  We use semiclassical Monte Carlo approach to investigate spin polarized
transport in InP and InSb nanowires. Spin dephasing in III-V channels is caused
due to D'yakonov- Perel (DP) relaxation and due to Elliott-Yafet (EY)
relaxation. The DP relaxation occurs because of bulk inversion asymmetry
(Dresselhaus spin-orbit interaction) and structural inversion asymmetry (Rashba
spin-orbit interaction). The injection polarization direction studied is that
along the length of the channel. The dephasing rate is found to be very strong
for InSb as compared to InP which has larger spin dephasing lengths. The
ensemble averaged spin components vary differently for both InP and InSb
nanowires. The steady state spin distribution also shows a difference between
the two III-V nanowires.
