  Acceptor and donor doping is a standard for tailoring semiconductors. More
recently, doping was adapted to optimize the behavior at ferroelectric domain
walls. In contrast to more than a century of research on semiconductors, the
impact of chemical substitutions on the local electronic response at domain
walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor
doped with Ti$^{4+}$. Density functional theory calculations show that
Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy
measurements confirm the robustness of the ferroelectric domain template. The
electronic transport at both macro- and nanoscopic length scales is
characterized. The measurements demonstrate the intrinsic nature of emergent
domain wall currents and point towards Poole-Frenkel conductance as the
dominant transport mechanism. Aside from the new insight into the electronic
properties of hexagonal manganites, B-site doping adds an additional degree of
freedom for tuning the domain wall functionality.
