  We survey the electrical transport properties of the single-crystalline,
topological chiral semimetal CoSi which was grown via different methods.
High-quality CoSi single crystals were found in the growth from tellurium
solution. The sample's high carrier mobility enables us to observe, for the
first time, quantum oscillations (QOs) in its thermoelectrical signals. Our
analysis of QOs reveals two spherical Fermi surfaces around the R point in the
Brillouin zone corner. The extracted Berry phases of these electron orbits are
consistent with the -2 chiral charge as reported in DFT calculations. Detailed
analysis on the QOs reveals that the spin-orbit coupling induced band-splitting
is less than 2 meV near the Fermi level, one order of magnitude smaller than
our DFT calculation result. We also report the phonon-drag induced large Nernst
effect in CoSi at intermediate temperatures.
