  Structures for realizing hole-doped MgB$_2$ without appealing to chemical
substitutions are proposed. These structures which consist of alternating
MgB$_2$ and graphene layers have small excess energy compared to bulk graphite
and MgB$_2$. Density functional theory based first-principles electronic
structure calculations show significant charge transfer from the MgB$_2$ layer
to graphene, resulting in effectively hole-doped MgB$_2$. Substantial
enhancement in the density of states at the Fermi level of the proposed
structure is predicted.
