  Semiconductor spin qubits combine excellent quantum performance with the
prospect of manufacturing quantum devices using industry-standard
metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted
donor spins, which further afford exceptional coherence times and large Hilbert
space dimension in their nuclear spin. Here we demonstrate and integrate
multiple strategies to manufacture scale-up donor-based quantum computers. We
use $^{31}$PF$_{2}$ molecule implants to triple the placement certainty
compared to $^{31}$P ions, while attaining 99.99$\,$% confidence in detecting
the implant. Similar confidence is retained by implanting heavier atoms such as
$^{123}$Sb and $^{209}$Bi, which represent high-dimensional qudits for quantum
information processing, while Sb$_2$ molecules enable deterministic formation
of closely-spaced qudits. We demonstrate the deterministic formation of regular
arrays of donor atoms with 300$\,$nm spacing, using step-and-repeat
implantation through a nano aperture. These methods cover the full gamut of
technological requirements for the construction of donor-based quantum
computers in silicon.
