  The development of versatile and novel material platforms for integrated
photonics is of prime importance in the perspective of future applications of
photonic integrated circuits for quantum information and sensing. Here we
present a low-loss material platform based on high-refractive index silicon
oxynitride (\ce{SiON}), which offers significant characteristics for linear and
non-linear optics applications in a wide range of red/near-infrared
wavelengths. The demonstrated propagation loss $<1.5$~dB/cm for visible
wavelengths enables the realization of long and intricate circuitry for photon
manipulations, as well as the realization of high quality factor resonators. In
addition, the proposed \ce{SiON} shows a high nonlinear coefficient of
$10^{-19}$~m$^2$/W, improving the strength of nonlinear effects exploitable for
on-chip photon generation schemes.
