  A simple laser scribing process has been developed to fabricate low-voltage
junctionless in-plane-gate thin-film transistors (TFTs) arrays without any mask
and photolithography. Such junctionless TFTs feature that the channel and the
source/drain electrodes are of the same indium-tin-oxide films without any
intentional source/drain junction deposition process. Effective field-effect
modulation of the drain current has been realized on such in-plane-gate device
with a field-effect mobility of ~12.6cm2/Vs. At last, AND gate logic function
was demonstrated on dual in-plane-gate device.
