  We show that infrared imaging of the charge density profile in organic
field-effect transistors (FETs) can probe transport characteristics which are
difficult to access by conventional contact-based measurements. Specifically,
we carry out experiments and modeling of infrared spectromicroscopy of
poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a
relatively low resistance of the gate insulators. We conclude that the mobility
of P3HT has a power-law density dependence, which is consistent with the
activated transport in disorder-induced tails of the density of states.
