  Perpendicularly magnetized materials have attracted tremendous interest due
to their high anisotropy, which results in extremely narrow, nano-sized domain
walls. As a result, the recently studied current-induced domain wall motion
(CIDWM) in these materials promises to enable a novel class of data, memory,
and logic devices. In this letter, we propose the spin Hall effect as a
radically new mechanism for CIDWM. We are able to carefully tune the net spin
Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique
control over CIDWM. Furthermore, we determine that the depinning efficiency is
intimately related to the internal structure of the domain wall, which we
control by small fields along the nanowire. This new manifestation of CIDWM
offers a very attractive new degree of freedom for manipulating domain wall
motion by charge currents, and sheds light on the existence of contradicting
reports on CIDWM in perpendicularly magnetized materials.
