  We demonstrate wafer-scale integration of single electron memories based on
carbon nanotube field effect transistors (cnfets) by a complete self assembly
process. First, a dry self assembly based on a Hot Filament assisted Chemical
Vapor Deposition technique allows both localized growth and in situ electrical
connection of carbon nanotubes on predefined catalytic electrodes. The
semiconducting carbon nanotubes integration yield can exceed 50% for a batch.
Secondly, a wet self-assembly attaches single 30 nm-diameter gold bead in the
nanotube vicinity via chemical functionalization. The bead acts as the memory
storage node while the cnfet operated in the subthreshold regime is an
electrometer having exponential gain. Below 50 K, the transfer characteristics
of some functionalized cnfets show highly reproducible hysteretical steps whose
height can reach one decade of current. Evaluation of the capacitance confirms
these current steps originate from single electron transfers between the bead
and the nanotubes with a time retention exceeding 550s at 1.5K.
