  A systematic manipulation of the morphology and the optical emission
properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by
changing the growth kinetics parameters. Under non-equilibrium conditions of a
comparatively higher growth rate and low growth temperature, the quantum dot
density, their average size and hence the peak emission wavelength can be tuned
by changing efficiency of the surface diffusion (determined by the growth
temperature) relative to the growth flux. We further observe that the
distribution of quantum dot heights, for samples grown under varying
conditions, if normalized to the mean height, can be nearly collapsed onto a
single Gaussian curve.
