  Transport properties of holes in InP nanowires were calculated considering
electron-phonon interaction via deformation potentials, the effect of
temperature and strain fields. Using molecular dynamics, we simulate nanowire
structures, LO-phonon energy renormalization and lifetime. The valence band
ground state changes between light- and heavy-hole character, as the strain
fields and the nanowire size are changed. Drastic changes in the mobility arise
with the onset of resonance between the LO-phonons and the separation between
valence subbands.
