  Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular
dark-field scanning transmission electron microscopy (HAADF-STEM) are used to
investigate the crystal structure of ramp-edge junctions between
superconducting electron-doped Nd$_\text{1.85}$Ce$_\text{0.15}$CuO$_\text{4}$
and superconducting hole-doped La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$
thin films, the latter being the top layer. On the ramp, a new growth mode of
La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ with a 3.3 degree tilt of the
c-axis is found. We explain the tilt by developing a strain accommodation model
that relies on facet matching, dictated by the ramp angle, indicating that a
coherent domain boundary is formed at the interface. The possible implications
of this growth mode for the creation of artificial domains in morphotropic
materials are discussed.
