  The $\mathrm{Co_2}$ family of ferromagnetic Heusler alloys have attracted
interest due to their fully spin-polarized nature, making them ideal for
applications in spintronic devices. More recently, the existence of room
temperature time-reversal-breaking Weyl nodes near the Fermi level was
predicted and confirmed in these systems. As a result of the presence of these
Weyl nodes, these systems possess a non-zero momentum space Berry curvature
that can dramatically influence transport properties such as the anomalous Hall
effect. One of these candidate compounds is $\mathrm{Co_2 Ti Ge}$. Recently,
high quality molecular beam epitaxy-grown thin films of $\mathrm{Co_2 Ti Ge}$
have become available. In this work, we present THz-range measurement of
MBE-grown $\mathrm{Co_2 Ti Ge}$ films. We measure the THz-range Faraday
rotation, which can be understood as a measure of the anomalous Hall effect. We
supplement this work with electronic band structure calculations showing that
the principal contribution to the anomalous Hall effect in the this material
stems from the Berry curvature of the material. Our work shows that this class
of Heusler materials shows promise for Weyl semimetal based spintronics.
