  Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied
using rocking-curve analysis of reflection high-energy electron diffraction
(RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but is
unstable with respect to the change to the (2x6)/(3x6) structure at lower
temperatures. Our RHEED rocking-curve analysis at high temperatures revealed
that the c(8x2) surface has the structure which is basically the same as that
recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found
that the surface atomic configurations are locally fluctuated at high
temperatures without disturbing the c(8x2) periodicity.
