  The Hall effect, and the diagonal resistance, which indicates a residual
resistivity $\rho_{xx} \approx h/4e^{2}$, are experimentally examined over the
p$\leftrightarrow$n transition about the nominal neutrality point in chemical
vapor deposition (CVD) grown graphene. A distribution of neutrality potentials
is invoked in conjunction with multi-carrier conduction to model the
experimental observations. From the modeling, we extract the effective residual
electron- and hole- densities around the nominal neutrality point. The results
indicate mixed transport due to co-existing electrons and holes in large area
zero-band gap CVD graphene devices, which indicates domain confined ambipolar
currents broadly over the gate-induced n $\leftrightarrow$ p transition.
