  We study the charge profile of a C60-FET (field effect transistor) as used in
the experiments of Schoen, Kloc and Batlogg. Using a tight-binding model, we
calculate the charge profile treating the Coulomb interaction in a mean-field
approximation. The charge profile behaves similarly to the case of a continuous
space-charge layer, in particular it is confined to a single interface layer
for doping higher than ~0.3 electron (or hole) per C60 molecule. The morahedral
disorder of the C60 molecules smoothens the structure in the density of states.
