  We consider quantum interference effects in carrier and photocurrent
excitation in graphene using coherent electromagnetic field components at
frequencies $\omega$ and $2\omega$. The response of the material at the
fundamental frequency $\omega$ is presented, and it is shown that one-photon
absorption at $\omega$ interferes with stimulated electronic Raman scattering
(combined $2\omega$ absorption and $\omega$ emission) to result in a net
contribution to the current injection. This interference occurs with a net
energy absorption of $\hbar\omega$ and exists in addition to the previously
studied interference occurring with a net energy absorption of $2\hbar\omega$
under the same irradiation conditions. Due to the absence of a bandgap and the
possibility to block photon absorption by tuning the Fermi level, graphene is
the perfect material to study this contribution. We calculate the polarization
dependence of this all-optical effect for intrinsic graphene and show that the
combined response of the material at both $\omega$ and $2\omega$ leads to an
anisotropic photocurrent injection, whereas the magnitude of the injection
current in doped graphene, when transitions at $\omega$ are Pauli blocked, is
isotropic. By considering the contribution to coherent current control from
stimulated electronic Raman scattering, we find that graphene offers tunable,
polarization sensitive applications. Coherent control due to the interference
of stimulated electronic Raman scattering and linear absorption is relevant not
only for graphene but also for narrow-gap semiconductors, topological
insulators, and metals.
