  The transport characteristics of a disordered MoS$_2$ nanoflake in the
insulator regime are studied by electrical and magnetotransport measurements.
The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the
conductance $G$ and magnetoresistance are measured in a four-probe setup over a
wide range of temperatures. At high temperatures, we observe that $\log_{10}G$
exhibits a $-T^{-1}$ temperature dependence and the transport in the nanoflake
dominantly arises from thermal activation. At low temperatures, where the
transport in the nanoflake dominantly takes place via variable-range hopping
(VRH) processes, we observe that $\log_{10}G$ exhibits a $-T^{-1/3}$
temperature dependence, an evidence for the two-dimensional (2D) Mott VRH
transport. The measured low-field magnetoresistance of the nanoflake in the
insulator regime exhibits a quadratic magnetic field dependence $\sim \alpha
B^2$ with $\alpha\sim T^{-1}$, fully consistent with the 2D Mott VRH transport
in the nanoflake.
