  A new device structure for spin transfer torque based magnetic random access
memory is proposed for on-chip memory applications. Our device structure
exploits spin Hall effect to create a differential memory cell that exhibits
fast and energy-efficient write operation. Moreover, due to inherently
differential device structure, fast and reliable read operation can be
performed. Our simulation study shows 10X improvement in write energy over the
standard 1T1R STT-MRAM memory cell, and 1.6X faster read operation compared to
single-ended sensing (as in standard 1T1R STT-MRAMs). The bit-cell
characteristics are promising for high performance on-chip memory applications.
