  We present a detailed study of the magnetic properties of
low-temperature-molecular-beam-epitaxy grown Ge:Mn dilute magnetic
semiconductor films. We find strong indications for a frozen state of
Ge_{1-x}Mn_{x}, with freezing temperatures of T_f=12K and T_f=15K for samples
with x=0.04 and x=0.2, respectively, determined from the difference between
field-cooled and zero-field-cooled magnetization. For Ge_{0.96}Mn_{0.04}, ac
susceptibility measurements show a peak around T_f, with the peak position T'_f
shifting as a function of the driving frequency f by Delta T_f' / [T_f' Delta
log f] ~ 0.06, whereas for sample Ge_{0.8}Mn_{0.2} a more complicated behavior
is observed. Furthermore, both samples exhibit relaxation effects of the
magnetization after switching the magnitude of the external magnetic field
below T_f which are in qualitative agreement with the field- and
zero-field-cooled magnetization measurements. These findings consistently show
that Ge:Mn exhibits a frozen magnetic state at low temperatures and that it is
not a conventional ferromagnet.
