  We report on the emergence of an Electronic Griffiths Phase (EGP) in the
doped semiconductor FeSb$_{2}$, predicted for disordered insulators with random
localized moments in the vicinity of a metal-insulator transition (MIT).
Magnetic, transport, and thermodynamic measurements of
Fe(Sb$_{1-x}$Te$_{x}$)$_{2}$ single crystals show signatures of
disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for
strong electronic correlations. The EGP states are found on the metallic
boundary, between the insulating state ($x = 0$) and a long-range albeit weak
magnetic order ($x \geq 0.075$).
