  We demonstrate high-frequency mechanical resonators in ballistic graphene p-n
junctions. Fully suspended graphene devices with two bottom gates exhibit
ballistic bipolar behavior after current annealing. We determine the graphene
mass density and built-in tension for different current annealing steps by
comparing the measured mechanical resonant response to a simplified membrane
model. We consistently find that after the last annealing step the mass density
compares well with the expected density of pure graphene. In a graphene
membrane with high built-in tension, but still of macroscopic size with
dimensions 3 $\times$ 1 $\mu m^{2}$, a record resonance frequency of 1.17 GHz
is observed after the final current annealing step. We further compare the
resonance response measured in the unipolar with the one in the bipolar regime.
Remarkably, the resonant signals are strongly enhanced in the bipolar regime.
This enhancement is caused in part by the Fabry-Perot resonances that appear in
the bipolar regime and possibly also by the photothermoelectric effect that can
be very pronounced in graphene p-n junctions under microwave irradiation.
