  The electronic and optical properties of graphene monoxide, a new type of
semiconductor materials, are first theoretically studied based on density
functional theory. Electronic calculations show that the band gap is 0.952 eV
which indicate that graphene monoxide is a direct band gap semiconductor. The
density of states of graphene monoxide and the partial density of states for C
and O are given to understand the electronic structure. In addition, we
calculate the optical properties of graphene monoxide including the complex
dielectric function, absorption coefficient, the complex refractive index,
loss-function, reflectivity and conductivity. These results provide a physical
basis for the potential applications in optoelectronic devices.
