  Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to
display exotic transport properties, such as large intrinsic anomalous (AHE)
due to uncompensated Berry curvature. The highly symmetric XPt3 compounds
display anti-crossing gapped nodal lines, which are a driving mechanism in the
intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two
sets of gapped nodal lines that harmoniously dominate the Berry curvature in
this complex multiband system. We calculate a maximum AHE of 1965 S/cm in the
CrPt3 by a state-of-the-art first principle electronic structure. We have grown
high-quality thin films by magnetron sputtering and measured a robust AHE of
1750 S/cm for different sputtering growth conditions. Additionally, the cubic
films display a hard magnetic axis along [111] direction. The facile and
scalable fabrication of these materials is prime candidates for integration
into topological devices.
