  We demonstrate single electron-hole pair resolution in a single-sided,
contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a
baseline energy resolution of 3 eV. This crystal can be operated at voltages in
excess of $\pm50$ V, resulting in a measured charge resolution of 0.06
electron-hole pairs. The high aluminum coverage ($\sim$70%) of this device
allows for the discrimination of surface events and separation of events
occurring near the center of the detector from those near the edge. We use this
discrimination ability to show that non-quantized dark events seen in previous
detectors of a similar design are likely dominated by charge leakage along the
side wall of the device.
