  Molybdenum disulfide has recently emerged as a promising two-dimensional
semiconducting material for nano-electronic, opto-electronic and spintronic
applications. However, demonstrating spin-transport through a semiconducting
MoS2 channel is challenging. Here we demonstrate the electrical spin injection
and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance
(MR) around 1% has been observed at low temperature through a 450nm long, 6
monolayer thick channel with a Co/MgO spin injector and detector. From a
systematic study of the bias voltage, temperature and back-gate voltage
dependence of MR, it is found that the hopping via localized states in the
contact depletion region plays a key role for the observation of the
two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly
suppressed in the multilayer MoS2 channel for in-plan spin injection. The
underestimated long spin diffusion length (~235nm) and large spin lifetime
(~46ns) open a new avenue for spintronic applications using multilayer
transition metal dichalcogenides.
