  We report on the controlled growth of h-BN/graphite by means of molecular
beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an
interface without any reaction or intermixing, while the angle resolved
photoemission spectroscopy (ARPES) measurements show that the h-BN layers are
epitaxially aligned with graphite. A well-defined band structure is revealed by
ARPES measurement, reflecting the high quality of the h-BN films. The measured
valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the
presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate
that, although only weak van der Waals interactions are present between h-BN
and graphite, a long range ordering of h-BN can be obtained even on
polycrystalline graphite via van der Waals epitaxy, offering the prospect of
large area, single layer h-BN.
