  We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagnetic
semiconductor family, by Mn ion implantation and pulsed laser annealing. Clear
ferromagnetic hysteresis loops and a perpendicular magnetic anisotropy are
observed up to a Curie temperature of 42 K. Large values of negative
magnetoresistance and magnetic circular dichroism as well as anomalous Hall
effect are further evidences of a ferromagnetic order in InMnP. An effort is
made to understand the transport mechanism in InMnP using the theoretical
models. We find that the valence band of InP does not merge with the impurity
band of the heavily doped ferromagnetic InMnP. Our results suggest that
impurity band conduction is a characteristic of Mn-doped III-V semiconductors
which have deep Mn-acceptor levels.
