  Barium titanate, BaTiO3 (BT), materials have been synthesized by two
different routes: one ball-mill-derived (BMD) nanopowder and another
precursor-derived (PCD) BT synthesis method were used separately to fabricate
BT thin films on stainless steel (SS) and quartz substrates by spin coating.
Then thin films from both synthesis routes were characterized by
Ultraviolet-Visible-Near Infrared (UV-Vis-NIR) Spectroscopy, Field-Emission
Scanning Electron Microscopy (FE-SEM), X-ray Diffractometry (XRD), Raman
Spectroscopy, and Four-point collinear probe; all carried out at room
temperature. Our studies revealed that the PCD synthesis process did not
produce the BT phase even under the 900^0C air-annealing condition. In
contrast, a homogeneous BT thin film has been formed from the BMD-BT
nanopowder. The optical band gap of BMD-BT thin films was found in the 3.10 -
3.28 eV range. Finally, a Graphene-Barium Titanate-Graphene (G-BT-G) structure
was fabricated on a SS substrate by spin coating at processing temperatures
below 100^0C and characterized by two different pieces of equipment: a
Potentiostat/Galvanostat (PG-STAT) and a Precision Impedance Analyzer (PIA).
The G-BT-G structure exhibited a capacitance of 8 nF and 7.15 nF, a highest
dielectric constant of 800 and 790, and a low dielectric loss of 4.5 and 5,
investigated by PG-STAT and PIA equipment, respectively.
