  Magnetic insulators with strong perpendicular magnetic anisotropy (PMA) play
a key role in exploring pure spin current phenomena and developing
ultralow-dissipation spintronic devices, thereby it is highly desirable to
develop new material platforms. Here we report epitaxial growth of
La2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with different
crystalline orientations fabricated by sequential two-target ablation process
using pulsed laser deposition. The LSMIO films exhibit high crystalline quality
with homogeneous mixture of LSMO and SIO at atomic level. Ferrimagnetic and
insulating transport characteristics are observed, with the
temperature-dependent electric resistivity well fitted by Mott
variable-range-hopping model. Moreover, the LSMIO films show strong PMA.
Through further constructing all perovskite oxide heterostructures of the
ferrimagnetic insulator LSMIO and a strong spin-orbital coupled SIO layer,
pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Hall
effect (SH-AHE) were observed. These results illustrate the potential
application of the ferrimagnetic insulator LSMIO in developing all-oxide
ultralow-dissipation spintronic devices.
