  We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy
technique on vicinal GaAs(111)A substrates. The small miscut angle, while
maintaining the symmetries imposed to the quantum dot from the surface, allows
fast growth rate thanks to the presence of preferential nucleation sites at the
step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already
almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3
{\mu}m telecom O-band with the fine structure splitting as low as 16 {\mu}eV,
thus making them suitable as photon sources in quantum communication networks
using entangled photons.
