  We employ density functional theory to investigate the thermoelectric
properties of electron and hole doped PtSb$_2$. Our results show that for
doping of 0.04 holes per unit cell (1.5$\times10^{20}$ cm$^{-3}$) PtSb$_2$
shows a high Seebeck coefficient at room temperature, which can also be
achieved at other temperatures by controlling the carrier concentration (both
electron and hole). The electrical conductivity becomes temperature independent
when the doping exceeds about 0.20 electrons/holes per unit cell. The figure of
merit at 800 K in electron and hole doped PtSb$_2$ is 0.13 and 0.21,
respectively. The thermoelectric efficiency with same host material are
predicted for certain doping levels.
