  We report on a new approach for positioning of self-assembled InAs quantum
dots on (110) GaAs with nanometer precision. By combining self-assembly of
quantum dots with molecular beam epitaxy on in-situ cleaved surfaces
(cleaved-edge overgrowth) we have successfully fabricated arrays of long-range
ordered InAs quantum dots. Both atomic force microscopy and
micro-photoluminescence measurements demonstrate the ability to control size,
position, and ordering of the quantum dots. Furthermore, single dot
photoluminescence investigations confirm the high optical quality of the
quantum dots fabricated.
