  The field of topological insulators (TIs) is rapidly growing. Concerning
possible applications, the search for materials with an easily controllable TI
phase is a key issue. The quantum spin Hall effect, characterized by a single
pair of helical edge modes protected by time-reversal symmetry, has been
demonstrated in HgTe-based quantum wells (QWs) with an inverted bandgap. We
analyze the topological properties of a generically coupled HgTe-based double
QW (DQW) and show how in such a system a TI phase can be driven by an
inter-layer bias voltage, even when the individual layers are non-inverted. We
argue, that this system allows for similar (layer-)pseudospin based physics as
in bilayer graphene but with the crucial absence of a valley degeneracy.
