  Tunneling hetero-junctions (THJs) usually induce confined states at the
regions close to the tunnel junction which significantly affect their transport
properties. Accurate numerical modeling of such effects requires combining the
non-equilibrium coherent quantum transport through tunnel junction, as well as
the quasi-equilibrium statistics arising from the strong scattering in the
induced quantum wells. In this work, a novel atomistic model is proposed to
include both effects: the strong scattering in the regions around THJ and the
coherent tunneling. The new model matches reasonably well with experimental
measurements of Nitride THJ and provides an efficient engineering tool for
performance prediction and design of THJ based devices.
