  Recent discovery of emergent magnetism in van der Waals magnetic materials
(vdWMM) has broadened the material space for developing spintronic devices for
energy-efficient computation. While there has been appreciable progress in
vdWMM discovery, with strong perpendicular magnetic anisotropy (PMA) and Curie
temperatures exceeding room temperature, a solution for non-volatile,
deterministic switching of vdWMMs at room temperature has been missing,
limiting the prospects of their adoption into commercial spintronic devices.
Here, we report the first demonstration of current-controlled non-volatile,
deterministic magnetization switching in a vdW magnetic material at room
temperature. We have achieved spin-orbit torque (SOT) switching of the PMA vdW
magnet Fe3GaTe2 using a Pt spin-Hall layer up to 320 K, with a threshold
switching current density as low as $J_{sw} = 1.69\times10^6 A/cm^2$ at room
temperature. We have also quantitatively estimated the anti-damping-like SOT
efficiency of our Fe3GaTe2/Pt bilayer system to be $\xi_{DL}$ = 0.093, using
second harmonic Hall voltage measurement technique. These results mark a
crucial step in making vdW magnetic materials a viable choice for the
development of scalable, future spintronic devices.
