  Room-temperature ferromagnetism is observed in (110) oriented ZnO films
containing 5 at % of Sc, Ti, V, Fe, Co or Ni, but not Cr, Mn or Cu ions. There
are large moments, 1.9 and 0.5 muB/atom for Co- and Ti-substituted oxides,
respectively. Sc-substituted ZnO shows also a moment of 0.3 muB/Sc.
Magnetization is very anisotropic, with variations of up to a factor three
depending on the orientation of the applied field relative to the R-cut
sapphire substrates. Results are interpreted in terms of a spin-split donor
impurity band model, which can account for ferromagnetism in insulating or
conducting high-k oxides with concentrations of magnetic ions that lie far
below the percolation threshold. The variation of the ferromagnetism with
oxygen pressure used during film growth is evidence of a link between
ferromagnetism and defect concentration.
