  UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized
heating and short timescale high temperature processing, which can be
advantageous to reduce metal line resistance by enlarging metal grains in lines
or in thin films, while maintaining the integrity and performance of
surrounding structures. In this work UV NLA is applied on a typical Cu thin
film, demonstrating a mean grain size of over 1 {\mu}m and 400 nm in a melt and
sub-melt regime, respectively. Along with such grain enlargement, film
resistivity is also reduced.
