  We study the electronic structure of a new type of Fibonacci superlattice
based on Si $\delta$-doped GaAs. Assuming that $\delta$-doped layers are
equally spaced, quasiperiodicity is introduced by selecting two different donor
concentrations and arranging them according to the Fibonacci series along the
growth direction. The one-electron potential due to $\delta$-doping is obtained
by means of the Thomas-Fermi approach. The resulting energy spectrum is then
found by solving the corresponding effective-mass wave equation. We find that a
self-similar spectrum can be seen in the band structure. Electronic transport
properties of samples are also discussed and related to the degree of spatial
localization of electronic envelope-functions.
