  SrTiO3 is known to exhibit resistive memory effect either with cation-doping
or with high-temperature thermal reduction. Here, we add another scheme,
ionic-bombardment, to the list of tools to create resistive memory effect on
SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance
difference was observed between the high and low resistive states, which is an
order of magnitude larger than those achieved by the conventional thermal
reduction process. One of the advantages of this new scheme is that it can be
easily combined with lithographic processes to create spatially-selective
memory effect.
