  Generalized electrostatic quantum swap gate implemented in the chain of 2
double coupled quantum dots using single electron in semiconductor is presented
in tight-binding simplistic model specifying both analytic and numerical
results. The anticorrelation principle coming from Coulomb electrostatic
repulsion is exploited in single electron devices. The formation of quantum
entanglement is specified and supported by analytical results. The difference
between classical and quantum picture is given. The correlations between
geometry of quantum structures and entanglement dynamics are shown in
analytical way. Effective wavefunction of single electrons is extracted from 2
electron electrostatic interactions. The presented results have its
significance in cryogenic CMOS quantum technologies that gives perspective of
implementation of semiconductor quantum computer on massive scale.
  Keyword: electrostatic quantum swap gate, entanglement, anticorrelation,
tight-binding model, two-body wavefunction, correlation-anticorrelation
crossover, density matrix of 2 electron system, single electron devices,
coupled quantum dots
