  Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have
been recently proposed as appealing candidate materials for spintronic
applications owing to their distinctive atomic crystal structure and exotic
physical properties arising from the large bonding anisotropy. Here we
introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the
nonmagnetic spacer. In contrast with what expected from the semiconducting
band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic
behavior. This originates from their strong hybridization with the Ni and Fe
atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to
240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures.
The experimental work is accompanied by the first principle electron transport
calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our
results clearly identify TMDs as a promising spacer compound in magnetic tunnel
junctions and may open a new avenue for the TMDs-based spintronic applications.
