  We observe that in a strongly interacting two-dimensional electron system in
ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side
near the metal-insulator transition increases with decreasing temperature,
reaches a maximum at some temperature, and then decreases by more than one
order of magnitude. We scale the resistivity data in line with expectations for
the transport of strongly correlated Fermi systems and find a nearly perfect
agreement with theory over a wide range of electron densities.
