  Single crystal GeSe2 nanobelts (NBs) were successfully grown using chemical
vapor deposition techniques. The morphology and structure of the nanostructures
were characterized using scanning electron microscopy, transmission electron
microscopy, X-ray diffractometry, and Raman spectroscopy. Electronic transport
properties, photoconductive characteristics, and temperature-dependent
electronic characteristics were examined on devices made of individual GeSe2
nanobelt. Localized photoconductivity study shows that the large photoresponse
of the device primarily occurs at the metal-NB contact regions. In addition,
the electrically Schottky nature of nanobelt-Au contact and p-type conductivity
nature of GeSe2 nanobelt are extracted from the current-voltage characteristics
and spatially resolved photocurrent measurements. The high sensitivity and
quick photoresponse in the visible wavelength range indicate potential
applications of individual GeSe2 nanobelt devices in realizing optoelectronic
switches.
