  Quantum processors based on integrated nanoscale silicon spin qubits are a
promising platform for highly scalable quantum computation. Current CMOS spin
qubit processors consist of dense gate arrays to define the quantum dots,
making them susceptible to crosstalk from capacitive coupling between a dot and
its neighbouring gates. Small but sizeable spin-orbit interactions can transfer
this electrostatic crosstalk to the spin g-factors, creating a dependence of
the Larmor frequency on the electric field created by gate electrodes
positioned even tens of nanometers apart. By studying the Stark shift from tens
of spin qubits measured in nine different CMOS devices, we developed a
theoretical frawework that explains how electric fields couple to the spin of
the electrons in increasingly complex arrays, including those electric
fluctuations that limit qubit dephasing times $T_2^*$. The results will aid in
the design of robust strategies to scale CMOS quantum technology.
