  We report on the field-effect modulation of the charge-density-wave quantum
condensate in the top-gated heterostructure devices implemented with
quasi-one-dimensional NbS$_3$ nanowire channels and quasi-two-dimensional h-BN
gate dielectric layers. The charge-density-wave phases and collective current
in quasi-1D NbS$_3$ nanowires were verified via temperature dependence of the
resistivity, non-linear current-voltage characteristics, and Shapiro steps that
appeared in the device response under radio frequency excitation mixed with the
DC bias. It was demonstrated that the electric field of the applied gate bias
can reversibly modulate the collective current of the sliding
charge-density-wave condensate. The collective current reduces with more
positive bias suggesting a surface effect on the condensate mobility. The
single particle current, at small source-drain biases, shows small amplitude
fluctuation behavior, attributed to the variations in the background potential
due to the pinned or creeping charge-density-wave condensate. The knowledge of
the electric-field effect on the charge density waves in quasi-1D NbS$_3$
nanowires is useful for potential electronic applications of such quantum
materials.
