  Artificial atoms in solids have emerged as leading systems for quantum
information processing tasks such as quantum networking, sensing, and
computing. A central goal is to develop platforms for precise and scalable
control of individually addressable artificial atoms that feature efficient
optical interfaces. Color centers in silicon, such as the recently-isolated
carbon-related 'G-center', exhibit emission directly into the
telecommunications O-band and can leverage the maturity of silicon-on-insulator
(SOI) photonics. Here, we demonstrate the generation, individual addressing,
and spectral trimming of G-center artificial atoms in a SOI photonic integrated
circuit (PIC) platform. Focusing on the neutral charge state emission at
1278nm, we observe waveguide-coupled single photon emission with an
exceptionally narrow inhomogeneous distribution with standard deviation of
1.1nm, an excited state lifetime of 8.3$\pm$0.7ns, and no degradation after
months of operation. In addition, we introduce a technique for optical trimming
of spectral transitions up to 300 pm (55 GHz) and local deactivation of single
artificial atoms. This non-volatile "spectral programming" enables the
alignment of quantum emitters into 25 GHz telecommunication grid channels. Our
demonstration opens the path to quantum information processing based on
implantable artificial atoms in very large scale integrated (VLSI) photonics.
