  The CV measurements and tunneling spectroscopy are used to study the
ballistic transport of the spin-polarized holes by varying the value of the
Rashba spin-orbit interaction (SOI) in the p-type quantum well prepared on the
surface of the n-CdF2<Y> bulk crystal. The findings of the hole conductance
oscillations in the plane of the p-type quantum well that are due to the
variations of the Rashba SOI are shown to be evidence of the spin transistor
effect, with the amplitude of the oscillations close to e2/h.
