  The low-field electron diffusion, noise, and the conduction in amorphous
chalcogenides are investigated by means of a Monte Carlo implementation of a
full three- dimensional variable-range hopping transport model between
localized states. Quantities like the carrier-velocity autocorrelation
function, the noise power spectrum, the diffusion coefficient and the ohmic
conductivity are obtained from numerical simulations at room temperatures and
lower. Some interesting features of the linear-response regime typical of
hopping transport are observed and discussed for the case of the amorphous
Ge2Sb2Te5.
