  In this paper, we investigate the impact of gating potential and magnetic
field on phonon induced spin relaxation rate and the speed of the electrically
driven single-qubit operations inside the InSb nanowire spin qubit. We show
that a strong $g$ factor and high magnetic field strength lead to the
prevailing influence of electron-phonon scattering due to deformation
potential, considered irrelevant for materials with a weak $g$ factor, like
GaAs or Si/SiGe. In this regime, we find that spin relaxation between qubit
states is significantly suppressed due to the confinement perpendicular to the
nanowire axis. We also find that maximization of the number of single-qubit
operations that can be performed during the lifetime of the spin qubit requires
single quantum dot gating potential.
