  Interlayer interactions perturb the electronic structure of two-dimensional
materials and lead to new physical phenomena, such as van Hove singularities
and Hofstadter's butterfly pattern. Silicene, the recently discovered
two-dimensional form of silicon, is quite unique, in that silicon atoms adopt
competing <i>sp</i><sup>2</sup> and <i>sp</i><sup>3</sup> hybridization states
leading to a low-buckled structure promising relatively strong interlayer
interaction. In multilayer silicene, the stacking order provides an important
yet rarely explored degree of freedom for tuning its electronic structures
through manipulating interlayer coupling. Here, we report the emergence of van
Hove singularities in the multilayer silicene created by an interlayer
rotation. We demonstrate that even a large-angle rotation (> 20<sup>o</sup>)
between stacked silicene layers can generate a Moire pattern and van Hove
singularities due to the strong interlayer coupling in multilayer silicene. Our
study suggests an intriguing method for expanding the tunability of the
electronic structure for electronic applications in this two-dimensional
material.
