  We have investigated the field-induced superconductivity-destroying quantum
transition in amorphous indium oxide films at low temperatures down to 30 mK.
It has been found that, on the high-field side of the transition, the
magnetoresistance reaches a maximum and the phase can be insulating as well as
metallic. With further increasing magnetic field the film resistance drops and
approaches in the high-field limit the resistance value at transition point so
that at high fields the metallic phase occurs for both cases. We give a
qualitative account of this behavior in terms of field-induced destruction of
localized electron pairs.
