  Theoretical research suggests a emergence of the Majorana bound states at the
ends of the nanowires. Experimental verifications of said concept has already
been executed, e.g., in superconductor/semiconductor nanowire devices where
interplay between superconducting gap, spin-orbit coupling and external
magnetic field allows for creation of zero-energy bound states. Recent
experiments propose a topological phase diagram by local modification of the
effective chemical potential. We discuss this possibility, using a model of
experimental system in form of semi-infinite S/N junction. We calculate the
zero--bias differential conductance $G$ in the case of the homogeneous system,
as well as in the presence of the gate voltage. Relation between conductance
and the effective gap in the system is investigated. We show that $G$ can
reproduce the topological phase diagram in magnetic field vs. gate voltage
space of parameters.
