  In this work, the Effective Phonon Dispersion of $\beta$-
(Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloy is investigated using the Phonon unfolding
formalism. To capture the true randomness of the system, supercells are
designed using the technique of special quasirandom structues. The phonon
unfolding technique is then used to obtain the effective phonon dispersion
(EPD) for aluminium fractions of 18.75 \% and 37.5 \% with respect to gallium
atoms. The impact of disorder on the high frequency and DC dielectric constant
is also investigated. The unfolding procedure was also applied to the dipole
moment where the projection probability was used to obtain the IR spectra of
the disordered system. The calculated properties gives us further insights to
calculate the transport properties in these alloy semiconductors while
capturing the true randomness of the system.
