  Using an electrochemically gated transistor, we achieved controlled and
reversible doping of poly(p-phenylene vinylene) in a large concentration range.
Our data open a wide energy-window view on the density of states (DOS) and
show, for the first time, that the core of the DOS function is Gaussian, while
the low-energy tail has a more complex structure. The hole mobility increases
by more than four orders of magnitude when the electrochemical potential is
scanned through the DOS.
