  Room temperature, wavelength non-degenerate ultrafast pump/probe measurements
were performed on GaN and InGaN epilayers and an InGaN multiple quantum well
structure. Carrier relaxation dynamics were investigated as a function of
excitation wavelength and intensity. Spectrally-resolved sub-picosecond
relaxation due to carrier redistribution and QW capture was found to depend
sensitively on the wavelength of pump excitation. Moreover, for pump
intensities above a threshold of 100 microJ/cm2, all samples demonstrated an
additional emission feature arising from stimulated emission (SE). SE is
evidenced as accelerated relaxation (< 10 ps) in the pump-probe data,
fundamentally altering the re-distribution of carriers. Once SE and carrier
redistribution is completed, a slower relaxation of up to 1 ns for GaN and
InGaN epilayers, and 660 ps for the MQW sample, indicates carrier recombination
through spontaneous emission.
