  Emerging applications of self-assembled semiconductor quantum dot (QD)-based
nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm)
present challenges in terms of controlled synthesis of their low-density
ensembles, critical for device processing with an isolated QD. This work shows
how to control the surface density and size of InAs/InP quantum dots over a
wide range by tailoring the conditions of Stranski-Krastanow growth. We
demonstrate that in the near-critical growth regime, the density of quantum
dots can be tuned between $10^7$ and $10^{10} cm^{-2}$. Furthermore, employing
both experimental and modeling approaches, we show that the size (and therefore
the emission wavelength) of InAs nanoislands on InP can be controlled
independently from their surface density. Finally, we demonstrate that our
growth method gives low-density ensembles resulting in well-isolated
QD-originated emission lines in the telecom C-band.
