  The family of materials defined as ZrSiX (X = S, Se, Te) has been established
as Dirac node-line semimetals, and subsequent study is urgent to exploit the
promising application of unusual magnetoresistance property. In this work, we
systematically investigated the anisotropic magnetoresistance in the
newly-discovered Dirac node-line material ZrSiSe. By applying a magnetic field
of 3 T by a vector field, the three-dimensional (3D) magnetoresistance (MR)
shows strong anisotropy. The MR ratio of maximum and minimum directions can
reach 7 at 3 T and keeps increasing at the higher magnetic field. The
anisotropic MR forms a butterfly-shaped curve, which indicates the quasi-2D
electronic structures. This is further confirmed by the angular-dependent
Shubnikov-de Haas (SdH) oscillations. The first-principles calculations
establish the quasi-2D tubular-shaped Fermi surface near the X point in the
Brillouin zone. Our findings shed light on the 3D mapping of MR and the
potential applications in magnetic sensors based on ZrSiSe Dirac materials.
