  In the present work, we have investigated the quantum transport in n Si
junction less nanowire field effect transistors using 3 D, full band atomistic
sp3d5s spin orbital coupled tight binding method. We have investigated the IDS
VGS transfer characteristics, IDS VDS output characteristics, ON current, OFF
current leakage, subthreshold swing and energy position resolved electron
density spectrum Gn x, E in n Si junction less nanowire field effect
transistors. We also study IDS VGS transfer characteristics with variation of
High K gate materials. Quantum mechanical simulation is performed on the basis
of Non Equilibrium Green Function formalism to solve coupled Poisson Schr
"odinger equation self consistently for potentials and local density of state
in n Si junction less nanowire field effect transistors.
