  We report on the fabrication and measurement of nanoscale devices based on
bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate
dielectrics. The top gates are patterned such that constrictions and islands
can be electrostatically induced by applying appropriate voltages to the gates.
The high quality of the devices becomes apparent from conductance quantization
in the constrictions at low temperature. The islands exhibit clear Coulomb
blockade and single-electron transport.
