  The stress-mediated diffusion of nonequilibrium point defects from the
surface to the bulk of the semiconductor is investigated by computer
simulation. It is supposed that point defects are generated in the surface
region by ion implantation and during diffusion pass over the local region of
elastic stresses because the average defect migration length is greater than
the thickness and depth of the strained layer. Within the strained layer point
defect segregation or heavily defect depletion occur if defect drift under
stresses is directed respectively in or out of the layer. On the other hand,
the calculations show that, in contrast to the case of local defect sink, the
local region of elastic stresses practically does not change the distribution
of defects beyond this region if there is no generation/absorption of point
defects within the strained layer.
