  The optical emission of InGaN quantum dots embedded in GaN nanowires is
dynamically controlled by a surface acoustic wave (SAW). The emission energy of
both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330
MHz. A small but systematic difference in the exciton and biexciton spectral
modulation reveals a linear change of the biexciton binding energy with the SAW
amplitude. The present results are relevant for the dynamic control of
individual single photon emitters based on nitride semiconductors.
