  In this article we develop an analytical theory that correlates the
macroscopic curvature of stressed film/substrate systems with the microscopic
in-plane and out-of-plane deflections of planar rotators. Extending this
stress-deflection relations in the case of nonlinear stress fields and
validating the results with the aid of finite element simulations. We use this
theory to study the heteroepitaxial growth of cubic silicon carbide on silicon
(100) and discover that due, to defects generated on the silicon substrate
during the carbonization process, wafer curvature techniques may not allow the
determination of the stress field in the grown films either quantitatively or
qualitatively.
