced, whose orientation with respect to
the crystallographic axes changes upon annealing from [-110] for the as-grown
samples to [110] for the annealed samples. Both cubic an uniaxial anisotropies
are tightly linked to the concentration of charge carriers, the magnitude of
which is controlled by the annealing process.
