  Antiferromagnetic (AFM) skyrmions, which are resistant to both the skyrmion
Hall effect and external magnetic perturbations, are expected to be promising
candidates for next-generation spintronics devices. Despite being observed in
bulk materials and synthetic AFM layered systems, the existence of intrinsic
AFM skyrmions within single magnetic layers, which offer potential advantages
for spintronic device fabrication, has remained elusive. In this work, taking
monolayer CrSi(Te,Se)$_{3}$ as a representative system, we demonstrate the
emergence of intrinsic AFM skyrmions in two-dimensional Janus magnets. It is
found that under moderate compressive strain, the interplay between
considerable Dyzaloshinskii-Moriya interaction and the strain-induced AFM
Heisenberg exchange interaction in monolayer CrSi(Te,Se)$_{3}$ would give rise
to the emergence of intrinsic AFM skyrmions assembled from AFM spin spirals.
Moreover, the application of an external magnetic field could trigger the
emergence of AFM merons as well as a canted AFM state. Our findings propose a
feasible approach for achieving intrinsic AFM skyrmions in realistic systems,
which paves the way for developments in AFM topological spintronics devices.
