  We propose several planar layouts of ultra-compact plasmonic waveguide
modulators that utilize alternative CMOS-compatible materials. The modulation
is efficiently achieved by tuning the carrier concentration in a transparent
conducting oxide layer, thereby tuning the waveguide either in plasmonic
resonance or off-resonance. Resonance significantly increases the absorption
coefficient of the plasmonic waveguide, which enables larger modulation depth.
We show that an extinction ratio of 86 dB/um can be achieved, allowing for a
3-dB modulation depth in less than one micron at the telecommunication
wavelength. Our multilayer structures can potentially be integrated with
existing plasmonic and photonic waveguides as well as novel semiconductor-based
hybrid photonic/electronic circuits.
