  The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into
memory by combining a ferromagnet with a magnetoelectric (ME) element for
information writing, and a spin-orbit (SO) element for information read-out
through spin-charge conversion. Among candidate SO materials to achieve a large
MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have
shown very large spin-charge conversion efficiencies, albeit mostly in
spin-pumping experiments. Here, we report all-electrical spin-injection and
spin-charge conversion experiments in nanoscale devices harnessing the inverse
Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated
nanodevices in which a spin current injected from a cobalt layer into the 2DEG
is converted into a charge current. We optimized the spin-charge conversion
signal by applying back-gate voltages, and studied its temperature evolution.
We further disentangled the inverse Edelstein contribution from spurious
effects such as the planar Hall effect, the anomalous Hall effect or the
anisotropic magnetoresistance. The combination of non-volatility and high
energy efficiency of these devices could potentially lead to new technology
paradigms for beyond-CMOS computing architectures.
