  The chiral Luttinger liquid theory for fractional quantum Hall edge transport
predicts universal power-law behavior in the current-voltage ($I$-$V$)
characteristics for electrons tunneling into the edge. However, it has not been
unambiguously observed in experiments in two-dimensional electron gases based
on GaAs/GaAlAs heterostructures or quantum wells. One plausible cause is the
fractional quantum Hall edge reconstruction, which introduces non-chiral edge
modes. The coupling between counterpropagating edge modes can modify the
exponent of the $I$-$V$ characteristics. By comparing the $\nu=1/3$ fractional
quantum Hall states in modulation-doped semiconductor devices and in graphene
devices, we show that the graphene-based systems have an experimental
accessible parameter region to avoid the edge reconstruction, which is suitable
for the exploration of the universal edge tunneling exponent predicted by the
chiral Luttinger liquid theory.
