  Self-assembled InAs quantum dots (QDs) are promising optomechanical elements
due to their excellent photonic properties and sensitivity to local strain
fields. Microwave-frequency modulation of photons scattered from these
efficient quantum emitters has been recently demonstrated using surface
acoustic wave (SAW) cavities. However, for optimal performance, a gate
structure is required to deterministically control the charge state and reduce
charge noise of the QDs. Here, we integrate gated QDs and SAW cavities using
molecular beam epitaxy and nanofabrication. We demonstrate that with careful
design of the substrate layer structure, integration of the two systems can be
accomplished while retaining the optimal performance of each subsystem. These
results mark a critical step toward efficient and low-noise optomechanical
systems for microwave-to-optical quantum transduction.
