  We have studied electrical transport as a function of carrier density,
temperature and bias in multi-terminal devices consisting of hexagonal boron
nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the
encapsulation with h-BN, we observe metallic behavior and high electron
mobilities. Below $\sim$60 K an increase in the resistance, and non-linear
transport with plateau-like features in the differential resistance are
present, in line with the expected charge density wave (CDW) formation.
Importantly, the critical temperature and the threshold field of the CDW phase
can be controlled through the back-gate.
