  The ground state energy of exciton bound by distant ionized donor impurity in
two-dimensional semiconductor quantum well (QW) is studied theoretically within
the Hartree approach in the effective mass approximation. The influence of the
distance between QW plane and ionized donor, as well as of the electron-hole
mass ratio, the magnetic field aligned across the QW plane and dielectric
constant of the barrier material on the stability of exciton bound by ionized
donor impurity is analyzed and discussed.
