  In long-wavelength moir\'e superlattices of stacked transition metal
dichalcogenides (TMDs), structural reconstruction ubiquitously occurs, which
has reported to impact significantly their electronic properties. However,
complete microscopic understandings of the interplay between the lattice
reconstruction and alteration of electronic properties, and their further
response to external perturbations in the reconstructed TMDs moir\'e
superlattice are still lacking. Here, using scanning tunneling microscopy (STM)
and scanning tunneling spectroscopy (STS) combined with first-principles
calculation, we study the strain-dependent structural reconstruction and its
correlated electronic reconstruction in long-wavelength H-type WS$_{2}$ moir\'e
superlattice at nanometer scale. We observe that the long-wavelength WS$_{2}$
moir\'e superlattices experiencing strong atomic reconstruction transform into
a hexagonal array of screw dislocations separating large-sized H-stacked
domains. Both the geometry and the moir\'e wavelength of the moir\'e
superlattice are dramatically tuned by external intralayer heterostrain in our
experiment. Remarkably, the STS measurements further demonstrate that the
location of the K point in conduction band is modulated sensitively by
strain-induced lattice deformation at nanometer scale in this system, with the
maximum energy shift reaching up to 300 meV. Our results highlight that
intralayer strain plays a vital role in determining structural and electronic
properties in TMD moir\'e superlattice.
