  A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed
Bragg reflector grown on a silicon substrate. The electroluminescence output
increased by 2.5 times for a GaN diode coupled to a properly designed resonant
cavity. Theoretical calculations showed that this enhancement could increase up
to four times for transmission through a sem-transparent metal contact design,
up to eight times for a flip-chip design
