  B diffusion measurements are used to probe the basic nature of
self-interstitial 'point' defects in Ge. We find two distinct self-interstitial
forms - a simple one with low entropy and a complex one with entropy ~30 k at
the migration saddle point. The latter dominates diffusion at high temperature.
We propose that its structure is similar to that of an amorphous pocket - we
name it a 'morph'. Computational modelling suggests that morphs exist in both
self-interstitial and vacancy-like forms, and are crucial for diffusion and
defect dynamics in Ge, Si and probably many other crystalline solids.
