  We have investigated shot noise in a 6-nm-diameter, semiconducting
multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950
MHz. We find a transconductance of 3 - 3.5 $\mu$S for optimal positive and
negative source-drain voltages V. For the gate referred input voltage noise, we
obtain 0.2 and 0.3 $\mu{V}/ \sqrt{Hz}$ for V>0 and V<0, respectively. As
effective charge noise this corresponds to $2-3 \cdot 10^{-5}$ e/$\sqrt{Hz}$.
