  Magnetoresistance and Hall coefficient of a graphene layer are investigated
in the presence of a tilted magnetic field. We consider the graphene layer is
assembled by either another graphene layer or a two-dimensional electron gas
(2DEG) and an interlayer electron-electron interaction is modeled within Random
Phase Approximation. Our calculated magnetoresistances show different
interlayer screening effects between decoupled graphene-graphene and
graphene-2DEG systems. We also analyze the dependence of dielectric materials
as well as the distance between layers on magnetoresistances. The angle
dependence of the Hall coefficient is studied and we show that a quite large
Hall resistivity occurs in the graphene layer.
