  Hematite Fe$_2$O$_3$ seed layers are shown to constitute a pathway to prepare
highly conductive transparent tin-doped indium oxide (ITO) thin films by room
temperature magnetron sputtering. Conductivities of up to $\sigma = 3300\,{\rm
S/cm}$ are observed. The improved conductivity is not restricted to the
interface but related to an enhanced crystallization of the films, which
proceeds in the rhombohedral phase.
