  We report on the fabrication of quantum photonic integrated circuits based on
suspended GaAs membranes. The fabrication process consists of a single
lithographic step followed by inductively-coupled-plasma dry etching through an
electron-beam-resist mask and wet etching of a sacrificial layer. This method
does not require depositing, etching, and stripping a hard mask, greatly
reducing fabrication time and costs, while at the same time yielding devices of
excellent structural quality. We discuss in detail the procedures for cleaning
the resist residues caused by the plasma etching and present a statistical
analysis of the etched feature size after each fabrication step.
