  Experimentally produced graphene sheets exhibit a wide range of mobility
values. Both extrinsic charged impurities and intrinsic ripples (corrugations)
have been suggested to induce long-range disorder in graphene and could be a
candidate for the dominant source of disorder. Here, using large-scale
molecular dynamics and quantum transport simulations, we find that the hopping
disorder and the gauge and scalar potentials induced by the ripples are
short-ranged, in strong contrast with predictions by continuous models, and the
transport fingerprints of the ripple disorder are very different from those of
charged impurities. We conclude that charged impurities are the dominant source
of disorder in most graphene samples, whereas scattering by ripples is mainly
relevant in the high carrier density limit of ultraclean graphene samples (with
a charged impurity concentration < 10 ppm) at room and higher temperatures.
