  The last decade has seen a flurry of studies related to graphene nanoribbons
owing to their potential applications in the quantum realm. However, little
experimental work has been reported towards nanoribbons of other 2D materials
due to the absence of synthesis routes. Here, we propose a universal approach
to synthesize high-quality networks of nanoribbons from arbitrary 2D materials
while maintaining high crystallinity, sufficient yield, narrow size
distribution, and straight-forward device integrability. The wide applicability
of this technique is demonstrated by fabricating MoS2, WS2, WSe2, and graphene
nanoribbon field effect transistors that inherently do not suffer from
interconnection resistances. By relying on self-assembled and self-aligned
organic nanostructures as masks, we demonstrate the possibility of controlling
the predominant crystallographic direction of the nanoribbon's edges.
Electrical characterization shows record mobilities and very high ON currents
for various TMDCs despite extreme width scaling. Lastly, we explore decoration
of nanoribbon edges with plasmonic particles paving the way towards the
development of nanoribbon-based plasmonic sensing and opto-electronic devices.
