  We have fabricated field effect transistors from carbon nanotubes using a
novel selective placement scheme. We use carbon nanotubes that are covalently
bound to molecules containing hydroxamic acid functionality. The functionalized
nanotubes bind strongly to basic metal oxide surfaces, but not to silicon
dioxide. Upon annealing, the functionalization is removed, restoring the
electronic properties of the nanotubes. The devices we have fabricated show
excellent electrical characteristics.
