  Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet
multilayers, which are exploited in state-of-the-art magnetic field sensing and
data storage technologies. In this work we report a novel
current-perpendicular-to-plane magnetoresistance effect in multilayer graphene
as grown on a catalytic nickel surface by chemical vapor deposition. A negative
magnetoresistance effect of 10^4% has been observed, which persists even at
room temperature. This effect is correlated with the shape of the 2D peak as
well as with the occurrence of D peak in the Raman spectrum of the as-grown
multilayer graphene. The observed magnetoresistance is extremely high as
compared to other known materials systems for similar temperature and field
range and can be qualitatively explained within the framework of "interlayer
magnetoresistance" (ILMR).
