  The influence of individual impurities of Fe on the electronic properties of
topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy.
The microscope tip is used in order to remotely charge/discharge Fe impurities.
The charging process is shown to depend on the impurity location in the
crystallographic unit cell, on the presence of other Fe impurities in the close
vicinity, as well as on the overall doping level of the crystal. We present a
qualitative explanation of the observed phenomena in terms of tip-induced local
band bending. Our observations evidence that the specific impurity neighborhood
and the position of the Fermi energy with respect to the Dirac point and bulk
bands have both to be taken into account when considering the electron
scattering on the disorder in topological insulators.
