  We investigate, based on the tight-binding model and in the linear
deformation regime, the strain dependence of the electronic band structure of
phosphorene, exposed to a uniaxial strain in one of its principle directions,
the normal, the armchair and the zigzag directions. We show that the electronic
band structure of strained phosphorene, for experimentally accessible carrier
densities and uniaxial strains, is well described by a strain-dependent
decoupled electron-hole Hamiltonian. Then, employing the decoupled Hamiltonian,
we consider the strain dependence of the charged-impurity-limited carrier
mobility in phosphorene, for both types of carrier, arbitrary carrier density
and in both armchair and zigzag directions. We show that a uniaxial tensile
(compressive) strain in the normal direction enhances (weakens) the anisotropy
of the carrier mobility, while a uniaxial strain in the zigzag direction acts
inversely. Moreover applying a uniaxial strain in the armchair direction is
shown to be ineffective on the anisotropy of the carrier mobility. These will
be explained based on the effect of the strain on the carrier effective mass.
