  We investigate the effect of ellipticity ratio of the polarized radiation
field on optoelectronic properties of a two-dimensional (2D) semi-Dirac (SD)
system. The optical conductivity is calculated within the energy balance
equation approach derived from the semiclassical Boltzmann equation. We find
that there exists the anisotropic optical absorption induced via both the
intra- and interband electronic transition channels in the perpendicular $xx$
and $yy$ directions. Furthermore, we examine the effects of the ellipticity
ratio, the temperature, the carrier density, and the band-gap parameter on the
optical conductivity of the 2D SD system placed in transverse and vertical
directions, respectively. It is shown that the ellipticity ratio, temperature,
carrier density, and band-gap parameter can play the important roles in tuning
the strength, peak position, and shape of the optical conductivity spectrum.
The results obtained from this study indicate that the 2D SD system can be a
promising anisotropic and tunable optical and optoelectronic material for
applications in innovative 2D optical and optoelectronic devices, which are
active in the infrared and terahertz bandwidths.
