  A ringing free bit addressing scheme for magnetic memories like MRAM
(magnetic random access memory) is proposed. As in standard MRAM addressing
schemes the switching of a selected cell is obtained by the combination of two
half-select field pulses. Numerical solutions of a single spin model of an MRAM
cell show that the pulse parameters can be chosen such that the application of
the half select pulse induces a full precessional turn of the magnetization (no
switch) whereas the superposition of two half select pulses induces a half
precessional turn (switch). With well adapted pulse parameters both fullselect
and half-select switching occurs on ballistic trajectories characterized by the
absence of ringing after magnetic pulse decay. Such ballistic bit addressing
allows ultra high MRAM clock rates. 1
