  Tin doped indium oxide (ITO) thin films are being used extensively as
transparent conductors in several applications. In the present communication,
we report the electrical transport in DC magnetron sputtered ITO thin films in
low temperatures (25-300 K). The low temperature Hall effect and resistivity
measurements reveal that the ITO thin films are moderately dis-ordered (kfl~1)
and degenerate semiconductor. The transport of charge carriers in these
disordered ITO thin films takes place via the de-localized states. The disorder
effects lead to the well- known metal-insulator transition; this transition is
observed at 110 K in ITO thin films. The metal-insulator behaviour is explained
by the quantum correction to the conductivity (QCC); this approach is based on
the quantum-mechanical interference effects in the disordered systems. The
insulating behaviour is attributed to the combined effect of the weak
localization and the electron-electron interactions.
