  A highly promising route to scale millions of qubits is to use quantum
photonic integrated circuits (PICs), where deterministic photon sources,
reconfigurable optical elements, and single-photon detectors are monolithically
integrated on the same silicon chip. The isolation of single-photon emitters,
such as the G centers and W centers, in the optical telecommunication O-band,
has recently been realized in silicon. In all previous cases, however,
single-photon emitters were created uncontrollably in random locations,
preventing their scalability. Here, we report the controllable fabrication of
single G and W centers in silicon wafers using focused ion beams (FIB) with a
probability exceeding 50%. We also implement a scalable, broad-beam
implantation protocol compatible with the
complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single
telecom emitters at desired positions on the nanoscale. Our findings unlock a
clear and easily exploitable pathway for industrial-scale photonic quantum
processors with technology nodes below 100 nm.
