  In this work, we present a computational study on the possibility of strain
engineering in monolayer Black Phosphorus (black P) and Blue Phosphorus (blue
P) based MOSFETs. The material properties like band structure, carrier
effective masses, carrier densities at band extrema are evaluated using
Generalized Gradient Approximation (GGA) in Density Functional Theory
(DFT).Thereafter self-consistent Non-Equilibrium Greens Function (NEGF)
simulations are carried out to study the device performance metrics (such as
output characteristics, ON currents, transconductance etc.) of such strained
black P and blue P based MOSFETs. Our simulations show that carrier effective
masses in blue P are more sensitive to strain applied in both zigzag and
armchair directions. Blue P is more responsive in strain engineering for n-MOS
and p-MOS. Except for black P based FETs with strain in armchair direction,
overall the blue P (black P) n-MOSFET (p-MOSFET) show moderate to significant
improvement in performance with tensile (compressive) strain in the transport
directions.
