  The low temperature longitudinal resistance-per-square Rxx(T) in ungated
GaAs/AlGaAs quantum wells of high peak hole mobility 1.7x10^6 cm^2/Vs is
metallic for 2D hole density p as low as 3.8x10^9 cm-2. The electronic
contribution to the resistance, R_{el}(T), is a nonmonotonic function of T,
exhibiting thermal activation, R_{el}(T) ~ exp{-E_a/kT}, for kT<<E_F and a
heretofore unnoted decay R_{el}(T) ~ 1/T for k_T>EF. The form of R_{el}(T) is
independent of density, indicating a fundamental relationship between the low
and high T scattering mechanisms in the metallic state.
