  While long-theorized, the direct observation of multiple highly dispersive
C$_{60}$ valence bands has eluded researchers for more than two decades due to
a variety of intrinsic and extrinsic factors. Here we report a realization of
multiple highly dispersive (330-520 meV) valence bands in pure thin film
C$_{60}$ on a novel substrate--the three-dimensional topological insulator
Bi$_{2}$Se$_{3}$--through the use of angle-resolved photoemission spectroscopy
(ARPES) and first-principles calculations. The effects of this novel substrate
reducing C$_{60}$ rotational disorder are discussed. Our results provide
important considerations for past and future band structure studies as well as
the increasingly popular C$_{60}$ electronic device applications, especially
those making use of heterostructures.
