  The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a
promising platform for the development of atom scale devices, with recent work
showing their creation through precise desorption of surface hydrogen atoms.
While samples with relatively large areas of the hydrogen terminated 2x1
surface are routinely created using an in-situ methodology, surface defects are
inevitably formed as well reducing the area available for patterning. Here, we
present a catalog of several commonly found defects of the H-Si(100)-2x1
surface. By using a combination of scanning tunneling microscopy (STM) and
non-contact atomic force microscopy (nc-AFM), we are able to extract useful
information regarding the atomic and electronic structure of these defects.
This allowed for the confirmation of literature assignments of several commonly
found defects, as well as proposed classification of previously unreported and
unassigned defects. By better understanding the structure and origin of these
defects, we make the first steps toward enabling the creation of superior
surfaces ultimately leading to more consistent and reliable fabrication of atom
scale devices.
