  We have fabricated (Ga,Mn)As nanostructures in which domain walls can be
pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can
switch the regions on either side of the constriction to either parallel or
antiparallel magnetization. All samples exhibit a positive magnetoresistance,
consistent with domain-wall trapping. For metallic samples we find a
magnetoresistance up to 8%, which can be understood from spin accumulation. In
samples where, due to depletion at the constriction, a tunnel barrier is
formed, we observe a magnetoresistance of up to 2000 %.
