  State of the art quantum transport models for semiconductor nanodevices
attribute negative (positive) unit charges to states of the conduction
(valence) band. Hybrid states that enable band-to-band tunneling are subject to
interpolation that yield model dependent charge contributions. In any
nanodevice structure, these models rely on device and physics specific input
for the dielectric constants. This paper exemplifies the large variability of
different charge interpretation models when applied to ultrathin body
transistor performance predictions. To solve this modeling challenge, an
electron-only band structure model is extended to atomistic quantum transport.
Performance predictions of MOSFETs and tunneling FETs confirm the generality of
the new model and its independence of additional screening models.
