  Tailoring electronic and optical properties of self-assembled InAs quantum
dots (QDs) is a critical limit for the design of several QD-based
optoelectronic devices operating in the telecom frequency range. We describe
how a fine control of the strain-induced surface kinetics during the growth of
vertically-stacked multiple layers of QDs allow to engineer their self
organization process. Most noticeably, the present study shows that the
underlying strain field induced along a QD stack can be modulated and
controlled by time-dependent intermixing and segregation effects occurring
after capping with GaAs spacer. This leads to a drastic increase of TM/TE
polarization ratio of emitted light, not accessible from the conventional
growth parameters. Our detailed experimental measurements supported by
comprehensive multi-million atom simulations of strain, electronic, and optical
properties, provide in-depth analysis of the grown QD samples leading us to
depict a clear picture on atomic scale phenomena affecting the proposed growth
dynamics and consequent QD polarization response.
