  We report a study of the strain state of epitaxial MnSi films on Si(111)
substrates in the thick film limit (100-500~\AA) as a function of film
thickness using polarization-dependent extended x-ray absorption fine structure
(EXAFS). All films investigated are phase-pure and of high quality with a sharp
interface between MnSi and Si. The investigated MnSi films are in a thickness
regime where the magnetic transition temperature $T_\mathrm{c}$ assumes a
thickness-independent enhanced value of $\geq$43~K as compared with that of
bulk MnSi, where $T_\mathrm{c} \approx 29~{\rm K}$. A detailed refinement of
the EXAFS data reveals that the Mn positions are unchanged, whereas the Si
positions vary along the out-of-plane [111]-direction, alternating in
orientation from unit cell to unit cell. Thus, for thick MnSi films, the unit
cell volume is essentially that of bulk MnSi --- except in the vicinity of the
interface with the Si substrate (thin film limit). In view of the enhanced
magnetic transition temperature we conclude that the mere presence of the
interface, and its specific characteristics, strongly affects the magnetic
properties of the entire MnSi film, even far from the interface. Our analysis
provides invaluable information about the local strain at the MnSi/Si(111)
interface. The presented methodology of polarization dependent EXAFS can also
be employed to investigate the local structure of other interesting interfaces.
