  Superlattice in graphene generates extra Dirac points in the band structure
and their number depends on the superlattice potential strength. Here, we have
created a lateral superlattice in a graphene device with a tunable barrier
height using a combination of two gates. In this Letter, we demonstrate the use
of lateral superlattice to modify the band structure of graphene leading to the
emergence of new Dirac cones. This controlled modification of the band
structure persists up to 100 K.
