  Properly tuning the Fermi level position in topological insulators is of
vital importance to tailor their spin-polarized electronic transport and to
improve the efficiency of any functional device based on them. Here we report
the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of a
highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top
of large area (4'') Si(111) substrates. The bottom Sb2Te3 layer serves as an
ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also
inducing a remarkable shift of the Fermi level to place it very close to the
Dirac point, as visualized by angle-resolved photoemission spectroscopy. In
order to exploit such ideal topologically-protected surface states, we
fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and
spin-charge conversion (SCC) is probed by spin pumping ferromagnetic resonance.
A large SCC is measured at room temperature, which is interpreted within the
inverse Edelstein effect (IEE), thus resulting in a conversion efficiency
lambda_IEE of 0.44 nm. Our results demonstrate the successful tuning of the
surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ
MOCVD process, which is highly interesting in view of its future technology
transfer.
