  We propose a table-top method to obtain bilayer quasi-free-standing
epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing in
air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the buffer layer
is decoupled from the SiC substrate and becomes the second EG layer as
confirmed by the low energy electron diffraction, high-resolution transmission
electron microscopy, Raman scattering spectroscopy, X-ray photoelectron
spectroscopy, and angle-resolved photoelectron spectroscopy. The most likely
mechanism of the decoupling is given by the oxidation of the SiC surface, which
is quite similar to what happens in conventional annealing method in air but
with a process time by more than one order of magnitude less.
