  Point defects in silicon carbide are rapidly becoming a platform of great
interest for single photon generation, quantum sensing, and quantum information
science. Photonic crystal cavities (PCC) can serve as an efficient light-matter
interface both to augment the defect emission and to aid in studying the
defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon
carbide with embedded silicon vacancy centers. These cavities are used to
achieve Purcell enhancement of two closely spaced defect zero-phonon lines
(ZPL). Enhancements of >80-fold are measured using multiple techniques.
Additionally, the nature of the cavity coupling to the different ZPLs is
examined.
