  A graphene antidot lattice, created by a regular perforation of a graphene
sheet, can exhibit a considerable band gap required by many electronics
devices. However, deviations from perfect periodicity are always present in
real experimental setups and can destroy the band gap. Our numerical
simulations, using an efficient linear-scaling quantum transport simulation
method implemented on graphics processing units, show that disorder that
destroys the band gap can give rise to a transport gap caused by Anderson
localization. The size of the defect induced transport gap is found to be
proportional to the radius of the antidots and inversely proportional to the
square of the lattice periodicity. Furthermore, randomness in the positions of
the antidots is found to be more detrimental than randomness in the antidot
radius. The charge carrier mobilities are found to be very small compared to
values found in pristine graphene, in accordance with recent experiments.
