  We present comparative theoretical investigation of thermoelectric power and
Hall effect in the Hubbard model for correlated metal and Mott insulator
(considered as prototype cuprate superconductor) for different concentrations
of current carriers. Analysis is performed within standard DMFT approximation.
For Mott insulator we consider the typical case of partial filling of the lower
Hubbard band (hole doping). We calculate the dependence of thermopower on
doping level and determine the critical concentration of carriers corresponding
to sign change of thermopower. An anomalous dependence of thermopower on
temperature is obtained significantly different from linear temperature
dependence typical for the usual metals. The role of disorder scattering is
analyzed on qualitative level. The comparison with similar studies of the Hall
effect shows, that breaking of electron - hole symmetry leads to the appearance
of the relatively large interval of band - fillings (close to the half -
filling) where thermopower and Hall effects have different signs. We propose a
certain scheme allowing to determine the number of carriers from ARPES data and
perform semi - quantitative estimate of both thermopower and Hall coefficient
using the usual DFT calculations of electronic spectrum.
