  In this paper we have created a strain driven single crystal like
ferromagnetic insulating (FMI) state in a PLD grown thin film of low doped
LCMO(X = 0.15)on NGO(100) substrate and make a thorough study of strain effects
on the electric and magnetic transport of this film. We have studied and
compared the FMI state, ferromagnetic transition temperature (TC),
ferromagnetic insulating temperature (TFMI) and the resistivity of the film in
details with bulk single crystals of X=0.18 to 0.22 doping region. We have
found that TFMI and the localisation length of the carriers are increased and
there is also a decrease in the Coulomb gap. The magneto transport behavior of
the film also differs from the bulk single crystals and the magnetoresistance
of the sample is nearly 20 to 75% with the application of the applied field(0
to 10 T) and it falls up to 5 to 40% below a certain temperature and the TC of
the film increases to higher temperature with the increasing field. The film
also shows anisotropic magnetoresistance as large as 20% depending on applied
magnetic field direction.
