  Various mesoscopic devices exploit electrostatic side gates for their
operation. In this paper, we investigate how voltage-biasing of graphene side
gates modulates the electrical transport characteristics of graphene channel.
We explore myriads of typical side gated devices such as symmetric dual side
gates and asymmetric single side gate biasing, in monolayer and bilayer
graphene. The side gates modulate the electrostatic doping in the graphene
channel whose effect is reflected in transport measurement. This modulation
efficiency is systematically characterized for all our devices and agrees well
with the modeling presented.
