  We present a single electron approach to analyse the magnetotransport
properties of the monolayer graphene as a function of both, the gate voltage
and the magnetic field; and, also, their evolution with temperature. The model
proposed means the extension of our previous one developed for studying the
quantum Hall and Shubnikov-de Haas effects of a two-dimensional electron system
in a semiconductor quantum well. Now, the study in this framework of both
phenomena in graphene involves including the presence of two bands and two
degeneracy valleys, (points K and K' in the reciprocal space). Based in a
single electron approximation, we show it is capable to reproduce the entire
characteristics observed in the experiments for the Hall and diagonal
magnetoconductivities (and the corresponding magnetoresistivities), as a
function of the gate voltage and the magnetic field. In the model the observed
Hall plateaux series in the monolayer graphene, determined by the expression
2(2n+1), arises in a natural way as a consequence of the particular
quantization of the energy spectrum of graphene. Therefore, on the other hand
the proposed approach integrates the quantum Hall effects observed in graphene
and quantum wells semiconductors
