  Efficiency of ZnO doping with Ag and N shallow acceptors, which substitute
respectively cations and anions, was investigated. First principles
calculations indicate a strong tendency towards formation of nearest neighbor
Ag-N pairs and N-Ag-N triangles. Binding of acceptors stems from the formation
of quasi-molecular bonds between dopants, and has a universal character in
semiconductors. The pairing increases energy levels of impurities, and thus
lowers doping efficiency. In the presence of donors, pairing is weaker or even
forbidden. However, hydrogen has a tendency to form clusters with Ag and N,
which favors the Ag-N aggregation and lowers the acceptor levels of such
complexes.
