  Electrically controlled rotation of spins in a semiconducting channel is a
prerequisite for the successful realization of many spintronic devices, like,
e.g., the spin field effect transistor (sFET). To date, there have been only a
few reports on electrically controlled spin precession in sFET-like devices.
These devices operated in the ballistic regime, as postulated in the original
sFET proposal, and hence need high SOC channel materials in practice. Here, we
demonstrate gate-controlled precession of spins in a non-ballistic sFET using
an array of narrow diffusive wires as a channel between a spin source and a
spin drain. Our study shows that spins traveling in a semiconducting channel
can be coherently rotated on a distance far exceeding the electrons mean free
path, and spin-transistor functionality can be thus achieved in non-ballistic
channels with relatively low SOC, relaxing two major constraints of the
original sFET proposal.
