  The statistical properties of the conductance of one dimensional disordered
systems are studied at finite bias voltage V and temperature T, in an
independent-electron picture. We calculate the complete distribution of the
conductance P(G) in different regimes of V, T within a statistical model of
resonant tunneling transmission. We find that P(G) changes from the well-known
log-normal distribution at T=0 in the linear response regime to a Gaussian
distribution at large V, T. The dependence on T and V of average quantities
such as < G >, < ln G > is analyzed as well. Our analytical results are
confirmed by numerical simulations. We also discuss the limits of validity of
the model and conclude that the effects of finite T, V presented here should be
observable.
