  Using density functional theory (DFT) we report results for the electronic
structure and vibrational dynamics of hydrogenated {\beta} reconstructed
Silicon Carbide (001) (3x2) surfaces with various levels of hydrogenation.
These results were obtained using density functional theory with a generalized
gradient exchange correlation function. The calculations reveal that
metallization can be achieved via hydrogen atoms occupying the second silicon
layer. Further increases of hydrogen occupation on the second silicon layer
sites result in a loss of this metallization. For the former scenario, where
metallization occurs, we found a new vibrational mode at 1870 cm-1, which is
distinct from the mode associated with hydrogen atoms on the first layer.
Furthermore, we found the diffusion barrier for a hydrogen atom to move from
the second to the third silicon layer to be 258 meV.
