  As a crucial element for various applications, including optical
communications and analog photonic links, electro-optic modulators have a small
size, low voltage, and wide bandwidth.
  Electro-optic modulators based on the thin-film lithium niobate (TFLN) are
highly efficient and have a large modulation bandwidth. However, there is a
tradeoff between driving voltage and modulation bandwidth. In this study, we
present the electro-optical modulator based on the TFLN platform by using the
electro-optic equalizer. Using the electro-optic equalizer causes that the
proposed modulator has a broad bandwidth while the driving voltage is not
compromised. In this proposed modulator, to compensate for the velocity
mismatch and minimize interference of the electrode with the waveguide, a
two-layer metallization method is used. This proposed modulator results in
minimal optical and microwave losses and allows for a large electro-optic
bandwidth of up to 300GHz for a 5 mm-long device. Additionally, an efficiency
of 4.5 V.cm.
