  We study the vibrational, magnetic and transport properties of Few Layer
Graphene (FLG) using Raman and electron spin resonance spectroscopy and
microwave conductivity measurements. FLG samples were produced using wet
chemical exfoliation with different post-processing, namely ultrasound
treatment, shear mixing, and magnetic stirring. Raman spectroscopy shows a low
intensity D mode which attests a high sample quality. The G mode is present at
$1580$ cm$^{-1}$ as expected for graphene. The 2D mode consists of 2 components
with varying intensities among the different samples. This is assigned to the
presence of single and few layer graphene in the samples. ESR spectroscopy
shows a main line in all types of materials with a width of about $1$ mT and
and a $g$-factor in the range of $2.005-2.010$. Paramagnetic defect centers
with a uniaxial $g$-factor anisotropy are identified, which shows that these
are related to the local sp$^2$ bonds of the material. All kinds of
investigated FLGs have a temperature dependent resistance which is compatible
with a small gap semiconductor. The difference in resistance is related to the
different grain size of the samples.
