  Silicon nitride is awell-established material for photonic devices and
integrated circuits. It displays a broad transparency window spanning from the
visible to the mid-IR and waveguides can be manufactured with low losses. An
absence of nonlinear multi-photon absorption in the erbium lightwave
communications band has enabled various nonlinear optic applications in the
past decade. Silicon nitride is a dielectric material whose optical and
mechanical properties strongly depend on the deposition conditions. In
particular, the optical bandgap can be modified with the gas flow ratio during
low-pressure chemical vapor deposition (LPCVD). Here we show that this
parameter can be controlled in a highly reproducible manner, providing an
approach to synthesize the nonlinear Kerr coefficient of the material. This
holistic empirical study provides relevant guidelines to optimize the
properties of LPCVD silicon nitride waveguides for nonlinear optics
applications that rely on the Kerr effect.
