  Polycrystalline MgB2 samples with GaN additions were prepared by reaction of
Mg, B, and GaN powders. The presence of Ga leads to a low melting eutectic
phase which allowed liquid phase sintering and produces plate-like grains. For
low-level GaN additions (5% at. % or less), the critical transition
temperature, Tc, remained unchanged and in 1T magnetic field, the critical
current density, Jc was enhanced by a factor of 2 and 10, for temperatures of
\~5K and 20K, respectively. The values obtained are approaching those of hot
isostatically pressed samples.
