  The large-scale fabrication of three-terminal magnetic tunnel junctions
(MTJs) with high yield is becoming increasingly crucial, especially with the
growing interest in spin-orbit torque (SOT) magnetic random access memory
(MRAM) as the next generation of MRAM technology. To achieve high yield and
consistent device performance in MTJs with perpendicular magnetic anisotropy,
an integration flow has been developed that incorporates special MTJ etching
technique and other CMOS-compatible processes on a 300 mm wafer manufacturing
platform. Systematic studies have been conducted on device performance and
statistical uniformity, encompassing magnetic properties, electrical switching
behavior, and reliability. Achievements include a switching current of 680 uA
at 2 ns, a TMR as high as 119%, ultra-high endurance (over 1012 cycles), and
excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to
99.6%. The proposed integration process, featuring high yield, is anticipated
to streamline the mass production of SOT-MRAM.
