  We analyze the complex impact of the local magnetic spin texture on the
transverse Hall-type voltage in device structures utilized to measure
magnetoresistance effects. We find a highly localized and asymmetric magnetic
sensitivity in the eight-terminal geometries that are frequently used in
current-induced switching experiments, for instance to probe antiferromagnetic
materials. Using current-induced switching of antiferromagnetic NiO/Pt as an
example, we estimate the change in the spin Hall magnetoresistance signal
associated with switching events based on the domain switching patterns
observed via direct imaging. This estimate correlates with the actual
electrical data after subtraction of a non-magnetic contribution. Here, the
consistency of the correlation across three measurement geometries with
fundamentally different switching patterns strongly indicates a magnetic origin
of the measured and analyzed electrical signals.
