  We present a model for a negative magnetoresistance (MR) that would develop
in a material with many ferromagnetic domains even if the individual domains
have no magnetoresistance and even if there is no boundary resistance. The
negative MR is due to a classical current-distortion effect arising from
spatial variations in the Hall conductivity, combined with a change in domain
structure due to an applied magnetic field. The negative MR can exceed 1000% if
the product of the carrier relaxation time and the internal magnetic field due
to spontaneous magnetization is sufficiently large.
