  In this study, we report the progress made towards the definition of a
modular compact modeling technology for graphene field-effect transistors
(GFET) that enables the electrical analysis of arbitrary GFET-based integrated
circuits. A set of primary models embracing the main physical principles
defines the ideal GFET response under DC, transient (time domain), AC
(frequency domain), and noise (frequency domain) analysis. Other set of
secondary models accounts for the GFET non-idealities, such as extrinsic-,
short-channel-, trapping/detrapping-, self-heating-, and non-quasi
static-effects, which could have a significant impact under static and/or
dynamic operation. At both device and circuit levels, significant consistency
is demonstrated between the simulation output and experimental data for
relevant operating conditions. Additionally, we provide a perspective of the
challenges during the scale up of the GFET modeling technology towards higher
technology readiness levels while drawing a collaborative scenario among
fabrication technology groups, modeling groups, and circuit designers.
