  We propose and study theoretically a new mechanism of electron-impurity
scattering in doped seminconductors with large dielectric constant. It is based
upon the idea of \textit{vector} character of deformations caused in the
crystalline lattice by any point defects siting asymmetrically in the unit
cell. In result, local lattice compression due to the elastic deformations
decay as $1/r^2$ with distance from impurity. Electron scattering (due to
standard deformation potential) on such defects leads to low-temperature
mobility $\mu(n)$ scaling with electron density $n$ of the form $\mu(n) \propto
n^{-2/3}$ that is close to experimental observations on a number of relevant
materials.
