  Antiferromagnetic spintronics is an emerging field; antiferromagnets can
improve the functionalities of ferromagnets with higher response times, and
having the information shielded against external magnetic field. Moreover, a
large list of aniferromagnetic semiconductors and metals with N\'eel
temperatures above room temperature exists. In the present manuscript, we
persevere in the quest for the limits of how large can anisotropic
magnetoresistance be in antiferromagnetic materials with very large spin-orbit
coupling. We selected IrMn as a prime example of first-class moment (Mn) and
spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an
antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have
been performed. The metal/insulator structure with magnetic coupling between
both layers allows the measurement of the modulation of the transport
properties exclusively in the antiferromagnetic layer. Anisotropic
magnetoresistance as large as 0.15 % has been found, which is much larger than
that for a bare IrMn layer. Interestingly, it has been observed that
anisotropic magnetoresistance is strongly influenced by the field cooling
conditions, signaling the dependence of the found response on the formation of
domains at the magnetic ordering temperature.
