  High electric-field transport parameters are calculated using an analytical
Fokker-Planck approach (FPA), where transport is modeled as a drift-diffusion
process in energy space. We have applied the theory to the case of Si, taking
into account the six intervalley phonons, aiming to test the FPA. The obtained
results show a quite reasonable agreement with experimental data and Monte
Carlo simulations confirming in this case that the FPA works very well for high
enough electric fields.
