  The non-linear generalization of the Hall effect has recently gained much
attention, with a rapidly growing list of non-centrosymmetric materials that
display higher-order Hall responses under time-reversal invariant conditions.
The intrinsic second-order Hall response arises due to the first-order moment
of Berry curvature -- termed Berry curvature dipole -- which requires broken
inversion and low crystal symmetries. Chiral materials are characterized by
their lack of improper symmetries such as inversion, mirror plane, and
roto-inversion. Owing to this absence of symmetries, in this work, we propose
chiral systems as ideal platforms to study the Berry curvature dipole-induced
non-linear Hall effects. We use state-of-the-art first-principles computations,
in conjunction with symmetry analyses, to explore a variety of chiral material
classes -- metallic \ch{NbSi2}, semiconducting elemental Te, insulating HgS,
and topological multifold semimetal CoSi. We present the emergence and
tunability of the Berry curvature dipole in these chiral materials. In
particular, we demonstrate that the two enantiomeric pairs exhibit an exactly
opposite sign of the Berry curvature dipole. We complement our \textit{ab
initio} findings with a general tight-binding minimal model and give estimates
for non-linear Hall voltages, which are experimentally accessible. Our
predictions put forward chiral materials as an emerging class of materials to
realize non-linear Hall phenomena and highlight an as-yet-unexplored aspect of
these systems.
