  Wurtzite Boron Nitride ($w$BN) is a wide band gap BN polymorph with peculiar
mechanical properties (hardness and stiffness). After its first synthesis in
1963 as a transformation of hexagonal BN ($h$BN) under high temperature and
pressure conditions, a lot of progress have been made in order to stabilize
wurtzite phase at atmospheric pressure. Today the crystallization of good
quality samples is finally possible. This fact motivates our first principles
study of the electronic, vibrational and light absorption and emission
properties of $w$BN over a wide range of pressures. Our findings are important
in view of the potential use of $w$BN as a dielectric for integration in
BN-based technologies in optoelectronics and harsh environment applications.
