  Ion implantation of Mn ions into hole-doped GaP has been used to induce
ferromagnetic behavior above room temperature for optimized Mn concentrations
near 3 at.%. The magnetism is suppressed when the Mn dose is increased or
decreased away from the 3 at.% value, or when n-type GaP substrates are used.
At low temperatures the saturated moment is on the order of one Bohr magneton,
and the spin wave stiffness inferred from the Bloch-law T^3/2 dependence of the
magnetization provides an estimate Tc = 385K of the Curie temperature that
exceeds the experimental value, Tc = 270K. The presence of ferromagnetic
clusters and hysteresis to temperatures of at least 330K is attributed to
disorder and proximity to a metal-insulating transition.
