  Twisted bilayer graphene exhibits electronic properties that are highly
correlated with the size and arrangement of moir\'e patterns. While rigid
rotation of two layers creates the topology of moir\'e patterns, local
rearrangements of the atoms due to interlayer van der Waals interactions result
in atomic reconstruction within the moir\'e cells. The ability to manipulate
these patterns by controlling twist angle and/or externally applied strain
provides a promising route to tune their properties. While this phenomenon has
been extensively studied for angles close to or smaller than the magic angle
({\theta}m=1.1{\deg}), its extent for higher angles and how it evolves with
strain is unknown and is believed to be mostly absent at high angles. We use
theoretical and numerical analyses to resolve reconstruction in angles above
{\theta}m using interpretive and fundamental physical measures. In addition, we
propose a method to identify local regions within moir\'e cells and track their
evolution with strain for a range of representative high twist angles. Our
results show that reconstruction is actively present beyond the magic angle and
its contribution to the evolution of the moir\'e cells is major. Our
theoretical method to correlate local and global phonon behavior provides
further validation on the role of reconstruction at higher angles. Our findings
provide a better understanding of moir\'e reconstruction in large twist angles
and the evolution of moir\'e cells in the presence of strain, that might be
very crucial for twistronics-based applications.
