  Antiferromagnetic spintronics allows us to explore storing and processing
information in magnetic crystals with vanishing magnetization. In this
manuscript, we investigate magnetoresistance effects in antiferromagnetic
CuMnAs upon switching into high-resistive states using electrical pulses. By
employing magnetic field sweeps up to 14 T and magnetic field pulses up to
$\sim$ 60 T, we reveal hysteretic phenomena and changes in the
magnetoresistance, as well as the resilience of the switching signal in CuMnAs
to the high magnetic field. These properties of the switched state are
discussed in the context of recent studies of antiferromagnetic textures in
CuMnAs.
