  Hyperuniform disordered photonic materials have recently been shown to
display large, complete photonic band gaps and isotropic optical properties,
and are emerging as strong candidates for a plethora of optoelectronic
applications, making them competitive with many of their periodic and
quasiperiodic counterparts. In this work, high quality factor optical cavities
in hyperuniform disordered architectures are fabricated through semiconductor
slabs and experimentally addressed by scanning near-field optical microscopy.
The wide range of confined cavity modes that we detect arise from carefully
designed local modifications of the dielectric structure. Previous works on
hyperuniform disordered photonic systems have previously identified several
Anderson localized states spectrally located at the PBG edges with relatively
high quality factors. In this work, by engineering the structural parameters of
the cavity, we achieve an experimental quality factor of order 6000 (higher
than the one of the Anderson states) and we demonstrate that three types of
localized modes of different nature coexist within a small area and in a
relatively narrow spectral window of the disordered correlated system. Their
compatibility with general boundary constraints, in contrast with ordered
architectures that suffer strict layout constraints imposed by photonic
crystals' axes orientation, makes optical cavities in disordered hyperuniform
patterns a flexible optical insulator platform for planar optical circuits.
