  The resistive switching phenomena of HfO2 films grown by metalorganic
chemical vapor deposition was studied for the application of ReRAM devices. In
the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching
characteristics were observed, and the set and reset states were measured to be
as low as 7 uA and 4 uA, respectively, at VREAD = 1 V. Regarding the resistive
switching performance, the stable RS performance was observed under 40
repetitive dc cycling test with the small variations of set/reset voltages and
currents, and good retention characteristics over 105 s in both LRS and HRS.
These results show the possibility of MOCVD grown HfO2 films as a promising
resistive switching materials for ReRAM applications.
