  Exploiting 2D materials for spintronic applications can potentially realize
next-generation devices featuring low-power consumption and quantum operation
capability. The magnetic exchange field (MEF) induced by an adjacent magnetic
insulator enables efficient control of local spin generation and spin
modulation in 2D devices without compromising the delicate material structures.
Using graphene as a prototypical 2D system, we demonstrate that its coupling to
the model magnetic insulator (EuS) produces a substantial MEF (> 14 T) with
potential to reach hundreds of Tesla, which leads to orders-of-magnitude
enhancement in the spin signal originated from Zeeman spin-Hall effect.
Furthermore, the new ferromagnetic ground state of Dirac electrons resulting
from the strong MEF may give rise to quantized spin-polarized edge transport.
The MEF effect shown in our graphene/EuS devices therefore provides a key
functionality for future spin logic and memory devices based on emerging 2D
materials in classical and quantum information processing.
