  Silicon pixel detectors produced according to the ATLAS Pixel Detector design
were tested in a beam at CERN in the framework of the ATLAS collaboration. The
detectors used n+/n sensors with oxygenated silicon substrates. The
experimental behaviour of the detectors after irradiation to 1.1 10**15
n_eq/cm**2 and 600 kGy is discussed. At the sensor bias voltage of 600 V the
depleted depth is measured to be 229 um, the mean collected charge is 20000
electrons, the detection efficiency is 98.2% and the spatial resolution is 9.6
um
