  We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm)
Ga(0.95)Mn(0.05)As films. We find that the sign of the AMR can be positive or
negative, which may depend on the direction of the current with respect to the
crystal. At low temperatures, transport measurements and SQUID magnetometry
suggest that the magnetisation has a component pointing out of the plane of the
film.
