  A model is developed for photoinduced absorption from localized states
observed in femtosecond pump-probe experiments in high-Tc superconductors and
other materials. The dynamics of localized carriers are described in terms of
phenomenological approach similar to that originaly proposed by Rothwarf and
Taylor. Expanding the relaxation rate in powers of the order parameter we have
shown that density of localized carriers is sensitive to Tc. From the analysis
of the experimental data on YBa2Cu3O(7-x) and K0.3MoO3 we conclude that
significant intra-gap density of localized states exists in these materials.
Temperature dependence of the density of photoexcited localized carriers in
underdoped YBa2Cu3O(7-x) and in K0.3MoO3 is consistent with the observation of
the pseudogap above Tc.
