  We present a study of quasi-free-standing monolayer graphene obtained by
intercalation of Au atoms at the interface between the carbon buffer layer
(Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au
intercalation is achieved by deposition of atomically thin Au on the Bu-L
followed by annealing at 850 {\deg}C in an Argon atmosphere. We explore the
intercalation of Au and decoupling of the Bu-L into quasi-free-standing
monolayer graphene by surface science characterizations and electron transport
in top-gated electronic devices. By gate-dependent magnetotransport we find
that the Au-intercalated buffer layer displays all properties of monolayer
graphene, namely gate tunable ambipolar transport across the Dirac point, and
n- or p-type doping depending on the Au content.
