  The diffusion of Ga and N adatoms has been studied for the technologically
relevant wurtzite (000bar1) and (0001) surfaces employing density-functional
theory. Our calculations reveal a very different diffusivity for Ga and N
adatoms on the equilibrium surfaces: While Ga is very mobile at typical growth
temperatures, the diffusion of N is by orders of magnitudes slower. These
results give a very detailed insight of how and under which growth conditions N
adatoms can be stabilized and efficiently incorporated at the surface. We
further find that the presence of excess N strongly increases the Ga diffusion
barrier and discuss the consequences for the growth of GaN.
