  Within the framework of the microscopic model of tunneling, we modelled the
behavior of the Josephson junction shunted by the
Superconductor-Insulator-Normal metal (SIN) tunnel junction. We found that the
electromagnetic impedance of the SIN junction yields both the
frequency-dependent damping and dynamic reactance which leads to an increase in
the effective capacitance of the circuit. We calculated the dc I-V curves and
transient characteristics of these circuits and explained their quantitative
differences to the curves obtained within the resistively shunted junction
model. The correct operation of the basic single-flux-quanta circuits with such
SIN-shunted junctions, i.e. the Josephson transmission line and the toggle
flip-flop, have also been modelled.
