  We use the maximally-localized Wannier function method to study bonding
properties in amorphous silicon. This study represents, to our knowledge, the
first application of the Wannier-function analysis to a disordered system. Our
results show that, in the presence of disorder, this method is extremely
helpful in providing an unambiguous picture of the bond distribution. In
particular, defect configurations can be studied and characterized with a novel
degree of accuracy that was not available before.
