  Smart material implication (SIMPLY) logic has been recently proposed for the
design of energy-efficient Logic-in-Memory (LIM) architectures based on
non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a
comparator to the conventional IMPLY scheme. This allows performing a
preliminary READ operation and hence the SET operation only in the case it is
actually required. This work explores the SIMPLY logic scheme using nanoscale
spin-transfer torque magnetic tunnel junction (STT-MTJ) devices. The
performance of the STT-MTJ based SIMPLY architecture is analyzed by varying the
load resistor and applied voltages to implement both READ and SET operations,
while also investigating the effect of temperature on circuit operation.
Obtained results show an existing tradeoff between error rate and energy
consumption, which can be effectively managed by properly setting the values of
load resistor and applied voltages. In addition, our analysis proves that
tracking the temperature dependence of the MTJ properties through a
proportional to absolute temperature (PTAT) reference voltage at the input of
the comparator is beneficial to mitigate the reliability degradation under
temperature variations.
