  GaV$_4$S$_8$ is a multiferroic semiconductor hosting N{\'e}el-type magnetic
skyrmions dressed with electric polarization. At T$_s$ = 42K, the compound
undergoes a structural phase transition of weakly first-order, from a
non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral
structure at low temperatures. Below T$_s$, ferroelectric domains are formed
with the electric polarization pointing along any of the four $\left< 111
\right>$ axes. Although in this material the size and the shape of the
ferroelectric-ferroelastic domains may act as important limiting factors in the
formation of the N{\'e}el-type skyrmion lattice emerging below T$_C$=13\:K, the
characteristics of polar domains in GaV$_4$S$_8$ have not been studied yet.
Here, we report on the inspection of the local-scale ferroelectric domain
distribution in rhombohedral GaV$_4$S$_8$ using low-temperature piezoresponse
force microscopy. We observed mechanically and electrically compatible lamellar
domain patterns, where the lamellae are aligned parallel to the (100)-type
planes with a typical spacing between 100 nm-1.2 $\mu$m. We expect that the
control of ferroelectric domain size in polar skyrmion hosts can be exploited
for the spatial confinement and manupulation of N{\'e}el-type skyrmions.
