  The strain engineering technique allows us to alter the electronic properties
of graphene in various ways. Within the continuum approximation, the influences
of strain result in the appearance of a pseudo-gauge field and modulated Fermi
velocity. In this study, we investigate theoretically the effect of linear
uniaxial tensile strain and/or stress, which makes the Fermi velocity
anisotropic, on a magnetized graphene sheet in the presence of an applied
electrostatic voltage. More specifically, we analyze the consequences of the
anisotropic nature of the Fermi velocity on the structure Landau levels and de
Haas - van Alphen (dHvA) quantum oscillation in the magnetized graphene sheet.
The effect of the direction of the applied strain has also been discussed.
