  Integrated photonic platforms have proliferated in recent years, each
demonstrating its own unique strengths and shortcomings. However, given the
processing incompatibilities of different platforms, a formidable challenge in
the field of integrated photonics still remains for combining the strength of
different optical materials in one hybrid integrated platform. Silicon carbide
is a material of great interest because of its high refractive index, strong
second and third-order non-linearities and broad transparecy window in the
visible and near infrared. However, integrating SiC has been difficult, and
current approaches rely on transfer bonding techniques, that are time
consuming, expensive and lacking precision in layer thickness. Here, we
demonstrate high index Amorphous Silicon Carbide (a-SiC) films deposited at
150$^{\circ}$C and verify the high performance of the platform by fabricating
standard photonic waveguides and ring resonators. The intrinsic quality factors
of single-mode ring resonators were in the range of $Q_{int} =
(4.7-5.7)\times10^5$ corresponding to optical losses between 0.78-1.06 dB/cm.
We then demonstrate the potential of this platform for future heterogeneous
integration with ultralow loss thin SiN and LiNbO$_3$ platforms.
