  High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized
by a Bi self-flux method. This compound was revealed to be a hole-dominated
semimetal with a large low-field magnetoresistance up to 240% at 2K in a
magnetic field of 1T. Magneto-transport measurements demonstrated that the
large low-field magnetoresistance effect resulted from the coexistence of
field-induced metal-semiconductor transition and weak-antilocalization effect.
Moreover, Hall measurements indicated that ScPtBi single crystal showed a high
mobility over a wide temperature region even up to room temperature (4050
cm2V-1s-1 at 2K - 2016 cm2V-1s-1 at 300K). These findings not only suggest the
nonmagnetic ScPtBi semimetal a potential material candidate for applications in
high-sensitivity magnetic sensors, but also are of great significance to
comprehensively understand the rare-earth based half-Heusler compounds.
