  A magnetic-field-driven transition from metallic- to semiconducting-type
behavior in the basal-plane resistance takes place in highly oriented pyrolytic
graphite at a field $H_c \sim 1~$kOe applied along the hexagonal c-axis. The
analysis of the data reveals a striking similarity between this transition and
that measured in thin-film superconductors and Si MOSFET's. However, in
contrast to those materials, the transition in graphite is observable at almost
two orders of magnitude higher temperatures.
