  Silicon Carbide (SiC) is an outstanding material, not only for electronic
applications, but also for projected functionalities in the realm of photonic
quantum technologies, nano-mechanical resonators and photonics on-a-chip. For
shaping 3D structures out of SiC wafers, predominantly dry-etching techniques
are used. SiC is nearly inert with respect to wet-etching, occasionally
photoelectrochemical etching strategies have been applied. Here, we propose an
electrochemical etching strategy that solely relies on defining etchable
volumina by implantation of p-dopands. Together with the inertness of the
n-doped regions, very sharp etching contrasts can be achieved. We present
devices as different as monolithic cantilevers, disk-shaped optical resonators
and membranes etched out of a single crystal wafer. The high quality of the
resulting surfaces can even be enhanced by thermal treatment, with shape-stable
devices up to and even beyond 1550{\deg}C. The versatility of our approach
paves the way for new functionalities on SiC as high-performance
multi-functional wafer platform.
