  In this work, we report on the growth of high-mobility $\beta$-Ga$_2$O$_3$
homoepitaxial thin films grown at a temperature much lower than the
conventional growth temperature window for metalorganic vapor phase epitaxy.
Low-temperature $\beta$-Ga$_2$O$_3$ thin films grown at 600$^{\circ}$C on
Fe-doped (010) bulk substrates exhibits remarkable crystalline quality which is
evident from the measured room temperature Hall mobility of 186 cm$^2$/Vs for
the unintentionally doped films. N-type doping is achieved by using Si as a
dopant and controllable doping in the range of 2$\times$10$^{16}$ -
2$\times$10$^{19}$ cm$^{-3}$ is studied. Si incorporation and activation is
studied by comparing silicon concentration from secondary ion mass spectroscopy
(SIMS) and electron concentration from temperature-dependent Hall measurements.
The films exhibit high purity (low C and H concentrations) with a very low
concentration of compensating acceptors (2$\times$10$^{15}$ cm$^{-3}$) even at
this growth temperature. Additionally, abrupt doping profile with forward decay
of $\sim$ 5nm/dec (10 times improvement compared to what is observed for thin
films grown at 810$^{\circ}$C) is demonstrated by growing at a lower
temperature.
