  A new approach to the growth of diluted magnetic semiconductors with two
dimensional electron gas in InAs quantum well has been developed. The method is
based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te
heterostructures with a III-V/II-VI interface inside. The giant Zeeman
splitting of the InAs conduction band caused by exchange interaction with Mn2+
ions has been proved by measuring the microwave radiation induced spin
polarized electric currents.
