  We have shown, both experimentally and theoretically, that the metal-induced
gap states (MIGS) can exist in epitaxially grown organic insulator/metal
interfaces. The experiment is done for alkane/Cu(001) with an element-selective
near edge x-ray absorption fine structure (NEXAFS), which exhibits a pre-peak
indicative of MIGS. An {\it ab initio} electronic structure calculation
supports the existence of the MIGS. When the Cu substrate is replaced with Ni,
an interface magnetism (spin-polarized organic crystal at the interface) is
predicted to be possible with a carrier doping.
