  A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As
with perpendicular magnetic anisotropy has been employed to determine extrinsic
and intrinsic contributions to DW resistance. The former is explained
quantitatively as resulting from a polarity change in the Hall electric field
at DW. The latter is one order of magnitude greater than a term brought about
by anisotropic magnetoresistance and is shown to be consistent with
disorder-induced misstracing of the carrier spins subject to spatially varying
magnetization.
