  In this paper, structural and electronic properties and stability of (10, 0)
born nitride nanotube (BNNT) are considered within density functional theory by
doping group IV elements of the periodic table. The HOMO-LUMO gap has been
strongly modified and treated a dual manner by choosing B or N sites for dopant
atoms. Formation energy calculation shows that B site doping is more stable
than N site doping. Results also show that all dopants turn the pristine BNNT
into a p-type semiconductor except for carbon-doped BNNT at B site.
