  We report parametric gain by utilizing $ \chi^{(2)} $ non-linearities in a
semiconductor Bragg Reflection Waveguide (BRW) waveguide chip. Under the
two-mode degenerate type II phase matching, it can be shown that more than 18
dBs of parametric gain for both TE and TM modes is tenable in 100s of
micrometers of device length. Polarization insensitive parametric gain can be
attained within the 1550 nm region of the spectrum. These AlGaAs BRW waveguides
exhibit sub-photon per pulse sensitivity. This is in sharp contrast to other
types of parametric gain devices which utilize $ \chi^{(3)} $, where the pump
wavelength is in the vicinity of the signal wavelength. This sensitivity, which
reached 0.1~photon/pulse, can usher a new era for on-chip quantum information
processing using compact, micrometer-scale devices.
