  Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising
alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility,
low leakage power, high density, and fast read speed. The STT-RAM's small
feature size is particularly desirable for the last-level cache (LLC), which
typically consumes a large area of silicon die. However, long write latency and
high write energy still remain challenges of implementing STT-RAMs in the CPU
cache. An increasingly popular method for addressing this challenge involves
trading off the non-volatility for reduced write speed and write energy by
relaxing the STT-RAM's data retention time. However, in order to maximize
energy saving potential, the cache configurations, including STT-RAM's
retention time, must be dynamically adapted to executing applications' variable
memory needs. In this paper, we propose a highly adaptable last level STT-RAM
cache (HALLS) that allows the LLC configurations and retention time to be
adapted to applications' runtime execution requirements. We also propose
low-overhead runtime tuning algorithms to dynamically determine the best
(lowest energy) cache configurations and retention times for executing
applications. Compared to prior work, HALLS reduced the average energy
consumption by 60.57% in a quad-core system, while introducing marginal latency
overhead.
