  We report the use of a surfactant molecule during the epitaxy of graphene on
SiC(0001) that leads to the growth in an unconventional orientation, namely
$R0^\circ$ rotation with respect to the SiC lattice. It yields a very
high-quality single-layer graphene with a uniform orientation with respect to
the substrate, on the wafer scale. We find an increased quality and homogeneity
compared to the approach based on the use of a pre-oriented template to induce
the unconventional orientation. Using spot profile analysis low energy electron
diffraction, angle-resolved photoelectron spectroscopy, and the normal
incidence x-ray standing wave technique, we assess the crystalline quality and
coverage of the graphene layer. Combined with the presence of a
covalently-bound graphene layer in the conventional orientation underneath, our
surfactant-mediated growth offers an ideal platform to prepare epitaxial
twisted bilayer graphene via intercalation.
