  Heterostructures involving two-dimensional (2D) transition metal
dichalcogenides and other materials such as graphene have a strong potential to
be the fundamental building block of many electronic and opto-electronic
applications. The integration and scalable fabrication of such heterostructures
is of essence in unleashing the potential of these materials in new
technologies. For the first time, we demonstrate the growth of few-layer MoS2
films on graphene via non-aqueous electrodeposition. Through methods such as
scanning and transmission electron microscopy, atomic force microscopy, Raman
spectroscopy, energy and wavelength dispersive X-ray spectroscopies and X-ray
photoelectron spectroscopy, we show that this deposition method can produce
large-area MoS2 films with high quality and uniformity over graphene. We reveal
the potential of these heterostructures by measuring the photo-induced current
through the film. These results pave the way towards developing the
electrodeposition method for the large-scale growth of heterostructures
consisting of varying 2D materials for many applications.
