  The hole-doped manganite La0.7Ca0.3MnO3 and the electron-doped manganite
La0.7Ce0.3MnO3 undergo an insulator to metal transition at around 250 K, above
which both behave as a polaronic semiconductor. We have successfully fabricated
an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is
an insulator. At room temperature, i.e. in the semiconducting regime, it
exhibits asymmetric current-voltage (I-V) characteristics akin to a p-n diode.
The observed asymmetry in the I-V characteristics disappears at low
temperatures where both the manganite layers are metallic. To the best of our
knowledge, this is the first report of such a p-n diode, using the polaronic
semiconducting regime of doped manganites.
