  We have developed a new magnetoelectric material based on Ga doped
{\alpha}-Fe2O3 in rhombohedral phase. The material is a canted ferromagnet at
room temperature and showing magneto-electric properties. The experimental
results of electric field controlled magnetic state provided a direct evidence
of room temperature magnetoelectric coupling in Ga doped {\alpha}-Fe2O3 system.
Interestingly, (un-doped) {\alpha}-Fe2O3 system does not exhibit any electric
field controlled magnetic exchange bias shift, but Ga doped {\alpha}-Fe2O3
system has shown an extremely high electric field induced magnetic exchange
bias shift up to the value of 1120 Oe (positive). On the other hand, in a first
time, we report the electric field controlled magnetic state switching both in
{\alpha}-Fe2O3 and in Ga doped {\alpha}-Fe2O3 systems. The switching of
magnetic state is highly sensitive to ON and OFF modes, as well as to the
change of polarity of applied electric voltage during in-field magnetic
relaxation experiments. The switching of magnetic state to upper level for
positive electric field and to down level for negative electric field indicates
that electric and magnetic orders are coupled in the Ga doped hematite system.
Such material is of increasing demand in today for multifunctional applications
in next generation magnetic sensor, switching, non-volatile memory and
spintronic devices.
