  We present a study of the structural and electronic properties of highly
doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman
method. Lattice structural characterizations by X-ray diffraction, scanning
tunneling microscopy, and Raman spectroscopy confirmed the high quality of the
as-grown single crystals. The topological surface states in the electronic band
structure were directly re- vealed by angle-resolved photoemission
spectroscopy. Transport measurements showed that the conduction was dominated
by the bulk carriers and confirmed a previously observed bulk quantum Hall
effect in such highly doped Bi2Se3 samples. We briefly discuss several possible
strategies of reducing bulk conductance.
