  We study the channel width scaling of back-gated MoS2
metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down
to 60 nm. We reveal that the channel conductance scales linearly with channel
width, indicating no evident edge damage for MoS2 nanoribbons with widths down
to 60 nm as defined by plasma dry etching. However, these transistors show a
strong positive threshold voltage (VT) shift with narrow channel widths of less
than 200 nm. Our results also show that transistors with thinner channel
thicknesses have larger VT shifts associated with width scaling. Devices
fabricated on a 6 nm thick MoS2 crystal underwent the transition from
depletion-mode to enhancement-mode.
