  This work reports the dynamics of transient hole doping in epitaxial graphene
devices by using nitric acid as an adsorbent. The timescales associated with
corresponding desorption processes are extracted from the data. The
understanding of reversible hole doping without gating is of crucial importance
to those fabricating devices with a particular functionality. Measurements of
the electrical and optical properties of several devices post-exposure were
performed with transport temperatures between 300 K and 1.5 K. Ambient
conditions are applied to non-transport measurements to replicate the most
likely laboratory conditions for handling devices using this doping method. The
relevant timescales from transport measurements are compared with results from
Raman spectroscopy measurements.
