  We study spin-dependent interband resonant tunneling in double-barrier
InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be
used as spin filters utilizing spin-selective tunneling of electrons through
the light-hole resonant channel. High densities of the spin polarized electrons
injected into bulk InAs make spin resonant tunneling devices a viable
alternative for injecting spins into a semiconductor. Another striking feature
of the proposed devices is the possibility of inducing additional resonant
channels corresponding to the heavy holes. This can be implemented by
saturating the in-plane magnetization in the quantum well.
