  The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs
heterostructures with Mn deluted in GaAs cover layers and with atomically
controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm)
in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been
investigated. The mass magnetization all of the samples of
GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the
magnetic field that pointed out on the presence of low-dimensional
ferromagnetism in the manganese depletion layer of GaAs based structures. It
has been estimated the manganese content threshold at which the ferromagnetic
ordering was found.
