  We model the operation and readout sensitivity of two current-modulated
magnetoplasmonic devices which exploit spin Hall effect-like behavior as a
function of their device and material parameters. In both devices, current
pulses are applied to an electrically-isolated stack, containing an active
layer (either a metal with large spin orbit coupling or a topological
insulator) embedded within a plasmonic metal (Au). The first device, composed
of a ferromagnet and the active layer, illustrates a plasmonic readout scheme
for detecting magnetic reorientation driven by current-induced spin transfer
torques. The plasmonic readout of these current-modulated non-volatile states
may facilitate the development of plasmon-based memory or logic devices. The
second device, containing only the active layer, explores the magnetoplasmonic
readout conditions required to directly measure the spin accumulation in these
materials. The estimated thickness-dependent sensitivity agrees with recent
experimental magneto-optical Kerr effect observations.
