  Solid-state point defects are attracting increasing attention in the field of
quantum information science, because their localized states can act as a
spin-photon interface in devices that store and transfer quantum information,
which have been used for applications in quantum computing, sensing, and
networking. In this work we have performed high-throughput calculations of over
50,000 point defects in various semiconductors including diamond, silicon
carbide, and silicon. Focusing on quantum applications, we characterize the
relevant optical and electronic properties of these defects, including
formation energies, spin characteristics, transition dipole moments,
zero-phonon lines. We find 2331 composite defects which are stable in intrinsic
silicon, which are then filtered to identify many new optically bright telecom
spin qubit candidates and single-photon sources. All computed results and
relaxed defect structures are made publicly available online at
quantumdefects.com, a living database of defect characteristics which will be
continually expanded with new defects and properties, and will enable
researchers to select defects tailored to their applications.
