  We report measurements of radiation transmission in the 0.220--0.325 THz
frequency domain through GaN quantum wells grown on sapphire substrates at room
and low temperatures. A significant enhancement of the transmitted beam
intensity with the applied voltage on the devices under test is found. For a
deeper understanding of the physical phenomena involved, these results are
compared with a phenomenological theory of light transmission under electric
bias relating the transmission enhancement to changes in the differential
mobility of the two-dimensional electron gas.
