  In this work we investigate the effect of the mechanical stress on the
performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic
anisotropy. We developed a 4-point bending setup, that allows us to apply a
constant stress over a large substrate area with access to electrical
measurements and external magnetic field. This setup enables us to measure key
device performance parameters, such as tunnel magnetoresistance (TMR),
switching current ($I_c^{50\%}$) and thermal stability ($\Delta$), as a
function of applied stress. We find that variations in these parameters are
negligible: less than $\SI{2}{\percent}$ over the entire measured range between
the zero stress condition and the maximum stress at the point of wafer
breakage.
