  Spintronic logic devices require efficient spin-charge interconversion:
converting charge current to spin current and spin current to charge current.
In spin-orbit materials that are regarded as the most promising candidate for
spintronic logic devices, one mechanism that is responsible for spin-charge
interconversion is Edelstein and inverse Edelstein effects based on
spin-momentum locking in materials with Rashba-type spin-orbit coupling. Over
last decade, there has been rapid progresses for increasing interconversion
efficiencies due to the Edelstein effect in a few Rashba-Dresselhaus materials
and topological insulators, making Rashba spin-momentum locking a promising
technological solution for spin-orbit logic devices. However, despite the rapid
progress that leads to high spin-charge interconversion efficiency at cryogenic
temperatures, the room-temperature efficiency needed for technological
applications is still low. This paper presents our understanding on the
challenges and opportunities in searching for Rashba-Dresselhaus materials for
efficient spin-charge interconversion at room temperature by focusing on
materials properties such as Rashba coefficients, momentum relaxation times,
spin-momentum locking relations and electrical conductivities.
