  A backside-illuminated (BSI) near-infrared enhanced silicon single-photon
avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging
applications is presented. The detector contains a 2 $\mu$m wide multiplication
region with a spherically-uniform electric field peak enforced by field-line
crowding. A charge-focusing electric field extends into a 10 $\mu$m deep
absorption volume, whereby electrons generated in all corners of the device can
move efficiently towards the multiplication region. The SPAD is integrated with
a customized 130 nm CMOS technology and a dedicated BSI process. The device has
a pitch of 15 $\mu$m, which has the potential to be scaled down without
significant performance loss. Furthermore, the detector achieves a photon
detection efficiency of 27% at 905 nm, with an excess bias of 3.5 V that is
controlled by integrated CMOS electronics, and a timing resolution of 240 ps.
By virtue of these features, the device architecture is well-suited for large
format ToF imaging arrays with integrated electronics.
