  We investigate the electronic structure and chemical activity of rippled
phosphorene induced by large compressive strains via first-principles
calculation. It is found that phosphorene is extraordinarily bendable, enabling
the accommodation of ripples with large curvatures. Such highly rippled
phosphorene shows a strong anisotropy in electronic properties. For ripples
along the armchair direction, the band gap changes from 0.84 to 0.51 eV for the
compressive strain up to -20% and further compression shows no significant
effect, for ripples along the zigzag direction, semiconductor to metal
transition occurs. Within the rippled phosphorene, the local electronic
properties, such as the modulated band gap and the alignments of frontier
orbitals, are found to be highly spatially dependent, which may be used for
modulating the injection and confinement of carriers for optical and
photovoltaic applications. The examination of the interaction of a physisorbed
NO molecule with the rippled phosphorene under different compressive strains
shows that the chemical activities of the phosphorene are significantly
enhanced at the top and bottom peaks of the ripples, indicated by the enhanced
adsorption and charge transfer between them. All these features can be ascribed
to the effect of curvatures, which modifies the orbital coupling between atoms
at the ripple peaks.
