  We present an $sp^3$ tight-binding model for the calculation of the
electronic and optical properties of wurtzite semiconductor quantum dots (QDs).
The tight-binding model takes into account strain, piezoelectricity, spin-orbit
coupling and crystal-field splitting. Excitonic absorption spectra are
calculated using the configuration interaction scheme. We study the electronic
and optical properties of InN/GaN QDs and their dependence on structural
properties, crystal-field splitting, and spin-orbit coupling.
