  We present a theory of the current-voltage characteristics of a magnetic
domain wall between two highly spin-polarized materials, which takes into
account the effect of the electrical bias on the spin-flip probability of an
electron crossing the wall. We show that increasing the voltage reduces the
spin-flip rate, and is therefore equivalent to reducing the width of the domain
wall. As an application, we show that this effect widens the temperature window
in which the operation of a unipolar spin diode is nearly ideal.
