  If a DC magnetic field is applied parallel to the plane of amorphous CoZr(RE)
thin films during sputter depositing, a uniaxial anisotropy is formed the
direction of which depends upon the choice of RE substituted and its
concentration. When RE = Gd a perpendicular anisotropy K, forms over a large
concentration range, a spin reorientation process being at the origin of the
process. A well-defined K, is developed also in CoFeZrGd and CoZrGdSm films.
CoZrGdDy films exhibit simultaneously a perpendicular and an in-plane uniaxial
anisotropy. The related magnetization process and domain structures are quite
peculiar.
