  The FeSe samples in the form of polycrystals, single crystals and thin films
have been prepared and characterized. The synthesized material has been hot
isostatically pressed under pressure of 0.45 GPa of 5N purity argon with the
use of the high gas pressure trap system (HGPTS). Thin films have been
fabricated by the mixed procedures with the use of DC sputtering from various
types of targets and processed employing the HGPTS. The used HGPTS assures a
full separation of the active volume for synthesis or crystal growth of
material and the inert gas medium. The obtained FeSe0.88 samples have Tc
between 8 and 12 K. The samples have been characterized by SEM, EDX, XRD,
magnetic susceptibility and resistivity measurements.
