  Misfit strain in core-shell nanowires can be elastically released by nanowire
bending in case of asymmetric shell growth around the nanowire core. In this
work, we investigate the bending of GaAs nanowires during the asymmetric
overgrowth by an In(x)Ga(1-x)As shell caused by avoiding substrate rotation. We
observe that the nanowire bending direction depends on the nature of the
substrate's oxide layer, demonstrated by Si substrates covered by native and
thermal oxide layers. Further, we follow the bending evolution by time-resolved
in-situ X-ray diffraction measurements during the deposition of the asymmetric
shell. The XRD measurements give insight into the temporal development of the
strain as well as the bending evolution in the core-shell nanowire.
