  We put forward a mechanism for current induced spin polarization for a hole
in a quantum dot side-coupled to a quantum wire, that is based on the
spin-orbit splitting of the valence band. We predict that in a stark contrast
with the traditional mechanisms based on the linear in momentum spin-orbit
coupling, an exponentially small bias applied to the quantum wire with heavy
holes is enough to create the 100% spin polarization of a localized light hole.
Microscopically, the effect is related with the formation of chiral quasi bound
states and the spin dependent tunneling of holes from the quantum wire to the
quantum dot. This novel current induced spin polarization mechanism is equally
relevant for the GaAs, Si and Ge based semiconductor nanostructures.
