  A general formulation of boundary conditions for semiconductor-metal contacts
follows from a phenomenological procedure sketched here. The resulting boundary
conditions, which incorporate only physically well-defined parameters, are used
to study the classical unipolar drift-diffusion model for the Gunn effect. The
analysis of its stationary solutions reveals the presence of bistability and
hysteresis for a certain range of contact parameters. Several types of Gunn
effect are predicted to occur in the model, when no stable stationary solution
exists, depending on the value of the parameters of the injecting contact
appearing in the boundary condition. In this way, the critical role played by
contacts in the Gunn effect is clearly stablished.
