  We have demonstrated surface-plasmon induced change in spontaneous emission
rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots
(QD). Using time-resolved and continuous-wave photoluminescence measurements,
the recombination rate in AlN/GaN QD is shown to be enhanced when spontaneous
emission is resonantly coupled to a metal-surface plasmon mode. The exciton
recombination process via Ag-surface plasmon modes is observed to be as much as
3-7 times faster than in normal QD spontaneous emission and depends strongly on
the emission wavelength and silver thickness.
