  The ground state energy of exciton bound by distant ionized donor impurity in
quasi-two-dimensional GaAs/AlGaAs semiconductor quantum well (QW) is studied
theoretically within the Hartree approach in the effective mass approximation.
The influence of the distance between QW plane and ionized donor, as well as of
the magnetic field aligned across the QW plane and varying dielectric constant
of the barrier material on the stability of exciton bound by ionized donor
impurity is analyzed and discussed.
