  A dynamic systems model is proposed describing memory resistors which include
a filament conductive bridge. In this model the system state is defined by both
a dynamic tunneling barrier (associated with the filament-electrode gap) and a
dynamic Schottky barrier (associated with the electron depletion width
surrounding the filament-electrode gap). A general model is formulated which
may be applicable to many different forms of memory resistor materials. The
frequency response of the model is briefly discussed.
  Keywords- mem-resistor, non-linear dynamic systems, RRAM, ReRAM, Schottky
junction, tunneling junction
