  We report the electrical injection and detection of spin polarized current in
lateral ferromagnet-nonmagnet-ferromagnet spin valve devices, ferromagnet being
cobalt and nonmagnet being indium (In) or indium oxide (In2O3) nanostructures.
The In nanostructures were grown by depositing pure In on lithographically
pre-patterned structures. In2O3 nanostructures were obtained by oxidation of In
nanostructures. Spin valve devices were fabricated by depositing micro magnets
over the nanostructures with connecting nonmagnetic electrodes via two steps of
e-beam lithography. Clear spin switching behavior was observed in the both
types of spin valve devices measured at 10 K. From the measured spin signal,
the spin relaxation length ({\lambda}N) of In and In2O3 nanostructures were
estimated to be 449.6 nm and 788.6 nm respectively.
