  Identifying the behavior of photoexcited carriers is one method for
empirically boosting their transfer efficiencies in doped double quantum dots
(DQDs) photocells. The photoexcited carriers transfer qualities were assessed
in this study by the output current, power, and output efficiency in the
multi-photon absorption process for a doped DQDs photocell, and an optimization
technique is theoretically obtained for this proposed photocell model. The
results show that some structure parameters caused by doping, such as gaps,
incoherent tunneling coupling, and symmetry of structure between two vertically
aligned QDs, can remarkably control the photoexcited carriers transfer
properties, and that slightly increasing the ambient temperature around room
temperature is beneficial to the transfer performance in this doping DQDs
photocell model. Thus, our scheme proves a way to optimized strategies for DQDs
photocell.
