  Concave-shaped 4H-SiC {0001} surfaces have been prepared and reconstructed in
pure liquid silicon for investigating the structure and morphology evolution of
the SiC surface as a function of both azimuthal and off-axis angles. Different
surface characteristics are revealed on two polar surfaces where only the Si
face reflects the six-fold symmetry of 4H-SiC crystal. On the Si face, the step
bunching along the <1100> direction is stronger than the <1120> direction,
which is related to the bonding state at the step edge. More significant step
bunching is observed on the C face whereas it is not sensitive to azimuthal
orientation. The extent of step faceting is stronger on the Si face. The step
faceting is independent of the off angle on both polarities of SiC {0001}
surfaces.
