  A physics-based model for the surface potential and drain current for
monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET)
is presented. Taking into account the 2D density-of-states of the atomic layer
thick TMD and its impact on the quantum capacitance, a model for the surface
potential is presented. Next, considering a drift-diffusion mechanism for the
carrier transport along the monolayer TMD, an explicit expression for the drain
current has been derived. The model has been benchmarked with a measured
prototype transistor. Based on the proposed model, the device design window
targeting low-power applications is discussed.
