  Electrical generation and transduction of polarized electron spins in
semiconductors are of central interest in spintronics and quantum information
science. While spin generation in semiconductors has been frequently realized
via electrical injection from a ferromagnet, there are significant advantages
in nonmagnetic pathways of creating spin polarization. One such pathway
exploits the interplay of electron spin with chirality in electronic structures
or real space. Here, utilizing chirality-induced spin selectivity (CISS), we
demonstrate efficient creation of spin accumulation in n-doped GaAs via
electric current injection from a normal metal (Au) electrode through a
self-assembled monolayer of chiral molecules ({\alpha}-helix L-polyalanine,
AHPA-L). The resulting spin polarization is detected as a Hanle effect in the
n-GaAs, which is found to obey a distinct universal scaling with temperature
and bias current consistent with chirality-induced spin accumulation. The
experiment constitutes a definitive observation of CISS in a fully nonmagnetic
device structure and demonstration of its ability to generate spin accumulation
in a conventional semiconductor. The results thus place key constraints on the
physical mechanism of CISS and present a new scheme for magnet-free
semiconductor spintronics.
