  Power dissipation is one of the most important factors limiting the future
miniaturisation of integrated circuits. The capability of controlling magnetic
states with a low voltage through magnetoelectric coupling in
magnetostrictive/piezoelectric systems may pave the way toward ultra low-power
electronics. Although the former effect has been demon-strated in several
multiferroic heterostructures, the incorporation of such complex geometries
into practical magnetic memory and logic nanodevices has been lacking. Here, we
demonstrate the room temperature control of a domain wall gate with an electric
field in a nanowire consisting of a laterally polarized piezoelectric bar
inducing a giant strain in a ferromagnetic spin-valve. We propose to use such
novel domain wall gate as an elementary brick to generate a complete set of
boolean logic functions or stabilize domain walls in high density memory
applications.
