  In recent years systematic experimental studies of the temperature dependence
of the resistivity in a variety of dilute, ultra clean two dimensional
electron/hole systems have revived the fundamental question of localization or,
alternatively, the existence of a metal-insulator transition in the presence of
strong electron-electron interactions in two dimensions. We argue that under
the extreme conditions of ultra clean systems not only is the electron-electron
interaction very strong but the role of other system specific properties are
also enhanced. In particular, we emphasize the role of valleys in determining
the transport properties of the dilute electron gas in silicon inversion layers
(Si-MOSFETs). It is shown that for a high quality sample the temperature
behavior of the resistivity in the region close to the critical region of the
metal-insulator transition is well described by a renormalization group
analysis of the interplay of interaction and disorder if the electron band is
assumed to have two distinct valleys. The decrease in the resistivity up to
five times has been captured in the correct temperature interval by this
analysis, without involving any adjustable parameters. The considerable
variance in the data obtained from different Si-MOSFET samples is attributed to
the sample dependent scattering rate across the two valleys, presenting thereby
with a possible explanation for the absence of universal behavior in Si-MOSFET
samples of different quality.
