  We investigate transport properties of stable gate-defined quantum dots
formed in an InSb$_{0.87}$As$_{0.13}$ quantum well. High $\textit{g}$-factor
and strong spin-orbit-coupling make InSb$_x$As$_{1-x}$ a promising platform for
exploration of topological superconductivity and spin-based devices. We extract
a nearly isotropic in-plane effective $\textit{g}$-factor by studying the
evolution of Coulomb blockade peaks and differential conductance as a function
of the magnitude and direction of magnetic field. The in-plane
$\textit{g}$-factors, $|g^*_{[1\bar{1}0]}|$ and $|g^*_{[110]}|$, range from 49
- 58. Interestingly, this $\textit{g}$-factor is higher than that found in
quantum dots fabricated from pure InSb quantum wells. We demonstrate tunable
spin-orbit-coupling by tracking a spin-orbit-coupling mediated avoided level
crossing between the ground state and an excited state in magnetic field. By
increasing the electron density, we observed an increase in an avoided crossing
separation, $\Delta_{SO}$. The maximum energy separation extracted is
$\Delta_{SO}$$\sim$100 $\mu$eV.
