  There exists an enormous interest for the study of very high energy domain in
particle physics, both theoretically and experimentally, in the aim to
construct a general theory of the fundamental constituents of matter and of
their interactions. Until now, semiconductor detectors have widely been used in
modern high energy physics experiments. They are elements of the high
resolution vertex and tracking system, as well as of calorimeters. The main
motivation of this work is to discuss how to prepare some possible detectors -
only silicon option being considered, for the new era of HEP challenges because
the bulk displacement damage in the detector, consequence of irradiation,
produces effects at the device level that limit their long time utilisation,
increasing the leakage current and the depletion voltage, eventually up to
breakdown, and thus affecting the lifetime of detector systems. In this paper,
physical phenomena that conduce to the degradation of the detector are
discussed and effects are analysed at the device level (leakage current and
effective carrier concentration) in the radiation environments expected in the
next generation of hadron colliders after LHC, at the next lepton and
gamma-gamma colliders, as well as in astroparticle experiments, in conditions
of long time continuum irradiations, for different technological options. The
predicted results permit a better decision to obtain devices with harder
parameters to radiation.
