  Growing demands for precise current measurements, such as atto-ampere-level
measurement of cross-cellular biological current transduction, have spotlighted
a pressing need for low-noise resistors with ultra-high resistance immune to
voltage fluctuations. Traditional semi-insulating materials, however, struggle
to provide consistent resistance across varying voltages. To bridge this gap,
we introduce a design that integrates semi-insulating 4H-SiC with atomic-level
metal oxide interlayers and electrodes. The strategic adjustment of surface
states via atomic-scale metal oxide layers optimizes the work functions on
4H-SiC surfaces, validated through density functional theory simulations. This
design transcends conventional limitations, establishing an ideal Ohmic
behavior and maintains Peta-Ohm-level resistance, unaffected by voltage
variations. These on-chip devices with fine-tuned resistance are compatible
with integrated circuit manufacturing processes, making them ideally suited for
applications in precision electronics.
