  Given the growing significance of 2D materials in various optoelectronic
applications, it is imperative to have simulation tools that can accurately and
efficiently describe electron correlation effects in these systems. Here, we
show that the recently developed bootstrap embedding (BE) accurately predicts
electron correlation energies and structural properties for 2D systems. Without
explicit dependence on the reciprocal space sum ($k$-points) in the correlation
calculation, BE can typically recover $\sim$99.5% of the total electron
correlation energy in 2D semi-metal, insulator and semiconductors. We
demonstrate that BE can predict lattice constants and bulk moduli for 2D
systems with high precision. Furthermore, we highlight the capability of BE to
treat electron correlation in twisted bilayer graphene superlattices with large
unit cells containing hundreds of carbon atoms. We find that as the twist angle
decreases towards the magic angle, the correlation energy initially decreases
in magnitude, followed by a subsequent increase. We conclude that BE is a
promising electronic structure method for future applications to 2D materials.
