  Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate
structures have been fabricated after growth of contacted suspended single wall
nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron
Fabry-Perot interferences are observed in the FETs indicating ballistic
transport in the coated structures. Reliable production of high-performance
SWNT FETs has been obtained by combining patterned growth of SWNT arrays with
feed-back controlled electrical breakdown to select desired semiconducting
SWNTs, making large-scale SWNT FET fabrication achievable. P-type and n-type
passivated SWNT FETs have been realized through dopant-selective nanotube
coatings, which enables the fabrication of active circuits based on
complementary device structures.
