  Platinum diselenide (PtSe2), a novel two-dimensional material from the class
of noble-metal dichalcogenide (NMD), has recently received significant
attention due to its outstanding properties. PtSe2, which undergoes a semi
metallic to semiconductor transition when thinned, offers a band-gap in the
infrared range and good air stability. These properties make it a prime active
material in optoelectronic and chemical sensing devices. However, a synthesis
method that can produce large-scale and reliable high quality PtSe2 is highly
sought after. Here, we present PtSe2 growth by metal organic chemical vapor
deposition. Films were grown on a variety of centimeter scale substrates and
were characterized by Raman, X-ray photoelectron and X-ray diffraction
spectroscopy, as well as scanning tunneling microscopy and spectroscopy.
Domains within the films are found to be up to several hundred nanometers in
size, and atomic scale measurements show their highly ordered crystalline
structure. The thickness of homogenous films can be controlled via the growth
time. This work provides fundamental guidance for the synthesis and
implementation of high quality, large-scale PtSe2 layers, hence offering the
key requirement for the implementation of PtSe2 in future electronic devices.
