  Mask-based pattern generation is a crucial step in microchip production. The
next-generation extreme-ultraviolet- (EUV) lithography instruments with a
wavelength of \SI{13.5}{\nano\meter} is currently under development. In
principle, this should allow patterning down to a resolution of a few
nanometers in a single exposure. However, there are many technical challenges,
including those due to the very high energy of the photons. Lithography with
metastable atoms has been suggested as a cost-effective, less-complex
alternative to EUV lithography. The great advantage of atom lithography is that
the kinetic energy of an atom is much smaller than that of a photon for a given
wavelength. However, up till now no method has been available for making masks
for atom lithography that can produce arbitrary, high resolution patterns. Here
we present a solution to this problem. First, traditional binary holography is
extended to near-field binary holography, based on Fresnel diffraction. By this
technique, we demonstrate that it is possible to make masks that can generate
arbitrary patterns in a plane in the near field (from the mask) with a
resolution down to the nanometer range using a state of the art metastable
helium source. We compare the flux of this source to that of an established EUV
source (ASML, NXE:3100) and show that patterns can potentially be produced at
comparable speeds. Finally, we present an extension of the grid-based
holography method for a grid of hexagonally shaped subcells. Our method can be
used with any beam that can be modeled as a scalar wave, including other
matter-wave beams such as helium ions, electrons or acoustic waves.
