  We have observed the well-kown quantum Hall effect (QHE) in epitaxial
graphene grown on silicon carbide (SiC) by using, for the first time, only
commercial NdFeB permanent magnets at low temperature. The relatively large and
homogeneous magnetic field generated by the magnets, together with the high
quality of the epitaxial graphene films, enables the formation of
well-developed quantum Hall states at Landau level filling factors $\nu=\pm 2$,
commonly observed with superconducting electro-magnets. Furthermore, the
chirality of the QHE edge channels can be changed by a top gate. These results
demonstrate that basic QHE physics are experimentally accessible in graphene
for a fraction of the price of conventional setups using superconducting
magnets, which greatly increases the potential of the QHE in graphene for
research and applications.
