  Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic
resistivity of a material can be decreased by orders of magnitude upon
application of a magnetic field. Such an effect could be the basis of the next
generation of magnetic memory devices. Here we report CMR in the
antiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition between
an antiferromagnetic insulating phase with strong electron correlations and a
paramagnetic semiconductor upon application of a magnetic field. The discovery
of CMR in antiferromagnetic Mn2+ oxypnictide materials could open up an array
of materials for further investigation and optimisation for technological
applications.
