  Theory of electron-acoustic single phonon scattering has been reconsidered.
It is assumed that the non-degenerate semiconductor has a spherical parabolic
band structure. In the basis of the reconsideration there is a phenomenon of
the tilting of semiconductor bands by the perturbing potential of an electric
field. In this case, electron eigenfunctions are not plane waves or Bloch
functions. In low-field regime, the expressions for electron intraband
transition probability and scattering time are obtained under elastic collision
approximation. Dependencies of scattering time on electron energy and uniform
electric field are analyzed. The results of corresponding numerical
computations for n-Si at 300 K are presented. It is established that there is
no fracture on the curve of electron scattering time dependence on the electron
energy.
