  To engineer strain relaxation of sputtered BST thin films on Pt-Si wafers,
homo-buffer layer method was applied to eliminate Pt hillock formation. Thin
BST homo-buffer layers were deposited at room temperature and subsequently the
main BST layer was deposited at 650{\deg}C, Pt hillock free BST films were
obtained with homo-buffer thickness above 5 nm. Relatively good electrical
properties were obtained for BST thin films with 15 and 25 nm homo-buffer layer
(T= 30 % at 5V and tan {\delta}= 0.018).
