  We report on the deterministic fabrication of sub-um mesa structures
containing single quantum dots by in-situ electron-beam lithography. The
fabrication method is based on a two-step lithography process using a
low-temperature cathodoluminescence (CL) spectroscopy setup. In the first step
the position and spectral features of single InGaAs quantum dots (QDs) are
detected by CL. Then circular sub-um mesa-structures are exactly defined by
high-resolution electron-beam lithography and subsequent etching in the second
step. CL spectroscopy and micro-photoluminscence spectroscopy demonstrate the
high optical quality of the single-QD mesa-structures with emission linewidths
below 15 ueV and g(2)(0) = 0.04. Our lithography method allows for an alignment
precision better than 100 nm which paves the way for a fully-deterministic
device technology using in-situ CL lithography.
