  Electric field-induced giant resistive switching triggered by
insulator-to-metal transition (IMT) is one of the promising approaches for
developing a new class of electronics often referred to as Mottronics.
Achieving this resistive switching by minimal external field at room
temperature is of paramount research and technological interest. Mott-IMT is
often associated with structural modification, which is very important for
optoelectronic and actuator applications. Here, we report a giant resistive
switching of about 900 % at room temperature in disordered polycrystalline
V2O3-Si thin film stabilized at the IMT phase boundary and associated
structural transformation under a small electric field. The increase of
electron population in the a1g band under the field is responsible for the Mott
gap collapse that drives the structural transition. Furthermore, we also
fabricated a room temperature Mott-FET with a channel ON/OFF resistive ratio of
about 15. This study provides a fundamental mechanism of the Mott-IMT in V2O3
as well as its device applications.
