  Since the beginnings of the electronic age, a quest for ever faster and
smaller switches has been initiated, since this element is ubiquitous and
foundational in any electronic circuit to regulate the flow of current. Mott
insulators are promising candidates to meet this need as they undergo extremely
fast resistive switching under electric field. However the mechanism of this
transition is still under debate. Our spatially-resolved {\mu}-XRD imaging
experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show
that the resistive switching is associated with the creation of a conducting
filamentary path consisting in an isostructural compressed phase without any
chemical nor symmetry change. This clearly evidences that the resistive
switching mechanism is inherited from the bandwidth-controlled Mott transition.
This discovery might hence ease the development of a new branch of electronics
dubbed Mottronics.
