  Large scale, homogeneous quasi-free standing monolayer graphene is obtained
on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an
appealing and cost effective platform for graphene growth. The quasi-free
monolayer is produced by intercalation of hydrogen under the interfacial,
(6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle
resolved photoemission spectroscopy (ARPES) reveals sharp linear pi-bands. The
decoupling of graphene from the substrate is identified by X-ray photoemission
spectroscopy (XPS) and low energy electron diffraction (LEED). Atomic force
microscopy (AFM) and low energy electron microscopy (LEEM) demonstrate that
homogeneous monolayer domains extend over areas of hundreds of
square-micrometers.
