  Single-photon detection is an invaluable tool for many applications ranging
from basic research to consumer electronics. In this respect, the Single Photon
Avalanche Diode (SPAD) plays a key role in enabling a broad diffusion of these
techniques thanks to its remarkable performance, room-temperature operation,
and scalability. In this paper we present a silicon technology that allows the
fabrication of SPAD-arrays with an unprecedented combination of low timing
jitter (95 ps FWHM) and high detection efficiency at red and near infrared
wavelengths (peak of 70% at 650 nm, 45% at 800 nm). We discuss the device
structure, the fabrication process, and we present a thorough experimental
characterization of the fabricated detectors. We think that these long-awaited
results can pave the way to new exciting developments in many fields, ranging
from quantum optics to single molecule spectroscopy
