  We investigate low-temperature transport through single InAs quantum wells
and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the
regime beyond bulk pinch-off confirm the presence of edge conduction in InAs
quantum wells. The edge resistivity of 1-2 $\mathrm{k\Omega/\mu m}$ is of the
same order of magnitude as edge resistivities measured in the InAs/GaSb double
quantum well system. Measurements in tilted magnetic field suggests an
anisotropy of the conducting regions at the edges with a larger extent in the
plane of the sample than normal to it. Finger gate samples on both material
systems shine light on the length dependence of the edge resistance with the
intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum
wells.
