  We report on a new type of single-electron transistor (SET) comprising two
highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al
island to two Al outer electrodes. These resistors replace small-area oxide
tunnel junctions of traditional SETs. Our transistor with a total asymptotic
resistance of 110 kOhm showed a very sharp Coulomb blockade and reproducible,
deep and strictly e-periodic gate modulation in wide ranges of bias currents I
and gate voltages V_g. In the Coulomb blockade region (|V| < 0.5 mV), we
observed a strong suppression of the cotunneling current allowing appreciable
modulation curves V-V_g to be measured at currents I as low as 100 fA. The
noise figure of our SET was found to be similar to that of typical Al/AlOx/Al
single-electron transistors.
