  In this paper we study LaAlO$_3$/Eu$_{1-x}$La$_x$TiO$_3$/SrTiO$_3$ structures
with nominally x = 0, 0.1 and different thicknesses of the
Eu$_{1-x}$La$_x$TiO$_3$ layer. We observe that both systems have many
properties similar to previously studied LaAlO$_3$/EuTiO$_3$/SrTiO$_3$ and
other oxide interfaces, such as the formation of a 2D electron liquid for 1 or
2 unit cells of Eu$_{1-x}$La$_x$TiO$_3$; a metal-insulator transition driven by
the thickness increase of Eu$_{1-x}$La$_x$TiO$_3$ layer; the presence of an
Anomalous Hall effect (AHE) when driving the systems above the Lifshitz point
with a backgate voltage; and a minimum in the temperature dependence of the
sheet resistance below the Lifshitz point in the one-band regime, which becomes
more pronounced with increasing gate voltage. However, and notwithstanding the
likely presence of magnetism in the system, we do not attribute that minimum to
the Kondo effect, but rather to the properties of SrTiO$_3$ crystal and the
inevitable effects of charge trapping when using back gates.
