  Developing devices using disordered organic semiconductors requires accurate
and practical models of charge transport. In these materials, charge transport
occurs through partially delocalised states in an intermediate regime between
localised hopping and delocalised band conduction. Partial delocalisation can
increase mobilities by orders of magnitude over conventional hopping, making it
important for materials and device design. Although delocalisation, disorder,
and polaron formation can be described using delocalised kinetic Monte Carlo
(dKMC), it is a computationally expensive method. Here, we develop jumping
kinetic Monte Carlo (jKMC), a model that approaches the accuracy of dKMC with a
computational cost comparable to conventional hopping. jKMC achieves its
computational performance by modelling conduction using identical spherical
polarons, yielding a simple delocalisation correction to the Marcus hopping
rate that allows polarons to jump over their nearest neighbours. jKMC can be
used in regimes of partial delocalisation inaccessible to dKMC to show that
modest delocalisation can increase mobilities by as much as two orders of
magnitude.
