  Silicon is the dominant semiconductor in many semiconductor device
applications for a variety of reasons, including both performance and cost.
III-V materials have improved performance compared to silicon, but currently
they are relegated to applications in high-value or niche markets due to the
absence of a low-cost, high-quality production technique. Here we present an
advance in III-V materials synthesis using hydride vapor phase epitaxy that has
the potential to lower III-V semiconductor deposition costs by orders of
magnitude while maintaining the requisite optoelectronic material quality that
enables III-V-based technologies to outperform Si. We demonstrate the impacts
of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a
highly cost-constrained market. The emergence of a low-cost III-V deposition
technique will enable III-V electronic and opto-electronic devices, with all
the benefits that they bring, to permeate throughout modern society.
