  By combining band gap engineering with the self-organized growth of quantum
dots, we present a scheme of adjusting the mid-infrared absorption properties
to desired energy transitions in quantum dot based photodetectors. Embedding
the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us
to tune the optical transition energy by changing the superlattice period as
well as by changing the growth conditions of the dots. Using a one band
envelope function framework we are able, in a fully three dimensional
calculation, to predict the photocurrent spectra of these devices as well as
their polarization properties. The calculations further predict a strong impact
of the dots on the superlattices minibands. The impact of vertical dot
alignment or misalignment on the absorption properties of this dot/superlattice
structure is investigated. The observed photocurrent spectra of vertically
coupled quantum dot stacks show very good agreement with the calculations.In
these experiments, vertically coupled quantum dot stacks show the best
performance in the desired photodetector application.
