  We investigate the effect of uniaxial stress on InGaAs quantum dots in a
charge tunable device. Using Coulomb blockade and photoluminescence, we observe
that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to
variable tuning of exciton energies (+18 to -0.9 micro-eV/MPa) under tensile
stress. Modest tuning of the permanent dipole, Coulomb interaction and
fine-structure splitting energies is also measured. We exploit the variable
exciton response to tune multiple quantum dots on the same chip into resonance.
