  The effect of applying an external electric field on doping-induced
spin-orbit splitting of the lowest conduction-band states in a bismuth-doped
zinc oxide nanowire is studied by performing electronic structure calculations
within the framework of density functional theory. It is demonstrated that spin
splitting in Bi-doped ZnO nanowires could be tuned and enhanced electrically
via control of the strength and direction of the applied electric field, thanks
to the nonuniform and anisotropic response of the ZnO:Bi nanowire to external
electric fields. The results reported here indicate that a single ZnO nanowire
doped with a low concentration of Bi could function as a spintronic device,
operation of which is controlled by applied lateral electric fields.
