  Two dimensional materials are an emerging class of materials which is
transforming the present day research activity on a phenomenal scale. Hexagonal
boron nitride is a wide band gap 2D material which is an excellent substrate
for graphene based electronics. To achieve the full potential of hBN scalable
and high yield growth procedures are required. Here, we demonstrate the
synthesis of hBN by reactive R.F magnetron sputtering over copper foil. Copper
foil preparation conditions determines the phase selectivity of BN films.
Deposition of hBN on non-electropolished Cu foils with predominant (100)
orientation resulted in growth of BN islands with mixed cubic and hexagonal BN
phase. On electropolished Cu foils with high symmetry hexagonal (111) surface
termination we get growth of continuous hexagonal BN films, while on Cu foils
having (100) and (110) orientation with lower symmetry growth of cubic BN films
are observed.
