  Rhombohedral-stacked few-layer graphene (FLG) has been receiving an
ever-increasing attention owing to its peculiar electronic properties that
could lead to enticing phenomena such as superconductivity and magnetic
ordering. Up to now, experimental studies on such material have been mainly
limited by the difficulty in isolating it in thickness exceeding 3 atomic
layers with device-compatible size. In this work, rhombohedral graphene with
thickness up to 9 layers and areas up to ~50 micrometers square is grown via
chemical vapor deposition (CVD) on suspended Cu foils and transferred onto
target substrates via etch-free delamination. The domains of rhombohedral FLG
are identified by Raman spectroscopy and are found to alternate with domains of
Bernal-stacked FLG within the same crystal in a stripe-like configuration. A
combined analysis of micro-Raman mapping, atomic force microscopy and optical
microscopy indicates that the formation of rhombohedral-stacked FLG is strongly
correlated to the copper substrate morphology. Cu step bunching results in
bending of FLG and interlayer displacement along preferential crystallographic
orientations, as determined experimentally by electron microscopy, thus
inducing the stripe-like domains. The growth and transfer of rhombohedral FLG
with the reported thickness and size shall facilitate the observation of
predicted unconventional physics and ultimately add to its technological
relevance.
