  Coulomb driven, magneto-optically induced electron and hole bound states from
a series of heavily doped GaAs/Al(0.3)Ga(0.7)As single heterojunctions (SHJ)
are revealed in high magnetic fields. At low magnetic fields (nu > 2), the
photoluminescence spectra display Shubnikov de-Haas type oscillations
associated with the empty second subband transition. In the regime of the
Landau filling factor nu < 1 and 1 < nu <2, we found strong bound states due to
Mott type localizations. Since a SHJ has an open valence band structure, these
bound states are a unique property of the dynamic movement of the valence holes
in strong magnetic fields.
