  We consider a delay differential equation (DDE) model for mode-locked
operation in class-A semiconductor lasers containing both gain and absorber
sections. The material processes are adiabatically eliminated as these are
considered fast in comparison to the delay time for a long cavity device. We
determine the steady states and analyze their bifurcations using DDE-BIFTOOL
[K. Engelborghs, T. Luzyanina, and D. Roose, ACM Trans. Math. Softw. 28, 1
(2002)]. Multiple forms of coexistence, transformation and hysteretic behavior
of stable steady states and fundamental periodic regimes are discussed in
bifurcation diagrams.
