  Strong damping-like spin-orbit torque ({\tau}DL) has great potential for
enabling ultrafast energy-efficient magnetic memories, oscillators, and logic.
So far, the reported {\tau}DL exerted on a thin-film magnet must result from an
externally generated spin current or from an internal non-equilibrium spin
polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the
first time demonstrate a very strong, unexpected {\tau}DL from current flow
within ferromagnetic single layers of chemically disordered,
face-centered-cubic CoPt. We establish that the novel {\tau}DL is a bulk
effect, with the strength per unit current density increasing monotonically
with the CoPt thickness, and is insensitive to the presence or absence of spin
sinks at the CoPt surfaces. This {\tau}DL most likely arises from a net
transverse spin polarization associated with a strong spin Hall effect (SHE),
while there is no detectable long-range asymmetry in the material. These
results broaden the scope of spin-orbitronics and provide a novel avenue for
developing single-layer-based spin-torque memory, oscillator, and logic
technologies.
