  The key physical processes governing resolution of focused electron-beam and
ion-beam-assisted chemical vapor deposition are analyzed via an adsorption rate
model. We quantify for the first time how the balance of molecule depletion and
replenishment determines the resolution inside the locally irradiated area.
Scaling laws are derived relating the resolution of the deposits to molecule
dissociation, surface diffusion, adsorption, and desorption. Supporting results
from deposition experiments with a copper metalorganic precursor gas on a
silicon substrate are presented and discussed.
