  We use the theory of the fluctuating electromagnetic field to calculate the
frictional drag between nearby two-and three dimensional electron systems. The
frictional drag results from coupling via a fluctuating electromagnetic field,
and can be considered as the dissipative part of the van der Waals interaction.
In comparison with other similar calculations for semiconductor two-dimensional
system we include retardation effects. We consider the dependence of the
frictional drag force on the temperature $T$, electron density and separation
$d$. We find, that retardation effects become dominating factor for high
electron densities, corresponding thing metallic film, and suggest a new
experiment to test the theory. The relation between friction and heat transfer
is also briefly commented on.
