  We report on a technique enabling electrical control of the contact
silicidation process in silicon nanowire devices. Undoped silicon nanowires
were contacted by pairs of nickel electrodes and each contact was selectively
silicided by means of the Joule effect. By a realtime monitoring of the
nanowire electrical resistance during the contact silicidation process we were
able to fabricate nickel-silicide/silicon/nickel- silicide devices with
controlled silicon channel length down to 8 nm.
