  We aim to present a comprehensive theoretical investigation of dielectronic
recombination (DR) of the silicon-like isoelectronic sequence and provide DR
and radiative recombination (RR) data that can be used within a generalized
collisional-radiative modelling framework. Total and final-state level-resolved
DR and RR rate coefficients for the ground and metastable initial levels of 16
ions between $\rm{P^{+}}$ and $\rm{Zn^{16+}}$ are determined. We carried out
multi-configurational Breit-Pauli (MCBP) DR calculations for silicon-like ions
in the independent processes, isolated resonance, distorted wave (IPIRDW)
approximation. Both $\Delta n_c =0$ and $\Delta n_c =1$ core excitations are
included using $LS$ and intermediate coupling schemes. Results are presented
for a selected number of ions and compared to all other existing theoretical
and experimental data. The total dielectronic and radiative recombination rate
coefficients for the ground state are presented in tabulated form for easy
implementation into spectral modelling codes. These data can also be accessed
from the Atomic Data and Analysis Structure (ADAS) OPEN-ADAS database. This
work is a part of an assembly of a dielectronic recombination database for the
modelling of dynamic finite-density plasmas.
