  We studied the weak field Hall voltage in 2D electron layers in Si-MOS
structures with different mobilities, through the metal-insulator transition.
In the vicinity of the critical density on the metallic side of the transition,
we have found weak deviations (about 6-20 %) of the Hall voltage from its
classical value. The deviations do not correlate with the strong temperature
dependence of the diagonal resistivity rho_{xx}(T). The smallest deviation in
R_{xy} was found in the highest mobility sample exhibiting the largest
variation in the diagonal resistivity \rho_{xx} with temperature (by a factor
of 5).
