  We have investigated the effect of twisting on electronic band structure,
effective mass and carrier mobilities of three prototypes of AGNRs (N=6, 7 & 8)
using Density functional theory combined with Deformation potential theory and
Effective mass approximation. It is shown that the influence of twisted modes
electron-phonon interaction is smaller than stretching modes, nonetheless,
twisting has a profound effect on effective mass and mobilities. Similar to
earlier reported conclusion in which the ideal N=3n wide HAGNR potentially
exhibit an electron mobility comparable to intrinsic graphene, we also found
that the ideal N=3n+2 HAGNRs hole mobility reside more closely to intrinsic
graphene which could be increased further through Fluorine passivation. Thus,
the control of the ribbon width along with passivation and extent of
deformation are of paramount importance for determining the n-type or p-type of
ribbons. Also, because of strong response to torsional strain, the N=8 F
passivated AGNRs are the most appropriate for mechanical and high frequency
switching. Our results suggest that twisting a ribbon can be considered as a
good alternative way for controlled manipulation of the band structure and
carrier mobilities for applications in mechanical switching devices.
