  This work aims at analyzing the adequacy of Laguerre-Gauss (LG) beams and
three-level quantum systems to build quantum memories. We focus on such systems
in which there is a phenomenon called Eletromagnetic Induced Transparency (EIT)
which enables the information storage in atomic cells. We show both theoretical
and practical results regarding LG beams and the conditions according to which
EIT raises. The existence of such conditions is necessary to the implementation
of quantum memories in this scenario.
