  In this article, we review recent work about time dependent quantum transport
through a quantum dot in Kondo regime. This represents a major step towards
designing next generation transistors that are expected to replace current
MOSFET's in a few years. We first discuss the effects of the density of states
of gold contacts on the instantaneous conductance of an asymmetrically coupled
quantum dot that is abruptly moved into Kondo regime via a gate voltage. Next,
we investigate the effect of strong electron-phonon coupling on the dot on the
instantaneous conductance. Finally, we discuss thermoelectric effects using
linear response Onsager relations for a quantum dot that is either abruptly
moved into Kondo regime or driven sinusoidally via a gate voltage. We explain
encountered peculiarities in transport based on the behaviour of the density of
states of the dot and the evolution of the Kondo resonance.
