  We have studied the effects of oxygen on hydrogenated amorphous/crystalline
silicon films in terms of their structural and optical properties. Different
hydrogenated silicon oxide (SiO:H) and silicon (Si:H) films are fabricated
between microcrystalline and amorphous transition region. X-ray diffraction,
Raman, FTIR and UV-Vis emission spectrometry have been used to characterize
different films. A comparison of the results with those of different types of
films like hydrogenated amorphous silicon oxide (a-SiO:H), hydrogenated
amorphous silicon (a-Si:H) and microcrystalline silicon ($\mu$c-Si:H) films
reveal their superiority as an excellent substance for solar cell. X-ray
diffraction, FTIR and Raman spectral analysis show that difference of the H
dilution effect has a major effect on the structure of the film and the optical
properties. Photoluminescence analysis of amorphous silicon-oxygen and
silicon-hydride alloy films has established their efficient application
appropriate as Si based light emitting devices. A large optical band gap of
1.83 eV and appearance of strong photo luminescence at 2.0 eV validates the
applicability of a-SiO:H film as a better alternative for the solar cells.
