  We show that the performance of pentacene transistors can be significantly
improved by maximizing the interfacial area at single walled carbon nanotube
(SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs
of different densities (0-30/{\mu}m) to the Pd electrodes. The average mobility
is increased three, six and nine times for low, medium and high SWCNT
densities, respectively, compared to the devices with zero SWCNT. The current
on-off ratio and on-current are increased up to 40 times and 20 times with
increasing the SWCNT density. We explain the improved device performance using
reduced barrier height of SWCNT/pentacene interface.
