  Boron arsenide (BAs) has been the least investigated cubic III-V compound,
but it has recently attracted significant attention since the confirmation of
its unusually high thermal conductivity above 1000 W/m-K. However, determining
how to achieve growth of a BAs single crystal on the centimeter scale remains
unsolved, which strongly limits further research into, and potential
applications of, this interesting material. Here we report our technique to
grow a 7-mm-long BAs single crystal via the chemical vapor transport method by
applying an additional nucleation site. The different thermal conductivity
values obtained from BAs single crystals grown on nucleation sites of different
compositions show the importance of choosing the proper nucleation-site
material. We believe these findings will inspire further research into the
growth of this unique semiconductor.
