  Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor
deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance
semiconducting SWNT field-effect transistors have been fabricated using the
thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance
per channel width is 8900 S/m. The high transconductance cannot be explained by
the increased gate capacitance; it is proposed that the increased electric
field at the nanotube-electrode interface due to the high-kappa SrTiO3
decreases or eliminates the nanotube-electrode Schottky barrier.
