  Growth of epitaxial gold silicide islands on bromine-passivated Si(111)
substrates has been studied by optical and electron microscopy, electron probe
micro analysis and helium ion backscattering. The islands grow in the shape of
equilateral triangles up to a critical size beyond which the symmetry of the
structure is broken, resulting in a shape transition from triangle to
trapezoid. The island edges are aligned along $Si[110]$ directions. We have
observed elongated islands with aspect ratios as large as 8:1. These islands,
instead of growing along three equivalent [110] directions on the Si(111)
substrate, grow only along one preferential direction. This has been attributed
to the vicinality of the substrate surface.
