  Multilayer graphene (MLG) films were grown by chemical vapour deposition
(CVD) on molybdenum carbide ($MoC_{x}$) substrates. We fabricated the catalytic
$MoC_{x}$ films by plasma enhanced atomic layer deposition (PEALD). The
mechanism of graphene growth is studied and analysed for amorphous and
crystalline $MoC_{x}$ films. In addition, the unique advantages of catalytic
substrate PEALD are demonstrated in two approaches to graphene device
fabrication. First, we present a complete bottom up, resist-free patterned
graphene growth (GG) on pre-patterned $MoC_{x}$ PEALD performed at
50$^{\circ}C$. Selective CVD GG eliminates the need to pattern or transfer the
graphene film to retain its pristine, as grown, qualities. Furthermore, we
fabricated MLG directly on PEALD $MoC_{x}$ on 100 nm suspended SiN membrane. We
characterise the MLG qualities using Raman spectroscopy, and analyse the
samples by optical microscopy, scanning electron microscopy and X-ray
diffraction measurements. The techniques of graphene device manufacturing
demonstrated here pave the path for large scale production of graphene
applications.
