  We have derived general boundary conditions (BC) for the multiband envelope
functions (which do not contain spurious solutions) in semiconductor
heterostructures with abrupt heterointerfaces. These BC require the
conservation of the probability flux density normal to the interface and
guarantee that the multiband Hamiltonian be self--adjoint. The BC are energy
independent and are characteristic properties of the interface. Calculations
have been performed of the effect of the general BC on the electron energy
levels in a potential well with infinite potential barriers using a coupled two
band model. The connection with other approaches to determining BC for the
envelope function and to the spurious solution problem in the multiband k.p
model are discussed.
