  Aberration-corrected optics have made electron microscopy at
atomic-resolution a widespread and often essential tool for
nanocharacterization. Image resolution is dominated by beam energy and the
numerical aperture of the lens ({\alpha}), with state-of-the-art reaching ~0.47
{\AA} at 300 keV. Two-dimensional materials are imaged at lower beam energies
to avoid knock-on damage, limiting spatial resolution to ~1 {\AA}. Here, by
combining a new electron microscope pixel array detector with the dynamic range
to record the complete distribution of transmitted electrons and full-field
ptychography to recover phase information from the full phase space, we
increased the spatial resolution well beyond the traditional lens limitations.
At 80 keV beam energy, our ptychographic reconstructions significantly improved
image contrast of single-atom defects in MoS2, reaching an information limit
close to 5{\alpha}, corresponding to a 0.39 {\AA} Abbe resolution, at the same
dose and imaging conditions where conventional imaging modes reach only 0.98
{\AA}.
