  The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D)
counterpart of the integer quantum Hall effect (QHE),exhibited only by
two-dimensional (2D) electron systems. It has recently been observed in layered
materials, consisting of stacks of weakly coupled 2D platelets that are yet
characterized by a 3D anisotropic Fermi surface. However, it is predicted that
the quasi-quantized 3D version of the 2D QHE should occur in a much broader
class of bulk materials, regardless of the underlying crystal structure. Here,
we compare the observation of quasi-quantized plateau-like features in the Hall
conductivity of then-type bulk semiconductor InAs with the predictions for the
3D QQHE in presence of parabolic electron bands. InAs takes form of a cubic
crystal without any low-dimensional substructure. The onset of the plateau-like
feature in the Hall conductivity scales with $\sqrt{2/3}k_{F}^{z}/\pi$ in units
of the conductance quantum and is accompanied by a Shubnikov-de Haas minimum in
the longitudinal resistivity, consistent wit the results of calculations. This
confirms the suggestion that the 3D QQHE may be a generic effect directly
observable in materials with small Fermi surfaces, placed in sufficiently
strong magnetic fields
