  Resistive Random Access Memory (ReRAM) is a promising candidate for
implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits.
ReRAM cells exhibit significant variability across different memristive devices
and cycles, necessitating further improvements in the areas of devices,
algorithms, and applications. To achieve this, understanding the stochastic
behavior of the different ReRAM technologies is essential. The
NeuroBreakoutBoard (NBB) is a versatile instrumentation platform to
characterize Non-Volatile Memories (NVMs). However, the NBB itself does not
provide any functionality in the form of software or a controller. In this
paper, we present a control board for the NBB able to perform reliability
assessments of 1T1R ReRAM crossbars. In more detail, an interface that allows a
host PC to communicate with the NBB via the new control board is implemented.
In a case study, we analyze the Cycle-to-Cycle (C2C) variation and read disturb
TiN/Ti/HfO2/TiN cells for different read voltages to gain an understanding of
their operational behavior.
