  Monolayer C$_3$N is an emerging two-dimensional indirect band gap
semiconductor with interesting mechanical, thermal, and electronic properties.
In this work we present a description of C$_3$N electronic and dielectric
properties, focusing on the so-called momentum-resolved exciton band structure.
Excitation energies and oscillator strengths are computed in order to
characterize bright and dark states, and discussed also with respect to the
crystal symmetry. Activation of excitonic states is observed for finite
transferred momenta: Indeed, we find an active indirect exciton at $\sim$ 0.9
eV, significantly lower than the direct optical gap of 1.96 eV, with excitonic
binding energies in the range 0.6-0.9 eV for the lowest states. As for other 2D
materials, we find a quasi-linear excitonic dispersion close to $\Gamma$, which
however shows a downward convexity related to the indirect band gap of C$_3$N
as well as to the dark nature of the involved excitons.
