  ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developed
multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by
x-ray photoelectron spectroscopy, corresponding to the electronic configuration
of [Xe]4f1. Electrical resistivity showed the nonmonotonic temperature
dependence with a sharp resistivity maximum, concomitant with a magnetization
kink at 10 K, suggesting antiferromagnetic transition. In addition,
magnetoresistance showed a large angular-dependent magnetoresistance. These
results imply that carrier transport in the Bi2- square net could be influenced
by magnetic ordering in the Ce-O layer owing to its unique layered structure
[Bi2-/(Ce2O2)2+], particularly in the form of epitaxial thin films.
