  We theoretically consider the problem of doping induced insulator to metal
transition in bulk semiconductors by obtaining the transition density as a
function of compensation, assuming that the transition is an Anderson
localization transition controlled by the Ioffe-Regel-Mott (IRM) criterion. We
calculate the mean free path, on the highly doped metallic side, arising from
carrier scattering by the ionized dopants, which we model as quenched random
charged impurities. The Coulomb disorder of the charged dopants is screened by
the carriers themselves, leading to an integral equation for localization,
defined by the density-dependent mean free path being equal to the inverse of
the Fermi wave number, as dictated by the IRM criterion. Solving this integral
equation approximately analytically and exactly numerically, we provide
detailed results for the localization critical density for the doping induced
metal-insulator transition.
