  Biaxially strained Si channel p-MOSFETs on virtual SiGe substrates suffer
from a parasitic parallel channel in virtual substrate. This channel
participates in current passing through the devices and increases parasitic
capacitors which degrades the high frequency response. In this paper a new
approach has been introduced to eliminate the channel which in turn reduces
parasitic capacitors of the MOSFET. It is illustrated that, increasing virtual
substrate doping, can reduce and finally eliminate this unintentional channel.
In this work 2D simulation has been used to investigate the impact of the
proposed method.
