  We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy
of these states can be tuned to zero by gate voltage or magnetic field,
revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance.
Probing these large ZBPs using a weakly dissipative lead reveals non-Fermi
liquid temperature (T) dependence due to environmental Coulomb blockade (ECB),
an interaction effect from the lead acting on the nanowire junction. By
increasing T, these large ZBPs either show a height increase or a transition
from split peaks to a ZBP, both deviate significantly from non-dissipative
devices where a Fermi-liquid T dependence is revealed. Our result demonstrates
the competing effect between ECB and thermal broadening on Andreev bound
states.
