  We propose a novel hybrid single-electron device for reprogrammable low-power
logic operations, the magnetic single-electron transistor (MSET). The device
consists of an aluminium single-electron transistors with a GaMnAs magnetic
back-gate. Changing between different logic gate functions is realized by
reorienting the magnetic moments of the magnetic layer which induce a voltage
shift on the Coulomb blockade oscillations of the MSET. We show that we can
arbitrarily reprogram the function of the device from an n-type SET for
in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane
magnetization orientation. Moreover, we demonstrate a set of reprogrammable
Boolean gates and its logical complement at the single device level. Finally,
we propose two sets of reconfigurable binary gates using combinations of two
MSETs in a pull-down network.
