  We describe a new regime for low-field magnetoresistance in organic
semiconductors, in which the spin-relaxing effects of localized nuclear spins
and electronic spins interfere. The regime is studied by the controlled
addition of localized electronic spins to a material that exhibits substantial
room-temperature magnetoresistance ($\sim 20$\%). Although initially the
magnetoresistance is suppressed by the doping, at intermediate doping there is
a regime where the magnetoresistance is insensitive to the doping level. For
much greater doping concentrations the magnetoresistance is fully suppressed.
The behavior is described within a theoretical model describing the effect of
carrier spin dynamics on the current.
