  The integration of a double barrier resonant tunneling diode within a
unipolar optical waveguide provides electrical gain over a wide bandwidth. Due
to the non-linearities introduced by the double barrier resonant tunneling
diode an unipolar InGaAlAs/InP optical waveguide can be employed both as
optical modulator and optical detector. The modeling results of a device
operating as optical modulator agree with preliminary experimental data,
foreseeing for an optimized device modulation depths up to 23 dB with chirp
parameter between -1 and 0 in the wavelength range analyzed (1520 nm - 1600
nm).
