  We observe the noise spectrum of electron spins in bulk GaAs by Faraday
rotation noise spectroscopy. The experimental technique enables the undisturbed
measurement of the electron spin dynamics in semiconductors. We measure
exemplarily the electron spin relaxation time and the electron Lande g-factor
in n-doped GaAs at low temperatures and find good agreement of the measured
noise spectrum with an unpretentious theory based on Poisson distribution
probability.
