  We have studied the temperature dependence of low-field magnetoresistance and
current-voltage characteristics of a low-angle bi-crystal grain boundary
junction in perovskite manganite La_{2/3}Sr_{1/3}MnO_3 thin film. By gradually
trimming the junction we have been able to reveal the non-linear behavior of
the latter. With the use of the relation M_{GB} \propto M_{bulk}\sqrt{MR^*} we
have extracted the grain boundary magnetization. Further, we demonstrate that
the built-in potential barrier of the grain boundary can be modelled by
V_{bi}\propto M_{bulk}^2 - M_{GB}^2. Thus our model connects the
magnetoresistance with the potential barrier at the grain boundary region. The
results indicate that the band-bending at the grain boundary interface has a
magnetic origin.
