  We investigated current-induced effective magnetic field Heff in
half-metallic oxide La0.67Sr0.33MnO3 (LSMO) films with various thicknesses by
using the planar Hall effect. Applying in-plane current to the LSMO films
exerted an in-plane Heff orthogonal to the current direction on magnetization.
The Heff magnitude increased with increasing current magnitude, and the
direction reversed when the applied current switched to opposite sign. Assuming
that a 6.5-u.c. insulating layer is created in the LSMO, the values of Heff
observed in devices with three different LSMO thicknesses were almost scaled
with current density, evaluated from the effective LSMO thickness excluding the
insulating layer, suggesting that Heff is induced in the LSMO bulk.
