  (Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy
(MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and
transport evidence for the existence of strong and robust topological surface
states in this ternary system. Large tunability in transport properties by
varying the Sb doping level has also been observed, where insulating phase
could be achieved at x=0.5. Our results reveal the potential of this system for
the study of tunable topological insulator and metal-insulator transition based
device physics.
