  High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful
for topological quantum computing and spintronics applications. In high
mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor.
In this report, we demonstrate that by growing the InGaAs quantum wells as a
digital alloy, or a short period superlattice, we can reduce the alloy disorder
scattering within the quantum well and increase the peak 2 K electron mobility
to 545,000 cm^2/V s, which is the highest reported mobility for high In content
InGaAs quantum wells to the best of the authors' knowledge. Our results
demonstrate that the digital alloy approach can be used to increase the
mobility of quantum wells in random alloy ternary materials.
