  Utilizing a combination of low-temperature scanning tunneling
microscopy/spectroscopy (STM/STS) and electronic structure calculations, we
characterize the structural and electronic properties of single atomic
vacancies within several monolayers of the surface of black phosphorus. We
illustrate, with experimental analysis and tight-binding calculations, that we
can depth profile these vacancies and assign them to specific sublattices
within the unit cell. Measurements reveal that the single vacancies exhibit
strongly anisotropic and highly delocalized charge density, laterally extended
up to 20 atomic unit cells. The vacancies are then studied with STS, which
reveals in-gap resonance states near the valence band edge and a strong
p-doping of the bulk black phosphorus crystal. Finally, quasiparticle
interference generated near these vacancies enables the direct visualization of
the anisotropic band structure of black phosphorus.
