  Electrically driven single-photon sources are essential for building compact,
scalable and energy-efficient quantum information devices. Recently, color
centers in SiC emerged as promising candidates for such nonclassical light
sources. However, very little is known about how to control, dynamically tune
and switch their single-photon electroluminescence (SPEL), which is required
for efficient generation of single photons on demand. Here, we propose and
theoretically demonstrate a concept of a gate-tunable single-photon emitting
diode, which allows not only to dynamically tune the SPEL rate in the range
from 0.6 to 40 Mcps but also to switch it on and off in only 0.2 ns.
