  The present work studies the quasi one-dimensional $Ni(dmit)_2$-based
compounds within a correlated model. More specifically, we focus our attention
on the composed influence of the electronic dimerization-factor and the
repulsion, on the transport properties and the localization of the electronic
density in the ground-state. Those properties are studied through the
computation of the charge gaps (difference between the ionization potential and
the electro-affinity: IP-EA) and the long- and short-bond orders of an infinite
quarter-filled chain within a $t-J(t,U)$ model. The comparison between the
computed gaps and the experimental activation energy of the semiconductor
$NH_2Me_2 [Ni(dmit)_2]_2$ allows us to estimate the on-site electronic
repulsion of the $Ni(dmit)_2$ molecule to $1.16eV$.
