  We characterize nanostructures of Bi2Se3 that are grown via metalorganic
chemical vapor deposition using the precursors diethyl selenium and trimethyl
bismuth. By adjusting growth parameters, we obtain either single-crystalline
ribbons up to 10 microns long or thin micron-sized platelets. Four-terminal
resistance measurements yield a sample resistivity of 4 mOhm-cm. We observe
weak anti-localization and extract a phase coherence length l_phi = 178 nm and
spin-orbit length l_so = 93 nm at T = 0.29 K. Our results are consistent with
previous measurements on exfoliated samples and samples grown via physical
vapor deposition.
