  Monolithically combining silicon nitride (SiNx) photonics technology with
III-V active devices could open a broad range of on-chip applications spanning
a wide wavelength range of ~400-4000 nm. With the development of nitride,
arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD)
active regions, the wavelength palette of integrated III-V lasers on Si
currently spans from 400 nm to 11 {\mu}m with a crucial gap in the
red-wavelength regime of 630-750 nm. Here, we demonstrate the first red InGaP
QW and far-red InP QD lasers monolithically grown on CMOS compatible Si (001)
substrates with continuous-wave operation at room temperature. A low-threshold
current density of 550 A/cm2 and 690 A/cm2 with emission at 680-730 nm was
achieved for QW and QD lasers on Si, respectively. This work takes the first
vital step towards integration of visible red lasers on Si allowing the
utilization of integrated photonics for applications including biophotonic
sensing, quantum computing, and near-eye displays.
