  We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device
structure and demonstrate the ability to control the Verwey transition with
static electric fields. The Verwey transition temperature ($T_V$) increases for
both polarities of the electric field, indicating the effect is not driven by
changes in carrier concentration. Energetics of induced electric polarization
and/or strain within the Fe$_3$O$_4$ film provide a possible explanation for
this behavior. Electric field control of the Verwey transition leads directly
to a large magnetoelectric effect with coefficient of 585 pT m/V.
