  Few-layer PtSe2 films are promising candidates for applications in high-speed
electronics, spintronics and photodetectors. Reproducible fabrication of
large-area highly crystalline films is, however, still a challenge. Here, we
report the fabrication of epitaxially aligned PtSe2 films using one-zone
selenization of pre-sputtered platinum layers. We have studied the influence of
the growth conditions on the structural and electrical properties of the films
prepared from Pt layers with different initial thickness. The best results were
obtained for PtSe2 layers grown at elevated temperatures (600 {\deg}C). The
films exhibit signatures for a long-range in-plane ordering resembling an
epitaxial growth. Charge carrier mobility determined by Hall-effect
measurements is up to 24 cm2/V.s in these films.
