  Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes
in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are
calculated by using an empirical tight binding model combined with the
irreducible representations of the group theory. The results are compared with
those of Si and Ge quantum dots with spherical shape. The effects of the shapes
on electronic states in QDs are discussed.
