  We have studied the growth dynamics and electronic properties of SrTiO3-d
homoepitaxial films by pulsed laser deposition. We find the two dominant
factors determining the growth mode are the kinetics of surface crystallization
and oxidation. When matched, persistent two-dimensional layer-by-layer growth
can be obtained for hundreds of unit cells. By tuning these kinetic factors,
oxygen vacancies can be frozen in the film, allowing controlled, systematic
doping across a metal-insulator transition. Metallic films can be grown,
exhibiting Hall mobilities as high as 25,000 cm2/Vs.
