  The intrinsic mobility degradation coefficient, contact resistance and the
transconductance parameter of graphene field-effect transistors (GFETs) are
extracted for different technologies by considering a novel transport model
embracing mobility degradation effects within the charge channel control
description. By considering the mobility degradation-based model, a
straightforward extraction methodology, not provided before, is enabled by
applying the concept of the well-known Y-function to the \textit{I-V} device
characteristics. The method works regardless the gate device architecture. An
accurate description of experimental data of fabricated devices is achieved
with the underlying transport equation by using the extracted parameters. An
evaluation of the channel resistance, enabled by the extracted parameters here,
has been also provided.
