  To utilize half-metallic Heusler alloys in practical spintronic devices, such
as magnetic sensors and magnetic memories, the key is to realize highly
textured and structurally ordered polycrystalline thin films. In this study, we
fabricated polycrystalline Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy films deposited
on a [001]-oriented Ag buffer layer, which was achieved by introducing N2 into
Ar during the sputtering process, on a thermally oxidized Si substrate. We
obtained strongly [001]-oriented CFGG films with B2 ordering and a high
saturation magnetization close to the theoretical value, which can provide
highly spin-polarized electric and spin current sources in spintronic devices
with industrial viability.
