  Continued dimensional scaling of semiconductor devices has driven information
technology into vastly diverse applications. As the size of devices approaches
fundamental limits, metrology techniques with nanometre resolution and
three-dimensional (3D) capabilities are desired for device optimisation. For
example, the performance of an ultra-scaled transistor can be strongly
influenced by the local electric field and strain. Here we study the spectral
response of single erbium ions to applied electric field and strain in a
silicon ultra-scaled transistor. Stark shifts induced by both the overall
electric field and the local charge environment are observed. Further, changes
in strain smaller than $3\times 10^{-6}$ are detected, which is around two
orders of magnitude more sensitive than the standard techniques used in the
semiconductor industry. These results open new possibilities for
non-destructive 3D mapping of the local strain and electric field in the
channel of ultra-scaled transistors, using the single erbium ions as
ultra-sensitive atomic probes.
