  In this work, we study the performance of different decoding schemes for
multilevel flash memories where each page in every block is encoded
independently. We focus on the multi-level cell (MLC) flash memory, which is
modeled as a two-user multiple access channel suffering from asymmetric noise.
The uniform rate regions and sum rates of Treating Interference as Noise (TIN)
decoding and Successive Cancelation (SC) decoding are investigated for a
Program/Erase (P/E) cycling model and a data retention model. We examine the
effect of different binary labelings of the cell levels, as well as the impact
of further quantization of the memory output (i.e., additional read
thresholds). Finally, we extend our analysis to the three-level cell (TLC)
flash memory.
