  The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x}
(x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of
the edge photoluminescence (PL) intensity by more than a factor of 3 when
either the polarization of the exciting light is changed from circular to
linear or the transverse magnetic field of ~300 gauss (G) is applied. The
interband absorption of the circularly polarized light results in a spin
polarization of conduction electrons, which reaches 35% with increasing the
pump intensity. The effects observed are explained by dynamical polarization of
deep paramagnetic centers and spin-dependent capture of conduction electrons by
these centers. The PL depolarization in a transverse magnetic field (Hanle
effect) allows us to estimate the electron spin relaxation time in the range of
1 ns. Theoretically, it has been concluded that, due to the SDR, this long time
is controlled by slow spin relaxation of bound electrons. In all the three
alloy samples, a positive sign of the bound-electron g-factor is determined
experimentally from the direction of their mean spin rotation in the magnetic
field.
