  We describe a new approach to compute the electron-phonon self-energy and
carrier mobilities in semiconductors. Our implementation does not require a
localized basis set to interpolate the electron-phonon matrix elements, with
the advantage that computations can be easily automated. Scattering potentials
are interpolated on dense $\mathbf{q}$ meshes using Fourier transforms and ab
initio models to describe the long-range potentials generated by dipoles and
quadrupoles. To reduce significantly the computational cost, we take advantage
of crystal symmetries and employ the linear tetrahedron method and double-grid
integration schemes, in conjunction with filtering techniques in the Brillouin
zone. We report results for the electron mobility in Si, GaAs, and GaP obtained
with this new methodology.
