  Inherent low frequency noise is a ubiquitous phenomenon, which limits
operation and performance of electronic devices and circuits. This limiting
factor is very important for nanoscale electronic devices, such as 2D
semiconductor devices. In this work, low frequency noise in high mobility
single crystal MoS2 grown by chemical vapor deposition (CVD) is investigated.
The measured low frequency noise follows an empirical formulation of mobility
fluctuations with Hooge' s parameter ranging between 1.44E-3 and 3.51E-2. Small
variation of Hooge's parameter suggests superior material uniformity and
processing control of CVD grown MoS2 devices than reported single-layer MoS2
FET. The extracted Hooge's parameter is one order of magnitude lower than CVD
grown graphene. The Hooge's parameter shows an inverse relationship with the
field mobility.
