  The main challenge in the development of non-classical light sources remains
their brightness that limits the data transmission and processing rates as well
as the realization of practical devices operating in the telecommunication
range. To overcome this issue, we propose to utilize universal and flexible
in-situ electron-beam lithography and hereby, we demonstrate a successful
technology transfer to telecom wavelengths. As an example, we fabricate and
characterize especially designed photonic structures with strain-engineered
single InGaAs/GaAs quantum dots that are deterministically integrated into
disc-shaped mesas. Utilizing this approach, an extraction efficiency into
free-space (within a numerical aperture of 0.4) of (10${\pm}$2) % has been
experimentally obtained in the 1.3 \mu m wavelength range in agreement with
finite-element method calculations.
