  We discuss Fermi-edge singularity effects on the linear and nonlinear
transient response of an electron gas in a doped semiconductor. We use a
bosonization scheme to describe the low energy excitations, which allows to
compute the time and temperature dependence of the response functions. Coherent
control of the energy absorption at resonance is analyzed in the linear regime.
It is shown that a phase-shift appears in the coherent control oscillations,
which is not present in the excitonic case. The nonlinear response is
calculated analytically and used to predict that four wave-mixing experiments
would present a Fermi-edge singularity when the exciting energy is varied. A
new dephasing mechanism is predicted in doped samples that depends linearly on
temperature and is produced by the low-energy bosonic excitations in the
conduction band.
