  GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric
and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal
conditions are optimized for the source/drain impurity activation. Temperature
dependent electrical characteristics are investigated. Different electrical
behaviors are observed in two different temperature regions and the mechanisms
underneath are proposed. Off-state drain current is generation current
dominated in the low temperature regions and is diffusion current dominated in
the high temperature regions.
