  The chirality-induced spin selectivity (CISS) effect enables the detection of
chirality as electrical charge signals. It is often studied using a
two-terminal circuit geometry where a ferromagnet is connected to a chiral
component, and a change of electrical resistance is reported upon magnetization
reversal. This is however not expected in the linear response regime because of
compensating reciprocal processes, limiting the interpretation of experimental
results. Here we show that magnetoresistance effects can indeed appear even in
the linear response regime, either by changing the magnitude or the direction
of the magnetization or an applied magnetic field. We illustrate this in a
spin-valve device and in a chiral thin film as the CISS-induced Hanle
magnetoresistance (CHMR) effect. This effect helps to distinguish
spin-transport-related effects from other effects, and can thereby provide
further insight into the origin of CISS.
