  We consider the effect of uniaxial strain on ballistic transport in graphene,
across single and multiple tunneling barriers. Specifically, we show that
applied strain not only shifts the position of the Dirac points in reciprocal
space, but also induces a deformation of the Dirac cones, and that both effects
are of the same order on the applied strain intensity. We therefore study the
deviations thereby induced on the angular dependence of the tunneling
transmission across a single barrier, as well as on the conductivity and Fano
factor across a single barrier and a superstructure of several, periodically
repeated, such sharp barriers. Our model is generalized to the case of
nonuniform barriers, where either the strain or the gate potential profiles may
depend continuously on position. This should afford a more accurate description
of realistic `origami' nanodevices based on graphene, where `foldings' are
expected to involve several lattice spacings.
