  RF radiation spectrum is central to wireless and radar systems among numerous
high-frequency device technologies. Here, we demonstrate sensing of RF signals
in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2),
a quantum material that has garnered significant interest for its
insulator-to-metal transition. We find the electrical resistance of both
stoichiometric as well as off-stoichiometric vanadium oxide films can be
modulated with RF wave exposures from a distance. The response of the materials
to the RF waves can be enhanced by either increasing the power received by the
sample or reducing channel separation. We report a significant ~73% drop in
resistance with a 5 {\mu}m channel gap of the VO2 film at a characteristic
response time of 16 microseconds. The peak sensitivity is proximal to the phase
transition temperature boundary that can be engineered via doping and crystal
chemistry. Dynamic sensing measurements highlight the films' rapid response and
broad-spectrum sensitivity. Engineering electronic phase boundaries in
correlated electron systems could offer new capabilities in emerging
communication technologies.
