  Capacitance measurements have been made on silicon pixel sensors of types n+
on n, p+ on n, and n+ on p. The arrays test a variety of implant and gap
widths, and the n+ on n devices test several p-stop designs. The measurements
examine inter-pixel and backplane contributions and include studies of
temperature dependence. Measurements were made before and after irradiation
with fluences relevant to LHC experiments and Fermilab Tevatron Run 2.
