  In this paper, density functional theory calculations are used to explore the
electronic and atomic reconstruction at interfaces between III-III/I-V oxides.
In particular, at these interfaces, two dimensional electron gases (2DEGs) with
twice the interfacial charge densities of the prototypical LaTiO3/SrTiO3
heterostructure are observed. Furthermore, a significant decrease in the band
effective masses of the conduction electrons is shown, suggesting that possible
enhancements in electron mobilities may be achievable. These findings represent
a framework for chemically modulating 2DEGs, thereby providing a platform
through which the underlying physics of electron confinement can be explored
with implications for modern microelectronic devices.
