  Harnessing parity-time (PT) symmetry with balanced gain and loss profiles has
created a variety of opportunities in electronics from wireless energy transfer
to telemetry sensing and topological defect engineering. However, existing
implementations often employ ad-hoc approaches at low operating frequencies and
are unable to accommodate large-scale integration. Here, we report a fully
integrated realization of PT-symmetry in a standard complementary
metal-oxide-semiconductor technology. Our work demonstrates salient PT-symmetry
features such as phase transition as well as the ability to manipulate
broadband microwave generation and propagation beyond the limitations
encountered by exiting schemes. The system shows 2.1 times bandwidth and 30
percentage noise reduction compared to conventional microwave generation in
oscillatory mode and displays large non-reciprocal microwave transport from
2.75 to 3.10 gigahertz in non-oscillatory mode due to enhanced nonlinearities.
This approach could enrich integrated circuit (IC) design methodology beyond
well-established performance limits and enable the use of scalable IC
technology to study topological effects in high-dimensional non-Hermitian
systems.
