  We show that the density of indium islands on GaAs(111)A substrates have a
non-monotonic, reentrant behavior as a function of the indium deposition
temperature. The expected increase in the density with decreasing temperature,
indeed, is observed only down to 160 {\deg}C, where the indium islands
undertake the expected liquid-to-solid phase transition. Further decreasing the
temperature causes a sizeable reduction of the island density. An additional,
reentrant increasing behavior is observed below 80 {\deg}C. We attribute the
above complex behavior to the liquid-solid phase transition and to the complex
island-island interaction which takes place between crystalline islands in the
presence of strain. Indium solid islands grown at temperatures below 160
{\deg}C have a face-centered cubic crystal structure.
