  The results of the simulations by Monte Carlo method of graphene with
structural defects are presented.
  The calculations are performed within an effective quantum field theory with
non-compact $3\hm + 1$--dimensional Abelian gauge field and $2\hm +
1$--dimensional Kogut-Susskind fermions. It was found that defects shift the
phase transition point semimetal-insulator towards higher values of a substrate
permittivity.
