  A new tool providing material contrast control in scanning electron
microscopy (SEM) is demonstrated. The approach is based on deep-UV illumination
during SEM imaging and delivers a novel material based contrast as well as
higher resolution due to the photoelectric effect. Electrons liberated from
illuminated sample surface contribute to the imaging which can be carried out
at a faster acquisition rate, provide material selective contrast, reduce
distortions caused by surface charging, and can substitute metal coating in
SEM. These features provide high fidelity SEM imaging and are expected to
significantly improve the performance of electron beam instruments as well as
to open new opportunities for imaging and characterization of materials at the
nanoscale.
