  We show the emergence of fractional quantum Hall states in dry-transferred
chemical vapor deposition (CVD) derived graphene assembled into
heterostructures for magnetic fields from below 3 T to 35 T. Effective
composite-fermion filling factors up to $\nu^* = 4$ are visible and higher
order composite-fermion states (with four flux quanta attached) start to emerge
at the highest fields. Our results show that the quantum mobility of CVD-grown
graphene is comparable to that of exfoliated graphene and, more specifically,
that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K,
well comparable to those observed in other silicon-gated devices based on
exfoliated graphene.
