  The Hall resistivity rho_{xy} of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal
has been measured as a function of temperature and field. The overall behavior
is similar to that observed previously in thin-films. At 5 K, rho_{xy} is
positive and linear in field, indicating that the anomalous contribution $R_S$
is negligible. However, the effective carrier density in a free electron model
is n_{eff}=2.4 holes/Mn, even larger than the 0.85-1.9 holes/Mn reported for
thin-films and far larger than the 0.33 holes/Mn expected from the doping
level. As temperature increases, a strong, negative contribution to rho_{xy}
appears, that we ascribe to R_S. Using detailed magnetization data, we separate
the ordinary (\propto B) and anomalous (\propto M) contributions. Below T_C,
R_S \propto rho_{xx}, indicating that magnetic skew scattering is the dominant
mechanism in the metallic ferromagnetic regime. At and above the
resistivity-peak temperature, we find that rho_{xy}/rho_{xx}M is a constant,
independent of temperature and field. This implies that the anomalous Hall
coefficient is proportional to the magnetoresistance. A different explanation
based on two fluid model is also presented.
