  In presented work, a reactive high-power impulse magnetron sputtering
(r-HiPIMS) was used for high-rate deposition ( 170 nm/min) of Cu2O films. Films
were deposited on a standard soda-lime glass (SLG) substrate at a temperature
of 190C. As-deposited films exhibit poor hole mobility in the orders of 1
cm2/Vs. We have systematically studied the effect of laser thermal annealing
(LTA) procedure performed using high-power infrared laser under different laser
parameters (number of pulses, length of the pulse). We have found, LTA
procedure could significantly enhance the hole mobility (up to 24 cm2/Vs in our
case). We have also fitted the results of a temperature-dependent Hall
measurement to clarify the mechanism of the reported increase in hole mobility.
Moreover, we have discussed the effect of the LTA procedure on microstructure
(crystallinity, surface morphology) and on the value of optical band gap.
