  SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for
engineering domains in BiFeO3. New oxide devices can be envisioned by
integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using
a three-terminal device configuration, we study vertical transport in a
SRO/Nb:STO device at the nanoscale and find local differences in transport,
that originate due to the high selectivity of SRO growth on the underlying
surface terminations in Nb:STO. This causes a change in the interface energy
band characteristics and is explained by the differences in the spatial
distribution of the interface-dipoles at the local Schottky interface.
