  We study static and dynamic magnetic properties of Co2MnGe (13 nm)/Al2O3 (3
nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single
crystalline substrates (a-plane sapphire, MgO(100), Si(111)). The results are
compared to the magnetic properties of Co and of Co$_{2}$MnGe single films
lying on sapphire substrates. X-rays diffraction always shows a (110)
orientation of the Co$_{2}$MnGe films. Structural observations obtained by high
resolution transmission electron microscopy confirmed the high quality of the
TMJ grown on sapphire. Our vibrating sample magnetometry measurements reveal
in-plane anisotropy only in samples grown on a sapphire substrate. Depending on
the substrate, the ferromagnetic resonance spectra of the TMJs, studied by the
microstrip technique, show one or two pseudo-uniform modes. In the case of MgO
and of Si substrates only one mode is observed: it is described by magnetic
parameters (g-factor, effective magnetization, in-plane magnetic anisotropy)
derived in the frame of a simple expression of the magnetic energy density;
these parameters are practically identical to those obtained for the Co single
film. With a sapphire substrate two modes are present: one of them does not
appreciably differ from the observed mode in the Co single film while the other
one is similar to the mode appearing in the Co$_{2}$MnGe single film: their
magnetic parameters can thus be determined independently, using a classical
model for the energy density in the absence of interlayer exchange coupling.
