  This work reports flexible fully transparent high-voltage diodes that feature
high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V)
simultaneously, combined with their applications as building blocks of energy
management systems in wearable electronics where triboelectric nanogenerators
(TENGs) are used as power source. Both experimental results and technology
computer aided design (TCAD) simulations suggest that Rr and Vb can be
modulated by the offset length in an opposite tendency. The low reverse leakage
current (fA/MICRON) guarantees an ultra-low power consumption in standby mode,
which is a core issue in wearable device applications. Besides the
unprecedented electrical performance, the diodes exhibit good mechanical
robustness with minimal degradation throughout the strain and fatigue tests. By
incorporating these high-voltage diodes into half-wave and full-wave rectifier
circuits, the high alternating current (AC) output voltage of TENGs is
successfully rectified into direct current (DC) voltage and charged into
supercapacitors (SCs), indicating their high integration and compatibility with
TENGs, and thus their promising applications in various wearable electronic
systems.
