  Resonant transport in a hybrid semiconductor-superconductor microstructure
grown by MBE on GaAs is presented. This structure experimentally realizes the
prototype system originally proposed by de Gennes and Saint-James in 1963 in
\emph{all}-metal structures. A low temperature single peak superimposed to the
characteristic Andreev-dominated subgap conductance represents the mark of such
resonant behavior. Random matrix theory of quantum transport was employed in
order to analyze the observed magnetotransport properties and ballistic effects
were included by directly solving the Bogoliubov-de Gennes equations.
