  We consider a two dimensional semiconductor with carriers subject to
spin-orbit interactions and scattered by randomly distributed magnetic
impurities. We solve the time-dependent Schroedinger equation to investigate
the relationship between the geometrical properties of the wavefunction and the
system's spin dependent transport properties. Even in the absence of localized
states, interference effects modify the carrier diffusion, as revealed by the
appearance of power laws dependent on the impurity concentration. For stronger
disorder, we find a localization transition characterized by a fractal
wavefunction and enhanced spin transport.
