  The morphological evolution of the conducting filament (CF) predominantly
controls the electric response of the resistive random access memory (ReRAM)
devices. However, the parameters -- in terms of the material and the processing
-- which control the growth of such CF are plenty. Extending the phase field
technique for ReRAM systems presented by Roy and Cha [J. Appl. Phys. 128,
205102 (2020)], we could successfully model the complete SET (low resistance
state) and RESET (high resistance state) sates due to the application of
sweeping voltage. The key parameters that influence the stability of the
multi-cycle \emph{I-V} response or the endurance behavior are identified. The
computational findings of the presented model ReRAM system are practical in
correlating the multi-parametric influence with the stability, variability, and
reliability of the endurance cycle that affect the device performance and also
lead to the device failure. We believe that our computational approach of
connecting the morphological changes of the CF with the electrical response,
has the potential to further understand and optimize the performance of the
ReRAM devices.
