  We present molecular-dynamic simulations of memory resistors (memristors)
including the crystal field effects on mobile ionic species such as oxygen
vacancies appearing during operation of the device. Vacancy distributions show
different patterns depending on the ratio of a spatial period of the crystal
field to a characteristic radius of the vacancy-vacancy interaction. There are
signatures of the orientational order and of spatial voids in the vacancy
distributions for some crystal field potentials. The crystal field stabilizes
the patterns after they are formed, resulting in a non-volatile switching of
the simulated devices.
