  High-quality thin films of the ferromagnetic-insulator europium(II) sulfide
(EuS) were fabricated by pulsed laser deposition on Al2O3 (0001) and Si (100)
substrates. A single orientation was obtained with the [100] planes parallel to
the substrates, with atomic-scale smoothness indicates a near-ideal surface
topography. The films exhibit uniform ferromagnetism below 15.9 K, with a
substantial component of the magnetization perpendicular to the plane of the
films. Optimization of the growth condition also yielded truly insulating films
with immeasurably large resistance. This combination of magnetic and electric
properties open the gate for novel devices that require a true ferromagnetic
insulator.
