  We study the performance of a hybrid Graphene-Boron Nitride {GNR-BN} armchair
nanoribbon {a-GNR-BN} MOSFET at its ballistic transport limit. We consider
three geometric configurations 3p, 3p+1 and 3p+2 of a-GNR-BN with BN atoms
embedded on both sides {2, 4 and 6 BN on each side} on the GNR. The material
properties like band gap, effective mass and density of states of these
H-passivated structures have been evaluated using the Density Functional Theory
{DFT}. Using these material parameters, self-consistent Poisson-Schrodinger
simulations are carried out under the Non Equilibrium Greens Function {NEGF}
formalism to calculate the ballistic MOSFET device characteristics. For a
hybrid nanoribbon of width ~ 5 nm, the simulated ON current is found to be in
the range 276 uA - 291 uA with an ON/OFF ratio 7.1 x 10^6 - 7.4 x 10^6 for a
VDD = 0.68 V corresponds to 10 nm technology node. We further study the impact
of randomly distributed Stone Wales {SW} defects in these hybrid structures and
only 2.52% degradation of ON current is observed for SW defect density of
6.35%.
