  We have calculated band-edge energies for most combinations of zincblende
AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is
strained to the other. Calculations were done for three different geometries,
quantum wells, wires, and dots, and mean effective masses were computed in
order to estimate confinement energies. For quantum wells, we have also
calculated band-edges for ternary alloys. Energy gaps, including confinement,
may be easily and accurately estimated using band energies and a simple
effective mass approximation, yielding excellent agreement with experimental
results. By calculating all material combinations we have identified novel and
interesting material combinations, such as artificial donors, that have not
been experimentally realized. The calculations were perfomed using
strain-dependent k-dot-p theory and provide a comprehensive overview of band
structures for strained heterostructures.
