  Aluminium based platforms have allowed to reach major milestones for
superconducting quantum circuits. For the next generation of devices, materials
that are able to maintain low microwave losses while providing new
functionalities, such as large kinetic inductance or compatibility with CMOS
platform are sought for. Here we report on a combined direct current (DC) and
microwave investigation of titanium nitride lms of dierent thicknesses grown
using CMOS compatible methods. For microwave resonators made of TiN lm of
thickness $\sim$3 nm, we measured large kinetic inductance LK $\sim$ 240 pH/sq,
high mode impedance of $\sim$ 4.2 k$\Omega$ while maintaining microwave quality
factor $\sim$ 10^5 in the single photon limit. We present an in-depth study of
the microwave loss mechanisms in these devices that indicates the importance of
quasiparticles and provide insights for further improvement.
