  Bilayer graphene -- two coupled single graphene layers stacked as in graphite
-- provides the only known semiconductor with a gap that can be tuned
externally through electric field effect. Here we use a tight binding approach
to study how the gap changes with the applied electric field. Within a parallel
plate capacitor model and taking into account screening of the external field,
we describe real back gated and/or chemically doped bilayer devices. We show
that a gap between zero and midinfrared energies can be induced and externally
tuned in these devices, making bilayer graphene very appealing from the point
of view of applications. However, applications to nanotechnology require
careful treatment of the effect of sample boundaries. This being particularly
true in graphene, where the presence of edge states at zero energy -- the Fermi
level of the undoped system -- has been extensively reported. Here we show that
also bilayer graphene supports surface states localized at zigzag edges. The
presence of two layers, however, allows for a new type of edge state which
shows an enhanced penetration into the bulk and gives rise to band crossing
phenomenon inside the gap of the biased bilayer system.
