  We have fabricated 4-element Graphene/Silicon on Insulator (SOI) based
Schottky barrier photodiode array ()PDA and investigated its optoelectronic
device performance. In our device design, monolayer graphene is utilized as
common electrode on lithographically defined linear array of n-type Si channels
on SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy
measurements, each element in the PDA structure exhibited a maximum spectral
responsivity comparable to that of commercially available photodiodes operating
under self-powered operational mode. Time-dependent photocurrent spectroscopy
measurements showed excellent photocurrent reversibility of the device. The
study presented here is expected to offer exciting opportunities in terms of
high value-added graphene/Si based PDA device applications such as
multi-wavelength light measurement, level metering, high-speed photometry,
position/motion detection, and more.
