  In classical binary holography, a target pattern located at infinity is
generated by the diffraction of a plane wave passing through a binary mask with
holes of the same size, placed at specific positions of a rectangular grid.
Fresnel binary atom holography was recently proposed as a means for achieving
nanometer-resolution mask-based lithography with metastable atom beams. In
practice, there will be fabrication imposed limits: the binary mask will have a
minimum hole size, a minimum distance between the holes in the grid~(pitch), a
maximum size, and the target pattern plane will always have a finite distance
from the mask. In this paper, we show that, in praxis, for a given wavelength,
mask, and target pattern sizes, there will be a cross-over value for the
distance between the mask and the target pattern plane (the screen plane) which
results in aliasing-free patterns. It is demonstrated how this insight can lead
to the generation of better-resolved patterns of higher contrast and nanometer
resolution can be achieved within experimental limitations. Since flux is one
of the main factors influencing the quality of patterns fabricated by
nano-lithography, we obtain an expression for the ``patterning flux'' (the flux
that contributes to producing the target pattern, normalized by the flux that
is incident onto the structured portion of the mask). Numerically we find that
its ratio scales approximately like $x^{-2}$ where $x$ is the mask-screen
distance over the cross-over distance. The method that we propose can be used
with any beam that can be modeled as a scalar wave, including acoustic waves
and other matter-wave beams such as helium ions or electrons.
