  The resistivity, $\rho$ as a function of temperature and ionization energy
(doping) and magnetization respectively is derived with further confinements
from spin-disorder scattering. The computed $T_{crossover}$ below $T_C$ and
carrier density in Ga$_{1-x}$Mn$_x$As system are 8-12 K and 10$^{19}$
cm$^{-3}$, remarkably identical with the experimental values of 10-12 K and
10$^{18}-10^{20}$ cm$^{-3}$ respectively.
