  An investigation of the selfconsistent ambipolar charge kinetics across a
negatively biased semiconducting plasma-solid interface is presented. For the
specific case of a thin germanium layer with nonpolar electron-phonon
scattering, sandwiched between an Ohmic contact and a collisionless argon
plasma, we calculate the current-voltage characteristic and show that it is
affected by the electron microphysics of the semiconductor. We also obtain the
spatially and energetically resolved fluxes and charge distributions inside the
layer, visualizing thereby the behavior of the charge carriers responsible for
the charge transport. Albeit not quantitative, because of the crude model for
the germanium band structure and the neglect of particle-nonconserving
scattering processes, such as impact ionization and electron-hole
recombination, which at the energies involved cannot be neglected, our results
clearly indicate (i) the current through the interface is carried by rather hot
carriers and (ii) the perfect absorber model, often used for the description of
charge transport across plasma-solid interfaces, cannot be maintained for
semiconducting interfaces.
