  We present a simple liquid assisted processing (LAP) method, to be used
in-situ during pulsed laser deposition growth to give both rapid growth rates
(50 Hz deposition leading to >250 nm/min with a single plume) and strong
pinning (improved x 5-10 over plain standard YBCO films grown at similar
rates). Achieving these two important features simultaneously has been a
serious bottleneck to date. LAP enhances the kinetics of the film growth so
that good crystalline perfection can be achieved at up to 60 x faster growth
rates than normal, while also enabling artificial pinning centres to be self
assembled into fine nanocolumns. In addition, LAP allows for RE mixing (80% of
Y with 20% of Yb, Sm, or Yb+Sm), creating effective point-like disorder within
the REBCO lattice and which leads to strongly improved pinning at 30 K and
below. Overall, LAP is a simple method which could be adopted by other in-situ
physical or vapour deposition methods (i.e PLD, MOCVD, evaporation, etc) to
significantly enhance both growth rate and performance.
