  The deposition of boron-doped amorphous carbon thin films on SiO2 substrate
was achieved via a focused ion beam-assisted chemical vapor deposition of
triphenyl borane (C18H15B) and triphenyl borate (C18H15BO3). The existence of
boron in the deposited film from triphenyl borane, with a precursor temperature
of 90 {\deg}C, was confirmed by a core level X-ray photoelectron spectroscopy
analysis. The film exhibited a semiconducting behavior with a band gap of 285
meV. Although the band gap was decreased to 197 meV after an annealing process,
the film was still semiconductor. Additionally, a drastic reduction of the
resistance on the deposited film by applying pressures was observed from an
in-situ electrical transport measurements using a diamond anvil cell.
