  We propose here a first-principles, parameter free, real space method for the
study of disordered extended defects in solids. We shall illustrate the power
of the technique with an application to graphene sheets with randomly placed
Stone-Wales defects and shall examine the signature of such random defects on
the density of states as a function of their concentration. The technique is
general enough to be applied to a whole class of systems with lattice
translational symmetry broken not only locally but by extended defects and
defect clusters. The real space approach will allow us to distinguish
signatures of specific defects and defect clusters.
