  Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its
intrinsic radiation hardness and is primarily utilized in solar cells as well
as for particle detection and dosimetry. Planar p-i-n diode detectors are
fabricated entirely by means of intrinsic and doped PECVD of a mixture of
Silane (SiH4) and molecular Hydrogen. In order to develop 3D detector
geometries using a-Si:H, two options for the junction fabrication have been
considered: ion implantation and charge selective contacts through atomic layer
deposition. In order to test the functionality of the charge selective contact
electrodes, planar detectors have been fabricated utilizing this technique. In
this paper, we provide a general overview of the 3D fabrication project
followed by the results of leakage current measurements and x-ray dosimetric
tests performed on planar diodes containing charge selective contacts to
investigate the feasibility of the charge selective contact methodology for
integration with the proposed 3D detector architectures.
