  Tin Sulphide (SnS) thin films have been recognized as a potential candidate
for solar cells. Many fabrication techniques have been used to grow SnS thin
films. The band-gap, ${\rm E_g}$ of SnS films as reported in literature, were
found to vary from 1.2-2.5 eV depending on the film fabrication technique. The
present work reports the structural, compositional, morphological and optical
characterization of SnS thin films fabricated by thermal evaporation at room
temperature. Results show that for the given fabrication technique/ condition,
the band-gap functionally depends on the lattice parameter and grain size. The
well-defined variation allows for tailoring SnS film as per requirement.
