  The synthesis of embedded silicon carbide was carried out in N type silicon
samples having (100) and (111) orientations using high dose implantation of
carbon ions at room temperature. The variation of dose was employed to get dose
dependence of silicon carbide formation. Postimplant annealing at 1000 C in
order to anneal out the implantion induced defects and to get silicon carbide
precipitates in silicon matrix. Detailed Fourier tarnsform infrared
spectroscopy analysis and x-ray diffraction studies confirms the formation of
cubic phase of silicon carbide. The grain size of the silicon carbide
precipitates is estimated to a few nano meters. The silicon carbide
precipitates have been found to exhibit a better crystalline order in silicon
(100) samples than in silicon (111) samples.The x-ray diffraction results also
indicate the amorphization of bombarded region of the silicon samples. After
annealing the amorphized region got recrystalized into a polycrystalline phase
of silicon.
