  We estimate the strength of current-induced magnetic field (CIMF) in the
two-dimensional slab geometry for Spin Hall Effect (SHE) observed recently by
Kato et al. and Wunderlich et al. and show that if the factor gm^*/m, where g
is the Lande factor and m^* and m are effective and pure masses, respectively,
is equal to the numerical value at the surface of the semiconductor, then the
CIMF can describe the SHE.
