  Hydrogen incorporation in diluted nitride semiconductors dramatically
modifies the electronic and structural properties of the crystal through the
creation of nitrogen-hydrogen complexes. We report a convergent beam
electron-diffraction characterization of diluted nitride
semiconductor-heterostructures patterned at a sub-micron scale and selectively
exposed to hydrogen. We present a method to determine separately perpendicular
mismatch and static disorder in pristine and hydrogenated heterostructures. The
roles of chemical composition and strain on static disorder have been
separately assessed.
