  The industrial realization of graphene has so far been limited by challenges
related to the quality, reproducibility, and high process temperatures required
to manufacture graphene on suitable substrates. We demonstrate that epitaxial
graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with
an onset of graphitization starting around $450-500^\circ\text{C}$. From the
chemical reaction between SiC and thin films of Fe or Ru, $\text{sp}^{3}$
carbon is liberated from the SiC crystal and converted to $\text{sp}^{2}$
carbon at the surface. The quality of the graphene is demonstrated using
angle-resolved photoemission spectroscopy and low-energy electron diffraction.
Furthermore, the orientation and placement of the graphene layers relative to
the SiC substrate is verified using angle-resolved absorption spectroscopy and
energy-dependent photoelectron spectroscopy, respectively. With subsequent
thermal treatments to higher temperatures, a steerable diffusion of the metal
layers into the bulk SiC is achieved. The result is graphene supported on
magnetic silicide or optionally, directly on semiconductor, at temperatures
ideal for further large-scale processing into graphene based device structures.
