  The transverse resistivity in thin films of La(0.84)Sr(0.16)MnO(3)
(LSMO)exhibits sharp field-symmetric jumps below Tc. We show that a likely
source of this behavior is the giant planar Hall effect (GPHE) combined with
biaxial magnetic anisotropy. The effect is comparable in magnitude to that
observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially
used in applications such as magnetic sensors and non-volatile memory devices.
