  We observed qualitatively dissimilar frequency dependence of negative
capacitive response under high charge injection in two sets of junction diodes
which are functionally different from each other i.e. electroluminescent diodes
and non-luminescent Si-based diodes. Using the technique of bias-activated
differential capacitance response, we investigated the mutual dynamics of
different rate processes in different diodes. We explain these observations as
the mutual competition of fast and slow electronic transition rates albeit
differently. This study provides a better understanding of the physics of
junction diodes operating under high charge carrier injection and may lead to
superior device functionalities.
