  Charging up the surface of an insulator after beam impact can lead either to
reverse sign of field between the surface and collector of electrons for case
of thick sample or appearance of very high internal field for thin films. Both
situations discard correct measurements of secondary electron emission (SEE)
and can be avoided via reducing the beam dose. The single pulse method with
pulse duration of order of tens microseconds has been used. The beam pulsing
was carried out by means of an analog switch introduced in deflection plate
circuit which toggles its output between "beam on" and "beam off" voltages
depending on level of a digital pulse. The error in measuring the beam current
for insulators with high value of SEE was significantly reduced due to the use
for this purpose a titanium sample having low value of the SEE with DC method
applied. Results obtained for some not coated insulators show considerable
increase of the SEE after baking out at 3500C what could be explained by the
change of work function. Titanium coatings on alumina exhibit results close to
the ones for pure titanium and could be considered as an effective
antimultipactor coating.
