  The intrinsic resistance peak (ridge) structures were recently found to
appear in the carrier density dependence plot of the resistance of the
AB-stacked multilayer graphene with even numbers of layers.The ridges are due
to topological changes in the Fermi surface. Here, these structures were
studied in AB-stacked multilayer graphene with odd numbers of layers (5 and 7
layers) by performing experiments using encapsulated high-quality graphene
samples equipped with top and bottom gate electrodes.The intrinsic resistance
peaks that appeared on maps plotted with respect to the carrier density and
perpendicular electric field showed particular patterns depending on graphene's
crystallographic structure, and were qualitatively different from those of
graphene with even numbers of layers. Numerical calculations of the dispersion
relation and semi-classical resistivity using information based on the Landau
level structure determined by the magnetoresistance oscillations, revealed that
the difference stemmed from the even-odd layer number effect on the electronic
band structure.
