  We have grown thin films of the Heusler compound Co_2FeSi by RF magnetron
sputtering. On (100)-oriented MgO substrates we find fully epitaxial
(100)-oriented and L2_1 ordered growth. On Al_2O_3 (11-20) substrates, the film
growth is (110)-oriented, and several in-plane epitaxial domains are observed.
The temperature dependence of the electrical resistivity shows a power law with
an exponent of 7/2 at low temperatures. Investigation of the bulk magnetic
properties reveals an extrapolated saturation magnetization of 5.0 mu_B/fu at 0
K. The films on Al_2O_3 show an in-plane uniaxial anisotropy, while the
epitaxial films are magnetically isotropic in the plane. Measurements of the
X-ray magnetic circular dichroism of the films allowed us to determine element
specific magnetic moments. Finally we have measured the spin polarization at
the surface region by spin-resolved near-threshold photoemission and found it
strongly reduced in contrast to the expected bulk value of 100%. Possible
reasons for the reduced magnetization are discussed.
