  We propose a non-destructive means of characterizing a semiconductor wafer
via measuring parameters of an induced quantum dot on the material system of
interest with a separate probe chip that can also house the measurement
circuitry. We show that a single wire can create the dot, determine if an
electron is present, and be used to measure critical device parameters. Adding
more wires enables more complicated (potentially multi-dot) systems and
measurements. As one application for this concept we consider silicon
metal-oxide-semiconductor and silicon/silicon-germanium quantum dot qubits
relevant to quantum computing and show how to measure low-lying excited states
(so-called "valley" states). This approach provides an alternative method for
characterization of parameters that are critical for various
semiconductor-based quantum dot devices without fabricating such devices.
