  Here, we report the growth and characterization of single crystals of
NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and
layered growth are confirmed through x-ray diffraction and Scanning electron
microscopy respectively. A slight contraction in lattice parameters is seen
after Nd doping. Also a minute shift in vibrational modes of recorded Raman
spectra has been observed by doping of Nd in Sb2Te3. The magneto-resistance
values under magnetic field of 5Tesla for Sb2Te3 are 75 percent at 2.5K and 60
percent at 20K, but only 40 percent at 5K for Nd0.1Sb1.9Te3. DC magnetic
measurements exhibit expected diamagnetic and paramagnetic behaviors for pure
and Nd doped crystals respectively. A cusp-like behavior is observed in magneto
conductivity of both pure and Nd doped crystals at low magnetic fields below 1
Tesla which is analyzed using Hikami Larkin Nagaoka (HLN) model. For Sb2Te3 the
fitted parameters alpha values are -1.02 and -0.58 and the phase coherence
lengths are 50.8(6)nm & 34.9(8)nm at temperatures 2.5K and 20K respectively.
For Nd0.1Sb1.9Te3, alpha is -0.29 and coherence length is 27.2(1) nm at 5K. The
{\alpha} values clearly show the presence of weak anti localization effect in
both, pure and Nd doped samples. Also with Nd doping, the contribution of bulk
states increases in addition to conducting surface states in overall conduction
mechanism.
