  By the application of a small oscillating magnetic field parallel to the main
magnetic field and perpendicular to the transport current, we were able to
generate a voltage dip in the I-V curves of Nb$_3$Sn similar to the peak-effect
pattern observed in earlier resistivity measurements. The pattern was history
dependent and exhibited a memory effect. In addition we observed in the I-V
curves for a high shaking-field amplitude a step feature of unknown origin.
