  Transport of charge carriers can be controlled by doping through chemical and
physical means. Unlike chemical doping, physical doping is carried out by a
special technique through gate voltages in a field-effect transistor geometry.
This technique keeps the carrier channels free from defects without
complications from the crystalline structure and the dopant impurity sites. In
this paper we discuss the occurrence of superconductivity at the interface of a
device by an unconventional technique. We examine a dynamical pairing mechanism
governed by the excitons in the active device. The pairing of charge carriers
takes place when the system is in a nonequilibrium (driven) state. We discuss
the physics of a plausible superconducting transition and suggest new
experiments.
