  Electronic analogue of generalized Goos-H\"{a}nchen shifts is investigated in
the monolayer graphene superlattice with one-dimensional periodic potentials of
square barriers. It is found that the lateral shifts for the electron beam
transmitted through the monolayer graphene superlattice can be negative as well
as positive near the band edges of zero-$\bar{k}$ gap, which are different from
those near the band edges of Bragg gap. These negative and positive beam shifts
have close relation to the Dirac point. When the condition $q_A d_A= -q_B d_B=
m \pi$ ($m=1,2,3...$) is satisfied, the beam shifts can be controlled from
negative to positive when the incident energy is above the Dirac point, and
vice versa. In addition, the beam shifts can be greatly enhanced by the defect
mode inside the zero-$\bar{k}$ gap. These intriguing phenomena can be verified
in a relatively simple optical setup, and have potential applications in the
graphene-based electron wave devices.
