  The surface and electronic structure of MOCVD-grown layers of
Ga(0.92)In(0.08)N have been investigated by means of photoemission. An
additional feature at the valence band edge, which can be ascribed to the
presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface
was prepared by argon ion sputtering and annealing. Stability of chemical
composition of the investigated surface subjected to similar ion etching was
proven by means of X-ray photoemission spectroscopy.
