  Temperature-dependent thermoelectric power (TEP) in semiconductor crystals
and crystal structures containing an electron-vibrational centers (EVC) was
investigated in this article. The TEP contain narrow pius at Debye temperatures
for different phonons. In thin epitaxial layers on substrates such pius exist
at Debye temperatures of substrates phonons. These pius existence imposable to
explain on basis of known TEP theory but it may be explained by the phonon drag
of electrons (PDE) effect. In this connection there is the necessity to change
traditional point of view on the PDE effect existence only at low temperatures
and expand the PDE theory on case of strong electron-phonon coupling provided
by EVC at high temperatures.
