  The effect of domain walls on electron transport has been investigated in
microfabricated Fe wires (0.65 to 20 $\mu m$ linewidths) with controlled stripe
domains. Magnetoresistance (MR) measurements as a function of domain wall
density, temperature and the angle of the applied field are used to determine
the low field MR contributions due to conventional sources in ferromagnetic
materials and that due to the erasure of domain walls. A negative domain wall
contribution to the resistivity is found. This result is discussed in light of
a recent theoretical study of the effect of domain walls on quantum transport.
