  Memtranstor that correlates charge and magnetic flux via nonlinear
magnetoelectric effects has a great potential in developing next-generation
nonvolatile devices. In addition to multi-level nonvolatile memory, we
demonstrate here that nonvolatile logic gates such as NOR and NAND can be
implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure.
After applying two sequent voltage pulses (X1, X2) as the logic inputs on the
memtranstor, the output magnetoelectric voltage can be positive high (logic
"1"), positive low (logic "0"), or negative (logic "0"), depending on the
levels of X1 and X2. The underlying physical mechanism is related to the
complete or partial reversal of ferroelectric polarization controlled by
inputting selective voltage pulses, which determines the magnitude and sign of
the magnetoelectric voltage coefficient. The combined functions of both memory
and logic could enable the memtranstor as a promising candidate for future
computing systems beyond von Neumann architecture.
