  Junctionless oxide-based neuron thin-film transistors with in-plane-gate
structure are fabricated at room temperature with a laser scribing process. The
neuron transistors are composed of a bottom ITO floating gate and multiples of
two in-plane control gates. The control gates, coupling with the floating gate,
control the "on" and "off" of the transistor. Effective field-effect modulation
of the drain current has been realized. AND logic is demonstrated on a dual
in-plane gate neuron transistor. The developed laser scribing technology is
highly desirable in terms of the fabrication of high performance neuron
transistors with low-cost.
