  We characterize a near-infrared single-photon detector based on an InGaAs/InP
avalanche photodiode and the self-differencing post-processing technique. It
operates at gate rates of 200 MHz and higher. The compact, integrated design
employs printed circuit boards and features a semiconductor-based
self-differencing subtraction implemented with a fully differential amplifier.
At a single-photon detection efficiency of 6.4%, the detector has a dark count
probability of 9x10^-7 per gate, an afterpulse probability of 6.3% per
detection event, a detection time jitter of 150 ps, and a dead time of 5 ns
(equivalent to one gate period). Furthermore, it can be operated as a standard
photodiode, which benefits applications that require detecting single photons
as well as strong light signals.
