  We demonstrate over 3 kV gate-pad-connected field plated (GPFP)
$\beta$-Ga$_2$O$_3$ lateral MESFETs with high lateral figure of merit (LFOM)
using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown
ohmic contact layers. Using an improved low-temperature MOVPE selective area
epitaxy process, we show that a total contact resistance to the channel as low
as 1.4 $\Omega$.mm can be achieved.The GPFP design adopted here using PECVD
(plasma-enhanced chemical vapor deposition) deposited SiN$_x$ dielectric and
SiN$_x$/SiO$_2$ wrap-around passivation exhibits up to ~14% improved R$_{ON}$,
up to ~70% improved breakdown voltage (V$_{BR}$ = V$_{DS}$ - V$_{GS}$)
resulting in up to $\sim$3$\times$ higher LFOM compared to non-FP
$\beta$-Ga$_2$O$_3$ lateral MESFETs. The V$_{BR}$ (~2.5 kV) and LFOM (355
MW/cm$^2$) measured simultaneously in our GPFP $\beta$-Ga$_2$O$_3$ lateral
MESFET (with L$_{GD}$ = 10 $\mu$m) is the highest value achieved in any
depletion-mode $\beta$-Ga$_2$O$_3$ lateral device.
