  Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ
ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel
material as opposed to the gate dielectric in conventional ferroelectric FETs
(FeFETs) were prepared and measured from room to the liquid-helium
temperatures. These FeSmFETs were found to yield evidence for the reorientation
of the electrical polarization and an electric field induced metallic state in
{\alpha}-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for
the fundamental study of ferroelectric metals as well as the exploration of the
integration of data storage and logic operations in the same device.
