  We report the fabrication of back-gated field-effect transistors (FETs) using
ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and
possess a high gate modulation, with On/Off ratios larger than 106. The devices
show asymmetric characteristics upon swapping the source and drain, a finding
explained by the presence of Schottky barriers at the metal contact/MoSe2
interface. Using four-point, back-gated devices we measure the intrinsic
conductivity and mobility of MoSe2 as a function of gate bias, and temperature.
Samples with a room temperature mobility of ~50 cm2/V.s show a strong
temperature dependence, suggesting phonons are a dominant scattering mechanism.
