  Understanding the origin of hysteresis in the channel resistance from top
gated graphene transistors is important for transistor applications.
Capacitance - voltage measurements across the gate oxide on top gated bilayer
graphene show hysteresis with a charging and discharging time constant of ~100
{\mu}s. However, the measured capacitance across the graphene channel does not
show any hysteresis, but shows an abrupt jump at a high channel voltage due to
the emergence of an order, indicating that the origin of hysteresis between
gate and source is due to charge traps present in the gate oxide and graphene
interface.
