  We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples
consisting of a single ferromagnetic (FM) layer grown epitaxially on the
$\mathit{n-}$GaAs (001) surface. The FMR peak is detected as an interfacial
voltage with a symmetric line shape and is present in samples based on various
FM/$n$-GaAs hetrostructures, including Co$_{2}$MnSi/$n$-GaAs,
Co$_{2}$FeSi/$n$-GaAs and Fe/$n$-GaAs. We show that the interface bias voltage
dependence of the FMR signal is identical to that of the tunneling anisotropic
magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how
the precessing magnetization yields a dc FMR signal through the TAMR effect and
how the TAMR phenomenon can be used to predict the angular dependence of the
FMR signal. This TAMR-induced FMR peak can be observed under conditions where
no spin accumulation is present and no spin-polarized current flows in the
semiconductor.
