  Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapour Deposition,
have been used to fabricate high quality Josephson junctions with Al
superconducting electrodes. The conductance spectra (dI/dV) of the junctions
show clear dip-peak structures characteristic of multiple Andreev reflections.
The temperature dependence of the dip-peak features reveals a highly
transparent Al/Bi$_2$Se$_3$ topological insulator nanoribbon interface and
Josephson junction barrier. This is supported by the high values of the
Bi$_2$Se$_3$ induced gap and of I$_c$R$_n$ (I$_c$ critical current, R$_n$
normal resistance of the junction) product both of the order of 160 $\mu$eV, a
value close to the Al gap. The devices present an extremely low relative
resistance noise below 1$\times$10$^{-12}$ $\mu$m$^2$/Hz comparable to the best
Al tunnel junctions, which indicates a high stability in the transmission
coefficients of transport channels. The ideal Al/Bi$_2$Se$_3$ interface
properties, perfect transparency for Cooper pair transport in conjunction with
low resistive noise make these junctions a suitable platform for further
studies of the induced topological superconductivity and Majorana bound states
physics.
