  The limits of pushing storage density to the atomic scale are explored with a
memory that stores a bit by the presence or absence of one silicon atom. These
atoms are positioned at lattice sites along self-assembled tracks with a pitch
of 5 atom rows. The writing process involves removal of Si atoms with the tip
of a scanning tunneling microscope. The memory can be reformatted by controlled
deposition of silicon. The constraints on speed and reliability are compared
with data storage in magnetic hard disks and DNA.
