  In state-of-the-art silicon devices, mobility of the carrier is enhanced by
the lattice strain from the back substrate. Such an extra control of device
performance is significant in realizing high performance computing and should
be valid for electric-field-induced superconducting devices, too. However, so
far, the carrier density is the sole parameter for field-induced
superconducting interfaces. Here we show an active organic superconducting
field-effect-transistor whose lattice is modulated by the strain from the
substrate. The soft organic lattice allows tuning of the strain by a choice of
the back substrate to make an induced superconducting state accessible at low
temperature with a paraelectric solid gate. An active three terminal Josephson
junction device thus realized is useful both in advanced computing and in
elucidating a direct connection between filling-controlled and
bandwidth-controlled superconducting phases in correlated materials.
