  A metal-insulator transition in two-dimensional electron gases at B=0 is
found in Ga(Al)As heterostructures, where a high density of self-assembled InAs
quantum dots is incorporated just 3 nm below the heterointerface. The
transition occurs at resistances around h/e^2 and critical carrier densities of
1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be
rather weak in our samples, while disorder plays a crucial role.
