  In this work, we investigate the transport phenomena in compound
semiconductor material based buried channel Quantum Well MOSFET with a view to
developing a simple and effective model for the device current. Device
simulation has been performed in quantum ballistic regime using non-equilibrium
Greens function (NEGF) formalism. The simulated current voltage characteristics
using a novel concept of effective transmission coefficient has been found to
define the reported experimental data with high accuracy. The proposed model
has also been effective to capture the transport characteristics reported for
other compound semiconductor material based field effect transistors. The
concept of the proposed effective transmission coefficient and hence the model
lends itself to be a simple and powerful device analysis tool which can be
extensively used to predict the performance of a wide variety of compound
semiconductor devices in the pre fabrication stage. It has also demonstrated
consistency with device characteristics for doping concentration and channel
length scaling. Thus the model can help the device or process engineers to tune
the devices for the best possible performance.
