  Silicon carbide (SiC) has become a key player in realization of scalable
quantum technologies due to its ability to host optically addressable spin
qubits and wafer-size samples. Here, we have demonstrated optically detected
magnetic resonance (ODMR) with resonant excitation, and clearly identified the
ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation
of NV centers in SiC has been achieved with Rabi and Ramsey oscillations.
Finally, we show the successful generation and characterization of single
nitrogen vacancy (NV) center in SiC employing ion implantation. Our results are
highlighting the key role of NV centers in SiC as a potential candidate for
quantum information processing.
