  Employing first principles total energy calculations we have studied the
behavior of Ga and Al adatoms on the GaAs(001)-beta2 surface. The adsorption
site and two relevant diffusion channels are identified. The channels are
characterized by different adatom-surface dimer interaction. Both affect in a
novel way the adatom migration: in one channel the diffusing adatom jumps
across the surface dimers and leaves the dimer bonds intact, in the other one
the surface dimer bonds are broken. The two channels are taken into account to
derive effective adatom diffusion barriers. From the diffusion barriers we
conclude a strong diffusion anisotropy for both Al and Ga adatoms with the
direction of fastest diffusion parallel to the surface dimers. In agreement
with experimental observations we find higher diffusion barriers for Al than
for Ga.
