  In this paper we perform, by means of Discontinuous Galerkin (DG) Finite
Element Method (FEM) based numerical solvers for Boltzmann-Poisson (BP)
semiclassical models of hot electronic transport in semiconductors, a numerical
study of reflective boundary conditions in the BP system, such as specular
reflection, diffusive reflection, and a mixed convex combination of these
reflections, and their effect on the behavior of the solution. A boundary layer
effect is observed in our numerical simulations for the kinetic moments related
to diffusive and mixed reflection.
