  We numerically investigate the effects of disorder on the quantum Hall effect
(QHE) and the quantum phase transitions in silicene based on a lattice model.
It is shown that for a clean sample, silicene exhibits an unconventional QHE
near the band center, with plateaus developing at $\nu=0,\pm2,\pm6,\ldots,$ and
a conventional QHE near the band edges. In the presence of disorder, the Hall
plateaus can be destroyed through the float-up of extended levels toward the
band center, in which higher plateaus disappear first. However, the center
$\nu=0$ Hall plateau is more sensitive to disorder and disappears at a
relatively weak disorder strength. Moreover, the combination of an electric
field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase
transitions from a topological insulator to a band insulator at the charge
neutrality point (CNP), accompanied by additional quantum Hall conductivity
plateaus.
