  A theoretical prediction of the spin-dependent electron self-energy and
in-plane transport of a two-dimensional electron gas in proximity with a
ferromagnetic gate is presented. The application of the predicted
spin-dependent properties is illustrated by the proposal of a device
configuration with two neighboring ferromagnetic gates which produces a
magnetoresistance effect on the channel current generated by nonmagnetic source
and drain contacts. Specific results are shown for a silicon inversion layer
with iron gates. The gate leakage current is found to be beneficial to the spin
effects.
