  Chip-scale integrated light sources are a crucial component in a broad range
of photonics applications. III-V semiconductor nanowire emitters have gained
attention as a fascinating approach due to their superior material properties,
extremely compact size, and the capability to grow directly on
lattice-mismatched silicon substrates. Although there have been remarkable
advances in nanowire-based emitters, their practical applications are still in
the early stages due to the difficulties in integrating nanowire emitters with
photonic integrated circuits (PICs). Here, we demonstrate for the first time
optically pumped III-V nanowire array lasers monolithically integrated on
silicon-on-insulator (SOI) platform. Selective-area growth of purely
single-crystalline InGaAs/InGaP core/shell nanowires on an SOI substrate
enables the nanowire array to form a photonic crystal nanobeam cavity with
superior optical and structural properties, resulting in the laser to operate
at room temperature. We also show that the nanowire array lasers are
effectively coupled with SOI waveguides by employing nanoepitaxy on a
pre-patterned SOI platform. These results represent a new platform for
ultra-compact and energy-efficient optical links, and unambiguously point the
way toward practical and functional nanowire lasers.
