  We have investigated the depletion voltage changes, the leakage current
increase and the charge collection efficiency of a silicon microstrip detector
identical to those used in the inner layers of the BaBar Silicon Vertex Tracker
(SVT) after heavy non-uniform irradiation. A full SVT module with the front-end
electronics connected has been irradiated with a 0.9 GeV electron beam up to a
peak fluence of 3.5 x 10^14 e^-/cm^2, well beyond the level causing substrate
type inversion. We irradiated one of the two sensors composing the module with
a non-uniform profile with sigma=1.4 mm that simulates the conditions
encountered in the BaBar experiment by the modules intersecting the horizontal
machine plane. The position dependence of the charge collection properties and
the depletion voltage have been investigated in detail using a 1060 nm LED and
an innovative measuring technique based only on the digital output of the chip.
