  We report on single crystal high mobility organic field-effect transistors
(OFETs) prepared on prefabricated substrates using a "flip-crystal" approach.
This method minimizes crystal handling and avoids direct processing of the
crystal that may degrade the FET electrical characteristics. A chemical
treatment process for the substrate ensures a reproducible device quality. With
limited purification of the starting materials, hole mobilities of 10.7, 1.3,
and 1.4 cm^2/Vs have been measured on rubrene, tetracene, and pentacene single
crystals, respectively. Four-terminal measurements allow for the extraction of
the "intrinsic" transistor channel resistance and the parasitic series contact
resistances. The technique employed in this study shows potential as a general
method for studying charge transport in field-accumulated carrier channels near
the surface of organic single crystals.
