  The influence of hydride exposure on previously unreported self-assembled
InP(As) nanostructures is investigated, showing an unexpected morphological
variability with growth parameters, and producing a large family of InP(As)
nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like
structures to double dot in a ring ensembles. Moreover, preliminary
microphotoluminescence data are indicating the capped rings system as an
interesting candidate for single quantum emitters at telecom wavelengths,
potentially becoming a possible alternative to InAs QDs for quantum technology
and telecom applications.
