  Spincaloritronic signal generation due to thermal spin injection and spin
transport is demonstrated in a non-degenerate Si spin valve. The spin-dependent
Seebeck effect is used for the spincaloritronic signal generation, and the
thermal gradient of about 200 mK at an interface of Fe and Si enables
generating a spin voltage of 8 {\mu}V at room temperature. A simple expansion
of a conventional spin drift-diffusion model with taking into account the
spin-dependent Seebeck effect shows semiconductor materials are quite potential
for the spincaloritronic signal generation comparing with metallic materials,
which can allow efficient heat recycling in semiconductor spin devices.
