  The need for faster and more miniaturised electronics is challenging
scientists to develop novel forms of electronics based on quantum degrees of
freedom different from electron charge. In this fast-developing field, often
referred to as quantum electronics, the metal-oxide perovskite SrRuO3 can play
an important role thanks to its diverse physical properties, which have been
intensively investigated, mostly for conventional electronics. In addition to
being chemically stable, easy to fabricate with high quality and to grow
epitaxially onto many oxides - these are all desirable properties also for
conventional electronics - SrRuO3 has interesting properties for quantum
electronics like itinerant ferromagnetism and metallic behaviour, strong
correlation between magnetic anisotropy and spin-orbit coupling,
strain-tuneable magnetisation, anomalous Hall and Berry effects. In this
Research Update, after describing the main phenomena emerging from the
interplay between spin, orbital, lattice and topological quantum degrees of
freedom in SrRuO3, we discuss the challenges still open to achieve control over
these phenomena. We then provide our perspectives on the most promising
applications of SrRuO3 for devices for conventional and quantum electronics. We
suggest new device configurations and discuss the materials challenges for
their realisation. For conventional electronics, we single out applications
where SrRuO3 devices can bring competitive advantages over existing ones. For
quantum electronics, we propose devices that can help gain a deeper
understanding of quantum effects in SrRuO3 to exploit them for quantum
technologies. We finally give an outlook about properties of SrRuO3 still
waiting for discovery and applications that may stem from them.
