  The present paper corresponds to the third work of the author related to the
magnetotransport properties concerning on the graphene systems. In the first
one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE,
was analysed, (Hidalgo, 2014). The subject of the second one was the
understanding of the fractional quantum Hall also in the MG, (MGFQHE),
(Hidalgo, 2015), basing us in our model on the fractional quantum Hall effect
in semiconductor quantum systems, Hidalgo (2013). The aim of the present work
is the analysis of the integer quantum Hall effect observed in bilayer
graphene, (BG), BGIQHE, as a function of both, the gate voltage and the
magnetic field. Our approach is a single electron approach, firstly developed
for the study of the integer quantum Hall (IQHE) and Shubnikov-de Haas (SdH)
effects of a two-dimensional electron gas (2DEG) in any semiconductor quantum
well (QW), (Hidalgo, 1995, 1998, 2007). The extension of this model for the BG
reproduces its main observed features for the IQHE and the SdH, and as a
function of both, the gate voltage and the magnetic field, in particular the
plateaux at the values , with n=0,1,2... Therefore, the approach integrates the
quantum Hall effects (integer and fractional) observed in both, QW and
graphene, in the same physical frame.
