  Quantum photonic integrated circuit (QPIC) is a promising tool for
constructing integrated devices for quantum technology applications. In the
optical regime, silicon photonics empowered by
complementary-metal-oxide-semiconductor (CMOS) technology provides optical
components useful for realizing large-scale QPICs. Optical nonlinearity at the
single-photon level is required for QPIC to facilitate photon-photon
interaction. However, to date, realization of optical elements with
deterministic( i.e., not probabilistic) single-photon nonlinearity by using
silicon-based components is challenging, despite the enhancement of the
functionality of QPICs based on silicon photonics. In this study, we realize
for the first time a strongly coupled InAs/GaAs quantum dot-cavity quantum
electrodynamics (QED) system on a CMOS-processed silicon photonic chip. The
heterogeneous integration of the GaAs cavity on the silicon chip is performed
by transfer printing. The cavity QED system on the CMOS photonic chip realized
in this work is a promising candidate for on-chip single-photon nonlinear
element, which constitutes the fundamental component for future applications
based on QPIC, such as, coherent manipulation and nondestructive measurement of
qubit states via a cavity, and efficient single-photon filter and router.
