  The recent discovery of ferroelectric behavior in few-layer materials,
accompanied by the observation of antipolar domains in hexagonal boron nitride
and transition metal dichalcogenide moir\'e bilayers, is paving the way for
revolutionary advancements in the generation and manipulation of intrinsic
electric dipoles through stacking. In addition, these cutting-edge quantum
materials are reshaping our comprehension of phase transitions. Within the
present study, we unveil a hitherto unreported size-dependent sliding behavior
that marks a significant departure from conventional ferroelectrics. We also
shed light on thermally induced spontaneous hyperlubric sliding within moir\'e
bilayers, which can be used as a signal to distinguish topological phase
transitions from an antipolar onto a ferroelectric bilayer. Our findings also
suggest that the (topological) pinning of AA nodes in antipolar moir\'e
homobilayers prevents the occurrence of an antipolar-to-paraelectric
transformation.
