  Despite a large amount of data and numerous theoretical proposals, the
microscopic mechanism of transport in thick film resistors remains unclear.
However, recent low temperature measurements point toward a possible variable
range hopping mechanism of transport. Here we examine how such a mechanism
affects the gauge factor of thick film resistors. We find that at sufficiently
low temperatures $T$, for which the resistivity follows the Mott's law
$R(T)\sim \exp(T_0/T)^{1/4}$, the gauge factor GF is proportional to
$(T_0/T)^{1/4}$. Moreover, the inclusion of Coulomb gap effects leads to ${\rm
GF}\sim (T_0'/T)^{1/2}$ at lower temperatures. In addition, we study a simple
model which generalizes the variable range hopping mechanism by taking into
account the finite mean inter-grain spacing. Our results suggest a possible
experimental verification of the validity of the variable range hopping in
thick film resistors.
