  We report on resonant tunneling magnetoresistance via localized states
through a ZnSe semiconducting barrier which can reverse the sign of the
effective spin polarization of tunneling electrons. Experiments performed on
Fe/ZnSe/Fe planar junctions have shown that positive, negative or even its
sign-reversible magnetoresistance can be obtained, depending on the bias
voltage, the energy of localized states in the ZnSe barrier and spatial
symmetry. The averaging of conduction over all localized states in a junction
under resonant condition is strongly detrimental to the magnetoresistance.
