  The paper presents results for zinc oxide films grown at low temperature
regime by Atomic Layer Deposition (ALD). We discuss electrical properties of
such films and show that low temperature deposition results in oxygen-rich ZnO
layers in which free carrier concentration is very low. For optimized ALD
process it can reach the level of 10^15 cm-3, while mobility of electrons is
between 20 and 50 cm2/Vs. Electrical parameters of ZnO films deposited by ALD
at low temperature regime are appropriate for constructing of the ZnO-based p-n
and Schottky junctions. We demonstrate that such junctions are characterized by
the rectification ratio high enough to fulfill requirements of 3D memories and
are deposited at temperature 100degC which makes them appropriate for
deposition on organic substrates.
