  We report the integration of the insulating ferromagnet GdN with epitaxial
films of the topological insulator Bi2Se3 and present detailed structural,
magnetic and transport characterization of the heterostructures. Fabrication of
multi-channel Hall bars with bare and GdN-capped sections enables direct
comparison of magnetotransport properties. We show that the presence of the
magnetic overlayer results in suppression of weak anti-localization at the top
surface.
