  A theoretical investigation of the excess energy dissipation of highly
excited photoinjected carriers in zinc selenide (ZnSe) is presented. The
calculations are performed by solving numerically coupled quantum transport
equations for the carriers and the optical phonons in order to derive the
evolution of their nonequilibrium temperatures, dubbed quasitemperatures (or
nonequilibrium temperatures). It is shown that the carrier energy dissipation
occurs in a picosecond time scale.
