  A comparison of the performance of high resolution lithographic tools is
presented here. We use extreme ultraviolet interference lithography, electron
beam lithography, and He ion beam lithography tools on two different resists
that are processed under the same conditions. The dose-to-clear and the
lithographic contrast are determined experimentally and are used to compare the
relative efficiency of each tool. The results are compared to previous studies
and interpreted in the light of each tool-specific secondary electron yield. In
addition, the patterning performance is studied by exposing dense line/spaces
patterns and the relation between critical dimension and exposure dose is
discussed. Finally, the Lumped Parameter Model is employed in order to
quantitatively estimate the critical dimension of line/spaces, using each tool
specific aerial image. Our implementation is then validated by fitting the
model to the experimental data from interference lithography exposures, and
extracting the resist contrast.
