  In this work, we explore the intriguing spin-momentum locking phenomenon
within the Rashba states of antimony (Sb) films. By combining spin pumping with
the flow of an external charge current, we reveal the topological properties of
surface states in Sb films. Taking advantage of the well-defined spin
polarization of both spin-momentum-locked charge currents and spin-pumped
currents, we demonstrate precise manipulation over the direction and magnitude
of the resulting charging current, generated through the inverse
Rashba-Edelstein effect. This fascinating phenomenon is attributed to the
dynamic interaction between the accumulation of out-of-equilibrium pumped spins
and the flowing spins, intrinsically locked perpendicular to the direction of
the charge current. The results show that Sb as a promising material for basic
and applied investigation of spintronics phenomena. We believe that the
nanostructures investigated here open the way for the development of low-power
logic gates operating in the range of a few tens of microamperes.
