  We investigated Capacitance-Voltage (C-V) characteristics of the Depletion
Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent
method incorporating Quantum Mechanical (QM) effects. Though the experimental
results of C-V for enhancement type device is available in recent literature, a
complete characterization of electrostatic property of depletion type Buried
Channel Quantum Well FET (QWFET) structure is yet to be done. C-V
characteristics of the device is studied with the variation of three important
process parameters: Indium (In) composition, gate dielectric and oxide
thickness. We observed that inversion capacitance and ballistic current tend to
increase with the increase in Indium (In) content in InGaAs barrier layer.
