  The recent development of the superlattice nanowire pattern transfer (SNAP)
technique allows for the fabrication of arrays of nanowires at a diameter,
pitch, aspect ratio, and regularity beyond competing approaches. Here, we
report the fabrication of conducting Si nanowire arrays with wire widths and
pitches of 10-20 nm and 40-50 nm, respectively, and resistivity values
comparable to the bulk through the selection of appropriate
silicon-on-insulator substrates, careful reactive-ion etching, and spin-on
glass doping. These results promise the realization of interesting
nano-electronic circuits and devices, including chemical and biological
sensors, nano-scale mosaics for molecular electronics, and ultra-dense
field-effect transistor (FET) arrays.
