  We utilize a focused beam of Ga+ ions to define magnetization pinning sites
in a ferromagnetic epilayer of (Ga,Mn)As. The nonmagnetic defects locally
increase the magneto-crystalline anisotropy energies, by which a domain wall is
pinned at a given position. We demonstrate techniques for manipulating domain
walls at these pinning sites as probed with the giant planar Hall effect
(GPHE). By varying the magnetic field angle relative to the crystal axes, an
upper limit is placed on the local effective anisotropy energy.
