  The bottleneck in achieving fully integrated silicon photonics lies in
silicon-based light-emitting devices that are compatible with standard CMOS
technology. Dislocation loops by implanting boron into silicon and annealing
represents an enticing strategy to transform highly inefficient silicon into a
luminescent material. However, the emission at telecommunication wavelength
suffers from the strong thermal quenching effect, resulting in low efficiency
at room temperature. Here, we applied a new deep cooling process to address
this issue. Interestingly, we find that electrons and holes recombine through
defects emitting two photons, one in near infrared (NIR, 1.3~1.6 {\mu}m) and
the other in mid-infrared band (MIR, around 3.5 {\mu}m). The PL intensity at
NIR increases by three folds when the temperature increases from 77 K to 300K.
Furthermore, the NIR light emission of reverse biased silicon diodes was
significantly enhanced compared to forward bias, emitting the maximum output
power of 42 nW at 60 mA. The results offer new opportunities for the
development of IR light sources in integrated circuits.
