  Magnetic trapping potentials for atoms on atom chips are determined by the
current flow in the chip wires. By modifying the shape of the conductor we can
realize specialized current flow patterns and therefore micro-design the
trapping potentials. We have demonstrated this by nano-machining an atom chip
using the focused ion beam technique. We built a trap, a barrier and using a
BEC as a probe we showed that by polishing the conductor edge the potential
roughness on the selected wire can be reduced. Furthermore we give different
other designs and discuss the creation of a 1D magnetic lattice on an atom
chip.
