  In this paper we consider two different geometry of quasi one-dimensional
semiconductors and calculate their exchange-correlation induced bandgap
renormalization (BGR) as a function of the electron-hole plasma density and
quantum wire width. Based on different fabrication scheme, we define suitable
external confinement potential and then leading-order GW dynamical screening
approximation is used in the calculation by treating electron-electron Coulomb
interaction and electron-optical phonon interaction. Using a numerical scheme,
screened Coulomb potential, probability of different states, profile of charge
density and the values of the renormalized gap energy are calculated and the
effects of variation of confinement potential width and temperature are
studied.
