  We report experimental evidence of excitonic spin-splitting, in addition to
the conventional Zeeman effect, produced by a combination of the Rashba
spin-orbit interaction, Stark shift and charge screening. The
electric-field-induced modulation of the spin-splitting are studied during the
charging and discharging processes of p-type GaAs/AlAs double barrier resonant
tunneling diodes (RTD) under applied bias and magnetic field. The abrupt
changes in the photoluminescence, with the applied bias, provide information of
the charge accumulation effects on the device.
