  Quantum photonics technologies require a scalable approach for integration of
non-classical light sources with photonic resonators to achieve strong light
confinement and enhancement of quantum light emission. Point defects from
hexagonal Boron Nitride (hBN) are amongst the front runners for single photon
sources due to their ultra bright emission, however, coupling of hBN defects to
photonic crystal cavities has so far remained elusive. Here we demonstrate
on-chip integration of hBN quantum emitters with photonic crystal cavities from
silicon nitride (Si3N4) and achieve experimentally measured Q-factor of 3,300
for hBN/Si3N4 hybrid cavities. We observed 9-fold photoluminescence enhancement
of a hBN single photon emission at room temperature. Our work paves the way
towards hybrid integrated quantum photonics with hBN, and outlines an excellent
path for further development of cavity quantum electrodynamic experiments and
on-chip integration of 2D materials.
