  The superconductor Sn$_{1-x}$In$_{x}$Te is derived from the topological
crystalline insulator SnTe and is a candidate topological superconductor. So
far, high-quality thin films of this material have not been available, even
though such samples would be useful for addressing the nature of its
superconductivity. Here we report the successful molecular beam epitaxy growth
of superconducting Sn$_{1-x}$In$_{x}$Te films by using Bi$_2$Te$_3$ as a buffer
layer. The data obtained from tunnel junctions made on such films show the
appearance of two superconducting gaps, which points to the coexistence of bulk
and surface superconductivity. Given the spin-momentum locking of the surface
states, the surface superconductivity is expected to be topological with an
effective $p$-wave character. Since the topological surface states of SnTe
consist of four Dirac cones, this platform offers an interesting playground for
studying topological surface superconductivity with additional degrees of
freedom.
