  Using a simple quantum-mechanical model, we explore a tunneling anisotropic
magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a
ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous
polarization gives rise to the Rashba and Dresselhaus spin-orbit coupling
(SOC). For realistic parameters of the model, we predict sizable TAMR
measurable experimentally. For asymmetric FTJs, which electrodes have different
work functions, the built-in electric field affects the SOC parameters and
leads to TAMR dependent on ferroelectric polarization direction. The SOC change
with polarization switching affects tunneling conductance, revealing a new
mechanism of tunneling electroresistance (TER). These results demonstrate new
functionalities of FTJs which can be explored experimentally and used in
electronic devices.
