  Auger analysis of high-aspect ratio contact holes of integrated
microelectronic devices is a challenging analytical task. Due to geometrical
shadowing the primary electron beam and the energy analyser have not the
required direct line of sight to the analysis area simultaneously. To solve
this problem sample preparation is needed to flatten the 3-dimensional
geometry. Here the new approach of in-situ low-angle cross sectioning is
applied. By this method material gets removed inside the Auger instrument while
the sample is sputtered by Ar+ ions at nearly grazing incidence utilizing the
edge of a mask, which partly covers the sample. A very shallow bevel with
respect to the sample surface is produced. Thus along the bevel contact holes
with suitable aspect ratios are available for the Auger analysis.
