  The sharp Dirac cone of the electronic dispersion confers to graphene a
remarkable sensitivity to strain. It is usually encoded in scalar and
pseudo-vector potentials, induced by the modification of hopping parameters,
which have given rise to new phenomena at the nanoscale such as giant
pseudomagnetic fields and valley polarization. Here, we unveil the effect of
these potentials on the quantum transport across a succession of strain-induced
barriers. We use high-mobility, hBN-encapsulated graphene, transferred over a
large (10x10 $\mu$m$^{2}$) crenellated hBN substrate. We show the emergence of
a broad resistance ancillary peak at positive energy that arises from Klein
tunneling barriers induced by the tensile strain at the trench edges. Our
theoretical study, in quantitative agreement with experiment, highlights the
balanced contributions of strain-induced scalar and pseudo-vector potentials on
ballistic transport. Our results establish crenellated van der Waals
heterostructures as a promising platform for strain engineering in view of
applications and basic physics.
