  The study of electronic properties in topological systems is one of the most
fascinating topics in condensed matter physics, which has generated enormous
interests in recent times. New materials are frequently being proposed and
investigated to identify their non-trivial band structure. While sophisticated
techniques such as angle-resolved photoemission spectroscopy have become
popular to map the energy-momentum relation, the transport experiments lack any
direct confirmation of Dirac and Weyl fermions in a system. From band structure
calculations, VAl$_{3}$ has been proposed to be a type II topological Dirac
semimetal. This material represents a large family of isostructural compounds,
all having similar electronic band structure and is an ideal system to explore
the rich physics of Lorentz symmetry violating Dirac fermions. In this work, we
present a detailed analysis on the magnetotransport properties of VAl$_{3}$. A
large, non-saturating magnetoresistance has been observed. Hall resistivity
reveals the presence of two types of charge carriers with high mobility. Our
measurements show a large planar Hall effect in this material, which is robust
and can be easily detectable up to high temperature. This phenomenon originates
from the relativistic chiral anomaly and non-trivial Berry curvature, which
validates the theoretical prediction of the Dirac semimetal phase in VAl$_{3}$.
