  We consider the separate spin channel contributions to the charge conductance
in superconducting/ferromagnetic spin valve $F_1/N/F_2/S$ structures. We find
that the up- and down-spin conductance contributions may have a very different
behavior in the subgap bias region (i.e. there is a spin-split conductance).
This leads to a subgap %EM2 added spin-split conductance peak in the total
conductance. This peak behavior, which can be prominent also in $N/F/S$
systems, is strongly dependent, in a periodic way, on the thickness of the
intermediate ferromagnetic layer. We study this phenomenon using a numerical
self consistent method, with additional insights gained from an approximate
analytic calculation for an infinite $N/F/S$ structure. We study also the
angular dependence on the relative magnetization angle between $F_1$ and $F_2$
of both the spin-split and the total conductance. We do so for realistic
material parameters and layer thicknesses relevant to experimental studies on
these devices. We also find that the spin-split conductance is highly dependent
on the interfacial scattering in these devices, and we carefully include these
effects for realistic systems. A strong valve-effect is found for the angularly
dependent subgap peak conductance that is largely independent on the scattering
and may prove useful in actual realizations of a superconducting spin valve
device.
