  Quantum technology relies on proper hardware, enabling coherent quantum state
control as well as efficient quantum state readout. In this regard,
wide-bandgap semiconductors are an emerging material platform with scalable
wafer fabrication methods, hosting several promising spin-active point defects.
Conventional readout protocols for such defect spins rely on fluorescence
detection and are limited by a low photon collection efficiency. Here, we
demonstrate a photo-electrical detection technique for electron spins of
silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further,
we show coherent spin state control, proving that this electrical readout
technique enables detection of coherent spin motion. Our readout works at
ambient conditions, while other electrical readout approaches are often limited
to low temperatures or high magnetic fields. Considering the excellent maturity
of SiC electronics with the outstanding coherence properties of SiC defects the
approach presented here holds promises for scalability of future SiC quantum
devices.
