  We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)
with ultra-thin MgO tunnel barrier layers to investigate the relationship
between the spin-transfer torque and the tunnel magnetoresistance (TMR) under
finite bias. We find that the spin torque per unit current exerted on the free
layer decreases by less than 10% over a bias range where the TMR decreases by
over 40%. We examine the implications of this result for various spin-polarized
tunneling models and find that it is consistent with magnetic-state-dependent
effective tunnel decay lengths.
