  Tungsten diselenide, WSe2 shows excellent properties and become very
promising material among two dimensional semiconductors. Wide band gap and
large spin-orbit coupling along with naturally lacking inversion symmetry in
the monolayer WSe2 make it efficient material for spintronics, optoelectronics
and valleytronics applications. In this work, we report electrical transport
properties of monolayer WSe2 based field effect transistor with most needed
multilayer Co/Pt ferromagnetic electrodes exhibiting perpendicular magnetic
anisotropy. We studied contacts behaviour by performing I-V curve measurements
and estimating Schottky barrier heights (SBHs). SBHs estimated from
experimental data are found to be comparatively small, without using any tunnel
barrier. This work expands the current understanding of WSe2 based devices and
gives insight into the electrical behaviour of Co/Pt metal contacts, which can
open great possibilities for spintronic/valleytronic applications.
