  A microscopic theory for the luminescence of ordered semiconductors is
modified to describe photoluminescence of strongly disordered semiconductors.
The approach includes both diagonal disorder and the many-body Coulomb
interaction. As a case study, the light emission of a correlated plasma is
investigated numerically for a one-dimensional two-band tight-binding model.
The band structure of the underlying ordered system is assumed to correspond to
either a direct or an indirect semiconductor. In particular, luminescence and
absorption spectra are computed for various levels of disorder and sample
temperature to determine thermodynamic relations, the Stokes shift, and the
radiative lifetime distribution.
