  Contamination of graphene due to residues from nanofabrication often
introduces background doping and reduces charge carrier mobility. For samples
of high electronic quality, post-lithography cleaning treatments are therefore
needed. We report that mechanical cleaning based on contact mode AFM removes
residues and significantly improves the electronic properties. A mechanically
cleaned dual-gated bilayer graphene transistor with hBN dielectrics exhibited a
mobility of ~36,000 cm2/Vs at low temperature.
