  In the previous papers (Journ. of Phys. Stud. 2, 362 (1998);
cond-mat/9811213) we have studied metal-insulator transition in a generalized
Hubbard model with correlated hopping at half-filling and zero temperature. The
present paper is devoted to a further study of metal-insulator transition in
this model,in particular, an investigation of temperature-induced
metal-to-insulator transition. The dependence of energy gap on concentration of
doubly occupancy leads to increasing energy gap width with increase of
temperature. Thus narrow-band system can undergo transition from a metallic
state to an insulating state with the increase of temperature. For some values
of intra-atomic Coulomb repulsion $U$ and $w_0$ ($w_0$ is half-bandwidth) we
find the values of temperature when narrow-band material undergoes transition
from a metallic state to an insulating state. We show that at given $U/w_0$
metal-insulator transition in model with non-equivalent Hubbard sub-bands can
occur at smaller temperature than in the Hubbard model. It testifies on the
fact that taking into account of correlated hopping is important for a
consideration of metal-insulator transition problem.
