  We discuss the efficacy of evolutionary method for the purpose of structural
analysis of amorphous solids. At present ab initio molecular dynamics (MD)
based melt-quench technique is used and this deterministic approach has proven
to be successful to study amorphous materials. We show that a stochastic
approach motivated by Darwinian evolution can also be used to simulate
amorphous structures. Applying this method, in conjunction with density
functional theory (DFT) based electronic, ionic and cell relaxation, we
re-investigate two well known amorphous semiconductors, namely silicon and
indium gallium zinc oxide (IGZO). We find that characteristic structural
parameters like average bond length and bond angle are within $\sim$ 2% to
those reported by ab initio MD calculations and experimental studies.
