  Electrically driven single-photon emitting devices have immediate
applications in quantum cryptography, quantum computation and single-photon
metrology. Mature device fabrication protocols and the recent observations of
single defect systems with quantum functionalities make silicon carbide (SiC)
an ideal material to build such devices. Here, we demonstrate the fabrication
of bright single photon emitting diodes. The electrically driven emitters
display fully polarized output, superior photon statistics (with a count rate
of $>$300 kHz), and stability in both continuous and pulsed modes, all at room
temperature. The atomic origin of the single photon source is proposed. These
results provide a foundation for the large scale integration of single photon
sources into a broad range of applications, such as quantum cryptography or
linear optics quantum computing.
