  The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by
radio-frequency magnetron co-sputtering and were grown on GaSb and Si
substrates at different temperatures. We present results on the 10K excitonic
photoluminescence (PL) properties of nanocrystalline GaSb and Ga0.62In0.38Sb as
a function of their size. The measurements show that the PL of the GaSb and
Ga0.62In0.38Sb nanocrystallites follows the quantum confinement model very
closely. By using deconvolution of PL spectra, origins of structures in
photoluminescence were identified.
