  We simulate spin polarized transport of electrons along a silicon nanowire
and along a silicon two dimensional channel. Spin density matrix calculations
are used along with the semi-classical Monte Carlo approach to model spin
evolution along the channel. Spin dephasing in silicon is caused due to Rashba
Spin Orbit Interaction (structural inversion asymmetry) which gives rise to
D'yakonov-Perel' relaxation. Spin relaxation length in a nanowire is found to
be an order of magnitude higher than that in a 2-D channel. The effect of
driving electric field on spin relaxation is also investigated. These results
obtained are essential for design of spintronics based devices.
