  In this work, we propose a novel integration in order to significantly reduce
the High Resistance State vari-ability and to improve thermal stability in
Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device
featuring a metallic liner, acting as a parallel resistance, is presented. To
assess the effect of this solution, we compare the results with a standard
OxRRAM cell structure. A very good stability of the resistive states, both in
endurance and temperature, is highlighted and explained thanks to a conductive
fila-ment based model.
