  The temperature dependent Hall mobility data from La-doped SrTiO3 thin films
has been analyzed and modeled considering various electron scattering
mechanisms. We find that a ~6 meV transverse optical phonon (TO) deformation
potential scattering mechanism is necessary to explain the dependence of
transport on temperature between 10-200 K. Also, we find that the low
temperature electron mobility in intrinsic (nominally undoped) SrTiO3 is
limited by acoustic phonon scattering. Adding the above two scattering
mechanisms to longitudinal optical phonon (LO) and ionized impurity scattering
mechanisms, excellent quantitative agreement between mobility measurement and
model is achieved in the whole temperature range (2-300K) and carrier
concentrations ranging over a few orders of magnitude (8x1017 cm-3 - 2x1020
cm-3).
