  The PZT/FeGa thin film memtranstor was prepared and the modulation of the
magnetoelectric coefficient by external magnetic and electric fields was
studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be
reversed by flipping the direction of magnetization of FeGa or ferroelectric
polarization of PZT. Notably, the sign of the magnetoelectric coefficient can
be switched repeatedly by reversing ferroelectric polarization of PZT when the
external magnetic field remains constant. Moreover, the binary switching
behavior can still be maintained under zero DC bias magnetic field. When the
polarization direction remains stable, the magnetoelectric coefficient also
does not change. This means that the magnetoelectric coefficient of PZT/FeGa is
non-volatile. Furthermore, the retention and endurance characteristics of the
PZT/FeGa thin film memtranstor have been investigated. These findings
demonstrate the potential of the PZT/FeGa thin film memtranstor for
non-volatile memory applications.
