  We present a theoretical study of a spin field-effect transistor realized in
a quantum well formed in a p--doped ferromagnetic-semiconductor-
nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based
on an envelope-function approach for the hole bands in the various regions of
the transistor, we derive the complete theory of coherent transport through the
device, which includes both heavy- and light-hole subbands, proper modeling of
the mode matching at interfaces, integration over injection angles, Rashba spin
precession, interference effects due to multiple reflections, and gate-voltage
dependences. Numerical results for the device current as a function of
externally tunable parameters are in excellent agreement with approximate
analytical formulae.
