  We report \emph{ab initio} predictions on the proper multiferroic
(ferromagnetic, insulating and ferroelectric) character of PbTiO$_{3}$ doped
with vanadium. V impurities coupled ferromagnetically carry a magnetization of
1 $\mu_{\rm B}$ each. The coupling is expected to be strong, since the
paramagnetic solution is higher by 150 meV/vanadium, and no stable
antiferromagnetic solution was found. The electronic gap in the doped system is
about 0.2-0.3 eV in GGA, hence the system is properly multiferroic. V doping
increases the spontaneous polarization in PbTiO$_{3}$, with an approximate
percentual rate of 0.7 $\mu$C/cm$^{2}$.
