  We report an efficient room temperature photon source at 1320 nm
telecommunication wavelength from nanostructured silicon surface. The
activation of this light source was realized by treating the surface of Si
wafer by vapor of heavy water (D2O) containing a mixture of hydrofluoric and
nitric acids. Treatment without deuterium generates an intense light emission
band at the band-edge of Si, while the deuterium treatment alone creates a
strong emission band at 1320 nm in the near infrared. It was found that the
deuterium is actively involved in the formation of a nanostructured Si surface
as evidenced from relative strength of the Si-O vibrational modes and presence
of N-D bondings. The origin of this photon source was discussed in terms of
oxygen related defect states and dislocations. The Si surface treated by
Deuterium containing mixture exhibits a strong rectifying electrical activity
as it is demonstrated by Schottky diodes fabricated on these wafers. Being
compatible with mature silicon circuitry, the source may find applications in
photonics and optoelectronics.
