  In this paper, we present a study of the effects of temperature on the
electron mobility in InAs/GaSb type-II superlattices (SLs) in which the band
structures and wave functions are calculated by solving the K.P Hamiltonian
using the numerical Finite Difference method. In the model the dominant
scattering mechanisms such as alloy scattering, acoustic phonon scattering and
optical phonon scattering are taken into account. The obtained electron
mobility of the type II SLs is depended on the structural parameters and
different scattering parameters. A comparison of our calculated results with
published experimental data is shown to be in good agreement.
