  Black phosphorus (BP) has recently attracted significant interest due to its
unique electronic and optical properties. Doping is an effective strategy to
tune a material's electronic structures, however, the direct and controllable
growth of BP with a high yield and its doping remain a great challenge. Here we
report an efficient short-distance transport (SDT) growth approach and achieve
the controlled growth of high quality BP with the highest yield so far, where
98% of the red phosphorus is converted to BP. The doping of BP by As, Sb, Bi,
Se and Te are also achieved by this SDT growth approach. Spectroscopic results
show that doping systematically changes its electronic structures including
band gap, work function, and energy band position. As a result, we have found
that the air-stability of doped BP samples (Sb and Te-doped BP) improves
compared with pristine BP, due to the downshift of the conduction band minimum
with doping. This work develops a new method to grow BP and doped BP with
tunable electronic structures and improved stability, and should extend the
uses of these class of materials in various areas.
