  By combining temperature-dependent resistivity and Hall effect measurements,
we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using
metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect
measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K
revealing two-band conduction. Further analyses revealed carrier freeze-out
characteristics in both bands yielding donor state energies of ~ 33.7 and ~
45.6 meV. The former is consistent with the donor energy of Si in \b{eta}-Ga2O3
whereas the latter suggests a residual donor state, likely associated with a DX
center. This study provides a critical insight into the impurity band
conduction and the defect energy states in \b{eta}-Ga2O3 using high-field
magnetotransport measurements.
