  Using 3D k.p calculation including strain and piezoelectricity we predict
variation of electronic and optical properties of InAs/GaAs quantum dots (QDs)
with the substrate orientation. The QD transition energies are obtained for
high index substrates [11k], where k = 1,2,3 and are compared with [001]. We
find that the QD size in the growth direction determines the degree of
influence of the substrate orientation: the flatter the dots, the larger the
difference from the reference [001] case.
