  Terahertz Raman spectroscopy was performed on high-mobility organic
single-crystal semiconductors, by which the phonon energy at the Gamma point
was qualified as a function of external uniaxial strain. The observation of
peak shifts in Raman modes under uniaxial strain revealed that application of
an external strain can effectively tune the intermolecular vibration that
particularly correlates electron-phonon coupling. Terahertz Raman spectroscopy
conducted in conjunction with molecular dynamics simulation provides an
in-depth understanding of the recently discovered very large strain effect on
charge conduction in high-mobility organic semiconductors.
