  The fabrication of bismuthene on top of SiC paved the way for substrate
engineering of room temperature quantum spin Hall insulators made of group V
atoms. We perform large-scale quantum transport calculations in these 2d
materials to analyse the rich phenomenology that arises from the interplay
between topology, disorder, valley and spin degrees of freedom. For this
purpose, we consider a minimal multi-orbital real-space tight-binding
hamiltonian and use a Chebyshev polynomial expansion technique. We discuss how
the quantum spin Hall states are affected by disorder, sublattice resolved
potential and Rashba spin-orbit coupling.
