  Two-dimensional numerical simulation of switching processes for equivalent
silicon insulated gate bipolar transistors of CSTBT-type and hybrid SITh-MOS
thyristors (HSMT) has been performed. It is shown that the energy of switching
losses during turning on and off periods in HSMT is greater than in totaly
equivalent CSTBT. Therefore, the time-averaged power Pav dissipated in HSMT is
smaller than in equivalent CSTBT only for rather long total current pulse
duration. However, lowering the lifetime of nonequilibrium charge carriers tnp
in the SITh can significantly reduce switching losses of the whole HSMT, while
maintaining its advantage for the static on state. Therefore, for each set of
CSTBT parameters it seams to be possible to select up such tnp in "almost
equivalent" HSMT that the averaged power dissipation in HSMT will be less, than
in equivalent CSTBT, for any set ranges of current pulse amplitude and
duration.
