  The tailoring of the physical properties of semiconductor nanomaterials by
strain has been gaining increasing attention over the last years for a wide
range of applications such as electronics, optoelectronics and photonics. The
ability to introduce deliberate strain fields with controlled magnitude and in
a reversible manner is essential for fundamental studies of novel materials and
may lead to the realization of advanced multi-functional devices. A prominent
approach consists in the integration of active nanomaterials, in thin epitaxial
films or embedded within carrier nanomembranes, onto
Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical
signals into mechanical deformation (strain). In this review, we mainly focus
on recent advances in strain-tunable properties of self-assembled InAs quantum
dots embedded in semiconductor nanomembranes and photonic structures.
Additionally, recent works on other nanomaterials like rare-earth and metal-ion
doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional
materials are also reviewed. For the sake of completeness, a comprehensive
comparison between different procedures employed throughout the literature to
fabricate such hybrid piezoelectric-semiconductor devices is presented. Very
recently, a novel class of micro-machined piezoelectric actuators have been
demonstrated for a full control of in-plane stress fields in nanomembranes,
which enables producing energy-tunable sources of polarization-entangled
photons in arbitrary quantum dots. Future research directions and prospects are
discussed.
