  By developing a two-dimensional (2D) full quantum simulation, the attributes
of carbon nanotube field-effect transistors (CNTFETs) in different temperatures
have been comprehensively investigated. Simulations have been performed by
employing the self-consistent solution of 2D Poisson-Schrodinger equations
within the nonequilibrium Green's function (NEGF) formalism. Principal
characteristics of CNTFETs such as current capability, drain conductance,
transconductance, and subthreshold swing (SS) have been investigated.
Simulation results present that the drain conductance and on-current of the
CNTFET increases as temperature raises from 250 to 500 K. Meanwhile the
on-/off-current ratio deteriorated due to faster growth in off-current. Also
the effects of temperature on short channel effects (SCEs) such as
drain-induced barrier lowering (DIBL) and threshold voltage roll-off have been
studied. Results show that the subthreshold swing and DIBL parameters are
almost linearly correlated, so the degradation of these parameters has the same
origin and can be perfectly influenced by the temperature.
