  Evidence of both fractional and integer quantum hall effects (QHE) in three
dimensional bulk replica opal (250nm diameter) structures of non-crystalline
carbon are presented. In a remarkably soft quantum limit of ~ 40K temperature
and about one tesla of magnetic field clear hall steps, such as n= 2/3, 4/5, 1
and others were observed to be coordinated with the minima of longitudinal
magneto-resistance. This behavior is indicative of macroscopic quantum
phenomenon associated with electronic condensation into a strongly correlated
quantum liquid (QL). For other systems, such as very high mobility,
two-dimensional, electron (hole)-gas or (TDEG) these effects typically arise
under high magnetic fields (B) and at low temperatures (T), i.e., in the
extreme quantum limit (B/T>1). Currently, QHE is applied as calibration
benchmark, international resistance standard, and a characterization technique
for semiconductor heterostructures. We believe that applications can be
widespread if the devices and the operating conditions were more accessible.
