  Granular aluminum is a promising material for high kinetic inductance devices
such as qubit circuits. It has the advantage over atomically disordered
materials such as NbN_x, to maintain a high kinetic inductance concomitantly
with a high quality factor. We show that high quality nano-scale granular
aluminum films having a sharp superconducting transition with normal state
resistivity values of the order of 1x10^5 \mu\Omega cm and kinetic inductance
values of the order of 10 nH/sq can be obtained, surpassing state of the art
values. We argue that this is a result of the different nature of the
metal-to-insulator transition, being electronic correlations driven (Mott type)
in the former and disorder driven (Anderson type) in the latter.
