  The realization of semiconductors that are ferromagnetic above room
temperature will potentially lead to a new generation of spintronic devices
with revolutionary electrical and optical properties. Transition temperatures
in doped ZnO are high but, particularly for Mn doping, the reported moments
have been small. We show that by careful control of both oxygen deficiency and
aluminium doping the ferromagnetic moments measured at room temperature in
n-type ZnMnO and ZnCoO are close to the ideal values of 5mB and 3mB
respectively. Furthermore a clear correlation between the magnetisation per
transition metal ion and the ratio of the number of carriers to the number of
transition metal donors was established as is expected for carrier induced
ferromagnetism for both the Mn and Co doped films. The dependence of the
magnetisation on carrier density is similar to that predicted for the
transition temperature for a dilute magnetic semiconductor in which the
exchange between the transition metal ions is through the free carriers.
