  In this article, we report the temperature dependence of spin-lattice
relaxation rates at two Pt sites and one Si site in CePt3Si with a
non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and
300 K and 1/T1 of Si above 3 K might be explained by the contributions from the
low-lying crystal-electric-field level and the quasiparticle due to the
hybridization between the ground state and conduction electrons. Just below Tc
no remarkable enhancement in 1/T1 was observed. The estimated value of
superconducting gap is about 2Delta = 3kBTc.
