  We have combined direct nanofabrication by local anodic oxidation with
conventional electron-beam lithography to produce a parallel double quantum dot
based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography
methods allows to fabricate robust in-plane gates and Cr/Au top gate electrodes
on the same device for optimal controllability. This is illustrated by the
tunability of the interdot coupling in our device. We describe our fabrication
and alignment scheme in detail and demonstrate the tunability in
low-temperature transport measurements.
