  The extraordinary mechanical properties of 2D TMDCs make them ideal
candidates for investigating strain-induced control of various physical
properties. Here we explore the role of non-uniform strain in modulating
optical, electronic and transport properties of semiconducting, chemical vapour
deposited monolayer MoS2, on periodically nanostructured substrates. A
combination of spatially resolved spectroscopic and electronic properties
explore and quantify the differential strain distribution and carrier density
on a monolayer, as it conformally drapes over the periodic nanostructures. The
observed accumulation in electron density at the strained regions is supported
by theoretical calculations which form the likely basis for the ensuing 60x
increase in field effect mobility in strained samples. Though spatially
non-uniform, the pattern induced strain is shown to be readily controlled by
changing the periodicity of the nanostructures thus providing a robust yet
useful macroscopic control on strain and mobility in these systems.
