  Layered transition-metal chalcogenides (Zr,Hf)GeTe$_{4}$ were screened out
from database of Atomwork as a candidate for pressure-induced superconductivity
due to their narrow band gap and high density of state near the Fermi level.
The (Zr,Hf)GeTe$_{4}$ samples were synthesized in single crystal and then the
compositional ratio, crystal structures, and valence states were investigated
via energy dispersive spectrometry, single crystal X-ray diffraction, and X-ray
photoelectron spectroscopy, respectively. The pressure-induced
superconductivity in both crystals were first time reported by using a diamond
anvil cell with a boron-doped diamond electrode and an undoped diamond
insulating layer. The maximum superconducting transition temperatures of
ZrGeTe$_{4}$ and HfGeTe$_{4}$ were 6.5 K under 57 GPa and 6.6 K under 60 GPa,
respectively.
