  This work presents a systematic study of stress and strain of AlxGa1-xN/AlN
with composition ranging from GaN to AlN, grown on a c-plane sapphire by
metal-organic chemical vapor deposition, using synchrotron radiation
high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of
the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane
exhibits tensile strain. The biaxial stress and strain are found to increase
with increasing Al composition, although the lattice mismatch between the
AlxGa1-xN and the buffer layer AlN gets smaller. A reduction in the lateral
coherence lengths and an increase in the edge and screw dislocations are seen
as the AlxGa1-xN composition is varied from GaN to AlN, exhibiting a clear
dependence of the crystal properties of AlxGa1-xN on the Al content. The
bandgap of the epitaxial layers is slightly lower than predicted value due to a
larger tensile strain effect on the a-axis compared to the compressive strain
on the c-axis. Raman characteristics of the AlxGa1-xN samples exhibit a shift
in the phonon peaks with the Al composition. The effect of strain is also
discussed on the optical phonon energies of the epitaxial layers. The
techniques discussed here can be used to study other similar materials.
