  We report on the growth and optical characterisation of droplet GaAs quantum
dots with extremely-thin (11 nm) capping layers. To achieve such result, an
internal thermal heating step is introduced during the growth and its role in
the morphological properties of the quantum dots obtained is investigated via
scanning electron and atomic force microscopy. Photoluminescence measurements
at cryogenic temperatures show optically stable, sharp and bright emission from
single quantum dots, at near-infrared wavelengths. Given the quality of their
optical properties and the proximity to the surface, such emitters are ideal
candidates for the investigation of near field effects, like the coupling to
plasmonic modes, in order to strongly control the directionality of the
emission and/or the spontaneous emission rate, crucial parameters for quantum
photonic applications.
