  An analytical solution to the problem of decreasing the energy losses
$\Omega$ in diode current interrupters during recovery of the blocking ability
by optimizing dopant distribution $N(x)$ over structure thickness has been
obtained. It was found the distribution $N(x)$ close to optimal one that
decreases $\Omega$ by 30-55% compared with standard interrupters with uniformly
doped high-resistivity layers.
