  Capitalizing on the directed nature of the atomic fluxes in molecular beam
epitaxy, we propose and demonstrate the sequential directional deposition of
lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer
thickness of each constituent atomic species, i.e. Ga, In, and N, is deposited
subsequently from the same direction by rotating the sample and operating the
shutters accordingly. Using multiple iterations of this process, we achieve the
growth of homogeneous shells on a single side facet of the nanowires. For
higher In content and thus lattice mismatch, we observe a strain-induced
bending of the nanowire heterostructures. The incorporation of In and the
resulting emission spectra are systematically investigated as a function of
both the growth temperature and the In/Ga flux ratio.
