  Nanoscale chiral skyrmions in noncentrosymmetric helimagnets are promising
binary state variables in high-density, low-energy nonvolatile memory.
Skyrmions are ubiquitous as an ordered, single-domain lattice phase, which
makes it difficult to write information unless they are spatially broken up
into smaller units, each representing a bit. Thus, the formation and
manipulation of skyrmion lattice domains is a prerequisite for memory
applications. Here, using an imaging technique based on resonant magnetic x-ray
diffraction, we demonstrate the mapping and manipulation of skyrmion lattice
domains in Cu2OSeO3. The material is particularly interesting for applications
owing to its insulating nature, allowing for electric field-driven domain
manipulation.
