  Transport experiments in high mobility (110) GaAs heterostructures have been
performed at very low temperatures 8 mK. At higher Landau-Levels we observe a
transport anisotropy that bears some similarity with what is already seen at
half-odd-integer filling on (001) oriented substrates. In addition we report
the first observation of transport anisotropies within the lowest Landau-Level.
This remarkable new anisotropy is independent of the current direction and
depends on the polarity of the magnetic field.
