  Photovoltaic (PV) response of epitaxial BiFe0.95Mn0.05O3 thin film grown by
pulsed laser deposition has been investigated on a broad range of temperature.
Wavelength dependent photovoltaic effect shows the contribution of in gap level
states most likely connected to the manganese doping on the B-site of the
perovskite unit cells and presence of defects (Bi and O vacancies). The
temperature dependent response of the PV response rules out electromigration
and/or Schottky barriers as dominant mechanisms. This is corroborated with the
observed switchable photovoltaic effect that can be explained either by the
depolarizing field or bulk photovoltaic effect. In addition the PV response
shows strong correlation with the low temperature polaronic like conduction
mechanism and high open circuit voltage (2.5V) is detected in the investigated
vertical capacitive geometry.
