  There is an increasing interest in the electronic properties of few layer
graphene as it offers a platform to study electronic interactions because the
dispersion of bands can be tuned with number and stacking of layers in
combination with electric field. However, electronic interaction becomes
important only in very clean devices and so far the trilayer graphene
experiments are understood within non-interacting electron picture. Here, we
report evidence of strong electronic interactions and quantum Hall
ferromagnetism (QHF) seen in ABA trilayer graphene (ABA-TLG). Due to high
mobility $\sim$500,000 cm$^2$V$^{-1}$s$^{-1}$ in our device compared to
previous studies, we find all symmetry broken states and that Landau Level (LL)
gaps are enhanced by interactions; an aspect explained by our self-consistent
Hartree-Fock (H-F) calculations. Moreover, we observe hysteresis as a function
of filling factor ($\nu$) and spikes in the longitudinal resistance which,
together, signal the formation of QHF states at low magnetic field.
