  Diffusion limited reactions of point defects were investigated in amorphous
SiO2 exposed to UV laser light. Electron spin resonance and in situ absorption
measurements at room temperature evidenced the annealing of E' centers and the
growth of H(II) centers both occurring in the post-irradiation stage and
lasting a few hours. These transients are caused by reactions involving
molecular hydrogen H2, made available by dimerization of radiolytic H0.
