  Bias stress effects in n-channel organic field-effect transistors (OFETs) are
investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric,
both under vacuum and in ambient. We find that the amount of bias stress is
very small as compared to all (p-channel) OFETs reported in the literature.
Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week
results in a decrease of the source drain current of only ~1% under vacuum and
~10% in air. This remarkable stability of the devices leads to characteristic
time constants, extracted by fitting the data with a stretched exponential -
that are \tau ~ 2\cdot10^9 s in air and \tau ~ 5\cdot10^9 s in vacuum -
approximately two orders of magnitude larger than the best values reported
previously for p-channel OFETs.
