  We report transport studies on the 5 nm thick Bi2Se3 topological insulator
films which are grown via molecular beam epitaxy technique. The angle-resolved
photoemission spectroscopy data show that the Fermi level of the system lies in
the bulk conduction band above the Dirac point, suggesting important
contribution of bulk states to the transport results. In particular, the
crossover from weak antilocalization to weak localization in the bulk states is
observed in the parallel magnetic field measurements up to 50 Tesla. The
measured magneto-resistance exhibits interesting anisotropy with respect to the
orientation of B// and I, signifying intrinsic spin-orbit coupling in the
Bi2Se3 films. Our work directly shows the crossover of quantum interference
effect in the bulk states from weak antilocalization to weak localization. It
presents an important step toward a better understanding of the existing
three-dimensional topological insulators and the potential applications of
nano-scale topological insulator devices.
