  This paper presents and evaluates a novel method for generating power losses
on transistors avoiding high currents. These could heat up the circuit tracks,
affecting the accurate thermal modeling of the system. The proposed procedure
is based on the transistor current regulation with low gate voltages and the
linearity between power and temperature, being useful for all transistor
technologies (Si, SiC and GaN). Through this method, low DC currents are enough
to bring transistors to their thermal limits. Thermal stability issues and
their differences between technologies are discussed and an experimental
validation of the method is carried out.
