  The temperature variation of partial mobility and effective mobility for
undoped p-GaSb have been calculated using Matthiessen rule. The effective
mobility depends on the ionized, acoustic, polar optical and non-polar optical
scattering processes. The analysis shows that the effective mobility for
undoped p-GaSb at room temperature is about 905 cm^2/Vs with the hole
concentration of about 10^16 cm^-3. The dependence of mobility on the hole
concentration at 300 K has been analyzed and shows that mobility decreases with
increasing hole concentrations. The result of this analysis then is used to
analyze the electronic properties of thin film undoped p-GaSb which grown by
MOCVD method. The films have been characterized using Hall-Van der Pauw method
to determine the mobilities and hole concentrations. Comparison between
experimental data and the theoretical analysis shows that the films have the
high level of impurities. Therefore the four scattering mechanisms are governed
the hole mobility of undoped p-GaSb at room temperature.
