  In this review article we discuss the recent progress in studying ballistic
transport for charge carriers in graphene through highly inhomogenous magnetic
field known as magnetic barrier in combination with gate voltage induced
electrostatic potential. Starting with cases for a single or double magnetic
barrier we also review the progress in understanding electron transport through
the superlattices created out of such electromagnetic potential barriers and
discuss the possibility of experimental realization of such systems. The
emphasis is particularly on the analogy of such transport with propagation of
light wave through medium with alternating dielectric constant. In that
direction we discuss electron analogue of optical phenomena like fabry perot
resonances, negative refraction, Goos-H\"anchen effect, beam collimation in
such systems and explain how such analogy is going to be useful for device
generation. The resulting modification of band structure of dirac fermions, the
emergence of additional dirac points was also discussed accompanied by brief
section on the interconvertibility of electric and magnetic field for
relativistic dirac fermions. We also discuss the effect of such electromagnetic
potential barrier on bilayer graphene in a similar framework.
