  The behavior of spin diffusion in doped semiconductors is shown to be
qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet
in an intrinsic semiconductor must be a multiple-band disturbance, involving
inhomogeneous distributions of both electrons and holes, in a doped
semiconductor a single-band disturbance is possible. For n-doped nonmagnetic
semiconductors the enhancement of diffusion due to a degenerate electron sea in
the conduction band is much larger for these single-band spin packets than for
charge packets, and can exceed an order of magnitude at low temperatures even
for equilibrium dopings as small as 10^16 cm^-3. In n-doped ferromagnetic and
semimagnetic semiconductors the motion of spin packets polarized antiparallel
to the equilibrium carrier spin polarization is predicted to be an order of
magnitude faster than for parallel polarized spin packets. These results are
reversed for p-doped semiconductors.
