  High level of dissipation in normal metals makes challenging development of
active and passive plasmonic devices. One possible solution to this problem is
to use alternative materials. Graphene is a good candidate for plasmonics in
near infrared (IR) region. In this paper we develop quantum theory of a
graphene plasmon generator. We account for the first time quantum correlations
and dissipation effects that allows describing such regimes of quantum
plasmonic amplifier as surface plasmon emitting diode and surface plasmon
amplifier by stimulated emission of radiation. Switching between these
generation types is possible in situ with variance of graphene Fermi-level or
gain transition frequency. We provide explicit expressions for dissipation and
interaction constants through material parameters and find the generation
spectrum and correlation function of second order which predicts laser
statistics.
