  We report on the measurement of the neutron radiation hardness of silicon
photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and
SensL in Ireland. Samples from both companies were irradiated by neutrons
created by a 1 GeV electron beam hitting a thin lead target at Jefferson Lab
Hall A. More tests regarding the temperature dependence of the neutron
radiation damage and self-annealing were performed on Hamamatsu SiPMs using a
calibrated Am-Be neutron source from the Jefferson Lab Radiation Control group.
As the result of irradiation both dark current and dark rate increase linearly
as a function of the 1 MeV equivalent neutron fluence and a temperature
dependent self-annealing effect is observed.
