  Transient currents in atomically thin MoTe$_2$ field-effect transistor are
measured during cycles of pulses through the gate electrode. The transients are
analyzed in light of a newly proposed model for charge trapping dynamics that
renders a time-dependent change in threshold voltage the dominant effect on the
channel hysteretic behavior over emission currents from the charge traps. The
proposed model is expected to be instrumental in understanding the fundamental
physics that governs the performance of atomically thin FETs and is applicable
to the entire class of atomically thin-based devices. Hence, the model is vital
to the intelligent design of fast and highly efficient opto-electronic devices.
