  YMnO3 thin films were grown on n - type Si substrate by nebulized spray
pyrolysis in Metal - Ferroelectric - Semiconductor (MFS) configuration. The C-V
characteristics of the film in MFS structure exhibit hysteretic behavior
consistent with the polarization charge switching direction, with the memory
window decreasing with increase in temperature. The density of interface states
decreases with the increase in the annealing temperature. Mapping of the
silicon energy band gap with the interface states has been carried out. The
leakage current measured in the accumulation region, is lower in
well-crystallized thin films and obeys a space- charge limited conduction
mechanism. The calculated activation energy from the dc leakage current
characteristics of Arhennius plot reveals that the activation energy correspond
to the oxygen vacancy motion
