  The article presents the results of measurement and analysis of the field
dependences of the static magnetic susceptibility of thin epitaxial silicon
carbide films grown on the (110) surface of single-crystal silicon by the
method of the coordinated substitution of atoms. In weak magnetic fields, the
occurrence of two quantum effects at room temperature was experimentally found:
the hysteresis of the static magnetic susceptibility and, in the field
dependences, quantum Aharonov-Bohm oscillations of the static magnetic
susceptibility. The simultaneous occurrence of these effects is a consequence
of two- and one-particle interference of charge carriers (two-dimensional
holes) on microdefects consisting of dipole centers with negative correlation
energy (negative-U dipole centers).
