  The manufacturing cost of quantum cascade lasers is still a major bottleneck
for the adoption of this technology for chemical sensing. The integration of
Mid-Infrared sources on Si substrate based on CMOS technology paves the way for
high-volume low-cost fabrication. Furthermore, the use of Si-based fabrication
platform opens the way to the co-integration of QCL Mid-InfraRed sources with
SiGe-based waveguides, allowing realization of optical sensors fully integrated
on planar substrate. We report here the fabrication and the characterization of
DFB-QCL sources using top metal grating approach working at 7.4 microns fully
implemented on our 200 mm CMOS pilot line. These QCL featured threshold current
density of 2.5 kA/cm2 and a linewidth of 0.16 cm-1 with a high fabrication
yield. This approach paves the way toward a Mid-IR spectrometer at the silicon
chip level.
