  Domain-Wall Memory (DWM) structures typically bundle nanowires shifted
together for parallel access. Ironically, this organization does not allow the
natural shifting of DWM to realize \textit{logical shifting} within data
elements. We describe a novel 2-D DWM cross-point (X-Cell) that allows two
individual nanowires placed orthogonally to share the X-Cell. Each nanowire can
operate independently while sharing the value at the X-Cell. Using X-Cells, we
propose an orthogonal nanowire in the Y dimension overlaid on a bundle of X
dimension nanowires for a cross-DWM or XDWM. We demonstrate that the bundle
shifts correctly in the X-Direction, and that data can be logically shifted in
the Y-direction providing novel data movement and supporting
processing-in-memory. We conducted studies on the requirements for physical
cell dimensions and shift currents for XDWM. Due to the non-standard domain,
our micro-magnetic studies demonstrate that XDWM introduces a shift current
penalty of 6.25% while shifting happens in one nanowire compared to a standard
nanowire. We also demonstrate correct shifting using nanowire bundles in both
the X- and Y- dimensions. Using magnetic simulation to derive the values for
SPICE simulation we show the maximum leakage current between nanowires when
shifting the bundle together is $\le3$% indicating that sneak paths are not
problematic for XDWM.
