  We show that a multiple hit noise reduction technique involving the
acceptance of only a fraction of the allowed atomistic deposition events could,
by significantly suppressing the formation of high steps and deep grooves,
greatly facilitate the identification of the universality class of limited
mobility discrete solid-on-solid conserved nonequilibrium models of epitaxial
growth. In particular, the critical growth exponents of the discrete one
dimensional molecular beam epitaxy growth model are definitively determined
using the noise reduction technique, and the universality class is established
to be that of the nonlinear continuum fourth order conserved epitaxial growth
equation.
