  A systematic study of hole compensation effect on magnetic properties, which
is controlled by defect compensation through ion irradiation, in (Ga,Mn)As,
(In,Mn)As and (Ga,Mn)P is presented in this work. In all materials, both Curie
temperature and magnetization decrease upon increasing the hole compensation,
confirming the description of hole mediated ferromagnetism according to the p-d
Zener model. The material dependence of Curie temperature and magnetization
versus hole compensation reveals that the manipulation of magnetic properties
in III-Mn-V dilute ferromagnetic semiconductors by ion irradiation is strongly
influenced by the energy level location of the produced defect relative to the
band edges in semiconductors.
