  In semiconductor nanostructures nonradiative Auger recombination is enhanced
by the presence of boundaries which relax the momentum conservation and thereby
removes the threshold reduction for these processes. We propose a method to
strongly reduce the Auger recombination rate by injecting spin-polarized
carriers. Our method is illustrated on the example of a quantum well in which
the spin-orbit coupling of conduction band is negligible as compared to valence
band and thus holes can be considered as spin-unpolarized. The suppression
factor of the Auger recombination is determined by the two-dimensional
character of the system, given by the ratio of the Fermi energy of electrons
and the separation of the electron levels quantized in the growth direction.
Our predictions can be tested experimentally and we discuss their implications
for semiconductor lasers relying on injection of spin-polarized electrons.
