  We investigated the interdependence of the effects of disorder and carrier
correlations on the metal-insulator transition in two-dimensional electronic
systems. We present a quantitative metal-insulator phase diagram. Depending on
the carrier density we find two different types of metal-insulator transition -
a continuous localization for rs=<8 and a discontinuous transition at higher
rs. The critical level of disorder at the transition decreases with decreasing
carrier density. At very low carrier densities we find that the system is
always insulating. The value of the conductivity at the transition is
consistent with recent experimental measurements. The self-consistent method
which we have developed includes the effects of both disorder and correlations
on the transition, using a density relaxation theory with the Coulomb
correlations determined from numerical simulation data.
