  Nanostructured materials consist of crystalline and grain boundary
components. In the simplest case, both components are chemically identical.
Here, we present the results of a study of a system consisting of a crystalline
component built by A atoms (tungsten) and a grain boundary component of B atoms
(gallium). Within this system, component B is in a disordered state. Most
likely it exhibits an 'amorphous-like' structure, and coats the tungsten
crystals uniformily with a constant thickness, thus forming a Ga skeleton
structure. The non-crystalline gallium seems to undergo no first order
structural phase transitions, e.g., no first order melting transition was noted
when the composit was below, at or above the equilibrium melting point of Ga.
The properties of gallium as grain boundary component differ significantly from
those of crystalline and amorphous bulk gallium.
