  Janus transition metal dichalcogenides (JTMDs) have attracted much attention
because of their outstanding electronic and optical properties. The additional
out-of-plane dipole in JTMDs can form n- and p-like Ohmic contacts, and this
may be used in device applications such as pin diodes and photovoltaic cells.
In this study, we exploit this property to design n- and p-type
metal-oxide-semiconductor field effect transistors (MOSFETs). First, we use
density-functional theory calculations to study the inherent dipole field
strength in the trilayer JTMD MoSSe. The intrinsic dipole of MoSSe causes band
bending at both the metal/MoSSe and MoSSe/metal interfaces, resulting in
electron and hole accumulation to form n- and p-type Ohmic contact regions. We
incorporate this property into a 2D finite-element-based
Poisson-drift-diffusion solver to perform simulations, on the basis of which we
design complementary MOSFETs. Our results demonstrate that JTMDs can be used to
make n- and p-MOSFETs in the same layer without the need for any extra doping.
