  We study transport properties of a single electron transistor based on
elastic nanotube. Assuming that an external compressive force is applied to the
nanotube, we focus on the vicinity of the Euler buckling instability. We
demonstrate that in this regime the transport through the transistor is
extremely sensitive to elastic disorder. In particular, built-in curvature
(random or regular) leads to the ``elastic curvature blockade'': appearance of
threshold bias voltage in the $I$-$V$ curve which can be larger than the
Coulomb-blockade-induced one. In the case of a random curvature, an additional
plateau in dependence of the average current on a bias voltage appears.
