  We describe the electronic conductivity, as a function of the Fermi energy,
in the Bernal bilayer graphene (BLG) in presence of a random distribution of
vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG)
with the same defect concentrations. These transport properties are related to
the values of fundamental length scales such as the elastic mean free path
$L_{e}$, the localization length $\xi$ and the inelastic mean free path
$L_{i}$. Usually the later, which reflect the effect of inelastic scattering by
phonons, strongly depends on temperature $T$. In BLG an additional
characteristic distance $l_1$ exists which is the typical traveling distance
between two interlayer hopping events. We find that when the concentration of
defects is smaller than 1\%--2\%, one has $l_1 \le L_e \ll \xi$ and the BLG has
transport properties that differ from those of the MLG independently of
$L_{i}(T)$. Whereas for larger concentration of defects $L_{e} < l_1 \ll \xi $,
and depending on $L_{i}(T)$, the transport in the BLG can be equivalent (or
not) to that of two decoupled MLG. We compare two tight-binding model
Hamiltonians with and without hopping beyond the nearest neighbors.
