  We investigate real- and lattice-spin currents controlled by strain in a
silicene-based junction, where chemical potential, perpendicular electric field
and circularly polarized light are applied into the strained barrier. We find
that the junction yields strain filtering effect with perfect strain control of
real- (or lattice-) spin currents. (i) By applying electric field without
circularly polarized light we show that total current is carried by pure
lattice-spin up (or down) electrons tunable by strain. (ii) When circularly
polarized light is irradiated onto silicene sheet without applying electric
field, total current is carried by pure real-spin up (or down) electrons
tunable by strain. High conductance peaks associated with pure real-(or
lattice-) spin currents in case ii(or i) occur at specific magnitude of strain,
yielding strain filtering effect. Magnitudes of filtered strain due to pure
real- (or lattice-) spin currents may be tunable by varying chemical potential.
Sensitivity may be enhanced by increasing thickness of strained barrier.
Significantly, (iii) when both perpendicular electric field and circularly
polarized light are applied, the total current is carried by three species of
electron groups tunable by strain. This may lead to controllable numbers of
electron species to transport. This result shows that strain filtering effect
in a silicene-based junction is quite different from that in graphene junction.
Our work reveals potential of silicene as a nano-electro-mechanical device and
spin-valleytronic applications.
