  To achieve the physics goals of future colliders, it is necessary to develop
novel, radiation-hard silicon sensors for their tracking detectors. We target
the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel
Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have
designed, manufactured and tested the MALTA series of sensors, which are DMAPS
in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well
below current hybrid pixel detectors, high time resolution (< 2 ns) and
excellent charge collection efficiency across pixel geometries. These sensors
have a total silicon thickness of between 50-300 $\mu$m, implying reduced
material budgets and multiple scattering rates for future detectors which
utilize such technology. Furthermore, their monolithic design bypasses the
costly stage of bump-bonding in hybrid sensors and can substantially reduce
detector costs. This contribution presents the latest results from
characterization studies of the MALTA2 sensors, including results demonstrating
the radiation tolerance of these sensors.
