  In the past five years, most of the paradigmatic concepts employed in
spintronics have been replicated substituting ferromagnets by antiferromagnets
in critical parts of the devices. The numerous research efforts directed to
manipulate and probe the magnetic moments in antiferromagnets have been
gradually established a new and independent field known as antiferromagnetic
spintronics. In this paper, we focus on the electrical control and detection of
antiferromagnetic moments at a constant temperature. We address separately the
experimental results concerning insulating and metallic thin films as they
correspond to voltage and electrical current controlled devices, respectively.
First, we present results on the voltage control of antiferromagnetic order in
insulating thin films. The experiments show that voltage pulses can switch the
chirality of a modulated antiferromagnetic structure. Second, we describe the
recent advances in metallic antiferromagnetic systems. We present results
obtained with the first USB-operated portable device able to perform the
non-volatile electrical current-induced switching of an antiferromagnet
combined with magnetoresistive readout at room temperature. We discuss on
potential applications that can be realized using antiferromagnetic memory
cells.
