  Quantitative measurements of extended defects in crystalline materials are
important in understanding material behaviour. X-ray line profile analysis
provides a complement to direct counting in the electron microscope, but is an
indirect method and requires validation. Previous studies have focused on
comparing x-ray analysis to electron microscopy results. Instead, we use
simulated defective material with known defect content and apply line profile
analysis to calculated diffraction profiles to directly show that line profile
analysis can reliably quantify dislocations and stacking faults.
