  On-chip optical waveguides with low propagation losses and precisely
engineered group velocity dispersion (GVD) are important to nonlinear photonic
devices such as soliton microcombs. Yet, despite intensive research efforts,
nonlinear integrated photonic platforms still feature propagation losses orders
of magnitude higher than in standard optical fiber. The tight confinement and
high index contrast of integrated waveguides make them highly susceptible to
fabrication induced surface roughness. Therefore, microresonators with
ultra-high Q factors are, to date, only attainable in polished bulk
crystalline, or chemically etched silica based devices, that pose however
challenges for full photonic integration. Here, we demonstrate the fabrication
of silicon nitride ($\mathrm{Si_3N_4}$) waveguides with unprecedentedly smooth
sidewalls and tight confinement with record low propagation losses. This is
achieved by combining the photonic Damascene process with a novel reflow
process, which reduces etching roughness, while sufficiently preserving
dimensional accuracy. This leads to previously unattainable \emph{mean}
microresonator Q factors larger than $5\times10^6$ for tightly confining
waveguides with anomalous dispersion. Via systematic process step variation and
two independent characterization techniques we differentiate the scattering and
absorption loss contributions, and reveal metal impurity related absorption to
be an important loss origin. Although such impurities are known to limit
optical fibers, this is the first time they are identified, and play a tangible
role, in absorption of integrated microresonators. Taken together, our work
provides new insights in the origins of propagation losses in
$\mathrm{Si_3N_4}$ waveguides and provides the technological basis for
integrated nonlinear photonics in the ultra-high Q regime.
