  We studied the defects of Bi2Se3 generated from Bridgman growth of
stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size,
and transport properties are strongly affected by the types of defect
generated. Major defect types of Bi_Se antisite and partial Bi_2-layer
intercalation are identified through combined studies of direct atomic-scale
imaging with scanning transmission electron microscopy (STEM) in conjunction
with energy-dispersive X-ray spectroscopy (STEM-EDX), X-ray diffraction, and
Hall effect measurements. We propose a consistent explanation to the origin of
defect type, growth morphology, and transport property.
