  We show that shot noise in a resonant tunneling diode biased in the negative
differential resistance regions of the I-V characteristic is enhanced with
respect to ``full'' shot noise. We provide experimental results showing a Fano
factor up to 6.6, and show that it is a dramatic effect caused by
electron-electron interaction through Coulomb force, enhanced by the particular
shape of the density of states in the well. We also present numerical results
from the proposed theory, which are in agreement with the experiment,
demonstrating that the model accounts for the relevant physics involved in the
phenomenon.
