  The temperature dependence of hydrogen (H) desorption from Si(100)
H-terminated surfaces by a scanning tunneling microscope (STM) is reported for
negative sample bias. It is found that the STM induced H desorption rate ($R$)
decreases several orders of magnitude when the substrate temperature is
increased from 300 K to 610 K. This is most noticeable at a bias voltage of -7
V where $R$ decreases by a factor of ~200 for a temperature change of 80 K,
whilst it only decreases by a factor of ~3 at -5 V upon the same temperature
change. The experimental data can be explained by desorption due to vibrational
heating by inelastic scattering via a hole resonance. This theory predicts a
weak suppression of desorption with increasing temperature due to a decreasing
vibrational lifetime, and a strong bias dependent suppression due to a
temperature dependent lifetime of the hole resonance.
