  Most popular atomically thin carbon material, called graphene, has got no
band gap and this particular property of graphene makes it less useful from the
aspect of nanoscale transistor devices. The band gap can be introduced in the
graphene if it is synthesized through chemical route. First, Graphene Oxide
(GO) is made which further go under reduction and turns into Reduced Graphene
Oxide (RGO). Band structure investigation of monolayer sheets of reduced
graphene oxide (RGO) by Scanning Tunneling Spectroscopy (STS) has been
investigated here. The GO sheets are 1-1.2 nm thick and become more thinner
after reduction. The band gap of GO was found in the range of 0.8 eV. The RGO
showed up a variety of band structure. RGO opens a new field of study of
atomically thin layers of carbon because it has got non zero band gap which is
not the case for graphene.
