  Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering
method on MgO-buffered SiO2/Si(001) substrates. X-ray diffraction pattern and
Energy dispersive X-ray spectroscopy confirmed the high-quality growth and
stoichiometry. The temperature dependence of the resistivity shows a
semiconducting-type behavior down to low temperature. The Hall mobility was
determined to be 450 cm2/Vs at 300K, which is much higher than the bulk value
(300 cm2/Vs). In-plane magnetoresistance (MR) measurements with fields applied
along and perpendicular to the current direction show opposite MR signs, which
suggests the possible existence of the topological surface states.
