  We report on the MBE-growth and magnetotransport properties of p-type BeMnTe,
a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures
can be grown almost lattice matched to GaAs for Mn concentrations up to 10%
using solid source MBE. A high p-type doping with nitrogen can be achieved by
using an RF-plasma source. BeMnTe and BeTe layers have been characterized by
magneto-transport measurements. At low temperatures, the BeMnTe samples exhibit
a large anomalous Hall effect. A hysteresis in the anomalous Hall effect
appears below 2.5K in the most heavily doped sample, which indicates the
occurrence of a ferromagnetic phase.
