  In this work we give a characterization of the RF effect of memory switching
on Nb-Al/AlOx-(Nb)-Pd$_{0.99}$Fe$_{0.01}$-Nb Josephson junctions as a function
of magnetic field pulse amplitude and duration, alongside with an
electrodynamical characterization of such junctions, in comparison with
standard Nb-Al/AlOx-Nb tunnel junctions. The use of microwaves to tune the
switching parameters of magnetic Josephson junctions is a step in the
development of novel addressing schemes aimed at improving the performances of
superconducting memories.
