  SrMoO$_3$ is a promising material for its excellent electrical conductivity,
but growing high-quality thin films remains a challenge. Here we synthesized
epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique
under a low oxygen-flow rate. Introduction of SrTiO$_3$ buffer layers of 4--8
unit cells between the film and the (001)-oriented SrTiO$_3$ or KTaO$_3$
substrate was crucial to remove impurities and/or roughness of the film
surface. The obtained film shows improved electrical conductivities as compared
with films obtained by other techniques. The high quality of the SrMoO$_3$ film
is also verified by angle-resolved photoemission spectroscopy (ARPES)
measurements showing clear Fermi surfaces.
