  The semimetal quantum well (QW) based on HgTe structures exhibiting unusual
transport properties at low temperature is examined experimentally. It
demonstrates either a linear or quadratic growth of resistance with temperature
at different top-gate voltages in the semimetal regime. We develop a
theoretical model of HgTe-based semimetal QW resistance temperature dependence
based on electron-hole scattering processes at low temperatures. We apply the
Boltzmann transport equation approach to study the effect of electron-hole
scattering in a semimetal QW. The calculated temperature behavior of 2D
semimetal resistivity demonstrates an excellent agreement with experimental
findings.
