  Quadratic-response theory is shown to provide a conceptually simple but
accurate approximation for the self-consistent one-electron potential of
semiconductor nanostructures. Numerical examples are presented for GaAs/AlAs
and InGaAs/InP (001) superlattices using the local-density approximation to
density-functional theory and norm-conserving pseudopotentials without
spin-orbit coupling. When the reference crystal is chosen to be the
virtual-crystal average of the two bulk constituents, the absolute error in the
quadratic-response potential for Gamma(15) valence electrons is about 2 meV for
GaAs/AlAs and 5 meV for InGaAs/InP. Low-order multipole expansions of the
electron density and potential response are shown to be accurate throughout a
small neighborhood of each reciprocal lattice vector, thus providing a further
simplification that is confirmed to be valid for slowly varying envelope
functions. Although the linear response is about an order of magnitude larger
than the quadratic response, the quadratic terms are important both
quantitatively (if an accuracy of better than a few tens of meV is desired) and
qualitatively (due to their different symmetry and long-range dipole effects).
