  We have studied charge injection across the metal/organic semiconductor
interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect
transistors, with Au source and drain electrodes modified by self-assembled
monolayers (SAMs) prior to active polymer deposition. By using the SAM to
engineer the effective Au work function, we markedly affect the charge
injection process. We systematically examine the contact resistivity and
intrinsic channel mobility, and show that chemically increasing the injecting
electrode work function significantly improves hole injection relative to
untreated Au electrodes.
