  The inter-device mismatch and intra-device temporal instability in the
nanoscale CMOS circuits is examined from a unified point of view as a static
and dynamic parts of the variability con-cerned with stochastic oxide charge
trapping and de-trapping. This approach has been benchmarked on the recent
evidence of the radiation-induced increase of inter-transistor mismatch in 60
nm ICs. A possible reliability limitation in ultrascale circuits concerned with
the single or a few charged defect instability is pointed out and estimated.
