  We study the electronic transport properties of a dual-gated bilayer graphene
nanodevice via first principles calculations. We investigate the electric
current as a function of gate length and temperature. Under the action of an
external electrical field we show that even for gate lengths up 100 Ang., a non
zero current is exhibited. The results can be explained by the presence of a
tunneling regime due the remanescent states in the gap. We also discuss the
conditions to reach the charge neutrality point in a system free of defects and
extrinsic carrier doping.
