  We report on electrical spin injection measurements on MWNTs . We use a
ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to
obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield
of device resistances below 100 $k\Omega$, at 300 $K$, is around 50%. We
measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization
reversal of the ferromagnetic leads. The relative difference between the
resistance in the antiparallel (AP) orientation and the parallel (P)
orientation is about 2%.
