  High quality thin films of the ferromagnetic semiconductor EuO have been
prepared and were studied using a new form of spin-resolved spectroscopy. We
observed large changes in the electronic structure across the Curie and
metal-insulator transition temperature. We found that these are caused by the
exchange splitting of the conduction band in the ferromagnetic state, which is
as large as 0.6 eV. We also present strong evidence that the bottom of the
conduction band consists mainly of majority spins. This implies that doped
charge carriers in EuO are practically fully spin polarized.
