  Based on the micromagnetic simulations the magnetization switching in a
triangle magnetic element by voltage-control of magnetic anisotropy and
Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed.
The proposed switching scheme is not the toggle switching but the deterministic
switching where the magnetic state is determined by the polarity of the applied
voltage pulse. The mechanism and conditions for the switching are clarified.
The results provide a fast and low-power writing method for magnetoresistive
random access memories.
