  Classical molecular-dynamics simulations were carried out to study epitaxial
growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a
threshold annealing temperature above which we observe formation of graphitic
structure on the substrate. To check the sensitivity of the simulation results,
we tested two empirical potentials and evaluated their reliability by the
calculated characteristics of graphene, its carbon-carbon bond-length, pair
correlation function, and binding energy.
