  We present a novel method enabling precise post-fabrication modulation of the
electrical resistance in micrometer-scale regions of amorphous indium oxide
(a-InO$_x$) films. By subjecting initially insulating films to an electron beam
at room temperature, we demonstrate that the exposed region of the films
becomes superconducting. The resultant superconducting transition temperature
($T_c$) is adjustable up to 2.8 K by changing the electron dose and
accelerating voltage. This technique offers a compelling alternative to
traditional a-InO$_x$ annealing methods for both fundamental investigations and
practical applications. Moreover, it empowers independent adjustment of
electrical properties across initially identical a-InO$_x$ samples on the same
substrate, facilitating the creation of superconducting microstructures with
precise $T_c$ control at the micrometer scale. The observed resistance
modifications likely stem from photoreduction induced by X-ray and/or UV
radiation emitted during electron beam interactions with the film and
substrate.
