  The evolution with carrier concentration of the electrical properties of
amorphous indium oxide (InO) thin films has been studied using electronic
double layer transistor configurations. Carrier variations of up to 7 X 10^(14)
carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The
superconductor-insulator transition was traversed and the magnitude and
position of the large magnetoresistance peak found in the insulating regime
were modified. The systematic variation of the magnetoresistance peak with
charge concentration was found to be qualitatively consistent with a simulation
based on a model involving granularity.
