  A microscopic theory for the generation and propagation of coherent LA
phonons in pseudomorphically strained wurzite (0001) InGaN/GaN multi-quantum
well (MQW) p-i-n diodes is presented. The generation of coherent LA phonons is
driven by photoexcitation of electron-hole pairs by an ultrafast Gaussian pump
laser and is treated theoretically using the density matrix formalism. We use
realistic wurzite bandstructures taking valence-band mixing and strain-induced
piezo- electric fields into account. In addition, the many-body Coulomb
ineraction is treated in the screened time-dependent Hartree-Fock
approximation. We find that under typical experimental conditions, our
microscopic theory can be simplified and mapped onto a loaded string problem
which can be easily solved.
