  The chapter generalizes results on influence of uniaxial strain and
adsorption on the electron states and charge transport or localization in
graphene with different configurations of imperfections (point defects):
resonant (neutral) adsorbed atoms either oxygen- or hydrogen-containing
molecules or functional groups, vacancies or substitutional atoms, charged
impurity atoms or molecules, and distortions. To observe electronic properties
of graphene-admolecules system, we applied electron paramagnetic resonance
technique in a broad temperature range for graphene oxides as a good basis for
understanding the electrotransport properties of other active carbons. Applied
technique allowed observation of possible metal-insulator transition and
sorption pumping effect as well as discussion of results in relation to the
granular metal model. The electronic and transport properties are calculated
within the framework of the tight-binding model along with the Kubo-Greenwood
quantum-mechanical formalism. Depending on electron density and type of the
sites, the conductivity for correlated and ordered adsorbates is found to be
enhanced in dozens of times as compared to the cases of their random
distribution. In case of the uniaxially strained graphene, the presence of
point defects counteracts against or contributes to the band-gap opening
according to their configurations. The band-gap behaviour is found to be
nonmonotonic with strain in case of a simultaneous action of defect ordering
and zigzag deformation. The amount of localized charge carriers (spins) is
found to be correlated with the content of adsorbed centres responsible for the
formation of potential barriers and, in turn, for the localization effects.
Physical and chemical states of graphene edges, especially at a uniaxial strain
along one of them, play a crucial role in electrical transport phenomena in
graphene-based materials.
