  Transport in InAs/GaSb heterostructures with different InAs layer thicknesses
is studied using a six-terminal Hall bar geometry with a 2-$\mu$m edge channel
length. For a sample with a 12-nm-thick InAs layer, non-local resistance
measurements with various current/voltage contact configurations reveal that
the transport is dominated by edge channels with negligible bulk contribution.
Systematic non-local measurements allow us to extract the resistance of
individual edge channels, revealing sharp resistance uctuations indicative of
inelastic scattering. Our results show that the InAs/GaSb system can be
tailored to have conducting edge channels while keeping a gap in the bulk
region and provide a way of studying 2D topological insulators even when
quantized transport is absent.
