  Inspired by the striking similarities between the metal-insulator transitions
in graphite and Si-MOSFET's and the recent attention to charge doping in
carbon-based materials, we have made attempts to fabricate a field-effect
transistor based on graphite. A relatively thick layer of boron nitride turned
out to be able to serve as a gate dielectric. This, however, limits the
achievable electric gate field, which might be the reason for our observation
of no charge-doping effect.
