  In this work, we have theoretically investigated the intermixing effect in
highly strained In$_{0.3}$Ga$_{0.7}$As/GaAs quantum well (QW) taking into
consideration the composition profile change resulting from in-situ indium
surface segregation. To study the impact of the segregation effects on the
postgrowth intermixing, one dimensional steady state Schrodinger equation and
Fick's second law of diffusion have been numerically solved by using the finite
difference methods. The impact of the In/Ga interdiffusion on the QW emission
energy is considered for different In segregation coefficients. Our results
show that the intermixed QW emission energy is strongly dependent on the
segregation effects. The interdiffusion enhanced energy shift is found to be
considerably reduced for higher segregation coefficients. This work adds a
considerable insight into the understanding and modelling of the effects of
interdiffusion in semiconductor nanostructures.
