  Employing a nonequilibrium Green's function approach, we examine the effects
of long-range hole-impurity scattering on spin-Hall current in $p$-type bulk
semiconductors within the framework of the self-consistent Born approximation.
We find that, contrary to the null effect of short-range scattering on
spin-Hall current, long-range collisions do produce a nonvanishing contribution
to the spin-Hall current, which is independent of impurity density in the
diffusive regime and relates only to hole states near the Fermi surface. The
sign of this contribution is opposite to that of the previously predicted
disorder-independent spin-Hall current, leading to a sign change of the total
spin-Hall current as hole density varies. Furthermore, we also make clear that
the disorder-independent spin-Hall effect is a result of an interband
polarization directly induced by the dc electric field with contributions from
all hole states in the Fermi sea.
