  The optical spin Hall effect (OSHE) is a transport phenomenon of exciton
polaritons in semiconductor microcavities, caused by the polaritonic spin-orbit
interaction, that leads to the formation of spin textures. In the semiconductor
cavity, the physical basis of the spin orbit coupling is an effective magnetic
field caused by the splitting of transverse-electric and transverse-magnetic
(TE-TM) modes. The spin textures can be observed in the near field (local spin
distribution of polaritons), and as light polarization patterns in the more
readily observable far field. For future applications in spinoptronic devices,
a simple and robust control mechanism, which establishes a one-to-one
correspondence between stationary incident light intensity and far-field
polarization pattern, is needed. We present such a control scheme, which is
made possible by a specific double-microcavity design.
