  Resistivity measurements of TiSe$_2$ typically show only a weak change in
gradient at the charge density wave transition at $T_{CDW}\approx$ 200~K, but
more prominently feature a broad peak at a lower $T_{peak}\sim$ 165~K, which
has remained poorly understood despite decades of research on the material.
Here we present quantitative simulations of the resistivity using a simplified
parametrization of the normal state band structure, based on recent
photoemission data. Our simulations reproduce the overall profile of the
resistivity of TiSe$_2$, including its prominent peak, without implementing the
CDW at all. We find that the peak in resistivity corresponds to a crossover
between a low temperature regime with electron-like carriers only, to a regime
around room temperature where thermally activated and highly mobile hole-like
carriers dominate the conductivity. Even when implementing substantial
modifications to model the CDW below the transition temperature, we find that
these thermal population effects still dominate the transport properties of
TiSe$_2$.
