  In this paper, we present models of Ge-Se glasses heavily doped with Ag
obtained from {\it ab initio} simulation and study the dynamics of the network
with an emphasis on the motion of Ag$^+$ ions. The models are analyzed with
partial pair correlation functions, static structure factors and novel wavelet
techniques. The electronic properties are characterized by the electronic
density of states and analysis of specific electronic eigenstates. As Ag
content increases, the optical band gap increases. Ag diffusion is observed
directly from thermal simulation. The most diffusive Ag$^+$ ions move
preferentially through low density regions of the network and the existence of
well-defined trapping centers is confirmed. Preliminary information about
temperature dependence of trapping and release is provided.
