  Here, we propose a Charge Plasma (CP)-based Germanium Double Gate Tunnel
Field-Effect Transistor (Ge-DGTFET) device structure, where a CP is induced in
the heavily doped source region using the work function engineering of source
electrode. The CP enables creation of electrical metallurgical junction and
converts n-p-n to p-n-p-n structure of TFET and enhances the drain current,
reliability, eliminate additional pocket ion-implantation. The proposed
CP-Ge-DGTFET device structure revealed excellent electrical DC performance as
compared to the conventional Ge-DGTFET device structure such as high ON current
(ION), excellent ION/IOFF ratio, and low sub-threshold swing of ~4.7E-4 A/um,
~1.8E9, and ~5.23 mV/dec, respectively. Furthermore, analog/RF analyses
revealed high transconductance, upright cut-off frequency, low overall
capacitance, transit time, and power delay product. Therefore, the proposed
CP-Ge-DGTFET device structure with alternate channel material Ge, High-\k{appa}
Al2O3, and work function engineered CP in source region furnishes high
performance and cost-effective solution for next-generation energy-efficient
switching applications.
