  Wide-bandgap perovskite stannates are of interest for the emergent all-oxide
transparent electronic devices due to their unparalleled room temperature
electron mobility. Considering the advantage of amorphous material in
integrating with non-semiconductor platforms, we herein reported the optical
and electronic properties in the prototypical stannate, amorphous barium
stannate (BaSnO3) thin films, which were deposited at room temperature and
annealed at various temperatures. Despite remaining amorphous status, with
increasing the annealing temperature, the defect level within amorphous BaSnO3
thin films could be suppressed.
