  The interaction of a single manganese impurity with silicon is analyzed in a
combined experimental and theoretical study of the electronic, magnetic, and
structural properties of manganese-doped silicon clusters. The structural
transition from exohedral to endohedral doping coincides with a quenching of
high-spin states. For all geometric structures investigated, we find a similar
dependence of the magnetic moment on the manganese coordination number and
nearest neighbor distance. This observation can be generalized to manganese
point defects in bulk silicon, whose magnetic moments fall within the observed
magnetic-to-nonmagnetic transition, and which therefore react very sensitively
to changes in the local geometry. The results indicate that high spin states in
manganese-doped silicon could be stabilized by an appropriate lattice
expansion.
