  We have measured the current-voltage (I-V) of type II InAs/GaSb/InAs double
heterojunctions (DHETs) with 'GaAs like' interface bonding and GaSb thickness
between 0-1200 \AA. A negative differential resistance (NDR) is observed for
all DHETs with GaSb thickness $>$ 60 \AA below which a dramatic change in the
shape of the I-V and a marked hysteresis is observed. The temperature
dependence of the I-V is found to be very strong below this critical GaSb
thickness. The I-V characteristics of selected DHETs are also presented under
hydrostatic pressures up to 11 kbar. Finally, a mid infra-red
electroluminescence is observed at 1 bar with a threshold at the NDR valley
bias. The band profile calculations presented in the analysis are markedly
different to those given in the literature, and arise due to the positive
charge that it is argued will build up in the GaSb layer under bias. We
conclude that the dominant conduction mechanism in DHETs is most likely to
arise out of an inelastic electron-heavy-hole interaction similar to that
observed in single heterojunctions (SHETs) with 'GaAs like' interface bonding,
and not out of resonant electron-light-hole tunnelling as proposed by Yu et al.
A Zener tunnelling mechanism is shown to contribute to the background current
beyond NDR.
