  From the solution of a two-band model, we predict that the thermal and
electrical transport across the junction of a semimetal and an excitonic
insulator will exhibit high resistance behavior and low entropy production at
low temperatures, distinct from a junction of a semimetal and a normal
semiconductor. This phenomenon, ascribed to the dissipationless exciton flow
which dominates over the charge transport, is based on the much longer length
scale of the change of the effective interface potential for electron
scattering due to the coherence of the condensate than in the normal state.
