  Emerging memristor-based array architectures have been effectively employed
in non-volatile memories and neuromorphic computing systems due to their
density, scalability and capability of storing information. Nonetheless, to
demonstrate a practical on-chip memristor-based system, it is essential to have
the ability to apply large programming voltage ranges during the
characterisation procedures for various memristor technologies. This work
presents a 16x16 high voltage memristor characterisation array employing high
voltage CMOS circuitry. The proposed system has a maximum programming range of
$\pm22V$ to allow on-chip electroforming and I-V sweep. In addition, a Kelvin
voltage sensing system is implemented to improve the readout accuracy for low
memristance measurements. This work addresses the limitation of conventional
CMOS-memristor platforms which can only operate at low voltages, thus limiting
the characterisation range and integration options of memristor technologies.
