  Broadband integrated thin-film lithium niobate (TFLN) electro-optic
modulators (EOM) are desirable for optical communications and signal processing
in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we
design and demonstrate Mach-Zehnder (MZ) EOM devices in a hybrid platform based
on TFLN bonded to foundry-fabricated silicon photonic waveguides. Using a
single silicon lithography step and a single bonding step, we realize MZ EOM
devices which cover both wavelength ranges on the same chip. The EOM devices
achieve 100 GHz EO bandwidth (referenced to 1 GHz) and about 2-3 V$.$cm
figure-of-merit ($V_\pi L$) with low on-chip optical loss in both the O-band
and C-band.
