  Controlling the stacking of van der Waals (vdW) materials is found to produce
exciting new findings, since hetero- or homo- structures have added the diverse
possibility of assembly and manipulated functionalities. However, so far, the
homostructure with a twisted angle based on the magnetic vdW materials remains
unexplored. Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junction
with broken crystalline symmetry. A clean and metallic vdW junction is
evidenced by the temperature-dependent resistance and the linear I-V curve.
Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed in
the magnetotransport of our homojunction due to the antiparallel magnetic
configurations of the two FGT layers. The PMR ratio is found to be ~0.05% and
gets monotonically enhanced as temperature decreases like a metallic giant
magnetoresistance (GMR). Such a tiny PMR ratio is at least three orders of
magnitude smaller than the tunneling magnetoresistance (TMR) ratio, justifying
our clean metallic junction without a spacer. Our findings demonstrate the
feasibility of the controllable homostructure and shed light on future
spintronics using magnetic vdW materials.
