  True random number generator (TRNG) plays a vital role in a variety of
security applications and protocols. The security and privacy of an asset rely
on the encryption, which solely depends on the quality of random numbers.
Memory chips are widely used for generating random numbers because of their
prevalence in modern electronic systems. Unfortunately, existing Dynamic
Random-access Memory (DRAM)-based TRNGs produce random numbers with either
limited entropy or poor throughput. In this paper, we propose a DRAM-latency
based TRNG that generates high-quality random numbers. The silicon results from
Samsung and Micron DDR3 DRAM modules show that our proposed DRAM-latency based
TRNG is robust (against different operating conditions and environmental
variations) and acceptably fast.
