  We present first-principles calculations of ballistic spin injection in
Fe/GaAs and Fe/ZnSe junctions with orientation (001), (111), and (110). We find
that the symmetry mismatch of the Fe minority-spin states with the
semiconductor conduction states can lead to extremely high spin polarization of
the current through the (001) interface for hot and thermal injection
processes. Such a symmetry mismatch does not exist for the (111) and (110)
interfaces, where smaller spin injection efficiencies are found. The presence
of interface states is found to lower the current spin polarization, both with
and without a Schottky barrier. Finally, a higher bias can also affect the spin
injection efficiency.
