  In this paper we carry out a theoretical and experimental study of the nature
of graphene/semiconductor Schottky contact. We present a simple and
parameter-free carrier transport model of graphene/semiconductor Schottky
contact derived from quantum statistical theory, which is validated by the
quantum Landauer theory and first-principle calculations. The proposed model
can well explain experimental results for samples of different types of
graphene/semiconductor Schottky contact.
