  Metamaterial-based absorbers have been extensively investigated in the
terahertz (THz) range with ever increasing performances. In this paper, we
propose an all-dielectric THz absorber based on doped silicon. The unit cell
consists of a silicon cross resonator with an internal cross-shaped air cavity.
Numerical results suggest that the proposed absorber can operate from THz to
mid-infrared, having an average power absorption of >95% between 0.6 and 10
THz. Experimental results using THz time-domain spectroscopy show a good
agreement with simulations. The underlying mechanisms for broadband absorptions
are attributed to the combined effects of multiple cavities modes formed by
silicon resonators and bulk absorption in the substrate, as confirmed by
simulated field patterns. This ultra-wideband absorption is polarization
insensitive and can operate across a wide range of the incident angle. The
proposed absorber can be readily integrated into silicon-based platforms and is
expected to be used in sensing, imaging, energy harvesting and wireless
communications systems.
