  An effect of paramagnetic impurity located in a vicinity of a quantum well
(QW) on spin polarization of the carriers in the QW is analyzed theoretically.
Within approach of Bardeen's tunneling Hamiltonian the problem is formulated in
terms of Anderson-Fano model of configuration interaction between a localized
hole state at Mn and continuum of heavy hole states in the InGaAs-based QW. The
hybridization between the localized state and the QW leads to resonant
enhancement of interband radiative recombination. The splitting of the
configuration resonances induced by splitting of the localized state in
magnetic field results in circular polarization of light emitted from the QW.
The developed theory is capable of explaining known experimental results and
allows for calculation of the photoluminescence spectra and dependence of
integral polarization on temperature and other parameters.
