  We report on the illustration of the first electron blocking layer (EBL) free
AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet
(DUV) wavelength region (sub-250 nm). We have systematically analyzed the
results using APSYS software and compared with simulated AlGaN nanowire DUV
LEDs. From the simulation results, significant efficiency droop was observed in
AlGaN based devices, attributed to the significant electron leakage. However,
compared to AlGaN nanowire DUV LEDs at similar emission wavelength, the
proposed single quantum well (SQW) AlInN based light-emitters offer higher
internal quantum efficiency without droop up to current density of 1500 A/cm2
and high output optical power. Moreover, we find that transverse magnetic
polarized emission is ~ 5 orders stronger than transverse electric polarized
emission at 238 nm wavelength. Further research shows that the performance of
the AlInN DUV nanowire LEDs decreases with multiple QWs in the active region
due to the presence of the non-uniform carrier distribution in the active
region. This study provides important insights on the design of new type of
high performance AlInN nanowire DUV LEDs, by replacing currently used AlGaN
semiconductors.
