  Silicon is a material whose technological application is well established,
and obtaining this material in nanostructured form increases its possibility of
integration in current technology. Silicene is a natural compatibility with
current silicon-based electronics industry. Furthermore, doping is a technique
that can be often used to adjust the band gap of silicene and at the same time
introduce new functions. Here we investigate Several aspects of silicene doping
with chromium, such as dopant solubility limits, site preference for adsorption
and doping, and formation of magnetic domains. In this work we carried out
investigation on diffusion and doping of chromium atoms on silicene. We use
density-functional theory to identify the electronic and magnetic properties of
tchromium atoms on monolayer and bilayer silicene. We find that magnetization
depends on key parameters such as buckling, interlayer distance and adsorption
site.
