  We propose a manufacturable solution for field-free writing of perpendicular
SOT-MTJ without sacrificing integration density on a 200 mm wafer. The
field-free writing operation can be achieved by unipolar current pulses via
engineering the interlayer exchange coupling in SOT-MTJ thin films. The
proposed device can reach a high writing speed of up to 1 ns and work properly
at temperature of 100 C. The deterministic writing of SOT-MTJ by unipolar
current offers an effective approach for high density SOT-MRAM integration.
