  Spin defects like the negatively charged boron vacancy color center ($V_B^-$)
in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with
near-surface defects in layered van der Waals heterostructures. Here, we reveal
the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$
color centers in hBN with correlative cathodoluminescence and photoluminescence
microscopies. We observe strong localized enhancement and redshifting of the
$V_B^-$ luminescence at creases, consistent with density functional theory
calculations showing $V_B^-$ migration toward regions with moderate uniaxial
compressive strain. The ability to manipulate these spin defects with highly
localized strain offers intriguing possibilities for future 2D quantum sensors.
