  Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device
manufactured using a 150-nm CMOS process are presented. An irradiation campaign
has been carried out with protons of 20 MeV and 24 MeV on several samples of a
test chip containing SPADs arrays with two different junction layouts. The dark
count rate distributions have been analyzed as a function of the displacement
damage dose. Annealing and cooling have been investigated as possible damage
mitigation approaches. We also discuss, through a space radiation simulation,
the suitability of such devices on several space mission case-studies.
