  We investigate localization properties in the highly anisotropic and
intrinsically disordered layered material, which is analogous to high-Tc
cuprates. By varying the anisotropy of the system which is parameterized by the
interlayer hopping $tp$, we find a crossover from two-dimensional (2D) to
three-dimensional (3D) behavior at a critical hopping amplitude $tp_c$, where a
mobility edge starts to appear. We show that below the mobility edge,
anisotropic localization effect may exist for a finite size system, when the
$ab$-plane localization length is longer than the system size and the $c$-axis
localization length is shorter than the system size. Nevertheless, we argue
that such anisotropic localization can not account for the ``semiconductor''
like behavior of the $c$-axis resistivity of high $\Tc$ cuprates.
