  We have used the results of micromagnetic simulations to investigate the
effects of nanowire geometry and domain wall magnetization structure on the
characteristic parameters of magnetic atom traps formed by domain walls in
planar ferromagnetic nanowires. It is found that when traps are formed in the
near-field of a domain wall both nanowire geometry and wall structure have a
substantial effect on trap frequency and adiabaticity. We also show that in
certain regimes a trap's depth depends only on the amplitude of an externally
applied rotating magnetic field, thus allowing it to be tuned independently of
the trap's other critical parameters.
