  We discuss the features of a crystalline undulator of the novel type based on
the effect of a planar channeling of ultra-relativistic electrons in a
periodically bent crystals. It is demonstrated that an electron-based undulator
is feasible in the tens of GeV range of the beam energies, which is noticeably
higher than the energy interval allowed in a positron-based undulator.
Numerical analysis of the main parameters of the undulator as well as the
characteristics of the emitted undulator radiation is carried out for 20 and 50
GeV electrons channeling in diamond and silicon crystals along the (111)
crystallographic planes.
