  The current-voltage $IV$ characteristics of $SIS$ junctions are calculated in
the framework of a multiband model with an anisotropic effective order
parameter of HTSC. The results of calculations show that the shape of $IV$
characteristic and the density of electron states changes significantly
depending on the parameters of the model. A theoretical explanation is proposed
for the experimentally observed $s$-like behavior of the $IV$ characteristics
of $SIN$ and $SIS$ junctions with BSCCO-type superconductors. The dependence of
the superconducting peaks asymmetry on the mutual arrangement of the bands is
analyzed. The difference between the obtained results and the results of
single-band models with the $s$ and $d$ symmetries of the order parameter is
discussed.
