  Ultra-low-k (ULK) materials are essential for today's production of
integrated circuits (ICs). However, during the manufacturing process the ULK's
low dielectric constant (k-value) increases due to the replacement of
hydrophobic species with hydrophilic groups. We investigate the use of plasma
enhanced fragmented silylation precursors to repair this damage. The
fragmentation of the silylation precursors octamethylcyclotetrasiloxane (OMCTS)
and bis(dimethylamino)-dimethylsilane (DMADMS) and their possible repair
reactions are studied using density functional theory (DFT) and molecular
dynamics (MD) simulations.
