  Using first-principles computations, we study the effect of epitaxial strains
on electronic structure variations across ZnSe/ZnTe nano-heterostructures.
Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe
heterostructures. We find that a wide range of band gaps (spanning the visible
solar spectrum) and band offsets (0-1.5 eV) is accessible across the
heterostructures in a controllable manner via reasonable levels of epitaxial
strain. In addition to quantum confinement effects, strain in ZnSe/ZnTe
heterostructures may thus be viewed as a powerful degree of freedom that can
enable the rational design of optoelectronic devices.
