  Recently, a wide family of electronic orders was unveiled in graphene flat
bands, such as spin- and valley-polarized phases as well as nematic
momentum-polarized phases, stabilized by exchange interactions via a
generalized Stoner mechanism. Momentum polarization involves orbital degrees of
freedom and is therefore expected to impact resistivity in a way that is
uniquely sensitive to the ordering type. Under pocket polarization, carrier
distribution shifts in $k$ space and samples the band mass in regions defined
by the displaced momentum distribution. This makes transport coefficients
sensitive to pocket polarization, resulting in the Ohmic resistivity decreasing
with temperature. In addition, it leads to current switching and hysteresis
under strong $E$ field. Being robust in the presence of electron-phonon
scattering, this behavior can serve as a telltale sign of pocket polarization
order. The fast timescale and low dissipation of the switching cycle may be
advantageous for highly applicable memory-dependent resistors, i.e.,
memristors.
