  Thin Bi films are interesting candidates for spintronic applications due to a
large spin-orbit splitting that, combined with the loss of inversion symmetry
at the surface, results in a band structure that is not spin-degenerate. In
recent years, applications for topological insulators based on Bi and Bi alloys
have as well attracted much attention. Here we present ARPES studies of
Bi/InAs(100) interface. Bismuth deposition followed by annealing of the surface
results in the formation of one full Bi monolayer decorated by Bi-nanolines. We
found that the building up of the interface does affect the electronic
structure of the substrate. As a consequence of weak interaction, bismuth
states are placed in the gaps of the electronic structure of InAs(100). We
observe a strong resonance of the Bi electronic states close to the Fermi
level; its intensity depends on the photon energy and the photon polarization.
These states show nearly no dispersion when measured perpendicular to the
nanolines, confirming their one-dimensionality.
