  A broad TCAD simulation analysis of a monolithic common drain bidirectional
GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6
microns for the devices optimized with two field plates. The breakdown voltages
were 675V and 915V respectively. Inclusion of field plates near both the gates
produced electric field peaks at the opposite ends of the transistor
simultaneously. This resulted in better electric field management or higher
blocking voltage per unit length. Consequently, the 675V monolithic
bidirectional HEMT had an impressive 40% improvement in on-resistance than its
650V typical series/parallel counterpart.
