  Novel generation of silicon-based photodetectors are attractive alternatives
to the traditional phototubes. They offer significant advantages but they
present new challenges too. Presence of afterpulses may affect many
characteristics of the photodetectors. Simple statistical model of afterpulsing
is used to evaluate the contribution to the observed dark count rates, to
examine the contribution to the pulse height resolution and to demonstrate the
modification of the observed timing properties of the SiPMs.
