  Thin GaMnAs layers grown by molecular beam epitaxy were subjected to
low-temperature post growth annealing, with an amorphous arsenic capping layer
deposited on the GaMnAs surface directly after the epitaxial growth. It is
shown that the presence of arsenic capping at the GaMnAs surface significantly
shortens the post-growth annealing times and facilitates a complete
out-diffusion of Mn interstitials from GaMnAs volume.
