  In this report, we demonstrate that Ge-NWQD (nanowire quantum dots) at low
temperatures exhibit apparent Coulomb oscillations than that in Si-NWQD. These
oscillations gradually disappear as the temperature increases, indicating the
influence of phonon scattering. The increase in Coulomb oscillations enables
the device to exhibit multi-level characteristics at low voltage in quantum
flash, and the lower barrier high and high mobility of Ge make it advantageous
for increasing the storage capacity of quantum flash devices. This research
provides design guidelines for optimization of high-performance quantum flash
devices.
