  We have studied the magnetotransport properties of a Sb$_2$Se$_2$Te single
crystal. Magnetoresistance (MR) is maximum when the magnetic field is
perpendicular to the sample surface and reaches to a value of 1100\% at $B$=31
T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations
above $B$=15 T. The frequency spectrum of SdH oscillations consists of three
distinct peaks at $\alpha$=32 T, $\beta$=80 T and $\gamma$=117 T indicating the
presence of three Fermi surface pockets. Among these frequencies, $\beta$ is
the prominent peak in the frequency spectrum of SdH oscillations measured at
different tilt angles of the sample with respect to the magnetic field. From
the angle dependence $\beta$ and Berry phase calculations, we have confirmed
the trivial topology of the $\beta$-pocket. The cyclotron masses of charge
carriers, obtained by using the Lifshitz-Kosevich formula, are found to be
$m^{*}_{\beta}=0.16m_o$ and $m^{*}_{\gamma}=0.63m_o$ for the $\beta$ and
$\gamma$ bands respectively. Large MR of Sb$_2$Se$_2$Te is suitable for
utilization in electronic instruments such as a computer hard disc, high field
magnetic sensors, and memory devices.
