  The fundamental property of most single-electron devices with quasicontinuous
quasiparticle spectrum on the island is the periodicity of their transport
characteristics in the gate voltage. This property is robust even with respect
to placing the ferroelectric insulators in the source and drain tunnel
junctions. We show that placing the ferroelectric inside the gate capacitance
breaks this periodicity. The current-voltage characteristics of this SET
strongly depends on the ferroelectric polarization and shows the giant
memory-effect even for negligible ferroelectric hysteresis making this device
promising for memory applications.
