  The crystal structure of solid-state matter greatly affects its electronic
properties. For example in multilayer graphene, precise knowledge of the
lateral layer arrangement is crucial, since the most stable configurations,
Bernal and rhombohedral stacking, exhibit very different electronic properties.
Nevertheless, both stacking orders can coexist within one flake, separated by a
strain soliton that can host topologically protected states. Clearly, accessing
the transport properties of the two stackings and the soliton is of high
interest. However, the stacking orders can transform into one another and
therefore, the seemingly trivial question how reliable electrical contact can
be made to either stacking order can a priori not be answered easily. Here, we
show that manufacturing metal contacts to multilayer graphene can move solitons
by several $\mu$m, unidirectionally enlarging Bernal domains due to arising
mechanical strain. Furthermore, we also find that during dry transfer of
multilayer graphene onto hexagonal Boron Nitride, such a transformation can
happen. Using density functional theory modeling, we corroborate that
anisotropic deformations of the multilayer graphene lattice decrease the
rhombohedral stacking stability. Finally, we have devised systematics to avoid
soliton movement, and how to reliably realize contacts to both stacking
configurations.
