  Reverse and stable bipolar resistive switching effect was observed in planar
NdCeCuO - NdCeO - Ag heterostructures. It was shown that the current voltage
charactereriscs of the BRSE observed has a diode character. Simulations were
used to consider the influence of the nonuniform distribution of an electric
field at the interface of a heterojunction on the effect of bipolar resistive
switching in investigated structures. The inhomogeneous distribution of the
electric field near the contact edge creates regions of higher electric field
strength which, in turn, stimulates motion and redistribution of defects,
changes of the resistive properties of the whole structure and formation of a
percolation channel.
