  We report for the first time a large photoresponse in an array of charge
transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a
nanobridge device. The device shows highest photoresponse for excitation with
405 nm light which matches with its absorption peak. The current gain at zero
bias can reach ~104 with an illumination power density of 2x106 W/m2. The zero
bias responsivity is ~0.3 mA/W which increases on applying bias reaching 1.0
A/W or more for a bias of 2.0 Volt. Dark and illuminated I-V data are analyzed
by two back-to-back Schottky diodes model, which shows the predominant
photocurrent in the device arising from the photoconductive response of the
nanowires.
