  SnTe is a topological crystalline insulator that possesses spin-polarized,
Dirac-dispersive surface states protected by crystal symmetry. Multiple surface
states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band
structure of surface states depending on the mirror symmetry of a particular
surface. Thus, to access surface states selectively, it is critical to control
the morphology of SnTe such that only desired crystallographic surfaces are
present. Here, we grow SnTe nanostructures using vapor-liquid-solid and
vapor-solid growth mechanisms. Previously, SnTe nanowires and nanocrystals have
been grown.1-4 In this report, we demonstrate synthesis of SnTe nanoplates with
lateral dimensions spanning tens of microns and thicknesses of a hundred
nanometers. The top and bottom surfaces are either (100) or (111), maximizing
topological surface states on these surfaces. Magnetotransport on these SnTe
nanoplates shows high bulk carrier density, consistent with bulk SnTe crystals
arising due to defects such as Sn vacancies. In addition, we observe a
structural phase transition in these nanoplates from the high temperature rock
salt to low temperature rhombohedral structure. For nanoplates with very high
carrier density, we observe a slight upturn in resistance at low temperatures,
indicating electron-electron interactions.
