  This article presents a design for the two-dimensional heterostructure (2DH)
systems of graphane quantum dot array in graphane (GQD/Graphane), and silicene
quantum dot array in silicane (SiQD/Silicane). A first-principles method was
used to evaluate the deformation effect for magnetism as well as the electronic
properties for the 2DH systems. The energy levels of quantum dot (QD) array and
the band structure of its hydrogenated counterpart are coupling for both 2DH
systems of C and Si. The hydrogenated part shares part of strain on QD array,
however, the strain sharing effect is stronger in SiQD/silicane than in
GQD/graphane. The strain sharing enhances the band coupling of the QD and its
hydrogen counterpart in the low energy region. The band coupling alters the
electronic properties of the 2DH systems and change the magnetic properties of
triangular and parallelogram of SiQD/Silicane array under compressive strain
larger than 5%. Strain modulates the band gap of the 2DH system. For
SiQD/Silicane systems, the homogeneous strain not only induces the phase
transition of from semiconductor to metal, but also remove the magnetism of
triangular and parallelogram SiQD array. The 2DH system can be used in the
design of nanoelectronic devices and binary logic based on nanoscale magnetism.
