  The memristive device is one of the basic elements of novel, brain-inspired,
fast, and energy-efficient information processing systems in which there is no
separation between memorization and information analysis functions. Since the
first demonstration of the resistive switching effect, several types of
memristive devices have been developed. In most of them, the memristive effect
originates from direct modification of the conducting area, e.g. conducting
filament formation/disintegration, or semiconductor doping/dedoping. Here, we
report a solution-processed lateral memristive device based on a new
conductivity modulation mechanism. The device architecture resembles that of an
organic field-effect transistor in which the top gate electrode is replaced
with an additional insulator layer containing mobile ions. Alteration of the
ion distribution under the influence of applied potential changes the electric
field, modifying the conductivity of the semiconductor channel. The devices
exhibit highly stable current-voltage hysteresis loops and Short-Term
Plasticity (STP). We also demonstrate short-term synaptic plasticity with
tunable time constants.
