  We evaluate the limiting efficiency of full and partial solar spectrum
harvesting via the process of internal photoemission in Au-semiconductor
Schottky junctions. Our results based on the ab initio calculations of the
electron density of states (e-DOS) reveal that the limiting efficiency of the
full-spectrum Au converter based on hot electron injection is below 4%. This
value is even lower than previously established limit based on the parabolic
approximation of the Au electron energy bands. However, we predict limiting
efficiency exceeding 10% for the hot holes collection through the Schottky
junction between Au and p-type semiconductor. Furthermore, we demonstrate that
such converters have more potential if used as a part of the hybrid system for
harvesting high- and low-energy photons of the solar spectrum.
