  We show that in dilute metallic p-SiGe heterostructures, magnetic field can
cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating
states are observed between quantum Hall states with filling factors \nu=1 and
2 and, for the first time, between \nu=2 and 3 and between \nu=4 and 6. The
latter are in contradiction with the original global phase diagram for the
quantum Hall effect. We suggest that the application of a (perpendicular)
magnetic field induces insulating behavior in metallic p-SiGe heterostructures
in the same way as in Si MOSFETs. This insulator is then in competition with,
and interrupted by, integer quantum Hall states leading to the multiple
re-entrant transitions. The phase diagram which accounts for these transition
is similar to that previously obtained in Si MOSFETs thus confirming its
universal character.
