  We theoretically consider, comparing with the existing experimental
literature, the electrical conductivity of gated monolayer graphene as a
function of carrier density, temperature, and disorder in order to assess the
prospects of accessing the Dirac point using transport studies in high-quality
suspended graphene. We show that the temperature dependence of graphene
conductivity around the charge neutrality point provides information about how
close the system can approach the Dirac point although competition between
long-range and short-range disorder as well as between diffusive and ballistic
transport may considerably complicate the picture. We also find that acoustic
phonon scattering contribution to the graphene resistivity is always relevant
at the Dirac point in contrast to higher density situations where the acoustic
phonon contribution to the resistivity is strongly suppressed at the low
temperature Bloch-Gr\"{u}neisen regime. We provide detailed numerical results
for temperature and density dependent conductivity for suspended graphene.
