  Impedance spectroscopy measurements were performed in high quality Vanadium
dioxide (VO2) thin films. This technique allows us investigate the resistive
and capacitive contribution to the dielectric response near the metal-insulator
transition (MIT). A non ideal RC behavior was found in our films from room
temperature up to 334 K. A decrease of the total capacitance was found in this
region, possibly due to interface effects. Above the MIT, the system behaves
like a metal as expected, and a modified equivalent circuit is necessary to
describe the impedance data adequately. Around the MIT, an increase of the
total capacitance is observed.
