  We study the effect of gate-induced electric fields on the properties of
semiconductor-superconductor hybrid nanowires which represent a promising
platform for realizing topological superconductivity and Majorana zero modes.
Using a self-consistent Schr\"odinger-Poisson approach that describes the
semiconductor and the superconductor on equal footing, we are able to access
the strong tunneling regime and identify the impact of an applied gate voltage
on the coupling between semiconductor and superconductor. We discuss how
physical parameters such as the induced superconducting gap and Land\'e
g-factor in the semiconductor are modified by redistributing the density of
states across the interface upon application of an external gate voltage.
Finally, we map out the topological phase diagram as a function of magnetic
field and gate voltage for InAs/Al nanowires.
