  This brief proposes an analytical approach to model the dc electrical
behavior of extremely narrow cylindrical junctionless nanowire field-effect
transistor (JLNW-FET). The model includes explicit expressions, taking into
account the first-order perturbation theory for calculating eigenstates and
corresponding wave functions obtained by the Schrodinger equation in the
cylindrical coordinate. Assessment of the proposed model with technology
computer-aided design (TCAD) simulations and measurement results confirms its
validity for all regions of operation. This represents an essential step toward
the analysis of circuits mainly biosensors based on junctionless nanowire
transistors.
