  The magnetic order in antiferromagnetic (AF) materials is hard to control
with external magnetic fields. However, recent advances in detecting and
manipulating AF order electrically have opened up new prospects for these
materials in basic and applied spintronics research. Using x-ray magnetic
linear dichroism microscopy, we show here that staggered effective fields
generated by electrical current can induce reproducible and reversible
modification of the antiferromagnetic domain structure in microdevices
fabricated from a tetragonal CuMnAs thin film. The current-induced domain
switching is inhomogeneous at the submicron level. A clear correlation between
the average domain orientation and the anisotropy of the electrical resistance
is demonstrated.
