  We developed a thermodynamic supersaturation model for plasma-assisted
metalorganic chemical vapor deposition of InN. The model is based on the
chemical combination of indium with plasma-generated atomic nitrogen ions.
Indium supersaturation was analyzed for InN films grown by PA-MOCVD with
varying input flow of indium precursor. Raman spectroscopy, X-ray diffraction,
and atomic force microscopy provided feedback on structural properties and
surface morphology of grown films. Growth parameter variation effect on In
supersaturation was analyzed. InN films grown at varying growth parameters
resulting in the same In supersaturation value exhibit similar structural
properties and surface morphology.
