  The size distribution of self-assembled InAs quantum dots grown on (001) InP
under the Stranski-Krastanow growth mode is controlled using selective
area/chemical beam epitaxy, which allows the formation of quantum dots at
specific locations. As the dimensions of the patterned areas are decreased from
1000 nm down to 50 nm or less, scanning electron microscopy reveals a gradual
increase in the spatial correlation between quantum dots, which leads to the
formation of ordered arrays for dimensions below 200 nm.
