  WTe$_2$ is a multifunctional quantum material exhibiting numerous emergent
phases in which tuning of the carrier density plays an important role. Here we
demonstrate two non-monotonic changes in the electronic structure of WTe$_2$
upon \textit{in-situ} electron doping. The first phase transition is
interpreted in terms of a shear displacement of the top WTe$_2$ layer, which
realizes a local crystal structure not normally found in bulk WTe$_2$. The
second phase transition is associated with stronger interactions between the
dopant atoms and the host, both through hybridization and electric field. These
results demonstrate that electron-doping can drive structural and electronics
changes in bulk WTe$_2$ with implications for realizing nontrivial band
structure changes in heterointerfaces and devices.
