  Wide bandgap semiconductors have become the most attractive materials in
optoelectronics in the last decade. Their wide bandgap and intrinsic properties
have advanced the development of reliable photodetectors to selectively detect
short wavelengths (i.e., ultraviolet, UV) in high temperature regions (up to
300{\deg}C). The main driver for the development of high-temperature UV
detection instrumentation is in-situ monitoring of hostile environments and
processes found within industrial, automotive, aerospace, and energy production
systems that emit UV signatures. In this review, a summary of the optical
performance (in terms of photocurrent-to-dark current ratio, responsivity,
quantum efficiency, and response time) and uncooled, high-temperature
characterization of III-nitride, SiC, and other wide bandgap semiconductor UV
photodetectors is presented.
