  We demonstrate a capability of deterministic doping at the single atom level
using a combination of direct write focused ion beam and solid-state ion
detectors. The focused ion beam system can position a single ion to within 35
nm of a targeted location and the detection system is sensitive to single low
energy heavy ions. This platform can be used to deterministically fabricate
single atom devices in materials where the nanostructure and ion detectors can
be integrated, including donor-based qubits in Si and color centers in diamond.
