  We present an extensive first-principles study of the pressure dependence of
the formation enthalpies of all the know vacancy and self-interstitial
configurations in silicon, in each charge state from -2 through +2. The neutral
vacancy is found to have a formation volume that varies markedly with pressure,
leading to a remarkably large negative value (-0.68 atomic volumes) for the
zero-pressure formation volume of a Frenkel pair (V + I). The interaction of
volume and charge was examined, leading to pressure--Fermi level stability
diagrams of the defects. Finally, we quantify the anisotropic nature of the
lattice relaxation around the neutral defects.
