  The method of relativistic molecular dynamics is applied for accurate
computational modelling and numerical analysis of the channelling phenomena for
855 MeV electrons in bent oriented silicon (111) crystal. Special attention is
devoted to the transition from the axial channelling regime to the planar one
in the course of the crystal rotation with respect to the incident beam.
Distribution in the deflection angle of electrons and spectral distribution of
the radiation emitted are analysed in detail. The results of calculations are
compared with the experimental data collected at the MAinzer MIctrotron (MAMI)
facility.
