  We demonstrate an electric field control of anomalous Hall effect emerging in
CaIrO$_3$/CaMnO$_3$ heterostructures. We fabricate both electron-type and
hole-type carrier samples by tuning epitaxial strain and then control the
carrier density in CaIrO$_3$ layer via electric double layer gating technique.
As the Fermi energy of CaIrO$_3$ is tuned close to the Dirac line node,
anomalous Hall conductivity is enlarged in both carrier-type samples. This
result reveals that the anomalous Hall effect comes from the intrinsic origin
reflecting the Dirac like dispersion in CaIrO$_3$. We propose that band
splitting induced by the interface ferromagnetism yields several band crossing
points near the Dirac line node. These points play as a source of the Berry
curvature and contribute to the anomalous Hall effect.
