  The manipulation of symmetry provides an effective way to tailor the physical
orders in solid-state systems. With the breaking of both the inversion and
time-reversal symmetries, non-reciprocal magneto-transport may emerge in
assorted non-magnetic systems to enrich spintronic physics. Here, we report the
observation of the uni-directional magneto-resistance (UMR) in the
lattice-matched InSb/CdTe film up to room temperature. Benefiting from the
strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in
the hetero-junction region, the resulting Rashba-type spin-orbit coupling and
quantum confinement warrant stable angular-dependent second-order charge
current with the non-reciprocal coefficient 1-2 orders of magnitude larger than
most non-centrosymmetric materials at 298 K. More importantly, this
heterostructure configuration enables highly-efficient gate tuning of the
rectification response in which the enhancement of the UMR amplitude by 40% is
realized. Our results advocate the narrow-gap semiconductor-based hybrid system
with the robust two-dimensional interfacial spin texture as a suitable platform
for the pursuit of controllable chiral spin-orbit devices and applications.
