  An appropriately parameterized compact analytical equation (APAE) is
suggested to account for charge carrier mobility in organic disordered
semiconductors (ODSs). This equation correctly reproduces the effects of
temperature $T$, carrier concentration $n$, and electric field $F$ on the
carrier mobility $\mu(T,F,n)$, as evidenced by comparison with analytical
theories and Monte Carlo simulations. The set of material parameters
responsible for charge transport is proven to be at varience to those used in
the so-called extended Gaussian disorder model (EGDM) approach, which is widely
exploited in commercially distributed device--simulation algorithms. While EGDM
is only valid for cubic lattices with a specific choice of parameters, APAE
describes charge transport in systems with spatial disorder in a wide range of
parameters. APAE is user-friendly and, thus, suitable for incorporation into
device-simulation algorithms.
