  We present the findings of the superconductivity observed in the silicon
nanostructures prepared by short time diffusion of boron on the n-type Si(100)
surface. These Si-based nanostructures represent the p-type ultra-narrow
self-assembled silicon quantum wells, 2nm, confined by the delta - barriers
heavily doped with boron, 3nm. The EPR and the thermo-emf studies show that the
delta - barriers appear to consist of the trigonal dipole centres, which are
caused by the negative-U reconstruction of the shallow boron acceptors. Using
the CV and thermo-emf techniques, the transport of two-dimensional holes inside
SQW is demonstrated to be accompanied by single-hole tunneling through these
negative-U centres that results in the superconductivity of the delta -
barriers. The values of the correlation gaps obtained from these measurements
are in a good agreement with the data derived from the temperature and magnetic
field dependencies of the magnetic susceptibility, which reveal a strong
diamagnetism and additionally identify the superconductor gap value.
