  In this work, a novel highly fabrication tolerant polarization beam splitter
(PBS) is presented on an InP platform. To achieve the splitting, we combine the
Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder
interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward
bias to exploit the plasma dispersion effect and modify the phase of both the
TE and TM mode. The other arm of the MZI is driven in reverse bias to exploit
the Pockels effect which affects only the TE mode. By adjusting the voltages of
the two phase shifters, a different interference condition can be set for the
TE and the TM modes thereby splitting them at the output of the MZI. By
adjusting the voltages, the very tight fabrication tolerances known for fully
passive PBS are eased. The experimental results show that an extinction ratio
better than 15 dB and an on-chip loss of 3.5 dB over the full C-band
(1530-1565nm) are achieved.
