  Flash memory based on floating gate transistor is the most widely used memory
technology in modern microelectronic applications. We recently proposed a new
concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT)
based floating gate transistor design for future nanoscale flash memory
technology. In this paper, we analyze the tunneling current mechanism in the
proposed graphene-CNT floating gate transistor. We anticipate that the proposed
floating gate transistor would adopt Fowler-Nordheim (FN) tunneling during its
programming and erase operations. In this paper, we have investigated the
mechanism of tunneling current and the factors that would influence this
current and the behavior of the proposed floating gate transistor. The analysis
reveals that FN tunneling is a strong function of the high field induced by the
control gate, and the thicknesses of the control oxide and the tunnel oxide.
