  Voltage driven magneto-electric (ME) switching of ferro-magnets has shown
potential for future low-energy spintronic memories. In this paper, we first
analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to
writability, readability and switching speed. Our analysis is based on a
coupled magnetization dynamics and electron transport model. Subsequently, we
show that the decoupled read/write path of ME-MTJs can be utilized to construct
an energy-efficient dual port memory. Further, we also propose a novel content
addressable memory (CAM) exploiting the compact XNOR operation enabled by
ME-XNOR device.
