  For the first time, n-type few-layer MoS2 field-effect transistors with
graphene/Ti as the hetero-contacts have been fabricated, showing more than 160
mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of
107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times
improvement in on-resistance and a 3.3 times improvement in contact resistance
with hetero-contacts compared to the MoS2 FETs without graphene contact layer.
Temperature dependent study on MoS2/graphene hetero-contacts has been also
performed, still unveiling its Schottky contact nature. Transfer length method
and a devised I-V method have been introduced to study the contact resistance
and Schottky barrier height in MoS2/graphene /metal hetero-contacts structure.
