  In periodic systems, electronic wave functions of the eigenstates exhibit the
periodically modulated Bloch phases and are characterized by their wave numbers
${\bf k}$. We theoretically address the effects of the Bloch phase in general
layered materials with stacking shift. When the interlayer shift and the Bloch
wave vector ${\bf k}$ satisfy certain conditions, interlayer transitions of
electrons are prohibited by the interference of the Bloch phase. We specify the
manifolds in the ${\bf k}$ space where the hybridization of the Bloch states
between the layers is suppressed in accord with the stacking shift. These
manifolds, named stacking-adapted interference manifolds (SAIM), are obviously
applicable to general layered materials regardless of detailed atomic
configuration within the unit cell. We demonstrate the robustness and
usefulness of the SAIM with first-principles calculations for layered boron
nitride, transition-metal dichalcogenide, graphite, and black phosphorus. We
also apply the SAIM to general three-dimensional crystals to derive special
${\bf k}$-point paths for the respective Bravais lattices, along which the
Bloch-phase interference strongly suppresses the band dispersion. Our theory
provides a general and novel view on the anisotropic electronic kinetics
intrinsic to the periodic-lattice structure.
