  Electrical spin injection from ferromagnetic $\delta$-MnGa into an (Al,Ga)As
p-i-n light emitting diode (LED) is demonstrated. The $\delta$-MnGa layers show
strong perpendicular magnetocrystalline anisotropy, enabling detection of spin
injection at remanence without an applied magnetic field. The bias and
temperature dependence of the spin injection are found to be qualitatively
similar to Fe-based spin LED devices. A Hanle effect is observed and
demonstrates complete depolarization of spins in the semiconductor in a
transverse magnetic field.
