  We have investigated the electrostatics and electronic transport of the gate
tunable 2D pn junction by implementing a comprehensive physics-based simulator
that self-consistently solves the 2D Poisson's equation coupled to the
drift-diffusion current and continuity equations. The simulator considers the
strong influence of the out-of-plane electric field through the gate dielectric
and the presence of interface states. The impact of parameters such as gate
capacitance, energy gap and interface trap states density have been considered
to model properties such as the depletion width, rectification factor and
depletion and diffusion capacitances. The present work opens the door to a
wider exploration of potential advantages that gate tunable 2D pn junctions
could bring in terms of figures of merit.
