  We have determined the localization length \xi and the impurity dielectric
susceptibility \chi_{\rm imp} as a function of Ga acceptor concentrations (N)
in nominally uncompensated ^{70}Ge:Ga just below the critical concentration
(N_c) for the metal-insulator transition. Both \xi and \chi_{\rm imp} diverge
at N_c according to the functions \xi\propto(1-N/N_c)^{-\nu} and \chi_{\rm
imp}\propto(N_c/N-1)^{-\zeta}, respectively, with \nu=1.2\pm0.3 and
\zeta=2.3\pm0.6 for 0.99N_c< N< N_c. Outside of this region (N<0.99N_c), the
values of the exponents drop to \nu=0.33\pm0.03 and \zeta=0.62\pm0.05. The
effect of the small amount of compensating dopants that are present in our
nominally uncompensated samples, may be responsible for the change of the
critical exponents at N\approx0.99N_c.
