  Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure
where an appropriate doping of the multiplication layer (p+) leads to high
enough electric fields for impact ionization. Gain factors of few tens in
charge significantly improve the resolution of timing measurements,
particularly for thin detectors, where the timing performance was shown to be
limited by Landau fluctuations. The main obstacle for their operation is the
decrease of gain with irradiation, attributed to effective acceptor removal in
the gain layer. Sets of thin sensors were produced by two different producers
on different substrates, with different gain layer doping profiles and
thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected
charge and leakage current was compared before and after irradiation with
neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient
Current Technique and charge collection measurements with LHC speed electronics
were employed to characterize the detectors. The thin LGAD sensors were shown
to perform much better than sensors of standard thickness (~300 um) and offer
larger charge collection with respect to detectors without gain layer for
fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of
LGADs. Pions were found to be more damaging than neutrons at the same
equivalent fluence, while no significant difference was found between different
producers. At very high fluences and bias voltages the gain appears due to deep
acceptors in the bulk, hence also in thin standard detectors.
