  Recent scanning tunneling microscope (STM) measurements discovered remarkable
electronic inhomogeneity, i.e. nano-scale spatial variations of the local
density of states (LDOS) and the superconducting energy gap, in the high-Tc
superconductor BSCCO. Based on the experimental findings we conjectured that
the inhomogeneity arises from variations in local oxygen doping level and may
be generic of doped Mott insulators which behave rather unconventionally in
screening the dopant ionic potentials at atomic scales comparable to the short
coherence length. Here, we provide theoretical support for this picture. We
study a doped Mott insulator within a generalized t-J model, where doping is
accompanied by ionic Coulomb potentials centered in the BiO plane. We calculate
the LDOS spectrum, the integrated LDOS, and the local superconducting gap, make
detailed comparisons to experiments, and find remarkable agreement with the
experimental data. We emphasize the unconventional screening in a doped Mott
insulator and show that nonlinear screening dominates at nano-meter scales
which is the origin of the electronic inhomogeneity. It leads to strong
inhomogeneous redistribution of the local hole density and promotes the notion
of a local doping concentration. We find that the inhomogeneity structure
manifests itself at all energy scales in the STM tunneling differential
conductance, and elucidate the similarity and the differences between the data
obtained in the constant tunneling current mode and the same data normalized to
reflect constant tip-to-sample distance. We also discuss the underdoped case
where nonlinear screening of the ionic potential turns the spatial electronic
structure into a percolative mixture of patches with smaller pairing gaps
embedded in a background with larger gaps to single particle excitations.
