  We study a Josephson junction involving a Weyl and a multi-Weyl semimetal
separated by a barrier region of width $d$ created by putting a gate voltage
$U_0$ over the Weyl semimetal. The topological winding number of such a
junction changes across the barrier. We show that $I_c R_N$ for such junctions,
where $I_c$ is the critical current and $R_N$ the normal state resistance, in
the thin barrier limit, has a universal value independent of the barrier
potential. We provide an analytical expression of the Andreev bound states and
use it to demonstrate that the universal value of $I_c R_N$ is a consequence of
change in topological winding number across the junction. We also study AC
Josephson effect in such a junction in the presence of an external microwave
radiation, chart out its current-voltage characteristics, and show that the
change in the winding number across the junction shapes the properties of its
Shapiro steps. We discuss the effect of increasing barrier thickness $d$ on the
above-mentioned properties and chart out experiments which may test our theory.
