  A simple physical model for calculation of the ion-induced soft error rate in
space environment has been proposed, based on the phenomenological cross
section notion. Proposed numerical procedure is adapted to the multiple cell
upset characterization in highly scaled memories. Nonlocality of the ion impact
has been revealed as the key concept determining the difference between
physical processes in low scaled and highly scaled memories. The model has been
validated by comparison between the simulation results and the literature
on-board data. It was shown that proposed method provides single-valued
prediction results correlating well with on-board data based solely on cross
section data and LET spectra without any hidden fitting parameters and
procedures.
