  We develop quantum dots in a single layered MOS structure using an undoped
Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are
accumulated in the Si channel. Clear Coulomb diamond and double dot charge
stability diagrams are measured. The temporal fluctuation of the current is
traced, to which we apply the Fourier transform analysis. The power spectrum of
the noise signal is inversely proportional to the frequency, and is different
from the inversely quadratic behavior known for quantum dots made in doped
wafers. Our results indicate that the source of charge noise for the doped
wafers is related to the 2DEG dopant.
