  The fabrication of artificial materials by stacking of individual
two-dimensional (2D) materials is amongst one of the most promising research
avenues in the field of 2D materials. Moreover, this strategy to fabricate new
man-made materials can be further extended by fabricating hybrid stacks between
2D materials and other functional materials with different dimensionality
making the potential number of combinations almost infinite. Among all these
possible combinations, mixing 2D materials with transition metal oxides can
result especially useful because of the large amount of interesting physical
phenomena displayed separately by these two material families. We present a
hybrid device based on the stacking of a single layer MoS2 onto a lanthanum
strontium manganite (La0.7Sr0.3MnO3) thin film, creating an atomically thin
device. It shows a rectifying electrical transport with a ratio of 103, and a
photovoltaic effect with Voc up to 0.4 V. The photodiode behaviour arises as a
consequence of the different doping character of these two materials. This
result paves the way towards combining the efforts of these two large materials
science communities.
