  An experiment to probe spin-polarized currents in the quantum Hall regime is
suggested that takes advantage of the large Zeeman-splitting in the
paramagnetic diluted magnetic semiconductor zinc manganese selenide
(Zn$_{1-x}$Mn$_x$Se). In the proposed experiment spin-polarized electrons are
injected by ZnMnSe-contacts into a gallium arsenide (GaAs) two-dimensional
electron gas (2DEG) arranged in a Hall bar geometry. We calculated the
resulting Hall resistance for this experimental setup within the framework of
the Landauer-B\"uttiker formalism. These calculations predict for 100%
spininjection through the ZnMnSe-contacts a Hall resistance twice as high as in
the case of no spin-polarized injection of charge carriers into a 2DEG for
filling factor $\nu=2$. We also investigated the influence of the equilibration
of the spin-polarized electrons within the 2DEG on the Hall resistance. In
addition, in our model we expect no coupling between the contact and the 2DEG
for odd filling factors of the 2DEG for 100% spininjection, because of the
opposite sign of the g-factors of ZnMnSe and GaAs.
