  Topological insulators (TIs) and topological crystal insulators (TCIs)
exhibit exotic surface properties. We present optimised growth procedures to
obtain high quality bulk crystals of the TCIs Pb_(1-x)Sn_(x)Te and
Pb_(1-x)Sn_(x)Se, and nanowires from the bulk crystals using the
vapour-liquid-solid (VLS) technique. Nanowires of Pb_(1-x)Sn_(x)Te have been
produced with a Sn composition of approx. x = 0.25, at which a transition from
trivial to non-trivial insulator is reported. The results obtained on the
growth of nanomaterials of Pb_(1-x)Sn_(x)Se are also described. Detailed
characterisation of the bulk crystals and the nanomaterials through x-ray
diffraction, microscopy techniques and EDX analysis are presented.
