  We present a newly developed facility, comprised of a combinatorial laser
molecular beam epitaxy system and an in-situ scanning tunneling microscopy
(STM). This facility aims at accelerating the materials research in a highly
efficient way, by advanced high-throughput film synthesis techniques and
subsequent fast characterization of surface morphology and electronic states.
Compared with uniform films deposited by conventional methods, the so-called
combinatorial thin films will be beneficial to determining the accurate phase
diagrams of different materials due to the improved control of parameters such
as chemical substitution and sample thickness resulting from a rotarymask
method. A specially designed STM working under low-temperature and ultra-high
vacuum conditions is optimized for the characterization of combinatorial thin
films, in an XY coarse motion range of 15 mm $\times$ 15 mm and with
sub-micrometer location precision. The overall configuration as well as some
key aspects like sample holder design, scanner head, and sample/tip/target
transfer mechanism are described in detail. The performance of the device is
demonstrated by synthesizing high-quality superconducting FeSe thin films with
gradient thickness, imaging surfaces of highly oriented pyrolytic graphite, Au
(111), Bi2Sr2CaCu2O8+{\delta} (BSCCO) and FeSe. In addition, we have also
obtained clean noise spectra of tunneling junctions and the superconducting
energy gap of BSCCO. The successful manufacturing of such a facility opens a
new window for the next generation of equipment designed for experimental
materials research.
