  An n-channel accumulation-type field effect transistor (FET) has been
fabricated utilizing a KTaO3 single crystal as an active element and a
sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an
ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room
temperature, both of which are much better than those of the SrTiO3 FETs
reported previously. The field effect mobility was almost temperature
independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface
is worthy of further investigations as an alternative system of future oxide
electronics.
