  We report accurate, calculated electronic, transport, and bulk properties of
zinc blende gallium arsenide (GaAs). Our ab-initio, non-relativistic,
self-consistent calculations employed a local density approximation (LDA)
potential and the linear combination of atomic orbital (LCAO) formalism. We
strictly followed the Bagayoko, Zhao, and William (BZW) method as enhanced by
Ekuma and Franklin (BZW-EF). Our calculated, direct band gap of 1.429 eV, at an
experimental lattice constant of 5.65325 {\AA}, is in excellent agreement with
the experimental values. The calculated, total density of states data
reproduced several experimentally determined peaks. We have predicted an
equilibrium lattice constant, a bulk modulus, and a low temperature band gap of
5.632 {\AA}, 75.49 GPa, and 1.520 eV, respectively. The latter two are in
excellent agreement with corresponding, experimental values of 75.5 GPa (74.7
GPa) and 1.519 eV, respectively. This work underscores the capability of the
local density approximation (LDA) to describe and to predict accurately
properties of semiconductors, provided the calculations adhere to the
conditions of validity of DFT [AIP Advances, 4, 127104 (2014)].
