  We observed different temperature-dependent behaviors of steady and transient
emission properties in dry-etched InGaN/GaN multiple-quantum-well (MQW)
nanorods and the parent MQWs. To clarify the impacts of nanofabrication on the
emission properties, time-resolved photoluminescence spectra were recorded at
various temperatures with carrier density in different regimes. The confinement
of carrier transport was observed to play an important role to the emission
properties in nanorods, inducing different temperature-dependent
photoluminescence decay rates between the nanorods and MQWs. Moreover, together
with other effects, such as surface damages and partial relaxation of the
strain, the confinement effect causes faster recombination of carriers in
nanorods.
