  In the paper, the effect of the electric field on the conditions of formation
and on the period of the surface superlattice of adatoms in $n$-GaAs
semiconductor is investigated. It is established that in GaAs semiconductor, an
increase in the electric field strength, depending on the direction, leads to
an increase or decrease of the critical temperature (the critical concentration
of adatoms), at which the formation of self-organized nanostructure is
possible. It is shown that in strongly alloyed $n$-GaAs semiconductor, an
increase of the electric field strength leads to a monotonous change (decrease
or increase depending on the direction of the electric field) of the period of
self-organized surface nanostructures of adatoms.
