  We introduce a method of local gating for van der Waals heterostructures,
employing a few-layer graphene patterned bottom gate. Being a member of the 2D
material family, few-layer graphene adapts perfectly to the commonly used
stacking method. Its versatility regarding patterning as well as its flatness
make it an ideal candidate for experiments on locally gated 2D materials.
Moreover, in combination with ultra-thin hexagonal boron nitride as an
insulating layer, sharp potential steps can be created and the quality of the
investigated 2D material can be sustained. To underline the good feasibility
and performance, we show results on transport experiments in periodically
modulated graphene- boron nitride heterostructures, where the charge carrier
density is tuned via locally acting patterned few layer graphene bottom gates
and a global back gate.
