  Polarization arising from non-centrosymmetric wurtzite lattice underpins the
physics and functionality of gallium nitride (GaN)-the most produced
semiconductor materials second only to silicon. However, recent direct
experimental measurements unveiled remanent polarization of unexpectedly large
magnitudes and opposite orientations to traditionally anticipated. This
significant discrepancy not only poses a formidable challenge to our existing
theoretical paradigms but also accentuates the need for a critical rethinking
and methodological refinement to integrate these novel observations with
established knowledge, mitigating potential misunderstandings and
misconceptions in this rapidly evolving field.
