  In this letter, it is shown that the existing scaling theories for chemically
doped transistors cannot be applied to the novel class of electrically doped 2D
transistors and the concept of equivalent oxide thickness (EOT) is not
applicable anymore. Hence, a novel scaling theory is developed based on
analytic solutions of the 2D Poisson equation. Full band atomistic quantum
transport simulations verify the theory and show that the critical design
parameters are the physical oxide thickness and distance between the gates.
Accordingly, the most optimized electrically doped devices are those with the
smallest spacing between the gates and the thinnest oxide, and not the smallest
EOT.
