  A new type of (Ga,Mn)As microstructures with laterally confined electronic
and magnetic properties has been realized by growing (Ga,Mn)As films on
[1-10]-oriented ridge structures with (113)A sidewalls and (001) top layers
prepared on GaAs(001) substrates. The temperature- and field-dependent
magnetotransport data of the overgrown structures are compared with those
obtained from planar reference samples revealing the coexistence of electronic
and magnetic properties specific for (001) and (113)A (Ga,Mn)As on a single
sample.
