  A metal-insulator transition was induced by in-plane magnetic fields up to 27
T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation
is not observed for perpendicular magnetic fields. A comparison with
magnetoconductivity investigations in the weakly localised regime shows that
the delocalising effect originates from the interaction-induced spin-triplet
term in the particle-hole diffusion channel. It is expected that this term,
possibly together with the singlet particle-particle contribution, is of
general importance in disordered n-type Si bulk and heterostructures.
