  We study the effect of electron-electron interactions on the
resonant-tunneling spectroscopy of the localized states in a barrier. Using a
simple model of three localized states, we show that, due to the Coulomb
interactions, a single state can give rise to two resonant peaks in the
conductance as a function of gate voltage, G(Vg). We also demonstrate that an
additional higher-order resonance with Vg-position in between these two peaks
becomes possibile when interactions are taken into account. The corresponding
resonant-tunneling process involves two-electron transitions. We have observed
both these effects in GaAs transistor microstructures by studying the time
evolution of three adjacent G(Vg) peaks caused by fluctuating occupation of an
isolated impurity (modulator). The heights of the two stronger peaks exibit
in-phase fluctuations. The phase of fluctuations of the smaller middle peak is
opposite. The two stronger peaks have their origin in the same localized state,
and the third one corresponds to a co-tunneling process.
