  We report on low-temperature photoconductivity (PC) in n-PbTe(Ga) epitaxial
films prepared by the hot-wall technique on <111>-BaF_2 substrates. Variation
of the substrate temperature allowed us to change the resistivity of the films
from 10^8 down to 10_{-2} Ohm x cm at 4.2 K. The resistivity reduction is
associated with a slight excess of Ga concentration, disturbing the Fermi level
pinning within the energy gap of n-PbTe(Ga). PC has been measured under
continuous and pulse illumination in the temperature range 4.2-300 K. For films
of low resistivity, the photoresponse is composed of negative and positive
parts. Recombination processes for both effects are characterized by
nonexponential kinetics depending on the illumination pulse duration and
intensity. Analysis of the PC transient proves that the negative
photoconductivity cannot be explained in terms of nonequilibrium charge
carriers spatial separation of due to band modulation. Experimental results are
interpreted assuming the mixed valence of Ga in lead telluride and the
formation of centers with a negative correlation energy. Specifics of the PC
process is determined by the energy levels attributed to donor Ga III, acceptor
Ga I, and neutral Ga II states with respect to the crystal surrounding. The
energy level corresponding to the metastable state Ga II is supposed to occur
above the conduction band bottom, providing fast recombination rates for the
negative PC. The superposition of negative and positive PC is considered to be
dependent on the ratio of the densities of states corresponding to the donor
and acceptor impurity centers.
