  We investigate the effect of pressure on the electronic and magnetic states
of CdV$_2$O$_4$ by using ab initio electronic structure calculations. The
Coulomb correlation and spin-orbit coupling play important role in deciding the
structural, electronic and magnetic properties of the compound. The total
magnetic moment of V ion is found to be $\sim$1.3 $\mu_B$ and making an angle
of $\sim$9.5 degree with the z-axis. In the tetragonal phase, the ground state
is the orbital ordered state where V $d_{xz}$ and $d_{yz}$ obtitals are mainly
occupied at the neighbouring sites. This work predicts the electronic phase
transition from orbital-ordered-insulator to orbital-ordered-metal to
orbital-disordered-metal with increasing pressure. The pressure induced
broadening of lower and upper Hubbard bands gives rise to metal-insulator
transition above 35 GPa. The simple mean-field theory used in the present work
is able to describe the pressure dependent variation of the antiferromagnetic
transition temperature suggesting the applicability of the method in the study
of the magnetic behaviour of similar geometrically frustrated systems.
