  A recent work by Zhao et al. [1] reports the realization of a synthetic Kondo
lattice in a gate-tunable Moir\'e TMD bilayer system. The observation of a
Kondo lattice is supported by a plateau (or dip, depending on filling) in the
temperature dependence of the resistivity $\rho(T)$ around $T^*\sim 40~$K,
which is interpreted as the Kondo temperature scale, and an apparent
enhancement of carrier mass extracted from the low-temperature resistivity
data, indicating the emergence of `heavy fermions'. The latter observation is
crucially based on the assumption that the primary resistive scattering
mechanism is Umklapp electron-electron scattering in the underlying Fermi
liquid. In this work, we analyze the experimental data under the assumption
that the primary resistive scattering mechanism is not electron-electron
scattering, but Coulomb scattering by random quenched charged impurities and
phonon scattering. We show that a combination of impurity and phonon scattering
is a plausible alternative explanation for the observed resistivity that can
describe the key features of the experimental data, even if no Kondo lattice
has formed, indicating that further theoretical and experimental work is needed
to conclusively verify the formation of a Kondo lattice in Ref. [1].
  [1] W. Zhao, B. Shen, Z. Tao, Z. Han, K. Kang, K. Watanabe, T. Taniguchi, K.
F. Mak, and J. Shan, arXiv:2211.00263 (2022).
