  We have measured the temperature and magnetic field dependence of the Hall
coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene
samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range
0.1 to 200~K and up to 0.2~T field. The temperature dependence of the
longitudinal resistance of two of the samples indicates the contribution from
embedded interfaces running parallel to the graphene layers. At low enough
temperatures and fields $R_{\rm H}$ is positive in all samples, showing a
crossover to negative values at high enough fields and/or temperatures in
samples with interfaces contribution. The overall results are compatible with
the reported superconducting behavior of embedded interfaces in the graphite
structure and indicate that the negative low magnetic field Hall coefficient is
not intrinsic of the ideal graphite structure.
