  Recently developed processes have enabled bottom-up chemical synthesis of
graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal
candidates for electronic devices because of their uniformity, extremely narrow
width below 1 nm, atomically perfect edge structure, and desirable electronic
properties. Here, we demonstrate nanoscale chemically synthesized GNR
field-effect transistors, made possible by development of a new layer transfer
process. We observe strong environmental sensitivity and unique transport
behavior characteristic of sub-1nm width GNRs.
