  Ab initio electronic structure studies of prototypical polar interfaces of
wurtzite III-V nitrides show that large uniform electric fields exist in
epitaxial nitride overlayers, due to the discontinuity across the interface of
the macroscopic polarization of the constituent materials. Polarization fields
forbid a standard evaluation of band offsets and formation energies: using new
techniques, we find a large forward-backward asymmetry of the offset (0.2 eV
for AlN/GaN (0001), 0.85 eV for GaN/AlN (0001)), and tiny interface formation
energies.
