  The resistive switching (RS) properties as a function of temperature were
studied for Ag/La$_{1-x}$Sr$_x$CoO$_3$ (LSCO) interfaces. The LSCO is a
fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO$_3$
substrate. Both low and a high resistance states were set at room temperature
and the temperature dependence of their current-voltage (IV) characteristics
was mea- sured taking care to avoid a significant change of the resistance
state. The obtained non-trivial IV curves of each state were well reproduced by
a circuit model which includes a Poole-Frenkel element and two ohmic
resistances. A microscopic description of the changes produced by the RS is
given, which enables to envision a picture of the interface as an area where
conductive and insulating phases are mixed, producing Maxwell-Wagner
contributions to the dielectric properties.
