  Light-emitting diodes are of importance for lighting, displays, optical
interconnects, logic and sensors. Hence the development of new systems that
allow improvements in their efficiency, spectral properties, compactness and
integrability could have significant ramifications. Monolayer transition metal
dichalcogenides have recently emerged as interesting candidates for
optoelectronic applications due to their unique optical properties.
Electroluminescence has already been observed from monolayer MoS2 devices.
However, the electroluminescence efficiency was low and the linewidth broad due
both to the poor optical quality of MoS2 and to ineffective contacts. Here, we
report electroluminescence from lateral p-n junctions in monolayer WSe2 induced
electrostatically using a thin boron nitride support as a dielectric layer with
multiple metal gates beneath. This structure allows effective injection of
electrons and holes, and combined with the high optical quality of WSe2 it
yields bright electroluminescence with 1000 times smaller injection current and
10 times smaller linewidth than in MoS2. Furthermore, by increasing the
injection bias we can tune the electroluminescence between regimes of
impurity-bound, charged, and neutral excitons. This system has the required
ingredients for new kinds of optoelectronic devices such as spin- and
valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional
electro-optic modulators.
