  We have investigated the correlation between the microwave loss and
patterning method for coplanar waveguide titanium nitride resonators fabricated
on Si wafers. Three different methods were investigated: fluorine- and
chlorine-based reactive ion etches and an argon-ion mill. At high microwave
probe powers the reactive etched resonators showed low internal loss, whereas
the ion-milled samples showed dramatically higher loss. At single-photon powers
we found that the fluorine-etched resonators exhibited substantially lower loss
than the chlorine-etched ones. We interpret the results by use of numerically
calculated filling factors and find that the silicon surface exhibits a higher
loss when chlorine-etched than when fluorine-etched. We also find from
microscopy that re-deposition of silicon onto the photoresist and side walls is
the probable cause for the high loss observed for the ion-milled resonators
