  We have developed and applied a mobility edge model that takes into account
drift and diffusion currents to characterize the space charge limited current
in organic semiconductors. The numerical solution of the drift-diffusion
equation allows the utilization of asymmetric contacts to describe the built-in
potential within the device. The model has been applied to extract information
of the distribution of traps from experimental current-voltage measurements of
a rubrene single crystal from Krellner et al. [Phys. Rev. B, 75(24), 245115]
showing excellent agreement across several orders of magnitude of current.
Although the two contacts are made of the same metal, an energy offset of 580
meV between them, ascribed to differences in the deposition techniques
(lamination vs. evaporation) was essential to correctly interpret the shape of
the current-voltage characteristics at low voltage. A band mobility 0.13 cm2/Vs
for holes was estimated, which is consistent with transport along the long axis
of the orthorhombic unit cell. The total density of traps deeper than 0.1 eV
was 2.2\times1016 cm-3. The sensitivity analysis and error estimation in the
obtained parameters shows that it is not possible to accurately resolve the
shape of the trap distribution for energies deeper than 0.3 eV or shallower
than 0.1 eV above the valence band edge. The total number of traps deeper than
0.3 eV however can be estimated. Contact asymmetry and the diffusion component
of the current play an important role in the description of the device at low
bias, and are required to obtain reliable information about the distribution of
deep traps.
