  We present the room temperature (RT) near-infrared (NIR) photoluminescence
(PL) properties of Si/Ge nanowire (NW) grown silicon wafers which were treated
by vapor of HF:HNO3 chemical mixture. This treatment activates or enhances the
PL intensity at NIR region ranging from 1000 nm to 1800 nm. The PL consists of
a silicon band-edge emission and a broad composite band which was centered at
around 1400-1600 nm. The treatment modifies the wafer surface particularly at
defect sites particularly pits around NWs and NW surfaces by etching and
oxidation of Si and Ge. This process can induce spatial confinement of carriers
where band-to-band (BB) emission is the dominant property in Si capped strained
Si/Ge NW grown wafers. Strong signals were observed at sub-band gap energies in
Ge capped Si/Ge NW grown wafers. It was found that NIR PL is a competitive
property between the Si BB transition and deep-level emission which is mainly
attributable to Si related defects, Ge dots and strained Ge layers. The
enhancement in BB and deep-level PL was discussed in terms of strain, oxygen
related defects, dots formation and carrier confinement effects. The results
demonstrate the effectiveness of this method in enhancing and tuning NIR PL
properties for possible applications.
