  High-harmonic generation (HHG) in solids is a fundamental nonlinear
phenomenon, which can be efficiently controlled by modifying system parameters
such as doping-level and temperature. In order to correctly predict the
dependence of HHG on these parameters, consistent theoretical formulation of
the light-matter coupling is crucial. Recently, contributions to the current
that are often missing in the HHG analysis based on the semiconductor Bloch
equations have been pointed out [J. Wilhelm, et.al. PRB 103 125419 (2021)]. In
this paper, by systematically analyzing the doping and gap-size dependence of
HHG in gapped graphene, we discuss the practical impact of such terms. In
particular, we focus on the role of the current $J_{\rm ra}^{(2)}$, which
originates from the change of the intraband dipole via interband transition.
When the gap is small and the system is close to half filling, intraband and
interband currents mostly cancel, thus suppressing the HHG signal - an
important property that is broken when neglecting $J_{\rm ra}^{(2)}$.
Furthermore, without $J_{\rm ra}^{(2)}$, the doping and gap-size dependence of
HHG becomes qualitatively different from the full evaluation. Our results
demonstrate the importance of the consistent expression of the current to study
the parameter dependence of HHG for the small gap systems.
