  A short summary of the drift-diffusion-Langevin formalism for calculating
finite-frequency shot noise in diffusive conductors is presented. Two new
results are included in this presentation. First, we arrive at a simple (but
accurate) phenomenological expression for the semiclassical distribution
function of electrons in the presence of electron-electron scattering. Second,
it is shown that in thin samples, low-frequency shot noise may be large even if
the sample length is much larger than the electron-phonon relaxation length.
