  One of the biggest challenges impeding the progress of Metal-Oxide-Silicon
(MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$
interface which interferes with controllably confining single and few
electrons. In this work we have engineered a low-disorder MOS quantum
double-dot device with critical electron densities, i.e. the lowest electron
density required to support a conducting pathway, approaching critical electron
densities reported in high quality Si/SiGe devices and commensurate with the
lowest critical densities reported in any MOS device. Utilizing a nearby charge
sensor, we show that the device can be tuned to the single-electron regime
where charging energies of $\approx$8 meV are measured in both dots, consistent
with the lithographic size of the dot. Probing a wide voltage range with our
quantum dots and charge sensor, we detect three distinct electron traps,
corresponding to a defect density consistent with the ensemble measured
critical density. Low frequency charge noise measurements at 300 mK indicate a
1/$f$ noise spectrum of 3.4 $\mu$eV/Hz$^{1/2}$ at 1 Hz and magnetospectroscopy
measurements yield a valley splitting of 110$\pm$26 $\mu$eV. This work
demonstrates that reproducible MOS spin qubits are feasible and represents a
platform for scaling to larger qubit systems in MOS.
