  The electrostatic performance of p-type nanowires (NWs) made of InSb and
GaSb, with special focus on their gate capacitance behavior, is analyzed and
compared to that achieved by traditional semiconductors usually employed for
p-MOS such as Si and Ge. To do so, a self-consistent kp simulator has been
implemented to achieve an accurate description of the Valence Band and evaluate
the charge behavior as a function of the applied gate bias. The contribution
and role of the constituent capacitances, namely the insulator, centroid and
quantum ones are assessed. It is demonstrated that the centroid and quantum
capacitances are strongly dependent on the semiconductor material. We find a
good inherent electrostatic performance of GaSb and InSb NWs, comparable to
their Ge and Si counterparts making these III-Sb compounds good candidates for
future technological nodes.
