  We study transport through a ferromagnetic single-electron transistor. The
resistance is represented as a path integral, so that systems where the tunnel
resistances are smaller than the quantum resistance can be investigated. Beyond
the low order sequential tunneling and co-tunneling regimes, a large
magnetoresistance ratio at sufficiently low temperatures is found. In the
opposite limit, when the thermal energy is larger than the charging energy, the
magnetoresistance ratio is only slightly enhanced.
