  A simple theoretical method for deducing the effective bond-orbital model
(EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model,
the interaction parameters for zinc-blende (ZB) structures are used as an
initial guess for WZ structure based on the two-center approximation. The
electronic band structure of III-nitride WZ semiconductors can hence be
produced by utilizing this set of parameters modified to include effects due to
three-center integrals and fitting with first-principles calculations. Details
of the semi-empirical fitting procedure for constructing the EBOM Hamiltonian
for bulk III-nitride WZ semiconductors are presented. The electronic band
structure of bulk AlN, GaN, and InN with WZ structure calculated by EBOM with
modified interaction parameters are shown and compared to the results obtained
from density functional (DFT) theory with meta-generalized gradient
approximation (mGGA). The set of parameters are further optimized by using a
genetic algorithm. In the end, electronic band structures and electron (hole)
effective masses near the zone center calculated by the proposed model with
best fitting parameters are analyzed and compared with the $\mathbf{k}\cdot
\mathbf{p}$ model.
