  In the past decade, semiconducting carbon nanotube thin films have been
recognized as contending materials for wide-ranging applications in
electronics, energy, and sensing. In particular, improvements in large-area
flexible electronics have been achieved through independent advances in
post-growth processing to resolve metallic versus semiconducting carbon
nanotube heterogeneity, in improved gate dielectrics, and in self-assembly
processes. Moreover, controlled tuning of specific device components has
afforded fundamental probes of the trade-offs between materials properties and
device performance metrics. Nevertheless, carbon nanotube transistor
performance suitable for real-world applications awaits understanding-based
progress in the integration of independently pioneered device components. We
achieve this here by integrating high-purity semiconducting carbon nanotube
films with a custom-designed hybrid inorganic-organic gate dielectric. This
synergistic combination of materials circumvents conventional design
trade-offs, resulting in concurrent advances in several transistor performance
metrics such as transconductance (6.5 {\mu}S/{\mu}m), intrinsic field-effect
mobility (147 cm^2/Vs), sub-threshold swing (150 mV/decade), and on/off ratio
(5 x 10^5), while also achieving hysteresis-free operation in ambient
conditions.
