  We present electrical conductance measurements on amorphous NbSi insulating
thin films. These films display out-of equilibrium electronic features that are
markedly different from what has been reported so far in disordered insulators.
Like in the most studied systems (indium oxide and granular Al films), a slow
relaxation of the conductance is observed after a quench to liquid helium
temperature which gives rise to the growth of a memory dip in MOSFET devices.
But unlike in these systems, this memory dip and the related conductance
relaxations are still visible up to room temperature, with clear signatures of
a temperature dependent dynamics.
