  Hexagonal boron nitride has already been proven to serve as a decent
substrate for high quality epitaxial growth of several 2D materials, such as
graphene, MoSe$_{\tiny{\textrm{2}}}$, MoS$_{\tiny{\textrm{2}}}$ or
WSe$_{\tiny{\textrm{2}}}$. Here, we present for the first time the molecular
beam epitaxy growth of MoTe$_{\tiny{\textrm{2}}}$ on atomically smooth
hexagonal boron nitride (hBN) substrate. Occurrence of
MoTe$_{\tiny{\textrm{2}}}$ in various crystalline phases such as distorted
octahedral 1T' phase with semimetal properties or hexagonal 2H phase with
semiconducting properties opens a possibility of realisation of crystal-phase
homostructures with tunable properties. Atomic force microscopy studies of
MoTe$_{\tiny{\textrm{2}}}$ grown in a single monolayer regime enable us to
determine surface morphology as a function of the growth conditions. The
diffusion constant of MoTe$_{\tiny{\textrm{2}}}$ grown on hBN can be altered 5
times by annealing after the growth, reaching about 5 $\cdot$ 10$^{-6}$
cm$^{2}$/s. Raman spectroscopy results suggest a coexistence of both 2H and 1T'
MoTe$_{\tiny{\textrm{2}}}$ phases in the studied samples.
