  We report here the first RF noise measurements on two designs of n-doped
GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a
room-temperature negative differential resistance (NDR) and also strong near-UV
light emission. The measurements are made with a standard, un-isolated RF
receiver and calibration is made using a substitution-resistor/hot-cold
radiometric technique which works in the positive differential resistance (PDR)
region but not the NDR region. A high-quality InGaAs/AlAs double-barrier RTD is
used as a control sample and displays shot noise suppression down to
$\Gamma\approx$0.5 in the PDR region, as expected. The GaN/AlN RTDs display
both shot-noise enhancement and suppression in the PDR regions, but no obvious
sign of sudden shot-noise enhancement in the threshold bias region of light
emission. This supports the hypothesis that the holes required for light
emission are created by electronic (Zener) interband tunneling, not impact
ionization. Further the minimum shot-noise factor of $\Gamma\sim$ 0.34 suggests
that the GaN/AlN RTDs are acting like triple-barrier devices.
