  We present a theoretical description of the electronic properties of graphene
in the presence of disorder, electron-electron interactions, and particle-hole
symmetry breaking. We show that while particle-hole asymmetry, long-range
Coulomb interactions, and extended defects lead to the phenomenon of
self-doping, local defects determine the transport and spectroscopic
properties. Our results explain recent experiments in graphitic devices and
predict new electronic behavior.
