  The broad tunability of the proximity exchange effect between
transition-metal dichalcogenides (TMDCs) and chromium iodide (CrI$_3$)
heterostructures offers intriguing possibilities for the use of TMDCs in
two-dimensional magnetoelectrics. In this work, the influence of the twist
angle and the gate electric field on the electric and thermal transport in a
TMDC/CrI$_3$ junction is investigated using the Dirac -Bogoliubov-de Gennes
equation. We show that significant amounts can be controlled by spin-splitting
of band structures due to spin-orbit interaction, and that the
exchange-splitting of bands arises from the proximity effect. The property of
the Andreev reflection (AR) process is highly dependent on the spin valley
polarized states due to spin-orbit coupling. Remarkably, perfect spin valley
polarized AR is possible over a wide bias range by using a gate voltage to tune
the local Fermi energy and varying the type of charge doping. The proposed
structure with $p$-type doping is found to have larger spin valley polarized
Andreev conductance and high thermal conductance. We further show that,
depending on the TMDC material and chemical potential of the TMDC/CrI$_3$
layer, twisting can lead to suppression or a significant increase in Andreev
conductance as well as enhancement of thermal conductance for chemical
potentials smaller than that of the superconducting regime.
