  The quality of the semiconductor-barrier interface plays a pivotal role in
the demonstration of high quality reproducible quantum dots for quantum
information processing. In this work, we have measured SiMOSFET Hall bars on
undoped Si substrates in order to investigate the quality of the devices
fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs
with a sub-10 nm oxide thickness indicating a high quality interface, suitable
for future qubit applications. We also study the influence of gate materials on
the mobilities and discuss the underlying mechanisms, giving insight into
further material optimization for large scale quantum processors.
