  Graphene-oxide hybrid structures offer the opportunity to combine the
versatile functionalities of oxides with the excellent electronic transport in
graphene. Understanding and controlling how the dielectric environment affects
the intrinsic properties of graphene is also critical to fundamental studies
and technological development of graphene. Here we review our recent effort on
understanding the transport properties of graphene interfaced with
ferroelectric Pb(Zr,Ti)O_3 (PZT) and high-k HfO_2. Graphene field effect
devices prepared on high-quality single crystal PZT substrates exhibit up to
tenfold increases in mobility compared to SiO_2-gated devices. An unusual and
robust resistance hysteresis is observed in these samples, which is attributed
to the complex surface chemistry of the ferroelectric. Surface polar optical
phonons of oxides in graphene transistors play an important role in the device
performance. We review their effects on mobility and the high source-drain bias
saturation current of graphene, which are crucial for developing graphene-based
room temperature high-speed amplifiers. Oxides also introduce scattering
sources that limit the low temperature electron mobility in graphene. We
present a comprehensive study of the transport and quantum scattering times to
differentiate various scattering scenarios and quantitatively evaluate the
density and distribution of charged impurities and the effect of dielectric
screening. Our results can facilitate the design of multifunctional
nano-devices utilizing graphene-oxide hybrid structures.
