  A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be
responsible for the spectacular spin-dependent recombination (SDR) in
GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding
associates this defect with two in-gap levels corresponding to the (+/0) and
(++/+) charge-state transitions. Using a spin-sensitive photo-induced current
transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy
is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band
edge, and an anomalous, negative activation energy reveals the presence of not
one but \textit{two} other states in the gap. The observations are consistent
with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a
hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge.
These observations can inform efforts to better model the SDR and the
Ga$_{\textrm{i}}$ defect's local chemical environment.
