  We report the synthesis of AB-stacked multilayer graphene via ambient
pressure chemical vapor deposition on Cu foils, and demonstrate a method to
construct suspended multilayer graphene devices. In four-terminal geometry,
such devices were characterized by hot carrier transport at temperatures down
to 240 mK and in magnetic fields up to 14 T. The differential conductance
(dI/dV) shows a characteristic dip at longitudinal voltage bias V=0 at low
temperatures, indicating the presence of hot electron effect due to a weak
electron-phonon coupling. Under magnetic fields, the magnitude of the dI/dV dip
diminishes through the enhanced intra-Landau level cyclotron phonon scattering.
Our results provide new perspectives in obtaining and understanding AB-stacked
multilayer graphene, important for future graphene-based applications.
