  A novel modification of the Tersoff potential for Si is presented. The
modification improves the transferability of the Tersoff potential for liquid
states without the change of original parameters and with no alteration of bulk
properties. Also, the modification introduces a correction term for
high-pressure states. The modification is meaningful considering that by high
energy irradiations local liquid structures and unstable high-pressure
manifolds may occur, therefore an interatomic potential must have an acceptable
reliability on high thermal/pressure situations to simulate such phenomenon.
Particularly, in the modification, a new screening function replaces the radial
cutoff function and the bond order function is slightly changed. Also, a
repulsive energy function is replaced by a correction function within a
specific pair distance.
