  We present a theory for two recent experiments in bulk strained
semiconductors \cite{kato1, kato2} and show that a new, previously overlooked,
strain spin-orbit coupling term may play a fundamental role. We propose simple
experiments that could clarify the origin of strain-induced spin-orbit coupling
terms in inversion asymmetric semiconductors. We predict that a uniform
magnetization parallel to the electric field will be induced in the samples
studied in \cite{kato1, kato2} for specific directions of the applied electric
field. We also propose special geometries to detect spin currents in strained
semiconductors.
