  Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition
(ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic
polycrystalline films on both substrates. However, the films show a
preferential orientation along <200> crystallographic direction for CeO2/Si or
<111> for CeO2/TiN. In correspondence, we measure a relative concentration of
Ce3+ equals to 22.0% in CeO2/Si and around 18% in CeO2/TiN, by X-ray
photoelectron spectroscopy. Such values indicate the presence of oxygen
vacancies in the films. Our results extend the knowledge on the structural and
chemical properties of ALD-deposited CeO2 either on Si or TiN substrates,
underlying films differences and similarities, thus contributing to boost the
use of CeO2 through ALD deposition as foreseen in a wide number of
applications.
