  Two-dimensional materials offer new opportunities for both fundamental
science and technological applications, by exploiting the electron spin. While
graphene is very promising for spin communication due to its extraordinary
electron mobility, the lack of a band gap restricts its prospects for
semiconducting spin devices such as spin diodes and bipolar spin transistors.
The recent emergence of 2D semiconductors could help overcome this basic
challenge. In this letter we report the first important step towards making 2D
semiconductor spin devices. We have fabricated a spin valve based on ultra-thin
(5 nm) semiconducting black phosphorus (bP), and established fundamental spin
properties of this spin channel material which supports all electrical spin
injection, transport, precession and detection up to room temperature (RT).
Inserting a few layers of boron nitride between the ferromagnetic electrodes
and bP alleviates the notorious conductivity mismatch problem and allows
efficient electrical spin injection into an n-type bP. In the non-local spin
valve geometry we measure Hanle spin precession and observe spin relaxation
times as high as 4 ns, with spin relaxation lengths exceeding 6 um. Our
experimental results are in a very good agreement with first-principles
calculations and demonstrate that Elliott-Yafet spin relaxation mechanism is
dominant. We also demonstrate that spin transport in ultra-thin bP depends
strongly on the charge carrier concentration, and can be manipulated by the
electric field effect.
