  We measure the low-field Hall resistivity of a magnetically-doped
two-dimensional electron gas as a function of temperature and
electrically-gated carrier density. Comparing these results with the carrier
density extracted from Shubnikov-de Haas oscillations reveals an excess Hall
resistivity that increases with decreasing temperature. This excess Hall
resistivity qualitatively tracks the paramagnetic polarization of the sample,
in analogy to the ferromagnetic anomalous Hall effect. The data are consistent
with skew-scattering of carriers by disorder near the crossover to
localization.
