  Realization of a robust nanotube-heterostructure tunneling transistors [Solid
State Comm. 116, p. 569 (2000)] requires the difficult formation [Science 293,
p. 76 (2001)] of a central nanoscale barrier separating a pair of outside
metallic leads. Here I suggest an alternative surface-based assembly based on
self-organization of one-dimensional metallic states on oxides and trapping
well-resolved resonant orbitals in a central island. I present and explain the
(universal) transistor characteristics and robustness. In addition, I calculate
typical the island/level-to-gate capacitance to predict ultrafast (beyond-THz)
switching but also document a limited importance of Coulomb blockade effects in
the (nanotube) resonant-tunneling transistors.
