  We have investigated the high-temperature thermoelectric properties of the
layered compound LaO1-xFxBiS2. The electrical resistivity of LaOBiS2 showed an
anomalous behavior; a metal-semiconductor transition was observed around 270 K.
It was found that the value of the electrical resistivity decreased with F
substitution. The Seebeck coefficient decreased with increasing F
concentration. The highest power factor of 1.9 W/cmK2 at 480 C was obtained for
LaOBiS2.
