  We present a model of electron transport through a random distribution of
interacting quantum dots embedded in a dielectric matrix to simulate realistic
devices. The method underlying the model depends only on fundamental parameters
of the system and it is based on the Transfer Hamiltonian approach. A set of
non-coherent rate equations can be written and the interaction between the
quantum dots and between the quantum dots and the electrodes are introduced by
transition rates and capacitive couplings. A realistic modelization of the
capacitive couplings, the transmission coefficients, the electron/hole
tunneling currents and the density of states of each quantum dot have been
taken into account. The effects of the local potential are computed within the
self-consistent field regime.
