  We present electrical data of silicon single electron devices fabricated with
CMOS techniques and protocols. The easily tuned devices show clean Coulomb
diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In
addition, the devices exhibit robust transistor characteristics including
uniformity within about 0.5 V in the threshold voltage, gate resistances
greater than 10 G{\Omega}, and immunity to dielectric breakdown in electric
fields as high as 4 MV/cm. These results highlight the benefits in device
performance of a fully CMOS process for single electron device fabrication.
