  In bilayers of two-dimensional (2D) semiconductors with stacking arrangements
which lack inversion symmetry charge transfer between the layers due to
layer-asymmetric interband hybridisation can generate a potential difference
between the layers. We analyse bilayers of transition metal dichalcogenides
(TMDs) - in particular, WSe$_2$ - for which we find a substantial
stacking-dependent charge transfer, and InSe, for which the charge transfer is
found to be negligibly small. The information obtained about TMDs is then used
to map potentials generated by the interlayer charge transfer across the
moir\'e superlattice in twistronic bilayers.
