  A single-electron inverter was fabricated that switches from a high output to
a low output when a fraction of an electron is added to the input. For the
proper operation of the inverter, the two single-electron transistors that make
up the inverter must exhibit voltage gain. Voltage gain was achieved by
fabricating a combination of parallel-plate gate capacitors and small tunnel
junctions in a two-layer circuit. Voltage gain of 2.6 was attained at 25 mK and
remained larger than one for temperatures up to 140 mK. The temperature
dependence of the gain agrees with the orthodox theory of single-electron
tunneling.
