  Using a high energy electron beam for the imaging of high density matter with
both high spatial-temporal and areal density resolution under extreme states of
temperature and pressure is one of the critical challenges in high energy
density physics . When a charged particle beam passes through an opaque target,
the beam will be scattered with a distribution that depends on the thickness of
the material. By collecting the scattered beam either near or off axis,
so-called bright field or dark field images can be obtained. Here we report on
an electron radiography experiment using 45 MeV electrons from an S-band
photo-injector, where scattered electrons, after interacting with a sample, are
collected and imaged by a quadrupole imaging system. We achieved a few
micrometers (about 4 micrometers) spatial resolution and about 10 micrometers
thickness resolution for a silicon target of 300-600 micron thickness. With
addition of dark field images that are captured by selecting electrons with
large scattering angle, we show that more useful information in determining
external details such as outlines, boundaries and defects can be obtained.
