  We propose a surface ion trap design incorporating microwave control
electrodes for near-field single-qubit control. The electrodes are arranged so
as to provide arbitrary frequency, amplitude and polarization control of the
microwave field in one trap zone, while a similar set of electrodes is used to
null the residual microwave field in a neighbouring zone. The geometry is
chosen to reduce the residual field to the 0.5% level without nulling fields;
with nulling, the crosstalk may be kept close to the 0.01% level for realistic
microwave amplitude and phase drift. Using standard photolithography and
electroplating techniques, we have fabricated a proof-of-principle electrode
array with two trapping zones. We discuss requirements for the microwave drive
system and prospects for scalability to a large two-dimensional trap array.
