  In the present work, we report the experimental thermopower ($\alpha$) data
for ZnV$_{2}$O$_{4}$ compound in the high temperature range 300-600 K. The
value of $\alpha$ is found to be $\sim$184 and $\sim$126 $\mu$V/K at $\sim$300
and $\sim$600 K, respectively. The temperature dependent behavior of $\alpha$
is almost linear in the measured temperature range. To understand the large and
positive $\alpha$ value observed in this compound, we have also investigated
the electronic and thermoelectric properties by combining the
\textit{ab-initio} electronic structures calculations with Boltzmann transport
theory. Within the local spin density approximation plus Hubbard U, the
anti-ferromagnetic ground state calculation gives an energy gap $\sim$0.33 eV
for U=3.7 eV, which is in accordance with the experimental results. The
effective mass for holes in the valance band is found nearly four times that of
electrons in conduction band. The large effective mass of holes are mainly
responsible for the observed positive and large $\alpha$ value in this
compound. There is reasonably good matching between calculated and experimental
$\alpha$ data in the temperature range 300-410 K. The power factor calculation
shows that thermoelectric properties in high temperature region can be enhanced
by tuning the sample synthesis conditions and suitable doping. The estimated
value of \textit{figure-of-merit}, ZT, at different absolute temperature
suggest that ZnV$_{2}$O$_{4}$ compound can be a good thermoelectric material in
high temperature range.
