  It is shown that a new kind of information can be extracted from the Fourier
transform of negative magnetoresistance (MR) in 2D semiconductor structures.
The procedure proposed provides the information on the area distribution
function of the closed paths and on the area dependence of the mean length of
closed paths $\bar{L} (S)$ . Based on this line of attack the method of
analysis of the negative MR is suggested. The method is used for data treatment
of negative MR in 2D structures. In previous version (cond-mat/9902038) we
suppoused that the difference in area dependence of $\bar{L} (S)$ for
structures investigated came from the difference in scattering ansotropy. The
more detailed analysis shows that main reason for such difference is different
relations between momentum and phase relaxation times.
