  Using empirical potential molecular dynamics we compute dynamical matrix
eigenvalues and eigenvectors for a 4096 atom model of amorphous silicon and a
set of models with voids of different size based on it. This information is
then employed to study the localization properties of the low-energy
vibrational states, calculate the specific heat C(T) and examine the
low-temperature properties of our models usually attributed to the presence of
tunneling states in amorphous silicon. The results of our calculations for C(T)
and "excess specific heat bulge" in the C(T)/T^3 vs. T graph for voidless a-Si
appear to be in good agreement with experiment; moreover our investigation
shows that the presence of localized low-energy excitations in the vibrational
spectrum of our models with voids strongly manifests itself as a sharp peak in
C(T)/T^3 dependence at T < 3K. To our knowledge this is the first numerical
simulation that provides adequate agreement with experiment for the very
low-temperature properties of specific heat in disordered systems within the
limits of harmonic approximation.
