  We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both
experimentally and using a three-dimensional carrier dynamics simulation. A
uniform density of vacancies was formed over the optical absorption depth of
bulk GaAs samples by performing multi-energy implantations of arsenic ions (1
and 2.4MeV) and subsequent thermal annealing. In a series of THz emission
experiments the frequency of peak THz power was found to increase significantly
from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to
10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast
carrier dynamics to reproduce and explain these results. The effect of the
ion-induced damage was included in the simulation by considering carrier
scattering at neutral and charged impurities, as well as carrier trapping at
defect sites. Higher vacancy concentrations and shorter carrier trapping times
both contributed to shorter simulated THz pulses, the latter being more
important over experimentally realistic parameter ranges.
