  A theoretical study of the DOS, resistivity and thermal conductivity of a
metallized epitaxial graphene with impurities and structural inhomogeneous of
the short-range order type is performed. The conditions for the appearance and
disappearance of a gap in DOS are obtained for the case where the location of
defects changes. A temperature dependence of relaxation time, DOS, resistivity
and thermal conductivity is described only in the presence of the structures
forming large-area cells in the graphene layer.
