  We present a time-resolved optical study of the dynamics of carriers and
phonons in Ga_{1-x}Mn_{x}As layers for a series of Mn and hole concentrations.
While band filling is the dominant effect in transient optical absorption in
low-temperature-grown (LT) GaAs, band gap renormalization effects become
important with increasing Mn concentration in Ga_{1-x}Mn_{x}As, as inferred
from the sign of the absorption change. We also report direct observation on
lattice vibrations in Ga1-xMnxAs layers via reflective electro-optic sampling
technique. The data show increasingly fast dephasing of LO phonon oscillations
for samples with increasing Mn and hole concentration, which can be understood
in term of phonon scattering by the holes.
