  We present a theory of the imprinting of the electron spin coherence and
population in an n-doped semiconductor which forms a junction with a
ferromagnet. The reflection of non-equilibrium semiconductor electrons at the
interface provides a mechanism to manipulate the spin polarization vector. In
the case of unpolarized excitation, this ballistic effect produces spontaneous
electron spin coherence and nuclear polarization in the semiconductor, as
recently observed by time-resolved Faraday rotation experiments. We investigate
the dependence of the spin reflection on the Schottky barrier height and the
doping concentration in the semiconductor and suggest control mechanisms for
possible device applications.
