  We investigate the zero and finite temperature transport properties of a
quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a
magnetic field, taking into account many-body effects via a local-field
correction. We consider the surface roughness, roughness-induced piezoelectric,
remote charged impurity and homogeneous background charged impurity scattering.
The effects of the quantum well width, carrier density, temperature and
local-field correction on resistance ratio are investigated. We also consider
the dependence of the total mobility on the multiple scattering effect.
