  We have investigated the tunneling transport of mono- and few-layers of MnPS3
by using conductive atomic force microscopy. Due to the band alignment of
indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky
junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples
with varying thickness. Using the FNT model and assuming the effective electron
mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV
and the dielectric breakdown strength as 5.41 MV/cm.
