  Photoluminescence spectroscopy and Hanle effect measurements are used to
investigate carrier spin dephasing and recombination times in the semiconductor
alloy GaAsBi as a function of temperature and excitation energy. Hanle effect
measurements reveal the product of g-factor and effective spin dephasing time
(gTs) ranges from 0.8 ns at 40 K to 0.1 ns at 120 K. The temperature dependence
of gTs provides evidence for a thermally activated effect, which is attributed
to hole localization at single Bi or Bi cluster sites below 40 K.
