  Measurements in GaAs hole bilayers with unequal layer densities reveal a
pronounced magneto-resistance hysteresis at the magnetic field positions where
either the majority or minority layer is at Landau level filling factor one. At
a fixed field in the hysteretic regions, the resistance exhibits an unusual
time dependence, consisting of random, bidirectional jumps followed by slow
relaxations. These anomalies are apparently caused by instabilities in the
charge distribution of the two layers.
