  At sub-20nm technologies CMOS scaling faces severe challenges primarily due
to fundamental device scaling limitations, interconnection overhead and complex
manufacturing. Migration to 3D has been long sought as a possible pathway to
continue scaling, however, intrinsic requirements of CMOS are not compatible
for fine-grained 3D integration. We proposed a truly fine-grained 3D integrated
circuit fabric called Skybridge that solves nanoscale challenges and achieves
orders of magnitude benefits over CMOS. In Skybridge, device, circuit,
connectivity, thermal management and manufacturing issues are addressed in an
integrated 3D compatible manner. At the core of Skybridge assembly are uniform
vertical nanowires, which are functionalized with architected features for
fabric integration. All active components are created primarily using
sequential material deposition steps on these nanowires. Lithography and doping
are performed prior to any functionalization and their precision requirements
are significantly reduced. This paper introduces Skybridge manufacturing
pathway that is developed based on extensive process, device simulations and
experimental metrology, and uses established processes. Experimental
demonstrations of key process steps are also shown.
