  Superconductor-to-Insulator transition (SIT) is a phenomenon occurring for
highly disordered superconductors and is suitable for a superconducting switch
development. SIT has been demonstrated to be induced by different external
parameters such as temperature, magnetic field, electric field, etc. However,
electric field induced SIT (ESIT), which has been experimentally demonstrated
for some specific materials, holds the promise of any practical device
development. Here, we demonstrate, from theoretical considerations, the
occurrence of ESIT. We also propose a general switching device architecture
using ESIT and study some of its universal behavior, such as the effect of
sample size, disorder strength and temperature on the switching action. This
work provides a general framework for development of such a device.
