  We report an investigation of temperature- and doping-dependent
thermoelectric behaviors of topological semimetal Cd3As2. The electrical
conductivity, thermal conductivity, Seebeck coefficient, and figure of merit
(ZT) are calculated by using Boltzmann transport theory. The calculated
thermoelectric properties of the pristine Cd3As2 match well the experimental
results. The electron or hole doping, especially the latter, is found improving
much the thermoelectric behaviors of the material. The optimum merit ZT of
Cd3As2 with electron doping is found to be about 0.5 at T=700 K with n=1x1020
cm-3, much larger than the maximum experimental value obtained for the pristine
Cd3As2 (~0.15). For the p-type Cd3As2, the maximal value of the Seebeck
coefficient as a function of temperature increases apparently with the increase
of the hole doping concentration and its position shifts drastically towards
the lower temperature region compared to that of the n-type Cd3As2, leading to
the optimum merit ZT of about 0.5 obtained at low temperature of 500K (p=1x1020
cm-3) in the p-type Cd3As2.
