  The reliability of power semiconductor switches is important when considering
their vital role in power electronic converters for downhole subsea
applications. Respect to technology advancements in material sciences, power
MOSFETs with wide band gap materials have been proposed such as silicon carbide
(SiC) and gallium nitride (GaN) as an alternative to existing silicon (Si)
based MOSFETs and IGBTs. However, reliability analysis should be performed
before substituting SiC-MOSFETs in the place of existing Si-MOSFETs and IGBTs.
Due to costly equipment of experimental test setup for accelerated life test, a
good reliable and precise simulation-based test bench should be used to test
the life test procedure before implementing actual hardware. Therefore, this
paper introduces a power cycle (PC) test bench for accelerated life testing for
reliability assessment of SiC-MOSFET in harsh offshore environment. The
introduced test bench is a simulation-based of power switch in SimScape and
LTspice and has been validated with datasheet of 1.2 kV SiC-MOSFET,
CAS300M12BM2 by CREE. Preliminary hardware circuits are also shown for further
experimental tests. The captured data from the Device-Under-Test (DUT) in
different ambient temperatures are envisioned and provide critical information
about the failure mechanisms and lifetime characteristics of power devices. The
provided lifetime characteristics data of SiC-MOSFET can be used to
statistically estimate the Remaining-Useful-Lifetime (RUL) of component in a
real application such as downhole motor drives.
