  Graphene Oxide and reduced Graphene Oxide are intriguing materials for
photonics and electronic devices both for intrinsic characteristics and as
precursors for the synthesis of graphene. Whatever the application and the
engineering purpose, a fine control of the chemical and physical properties is
required since the performances of graphene based systems depend on the
reduction state of Graphene Oxide and can be strongly affected by interfaces
interactions and neighboring effects. Then, a method for a local control of
electric, electronic and chemical properties is required. The synergic
application of Near Edge X ray Absorption Fine Structure Spectroscopy and
Conductive Atomic Force Microscopy is a powerful way for such purpose allowing
a full characterization of simple and composite samples, including specimens
with dielectric discontinuities. Graphene Oxide/Gold (GO/Au) and Graphene
Oxide/Silicon Oxide (GO/SiO2) have been selected as proof by example. The
results show that the approach allow to relate chemical, electronic and
physical properties to morphological features and local conductance behavior.
