  We have performed low-temperature transport experiments on a Si/SiGe hole
system. The measured transverse and longitudinal condductivities $\sigma_{xx}$
and $\sigma_{xy}$ allow us to study the magnetic-field-induced transitions in
the system. In particular, we present the first study of the temperature-driven
flow lines in the "anomalous Hall insulator" regime near a Landau level filling
factor $\nu=1.5$. The "anomalous" temperature-driven flow lines could be due to
the unusual energy level scheme in a Si/SiGe hole system. Moreover, for
$3<\nu<5$, there is a temperature-independent point in $\rho_{xx} (B)$,
$\rho_{xy} (B)$, $\sigma_{xx}$, and $\sigma_{xy}$ which corresponds to a
boundary of the quantum phase transition.
