  Manipulating spin-orbit coupling (SOC) is important for devices such as
spin-orbit torque based memory and its understanding is neccessary to answer
several fundamental open questions in triplet state superconductivity,
topological insulators and Majorana fermions. Here we report spin splitting of
25 meV at the LaAlO3/SrTiO3 (110) interface for in-plane spins at a current
density of 1.4x104 A/cm2, which is large compared to that found in
semiconductor heterostructures or the LaAlO3/SrTiO3 (100) interface, and in
addition it is anisotropic. The anisotropy arises from the difference in
electron effective mass along the [001] and [1-10] directions. Our study
predicts a spin splitting energy > 1000 meV at a current density of 107 A/cm2,
which is enormous compared to metallic systems and will be an ideal spin
polarized source. In addition to the in-plane effect, there is an unexpected
gate-tunable out-of-plane SOC at the LaAlO3/SrTiO3 (110) interface when the
spins lie out-of-plane due to broken symmetry in the plane of the interface. We
demonstrate that this can be manipulated by varying the LaAlO3 thickness
showing that this interface can be engineered for spin-orbit torque devices.
