  In this work we present silicon process compatible, stable and reliable
($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times
10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back
Schottky diodes. Materials choice of electrode, thickness of semiconductor
layer and doping level are investigated by numerical simulation, experiments
and current-voltage equations to give a general design consideration when
back-to-back Schottky diodes are used as selector device for Resistive Random
Access Memory(RRAM) arrays.
