  Atom specific valence electronic structures at interface are elucidated
successfully using soft x-ray absorption and emission spectroscopy. In order to
demonstrate the versatility of this method, we investigated SiO2/Si interface
as a prototype and directly observed valence electronic states projected at the
particular atoms of the SiO2/Si interface; local electronic structure strongly
depends on the chemical states of each atom. In addition we compared the
experimental results with first-principle calculations, which quantitatively
revealed the interfacial properties in atomic-scale.
