  Integration of high quality semiconductor-superconductor devices into
scalable and CMOS compatible architectures remains an outstanding challenge,
currently hindering their practical implementation. Here, we demonstrate growth
of InAs nanowires monolithically integrated on Si inside lateral cavities
containing superconducting TiN elements. This technique allows growth of hybrid
devices characterized by sharp semiconductor-superconductor interfaces and with
alignment along arbitrary crystallographic directions. Electrical
characterization at low temperature reveals proximity induced superconductivity
in InAs via a transparent interface.
