  We demonstrate a novel type of solar cell, one that uses fixed negative
charges, formed at the interface of n-Si with Al2O3, to generate strong
inversion at the Si surface by electrostatic repulsion. Built-in voltages of up
to 755 mV are found at this interface. To be able to harness this large
built-in voltage, we demonstrate a new photovoltaic device concept, where the
photocurrent, generated in this inversion layer, is extracted via an inversion
layer induced by a high work function PEDOT:PSS top contact, deposited on top
of a passivating and dipole-inducing molecular monolayer. Results of the effect
of the molecular monolayer on device performance yield open-circuit voltages of
up to 550 mV for moderately doped Si, demonstrating the effectiveness of this
contact structure in removing the Fermi level pinning that has hindered past
efforts in developing this type of solar cell with n-type Si.
