  Irradiation with high-energy particles has recently emerged as an effective
tool for tailoring the properties of two-dimensional transition metal
dichalcogenides. In order to carry out an atomically-precise manipulation of
the lattice, a detailed understanding of the beam-induced events occurring at
the atomic scale is necessary. Here, we investigate the response of
$1T'$-MoS$_2$ to the electron irradiation by $ab$ $initio$ molecular dynamics
means. Our simulations suggest that an electron beam with energy smaller than
75 keV does not result in any knock-on damage. The displacement threshold
energies are different for the two nonequivalent sulfur atoms in $1T'$-MoS$_2$
and strongly depend on whether the top or bottom chalcogen layer is considered.
As a result, a careful tuning of the beam energy can promote the formation of
ordered defects in the sample. We further discuss the effect of the electron
irradiation in the neighborhood of a defective site, the mobility of the sulfur
vacancies created and their tendency to aggregate. Overall, our work provides
useful guidelines for the imaging and the defect engineering of $1T'$-MoS$_2$
using electron microscopy.
