  We study the effect of the strain on the energy bands of TaIrTe4 sheet and
the photocurrent in the Cu-TaIrTe4-Cu heterojunction by using the quantum
transport simulations. It is found that the Weyl points can be completely
broken with increasing of the strain along z dirction. One can obtain a large
photocurrent in the Cu-TaIrTe4-Cu heterojunction in the absence of the strain.
While the photocurrent can be sharply enhanced by the strain and reach a large
value. Accordingly, the maximum values of the photocurrent can be explained in
terms of the transitions between peaks of density of states and band
structures. The strain-induced energy bands and photocurrent exhibit
anisotropic behaviors. Our results provide a novel route to effectively
modulate the energy bands and the photocurrent by utilizing mechanical methods
for TaIrTe4-based devices.
