  A nonperturbative dynamical coupling approach based on tight-binding
molecular dynamics is used to evaluate the electron-ion (electron-phonon)
coupling parameter in irradiated semiconductors as a function of the electronic
temperature up to ~25,000 K. The method accounts for arbitrary electronic
distribution function via the Boltzmann equation, enabling a comparative
analysis of various models: fully equilibrium electronic distribution,
band-resolved local equilibria (distinct temperatures and chemical potential of
electrons in the valence and the conduction band), and a full nonequilibrium
distribution. It is demonstrated that the nonequilibrium produces the
electron-phonon coupling parameter different by at most ~35% from its
equilibrium counterpart for identical deposited energy density, allowing to use
the coupling parameter as a function of the single electronic equivalent (or
kinetic) temperature. The following 14 semiconductors are studied here - group
IV: Si, Ge, SiC; group III-V: AlAs, AlP, GaP, GaAs, GaSb; oxides: ZnO, TiO2,
Cu2O; layered PbI2; ZnS and B4C.
