  Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of
GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been
widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$
multilayers on Silicon substrates using a so far unreported Ge precursor. The
characterization of multilayers with various periodicities reveals successful
layer-by-layer growth with electron density contrast and absence of chemical
intermixing, down to a periodicity of 2 atomic layers.
