  The migration motion of defects in metal halide perovskites quantum dots
(MHPQDs) results in charge-carrier trapping become more complicated. We study
two-step trapping mediated by mobile defects between the ground state of MHPQDs
and a fixed-depth defect using a full-configuration defect method, where all
possible trapping processes mediated by these mobile defects could be
reproduced and the fastest channels among them are picked out. We find that
these two-step trapping processes could keep more one order of magnitude faster
than these direct ones as mobile defect with the appropriate localization
strength, which implies that these indirect trapping should play the crucial
rule to determine the non-radiative recombination losses. These results provide
the significant explanation for studying non-radiation processes of carriers in
the presence of the migration defects in recent experiments. Moreover, this
model will be available to analyze some key performance related defects in
electronic devices.
