  Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted
magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As
buffer, on their magnetic and magneto-transport properties has been
investigated. High-resolution X-ray diffraction, applied to characterize the
structural quality and misfit strain in the layers, proved that the layers were
fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or
tensile strain, respectively. Ferromagnetic Curie temperature and
magnetocrystalline anisotropy of the layers have been examined by using
magneto-optical Kerr effect magnetometry and low-temperature magneto-transport
measurements. Post-growth annealing treatment of the layers has been shown to
enhance the hole concentration and Curie temperature in the layers.
