  We have realized quantized charge pumping using non-adiabatic single-electron
pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The
dopant-free III-V platform allows for ambipolar devices, such as p-i-n
junctions, that could be combined with such pumps to form electrically-driven
single photon sources. Our pumps operate at up to 0.95 GHz and achieve
remarkable performance considering the relaxed experimental conditions:
one-gate pumping in zero magnetic field and temperatures up to 5K, driven by a
simple RF sine waveform. Fitting to a universal decay cascade model yields
values for the figure of merit $\delta$ that compare favorably to reported
modulation-doped GaAs pumps operating under similar conditions. The devices
reported here are already suitable for optoelectronics applications, and with
further improvement could offer a route to a current standard that does not
require sub-Kelvin temperatures and high magnetic fields.
