  We assess the potential of two-terminal graphene-hBN-graphene resonant
tunneling diodes as high-frequency oscillators, using self-consistent quantum
transport and electrostatic simulations to determine the time-dependent
response of the diodes in a resonant circuit. We quantify how the frequency and
power of the current oscillations depend on the diode and circuit parameters
including the doping of the graphene electrodes, device geometry, alignment of
the graphene lattices, and the circuit impedances. Our results indicate that
current oscillations with frequencies of up to several hundred GHz should be
achievable.
