  Controlling decoherence is the most challenging task in realizing quantum
information hardware. Single electron spins in gallium arsenide are a leading
candidate among solid- state implementations, however strong coupling to
nuclear spins in the substrate hinders this approach. To realize spin qubits in
a nuclear-spin-free system, intensive studies based on group-IV semiconductor
are being pursued. In this case, the challenge is primarily control of
materials and interfaces, and device nanofabrication. We report important steps
toward implementing spin qubits in a predominantly nuclear-spin-free system by
demonstrating state preparation, pulsed gate control, and charge-sensing spin
readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast
gating, we measure T1 spin relaxation times in coupled quantum dots approaching
1 ms, increasing with lower magnetic field, consistent with a spin-orbit
mechanism that is usually masked by hyperfine contributions.
