  It is shown that recent experiments indicating a metal-insulator transition
in 2D electron systems can be interpreted in terms of a simple model, in which
the resistivity is controlled by scattering at charged hole traps located in
the oxide layer. The gate voltage changes the number of charged traps which
results in a sharp change in the resistivity. The observed exponential
temperature dependence of the resistivity in the metallic phase of the
transition follows from the temperature dependence of the trap occupation
number. The model naturally describes the experimentally observed scaling
properties of the transition and effects of magnetic and electric fields.
