  Extensive researches have revealed that valley, a binary degree of freedom
(DOF), can be an excellent candidate of information carrier. Recently, valley
DOF has been introduced into photonic systems, and several valley-Hall photonic
topological insulators (PTIs) have been experimentally demonstrated. However,
in the previous valley-Hall PTIs, topological kink states only work at a single
frequency band, which limits potential applications in multiband waveguides,
filters, communications, and so on. To overcome this challenge, here we
experimentally demonstrate a valley-Hall PTI, where the topological kink states
exist at two separated frequency bands, in a microwave substrate-integrated
circuitry. Both the simulated and experimental results demonstrate the
dual-band valley-Hall topological kink states are robust against the sharp
bends of the internal domain wall with negligible inter-valley scattering. Our
work may pave the way for multi-channel substrate-integrated photonic devices
with high efficiency and high capacity for information communications and
processing.
