  A systematic study of the impact of annealing on the electronic properties of
single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence
spectra are recorded to trace the evolution of one and the same QD over several
steps of annealing. A substantial reduction of the excitonic fine-structure
splitting upon annealing is observed. In addition, the binding energies of
different excitonic complexes change dramatically. The results are compared to
model calculations within eight-band k.p theory and the configuration
interaction method, suggesting a change of electron and hole wave function
shape and relative position.
