  Enhancing the switching speed of oxide-based memristive devices at a low
voltage level is crucial for their use as non-volatile memory and their
integration into emerging computing paradigms such as neuromorphic computing.
Efforts to accelerate the switching speed often result in an energy tradeoff,
leading to an increase of the minimum working voltage. In our study, we present
an innovative solution: the introduction of a low thermal conductivity layer
placed within the active electrode, which impedes the dissipation of heat
generated during the switching process. The result is a notable acceleration in
the switching speed of the memristive model system SrTiO$_{3}$ by a remarkable
factor of 10$^{3}$, while preserving the integrity of the switching layer and
the interfaces with the electrodes, rendering it adaptable to various
filamentary memristive systems. The incorporation of HfO$_{2}$ or TaO$_{x}$ as
heat-blocking layers not only streamlines the fabrication process, but also
ensures compatibility with complementary metal-oxide-semiconductor technology.
