  The steady state photoconductivity as a function of temperature and light
intensity was measured on plasma deposited highly crystalline undoped
hydrogenated microcrystalline silicon films possessing different thicknesses
and microstructures. Different phototransport behaviors were observed
experimentally in films having dissimilar microstructural attributes. This has
been explained by numerical modeling to link these behaviors to different
features of the proposed density of states maps of the material.
