  Nanolaminated Al2O3/HfO2 thin films as well as single Al2O3 and HfO2 layers
have been grown as gate dielectrics by Plasma Enhanced Atomic Layer Deposition
(PEALD) technique on silicon carbide (4H-SiC) substrates. All the three
dielectric films have been deposited at temperature as low as 250{\deg}C, with
a total thickness of about 30 nm and in particular, the nanolaminated
Al2O3/HfO2 films have been fabricated by alternating nanometric Al2O3 and HfO2
layers. The structural characteristics and dielectrical properties of the
nanolaminated Al2O3/HfO2 films have been evaluated and compared to those of the
parent Al2O3 and HfO2 single layers. Moreover, the structural properties and
their evolution upon annealing treatment at 800{\deg}C have been investigated
as preliminar test for their possible implementation in the device fabrication
flow-chart. On the basis of the collected data, the nanolaminated films
demonstrated to possess promising dielectric behavior with respect to the
simple oxide layers.
