  The resistivity, temperature, and magnetic field dependence of the anomalous
Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08
is presented. A quadratic dependence of the anomalous Hall resistance on the
resistivity is observed, with a magnitude which is in agreement with Berry
phase theories of the anomalous Hall effect in dilute magnetic semiconductors.
