  We report the concept of a near-field memory device based on the radiative
bistability effect in the system of two closely separated parallel plates of
SiO$_2$ and VO$_2$ which exchange heat by thermal radiation in vacuum. We
demonstrate that the VO$_2$ plate, having metal-insulator transition at 340 K,
has two thermodynamical steady-states. One can switch between the states using
an external laser impulse. We show that due to near-field photon tunneling
between the plates, the switching time is found to be only 5 ms which is
several orders lower than in case of far field.
