  The AB-stacked bilayer graphene (BLG) is a pure semiconductor whose band gap
and properties can be tuned by various methods such as doping or applying gate
voltage. Here we show an alternative method to control the electronic
properties of BLG; intercalation of transition metal atoms between the two
monolayers graphene (MLG). A theoretical investigation has been performed on
two-dimensional MLG, BLG, BLG-intercalated nanostructured materials, all of
which are energetically stable. Our study reveals that only MLG and
BLG-intercalated with one Vanadium (V) atom (BLG-1V) materials have a Dirac
Cone at the K-point. This study reveals a new strategy to control the material
properties of BLG to exhibit various behaviors, including: metallic,
semi-metallic, and semiconducting by varying the concentration and spin
arrangement of the V atoms in BLG. In all the cases, the present DFT
calculations show that the 2p$_z$ sub-shells of C atoms in graphene and the
3d$_{yz}$ sub-shells of the V atoms provide the electron density near the Fermi
level controlling the material properties of the BLG-intercalated materials.
Thus we prove that out-of-plane atoms can influence in plane electronic
densities in BLG.
