  We investigate the signature of the low-energy electronic excitations in the
Raman spectrum of monolayer and bilayer graphenes. The dominant contribution to
the Raman spectra is due to the interband electron-hole pairs, which belong to
the irreducible representation A$_2$ of the point group C$_{6v}$ of the
graphene lattice, and are characterised by crossed polarisation of incoming and
outgoing photons. At high magnetic fields, this is manifested by the excitation
of electron-hole (e-h) inter-Landau-level transitions with selection rule
$n^-\to n^+$. Weaker Raman-active inter-Landau-level modes also exist. One of
those has a selection rule similar to the infrared absorption process,
$n^-\to(n\pm1)^+$, but the created e-h excitation belongs to the irreducible
representation E$_2$ (rather than E$_1$) and couples to the optical phonon
mode, thus undergoing an anticrossing with the optical phonon G-line in Raman
in strong magnetic field. The fine structure of acquired by the G-line due to
such anticrossing depends on the carrier density, inhomogeneity of doping, and
presence of inhomogeneous strain in the sample.
