  We studied the tunnel transport between the edge of a Pfaffian fractional
quantum Hall state and that of an integer quantum Hall state. Based on the
duality argument between the strong and weak tunnelings, we found that an
Andreev-like reflection appeared in the strong tunneling regime. We calculated
the charge conductance in the weak and strong tunneling regimes for the
low-voltage limit. In the weak tunneling limit, $dI}/dV$ was proportional to
$V^{1/\nu}$ with bias voltage $V$ and $\nu=1/2$. By contrast, in the strong
tunneling limit, $dI/dV$ was expressed by $(e^{2}/h)2\nu/(1+\nu)$ with a
correction term. We expect that this condition can be realized experimentally
at the point contact between a fractional quantum Hall state with $\nu=5/2$ and
an integer quantum Hall state with $\nu=3$.
