  Spectroscopic studies of semiconductor quantum dots (SQDs) addressing the
problem of non-radiative carrier losses is vital for the improvement in the
efficiency of various light-emitting devices. Various designs of SQDs emitter
like doping, forming core-shell and alloying has been attempted to suppress
non-radiative recombination. In this article, we show that forming a hybrid
with metal nanoparticles (MNP) having localized surface plasmon resonance
overlapped with the emission spectrum of SQD, the non-radiative carrier loss
via Auger recombination can be mitigated. Using steady-state and time-resolved
photoluminescence, it has been shown that when such hybrid is selectively
excited well above the bandgap without exciting plasmon, the contribution to
fast decay time reduces along with an increase in contributions to longer decay
times. A completely reverse kinetics is observed when exciton and plasmon are
simultaneously excited. Such control of photoluminescence kinetics by placing
MNP near SQD opens up a new method for designing hybrid materials that are well
suited for light-emitting devices.
