  It is shown that the Kerr rotation of spin-polarized electrons is modulated
by the distance of the electrons from the sample surface. Time-resolved Kerr
rotation of optically-excited spin-polarized electrons in the depletion layer
of n-doped GaAs displays fast oscillations that originate from an interference
between the light reflected from the semiconductor surface and from the front
of the electron distribution moving into the semiconductor. Using this effect,
the dynamics of the photogenerated charge carriers in the depletion layer of
the biased Schottky barrier is measured.
