  We report on key signal contributions in photothermal deflection spectroscopy
(PDS) of semiconductors at photon energies below the bandgap energy and show
how to extract the actual absorption properties from the measurement data. To
this end, we establish a rigorous computation scheme for the deflection signal
including semi-analytic raytracing to analyze the underlying physical effects.
The computation takes into account linear and nonlinear absorption processes
affecting the refractive index and thus leading to a deflection of the probe
beam. We find that beside the linear mirage effect, nonlinear absorption
mechanisms make a substantial contribution to the signal for strongly focussed
pump beams and sample materials with high two-photon absorption coefficients.
For example, the measured quadratic absorption contribution exceeds 5% at a
pump beam intensity of about ${1.3}\times{10^{5}}\;{W}/{cm^{2}}$ in Si and at
${5}\times{10^{4}}\;{W}/{cm^{2}}$ in GaAs. In addition, our method also
includes thermal expansion effects as well as spatial gradients of the
attenuation properties. We demonstrate that these effects result in an
additional deflection contribution which substantially depends on the distance
of the photodetector from the readout point. This distance dependent
contribution enhances the surface related PDS signal up to two orders of
magnitude and may be misinterpreted as surface absorption if not corrected in
the analysis of the measurement data. We verify these findings by PDS
measurements on crystalline silicon at a wavelength of 1550 nm and provide
guidelines how to extract the actual attenuation coefficient from the PDS
signal.
