  A new methodology for fundamental studies of radiation effects in solids is
herein introduced by using a plasma Focused Ion Beam (PFIB). The classical
example of ion-induced amorphization of single-crystalline pure Si is used as a
proof-of-concept experiment that delineates the advantages and limitations of
this new technique. We demonstrate both the feasibility and invention of a new
ion irradiation mode consisting of irradiating a single-specimen in multiple
areas, at multiple doses, in specific sites. This present methodology suggests
a very precise control of the ion beam over the specimen, with an error in the
flux on the order of only 1%. In addition, the proposed methodology allows the
irradiation of specimens with higher dose rates when compared with conventional
ion accelerators and implanters. This methodology is expected to open new
research frontiers beyond the scope of materials at extremes such as in
nanopatterning and nanodevices fabrication.
