  Spatially uniform excitations can induce Floquet topological bandstructures
within insulators which have equal characteristics to those of topological
insulators. Going beyond we demonstrate in this article the evolution of
Floquet topological quantum states for electromagnetically driven semiconductor
bulk matter. We show the direct physical impact of the mathematical precision
of the Floquet-Keldysh theory when we solve the driven system of a generalized
Hubbard model with our framework of dynamical mean field theory (DMFT) in the
non-equilibrium. We explain the physical consequences of the topological
non-equilibrium effects in our results for correlated sysems with impact on
optoelectronic applications.
