  We point out a practical way to induce a finite charge Hall conductivity in
graphene via an off-diagonal strain. Our conclusions are based on a general
analysis and supported by numerical examples. The interplay between a
substrate-induced gap and the strain is discussed. We show that the
substrate-induced gap itself does not break the symmetry that maps one valley
onto the other, and hence does not yield a net charge Hall effect. The net
charge Hall conductivity is found to be sizable and should be observable in the
presence of both the gap and the strain. The sign of the Hall conductivity can
be tuned by varying the strain parameters. The valley Hall conductivity is
studied as well. The valley and the orbital magnetic moment accumulations on
the sample edges may be detected in a Hall conductivity experiment.
