  This paper describes the design and characteristics of monolithically
integrated three-terminal gated III-Nitride light emitting diodes (LEDs)
devices. The impact of channel doping and thickness on the voltage penalty of
the transistor-LED hybrid device is analyzed, and it is shown that with
appropriate design, low voltage drop can be realized across integrated gated
LED structures. The impact of device design on the switching charge is
investigated, and it is shown that the adoption of an integrated LED/transistor
structure can reduce the switching charge necessary for operation of a switched
LED display device by an order of magnitude when compared with stand-alone
light-emitting diodes.
