  The ZnO films, 25 nm thick were deposited by e-beam evaporation of ZnO
(99.9%) pellets onto native oxide covered silicon (100) substrates. Details of
the interface chemical composition and the chemical depth profile have been
deduced as follows: Adsorbed OH surface/OH: ZnO Interface/Pure ZnO thin
film/ZnO:H: Si Interface/H:SiO2/SiO2/Si(100). The physical profile of the
crater formed by the SIMS depth profiling was measured with a Tencor P-2
profilometer as depth profiling showed uniform ion milling and good consistency
with film thickness (25 nm) measured by SIMS depth profile (25.4 nm).
