  We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based
waveguide system, serving as a platform for efficient light coupling between an
integrated III-V quantum dot emitter to an on-chip quantum photonic integrated
circuit defined on a silicon substrate. We propose a platform consisting of a
hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the
telecom C-band near 1550 nm. The platform can be fabricated using the existing
semiconductor processing technologies. Our numerical studies reveal nearly 86%
of the optical field transfer efficiency between geometrically-optimized InP/Si
and Si waveguides, considering propagating field modes along a tapered
geometry. The coupling efficiency of a dipole emitting to the hybrid InP/Si
waveguide is evaluated to ~60%, which results in more than 50% of the total
on-chip optical field transfer efficiency from the dipole to the Si waveguide.
We also consider the off-chip outcoupling efficiency of the propagating photon
field along the Si waveguide by examining the normal to the chip plane and
in-plain outcoupling configurations. In the former case, the outcoupling
amounts to ~26% when using the circular Bragg grating outcoupler design. In the
latter case, the efficiency reaches up to 10%. Finally, we conclude that the
conceptual device's performance is weakly susceptible to the transferred photon
wavelength, offering a broadband operation within the 1.5-1.6 {\mu}m spectral
range.
