  In order to continue to improve integrated circuit performance and
functionality, scaled transistors with short channel lengths and low thickness
are needed. But the further scaling of silicon-based devices and the
development of alternative semiconductor channel materials that are compatible
with current fabrication processes is challenging. Here we report
atomic-layer-deposited indium oxide transistors with channel lengths down to 8
nm, channel thicknesses down to 0.5 nm and equivalent dielectric oxide
thickness down to 0.84 nm. Due to the scaled device dimensions and low contact
resistance, the devices exhibit high on-state currents of 3.1 A/mm at a drain
voltage of 0.5 V and a transconductance of 1.5 S/mm at a drain voltage 1 V. Our
devices are a promising alternative channel material for scaled transistors
with back-end-of-line processing compatibility.
