  The main target of this article is to propose for the first time a
physics-based continuous and symmetric compact model that accurately captures
IV experimental dependencies induced by geometrical scaling effects for
graphene transistor (GFET) technologies. Such a scalable model is an
indispensable ingredient for the boost of large-scale GFET applications, as it
has been already proved in solid industry-based CMOS technologies. Dependencies
of the physical model parameters on channel dimensions, are thoroughly
investigated, and semi?empirical expressions are derived, which precisely
characterize such behaviors for an industry-based GFET technology, as well as
for others developed in research labs. This work aims at the establishment of
the first industry standard GFET compact model that can be integrated in
circuit simulation tools and hence, can contribute to the update of GFET
technology from the research level to massive industry production.
