  We report about the optical and electrical characterization of three high
efficiency and blue sensitive Silicon photomultipliers from FBK, Hamamatsu, and
SensL. Key features of the tested devices when operated at 90% breakdown
probability are peak photon detection efficiencies between 40% and 55%,
temperature dependencies of gain and PDE that are less than 1%/$^{\circ}$C,
dark rates of $\sim$50\,kHz/mm$^{2}$ at room temperature, afterpulsing of about
2%, and direct optical crosstalk between 6% and 20%. The characteristics of all
three devices impressively demonstrate how the Silicon-photomultiplier
technology has improved over the past ten years. It is further demonstrated how
the voltage and temperature characteristics of a number of quantities can be
parameterized on the basis of physical models. The models provide a deeper
understanding of the device characteristics over a wide bias and temperature
range. They also serve as examples how producers could provide the
characteristics of their SiPMs to users. A standardized parameterization of
SiPMs would enable users to find the optimal SiPM for their application and the
operating point of SiPMs without having to perform measurements thus
significantly reducing design and development cycles.
