  Layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling
between Berry curvature and layer degree of freedom, is of importance for both
fundamental physics and device applications. Nonetheless, the current research
paradigm is rooted in topological systems, rendering such phenomenon rather
scarce. Here, through model analysis, we propose an alternative, but general
mechanism to realize the LP-AHE in valleytronic van der Waals bilayers by
interlayer sliding. The interaction between the out-of-plane ferroelectricity
and A-type antiferromagnetism gives rise to the layer-locked Berry curvature
and thus the long-sought LP-AHE in the bilayer systems. The LP-AHE can be
strongly coupled with sliding ferroelectricity, to enable ferroelectrically
controllable and reversible. The mechanism is demonstrated in a series of real
valleytronic materials, including bilayer VSi2P4, VSi2N4, FeCl2, RuBr2 and
VClBr. The new mechanism and phenomena provide a significant new direction to
realize LP-AHE and explore its application in electronics.
