  A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs)
is proposed. The model is based on a number of fitting parameters depending on
bias conditions by third order polynomials. The model includes three thermal
parameters describing CNTFET behaviour in terms of saturation drain current,
threshold voltage and M exponent in the knee region versus the temperature. To
confirm the validity of the proposed thermal model, the simulations were
performed in very different thermal conditions, obtaining I-V characteristics
perfectly coincident with those of other models. The very low CPU calculation
time makes the proposed model particularly suitable to be implemented in CAD
applications.
