  Passivation of the GaAs surface was attempted using aqueous
P2S5-NH4OH,(NH4)2Sx and plasma nitrogenataion and hydrogenation. Results
indicate that plasma nitrogenation with pretreatment of plasma hydrogenation
produced consistent reduction in reverse leakage current at room-temperature
for all p and n type schottky diodes. Some diodes showed an order of magnitude
improvement in current density. Aqueous passivation showed similarly an
improvement however, additional experimentation is required into long term
stability and the arsenic-sulphur covalent bond strength.
