  Resistance of vacuum deposited ${\rm Sb_2Te_3}$ films of thickness between
100-500nm has been measured in vacuum. It is found that the resistance of the
polycrystalline films strongly depends on the grain size and inter-granular
voids. The charge carrier are shown to cross this high resistivity inter-
granular void by ohmic conduction. The barrier height as well as temperature
coefficient of resistance are also shown to depend on the grain size and inter-
grain voids.
