  The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal
thin-film magnets is explored in this study and the damping response is shown
to be linked to the underlying electronic properties. By substituting the Z
elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga,
Sb), electronic properties such as the minority spin band gap, Fermi energy
position in the gap and spin polarization can be tuned and the consequence on
magnetization dynamics analyzed. The experimental results allow us to directly
explore the interplay of spin polarization, spin gap, Fermi energy position and
the magnetic damping obtained in these films, together with ab initio
calculation predictions. The ultra-low magnetic damping coefficients measured
in the range 4.1 10-4-9 10-4 for Co 2 MnSi, Ge, Sn, Sb are the lowest values
obtained on a conductive layer and offers a clear experimental demonstration of
theoretical predictions on Half-Metal Magnetic Heusler compounds and a pathway
for future materials design.
