  We construct the Barut-Girardello coherent states for charge carriers in
anisotropic 2D-Dirac materials immersed in a constant homogeneous magnetic
field which is orthogonal to the sample surface. For that purpose, we solve the
anisotropic Dirac equation and identify the appropriate arising and lowering
operators. Working in a Landau-like gauge, we explicitly construct nonlinear
coherent states as eigenstates of a generalized annihilation operator with
complex eigenvalues which depends on an arbitrary function $f$ of the number
operator. In order to describe the anisotropy effects on these states, we
obtain the Heisenberg uncertainty relation, the probability density, mean
energy value and occupation number distribution for three different functions
$f$. For the case in which the anisotropy is caused by uniaxial strain, we
obtain that when a stress is applied along the $x$-axis of the material
surface, the probability density for the nonlinear coherent states is smaller
compared to when the material is stressed along the orthogonal axis.
