  Adding sufficient tensile strain to Ge can turn the material to a direct
bandgap group IV semiconductor emitting in the mid-infrared wavelength range.
However, highly strained-Ge cannot be directly grown on Si due to its large
lattice mismatch. In this work, we have developed a process based on Ge
micro-bridge strain redistribution intentionally landed to the Si substrate.
Traction arms can be then partially etched to keep only localized strained-Ge
micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were
demonstrated bonded on Si. Our approach allows to envision integrated
strained-Ge on Si platform for mid-infrared integrated optics.
