  We report the optical, electrical, and structural properties of Si doped
$\beta$-Ga$_2$O$_3$ films grown on (010)-oriented $\beta$-Ga$_2$O$_3$ substrate
via HVPE. Our results show that, despite growth rates that are more than one
order of magnitude faster than MOCVD, films with mobility values of up to 95
cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$
cm$^{-3}$ can be achieved using this technique, with all Si-doped samples
showing n-type behavior with carrier concentrations in the range of 10$^{17}$
to 10$^{19}$ cm$^{-3}$. All samples showed similar room temperature
photoluminescence, with only the samples with the lowest carrier concentration
showing the presence of a blue luminescence, and the Raman spectra exhibiting
only phonon modes that belong to $\beta$-Ga$_2$O$_3$, indicating that the
Ga$_2$O$_3$ films are phase pure and of high crystal quality. We further
evaluated the epitaxial quality of the films by carrying out grazing incidence
X-ray scattering measurements, which allowed us to discriminate the bulk and
film contributions. Finally, MOS capacitors were fabricated using ALD HfO$_2$
to perform C-V measurements. The carrier concentration and dielectric values
extracted from the C-V characteristics are in good agreement with Hall probe
measurements. These results indicate that HVPE has a strong potential to yield
device-quality $\beta$-Ga$_2$O$_3$ films that can be utilized to develop
vertical devices for high-power electronics applications.
