  The proper understanding of semiconductor devices begins at the
metal-semiconductor interface. The metal/semiconductor interface itself can
also be an important device, as Schottky junctions often forms when the doping
in the semiconductors is low. Here, we extend the analysis of metal-silicon
Schottky junctions by using graphene, an atomically thin semimetal. We show
that a fundamentally new transport model is needed to describe the
graphene-silicon Schottky junction. While the current-voltage behavior follows
the celebrated ideal diode behavior, the details of the diode characteristics
is best characterized by the Landauer transport formalism, suggesting that the
injection rate from graphene ultimately determines the transport properties of
this new Schottky junction.
