  Spin-valley transport and magnetoresistance are investigated in
silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and
topological barriers. The topological phase transitions in TB's are controlled
by electric, exchange fields and circularly polarized light. As a result, we
find that by applying electric and exchange fields, four groups of spin-valley
currents are perfectly filtered, directly induced by topological phase
transitions. Control of currents, carried by single, double and triple channels
of spin-valley electrons in silicene junction, may be achievable by adjusting
magnitudes of electric, exchange fields and circularly polarized light. We may
identify that the key factor behind the spin-valley current filtered at the
transition points may be due to zero and non-zero Chern numbers. Electrons that
are allowed to transport at the transition points must obey zero-Chern number
which is equivalent to zero mass and zero-Berry's curvature, while electrons
with non-zero Chern number are perfectly suppressed. Very large
magnetoresistance dips are found directly induced by topological phase
transition points. Our study also discusses the effect of spin-valley dependent
Hall conductivity at the transition points on ballistic transport and reveals
the potential of silicene as a topological material for spin-valleytronics.
