  Hall effect is detected in organic field-effect transistors, using
appropriately shaped rubrene (C42H28) single crystals. It turned out that
inverse Hall coefficient, having a positive sign, is close to the amount of
electric-field induced charge upon the hole accumulation. The presence of the
normal Hall effect means that the electromagnetic character of the surface
charge is not of hopping carriers but resembles that of a two-dimensional
hole-gas system.
