  Two-dimensional magnetic materials (2DMM) are significant for studies on the
nature of 2D long range magnetic order but also for future spintronic devices.
Of particular interest are 2DMM where spins can be manipulated by electrical
conduction. Whereas Cr$_2$Si$_2$Te$_6$ exhibits magnetic order in few-layer
crystals, its large band gap inhibits electronic conduction. Here we show that
the defect-induced short-range crystal order in Cr$_2$Si$_2$Te$_6$ on the
length scale below 0.6 nm induces substantially reduced band gap and robust
semiconducting behavior down to 2 K that turns to metallic above 10 GPa. Our
results will be helpful to design conducting state in 2DMM and call for
spin-resolved measurement of the electronic structure in exfoliated ultrathin
crystals.
