  This paper aims to give a short overview on some relevant processing issues
existing in SiC and GaN power devices technology. The main focus is put on the
importance of the channel mobility in transistors, which is one of the keys to
reduce RON and power dissipation. Specifically, in the case of the 4H-SiC
planar MOSFETs the most common solutions and recent trends to improve the
channel mobility are presented. In the case of GaN, the viable routes to
achieve normally-off HEMTs operation are briefly introduced, giving emphasis to
the case of the recessed hybrid MISHEMT.
