  Remarkable systems have been reported recently using the polylithic
integration of semiconductor optoelectronic devices and plasmonic materials
exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional
noble metals, the ENZ and plasmonic response is achieved near their plasma
frequencies, limiting plasmonic optoelectronic device design flexibility. Here,
we leverage an all-epitaxial approach to monolithically and seamlessly
integrate designer plasmonic materials into a quantum dot light emitting diode
(LED), leading to a ~5.6 x enhancement over an otherwise identical
non-plasmonic control sample. Devices exhibited optical powers comparable, and
temperature performance far superior, to commercially-available devices.
