  We report a numerical analysis of the variation of Aluminium (Al) composition
in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode
(DUV-LED) and its effects on the carrier concentration, radiative
recombination, and photoluminescence (PL). Three different structures with
different Al compositions are compared and analyzed. The radiative
recombination of the DUV-LED is less efficient due to the imbalance of carrier
distribution. The findings show that the uniform electrons and holes
distribution significantly improve the radiative recombination for structure
with a thin step-shaped quantum well (QW). The simulated structure emits a
wavelength of 302.874 nm, categorized in the ultraviolet-B (UV-B) spectrum. Our
results imply that carrier uniformity in QW is required to enhance the light
intensity of DUV-LED. Remarkably, the uniformity enhances the PL intensity
drastically, at least 300% higher than the other structures.
