  In this work, the effect of size and wetting layer on subband electronic
envelop functions, eigenenergies, linear and nonlinear absorption coefficients
and refractive indices of a dome-shaped InAs/GaAs quantum dot were
investigated. In our model, a dome of InAs quantum dot with its wetting layer
embedded in a GaAs matrix was considered. A finite height barrier potential at
the InAs/GaAs interface was assumed. To calculate envelop functions and
eigenenergies, the effective one electronic band Hamiltonian and electron
effective mass approximation were used. The linear and nonlinear optical
properties were calculated by the density matrix formalism.
