  In this paper a detailed simulation of irradiated pixel sensors was used to
investigate the effects of radiation damage on charge sharing and position
determination. The simulation implements a model of radiation damage by
including two defect levels with opposite charge states and trapping of charge
carriers. We show that charge sharing functions extracted from the simulation
can be parameterized as a function of the inter-pixel position and used to
improve the position determination. For sensors irradiated to Phi=5.9x10^14
n/cm^2 a position resolution below 15 um can be achieved after calibration.
