  The temperature effect of quantum interference on resistivity is examined in
monolayer graphene, with experimental results showing that the amplitude of the
conductance fluctuation increases as temperature decreases. We find that this
behavior can be attributed to the decrease in the inelastic scattering
(dephasing) rate, which enhances the weak localization (WL) correction to
resistivity. Following a previous report that explained the relationship
between the universal conductance fluctuation (UCF) and WL regarding the gate
voltage dependence (D. Terasawa, et al., Phys. Rev. B 95 125427 (2017)), we
propose that the temperature dependence of the UCF in monolayer graphene can be
interpreted by the WL theory.
