  Electrical properties of multi-layer graphene are subject to variations due
to random interlayer alignments. In this work we reported graphene interlayer
conductance without special layer aligning. Ohmic contacts between two graphene
layers are observed with resistance variations of more than one order. With
Raman spectroscopy we identify that the lattice angle between twisted graphene
layers is the key variation source. The angular dependence and temperature
dependence of the interlayer conductance suggest that a phonon assistant
tunneling mechanism is valid for the interlayer transport of graphene prepared
by multiple transfer process. We finally derive that the multi-layer graphene
resistance shows an exponential-like distribution due to the random interlayer
misalignments.
