  Manipulating the interlayer twist angle is a powerful tool to tailor the
properties of layered two-dimensional crystals. The twist angle has a
determinant impact on these systems' atomistic structure and electronic
properties. This includes the corrugation of individual layers, formation of
stacking domains and other structural elements, and electronic structure
changes due to the atomic reconstruction and superlattice effects. However, how
these properties change with the twist angle (ta) is not yet well understood.
Here, we monitor the change of twisted bilayer MoS2 characteristics as function
of ta. We identify distinct structural regimes, with particular structural and
electronic properties. We employ a hierarchical approach ranging from a
reactive force field through the density-functional-based tight-binding
approach and density-functional theory. To obtain a comprehensive overview, we
analyzed a large number of twisted bilayers with twist angles in the range
0.2-59.6deg. Some systems include up to half a million atoms, making structure
optimization and electronic property calculation challenging. For 13<ta<47, the
structure is well-described by a moir\'e regime composed of two rigidly twisted
monolayers. At small ta (ta<3 and 57<ta), a domain-soliton regime evolves,
where the structure contains large triangular stacking domains, separated by a
network of strain solitons and short-ranged high-energy nodes. The corrugation
of the layers and the emerging superlattice of solitons and stacking domains
affects the electronic structure. Emerging predominant characteristic features
are Dirac cones at K and kagome bands. These features flatten for ta
approaching 0 and 60deg. Our results show at which ta range the characteristic
features of the reconstruction emerge and give rise to exciting electronics. We
expect our findings also to be relevant for other twisted bilayer systems.
