  Electrostatically confined quantum dots in bilayer graphene have shown
potential as building blocks for quantum technologies. To operate the dots,
e.g., as qubits, a precise understanding and control of the confined states and
their properties is required. Herein, a large-scale numerical characterization
of confined quantum states in bilayer graphene dots is performed over an
extensive range of gate-tunable parameters such as the dot size, depth, shape,
and the bilayer graphene gap. The dot states' orbital degeneracy, wave function
distribution, and valley g-factor are established and the parametric
dependencies to achieve different regimes are provided. It is found that the
dot states are highly susceptible to gate-dependent confinement and material
parameters, enabling efficient tuning of confined states and valley g-factor
modulation by quantum dot design.
