  In the paper the version of the field effect tunnel nano transistor on
quantum well is researched, where the control voltage is applied to the
barriers surrounding the quantum well, and electron drain comes from the
quantum well. Electrons tunnel into the quantum well through the first half of
the two-humped tunnel barrier (double heterojunction) formed by the sandwich of
three layers of wide band 2D semiconductors (graphene derivatives: perhydrooxy
grafen (COH)n, fluoro graphen (CF)n, grafan (CH)n) essentially differing in
locations of the bottom level of the conduction band. The middle layer - fluoro
graphen (CF)n has the lowest bottom of the conduction band, which forms the
quantum well with depth of ~ 3 eV and a width of ~ 0.6 nm in the total tunnel
potential barrier of 1.8 nm width, and serves as a channel for the flow of
electrons. Metal electrode of source and metal electrode of gate adjacent to
the outer layers of 2D semiconductor sandwich - perhydrooxy grafen (COH)n and
grafan (CH)n, respectively, form the common "gate" of sandwich with size 22*22
nm^2. A metal drain electrode with a width of 10 nm and with the potential on 1
V higher than that of the first electrode (source) are in contact with the
middle layer of fluoro graphen (CF)n, beyond of the sandwich having for this
purpose the width of 35 nm greater than that of the outer semiconductor layers
2D internal three-layer sandwich. The potential of the gate opening is 0.62 V.
The maximum operating current Isd is ~ 2*10^(-5) A. Current flowing in a closed
state theoretically is equal to zero, and the parasitic current flowing through
the gate electrode in the open state Ig = Ileak is ~ 10^(-10) A. Quantum
capacitance of the transistor would allow the device to operate at a frequency
of up to 10^12 Hz.
