  Interfacial thermal resistance arises challenges for the thermal management
as the modern semiconductors are miniatured to nanoscale. Previous studies
found that graded mass distribution in interface can maximumly enhance the
interfacial thermal conductance of crystalline interface, however, whether this
strategy is effective for amorphous interface is less explored. In this work,
graded mass distribution in the amorphous interface between crystalline Si and
crystalline Ge is optimized to increase the interfacial thermal conductance by
the extended atomistic Greens function method.
