  The structural and electrical properties of Ti-N films deposited by reactive
sputtering depend on their growth parameters, in particular the Ar:N2 gas
ratio. We show that the nitrogen percentage changes the crystallographic phase
of the film progressively from pure \alpha-Ti, through an \alpha-Ti phase with
interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric
TiNX to stoichiometric TiN. These changes also affect the superconducting
transition temperature, Tc, allowing, the superconducting properties to be
tailored for specific applications. After decreasing from a Tc of 0.4 K for
pure Ti down to below 50 mK at the Ti2N point, the Tc then increases rapidly up
to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp
increase of Tc makes it difficult to control the properties of the film from
wafer-to-wafer as well as across a given wafer to within acceptable margins for
device fabrication. Here we show that the nitrogen composition and hence the
superconductive properties are related to, and can be determined by,
spectroscopic ellipsometry. Therefore, this technique may be used for process
control and wafer screening prior to investing time in processing devices.
