  We demonstrate a technique to produce thin graphene layers on C-face of SiC
under ultra high vacuum conditions. A stack of two SiC substrates comprising a
half open cavity at the interface is used to partially confine the depleted Si
atoms from the sample surface during the growth. We observe that this
configuration significantly slows the graphene growth to easily controllable
rates on C-face SiC in UHV environment. Results of low-energy electron
diffractometry and Raman spectroscopy measurements on the samples grown with
stacking configuration are compared to those of the samples grown by using bare
UHV sublimation process.
