  A long-standing goal of computer technology is to process and store digital
information with the same device in order to implement new architectures. One
way to accomplish this is to use nanomagnetic `non-volatile' logic gates that
can perform Boolean operations and then store the output data in the
magnetization states of nanomagnets, thereby doubling as both logic and memory.
Unfortunately, many proposed nanomagnetic gates do not possess the seven
essential characteristics of a Boolean logic gate: concatenability,
non-linearity, isolation between input and output, gain, universal logic
implementation, scalability and error resilience. More importantly, their
energy-delay products and error-rates vastly exceed that of conventional
transistor-based logic gates, which is a drawback. Here, we propose a
non-volatile voltage-controlled nanomagnetic logic gate that possesses all the
necessary characteristics of a logic gate and whose energy-delay product is ~2
orders of magnitude less than that of other nano-magnetic (non-volatile) logic
gates and ~1 order of magnitude less than that of (volatile) CMOS-based logic
gates. The error-resilience is also superior to that of other known
nanomagnetic gates.
