  We present ultra-shallow diffusion profiles performed by short-time diffusion
of boron from the gas phase using controlled surface injection of
self-interstitials and vacancies into the n-type Si(100) wafers. The diffusion
profiles of this art are found to consist of both longitudinal and lateral
silicon quantum wells of the p-type that are self-assembled between the alloys
of microdefects, which are produced by previous oxidation. These alloys appear
to be passivated during short-time diffusion of boron thereby forming neutral
del'ta barriers. The fractal type self-assembly of microdefects is found to be
created by varying the thickness of the oxide overlayer, which causes the
system of microcavities embedded in the quantum well plane.
