  Impurity induced low temperature upturns in both the ab-plane and the c-axis
dc-resistivities of cuprates in the pseudogap state have been observed in
experiments. We provide an explanation of this phenomenon by incorporating
impurity scattering of the charge carriers within a phenomenological model by
Yang-Rice-Zhang in this regime. The scattering between charge carriers and the
impurity atom is considered within the lowest order Born approximation.
Resistivity is calculated within Kubo formula using the impurity renormalized
spectral functions. Using physical parameters for cuprates, we describe
qualitative features of the upturn phenomena and its doping evolution that
coincides with the experimental findings and we stress the role of strong
electronic correlations.
