  Large intrinsic anomalous Hall effect (AHE) originating in the Berry
curvature has attracted growing attention for potential applications. Recently
proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an
excellent platform for controlling the intrinsic AHE because it only hosts a
Weyl-points related band structure near the Fermi energy. Here we report the
fabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and control
of their anomalous Hall effect by film technique. As also analyzed by
first-principles calculations of energy-dependent intrinsic anomalous Hall
conductivity, the obtained anomalous Hall effect shows a sharp peak as a
function of carrier density, demonstrating clear energy dependence of the
intrinsic AHE.
