  The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium
(SiGe) layers has been analyzed by experiment and simulation. Predictive
simulation using drift-diffusion formalism and self-consistent
quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K.
This modeling approach can be used for different, graded and constant, SiGe
profiles,. It is also capable of predicting the influence of background
auto-doping on the TCR of the detectors
