  Current quantum systems based on spin qubits are controlled by classical
electronics located outside the cryostat at room temperature. This approach
creates a major wiring bottleneck, which is one of the main roadblocks toward
truly scalable quantum computers. Thus, we propose a scalable memristor-based
programmable DC source that could be used to perform biasing of quantum dots
inside of the cryostat (i.e. in-situ). This novel cryogenic approach would
enable to control the applied voltage on the electrostatic gates by programming
the resistance of the memristors, thus storing in the latter the appropriate
conditions to form the quantum dots. In this study, we first demonstrate
multilevel resistance programming of a TiO2-based memristors at 4.2 K, an
essential feature to achieve voltage tunability of the memristor-based DC
source. We then report hardwarebased simulations of the electrical performance
of the proposed DC source. A cryogenic TiO2-based memristor model fitted on our
experimental data at 4.2 K was used to show a 1 V voltage range and 100 uV
in-situ memristor-based DC source. Finally, we simulate the biasing of double
quantum dots enabling sub-2 minutes in-situ charge stability diagrams. This
demonstration is a first step towards more advanced cryogenic applications for
resistive memories such as cryogenic control electronics for quantum computers.
