  We investigate the electric field induced resistive switching effect and
magnetic field induced fraction enlargement on a polycrystalline sample of a
colossal magnetoresistive compound displaying intrinsic phase coexistence. Our
data show that the electric effect (presumably related to the presence of
inhomogeinities) is present in a broad temperature range(300 to 20 K), being
observable even in a mostly homogeneous ferromagnetic state. In the temperature
range in which low magnetic field determines the phase coexistence fraction,
both effects, though related to different mechanisms, are found to determine
multilevel nonvolatile memory capabilities simultaneously.
