  Factors determining the carrier distribution in InGaN/GaN
multiple-quantum-well (MQW) light-emitting diodes (LEDs) are studied via
photoluminescence and temperature-dependent electroluminescence spectra.
Employing a dichromatic LED device, we demonstrate that the carrier
recombination rate should be considered playing an important role in
determining the carrier distribution in the MQW active region, not just the
simple hole characteristics such as low mobility and large effective mass.
