  Amorphous molybdenum silicide compounds have attracted significant interest
for potential device applications, particularly in single-photon detector. In
this work, the temperature-dependent resistance and magneto-resistance
behaviors were measured to reveal the charge transport mechanism, which is of
great importance for applications but is still insufficient. It is found that
Mott variable hopping conductivity dominates the transport of sputtered
amorphous molybdenum silicide thin films. Additionally, the observed
magneto-resistance crossover from negative to positive is ascribed to the
interference enhancement and the shrinkage of electron wave function, both of
which vary the probability of hopping between localized sites.
