  As conventional silicon technology is approaching its fundamental material
and physical limits with continuous scaling, there is a growing push to look
for new platform to design memory circuits for nanoelectronic applications. In
this paper we explore new design concept of nonvolatile memory based on
graphene nanotechnology. The investigation focuses on two forms of graphene
based field effect transistor (FET) carbon nanotube FET (CNTFET) and graphene
nanoribbon FET (GNRFET). The analysis reveals that GNRFET with a high trapping
capable oxide layer is suitable for ultra high ensity nonvolatile memory.
