  Zero-dimensional graphene quantum dots (GQD) dispersed in conducting polymer
matrix display a striking range of optical, mechanical, and thermoelectric
properties which can be utilized to design next-generation sensors and low-cost
thermoelectric. This exotic electrical property in GQDs is achieved by
exploiting the concentration of the GQDs and by tailoring the functionalization
of the GQDs. However, despite extensive investigation, the nonlinear
resistivity behavior leading to memristive like characteristic has not been
explored much. Here, we report electrical characterisation of nitrogen
functionalized GQD (NGQD) embedded in a polyaniline (PANI) matrix. We observe a
strong dependence of the resistance on current and voltage history, the
magnitude of which depends on the NGQD concentration and temperature. We
explain this memristive property using a phenomenological model of the
alignment of PANI rods with a corresponding charge accumulation arising from
the NGQD on its surface. The NGQD-PANI system is unique in its ability to
matrix offers a unique pathway to design neuromorphic logic and synaptic
architectures with crucial advantages over existing systems.
