  Charge transport in amorphous oxide semiconductors is often described as the
band transport affected by disorder in the form of random potential barriers
(RB). Theoretical studies in the framework of this approach neglected so far
the percolation nature of the phenomenon. In this article, a recipe for
theoretical description of charge transport in the RB model is formulated using
percolation arguments. Comparison with the results published so far evidences
the superiority of the percolation approach.
