  We investigated the performance of spin transfer torque random access memory
(STT-RAM) cell with cross shaped Heusler compound based free layer using
micromagnetic simulations. We designed the free layer using Cobalt based
Heusler compounds. Here in this paper, simulation results predict that
switching time from one state to other state is reduced. Also it is examined
that critical switching current density to switch the magnetization of free
layer of STT RAM cell is reduced.
