  The study presented here was initiated by a discussion to investigate the
possibility of using synchrotron radiation as a source for the Next Generation
Lithography (NGL) based on the EUV-concept (Extreme Ultra-Violet; here 13.5 nm
or 11.3 nm radiation, respectively). The requirements are: 50 W, 2% bandwidth
and minimal power outside this bandwidth. Three options were investigated. The
first two deal with radiation from bending magnets and undulators. The results
confirm the earlier work by Oxfords Instrument and others that these
light-sources lack in-band power while emitting excessive out-of-band
radiation. The third approach is a FEL (Free Electron Laser) driven by a 500
MeV linear accelerator with a superconducting mini-undulator as radiation
emitting device. Such a device would produce in-band EUV-power in excess of 50
W with negligible out-of-band power.
