  We have studied the emission properties of self-organized InAs quantum dots
(QDs) grown in an InGaAs quantum well by metalorganic chemical vapor
deposition. Low-temperature photoluminescence spectroscopy shows emission from
single QDs around 1300 nm; we clearly observe the formation of neutral and
charged exciton and biexciton states, and we obtain a biexciton binding energy
of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV,
indicating strong confinement.
