  The molecular dynamics method is applied to simulate the recrystallization of
an amorphous/crystalline silicon interface. The atomic structure of the
amorphous material is constructed with the method of Wooten, Winer, and Weaire.
The amorphous on crystalline stack is annealed afterward on a wide range of
temperature and time using five different interatomic potentials:
Stillinger-Weber, Tersoff, EDIP, SW115, and Lenosky. The simulations are
exploited to systematically extract the recrystallization velocity. A strong
dependency of the results on the interatomic potential is evidenced and
explained by the capability of some potentials (Tersoff and SW115) to correctly
handle the amorphous structure, while other potentials (Stillinger-Weber, EDIP,
and Lenosky) lead to the melting of the amorphous. Consequently, the
interatomic potentials are classified according to their ability to simulate
the solid or the liquid phase epitaxy.
