  The electronic structure of an infinite 1D array of vertically coupled
InAs/GaAs strained quantum dots is calculated using an eight-band
strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum
wire structure in which the miniband widths and effective masses are controlled
by the distance between the islands, d. The miniband structure is calculated as
a function of d, and it is shown that for d>4 nm the miniband is narrower than
the optical phonon energy, while the gap between the first and second minibands
is greater than the optical phonon energy. This leads to decreased optical
phonon scattering, providing improved quantum wire behavior at high
temperatures. These miniband properties are also ideal for Bloch oscillation.
