  AgF2 is a layered material and a correlated charge transfer insulator with an
electronic structure very similar to the parent compounds of cuprate high-Tc
superconductors. It is also interesting for being a powerful oxidizer. Here we
present a first principles computation of its electronic properties in a slab
geometry including its work function for the (010) surface (7.76 eV) which
appears to be one of the highest among known materials surpassing even that of
fluorinated diamond (7.24 eV). We demonstrate that AgF2 will show a broken-gap
type alignment becoming electron doped and promoting injection of holes in many
wide band gap insulators if chemical reaction can be avoided. Novel junction
devices involving p type and n type superconductors are proposed. The issue of
chemical reaction is discussed in connection with the possibility to create
flat AgF2 monolayers achieving high-Tc superconductivity. As a first step in
this direction, we study the stability and properties of an isolated AgF2
monolayer.
