  Electrical-controllable antiferromagnet tunnel junction is a key goal in
spintronics, holding immense promise for ultra-dense and ultra-stable
antiferromagnetic memory with high processing speed for modern information
technology. Here, we have advanced towards this goal by achieving an
electrical-controllable antiferromagnet-based tunnel junction of
Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn
and Co/Pt perpendicular magnetic multilayers results in the formation of
interfacial exchange bias and exchange spring in IrMn. Encoding information
states 0 and 1 is realized through the exchange spring in IrMn, which can be
electrically written by spin-orbit torque switching with high cyclability and
electrically read by antiferromagnetic tunneling anisotropic magnetoresistance.
Combining spin-orbit torque switching of both exchange spring andexchange bias,
16 Boolean logic operation is successfully demonstrated. With both memory and
logic functionalities integrated into our electrical-controllable
antiferromagnetic-based tunnel junction, we chart the course toward
high-performance antiferromagnetic logic-in-memory.
