  We report on the combination of current-induced spin-orbit torques and giant
magnetoresistance in a single device to achieve all-electrical write and read
out of the magnetization. The device consists of perpendicularly magnetized
TbCo and Co layers separated by a Pt or Cu spacer. Current injection through
such layers exerts spin-orbit torques and switches the magnetization of the Co
layer while the TbCo magnetization remains fixed. Subsequent current injection
of lower amplitude senses the relative orientation of the magnetization of the
Co and TbCo layers, which results in two distinct resistance levels for
parallel and antiparallel alignment due to the current-in-plane giant
magnetoresistance effect. We further show that the giant magnetoresistance of
devices including a single TbCo/spacer/Co trilayer can be improved from 0.02%
to 6% by using a Cu spacer instead of Pt. This type of devices offers an
alternative route to a two terminal spintronic memory that can be fabricated
with moderate effort.
