  Spatially uniform optical excitations can induce Floquet topological band
structures within insulators which can develop similar or equal characteristics
as are known from three-dimensional topological insulators. We derive in this
article theoretically the development of Floquet topological quantum states for
electromagnetically driven semiconductor bulk matter and we present results for
the lifetime of these states and their occupation in the non-equilibrium. The
direct physical impact of the mathematical precision of the Floquet-Keldysh
theory is evident when we solve the driven system of a generalized Hubbard
model with our framework of dynamical mean field theory (DMFT) in the
non-equilibrium for a case of ZnO. The physical consequences of the topological
non-equilibrium effects in our results for correlated systems are explained
with their impact on optoelectronic applications.
