  Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs
buffer of a standard heterostructure were investigated by magnetotransport
measurements. In magnetic fields oriented parallel to the electron layers, the
magnetoresistance exhibits an oscillation associated with the depopulation of
the higher occupied subband and the field-induced transition into a decoupled
bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields
allow to reconstruct the evolution of the electron concentration in the
individual subbands as a function of the in-plane magnetic field. The
characteristics of the system derived experimentally are in quantitative
agreement with numerical self-consistent-field calculations of the electronic
structure.
