  We successfully demonstrate a monolithic integrated dual-polarization (DP) IQ
modulator based on thin-film lithium niobate (TFLN) platform with a silicon
substrate, which consists of IQ modulators, spot-size converters (SSCs) and a
polarization rotator combiner (PRC). After coupled with polarization
maintaining fibers, the measured insertion loss of the modulator is 12 dB. In
addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate
transmission.
