  The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic
applications, but it is still challenging to realize the QAHE with tunable
magnetic and topological properties for building functional devices. Through
systematic first-principles calculations, we predict that the in-plane
magnetization induced QAHE with Chern numbers C = $\pm$1 and the out-of-plane
magnetization induced QAHE with high Chern numbers C = $\pm$3 can be realized
in a single material candidate, which is composed of van der Waals (vdW)
coupled Bi and MnBi$_2$Te$_4$ monolayers. The switching between different
phases of QAHE can be controllable by multiple ways, such as applying strain or
(weak) magnetic field or twisting the vdW materials. The prediction of an
experimentally available material system hosting robust, highly tunable QAHE
will stimulate great research interest in the field. Our work opens a new
avenue for the realization of tunable QAHE and provides a practical material
platform for the development of topological electronics.
