  This work investigates energy filtering in nanowires, where pass and
stopbands are obtained by including superlattices in the wire. When a pair of
such superlattices is placed in series, each being controlled by a gate, it can
act as a transistor where the (mis-)alignment of its minibands turns the device
on (off). It is shown that, in the ballistic current-regime, the transition
between the on and off state occurs in a narrow gate-bias range, giving rise to
sub-60 mV per decade switching behavior.
