  The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is
studied both theoretically and experimentally. We find that the anomalous Hall
effect can be explained by the Lorentz force caused by the magnetic field of
ferromagnetic inclusions and by an inhomogeneous distribution of the current
density in the layer. The hysteretic dependence of the average magnetization of
ferromagnetic inclusions on an external magnetic field results in a hysteretic
dependence of RH(Hext). Thus we show the possibility of a hysteretic RH(Hext)
dependence (i.e. observation of the anomalous Hall effect) in thin conductive
layers with ferromagnetic inclusions in the absence of carriers spin
polarization.
