  We propose a steep-slope MoS2-nanoribbon field-effect transistor that
exploits a narrow-energy conduction band to intrinsically filter out the
thermionic tail of the electron energy distribution. We study the device
operation principle and the performance dependence on the design parameters
through atomistic self-consistent quantum simulations. Our results indicate
that the device can provide high ION/IOFF ratios, compatible with electronic
applications, albeit biased at ultralow voltages of around 0.1 V.
