  A simulated annealing (SA) approach is employed in the determination of
different tight binding (TB) sets of parameters for the nitride semiconductors
AlN, GaN and InN, as well their limitations and potentialities are also
discussed. Two kinds of atomic basis set are considered: (\textit{i}) the
orthogonal $sp^3s*$ with interaction up to second neighbors and (\textit{ii}) a
$spd$ non-orthogonal set, with the Hamiltonian matrix elements calculated
within the Extended H\"uckel Theory (EHT) prescriptions. For the non-orthogonal
method, TB parameters are given for both zincblend and wurtzite crystalline
structures.
