  We present theoretical observations on the topological nature of strained
III-V semiconductors. By $k \cdot p$ perturbation, it can be shown that the
strain-engineered conduction band hosts a Kramers-Weyl node at the $\Gamma$
point. It is theoretically shown a curated strain can create and then tune the
sign of the topological charge. Furthermore, we outline experimental methods
for both the realization and detection of strain-induced topological phase
transitions.
