  We review the effect of uniaxial strain on the low-energy electronic
dispersion and Landau level structure of bilayer graphene. Based on the
tight-binding approach, we derive a strain-induced term in the low-energy
Hamiltonian and show how strain affects the low-energy electronic band
structure. Depending on the magnitude and direction of applied strain, we
identify three regimes of qualitatively different electronic dispersions. We
also show that in a weak magnetic field, sufficient strain results in the
filling factor ff=+-4 being the most stable in the quantum Hall effect
measurement, instead of ff=+-8 in unperturbed bilayer at a weak magnetic field.
To mention, in one of the strain regimes, the activation gap at ff=+-4 is, down
to very low fields, weakly dependent on the strength of the magnetic field.
