  Joint progresses in Cd(Zn)Te detectors, microelectronics and interconnection
technologies open the way for a new generation of instruments for physics and
astrophysics applications in the energy range from 1 to 1000 keV. Even working
between -20 and 20 degrees Celsius, these instruments will offer high spatial
resolution (pixel size ranging from 300 x 300 square micrometers to few square
millimeters), high spectral response and high detection efficiency. To reach
these goals, reliable, highly integrated, low noise and low power consumption
electronics is mandatory. Our group is currently developing a new ASIC detector
front-end named IDeF-X, for modular spectro-imaging system based on the use of
Cd(Zn)Te detectors. We present here the first version of IDeF-X which consists
in a set of ten low noise charge sensitive preamplifiers (CSA). It has been
processed with the standard AMS 0.35 micrometer CMOS technology. The CSA are
designed to be DC coupled to detectors having a low dark current at room
temperature. The various preamps implemented are optimized for detector
capacitances ranging from 0.5 up to 30 pF.
