  Most commercial high-temperature superconducting coated conductors based on
ion beam assisted MgO deposited templates use $\mathrm{LaMnO_3}$ (LMO) films as
the terminating buffer layer. In contrast, coated conductors based on inclined
substrate deposition (ISD)-MgO technology are still produced with homoepitaxial
(homoepi)-MgO as the cap layer. In this work we report on the deposition of LMO
buffer layers on ISD-MgO/homoepi-MgO by electron beam physical vapor
deposition. The growth parameters of textured LMO films were studied
systematically and their properties were optimized regarding the critical
current densitiy ($J_\mathrm{c}$) of the subsequently deposited
$\mathrm{DyBa_2Cu_3O}_{\mathrm{7-}\delta}$ (DyBCO) superconducting films. LMO
films without outgrowths at the surface were obtained at growth rates of up to
$4\,\mathrm{\r{A}/s}$. Despite the formation of non-stoichiometric LMO films
containing $59\,\%$ La, single-phase films were obtained at substrate
temperatures below $775^{\circ}\mathrm{C}$ and at oxygen partial pressures of
up to $4\times10^{-4}\,\mathrm{mbar}$ due to a large homogeneity region towards
La. The $J_\mathrm{c}$ values of DyBCO films deposited on LMO were found to be
independent of the LMO thickness in a range from $50\,\mathrm{nm}$ to
$450\,\mathrm{nm}$. DyBCO films on LMO reach
$J_\mathrm{c}=0.83\,\mathrm{MA/cm^2}$ at $77\,\mathrm{K}$ in zero applied
field. This value is up to $30\,\%$ higher than those of DyBCO films grown
directly on homoepi-MgO. The wide range of LMO growth parameters and higher
$J_\mathrm{c}$ values of DyBCO on LMO compared to DyBCO on homoepi-MgO make
this material attractive for its use in manufacturing coated conductors based
on ISD-MgO technology.
