  This paper discusses free carrier generation by pulsed laser fields as a
mechanism to switch the optical properties of semiconductor photonic crystals
and bulk semiconductors on an ultrafast time scale. Requirements are set for
the switching magnitude, the time-scale, the induced absorption as well as the
spatial homogeneity, in particular for silicon at lambda= 1550 nm. Using a
nonlinear absorption model, we calculate carrier depth profiles and define a
homogeneity length l_hom. Homogeneity length contours are visualized in a plane
spanned by the linear and two-photon absorption coefficients. Such a
generalized homogeneity plot allows us to find optimum switching conditions at
pump frequencies near v/c= 5000 cm^{-1} (lambda= 2000 nm). We discuss the
effect of scattering in photonic crystals on the homogeneity. We experimentally
demonstrate a 10% refractive index switch in bulk silicon within 230 fs with a
lateral homogeneity of more than 30 micrometers. Our results are relevant for
switching of modulators in absence of photonic crystals.
