  The full potential of graphene in integrated circuits can only be realized
with a reliable ultra-thin high-{\kappa} top-gate dielectric. Here, we report
the first statistical analysis of the breakdown characteristics of dielectrics
on graphene, which allows the simultaneous optimization of gate capacitance and
the key parameters that describe large-area uniformity and dielectric strength.
In particular, vertically heterogeneous and laterally homogenous Al2O3 and HfO2
stacks grown via atomic-layer deposition and seeded by a molecularly thin
perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high
uniformities (Weibull shape parameter {\beta} > 25) and large breakdown
strengths (Weibull scale parameter, EBD > 7 MV/cm) that are comparable to
control dielectrics grown on Si substrates.
