  Co islands grown on Cu(111) with a stacking fault at the interface present a
conductance in the empty electronic states larger than the Co islands that
follow the stacking sequence of the Cu substrate. Electrons can be more easily
injected into these faulted interfaces, providing a way to enhance transmission
in future spintronic devices. The electronic states associated to the stacking
fault are visualized by tunneling spectroscopy and its origin is identified by
band structure calculations.
