  Largely motivated by a number of applications, the dispersion ($C_3$)
coefficients for the interaction of a Cs atom with different material media
such as Au (metal), Si (semiconductor) and various dielectric surfaces like
SiO$_2$, SiN$_{\rm{x}}$, sapphire and YAG are determined using accurate values
of the dynamic polarizabilities of the Cs atom obtained employing the
relativistic coupled-cluster approach and the dynamic dielectric constants of
the walls. Moreover, we also give the retardation coefficients in the graphical
representation as functions of separation distances to describe the interaction
potentials between the Cs atom with the above considered material media. For
the easy access to the interaction potentials at a given distance of
separation, we devise a simple working functional fitting form for the retarded
coefficients in terms of two parameters that are quoted for each medium.
