  Generation of photocurrents in semiconducting materials requires dissociation
of excitons into free charge carriers. While thermal agitation is sufficient to
induce dissociation in most bulk materials, an additional push is required to
induce efficient dissociation of the strongly bound excitons in monolayer
transition-metal dichalcogenides (TMDs). Recently, static in-plane electric
fields have proven to be a promising candidate. In the present paper, we
introduce a numerical procedure, based on exterior complex scaling, capable of
computing field-induced exciton dissociation rates for a wider range of field
strengths than previously reported in literature. We present both Stark shifts
and dissociation rates for excitons in various TMDs calculated within the
Mott-Wannier model. Here, we find that the field induced dissociation rate is
strongly dependent on the dielectric screening environment. Furthermore,
applying weak-field asymptotic theory (WFAT) to the Keldysh potential, we are
able to derive an analytical expression for exciton dissociation rates in the
weak-field region.
