  We have investigated the effect of nitrogen (N2) as a carrier gas on the
growth of vertical graphene nanosheets (VGN) by plasma enhanced chemical vapor
deposition (PECVD). It is demonstrated that addition of nitrogen gas with a
hydrocarbon precursor can enhance the nucleation and growth rate of graphitic
base layer as well as vertical sheets. The gas also simultaneously acts as an
etchant and a dopant element. The density of vertical sheets increases up to
certain limit and start to decrease with further increase in N2 concentration.
The synthesized VGN exhibit sheet resistance from 0.89 to 1.89 K{\Omega}/sq.
and mobility from 8.05 to 20.14 cm2/V-s, depending on the morphology and type
of carrier concentration. These results reveal that the surface morphology and
electronic properties of VGN can be tuned by incorporation of nitrogen gas
during the growth phase.
