  The possible existence of short-channel effects in oxide field-effect
transistors is investigated by exploring field-effect transistors with various
gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies
reveal the existence of channel-length modulation and drain-induced barrier
lowering for gate lengths below 1 {\mu}m, with a characteristic behavior
comparable to semiconducting devices. With the fabrication of field-effect
transistors with gate lengths as small as 60 nm the results demonstrate the
possibility to fabricate by electron-beam lithography functional devices based
on complex oxides with characteristic lengths of several ten nanometers.
