  We have performed a depth-profile analysis of an all-oxide p-n junction diode
n-ZnO/p-NiO using photoemission spectroscopy combined with Ar-ion sputtering.
Systematic core-level shifts were observed during the gradual removal of the
ZnO overlayer, and were interpreted using a simple model based on charge
conservation. Spatial profile of the potential around the interface was
deduced, including the charge-depletion width of 2.3 nm extending on the ZnO
side and the built-in potential of 0.54 eV.
