  Despite the lack of reproducible experimental confirmation, group-V elements
have been considered as possible sources of p-type doping in ZnO in the form of
simple and complex defects. Using ab initio calculations, based on
state-of-the-art hybrid exchange-correlation functional, we study a wide range
of defects and defect complexes related with N, P, As, and Sb impurities. We
show that none of the candidates for p-type doping can be considered a good
source of holes in the valence band due to deep acceptor levels and low
formation energies of compensating donor defects. In addition, we discuss the
stability of complexes in different regimes.
