  Tantalum, tantalum oxide and their hetero-interfaces are of tremendous
technological interest in several applications spanning electronics, thermal
management, catalysis and biochemistry. For example, local oxygen stoichiometry
variation in TaOx memristors comprising of metallic (Ta) and insulating oxide
(Ta2O5) have been shown to result in fast switching on the sub-nanosecond
timescale over a billion cycles, relevant to neuromorphic computation. Despite
its broad importance, an atomistic scale understanding of oxygen stoichiometry
variation across Ta/TaOx hetero-interfaces, such as during early stages of
oxidation and oxide growth, is not well understood. This is mainly due to the
lack of a variable charge interatomic potential model for tantalum oxides that
can accurately describe the ionic interactions in the metallic (Ta) and oxide
(TaOx) environment as well as at their interfaces. To address this challenge,
we introduce a charge transfer ionic potential (CTIP) model for Ta/Ta-oxide
system by training against lattice parameters, cohesive energies, equations of
state, and elastic properties of various experimentally observed Ta2O5
polymorphs. The best set of CTIP parameters are determined by employing a
single-objective global optimization scheme driven by genetic algorithms
followed by local Simplex optimization. Our newly developed CTIP potential
accurately predicts structure, thermodynamics, energetic ordering of
polymorphs, as well as elastic and surface properties of both Ta and Ta2O5, in
excellent agreement with DFT calculations and experiments. We employ our newly
parameterized CTIP potential to investigate the early stages of oxidation of Ta
at different temperatures and atomic/molecular nature of the oxidizing species.
