  In the present report, we have investigated the effect of the low-frequency
signal on nanoscale memristor device. The frequency is varied from 2 Hz to 10
Hz and the corresponding effect on the current-voltage characteristics, time
domain state variable, charge-magnetic flux relation, memristance-charge
relation, memristance-voltage characteristics and memristance-magnetic flux
relation are studied. The results clearly suggested that the frequency of the
input stimulus plays an important role in the device dynamics.
