  Electron transport studies for AlGaN/GaN two-dimensional electron gases is
presented. Novel defects in the III-V nitrides are treated theoretically for
two-dimensional transport. Theory of electron scattering by charged dislocation
lines is presented for realistic two-dimensional electron gases. The theory
lets us draw new conclusions about the nature of charges residing in the
dislocation in the III-V nitrides. The theory leads to the recognition of the
fact that current state of the art highest mobility values are limited
intrinsically and not due to removable defects. Ways of bypassing the intrinsic
limits to achieve higher mobilities are proposed.
