  Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were
investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films
have been synthesized and characterized as these compounds exhibit interesting
features for the development of spintronics. Here, Mn5(SixGe1-x)3 thin films
were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy.
Crystalline thin films can be produced with controlled Si concentrations
ranging from 0 to 1. The thin films were relaxed by dislocations at the
interface with the substrate. A lattice parameter variation was observed as the
Si content increased, which is comparable to previous works done in bulk.
Reflection highenergy electron diffraction diagrams and X-ray diffraction
profiles showed that lattice parameters a and c are shrinking and that the
surface roughness and crystallinity degrade as the Si amount increases.
Magnetometric measurements revealed a ferromagnetic behavior for all Si
concentrations. The measured average ferromagnetic moment per manganese atom
decreased from 2.33 to 0.05 {\mu}B/Mn atom. No ferro to anti-ferromagnetic
transition was observed contrary to the bulk Mn5(SixGe1-x)3 compound.
