  In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC),
the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon
system. The n-on-p silicon technology is a promising candidate to achieve a
large area instrumented with pixel sensors, since it is radiation hard and cost
effective. The paper reports on the performance of novel n-on-p edgeless planar
pixel sensors produced by FBK-CMM, making use of the active trench for the
reduction of the dead area at the periphery of the device. After discussing the
sensor technology an overview of the first beam test results will be given.
