  Giant magnetoresistance (GMR) material has great potential as next generation
magnetic field sensing devices, have magnetic properties and high electrical
potential to be developed into various applications such as: magnetic field
sensor measurements, current measurements, linear and rotational position
sensor, data storage, head recording, and non-volatile magnetic random access
memory (MRAM). Today, the new GMR materials based on organic material obtained
after allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organic
light-emitting diodes). This organic material is used as a spacer layer in GMR
devices with spin-valve structures. Traditionally, metals and semiconductors
are used as a spacer layer in spin-valve. However, several factors such as spin
scattering caused by large atoms of the spacer material and the interface
scattering of ferromagnetic with a spacer, will limit the efficiency of
spin-valve. In this paper, we describe a new GMR materials based on organic
material that we have developed.
