  Excitons in transition metal dichalcogenides (TMDs) have emerged as a
promising platform for novel applications ranging from optoelectronic devices
to quantum optics and solid state quantum simulators. While much progress has
been made towards characterizing and controlling excitons in TMDs, manipulating
their properties during the course of their lifetime - a key requirement for
many optoelectronic device and information processing modalities - remains an
outstanding challenge. Here we combine long-lived interlayer excitons in
angle-aligned MoSe$_2$/WSe$_2$ heterostructures with fast electrical control to
realize dynamical control schemes, in which exciton properties are not
predetermined at the time of excitation but can be dynamically manipulated
during their lifetime. Leveraging the out-of-plane exciton dipole moment, we
use electric fields to demonstrate dynamical control over the exciton emission
wavelength. Moreover, employing a patterned gate geometry, we demonstrate rapid
local sample doping and toggling of the radiative decay rate through
exciton-charge interactions during the exciton lifetime. Spatially mapping the
exciton response reveals charge redistribution, offering a novel probe of
electronic transport in twisted TMD heterostructures. Our results establish the
feasibility of dynamical exciton control schemes, unlocking new directions for
exciton-based information processing and optoelectronic devices, and the
realization of excitonic phenomena in TMDs.
