  Monolayer transition metal dichalcogenides are uniquely-qualified materials
for photonics because they combine well defined tunable direct band gaps and
selfpassivated surfaces without dangling bonds. However, the atomic thickness
of these 2D materials results in low photo absorption limiting the achievable
photo luminescence intensity. Such emission can, in principle, be enhanced via
nanoscale antennae resulting in; a. an increased absorption cross-section
enhancing pump efficiency, b. an acceleration of the internal emission rate via
the Purcell factor mainly by reducing the antennas optical mode volume beyond
the diffraction limit, and c. improved impedance matching of the emitter dipole
to the freespace wavelength. Plasmonic dimer antennae show orders of magnitude
hot-spot field enhancements when an emitter is positioned exactly at the
midgap. However, a 2D material cannot be grown, or easily transferred, to
reside in mid-gap of the metallic dimer cavity. In addition, a spacer layer
between the cavity and the emissive material is required to avoid non-radiative
recombination channels. Using both computational and experimental methods, in
this work we show that the emission enhancement from a 2D emitter- monomer
antenna cavity system rivals that of dimers at much reduced lithographic
effort. We rationalize this finding by showing that the emission enhancement in
dimer antennae does not specifically originate from the gap of the dimer
cavity, but is an average effect originating from the effective cavity
crosssection taken below each optical cavity where the emitting 2D film is
located. In particular, we test an array of different dimer and monomer antenna
geometries and observe a representative 3x higher emission for both monomer and
dimer cavities as compared to intrinsic emission of Chemical Vapor Deposition
synthesized WS2 flakes.
