  While the promise of clean and defect-free $\textrm{MoS}_{2}$ nanotubes as
quantum electronic devices is obvious, ranging from strong spin-orbit
interaction to intrinsic superconductivity, device fabrication still poses
considerable challenges. Deterministic transfer of transition metal
dichalcogenide nanomaterials and transparent contacts to the nanomaterials are
nowadays highly active topics of research, both with fundamental research and
applications in mind. Contamination from transport agents as well as surface
adsorbates and surface charges play a critical role for device performance.
Many techniques have been proposed to address these topics for transition metal
dichalcogenides in general. Here, we analyse their usage for the transfer based
fabrication of $\textrm{MoS}_{2}$ nanotube devices. Further, we compare
different contact materials in order to avoid the formation of a Schottky
barrier.
