  Bottom-up assembled nanomaterials and nanostructures allow for the studies of
rich and unprecedented quantum-related and mesoscopic transport phenomena.
However, it can be difficult to quantify the correlations between the
geometrical or structural parameters obtained from advanced microscopy and
measured electrical characteristics when they are made into macroscopic
devices. Here, we propose a strategy to connect the nanomaterial morphologies
and the device performance through a Monte Carlo device model and apply it to
understand the scaling trends of bottom-up synthesized armchair graphene
nanoribbon (GNR) transistors. A new nanofabrication process is developed for
GNR transistors with channel length down to 7 nm. The impacts of the GNR
spatial distributions and the device geometries on the device performance are
investigated systematically through comparison of experimental data with the
model. Through this study, challenges and opportunities of transistor
technologies based on bottom-up synthesized GNRs are pinpointed, paving the way
to the further improvement of the GNR device performance for future transistor
technology nodes.
