  In this work we present a study on the impact of various intrinsic
deformations like ripples, twist, wrap on the electronic properties of
ultra-short monolayer MoS2 channels. The effect of deformation (3-7o twist or
wrap and 0.3-0.7 buckling amplitude) on a 3.5 nm planar monolayer MoS2 MOSFET
is evaluated by the density functional theory and the non-equilibrium Green`s
function (DFT-NEGF) approach. We study the channel density of states,
transmission spectra and the ID-VD characteristics under the varying
conditions, with focus on the negative differential resistance (NDR) behavior.
Our results show significant change in the NDR peak to valley ratio (PVR) and
the NDR window with such minor intrinsic deformations, especially with the
rippling.
