  Two-dimensional (2D) semiconductors are promising candidates for scaled
transistors because they are immune to mobility degradation at the monolayer
limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is
limited by the contact resistance. In this work, we show for the first time a
statistical study of Au contacts to chemical vapor deposited monolayer MoS2
using transmission line model (TLM) structures, before and after dielectric
encapsulation. We report contact resistance values as low as 330 ohm-um, which
is the lowest value reported to date. We further study the effect of Al2O3
encapsulation on variability in contact resistance and other device metrics.
Finally, we note some deviations in the TLM model for short-channel devices in
the back-gated configuration and discuss possible modifications to improve the
model accuracy.
