  Here we report the development of high-efficiency microscale GaAs laser power
converters, and their successful transfer printing onto silicon substrates,
presenting a unique, high power, low-cost and integrated power supply solution
for implantable electronics, autonomous systems and internet of things
applications. We present 300 {\mu}m diameter single-junction GaAs laser power
converters and successfully demonstrate the transfer printing of these devices
to silicon using a PDMS stamp, achieving optical power conversion efficiencies
of 48% and 49% under 35 and 71 W/cm2 808 nm laser illumination respectively.
The transferred devices are coated with ITO to increase current spreading and
are shown to be capable of handling very high short-circuit current densities
up to 70 A/cm2 under 141 W/cm2 illumination intensity (~1400 Suns), while their
open circuit voltage reaches 1235 mV, exceeding the values of pre-transfer
devices indicating the presence of photon-recycling. These optical power
sources could deliver Watts of power to sensors and systems in locations where
wired power is not an option, while using a massively parallel, scalable, and
low-cost fabrication method for the integration of dissimilar materials and
devices.
