  We consider the effect of metal electrodes on the polarizability and
nucleation of metal phases responsible for the operations of the emerging solid
state memory. Our analysis is based on the image charge approach. We find
results for point dipoles in static and oscillatory fields as well as an erect
cylindrical nucleus near metal surfaces in resistive switching memories. We
predict a large increase in polarizability and nucleation rate due to the metal
electrode effects.
