  The junction magnetoresistivity and domain phase transition were studied
between ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substrates
epitaxially by pulse laser deposit. The ferromagnetic transformation into
phase-separated (two phase) state was displayed below Tc~127 and has observed
that the lattice change discontinuously in the doped cobalt perovskites
La0.4Gd0.1Sr0.5CoO3. The Ginzburg-Landau phase field is introduced to deduce
antiferroelectric domain structure in LGSCO thin film. On the basis of the
domain structures, the phase boundary of thin film is strongly dependent on the
combination of electric-mechanical coupling. The phase transformation into
phase separated state occurs below Tc~127-128K, and have displayed that the
lattice constants change discontinuously at the transformation. The positive MR
of ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at
0.5 T is 6.05% for approximately 140K.
