  The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by
Oxygen ion implantation of an undoped single crystalline Ge wafer of
orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted
wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer
has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX)
layer of good quality crystalline Germanium oxide with thickness around 0.62
micron. The crystalline BOX layer has hexagonal crystal structure with lattice
constants close to the standard values. Raman Spectroscopy, cross-sectional
HRTEM with SAED and EDS established that the top Ge layer was recrystallized
during annealing with faceted crystallites. The top layer has a small tensile
strain of around +0.4\% and has estimated dislocation density of 2.7 x
10^{7}cm^{-2}. The thickness, crystallinity and electrical characteristics of
the top layer and the quality of the BOX layer of GeO_{2} are such that it can
be utilized for device fabrication.
