  The electric field induced quantum phase transition from topological to
conventional insulator has been proposed as the basis of a topological field
effect transistor [1-4]. In this scheme an electric field can switch 'on' the
ballistic flow of charge and spin along dissipationless edges of the
two-dimensional (2D) quantum spin Hall insulator [5-9], and when 'off' is a
conventional insulator with no conductive channels. Such as topological
transistor is promising for low-energy logic circuits [4], which would
necessitate electric field-switched materials with conventional and topological
bandgaps much greater than room temperature, significantly greater than
proposed to date [6-8]. Topological Dirac semimetals(TDS) are promising systems
in which to look for topological field-effect switching, as they lie at the
boundary between conventional and topological phases [3,10-16]. Here we use
scanning probe microscopy/spectroscopy (STM/STS) and angle-resolved
photoelectron spectroscopy (ARPES) to show that mono- and bilayer films of TDS
Na3Bi [3,17] are 2D topological insulators with bulk bandgaps >400 meV in the
absence of electric field. Upon application of electric field by doping with
potassium or by close approach of the STM tip, the bandgap can be completely
closed then re-opened with conventional gap greater than 100 meV. The large
bandgaps in both the conventional and quantum spin Hall phases, much greater
than the thermal energy kT = 25 meV at room temperature, suggest that ultrathin
Na3Bi is suitable for room temperature topological transistor operation.
