  The utilization of multiple current terminals on millimeter-scale graphene
p-n junction devices has enabled the measurement of many atypical, fractional
multiples of the quantized Hall resistance at the i=2 plateau. These fractions
take the form a/b R_H and can be determined both analytically and by
simulations. These experiments validate the use of either the LTspice circuit
simulator or the analytical framework recently presented in similar work.
Furthermore, the production of several devices with large-scale junctions
substantiates the approach of using simple ultraviolet lithography to obtain
junctions of sufficient sharpness.
