  Epitaxial titanium diboride thin films have been deposited on sapphire
substrates by Pulsed Laser Ablation technique. Structural properties of the
films have been studied during the growth by Reflection High Energy Electron
Diffraction (RHEED) and ex-situ by means of X-ray diffraction techniques; both
kinds of measurements indicate a good crystallographic orientation of the TiB2
film both in plane and along the c axis. A flat surface has been observed by
Atomic Force Microscopy imaging. Electrical resistivity at room temperature
resulted to be five times higher than the value reported for single crystals.
The films resulted to be also very stable at high temperature, which is very
promising for using this material as a buffer layer in the growth of magnesium
diboride thin films.
