  To get stable perpendicularly magnetized tunnel junctions at small device
dimensions, composite free layers that comprise two MgO/FeCoB interfaces as
sources of interface anisotropy are generally used. Proper cristallisation and
annealing robustness is typically ensured by the insertion of a spacer layer of
the early transition metal series within the FeCoB layer. We study the
influence of the spacer thickness and growth condition on the switching metrics
of tunnel junctions thermally annealed at 400$^\circ$C for the case of 1-4
\r{A} Ta spacers. Thick Ta spacer results in a large anisotropies indicative of
a better defined top FeCoB/MgO interface, but this is achieved at the
systematic expense of a stronger damping. For the best anisotropy-damping
compromise, junctions of diameter 22 nm can still be stable and spin-torque
switched. Coercivity and inhomogeneous linewidth broadening, likely arising
from roughness at the FeCoB/Ta interface, can be reduced if a sacrificial Mg
layer is inserted before the Ta spacer deposition.
