  New pixel geometries are on the rise to achieve high sensitivity in
near-infrared wavelengths with silicon photomultipliers (SiPMs). We test
prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical
p-n junction and a high photodetection efficiency over a wide spectral range,
and analyze the performance after neutron irradiation. The observed increase in
dark count rate is significantly smaller than for a SiPM with a conventional
design, indicating a good radiation hardness of the pixel geometry.
