  We report the low temperature carrier transport properties of a series of
nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples
very close to the critical concentration N_c for the metal-insulator
transition. The concentration of the sample closest to N_c is 1.0004N_c and it
is unambiguously shown that the critical conductivity exponent is 0.5.
Properties of insulating samples are discussed in the context of Efros and
Shklovskii's variable range hopping conduction.
