  Antiferromagnetic spintronics have attracted wide attention due to its great
potential in constructing ultra-dense and ultra-fast antiferromagnetic memory
that suits modern high-performance information technology. The electrical 180o
switching of N\'eel vector is a long-term goal for developing
electrical-controllable antiferromagnetic memory with opposite N\'eel vectors
as binary "0" and "1". However, the state-of-art antiferromagnetic switching
mechanisms have long been limited for 90o or 120o switching of N\'eel vector,
which unavoidably require multiple writing channels that contradicts
ultra-dense integration. Here, we propose a deterministic switching mechanism
based on spin-orbit torque with asymmetric energy barrier, and experimentally
achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3.
Such a 180o switching is read out by the N\'eel vector-induced anomalous Hall
effect. Based on our writing and readout methods, we fabricate an
antiferromagnet device with electrical-controllable high and low resistance
states that accomplishes robust write and read cycles. Besides fundamental
advance, our work promotes practical spin-splitting antiferromagnetic devices
based on spin-splitting antiferromagnet.
