  After establishing the fundamental understanding and the high throughput
topological characterization of nearly all inorganic three-dimensional
materials, the general interest and the demand of functional applications drive
the research of topological insulators to the exploration of systems with a
more robust topological nature and fewer fabrication challenges. The successful
demonstration of the room-temperature quantum spin Hall (QSH) states in
bismuthene/SiC(0001), thus, triggers the search of two-dimensional topological
systems that are experimentally easy to access and of even larger topological
gaps. In this work, we propose a family of III-V honeycomb monolayers on
SiO$_{2}$ to be the next generation of large gap QSH systems, based on which a
spintronic device may potentially operate at room temperature due to its
enlarged topological gap ($\sim$ 900 meV) as compared to bismuthene/SiC(0001).
Fundamentally, this also realizes a band-inversion type QSH insulator that is
distinct to the Kane-Mele type bismuthene/SiC(0001).
