  By using the pulsed-laser-ablation technique, we have successfully grown the
La$_{3}$Ni$_{2}$O$_{7-\delta}$ thin films with $c$-axis orientation
perpendicular to the film surface. X-ray diffraction shows that the (00l) peaks
can be well indexed to the La$_{3}$Ni$_{2}$O$_{7-\delta}$ phase. Resistive
measurements show that the samples can be tuned from weak insulating to
metallic behavior through adjusting the growth conditions. Surprisingly, all
curves of $\rho-T$ in the temperature region of 2$\sim$300~K do not show the
anomalies corresponding to either the spin density wave or the charge density
wave orders as seen in bulk samples. Hall effect measurements show a linear
field dependence with the dominant hole charge carriers, but the Hall
coefficient $R_{H}=\rho_{xy}/H$ exhibits strong temperature dependence. The
magnetoresistance above about 50~K is positive but very weak, indicating the
absence of multiband effect. However, a negative magnetoresistance is observed
at low temperatures, which shows the delocalization effect. Detailed analysis
on the magnetoresistance suggests that the delocalization effect at low
temperatures is due to the Kondo-like effect, rather than the Anderson weak
localization. Our transport results suggest that, the electronic conduction is
fulfilled by the $d_{x^{2}-y^{2}}$ orbital with holes as the dominant charge
carriers, while the interaction through Hund's coupling with the localized
$d_{z^{2}}$ orbital plays an important role in the charge dynamics.
