  We numerically study the thermoelectric and thermal transport in trilayer
graphene with different stacking orders in the presence of interlayer bias
under a strong perpendicular magnetic field. In biased ABA-stacked case, we
find that the thermoelectric conductivity displays different asymptotic
behaviors with the varying of the temperature, similar to that of monolayer
graphene. In the high temperature regime, the transverse thermoelectric
conductivity $\alpha_{xy}$ saturates to a universal value $2.77 k_B e/h$ at the
center of each LL, while it displays a linear temperature dependence at low
temperatures limit. The calculated transverse thermal conductivity
$\kappa_{xy}$ exhibits two plateaus away from the band center. The transition
between the two plateaus is continuous, which is accompanied by a pronounced
peak in the longitudinal thermal conductivity $\kappa_{xx}$. In biased
ABC-stacked case, it is found that both the thermoelectric conductivity and
thermal conductivity have similar properties to the biased bilayer graphene,
which is consistent with the behavior of a band insulator. The obtained results
demonstrate the sensitivity of the thermoelectric conductivity to the band gap
near the Dirac point. We also verify the validity of the Mott-relation and the
generalized Wiedemann-Franz law.
