  The last few decades has seen the rapid growth of interest in the bulk
perovskite-type transition metal oxides SrVO$_3$ and SrTiO$_3$. The electronic
configuration of these perovskites differs by one electron associated to the
transition metal species which gives rise to the drastically different
electronic properties. Therefore, it is natural to look into how the electronic
structure transitions between these bulk structures by using doping.
Measurements of the substitutional doped SrTi$_{\rm 1-x}$V$_{\rm x}$O$_3$ shows
an metal-insulator transition (MIT) as a function of doping. By using supercell
density functional theory with dynamical mean field theory (DFT+DMFT), we show
that the MIT is indeed the result of the combination of local electron
correlation effects (Mott physics) within the t$_{\rm 2g}$ orbitals and the
atomic site configuration of the transition metals which may indicate
dependence on site disorder. SrTi$_{\rm 1-x}$V$_{\rm x}$O$_3$ may be an ideal
candidate for benchmarking cutting-edge Mott-Anderson models of real systems.
We show that applying an effective external perturbation on SrTi$_{\rm
1-x}$V$_{\rm x}$O$_3$ can switch the system between the insulating and metallic
phase, meaning this is a bulk system with the potential use in Mott electronic
devices.
