  Silicon Carbide device (4H-SiC) has potential radiation hardness, high
saturated carrier velocity and low temperature sensitivity theoretically. The
Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent
time performance. Therefore, the 4H-SiC LGAD is introduced in this work for
application to detect the Minimum Ionization Particles (MIPs). We provide
guidance to determine the thickness and doping level of the gain layer after an
analytical analysis. The gain layer thickness $d_{gain}=0.5~\mu m$ is adopted
in our design. We design two different types of 4H-SiC LGAD which have two
types electric field, and the corresponding leakage current, capacitance and
gain are simulated by TCAD tools. Through analysis of the simulation results,
the advantages and disadvantages are discussed for two types of 4H-SiC LGAD.
