  We show that, for some semiconductor devices and physical experiments,
processes which scatter electrons {\em into} a state $|{\bf k}\rangle$ can
contribute strongly to the decay of a nonequilibrium electron occupation of
$|{\bf k}\rangle$. For electrons, the decay rate $\gamma({\bf k})$ is given by
the sum of the total scattering-out {\em and scattering-in} rates of state
$|{\bf k}\rangle$. The scattering-in term, which is often neglected in
calculations, increases $\gamma({\bf k})$ of low energy electrons injected into
semidegenerate systems, which includes many doped semiconductor structures at
nonzero temperatures, particularly those of reduced dimensions.
