  The combination of micro-machined technology with the Atomic Spin
Gyroscope(ASG) devices could fabricated Chip Scale Atomic Spin Gyroscope(CASG).
The core of the gyroscope is a micro-machined vapor cell which contains alkali
metal and isotope enriched noble gases such as 129Xe and 131Xe. The quadrupolar
frequency shift of 131Xe is key parameters which could affect the drift of the
ASG and is related to the material of the cell in which they are contained. In
micro machined technology, the typical utilized material is silicon. In this
article, we studied the electric quadrupolar frequency shift of 131Xe atoms
with the silicon wall of the micro-machined vapor cell. A cylinder
micro-machined vapor cell is utilized in the experiment and a large part of the
inner cell surface is composed of silicon material. We studied the temperature
dependence of the 129Xe spin relaxation and 131Xe frequency shifts to evaluate
the interaction of the nuclear spin with container wall and the alkali metal
atoms. The results show that the average twisted angle of the 131Xe nuclear
spins as they collide with the silicon wall is measured to be 29 *10^-6 rad.
The desorption energy for the 131Xe nuclear spin to escape from the silicon
surface is Esi = 0.009eV . This study could help to improve the bias stability
of the CASG which is a key parameter for the gyroscope as well as may developes
a method to study the surface property of various material.
