  We report on the vapor-solid growth of single crystalline few-layer MoS2
films on (0001)-oriented sapphire with excellent structural and electrical
properties over centimeter length scale. High-resolution X-ray diffraction
scans indicated that the films had good out-of-plane ordering and epitaxial
registry. A carrier density of ~2 x 1011 cm-2 and a room temperature mobility
of 192 cm2/Vs were extracted from space-charge limited transport regime in the
films. The electron mobility was found to exhibit in-plane anisotropy with a
ratio of ~ 1.8. Theoretical estimates of the temperature-dependent electron
mobility including optical phonon, acoustic deformation potential and remote
ionized impurity scattering were found to satisfactorily match the measured
data. The synthesis approach reported here demonstrates the feasibility of
device quality few-layer MoS2 films with excellent uniformity and high quality.
