  In information technology devices, current-driven state switching is crucial
in various disciplines including spintronics, where the contribution of heating
to the switching mechanism plays an inevitable role. Recently, current-driven
antiferromagnetic order switching has attracted considerable attention due to
its implications for next-generation spintronic devices. Although the switching
mechanisms can be explained by spin dynamics induced by spin torques, some
reports have claimed that demagnetization above the Neel temperature due to
Joule heating is critical for switching. Here we present a systematic method
and an analytical model to quantify the thermal contribution due to Joule
heating in micro-electronic devices, focusing on current-driven octupole
switching in the non-collinear antiferromagnet, Mn3Sn. The results consistently
show that the critical temperature for switching remains relatively constant
above the Neel temperature, while the threshold current density depends on the
choice of substrate and the base temperature. In addition, we provide an
analytical model to calculate the Joule-heating temperature which
quantitatively explains our experimental results. From numerical calculations,
we illustrate the reconfiguration of magnetic orders during cooling from a
demagnetized state of polycrystalline Mn3Sn. This work not only provides deeper
insights into magnetization switching in antiferromagnets, but also a general
guideline for evaluating the Joule-heating temperature excursions in
micro-electronic devices.
