  Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in
the field of nanoelectronics, since their properties, solely defined by their
width and edge type, are controllable with high precision directly from
synthesis. Here we study the correlation between the GNR structure and the
corresponding device electrical properties. We investigated a series of field
effect devices consisting of a film of armchair GNRs with different structures
(namely width and/or length) as the transistor channel, contacted with narrowly
spaced graphene sheets as the source-drain electrodes. By analyzing several
tens of junctions for each individual GNR type, we observe that the values of
the output current display a width-dependent behavior, indicating electronic
bandgaps in good agreement with the predicted theoretical values. These results
provide insights into the link between the ribbon structure and the device
properties, which are fundamental for the development of GNR-based electronics.
