  We investigate the electronic and transport properties of gated bilayer
graphene with one corrugated layer, which results in a stacking AB/BA boundary.
When a gate voltage is applied to one layer, topologically protected gap states
appear at the corrugation, which reveal as robust transport channels along the
stacking boundary. With increasing size of the corrugation, more localized,
quantum-well-like states emerge. These finite-size states are also conductive
along the fold, but in contrast to the stacking boundary states, which are
gapless, they present a gap. We have also studied periodic corrugations in
bilayer graphene; our findings show that such corrugations between AB- and
BA-stacked regions behave as conducting channels that can be easily identified
by their shape.
