  Time-resolved, pulsed excitation methods are widely used to deduce
optoelectronic properties of semiconductors, including now also Halide
Perovskites (HaPs), especially transport properties. Howev-er, as yet no
evaluation of their amenability and justification for the use of the results
for the above-noted purposes has been reported. To check if we can learn from
pulsed measurement results about steady-state phototransport properties, we
show here that, although pulsed measurements can be useful to extract
information on the recombination kinetics of HaPs, great care should be taken.
One issue is that no changes in the material are induced during or as a result
of the excitation, and another one concerns in how far pulsed
excitation-derived data can be used to find relevant steady-state pa-rameters.
To answer the latter question, we revisited pulsed excitation, and propose a
novel way to compare between pulsed and steady state measurements at different
excitation intensities. We per-formed steady-state photoconductivity and
ambipolar diffusion length measurements, as well as pulsed TR-MC and TR-PL
measurements as function of excitation intensity on the same samples of
dif-ferent MAPbI3 thin films, and find good quasi-quantitative agreement
between the results, explaining them with a generalized single level
recombination model that describes the basic physics of photo-transport of HaP
absorbers. Moreover, we find the first experimental manifestation of the
boundaries between several effective recombination regimes that exist in HaPs,
by analyzing their phototransport behavior as a function of excitation
intensity.
