  A powerful new impurity solver is shown to permit a systematic study of the
doping driven Mott transition in a one-band Hubbard model within the framework
of single-site dynamical mean field theory. At small dopings and large
interaction strengths we are able access low enough temperatures that a
reliable extrapolation to temperature T=0 may be performed, and ground state
energies of insulating and metallic states may be compared. We find that the
T=0 doping-driven transition is of second order and is characterized by an
interaction-strength dependent electronic compressibility, which vanishes at
the critical interaction strength of the half filled model. Over wide parameter
ranges the compressibility is substantially reduced relative to the
non-interacting system. The metal insulator transition is characterized by the
appearance of in-gap states, but these are relevant only for very low dopings
of less than 3%.
