  In this paper, a method is presented to create and characterize mechanically
robust, free standing, ultrathin, oxide films with controlled, nanometer-scale
thickness using Atomic Layer Deposition (ALD) on graphene. Aluminum oxide films
were deposited onto suspended graphene membranes using ALD. Subsequent etching
of the graphene left pure aluminum oxide films only a few atoms in thickness. A
pressurized blister test was used to determine that these ultrathin films have
a Young's modulus of 154 \pm 13 GPa. This Young's modulus is comparable to much
thicker alumina ALD films. This behavior indicates that these ultrathin
two-dimensional films have excellent mechanical integrity. The films are also
impermeable to standard gases suggesting they are pinhole-free. These
continuous ultrathin films are expected to enable new applications in fields
such as thin film coatings, membranes and flexible electronics.
