  Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions
(MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA)
energy is controlled by both thickness of a CoFeB free layer deposited directly
on the W buffer and a post-annealing process at different temperatures. The PMA
energy as well as the magnetization damping are determined by analysing
field-dependent FMR signals in different field geometries. An optimized MTJ
structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The
macrospin modelling is used to analyse the field- and angular-dependence of the
V-FMR signal and to support experimental magnetization damping extraction.
