  We have studied the transport properties of graphene grown on silicon side of
SiC. Samples under study have been prepared by two different growth methods in
two different laboratories. Magnetoresistance and Hall resistance have been
measured at temperatures between 4 and 100 K in resistive magnet in magnetic
fields up to 22 T. In spite of differences in sample preparation, the field
dependence of resistances measured on both sets of samples exhibits two periods
of magneto-oscillations indicating two different parallel conducting channels
with different concentrations of carriers. The semi-quantitative agreement with
the model calculation allows for conclusion that channels are formed by
high-density and low-density Dirac carriers. The coexistence of two different
groups of carriers on the silicon side of SiC was not reported before.
