  The electron spin resonance (ESR) of two-dimensional electrons is
investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR
resonance frequency can be turned by means of a gate voltage. The front and
back gates of the heterostructure produce opposite g-factor shift, suggesting
that electron g-factor is being electrostatically controlled by shifting the
equilibrium position of the electron wave function from one epitaxial layer to
another with different g-factors.
