  We report the interplay between In incorporation and strain relaxation
kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted
molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural
and morphological quality is obtained under In excess conditions, at In
accumulation limit, and at a growth temperature where InGaN decomposition is
active. Under such conditions, in situ and ex situ analysis of the evolution of
the crystalline structure with the growth thickness points to an onset of
misfit relaxation after the growth of 40 nm, and a gradual relaxation during
more than 200 nm which results in an inhomogeneous strain distribution along
the growth axis. This process is associated with a compositional pulling
effect, i.e. indium incorporation is partially inhibited in presence of
compressive strain, resulting in a compositional gradient with increasing In
mole fraction towards the surface.
