  We calculate the distribution of the conductance G in a one-dimensional
disordered wire at finite temperature T and bias voltage V in a
independent-electron picture and assuming full coherent transport. At high
enough temperature and bias voltage, where several resonances of the system
contribute to the conductance, the distribution P(G(T,V)) can be represented
with good accuracy by autoconvolutions of the distribution of the conductance
at zero temperature and zero bias voltage. The number of convolutions depends
on T and V. In the regime of very low T and V, where only one resonance is
relevant to G(T,V), the conductance distribution is analyzed by a resonant
tunneling conductance model. Strong effects of finite T and V on the
conductance distribution are observed and well described by our theoretical
analysis, as we verify by performing a number of numerical simulations of a
one-dimensional disordered wire at different temperatures, voltages, and
lengths of the wire. Analytical estimates for the first moments of P(G(T,V)) at
high temperature and bias voltage are also provided.
