  III-V semiconductor nanowires have shown great potential in various quantum
transport experiments. However, realizing a scalable high-quality
nanowire-based platform that could lead to quantum information applications has
been challenging. Here, we study the potential of selective area growth by
molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer
layers. The buffered geometry allows for substantial elastic strain relaxation
and a strong enhancement of field effect mobility. We show that the networks
possess strong spin-orbit interaction and long phase coherence lengths with a
temperature dependence indicating ballistic transport. With these findings, and
the compatibility of the growth method with hybrid epitaxy, we conclude that
the material platform fulfills the requirements for a wide range of quantum
experiments and applications.
