  Two-dimensional (2D) Transition Metal Dichalcogenide semiconductor (TMDs)
nanocircuits are deterministically engineered over large-scale substrates. The
original approach combines large-area physical growth of 2D TMDs layer with
high resolution thermal - Scanning Probe Lithography (t-SPL), to reshape the
ultra-thin semiconducting layers at the nanoscale level. We demonstrate the
additive nanofabrication of few-layer MoS2 nanostructures, grown in the
2H-semiconducting TMD phase, as shown by their Raman vibrational fingerprints
and by their optoelectronic response. The electronic signatures of the MoS2
nanostructures are locally identified by Kelvin probe force microscopy
providing chemical and compositional contrast at the nanometer scale. Finally,
the potential role of the 2D TMD nanocircuits as building blocks of
deterministic 2D semiconducting interconnections is demonstrated by
high-resolution local conductivity maps showing the competitive transport
properties of these large-area nanolayers. This work thus provides a powerful
approach to scalable nanofabrication of 2D nano-interconnects and van der Waals
heterostructures, and to their integration in real-world ultra-compact
electronic and photonic nanodevices.
