  The theory of nucleation of nanoscale structures of the adsorbed atoms
(adatoms), which occurs as a result of the self-consistent interaction of
adatoms with the surface acoustic wave and electronic subsystem is developed.
Temperature regimes of formation of nanoclusters on ${n}$-GaAs surface under
the action of laser irradiation are investigated. The offered model permits to
choose optimal technological parameters (temperature, doping degree, intensity
of laser irradiation) for the formation of the surface periodic
defect-deformation structures under the action of laser irradiation.
