  New configuration of confinement structure is utilized to improve
optoelectronic performances, including threshold current, AC current gain as
well as optical bandwidth and optical output power of single quantum well
transistor laser. Considering the drift component in addition to the diffusion
term in electron current density, a new continuity equation is developed to
analyze the proposed structures. Physical parameters including, electron
mobility, recombination lifetime, optical confinement factor, electron capture
time and photon lifetime is calculated for new structures. Based on solving
continuity equation in separate confinement heterostructures, threshold current
reduces 67% and optical output power increases 37%.
