  A new method for the extraction of the electric field in the bulk of heavily
irradiated silicon pixel sensors is presented. It is based on the measurement
of the Lorentz deflection and mobility of electrons as a function of depth. The
measurements were made at the CERN H2 beam line, with the beam at a shallow
angle with respect to the pixel sensor surface. The extracted electric field is
used to simulate the charge collection and the Lorentz deflection in the pixel
sensor. The simulated charge collection and the Lorentz deflection is in good
agreement with the measurements both for non-irradiated and irradiated up to
1E15 neq/cm2 sensors.
