  The static linearity performance metrics of the GFET transconductor are
studied and modeled. Closed expressions are proposed for second and third order
harmonic distortion (HD2, HD3), second and third order intermodulation
distortion ({\Delta}IM2), {\Delta}IM3), and second and third order intercept
points (AIIP2, AIIP3). The expressions are validated through large-signal
simulations using a GFET VerilogA analytical model and a commercial circuit
simulator. The proposed expressions can be used during circuit design in order
to predict the GFET biasing conditions at which linearity requirements are met.
