  This paper presents the effect of different cooling rate after annealing on
structural and electrical properties of TiO2 thin films. Titanium dioxide thin
film was deposited on a silicon substrate using DC magnetron technique. After
annealing TiO2 thin films at 600oC, to investigate the effect of different
cooling rates on TiO2 thin films, samples were cooled down from 600oC to the
room temperature under 3 different rates: 2oC/min, 6oC/min and 8oC/min. The
Surface morphology, crystal structure, and electrical property of samples were
characterized by atomic force measurement (AFM), X-ray diffraction (XRD) and
Four-point probe (FPP) technique. It is found that the rate of decreasing
temperature after annealing can affect the morphology structure and electrical
resistivity of titanium dioxide. Sample with 2oC/m has the biggest grain size,
and more electrical resistivity while the smallest grain size and lowest
electrical resistivity belong to sample with 8oC/m cooling rate.
