  New structure data for the high-temperature diluted magnetic semiconductor
Si:Mn, synthesized by laser method are presented. The higher resolution
transmission electron microscopy and diffraction was applied in two crystal
directions of epitaxial layers of DMS Si:Mn with elimination of the
contribution from GaAs substrate and interface. It is established, that the DMS
Si:Mn can be represent as compound with variable composition Si2+xMn1-x (0 <x
<1), single-phase diamond like structure, high crystal perfection and the
self-organized formation of the super-lattice structures with the period equal
to triple the distance between the nearest (110) atomic layers and interval
between (110) layers which are doped by Mn atoms and orientated along the
direction of Si:Mn film growth. The Si with 15 percent of Mn (or Si2.5Mn0.5)
films consist of blocks with the 15-50 nm sizes and with mutually perpendicular
orientations of the super-lattice modulations. Atoms of manganese in the (110)
layers, doped by these impurity, settle down in the form of strips of an
one-atom thickness. These manganese strips in the given (110) layer alternate
occupy about half of area of the layer (110) in the full consent with the
spectral X-ray analysis and ferromagnetic resonance data.
