  Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and
other materials are core to emerging optical and electronic devices. Their
direct fabrication is, however, challenged as the vdW forces are weak and
cannot be tuned to accommodate integration of arbitrary layers without
solvents, sacrificial-layers or high-temperatures, steps that can introduce
damage. To address these limitations, we introduce a single-step 2D
material-to-device integration approach in which forces promoting transfer are
decoupled from the vdW forces at the interface of interest. We use this
adhesive matrix transfer to demonstrate conventionally-forbidden direct
integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics
(SiO2, Al2O3), and scalable, aligned heterostructure formation, both
foundational to device development. We then demonstrate a single-step
integration of monolayer-MoS2 into arrays of transistors. With no exposure to
polymers or solvents, clean interfaces and pristine surfaces are preserved,
which can be further engineered to demonstrate both n- and p-type behavior.
Beyond serving as a platform to probe the intrinsic properties of sensitive
nanomaterials without the influence of processing steps, our technique allows
efficient formation of unconventional device form-factors, with an example of
flexible transistors demonstrated.
