  Recently, a contamination-free dry transfer method for graphene grown by
chemical vapor deposition (CVD) has been reported that allows to directly
pick-up graphene from the copper growth substrate using a flake of hexagonal
boron nitride (hBN), resulting in ultrahigh charge carrier mobility and low
overall doping. Here, we report that not only hBN, but also flakes of
molybdenum disulfide (MoS$_2$) can be used to dry transfer graphene. This, on
one hand, allows for the fabrication of complex van-der-Waals heterostructures
using CVD graphene combined with different two-dimensional materials and, on
the other hand, can be a route towards a scalable dry transfer of CVD graphene.
The resulting heterostructures are studied using low temperature transport
measurements revealing a strong charge carrier density dependence of the
carrier mobilities (up to values of 12,000 cm$^2$/(Vs)) and the residual charge
carrier density fluctuations near the charge neutrality point when changing the
carrier density in the MoS$_2$ by applying a top gate voltage.
