  Simulations are carried out based on the dynamical mean-field theory (DMFT)
in order to investigate the properties of correlated thin films for various
values of the chemical potential, temperature, interaction strength, and
applied transverse electric field. Application of a sufficiently strong field
to a thin film at half-filling leads to the appearance of conducting regions
near the surfaces of the film, whereas in doped slabs the application of a
field leads to a conductivity enhancement on one side of the film and a gradual
transition to the insulating state on the opposite side. In addition to the
inhomogeneous DMFT, an independent layer approximation (ILA) is considered, in
which the properties of each layer are approximated by a homogeneous bulk
environment. A comparison between the two approaches reveals that the less
expensive ILA results are in good agreement with the DMFT approach, except
close to the metal-to-insulator transition points and in the layers immediately
at the film surfaces. The hysteretic behavior (memory effect) characteristic of
the bulk doping driven Mott transition persists in the slab.
