  Intersubband transitions in a superlattice under homogeneous electric field
is studied within the tight-binding approximation. Since the levels are
equi-populated, the non-zero response appears beyond the Born approximation.
Calculations are performed in the resonant approximation with scattering
processes exactly taken into account. The absorption coefficient is equal zero
for the resonant excitation while a negative absorption (gain without
inversion) takes place below the resonance. A detectable gain in the THz
spectral region is obtained for the low-doped $GaAs$-based superlattice and
spectral dependencies are analyzed taking into account the interplay between
homogeneous and inhomogeneous mechanisms of broadening.
