  Possible existence of topologically protected surface in samarium hexaboride
has created a strong need for investigations allowing to distinguish between
properties coming from the surface states and those originating in the
(remaining) bulk. Studies of SmB6 thin films represent a favorable approach
allowing well defined variations of the bulk volume that is not affected by
surface states. Moreover, thin films are highly desirable for potential
technology applications. However, the growth of SmB6 thin films is accompanied
by technology problems, which are typically associated with maintaining the
correct stoichiometry of samarium and boron. Here we present feasibility study
of SmB6 thin film synthesis by pulsed laser deposition (PLD) from a single
stoichiometric SmB6 target. As proved by Rutherford Backscattering Spectrometry
(RBS), we succeeded to obtain the same ratio of samarium and boron in the films
as that in the target. Thin films revealing characteristic electrical
properties of (crystalline) SmB6 were successfully deposited on MgO, sapphire,
and glass-ceramics substrates, when the substrates were kept at temperature of
600$^\circ$ C during the deposition. Performed electrical resistance studies
have revealed that bulk properties of the films are only slightly affected by
the substrate. Our results indicate that PLD is a suitable method for complex
and intensive research of SmB6 and similar systems.
