  This work presents a comparison of the structural, chemical and electronic
properties of multi-layer graphene grown on SiC(000-1) by using two different
growth approaches: thermal decomposition and chemical vapor deposition (CVD).
The topography of the samples was investigated by using atomic force microscopy
(AFM), and scanning electron microscopy (SEM) was performed to examine the
sample on a large scale. Raman spectroscopy was used to assess the
crystallinity and electronic behavior of the multi-layer graphene and to
estimate its thickness in a non-invasive way. While the crystallinity of the
samples obtained with the two different approaches is comparable, our results
indicate that the CVD method allows for a better thickness control of the grown
graphene.
