  We use temperature- and field-dependent resistivity measurements
[Shubnikov--de Haas (SdH) quantum oscillations] and ultrahigh resolution,
tunable, vacuum ultraviolet (VUV) laser-based angle-resolved photoemission
spectroscopy (ARPES) to study the three-dimensionality (3D) of the bulk
electronic structure in WTe2, a type-II Weyl semimetal. The bulk Fermi surface
(FS) consists of two pairs of electron pockets and two pairs of hole pockets
along the X-Gamma-X direction as detected by using an incident photon energy of
6.7 eV, which is consistent with the previously reported data. However, if
using an incident photon energy of 6.36 eV, another pair of tiny electron
pockets is detected on both sides of the Gamma point, which is in agreement
with the small quantum oscillation frequency peak observed in the
magnetoresistance. Therefore, the bulk, 3D FS consists of three pairs of
electron pockets and two pairs of hole pockets in total. With the ability of
fine tuning the incident photon energy, we demonstrate the strong
three-dimensionality of the bulk electronic structure in WTe2. The combination
of resistivity and ARPES measurements reveal the complete, and consistent,
picture of the bulk electronic structure of this material.
