  This paper reports the effect of Ag-doping on electrical properties of
a-Sb2Se3 in the temperature range 240-340 K and frequency range 5 Hz to 100
kHz. The variation of transport properties with thermal doping has been
studied. Ag-doping produced two homogeneous phases in the sample and which are
found to be voltage dependent in the temperature range studied and frequency
dependent in lower frequency region (0.1 - 10 kHz). Activation energy Eg and C'
[=$\sigma_0$ exp ($\gamma$/k), where $\gamma$, is the temperature coefficient
of the band gap] calculated from dc conductivity has been found to vary from
0.42 eV to 0.26 eV and 41.08x10$^-6$ to 2.902x10-6 $\ohm^{-1}$cm$^{-1}$
respectively. Ag-doping can be used to make the sample more useful in device
applications.
