  In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N,
P, As, and Sb) under vertical strain are investigated. The band structures
state that MoSi2N4 is an indirect semiconductor, whereas other compounds are
direct semiconductors. The vertical strain has been selected to modify the
electrical properties. The bandgap shows a maximum and decreases for both
tensile and compressive strains. The valence band at K-point displays a large
spin-splitting, whereas the conduction band has a negligible splitting. On the
other hand, the second conduction band has a large spin-splitting and moves
down under vertical strain which leads to a large spin-splitting in both
conduction and valence bands edges. The projected density of states along with
the projected band structure clarifies the origin of these large
spin-splittings. These three spin-splittings can be controlled by vertical
strain.
