  In considering a novel function in ferromagnetic tunnel junctions consisting
of ferromagnet(FM)/barrier/FM junctions, we theoretically investigate multiple
valued (or multi-level) cell property, which is in principle realized by
sensing conductances of four states recorded with magnetization configurations
of two FMs; that is, (up,up), (up,down), (down,up), (down,down). To obtain such
4-valued conductances, we propose FM1/spin-polarized barrier/FM2 junctions,
where the FM1 and FM2 are different ferromagnets, and the barrier has spin
dependence. The proposed idea is applied to the case of the barrier having
localized spins. Assuming that all the localized spins are pinned parallel to
magnetization axes of the FM1 and FM2, 4-valued conductances are explicitly
obtained for the case of many localized spins. Furthermore, objectives for an
ideal spin-polarized barrier are discussed.
