  Although the band topology of ZrGeSe has been studied via magnetic torque
technique, the electronic transport behaviors related to the relativistic
Fermions in ZrGeSe are still unknown. Here, we first report systematic
electronic transport properties of high-quality ZrGeSe single crystals under
magnetic fields up to 14 T. Resistivity plateaus of temperature dependent
resistivity curves both in the presence and absence of magnetic fields as well
as large, non-saturating magnetoresistance in low-temperature region were
observed. By analyzing the temperature- and angular-dependent Shubnikov-de Haas
oscillations and fitting it via the Lifshitz-Kosevich (LK) formula with the
Berry phase being taken into account, we proved that Dirac fermions dominate
the electronic transport behaviors of ZrGeSe and the presence of non-trivial
Berry phase. First principles calculations demonstrate that ZrGeSe possesses
Dirac bands and normal bands near Fermi surface, resulting in the observed
magnetotransport phenomena. These results demonstrate that ZrGeSe is a
topological nodal-line semimetal, which provides a fundamentally important
platform to study the quantum physics of topological semimetals.
