  A novel method for extracting threshold voltage and substrate effect
parameters of MOSFETs with constant current bias at all levels of inversion is
presented. This generalized constant-current (GCC) method exploits the
charge-based model of MOSFETs to extract threshold voltage and other
substrate-effect related parameters. The method is applicable over a wide range
of current throughout weak and moderate inversion and to some extent in strong
inversion. This method is particularly useful when applied for MOSFETs
presenting edge conduction effect (subthreshold hump) in CMOS processes using
Shallow Trench Isolation (STI).
