  Using optical pump-white light probe spectroscopy the gain dynamics is
investigated for a VECSEL chip which is based on a type-II heterostructure. The
active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs
multiple quantum well. For this structure, a fully microscopic theory predicts
a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by
experimental spectra. The results show a gain buildup on the type-II chip which
is delayed relative to that of a type-I chip. This slower gain dynamics is
attributed to a diminished cooling rate arising from reduced electron-hole
scattering.
