  We report on Terahertz detection by inverted band structure HgTe-based Field
Effect Transistor up to room temperature. At low temperature, we show that
nonlinearities of the transistor channel allows for the observation of the
quantum phase transition due to the avoided crossing of zero-mode Landau levels
in HgTe 2D topological insulators. These results pave the way towards Terahertz
topological Field Effect Transistors.
