  Three terminal single-electron transistor devices utilizing Al/Al2O3 gate
electrodes were developed for the study of electron transport through
individual single-molecule magnets. The devices were patterned via multiple
layers of optical and electron beam lithography. Electromigration induced
breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM
can be situated. Conductance through a single Mn12(3-thiophenecarboxylate)
displays the coulomb blockade effect with several excitations within +/- 40
meV.
