  Bi2Se3 is an important semiconductor thermoelectric material and a prototype
topological insulator. Here we report observation of Shubnikov-de Hass (SdH)
oscillations accompanied by quantized Hall resistances (Rxy) in highly-doped
n-type Bi2Se3 with bulk carrier concentrations of few 10^19 cm^-3. Measurements
under tilted magnetic fields show that the magnetotransport is 2D-like, where
only the c-axis component of the magnetic field controls the Landau level
formation. The quantized step size in 1/Rxy is found to scale with the sample
thickness, and average ~e2/h per quintuple layer (QL). We show that the
observed magnetotransport features do not come from the sample surface, but
arise from the bulk of the sample acting as many parallel 2D electron systems
to give a multilayered quantum Hall effect. Besides revealing a new electronic
property of Bi2Se3, our finding also has important implications for electronic
transport studies of topological insulator materials.
