  We predict the existence of an intriguing "disorder by order" phenomenon in
graphene transport where higher quality (and thus more ordered) samples, while
having higher mobility at high carrier density, will manifest more strongly
insulating (and thus effectively more disordered) behavior as the carrier
density is lowered compared with lower quality samples (with higher disorder)
which exhibit an approximate resistivity saturation phenomenon at low carrier
density near the Dirac point. This predicted behavior simulating a
metal-insulator transition, which we believe to have recently been observed in
an experiment at Manchester University [L. A. Ponomarenko et al., Nat. Phys. 7,
958 (2011)], arises from the suppression of Coulomb disorder induced
inhomogeneous puddles near the charge neutrality point in high quality graphene
samples.
