  Liquid phase epitaxy of gallium arsenide (LPE GaAs) has been investigated
intensively from the late 1960's to the present and has now a special place in
the manufacture of wide band, compound semiconductor radiation detectors.
Although this particular process appears to have gained prominence in the last
three decades, it is interesting to note that its origins reach back to 1836
when Frankenheim made his first observations. A brief review is presented from
a semiconductor applications point of view on how this subject developed. This
is followed by a report on LPE GaAs growth at the Australian Nuclear Science
and Technology Organisation (ANSTO).
