  We have developed a noncontact method for measurement of the interline
capacitance in Cu/low-k interconnect. It is based on a miniature test vehicle
with net capacitance of a few femto-Farads formed by two 20-\mu m-long parallel
wires (lines) with widths and spacings the same as those of the interconnect
wires of interest. Each line is connected to a small test pad. The vehicle
impedance is measured at 4 GHz by a near-field microwave probe with 10 \mu m
probe size via capacitive coupling of the probe to the vehicle's test pads.
Full 3D finite element modeling at 4 GHz confirms that the microwave radiation
is concentrated between the two wires forming the vehicle. An analytical lumped
element model and a short/open calibration approach have been proposed to
extract the interline capacitance value from the measured data. We have
validated the technique on several test vehicles made with copper and low-k
dielectric on a 300 mm wafer. The vehicles interline spacing ranges from 0.09
to 1 \mu m and a copper line width is 0.15 \mu m. This is the first time a
near-field scanning microwave microscope has been applied to measure the lumped
element impedance of a test vehicle.
