  Single quantum dots and other materials exhibit irregular switching between
on and off states; these on-off states follow power-law statistics giving rise
to 1/f noise. We transfer this phenomenon (also referred to as on-off
intermittency) to the generation and recombination (g-r) process in
semiconductor materials. In addition to g-r noise we obtain 1/f noise that can
be provided in the form of the Hooge relation. The predicted Hooge coefficient
depends on the parameters of the g-r noise and on the parameters of the
intermittency. Due to the power-law distribution of the on-times, the
coefficient for intermittency shows a smooth dependence on time t. We also
suggest an alternative form of the 1/f noise formula by Hooge relating the 1/f
noise to the number of centers (such as donor or trap atoms) rather than to the
number of charge carriers as defined by Hooge.
