  Van der Waals heterostructures usually formed using atomic thin transition
metal dichalcogenides (TMDCs) with a direct bandgap in the near-infrared to the
visible range are promising candidates for low-dimensional optoelectronic
applications. The interlayer interaction or coupling between two-dimensional
(2D) layer and the substrate or between adjacent 2D layers plays an important
role in modifying properties of the individual 2D material or device
performances through Coulomb interaction or forming interlayer excitons. Here,
we report the realization of quasi zero-dimensional (0D) photon emission of WS2
in a coupled hybrid structure of monolayer WS2 and InGaN quantum dots (QDs). An
interfacial bound exciton, i.e., coupling between excitons in WS2 and the
electrons in QDs has been identified. The emission of this interfacial bound
exciton inherits the 0-D confinement of QDs as well as the spin-valley physics
of excitons in monolayer WS2. The effective coupling between 2D materials and
conventional semiconductors observed in this work provides an effective way to
realize 0D emission of 2D materials and opens the potential of compact on-chip
integration of valleytronics and conventional electronics/optoelectronics.
