  Pattern matching between target electron backscatter patterns (EBSPs) and
dynamically simulated EBSPs was used to determine the pattern centre (PC) and
crystal orientation, using a global optimisation algorithm. Systematic analysis
of error and precision with this approach was carried out using dynamically
simulated target EBSPs with known PC positions and orientations. Results showed
that the error in determining the PC and orientation was < 10$^{-5}$ of pattern
width and < 0.01{\deg} respectively for the undistorted full resolution images
(956x956 pixels). The introduction of noise, optical distortion and image
binning was shown to have some influence on the error although better angular
resolution was achieved with the pattern matching than using conventional Hough
transform-based analysis. The accuracy of PC determination for the experimental
case was explored using the High Resolution (HR-) EBSD method but using
dynamically simulated EBSP as the reference pattern. This was demonstrated
through a sample rotation experiment and strain analysis around an indent in
interstitial free steel.
