  Trapped-ion quantum information processors offer many advantages for
achieving high-fidelity operations on a large number of qubits, but current
experiments require bulky external equipment for classical and quantum control
of many ions. We demonstrate the cryogenic operation of an ion-trap that
incorporates monolithically-integrated high-voltage CMOS electronics ($\pm
8\mathrm{V}$ full swing) to generate surface-electrode control potentials
without the need for external, analog voltage sources. A serial bus programs an
array of 16 digital-to-analog converters (DACs) within a single chip that apply
voltages to segmented electrodes on the chip to control ion motion.
Additionally, we present the incorporation of an integrated circuit that uses
an analog switch to reduce voltage noise on trap electrodes due to the
integrated amplifiers by over $50\mathrm{dB}$. We verify the function of our
integrated electronics by performing diagnostics with trapped ions and find
noise and speed performance similar to those we observe using external control
elements.
