  In this study, we employ a first-principles approach to conduct a
comprehensive investigation of the properties of nine common native point
defects in cubic boron nitride. This analysis combines standard semi-local and
dielectric hybrid density-exchange-correlation functional calculations,
encompassing vacancies, interstitials, antisites, and their complexes. Our
findings elucidate the influence of these defects on the structural and
electronic characteristics of cubic boron nitride, such as local structures,
formation energy, magnetism, and the energies of defect states within the band
gap. Notably, we accurately simulate the photoluminescent spectra of cubic
boron nitride induced by these defects, demonstrating excellent agreement with
experimental observations. This outcome indicates that the prominent peaks in
the photoluminescent spectrum at 2.5 and 2.8 eV can be attributed to the
nitrogen to boron antisite (N$_{\rm B}$) and boron interstitial (B$_{\rm i}$)
defects, respectively. Additionally, we investigate the energetic stability of
defects under various charge states, providing valuable references for
benchmarking purposes.
