  Quasi-static transport measurements are employed to characterize a few
electron quantum dot electrostatically defined in a GaAs/AlGaAs
heterostructure. The gate geometry allows observations on one and the same
electron droplet within a wide range of coupling strengths to the leads. The
weak coupling regime is described by discrete quantum states. At strong
interaction with the leads Kondo phenomena are observed as a function of a
magnetic field. By varying gate voltages the electron droplet can, in addition,
be distorted into a double quantum dot with a strong interdot tunnel coupling
while keeping track of the number of trapped electrons.
