  Flux growth of single crystals is normally performed in a vertical
configuration with an upright refractory container holding the flux melt. At
high temperatures, flux dissolves the charge forming a homogeneous solution
before nucleation and growth of crystals take place under proper
supersaturation generated by cooling or evaporating the flux. In this work, we
report flux growth in a horizontal configuration with a temperature gradient
along the horizontal axis: a liquid transport growth analogous to the vapor
transport technique. In a typical liquid transport growth, the charge is kept
at the hot end of the refractory container and the flux melt dissolves the
charge and transfers it to the cold end. Once the concentration of charge is
above the solubility limit at the cold end, the thermodynamically stable phase
nucleates and grows. Compared to the vertical flux growth, the liquid transport
growth can provide a large quantity of crystals in a single growth since the
charge/flux ratio is not limited by the solubility limit at the growth
temperature. This technique is complementary to the vertical flux growth and
can be considered when a large amount of crystals are needed but the yield from
the conventional vertical flux growth is limited. We applied this technique to
the growth of IrSb$_3$, Mo$_3$Sb$_7$, MnBi from self flux, and the growth of
FeSe, CrTe$_3$, NiPSe$_3$, FePSe$_3$, and InCuP$_2$S$_6$ from a halide flux.
