  The response to external terahertz (THz) irradiation from the silicon carbide
nanostructures prepared by the method of substitution of atoms on silicon is
investigated. The kinetic dependence of the longitudinal voltage is recorded at
room temperature by varying the drain-source current in the device structure
performed in a Hall geometry. In the frameworks of proposed model based on the
quantum Faraday effect the incident radiation results in the appearance of a
generated current in the edge channels with a change in the number of magnetic
flux quanta and in the appearance of features in the kinetic dependence of the
longitudinal voltage. The generation of intrinsic terahertz irradiation inside
the silicon carbide nanostructures is also revealed by the
electrically-detected electron paramagnetic resonance (EDEPR) measured the
longitudinal voltage as a function of the magnetic field value.
