  We study single electron transport across a single Bi dopant in a Silicon
Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear
spin $I=9/2$ affects the transport characteristics of the device. In the
sequential tunneling regime we find that at, temperatures in the range of $100
mK$, $dI/dV$ curves reflect the zero field hyperfine splitting as well as its
evolution under an applied magnetic field. Our non-equilibrium quantum
simulations show that nuclear spins can be partially polarized parallel or
antiparallel to the electronic spin just tuning the applied bias.
