  The electrical and optical properties of flat and planar buckled siligraphene
(SiC) monolayer are examined using a first principles approach. Buckling
between the Si and the C atoms in SiC structures influences and impacts the
properties of the 2D nanomaterial, according to our results. The electron
density of a planar SiC monolayer is calculated, as well as the effects of
buckling on it. According to our findings, a siligraphene monolayer is a
semiconductor nanomaterial with a direct electronic band gap that decreases as
the planar buckling rises. The contributions to the density of states differ
owing to changes in the system's structure. Another explanation is that planar
buckling reduces the sp$^2$ overlapping, breaking the bond symmetry causing it
to become a sp$^3$ bond. We show that increased planar buckling between the Si
and the C atoms alters the monolayer's optical, mechanical, and thermal
properties. A managed planar buckling increases the optical conductivity with a
significant shift in the far visible range, as all optical spectra features are
red shifted, still remaining visible. Instead of a $\sigma\text{-}\sigma$
covalent bond, the sp$^3$ hybridization produces a stronger $\sigma\text{-}\pi$
bond. Optical characteristics such as the dielectric function, the absorbance,
and the optical conductivity of a SiC monolayer are investigated for both
parallel and perpendicular polarization of the incoming electric field for both
flat and planar buckled systems. The findings show that the optical properties
are influenced for both of these two polarizations, with a significant change
in the optical spectrum from the near visible to the far visible. The ability
to manipulate the optical and electrical characteristics of this critical 2D
material through planar buckling opens up new technological possibilities,
especially for optoelectronic devices.
