  This paper details the investigation of the influence of different disorders
in two-dimensional topological insulator systems. Unlike the phase transitions
to topological Anderson insulator induced by normal Anderson disorder, a
different physical picture arises when bond disorder is considered. Using Born
approximation theory, an explanation is given as to why bond disorder plays a
different role in phase transition than does Anderson disorder. By comparing
phase diagrams, conductance, conductance fluctuations, and the localization
length for systems with different types of disorder, a consistent conclusion is
obtained. The results indicate that a topological Anderson insulator is
dependent on the type of disorder. These results are important for the doping
processes used in preparation of topological insulators.
