  We report on the successful synthesis and low-temperature electron transport
investigations of a new form of material - Bi2O2Se semiconducting nanowires.
Gate-tunable 0- and $\pi$-h/e (h is the Planck constant and e the elementary
charge) periodic resistance oscillations in longitudinal magnetic field were
observed unexpectedly, demonstrating novel quasi-ballistic, phase-coherent
surface states in Bi2O2Se nanowires. By reaching a very good agreement between
the calculated density of states and the experimental data, we clarified the
mechanism to be the one dimensional subbands formed along the circumference of
the nanowire rather than the usually considered Aharonov-Bohm interference. A
qualitative physical picture based on downward band bending associated with the
complex band structure is proposed to describe the formation of the surface
states.
