  Angular magnetoresistance oscillations (AMRO) were originally discovered in
organic conductors and then found in many other layered metals. It should be
possible to observe AMRO to semiconducting bilayers as well. Here we present an
intuitive geometrical interpretation of AMRO as the Aharonov-Bohm interference
effect, both in real and momentum spaces, for balanced and imbalanced bilayers.
Applications to the experiments with bilayers in tilted magnetic fields in the
metallic state are discussed. We speculate that AMRO may be also observed when
each layer of the bilayer is in the composite-fermion state.
