  In this study, the method of low-temperature atomic layer deposition (ALD),
which is applied on the soft photo-resist (PR) substrate forming hafnium
dioxide (HfO2) at 40 C to 85 C, is reported for the first time. This reveals
the potential application in the TEM sample preparation. The thickness,
refractive index, band gap, and depth profiling chemical state of the thin film
are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy
respectively. Our TEM image shows a clear boundary between the photo-resist and
hafnium dioxide deposited on PR, which indicates the low-temperature atomic
layer deposition (ALD) may lead a new way for TEM sample preparation in
advanced technology node.
