  In recent years, a lot of scientific research effort has been put forth for
the investigation of Transition Metal Dichalcogenides (TMDC) and other Two
Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical
investigation on the physical aspects of these materials has revealed a whole
new range of exciting applications due to wide tunability in electronic and
optoelectronic properties. Besides theoretical exploration, these materials
have been successfully implemented in electronic and optoelectronic devices
with promising results. In this work, we have investigated the effect of
monolayer TMDC materials and monolayer TMDC alloys on the performance of a
promising electronic device that can achieve steep switching characteristics-
thin Tunneling Filed Effect Transistor or thin-TFET, using self-consistent
determination of conduction, valance band levels in the device and a simplified
model of interlayer tunneling current that treats scattering semi-classically
and incorporates the energy broadening effect using a Gaussian approximation.
We have also explored the effect of gate dielectric material variation,
interlayer material variation on the performance of the device.
