  We discuss the effects of gigahertz photon irradiation on a degenerately
phosphorous-doped silicon quantum dot, in particular, the creation of voltage
offsets on gate leads and the tunneling of one or two electrons via Coulomb
blockade lifting at 4.2K. A semi-analytical model is derived that explains the
main features observed experimentally. Ultimately both effects may provide an
efficient way to optically control and operate electrically isolated structures
by microwave pulses. In quantum computing architectures, these results may lead
to the use of microwave multiplexing to manipulate quantum states in a
multi-qubit configuration.
