  Antiferromagnetic transition metal oxides are an established and widely
studied materials system in the context of spin-based electronics, commonly
used as passive elements in exchange bias-based memory devices. Currently,
major interest has resurged due to the recent observation of long-distance spin
transport, current-induced switching, and THz emission. As a result, insulating
transition metal oxides are now considered to be attractive candidates for
active elements in novel spintronic devices. Here, we discuss some of the most
promising materials systems and highlight recent advances in reading and
writing antiferromagnetic ordering. This article aims to provide an overview of
the current research and potential future directions in the field of
antiferromagnetic insulatronics.
