  The conventional single-particle Monte Carlo simulation of charge transport
in disordered media is based on the truncated density of localized states
(DOLS) which benefits from very short time execution. Although this model
successfully clarifies the properties of electron transport in moderately
disordered media, it overestimates the electron diffusion coefficient for
strongly disordered media. The origin of this deviation is discussed in terms
of zero-temperature approximation in the truncated DOLS and the ignorance of
spatial occupation of localized states. Here, based on the multiple-trapping
regime we introduce a modified single-particle kinetic Monte Carlo model that
can be used to investigate the electron transport in any disordered media
independent from the value of disorder parameter. In the proposed model,
instead of using a truncated DOLS we imply the raw DOLS. In addition, we have
introduced an occupation index for localized states to consider the effect of
spatial occupation of trap sites. The proposed model is justified in a simple
cubic lattice of trap sites for broad interval of disorder parameters, Fermi
levels, and temperatures.
