  We have performed a systematic analysis of the voltage and temperature
dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in
the manganites. We find a strong decrease of the TMR with increasing voltage
and temperature. The decrease of the TMR with increasing voltage scales with an
increase of the inelastic tunneling current due to multi-step inelastic
tunneling via localized defect states in the tunneling barrier. This behavior
can be described within a three-current model for magnetic tunnel junctions
that extends the two-current Julliere model by adding an inelastic,
spin-independent tunneling contribution. Our analysis gives strong evidence
that the observed drastic decrease of the GB-TMR in manganites is caused by an
imperfect tunneling barrier.
