  Recently, van der Waals (vdW) magnetic heterostructures have received
increasing research attention in spintronics. However, the lack of
room-temperature magnetic order of vdW material has largely impedes its
development in practical spintronics devices. Inspired by the recently
discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic
order above room temperature and sizable perpendicular magnetic anisotropy, we
investigate the basic electronic structure and magnetic properties of Fe3GaTe2
as well as tunneling magnetoresistance effect in magnetic tunnel junctions
(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principles
calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi
surface ensures that such magnetic tunnel junctions may have prominent
tunneling magnetoresistance effect at room temperature even comparable to
existing conventional AlOx and MgO-based MTJs. Our results suggest that
Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting
full magnetic vdW spintronic devices.
