  In this paper, the recent advances of our studies on hot carrier degradation
(HCD) are presented from trap-based approach. The microscopic speculation of
interface trap generation is carried out by time-dependent DFT (TDDFT)
simulation in "real-time". Two types of oxide traps contributing to HCD are
identified from experiments. Combining the contributions of interface and oxide
traps, a unified compact model has been proposed which can accurately predict
hot carrier degradation and variation in full Vgs/Vds bias. The trap locations,
degradation contributions and temperature dependence are studied in detail. In
addition, the mixed mode reliability of HCD-BTI coupling through self-heating
and under off-state stress are discussed.
