  To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a
Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip
sensors with capacitive charge division. The sensors have a readout pitch of
120 micrometers, with five intermediate strips (20 micrometer strip pitch). The
designs of the silicon sensors and of the test structures used to verify the
technological parameters, are presented. Results on the electrical measurements
are discussed. A total of 1123 sensors with three different geometries have
been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor
neutrons and Co-60 photons have been performed for a small sample of sensors.
The results on neutron irradiation (with a fluence of 1 x 10^{13} 1 MeV
equivalent neutrons / cm^2) are well described by empirical formulae for bulk
damage. The Co-60 photons (with doses up to 2.9 kGy) show the presence of
generation currents in the SiO_2-Si interface, a large shift of the flatband
voltage and a decrease of the hole mobility.
