  Topological materials are expected to show distinct transport signatures due
to their unique band-inversion character and band-crossing points. However, the
intentional modulation of such topological responses by experimentally feasible
means is less explored. Here, an unusual elevation of anomalous Hall effect
(AHE) is obtained in electron(Ni)-doped magnetic Weyl semimetal Co3-xNixSn2S2,
showing peak values of anomalous Hall-conductivity, Hall-angle and Hall-factor
at a relatively low doping level of x = 0.11. The separation of intrinsic and
extrinsic contributions to total AHE using TYJ scaling model indicates that
such significant enhancement is dominated by the intrinsic mechanism of
electronic Berry curvature. Theoretical calculations reveal that compared with
the Fermi-level shifting from electron filling, a usually overlooked effect of
doping, i.e., local disorder, imposes a striking effect on broadening the bands
and narrowing the inverted gap, and thus results in an elevation of the
integrated Berry curvature. Our results not only realize the enhancement of AHE
in a magnetic Weyl semimetal, but also provide a practical design principle to
modulate the bands and transport properties in topological materials, by
exploiting the disorder effect of doping.
