  Epitaxy of semiconductors is a process of tremendous importance in applied
science and optoelectronic industry. Controlling of defects introduced during
epitaxial growth is a key point in manufacturing devices of high efficiency and
durability. In this work, we demonstrate how useful hybrid reflections are on
the study of epitaxial structures with anisotropic strain gradients due to
patterned substrates. High accuracy to detect and distinguish elastic and
plastic relaxations are one of the greatest advantages of measuring this type
of reflection, as well as the fact that it can be exploited in symmetrical
reflection geometry on a commercial high-resolution diffractometer.
