  Magnetic properties of thin (Ga,Mn)As layers improve during annealing by
out-diffusion of interstitial Mn ions to a free surface. Out-diffused Mn atoms
participate in the growth of a Mn-rich surface layer and a saturation of this
layer causes an inhibition of the out-diffusion. We combine high-resolution
x-ray diffraction with x-ray absorption spectroscopy and a numerical solution
of the diffusion problem for the study of the out-diffusion of Mn interstitials
during a sequence of annealing steps. Our data demonstrate that the
out-diffusion of the interstitials is substantially affected by the internal
electric field caused by an inhomogeneous distribution of charges in the
(Ga,Mn)As layer.
