  Novel mechanisms of defect annealing in solids are discussed, which are based
on the large amplitude anharmonic lattice vibrations, a.k.a. intrinsic
localized modes or discrete breathers (DBs). A model for amplification of
defect annealing rate in Ge by low energy plasma-generated DBs is proposed, in
which, based on recent atomistic modelling, it is assumed that DBs can excite
atoms around defects rather strongly, giving them energy $\gg k_BT$ for
$\sim$100 oscillation periods. This is shown to result in the amplification of
the annealing rates proportional to the DB flux, i.e. to the flux of ions (or
energetic atoms) impinging at the Ge surface from inductively coupled plasma
(ICP)
