  We present simulations of metallization morphologies under ionized sputter
deposition conditions, obtained by a new theoretical approach. By means of
molecular dynamics simulations using a carefully designed interaction
potential, we analyze the surface adsorption, reflection, and etching reactions
taking place during Al physical vapor deposition, and calculate their relative
probability. These probabilities are then employed in a feature-scale
cellular-automaton simulator, which produces calculated film morphologies in
excellent agreement with scanning-electron-microscopy data on ionized sputter
deposition.
