  For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the
expected position of the innermost pixel detector layer of the CMS and ATLAS
experiments, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is
2$\cdot$10$^{16}$ n$_{eq}$/cm$^2$, and the IEL (Ionizing Energy Loss) dose in
the SiO$_2$ 12 MGy. The optimisation of the pixel sensors and the understanding
of their performance as a function of fluence and dose makes a radiation damage
model for TCAD simulations, which describes the available experimental data,
highly desirable. The currently available bulk-damage models are not able to
describe simultaneously the measurements of dark current (I-V),
capacitance-voltage (C-V) and charge collection efficiency (CCE) of pad diodes
for fluences $\ge 1\cdot 10^{15}$ n$_{eq}$/cm$^2$. Therefore, for the
development and validation of a new accurate bulk damage model we use I-V, C-V
and CCE measurements on pad diodes available within the CMS-HPK campaign and
data from samples irradiated recently with 24 GeV/c protons. For the
determination of the radiation-induced damage parameters we utilise the
"optimiser" of Synopsys TCAD, which allows the minimisation of the difference
between the measured and simulated I-V, C-V and CCE. The outcome of this
optimisation, the Hamburg Penta Trap Model (HPTM), provides a consistent and
accurate description of the measurements of diodes irradiated with protons in
the fluence range from 3$\cdot$10$^{14}$ n$_{eq}$/cm$^2$ to 1.3$\cdot$10$^{16}$
n$_{eq}$/cm$^2$.
