  The possibility of optimization of high voltage hybrid SIT-MOS transistors
(HSMT) by local reduction of the lifetime near anode emitter and/or reduction
of the anode emitter injection ability by three different ways has been
investigated using two-dimensional numerical simulation. It has been shown that
all of these methods proposed previously for optimization of insulated-gate
bipolar transistor (IGBT) are physically equivalent and makes it possible to
reduce turn-off energy losses $E_{off}$ in HSMT by 30-40%. Importantly that
energy $E_{off}$ in optimized HSMT appears to be 15-35% less than in equivalent
trench IGBT under other equal conditions.
