  Electronic structure of single crystalline
Ba(Zn$_{0.875}$Mn$_{0.125}$)$_{2}$As$_{2}$, parent compound of the recently
founded high-temperature ferromagnetic semiconductor, was studied by
high-resolution photoemission spectroscopy (ARPES). Through systematically
photon energy and polarization dependent measurements, the energy bands along
the out-of-plane and in-plane directions were experimentally determined. Except
the localized states of Mn, the measured band dispersions agree very well with
the first-principle calculations of undoped BaZn$_{2}$As$_{2}$. A new feature
related to Mn 3d states was identified at the binding energies of about -1.6 eV
besides the previously observed feature at about -3.3 eV. We suggest that the
hybridization between Mn and As orbitals strongly enhanced the density of
states around -1.6 eV. Although our resolution is much better compared with
previous soft X-ray photoemission experiments, no clear hybridization gap
between Mn 3d states and the valence bands proposed by previous model
calculations was detected.
