  To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based
lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and
introduce a larger local strain into the Si channel by changing a capping
insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through
these improvements, with significant roles played by a reduction in the
resistance-area product of the ferromagnetic contacts and an enhancement of the
momentum relaxation time in the Si channel.
