  We studied low temperature (T=50mK) in-plane magnetoresistance of a dilute
two-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits an
apparent metal-insulator transition. We found an anisotropic magnetoresistance,
which changes dramatically at high in-plane fields ($B_{\parallel}\agt$5T) as
the hole density is varied. At high densities where the system behaves metallic
at $B_{\parallel}=0$, the transverse magnetoresistance is larger than the
longitudinal magnetoresistance. With decreasing the hole density the difference
becomes progressively smaller, and at densities near the "critical" density and
lower, the longitudinal magnetoresistance becomes larger than the transverse
magnetoresistance.
