  The results of chaos simulations in Josephson Fluxonic Diode (JFD) subject to
the magnetic field, rf driving and dc biasing currents in the RCSJ model are
reported. The dynamic behavior of this nonlinear device is mapped as a function
of loss, bias, frequency and amplitude of rf excitation which leads to find
sustainable fluxon oscillation regions in microwave application. As a result,
chaos does not happen if either the dc bias or the rf excitation is below
specific value, but the loss term can change this state without affected by rf
frequency. An attempt is made to explain the boundaries of the chaotic region
in terms of parameter maps.
