  Two-dimensional (2D) transition metal dichalcogenides (TMDs) have a range of
unique physics properties and could be used in the development of electronics,
photonics, spintronics and quantum computing devices. The mechanical
exfoliation technique of micro-size TMD flakes has attracted particular
interest due to its simplicity and cost effectiveness. However, for most
applications, large area and high quality films are preferred. Furthermore,
when the thickness of crystalline films is down to the 2D limit (monolayer),
exotic properties can be expected due to the quantum confinement and symmetry
breaking. In this paper, we have successfully prepared macro-size atomically
flat monolayer NbSe2 films on bilayer graphene terminated surface of
6H-SiC(0001) substrates by molecular beam epitaxy (MBE) method. The films
exhibit an onset superconducting critical transition temperature above 6 K, 2
times higher than that of mechanical exfoliated NbSe2 flakes. Simultaneously,
the transport measurements at high magnetic fields reveal that the parallel
characteristic field Bc// is at least 4.5 times higher than the paramagnetic
limiting field, consistent with Zeeman-protected Ising superconductivity
mechanism. Besides, by ultralow temperature electrical transport measurements,
the monolayer NbSe2 film shows the signature of quantum Griffiths singularity
when approaching the zero-temperature quantum critical point.
