  Transition-metal oxide films, demonstrating the effects of both threshold and
nonvolatile memory resistive switching, have been recently proposed as
candidate materials for storage-class memory. In this work we describe some
experimental results on threshold switching in a number of various transition
metal (V, Ti, Fe, Nb, Mo, W, Hf, Zr, Mn, Y, and Ta) oxide films obtained by
anodic oxidation. Then, the results concerning the effects of bistable
resistive switching in MOM and MOS structures on the basis of such oxides as
V2O5, Nb2O5, and NiO are presented. It is shown that sandwich structures on the
basis of the Au/V2O5/SiO2/Si, Nb/Nb2O5/Au, and Pt/NiO/Pt can be used as memory
elements for ReRAM applications. Finally, model approximations are developed in
order to describe theoretically the effect of nonvolatile unipolar switching in
Pt NiO-Pt structures.
