  We propose a scheme to generate metal-insulator transition in random binary
layer (RBL) model, which is constructed by randomly assigning two types of
layers. Based on a tight-binding Hamiltonian, the localization length is
calculated for a variety of RBLs with different cross section geometries by
using the transfer-matrix method. Both analytical and numerical results show
that a band of extended states could appear in the RBLs and the systems behave
as metals by properly tuning the model parameters, due to the existence of a
completely ordered subband, leading to a metal-insulator transition in
parameter space. Furthermore, the extended states are irrespective of the
diagonal and off-diagonal disorder strengths. Our results can be generalized to
two- and three-dimensional disordered systems with arbitrary layer structures,
and may be realized in Bose-Einstein condensates.
