  Scaling superconducting digital circuits requires fundamental changes in the
current material set and fabrication process. The transition to 300 mm wafers
and the implementation of advanced lithography are instrumental in facilitating
mature CMOS processes, ensuring uniformity, and optimizing the yield. This
study explores the properties of NbxTi(1-x)N films fabricated by magnetron DC
sputtering on 300 mm Si wafers. As a promising alternative to traditional Nb in
device manufacturing, NbxTi(1-x)N offers numerous advantages, including
enhanced stability and scalability to smaller dimensions, in both processing
and design. As a ternary material, NbxTi(1-x)N allows engineering material
parameters by changing deposition conditions. The engineered properties can be
used to modulate device parameters through the stack and mitigate failure
modes. We report characterization of NbxTi(1-x)N films at less than 2%
thickness variability, 2.4% Tc variability and 3% composition variability. The
films material properties such as resistivity (140-375 {\Omega}cm) and critical
temperature Tc (4.6 K - 14.1 K) are correlated with stoichiometry and
morphology of the films. Our results highlight the significant influence of
deposition conditions on crystallographic texture along the films and its
correlation with Tc.
