  Burst effect of Silicon Photomultiplier (SiPM) at cryogenic temperatures have
been discovered few years ago looking at the dark count rate of SiPMs at liquid
nitrogen temperatures. Bursts are trains of single signals that happen randomly
and are clearly distinguishable from the primary DCR and correlated noise
because of their particular time distribution. In this article we describe a
detailed study related to both the external causes that triggers bursts and to
the phenomenon, internal to the sensor, that produces this dark signals. We
related the burst occurrence to the luminescence produced by some trapping
centers in the SiPMs when they are excited by ionizing radiation that impinges
on the sensor.
