  We report the detection of individual emitters in silicon belonging to seven
different families of optically-active point defects. These fluorescent centers
are created by carbon implantation of a commercial silicon-on-insulator wafer
usually employed for integrated photonics. Single photon emission is
demonstrated over the [1.1,1.55]-$\mu$m range, spanning the O- and C-telecom
bands. We analyse their photoluminescence spectrum, dipolar emission and
optical relaxation dynamics at 10K. For a specific family, we show a constant
emission intensity at saturation from 10K to temperatures well above the
77K-liquid nitrogen temperature. Given the advanced control over
nanofabrication and integration in silicon, these novel artificial atoms are
promising candidates for Si-based quantum technologies.
