  We performed comparative experimental investigation of superconducting NbN
nanowires which were prepared by means of positive-and negative electron-beam
lithography with the same positive tone Poly-methyl-methacrylate (PMMA) resist.
We show that nanowires with a thickness 4.9 nm and widths less than 100 nm
demonstrate at 4.2 K higher critical temperature and higher density of critical
and retrapping currents when they are prepared by negative lithography. Also
the ratio of the experimental critical-current to the depairing critical
current is larger for nanowires prepared by negative lithography. We associate
the observed enhancement of superconducting properties with the difference in
the degree of damage that nanowire edges sustain in the lithographic process. A
whole range of advantages which is offered by the negative lithography with
positive PMMA resist ensures high potential of this technology for improving
performance metrics of superconducting nanowire singe-photon detectors.
