  Antiferromagnets hosting structural or magnetic order that breaks time
reversal symmetry are of increasing interest for 'beyond von Neumann computing'
applications because the topology of their band structure allows for intrinsic
physical properties, exploitable in integrated memory and logic function. One
such group are the non-collinear antiferromagnets. Essential for domain
manipulation is the existence of small net moments found routinely when the
material is synthesised in thin film form and attributed to symmetry-breaking
caused by spin canting, either from the Dzyaloshinskii-Moriya interaction or
from strain. Although the spin arrangement of these materials makes them highly
sensitive to strain, there is little understanding about the influence of local
strain fields caused by lattice defects on global properties, such as
magnetisation and anomalous Hall effect. This premise is investigated by
examining non-collinear films that are either highly lattice mismatched or
closely matched to their substrate. In either case, edge dislocation networks
are generated and for the former case these extend throughout the entire film
thickness, creating large local strain fields. These strain fields allow for
finite intrinsic magnetisation in seemly structurally relaxed films and
influence the antiferromagnetic domain state and the intrinsic anomalous Hall
effect.
