  Two-dimensional (2D) materials are a new class of materials with interesting
physical properties and applications ranging from nanoelectronics to sensing
and photonics. In addition to graphene, the most studied 2D material,
monolayers of other layered materials such as semiconducting dichalcogenides
MoS2 or WSe2 are gaining in importance as promising channel materials for
field-effect transistors (FETs) and phototransistors. However, it is unclear
that how the specific process of electron transport is affected by temperature.
So, nowadays the electron dynamics of single-layer semiconductor cannot be
understood fundamentally. Here, we develop an analytical theory distinguishing
from traditional energy band theory, backed up by Monte-Carlo simulations, that
predicts the process of electron transport and the effect of temperature on the
electron transport in the single-layer semiconductor. In this paper, A new
model is built to deal with electron transporting in the sing-layer
semiconductor. The resistance is decided by the barrier rather than the
electron scattering in the single-layer semiconductor, which is macroscopic
quantum effect. Electron transport in FETs with different dielectric
configurations are investigated at different temperatures and a new control
factor that is decided by top-gate voltage or bottom-gate voltage is introduced
to describe the effect of gate voltage on the electron transport in 2D
semiconductor. The results of simulation show the drain current is mainly
determined by some elements, such as temperature, top-gate voltage, bottom-gate
voltage and source-drain voltage.
