  Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum
wells show a ten-fold increase of the spin-relaxation rate as a function of
applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar
variation at 300 K, in agreement with calculations based on the Rashba effect.
Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum
well interface asymmetry. The results indicate the achievability of
voltage-gateable spin-memory time longer than 3 ns simultaneously with high
electron mobility.
