  We exposed nitrogen-implanted diamonds to beams of swift uranium and gold
ions (~1 GeV) and find that these irradiations lead directly to the formation
of nitrogen vacancy (NV) centers, without thermal annealing. We compare the
photoluminescence intensities of swift heavy ion activated NV- centers to those
formed by irradiation with low-energy electrons and by thermal annealing. NV-
yields from irradiations with swift heavy ions are 0.1 of yields from low
energy electrons and 0.02 of yields from thermal annealing. We discuss possible
mechanisms of NV-center formation by swift heavy ions such as electronic
excitations and thermal spikes. While forming NV centers with low efficiency,
swift heavy ions enable the formation of three dimensional NV- assemblies over
relatively large distances of tens of micrometers. Further, our results show
that NV-center formation is a local probe of (partial) lattice damage
relaxation induced by electronic excitations from swift heavy ions in diamond.
