  We have determined the spin-orbit scattering length of two-dimensional
layered 2H-TaSe2 metallic crystals by detailed characterization of the weak
anti-localization phenomena in this strong spin-orbit interaction material. By
fitting the observed magneto-conductivity, the spin-orbit scattering length for
2H-TaSe2 is determined to be 17 nm in the few-layer films. This small
spin-orbit scattering length is comparable to that of Pt, which is widely used
to study the spin Hall effect, and indicates the potential of TaSe2 for use in
spin Hall effect devices. In addition to strong spin-orbit coupling, a material
must also support large charge currents to achieve spin-transfer-torque via the
spin Hall effect. Therefore, we have characterized the room temperature
breakdown current density of TaSe2 in air, where the best breakdown current
density reaches 3.7$\times$10$^7$ A/cm$^2$. This large breakdown current
further indicates the potential of TaSe2 for use in spin-torque devices and
two-dimensional device interconnect applications.
