  The transition metal dichalcogenides 1T-TaS$_2$ and 1T-TaSe$_2$ have been
extensively studied for the complicated correlated electronic properties. The
origin of different surface electronic states remains controversial. We apply
scanning tunneling microscopy and spectroscopy to restudy the surface
electronic state of bulk 1T-TaSe$_2$. Both insulating and metallic states are
identified in different areas of the same sample. The insulating state is
similar to that in 1T-TaS$_2$, concerning both the dI/dV spectrum and the
orbital texture. With further investigations in single-step areas, the
discrepancy of electronic states is found to be associated with different
stacking orders. The insulating state is most possibly a single-layer property,
modulated to a metallic state in some particular stacking orders. Both the
metallic and large-gap insulating spectra, together with their corresponding
stacking orders, are dominant in 1T-TaSe$_2$. The connected metallic areas lead
to the metallic transport behavior. We then reconcile the bulk metallic and
surface insulating state in 1T-TaSe$_2$. The rich phenomena in 1T-TaSe$_2$
deepen our understanding of the correlated electronic state in bulk 1T-TaSe$_2$
and 1T-TaS$_2$.
