  We describe the fabrication of homogeneous sub-stoichiometric titanium
nitride films for microwave kinetic inductance detector (mKID) arrays. Using a
6 inch sputtering target and a homogeneous nitrogen inlet, the variation of the
critical temperature over a 2 inch wafer was reduced to <25 %. Measurements of
a 132-pixel mKID array from these films reveal a sensitivity of 16 kHz/pW in
the 100 GHz band, comparable to the best aluminium mKIDs. We measured a noise
equivalent power of NEP = 3.6e-15 W/Hz^(1/2). Finally, we describe possible
routes to further improve the performance of these TiN mKID arrays.
