  AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure
sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth,
firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma.
Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For
post-processing interfacial SiOx thickness reduction, three different top metal
electrodes were studied: platinum, aluminum and titanium. For both dielectrics,
it was found that Pt did not react with the films, while Al reacted with them
forming an aluminate-like interface and, finally, Ti was effective in
scavenging the SiO2 interface thickness without severely compromising gate
dielectric leakage.
