  A monolithic silicon pixel detector prototype has been produced in the SiGe
BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of
hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels
were calibrated in laboratory with radioactive sources and tested in a 180
GeV/c pion beamline at the CERN SPS. A detection efficiency of
$\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolution
of $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of
150 $\mu$A and at a sensor bias voltage of 160 V. The ASIC was also
characterized at lower bias voltage and preamplifier current.
