  The P+ {\alpha}-Si /N+ polycrystalline solar cell is molded using the AMPS-1D
device simulator to explore the new high efficiency thin film poly-silicon
solar cell. In order to analyze the characteristics of this device and the
thickness of N+ poly-silicon, we consider the impurity concentration in the N+
poly-silicon layer and the work function of transparent conductive oxide (TCO)
in front contact in the calculation. The thickness of N+ poly-silicon has
little impact on the device when the thickness varies from 20 {\mu}m to 300
{\mu}m. The effects of impurity concentration in polycrystalline are analyzed.
The conclusion is drawn that the open-circuit voltage (Voc) of P+ {\alpha}-Si
/N+ polycrystalline solar cell is very high, reaching 752 mV, and the
conversion efficiency reaches 9.44%. Therefore, based on the above optimum
parameters the study on the device formed by P+ {\alpha}-Si/N+ poly-silicon is
significant in exploring the high efficiency poly-silicon solar cell.
