  We present a systematic study of the exciton/electron-hole plasma
photoluminescence dynamics in bulk GaAs for various lattice temperatures and
excitation densities. The competition between the exciton and electron-hole
pair recombination dominates the onset of the luminescence. We show that the
metal-to-insulator transition, induced by temperature and/or excitation
density, can be directly monitored by the carrier dynamics and the
time-resolved spectral characteristics of the light emission. The dependence on
carrier density of the photoluminescence rise time is strongly modified around
a lattice temperature of 49 K, corresponding to the exciton binding energy (4.2
meV). In a similar way, the rise-time dependence on lattice temperature
undergoes a relatively abrupt change at an excitation density of 120-180x10^15
cm^-3, which is about five times greater than the calculated Mott density in
GaAs taking into account many body corrections.
