  With recent trends on miniaturizing oxide-based devices, the need for
atomic-scale control of surface/interface structures by pulsed laser deposition
(PLD) has increased. In particular, realizing uniform atomic termination at the
surface/interface is highly desirable. However, a lack of understanding on the
surface formation mechanism in PLD has limited a deliberate control of
surface/interface atomic stacking sequences. Here, taking the prototypical
SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we
investigated the formation of different interfacial termination sequences
(BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found
that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be
achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas
pressure (Ptotal), growth mode, or growth rate. Our results indicate that the
thermodynamic stability of the BTO surface at the low-energy kinetics stage of
PLD can play an important role in surface/interface termination formation. This
work paves the way for realizing termination engineering in functional oxide
heterostructures.
