  We calculate the Hall conductivity $\sig_{xy}$ and resistivity $\rho_{xy}$ of
a granular system at large tunneling conductance $g_{T}\gg 1$. We show that in
the absence of Coulomb interaction the Hall resistivity depends neither on the
tunneling conductance nor on the intragrain disorder and is given by the
classical formula $\rho_{xy}=H/(n^* e c)$, where $n^*$ differs from the carrier
density $n$ inside the grains by a numerical coefficient determined by the
shape of the grains. The Coulomb interaction gives rise to logarithmic in
temperature $T$ correction to $\rho_{xy}$ in the range $\Ga \lesssim T \lesssim
\min(g_T E_c,\ETh)$, where $\Ga$ is the tunneling escape rate, $E_c$ is the
charging energy and $\ETh$ is the Thouless energy of the grain.
