  Surface characterizations of an organophosphorus (OP) gas detector based on
chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET)
were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and
correlated with changes in the current-voltage characteristics of the devices.
KPFM measurements on FETs allow (i) to investigate the contact potential
difference (CPD) distribution of the polarized device as function of the gate
voltage and the exposure to OP traces and, (ii) to analyze the CPD hysteresis
associated to the presence of mobile ions on the surface. The CPD measured by
KPFM on the silicon nanoribbon was corrected due to side capacitance effects in
order to determine the real quantitative surface potential. Comparison with
macroscopic Kelvin probe (KP) experiments on larger surfaces was carried out.
These two approaches were quantitatively consistent. An important increase of
the CPD values (between + 399 mV and + 302 mV) was observed after the OP sensor
grafting, corresponding to a decrease of the work function, and a weaker
variation after exposure to OP (between - 14 mV and - 61 mV) was measured.
Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. The
OP molecules were essentially localized on the Si-NR confirming effectiveness
and selectivity of the OP sensor. A prototype was exposed to Sarin vapors and
succeeded in the detection of low vapor concentrations (40 ppm).
