  Electric-field induced magnetization switching in multiferroic
magnetoelectric devices is promising for beyond Moore's law computing. We show
here that interface-coupled multiferroic heterostructures, i.e., a
ferroelectric layer coupled with a ferromagnetic layer, are particularly
suitable for highly-dense, non-volatile, and ultra-low-energy computing. By
solving stochastic Landau-Lifshitz-Gilbert equation of magnetization dynamics
in the presence of room-temperature thermal fluctuations, we demonstrate that
error-resilient switching of magnetization is possible in sub-nanosecond delay
while expending a minuscule amount of energy of $\sim$1 attojoule. Such devices
can be operated by drawing energy from the environment without the need for an
external battery.
