  Progress in (Ga,Mn)As lithography has recently allowed us to realize
structures where unique magnetic anisotropy properties can be imposed locally
in various regions of a given device. We make use of this technology to
fabricate a device in which we study transport through a constriction
separating two regions whose magnetization direction differs by 90 degrees. We
find that the resistance of the constriction depends on the flow of the
magnetic field lines in the constriction region and demonstrate that such a
structure constitutes a non-volatile memory device.
