  This paper introduces monolayer molybdenum disulfide (MoS2) based
junction-less (JL) field-effect transistor (FET) and evaluates its performance
at the smallest foreseeable (5.9 nm) transistor channel length as per the
International Technology Roadmap for Semiconductors (ITRS), by employing
rigorous quantum transport simulations. By comparing with MoS2 based
conventional FETs, it is found that the JL structure naturally lends MoS2 FETs
with superior device electrostatics, and higher ON-current for both
high-performance and low-standby-power applications, especially at high
impurity doping densities. Along with the advantages of the MoS2 JL-FETs, the
effects of impurity scattering induced carrier mobility degradation of JL-FETs
is also highlighted as a key technological issue to be addressed for exploiting
their unique features.
