  We have demonstrated the millimeter-scale fabrication of monolayer epitaxial
graphene $p-n$ junction devices using simple ultraviolet photolithography,
thereby significantly reducing device processing time compared to that of
electron beam lithography typically used for obtaining sharp junctions. This
work presents measurements yielding nonconventional, fractional multiples of
the typical quantized Hall resistance at $\nu=2$ ($R_H\approx 12906 {\Omega}$)
that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to
take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$.
Additionally, we provide a framework for exploring future device configurations
using the LTspice circuit simulator as a guide to understand the abundance of
available fractions one may be able to measure. These results support the
potential for drastically simplifying device processing time and may be used
for many other two-dimensional materials.
