  We report a room temperature tunneling anisotropic magnetoresistance in
Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to
forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is
observed when the layer magnetizations are rotated collinearly in the junction
plane by an applied external field. The angular dependence of the tunneling
anisotropic magnetoresistance could be explained by the presence of an
antiferromagnetic oxide layer formed within the barrier.
