  Semiconductor nanowires have emerged as versatile components in
superconducting hybrid devices for Majorana physics and quantum computing. The
transport properties of nanowires can be tuned either by field-effect or
doping. We investigated a series of InAs nanowires which conductivity has been
modified by n-type doping using tellurium. In addition to electron microscopy
studies, the wires were also examined with atomic probe tomography to obtain
information about the local incorporation of Te atoms. It was found that the Te
atoms mainly accumulate in the core of the nanowire and at the corners of the
{110} side facets. The efficiency of n-type doping was also confirmed by
transport measurements. As a demonstrator hybrid device, a Josephson junction
was fabricated using a nanowire as a weak link. The corresponding measurements
showed a clear increase of the critical current with increase of the dopant
concentration.
