  We study a scheme for electrical detection of the spin resonance (ESR) of a
single electron trapped near a Field Effect Transistor (FET) conduction
channel. In this scheme, the resonant Rabi oscillations of the trapped electron
spin cause a modification of the average occupancy of a shallow trap, which can
be detected through the change in the FET channel resistivity. We show that the
dependence of the channel resistivity on the frequency of the rf field can have
either peak or dip at the Larmor frequency of the electron spin in the trap.
