  Multiple-gate SOI MOSFETs with gate length equal to 25 nm are compared using
device Monte Carlo simulation. In such architectures, the short channel effects
may be controlled with much less stringent body and oxide thickness
requirements than in single-gate MOSFET. Our results highlight that planar
double-gate MOSFET is a good candidate to obtain both high current drive per
unit-width and weak subthreshold leakage with large integration density and
aggressive delay time, compared to non planar devices such as triple-gate or
quadruple-gate structures.
