  Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum
information processing. There is strong interest to develop high-quality QEs in
III-nitride semiconductors because of their sophisticated manufacturing driven
by large and growing applications in optoelectronics, high voltage power
transistors, and microwave amplifiers. Here, we report the generation and
direct integration of QEs in an aluminium nitride-based photonic integrated
circuit platform. For individual waveguide-integrated QEs, we measure an
off-chip count rate exceeding $6 \times 10^{4}$ counts per second (cps)
(saturation rate > $8.6 \times 10^{4}$ cps). In an unpatterned thin-film
sample, we measure antibunching with $g^{(2)}(0) \sim 0.05$ and photon count
rates exceeding $8 \times 10^{5}$ cps (saturation rate > $1 \times 10^{6}$
cps). Although spin and detailed optical linewidth measurements are left for
future work, these results already show the potential for high-quality QEs
monolithically integrated in a wide range of III-nitride device technologies
that would enable new quantum device opportunities and industrial scalability.
