  Due to their technological importance, point defects in silicon are among the
best studied physical systems. The experimental examination of point defects
buried in bulk is difficult and evidence for the various defects usually
indirect. Simulations of defects in silicon have been performed at various
levels of sophistication ranging from fast force fields to accurate density
functional calculations. The generally accepted viewpoint from all these
studies is that vacancies and self interstitials are the basic point defects in
silicon. We challenge this point of view by presenting density functional
calculations that show that there is a new fourfold coordinated point defect in
silicon that is lower in energy.
