  In the present work, we have investigated ballistic quantum transport in
vertical halo implanted p plus minus GaSb InAs n TFETs. We have investigated
the current voltage characteristics, ON current, OFF current leakage,
subthreshold swing variation as function of gate length, drain length, gate
undercut, equivalent oxide thickness, High K and drain thickness. The
electrostatic control, I V performances and optimization of device structure
are carried out for novel L shaped nonlinear geometry n TFETs. In the n TFETs
device p plus minus GaSb InAs heterostructure gives rise to type III broken gap
band alignment. In this geometry the gate electric field and tunnel junction
internal field are oriented in same direction and assist the Band to Band
tunnelling process. To study the ballistic quantum transport in this L shaped
nonlinear geometry we used 3 D, full-band atomistic sp3d5s spin orbital coupled
tight binding method based quantum mechanical simulator which works on the
basis of Non Equilibrium Green Function formalism to solve coupled Poisson Schr
"odinger equation self consistently for potentials and Local Density of state.
