  We study electrostatic quantum dot confinement for charge carriers in
silicene. The confinement is formed by vertical electric field surrounding the
quantum dot area. The resulting energy gap in the outside of the quantum dot
traps the carriers within, and the difference of electrostatic potentials on
the buckled silicene sublattices produces nonzero carrier masses outside the
quantum dot. We study the electrostatic confinement defined inside a silicene
flake with both the atomistic tight-binding approach as well as with the
continuum approximation for a circularly symmetric electrostatic potential. We
find localization of the states within the quantum dot and their decoupling
from the edge that makes the spectrum of the localized states independent of
the crystal termination. For an armchair edge of the flake removal of the
intervalley scattering by the electrostatic confinement is found
