  The generation mechanisms of electron spin polarization (ESP) of charge
carriers (electrons and holes, called "doublets") in doublet-doublet
recombination and triplet-doublet quenching in disordered organic
semiconductors are analyzed in detail. The ESP is assumed to result from
quantum transitions between the states of the spin Hamiltonian of the pair of
interacting particles. The value of the ESP is essentially determined by the
mechanism of relative motion of particles. In our work we have considered the
cage and free diffusion models. The effect of possible attractive
spin-independent interactions between particles is also analyzed. Estimation
with obtained formulas shows that the proposed mechanisms can lead to a fairly
strong ESP much larger than the thermal one (at room temperatures)
