  Nanotechnology's impact on semiconductor industry advancement, particularly
through the engineering of nanostructures like nanowires, opens new
possibilities for material functionality due to the tunable physical properties
of nanostructures compared to bulk materials. This paper presents a
comprehensive study on group IV semiconductors and their binaries across four
polytypes: 2H, 3C, 4H, and 6H, focusing on their optoelectronic application
potential. Deep understanding of these polytypes is particularly relevant for
nanowire-based technologies. Through first principles modeling, we examine the
structural and electronic properties of these materials, emphasizing their band
structure, stability, and the feasibility for light-emitting applications. We
use a generalized Ising model to discuss materials stability and tendency for
polytypism. We also determine relative band edge positions and employ a six
$k\cdot p$ model for a detailed understanding of the materials' electronic
properties. Due to the comprehensive nature of this study, we provide insight
on the chemical trends present in all of the studied properties. Our
theoretical predictions align well with existing experimental data, suggesting
new avenues for nanostructure-based device development. The discussion extends
to the implications of these findings for the fabrication of optoelectronic
devices with the studied IV-IV materials, highlighting the challenges and
opportunities for future research in nanowire synthesis and their application.
