  Although the creation of spin polarization in various non-magnetic media via
electrical spin injection from a ferromagnetic tunnel contact has been
demonstrated, much of the basic behavior is heavily debated. It is reported
here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs
that local magnetostatic fields arising from interface roughness dramatically
alter and even dominate the accumulation and dynamics of spins in the
semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to
reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous
and non-collinear with the injector magnetization. The inverted Hanle effect
serves as experimental signature. This interaction needs to be taken into
account in the analysis of experimental data, particularly in extracting the
spin lifetime and its variation with different parameters (temperature, doping
concentration). It produces a broadening of the standard Hanle curve and
thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si
at room temperature it is shown that the spin lifetime is larger than
previously determined, and a new lower bound of 0.29 ns is obtained. The
results are expected to be general and occur for spins near a magnetic
interface not only in semiconductors but also in metals, organic and
carbon-based materials including graphene, and in various spintronic device
structures.
