  We theoretically predict that vanadium-based Janus dichalcogenide monolayers
constitute an ideal platform for spin-orbit-torque memories. Using first
principles calculations, we demonstrate that magnetic exchange and magnetic
anisotropy energies are higher for heavier chalcogen atoms, while the broken
inversion symmetry in the Janus form leads to the emergence of Rashba-like
spin-orbit coupling. The spin-orbit torque efficiency is evaluated using
optimized quantum transport methodology and found to be comparable to heavy
nonmagnetic metals. The coexistence of magnetism and spin-orbit coupling in
such materials with tunable Fermi-level opens new possibilities for monitoring
magnetization dynamics in the perspective of non-volatile magnetic random
access memories.
