  We consider the influence of realistic island diffusion rates to
homoepitaxial growth on metallic surfaces using a recently developed rate
equation model which describes growth in the submonolayer regime with
hyperthermal deposition. To this end, we incorporate realistic size and
temperature-dependent island diffusion coefficients for the case of
homoepitaxial growth on Cu(100) and Cu(111) surfaces. We demonstrate that the
generic features of growth remain unaffected by the details of island
diffusion, thus validating the generic scenario of high density of small
islands found experimentally and theoretically for large detachment rates.
However, the details of the morphological transition and scaling of the mean
island size are strongly influenced by the size dependence of island diffusion.
This is reflected in the scaling exponent of the mean island size, which
depends on both temperature and the surface geometry.
