  Tunneling field-effect transistors (TFETs) based on 2D materials are
promising steep sub-threshold swing (SS) devices due to their tight gate
control. There are two major methods to create the tunnel junction in these 2D
TFETs: electrical and chemical doping. In this work, design guidelines for both
electrically and chemically doped 2D TFETs are provided using full band
atomistic quantum transport simulations in conjunction with analytic modeling.
Moreover, several 2D TFETs' performance boosters such as strain, source doping,
and equivalent oxide thickness (EOT) are studied. Later on, these performance
boosters are analyzed within a novel figure-of-merit plot (i.e. constant
ON-current plot).
