  We report a novel high pressure structural sequence for the functionally
graded thermoelectric, narrow band gap semiconductor AgSbTe$_{2}$, using angle
dispersive x-ray diffraction in a diamond anvil cell with synchrotron radiation
at room temperature. The compound undergoes a B1 to B2 transition; the
transition proceeds through an intermediate amorphous phase found between 17-26
GPa that is quenchable down to ambient conditions. The pressure induced
structural transition observed in this compound is the first of its type
reported in this ternary cubic family, and it is new for the B1-B2 transition
pathway reported to date. Density Functional Theory (DFT) calculations
performed for the B1 and B2 phases are in good agreement with the experimental
results.
