  Single photon emitters in silicon carbide (SiC) are attracting attention as
quantum photonic systems. However, to achieve scalable devices it is essential
to generate single photon emitters at desired locations on demand. Here we
report the controlled creation of single silicon vacancy ($V_{Si}$) centres in
4H-SiC using laser writing without any post-annealing process. Due to the
aberration correction in the writing apparatus and the non-annealing process,
we generate single $V_{Si}$ centres with yields up to 30%, located within about
80 nm of the desired position in the transverse plane. We also investigated the
photophysics of the laser writing $V_{Si}$ centres and conclude that there are
about 16 photons involved in the laser writing $V_{Si}$ centres process. Our
results represent a powerful tool in fabrication of single $V_{Si}$ centres in
SiC for quantum technologies and provide further insights into laser writing
defects in dielectric materials.
