  Laser cutting of semiconductor wafers and transparent dielectrics has become
a dominant process in manufacturing industries, encompassing a wide range of
applications from flat display panels to microelectronic chips. Limited by the
diffraction barrier imposed on the beam width and its longitudinal extend of
laser focus, a trade-off must be made between cutting accuracy and aspect ratio
in conventional laser processing, with accuracy typically approaching a micron
and the aspect ratio on the order of $10^2$. Herein, we propose a method to
circumvent this limitation. It is based on the laser modification induced by a
back-scattering interference crawling mechanism, which creates a positive
feedback for homogenizing longitudinal energy deposition and lateral
sub-wavelength light confinement during laser-matter interaction. Consequently,
cutting width on the scale of tens of nanometers and aspect ratio $10^3 \sim
10^4$ were simultaneously achieved. We refer to this technique as ``super
stealth dicing'', which is validated through numerical simulations, ensuring
its broad applicability. It can be applied to various transparent functional
solids, such as glass, laser crystal, ferroelectric, and semiconductor, and is
elevating the precision of future advanced laser dicing, patterning, and
drilling into the nanometric era.
