  We present experimental results on second-harmonic generation in
non-stoichiometric, silicon-rich nitride (SRN) films. The as-deposited film
presents a second-order nonlinear coefficient, or \c{hi}(2), as high as 8pm/V.
This value can be widely tuned using the electric field induced second harmonic
effect (EFISH), and a maximum value of 22.7pm/V was achieved with this
technique. We further illustrate that the second-order nonlinear coefficient
exhibited by these films can be highly dispersive in nature, and requires
further study and analysis to evaluate their viability for in-waveguide
applications at telecommunication wavelengths.
