  In the quest for switching of the charge carrier type in conductive
materials, we focus on nonsymmorphic crystals, which are expected to have
highly anisotropic folded Fermi surfaces due to the symmetry requirements.
Following simple tight-binding model simulation, we prepare nonsymmorphic IrO2
single-crystalline films with various growth orientations by molecular beam
epitaxy, and systematically quantify their Hall effect for the corresponding
field directions. The results clearly demonstrate that the dominant carrier
type can be intrinsically controlled by the magnetic field direction, as also
evidenced by first-principles calculations revealing nontrivial momentum
dependence of the group velocity and mass tensor on the folded Fermi surfaces
and its anisotropic nature for the field direction.
