  The field-free spin-orbit torque induced 180{\deg} reorientation of
perpendicular magnetization is beneficial for the high performance magnetic
memory. The antiferromagnetic material (AFM) can provide higher operation speed
than the ferromagnetic counterpart. In this paper, we propose a trilayer
AFM/Insulator/Heavy Metal structure as the AFM memory device. We show that the
field-free switching of the AFM with perpendicular N\'eel vector can be
achieved by using two orthogonal currents, which provide the uniform
damping-like torque and stagger field-like torque, respectively. The reversible
switching can be obtained by reversing either current. A current density of
1.79 10^11A/m^2 is sufficient to induce the switching. In addition, the two
magnetic moments become noncollinear during the switching. This enables an
ultrafast switching within 40 picoseconds. The device and switching mechanism
proposed in this work offer a promising approach to deterministically switch
the AFM with perpendicular N\'eel vector. It can also stimulate the development
of ultrafast AFM-based MRAM.
