  PbSe is a low-gap semiconductor with excellent infrared photo-detection
properties. Here we report our high magnetic field and low temperature
electrical properties measurement performed on a moderately doped PbSe single
crystals with p-type bulk carrier density of around $1\times10^{18}$ cm$^{-3}$.
Longitudinal resistance (R$_{xx}$) and Hall resistance (R$_{xy}$) were
simultaneously measured between 0 T--18 T at several temperatures between 0.8
K--25 K. These transport measurements start showing oscillatory behavior around
and above 6 T of magnetic field. The quantum oscillation frequency is ~15 T,
giving an estimate for the carrier density of each L pocket in the BZ
participating in these oscillations. The effective mass of the free carriers is
estimated from the temperature dependence of oscillation amplitudes.
Measurements as the magnetic fields is rotated reveal the magneto-transport
properties of a 3D-like fermi surface. Free carrier scattering rate from the
transport data has been estimated which also gave an estimation of Dingle
temperature in PbSe. Room temperature optical measurements has been conducted
and other optical properties has been estimated. The Drude-Lorentz model fit
has been performed which show a low frequency phonon mode around 45 cm$^{-1}$
and bandgap of around 0.2 eV along with other interband electronic transitions.
Some of the optical and transport results has been compared against other
members of class IV-VI chalcogenides.
