  We present a comprehensive investigation into disorder-mediated charge
transport in InP nanowires in the statistical doping regime. At zero gate
voltage transport is well described by the space charge limited current model
and Efros-Shklovskii variable range hopping, but positive gate voltage
(electron accumulation) reveals a previously unexplored regime of nanowire
charge transport that is not well described by existing theory. The ability to
continuously tune between these regimes provides guidance for the extension of
existing models and directly informs the design of next-generation nanoscale
electronic devices.
