  We consider a two dimensional semiconductor with a local attraction among the
carriers. We study the ground state of this system as a function of the
semiconductor gap. We find a direct transition from a superconducting to an
insulating phase for no doping at a critical value, the single particle
excitations being always gapped. For finite doping we find a smooth crossover.
We calculate the critical temperature due to both the particle excitations and
the Berezinkii-Kosterlitz-Thouless transition.
