  We report on studies of the magnetoresistance in strongly correlated 2D
electron system in Si in the critical regime, in the close vicinity of the 2D
metal-insulator transition. We performed self-consistent comparison of our data
with solutions of two equations of the cross-over renormalization group (CRG)
theory which describes temperature evolutions of the resistivity and
interaction parameters for 2D electron system. We found a good agreement
between the \rho(T,B) data and the RG theory in a wide range of the in-plane
fields, 0-2.1 T. This agreement supports the interpretation of the observed 2D
MIT as the true quantum phase transition.
