  Thin aluminum oxide films were deposited by a new and simple physicochemical
method called chemical liquid phase deposition (CLD) on semiconductor
materials. Aluminum sulfate with crystallized water and sodium bicarbonate were
used as precursors for film growth, and the control of the system pH value
played an important role in this experiment. The growth rate is 12 nm/h at room
temperature. Post-growth annealing not only densifies and purifies the films,
but results in film crystallization as well. Excellent quality of Al2O3 films
in this work is supported by electron dispersion spectroscopy, Fourier
transform infrared spectrum, X-ray diffraction spectrum and scanning electron
microscopy photograph.
