  The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) are
observed in a Cr2O3/Ta structure. The structural and surface morphology of
Cr2O3/Ta bilayers have been investigated. Temperature dependence of
longitudinal and transverse resistances measurements confirm the relationship
between SMR and AHE signals in Cr2O3/Ta structure. By means of temperature
dependent magnetoresistance measurements, the physical origin of SMR in the
Cr2O3/Ta structure is revealed, and the contribution to the SMR from the spin
current generated by AHE has been proved. The so-called boundary magnetization
due to the bulk antiferromagnetic order in Cr2O3 film may be responsible for
the relationship of SMR and AHE in the Cr2O3/Ta bilayer.
