  The study of the effects of scaling on magnetic tunnel junction (MTJ) devices
has become an important topic in the field of spin-based memory devices. Here,
we investigate the effect of elastic dephasing on trilayer and pentalayer MTJ
considered at small transverse cross-sectional areas using the non-equilibrium
Green's function spin transport formalism. We consider the structures with and
without dephasing effects and clearly point out as to how the tunnel
magnetoresistance effect gets affected by dephasing. We attribute the trends
noted by analyzing the transmission spectra and hence the currents across the
devices. Although dephasing affects the TMR values for both devices, we note
that the obtained TMR values are still in a reasonable range that may not
hinder their usability for practical applications.
