  We develop a multi-valley effective mass theory for substitutional donors in
silicon in an inhomogeneous environment. Valley-orbit coupling is treated
perturbatively. We apply the theory to the Stark effect in Si:P. The method
becomes more accurate at high fields, and it is designed to give correct
experimental binding energies at zero field. Unexpectedly, the ground state
energy for the donor electron is found to increase with electric field as a
consequence of spectrum narrowing of the 1s manifold. Our results are of
particular importance for the Kane quantum computer.
