  Precise lattice parameter measurements in single crystals are achievable, in
principle, by X-ray multiple diffraction (MD) experiments. Tiny sample
misalignments can compromise systematic usage of MD in studies where accuracy
is an important issue. In this work, theoretical treatment and experimental
methods for correcting residual misalignment errors are presented and applied
to probe the induced strain of buried InAs quantum dots on GaAs (001)
substrates.
