  The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a
result of a phase transition from nearly commensurate to incommensurate charge
density wave states. Threshold switching, persistent above room temperature,
can be utilized in a variety of electronic devices, e.g., voltage controlled
oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2
at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2%
after irradiation, with persistent self-sustained oscillations observed through
the full irradiation sequence. The radiation hardness is attributed to the high
intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to
threshold switching. These results suggest that charge density wave devices,
implemented with thin films of 1T-TaS2, are promising for applications in high
radiation environments.
