  Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due
to their properties of band-gap reduction and spin-orbit splitting. The
incorporation of Bi into antimonide based III-V semiconductors is very
attractive for the development of new optoelectronic devices working in the
mid-infrared range (2-5 $\mu$m). However, due to its large size, Bi does not
readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides
is thus very challenging. This book chapter presents the most recent
developments in the epitaxy and characterization of GaSbBi alloys and
heterostructures.
