  A chemical-free technique for fabricating submicron complex oxide structures
has been developed based on selective epitaxial growth. The crystallinity and
hence the conductivity of the complex oxide is inhibited by amorphous SrTiO3
(STO). Using a combination of pulsed laser deposition and electron-beam
lithography, amorphous STO barriers are first deposited on a single crystal
substrate. A thin film is then deposited on the patterned substrate with the
amorphous STO barriers acting to electrically and physically isolate different
regions of the film. Since no chemical or physical etchants come in contact
with the deposited film, its integrity and stability are preserved. This
technique has successfully produced sub-micron YBCO and LCMO structures.
