  In this paper we study reflection of holes in direct-band semiconductors from
the linear potential barrier. It is shown that light-heavy hole transformation
matrix is universal. It depends only on a dimensionless product of the light
hole longitudinal momentum and the characteristic length determined by the
slope of the potential and doesn't depend on the ratio of light and heavy hole
masses, provided this ratio is small. It is shown that the transformation
coefficient goes to zero both in the limit of small and large longitudinal
momenta, however the phase of a reflected hole is different in these limits. An
approximate analytical expression for the light-heavy hole transformation
coefficient is found.
