  A consequence of the disorder and Coulomb interaction competition is the
electron-glass phase observed in several Anderson-insulators. The disorder in
these systems, typically degenerate semiconductors, is stronger than the
interaction, more so the higher is the carrier-concentration N of the system.
Here we report on a new feature observed in the electron-glass phase of In_{x}O
with the lowest N yet studied. The feature, resolved as a broad peak in
field-effect measurements, has not been recognized in previously studied
Anderson-insulators. Several empirical facts associated with the phenomenon are
consistent with the conjecture that it reflects a correlated
charge-distribution. In particular, the feature may be turned on and off by
gate-voltage maneuvering, suggesting the relevance of charge-arrangements. It
may also be suppressed by either; temperature, non-ohmic field, or exposure to
infrared illumination. After being washed-out, the feature reappears when the
system is allowed to relax for sufficiently long time. A puzzling aspect that
arises is the apparent absence of the phenomenon when the carrier-concentration
increases above a certain value. This is reminiscent of the glass-transition
conundrum except that the role of temperature in the latter is played by
disorder. Analysis of these findings highlights several issues that challenge
our understanding of the disorder-interaction interplay in Anderson insulators.
