  This study details the creation of a Write Once-Read Many (WORM) memory
device utilizing cuprous chloride (CuCl) and poly(vinylidene
fluoride-co-hexafluoropropylene) (PVDF-HFP) polymers. Employing an in-plane
configuration, a deliberate 1:10 ratio of CuCl to PVDF-HFP has been selected.
This ratio aims to establish an in-situ copper channel within the device. The
electrical response exhibits consistent memory retention over an extended
duration. The WORM characteristics are attributed to the development of
multiple conducting filaments or a highly conductive percolative path created
by Cu ions within the polymer matrix. The UV-Vis study also reinforces the
obtained results. Additionally, the memristor undergoes specific poling and
cooling conditions. The fabrication approach employed in this research yields a
distinctive type of Resistive Switching Device (RSD). Once the device is
activated, it maintains its state even after the applied field is reduced. This
specialized device holds potential applications in Compact Disc-Recordable
(CD-R), Digital Versatile Disc-Recordable (DVD-R), Blu-ray Disc Recordable
(BD-R), and Write Once USB Drives.
