  Memristors are continuously tunable resistors that emulate synapses.
Conceptualized in the 1970s, they traditionally operate by voltage-induced
displacements of matter, but the mechanism remains controversial. Purely
electronic memristors have recently emerged based on well-established physical
phenomena with albeit modest resistance changes. Here we demonstrate that
voltage-controlled domain configurations in ferroelectric tunnel barriers yield
memristive behaviour with resistance variations exceeding two orders of
magnitude and a 10 ns operation speed. Using models of ferroelectric-domain
nucleation and growth we explain the quasi-continuous resistance variations and
derive a simple analytical expression for the memristive effect. Our results
suggest new opportunities for ferroelectrics as the hardware basis of future
neuromorphic computational architectures.
