  We have studied magnetic properties of heavily Mn-doped
[(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam
epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%)
was obtained by decreasing the growth temperature to 190 degC. When the
thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or thinner than 10
nm, the reflection high-energy electron diffraction (RHEED) pattern and
transmission electron microscopy (TEM) show no MnAs clustering, indicating that
a homogeneous single crystal with good quality was grown. In the magnetic
circular dicroism (MCD) measurement, large MCD intensity and high Curie
temperature of 130 K were observed.
