  We utilized a simple, robust, first principle method, based on basis set
optimization with the BZW-EF method, to study the electronic and related
properties of transition metal mono-nitrides: ScN and YN. We solved the KS
system of equations self-consistently within the linear combination of atomic
orbitals (LCAO) formalism. It is shown that the band gap and low energy
conduction bands, as well as elastic and structural properties, can be
calculated with a reasonable accuracy when the LCAO formalism is used to obtain
an optimal basis. Our calculated, indirect electronic band gap
(E$^\mathrm{\Gamma-X}_g$) is 0.79 (LDA) and 0.88 eV (GGA) for ScN. In the case
of YN, we predict an indirect band gap (E$^\mathrm{\Gamma-X}_g$) of 1.09 (LDA)
and 1.15 eV (GGA). We also calculated the equilibrium lattice constants, the
bulk moduli (B$_{o}$), effective masses, and elastic constants for both
systems. Our calculated values are in excellent agreement with experimental
ones where the latter are available.
