  In this paper, we report on the fabrication and the low-temperature
characterization of extremely high-ohmic microstrip resistors made of a thin
film of weakly oxidized titanium. Nearly linear voltage-current characteristics
were measured at temperatures down to $T \sim \unit[20]{mK}$ for films with
sheet resistivity up to as high as $\sim \unit[7]{k\Omega}$, i.e. about an
order of magnitude higher than our previous findings for weakly oxidized Cr.
Our analysis indicates that such an improvement can help to create an
advantageous high-impedance environment for different Coulomb blockade devices.
Further properties of the Ti film addressed in this work show a promise of
low-noise behavior of the resistors when applied in different realizations of
the quantum standard of current.
