  We present a detailed investigation into the optical characteristics of
individual InAs quantum dots (QDs) grown by metalorganic chemical vapor
deposition, with low temperature emission in the telecoms window around 1300
nm. Using micro-photoluminescence (PL) spectroscopy we have identified neutral,
positively charged, and negatively charged exciton and biexciton states.
Temperature-dependent measurements reveal dot-charging effects due to
differences in carrier diffusivity. We observe a pronounced linearly polarized
splitting of the neutral exciton and biexciton lines (~250 ueV) resulting from
asymmetry in the QD structure. This asymmetry also causes a mixing of the
excited trion states which is manifested in the fine structure and polarization
of the charged biexciton emission; from this data we obtain values for the
ratio between the anisotropic and isotropic electron-hole exchange energies of
(Delta1)/(Delta0)= 0.2--0.5. Magneto-PL spectroscopy has been used to
investigate the diamagnetic response and Zeeman splitting of the various
exciton complexes. We find a significant variation in g-factor between the
exciton, the positive biexciton, and the negative biexciton; this is also
attributed to anisotropy effects and the difference in lateral extent of the
electron and hole wavefunctions.
