  Topological materials (TMs) showcase intriguing physical properties defying
expectations based on conventional materials, and hold promise for the
development of devices with new functionalities. While several theoretically
proposed TMs have been experimentally confirmed, extensive experimental
exploration of topological properties as well as applications in realistic
devices have been held back due to the lack of excellent TMs in which
interference from trivial Fermi surface states is minimized. We tackle this
problem in the present work by applying our recently developed method of
symmetry indicators to all non-magnetic compounds in the 230 space groups. An
exhaustive database search reveals thousands of TM candidates. Of these, we
highlight the excellent TMs, the 258 topological insulators and 165 topological
crystalline insulators which have either noticeable full band gap or a
considerable direct gap together with small trivial Fermi pockets. We also give
a list of 489 topological semimetals with the band crossing points located near
the Fermi level. All predictions obtained through standard generalized gradient
approximation (GGA) calculations were cross-checked with the modified
Becke-Johnson (MBJ) potential calculations, appropriate for narrow gap
materials. With the electronic and optical behavior around the Fermi level
dominated by the topologically non-trivial bands, these newly found TMs
candidates open wide possibilities for realizing the promise of TMs in
next-generation electronic devices.
