  There are many researches reported in using Germanium in Silicon based lasers
but acquiring this potential for a nanolaser may also be important for
development of a CMOS compatible plasmon source. In this paper, a Ge/SiGe
multiple quantum well waveguide integrated nanolaser is introduced and
theoretically investigated. This structure is simulated and by means of a
semi-classical rate equation model, its performance is studied. The proposed
nano laser has a tiny footprint of 0.07um^2, room temperature performance and
CMOS compatible fabrication process. The output performance of the proposed
structure as estimated, is noticeable. These simulated results, compared with
some experiments and redundant software double checking, show acceptable
compatibility. In 1550nm output wavelength, it provides 3.83uW output power
with 1uA injection current while maintaining its performance in a wide
modulation bandwidth of 24.5GHz. This remarkable performance is achieved
thanked to a Purcell factor equal to 2208.
