  The increasing resistance of Cu interconnects for decreasing dimensions is a
major challenge in continued downscaling of integrated circuits beyond the 7-nm
technology node as it leads to unacceptable signal delays and power consumption
in computing. The resistivity of Cu increases due to electron scattering at
surfaces and grain boundaries of the interconnects at the nanoscale.
Topological semimetals, owing to their topologically protected surface states
and suppressed electron backscattering, are promising material candidates to
potentially replace current Cu interconnects as low-resistance interconnects.
Here, we report the attractive resistivity scaling of topological metal MoP
nanowires and show that the resistivity values are comparable to those of Cu
interconnects below 500 nm$^2$ cross-section areas. More importantly, we
demonstrate that the dimensional scaling of MoP nanowires, in terms of line
resistance versus total cross-sectional area, is superior to those of effective
Cu and barrier-less Ru interconnects, suggesting MoP is an attractive solution
to the current scaling challenge of Cu interconnects.
