  This paper considers the self-consistent Coulomb interaction within arrays of
self-assembled InAs quantum dots (QDs) which are embedded in a pn structure.
Strong emphasis is being put on the statistical occupation of the electronic QD
states which has to be solved self-consistently with the actual
three-dimensional potential distribution. A model which is based on a Green's
function formalism including screening effects is used to calculate the
interaction of QD carriers within an array of QDs, where screening due to the
inhomogeneous bulk charge distribution is taken into acount. We apply our model
to simulate capacitance-voltage (CV) characteristics of a pn structure with
embedded QDs. Different size distributions of QDs and ensembles of spatially
perodic and randomly distributed arrays of QDs are investigated.
