  Terahertz time-domain spectroscopy and scanning probe potentiometry were used
to investigate charge trapping in polymer field-effect transistors fabricated
on a silicon gate. The hole density in the transistor channel was determined
from the reduction in the transmitted terahertz radiation under an applied gate
voltage. Prolonged device operation creates an exponential decay in the
differential terahertz transmission, compatible with an increase in the density
of trapped holes in the polymer channel. Taken in combination with scanning
probe potentionmetry measurements, these results indicate that device
degradation is largely a consequence of hole trapping, rather than of changes
to the mobility of free holes in the polymer.
