  We calculate transversal flexoelectric coefficients along the principal
directions for fifty select atomic monolayers using ab initio Density
Functional Theory (DFT). Specifically, considering representative materials
from each of Groups IV, III-V, V monolayers, transition metal dichalcogenides
(TMDs), Group III monochalcogenides, Group IV monochalcogenides, transition
metal trichalcogenides (TMTs), and Group V chalcogenides, we perform
symmetry-adapted DFT simulations to calculate the flexoelectric coefficients at
practically relevant bending curvatures. We find that the materials demonstrate
linear behavior and have similar coefficients along both principal directions,
with values for TMTs being up to a factor of five larger than graphene. In
addition, we find electronic origins for the flexoelectric effect, which
increases with monolayer thickness, elastic modulus along bending direction,
and sum of polarizability of constituent atoms.
