  Systematic measurements of auto- and cross-correlations of photons emitted
from individual CdTe/ZnTe quantum dots under pulsed excitation were used to
elucidate non-resonant excitation mechanisms in this self-assembled system.
Memory effects extending over a few excitation pulses have been detected in
agreement with previous reports and quantitatively described by a rate equation
model, fitting a complete set of correlation and PL intensity results. The
important role of single carrier trapping in the quantum dot was established.
An explanation was suggested for the unusually wide antibunching dip observed
previously in X-X autocorrelation experiments on quantum dots under cw
excitation.
