  Monolayer transition metal dichalcogenides (TMDs) bare large Berry curvature
hotspots readily exploitable for geometric band effects. Tailoring and
enhancement of these features via strain is an active research direction. Here,
we consider spinless two- and three-band, and spinful four-band models capable
to quantify Berry curvature and orbital magnetic moment of strained TMDs.
First, we provide a $k\cdot p$ parameter set for MoS$_2$, MoSe$_2$, WS$_2$, and
WSe$_2$ in the light of the recently released ab initio and experimental band
properties. Its validity range extends from $K$ valley edge to about hundred
millielectron volts into valence and conduction bands for these TMDs. To expand
this over a larger part of the Brillouin zone, we incorporate strain to an
available three-band tight-binding Hamiltonian. With these techniques we
demonstrate that both the Berry curvature and the orbital magnetic moment can
be doubled compared to their intrinsic values by applying typically a 2.5%
biaxial tensile strain. These simple band structure tools can find application
in the quantitative device modeling of the geometric band effects in strained
monolayer TMDs.
