  The quantum anomalous Hall effect in magnetic topological insulators has been
recognized as a promising platform for applications in quantum metrology. The
primary reason for this is the electronic conductance quantization at zero
external magnetic field, which allows to combine it with the quantum standard
of voltage. Here we demonstrate a measurement scheme that increases the
robustness of the zero magnetic field quantum anomalous Hall resistor, allowing
for higher operational currents. This is achieved by simultaneous current
injection into the two disconnected perimeters of a multi-terminal Corbino
device to balance the electrochemical potential between the edges, screening
the electric field that drives back-scattering through the bulk, and thus
improving the stability of the quantization at increased currents. This
approach is not only applicable to devices based on the quantum anomalous Hall
effect, but more generally can also be applied to existing quantum resistance
standards that rely on the integer quantum Hall effect.
