  The focused electron beam induced deposition (FEBID) process was used by
employing a Gemini SEM with a beam characteristic of 1keV and 24pA for the
deposition of pillars and line shaped deposits with heights between 9nm to 1um
and widths from 5nm to 0.5um. All structures have been analyzed to their
composition looking at a desired Si : O : C content of 1: 2 : 0. The C content
of the structure was found to be ~over 60% for older deposits kept in air (~at
room temperature) and less than 50% for younger deposits, only 12 hours old.
Using a deposition of Si(OEt)4 at high rates and a deposition temperature of
under 0 degC, an Si content of our structure between 10at% and 15at%
(compositional percentage) was obtained. The FEBID structures have been
deposited on Au(111) over an SiO2 wafer. The Au(111) was chosen as a substrate
for the deposition of Si(OEt)4 due to its structural and morphological
properties, with its surface granulation following a Chevron pattern, and the
Au(111) defects having a higher contribution to the change in the composition
of the final content of the structure with the increase in O ratio and a
reduction in the shapes heights.
