  Solid-state electronics based on utilizing the electron spin degree of
freedom for storing and processing information can pave the way for
next-generation spin-based computing. However, the realization of spin
communication between multiple devices in complex spin circuit geometries,
essential for practical applications, is still lacking. Here, we demonstrate
the spin current propagation in two-dimensional (2D) circuit architectures
consisting of multiple devices and configurations using a large area CVD
graphene on SiO2/Si substrate at room temperature. Taking advantage of the
significant spin transport distance reaching 34 {\mu}m in commercially
available wafer-scale graphene grown on Cu foil, we demonstrate that the spin
current can be effectively communicated between the magnetic memory elements in
graphene channels within 2D circuits of Y-junction and Hexa-arm architectures.
We further show that by designing graphene channels and ferromagnetic elements
at different geometrical angles, the symmetric and antisymmetric components of
the Hanle spin precession signal can be remarkably controlled. These findings
lay the foundation for the design of complex 2D spintronic circuits, which can
be integrated into efficient electronics based on the transport of pure spin
currents.
