  We describe a novel monolithic ion trap that combines the flexibility and
scalability of silicon microfabrication technologies with the superior trapping
characteristics of traditional four-rod Paul traps. The performace of the
proposed microfabricated trap approaches that of the macroscopic structures.
The fabrication process creates an angled through-chip slot which allows
backside ion loading and through-laser access while avoiding surface light
scattering and dielectric charging. The trap geometry and dimensions are
optimized for confining long ion chains with equal ion spacing [G.-D. Lin, et
al., Europhys. Lett. 86, 60004 (2009)]. Control potentials have been derived to
produce linear, equally spaced ion chains of up to 50 ions spaced at 10 um.
With the deep trapping depths achievable in this design, we expect that these
chains will be sufficiently long-lived to be used in quantum simulations of
magnetic systems [E.E. Edwards, et al., Phys. Rev. B 82, 060412(R) (2010)]. The
trap is currently being fabricated at Georgia Tech using VLSI techniques.
