  We study dephasing in semiconductor-superconductor structures caused by
coupling to a voltage probe. We consider structures where the semiconductor
consists of two scattering regions between which partial dephasing is possible.
As a particular example we consider a situation with a double-barrier junction
in the normal region. For a single-mode system we study the conductance both as
a function of the position of the Fermi level and as a function of the barrier
transparency. At resonance, where the double-barrier is fully transparent, we
study the suppression of the ideal factor-of-two enhancement of the conductance
when a finite coupling to the voltage probe is taken into account.
