  Silicon Carbide (SiC) is a typical material for third-generation
semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface,
was investigated by both experimental measurements and theoretical
calculations. The structure of 4H-SiC/SiO2 was characterized by using
transmission electron microscopy and X-ray diffraction. The TBR is measured as
8.11*10-8 m2K/W by 3-omega method. Furthermore, the diffuse mismatch model was
employed to predict the TBR of different interfaces which is in good agreement
with measurements. Heat transport behavior based on phonon scattering
perspective was also discussed to understand the variations of TBR across
different interfaces. Besides, the intrinsic thermal conductivity of SiO2 thin
films (200~1,500 nm in thickness) on 4H-SiC substrates was measured by 3 omega
procedure, as 1.42 W/mK at room temperature. It is believed the presented
results could provide useful insights on the thermal management and heat
dissipation for SiC devices.
