  Topologically protected chiral skyrmion is an intriguing spin texture, which
has attracted much attention because of fundamental research and future
spintronic applications. MnSi with the non-centrosymmetric structure is
well-known material hosting skyrmion phase. To date, preparation of MnSi
crystals has been investigated by using special instruments with ultrahigh
vacuum chamber. Here, we introduce a facile way to grow MnSi films on sapphire,
which is in relatively low vacuum environment of conventional magnetron
sputtering. Magnetotransport properties including Hall resistivity measurements
allow to confirm the existence of skyrmion phase in MnSi film. Because as-grown
MnSi films on sapphire has polycrystalline nature, the emergent features of
skyrmion phase are limited and complicated. However, we observed the stable
skyrmion phase in a broad range of temperatures and magnetic fields, which is
explained by phenomenological scaling analyses of Hall resistivities
contribution. Our findings provide not only a general way to prepare the
materials possessing skyrmion phase, but also insight into further research to
stimulate more degrees of freedom in our inquisitiveness.
