  Electron Backscatter Diffraction (EBSD) is a technique to obtain
microcrystallographic information from materials by collecting large-angle
Kikuchi patterns in the scanning electron microscope (SEM). An important
fundamental question concerns the scattering-angle dependent electron energy
distribution which is relevant for the formation of the Kikuchi diffraction
patterns. Here we review the existing experimental data and explore the
effective energy spectrum that is operative in the generation of backscatter
Kikuchi patterns from silicon. We use a full pattern comparison of experimental
data with dynamical electron diffraction simulations. Our energy-dependent
cross-correlation based pattern matching approach establishes improved
constraints on the effective Kikuchi pattern energy spectrum which is relevant
for high-resolution EBSD pattern simulations and their applications.
