  We wish to draw an attention to a non-gibbsian behavior of zero-dimensional
semiconductor nanostructures, which appears to be manifested in experiments by
an effect of incomplete depopulation from electronic excited states or by an
effect of up-conversion of electronic level occupation after preparing the
system in the ground state of electronic excitation. In the present work the
effect is interpreted with help of electron-LO-phonon interaction, which is
supposed to play a role in these structures in the form of multiple-scattering
of electron on the optical phonons. Quantum kinetic equation describing the
process of electronic ralaxation with the inclusion of electronic multiple
scattering on phonons is considered. The multiple electron scattering
interpretation of the effect is supported by pointing out a considerable degree
of agreement between the theoretical picture presented and a rather extensive
amount of existing experimental data.
