  Here, we report the performance of vacancy affected supercell of a hybrid
Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET
at its ballistic transport limit using Non Equilibrium Green's Function (NEGF)
methodology. A supercell is made of the 3p configuration of armchair nanoribbon
that is doped on the either side with 6 BN atoms and is also H-passivated. The
type of vacancies studied are mono (B removal), di (B and N atom removal) and
hole (removal of 6 atoms) formed all at the interface of carbon and BN atoms.
Density Functional Theory (DFT) is employed to evaluate the material properties
of this supercell like bandgap, effective mass and density of states (DOS).
Further band gap and effective mass are utilized in self-consistent
PoissonSchrodinger calculator formalized using NEGF approach. For all the
vacancy defects, material properties show a decrease which is more significant
for hole defects. This observation is consistent in the device characteristics
as well where ON-current (ION ) and Sub Threshold Slope (SS) shows the maximum
increment for hole vacancy and increase is more significant becomes when the
number of defects increase.
