  We develop a finite element based dislocation dynamics model to simulate the
structure and strength of dislocation junctions in FCC crystals. The model is
based on anisotropic elasticity theory supplemented by the explicit inclusion
of the separation of perfect dislocations into partial dislocations bounding a
stacking fault. We demonstrate that the model reproduces in precise detail the
structure of the Lomer-Cottrell lock already obtained from atomistic
simulations. In light of this success, we also examine the strength of
junctions culminating in a stress-strength diagram which is the locus of points
in stress space corresponding to dissolution of the junction.
