  The anomalous Nernst effect (ANE) is a member of the extensive family of
topological effects in solid state physics. It converts a heat current into
electric voltage and originates from the Berry curvature of electronic bands
near the Fermi level. Recent results established the Fe$_3$Ga alloy as one of
the most promising candidates for applications, due to its flat band structure
consisting of rich web of nodal lines. In this theoretical work, we study the
effect of deformation of Fe$_3$Ga on the anomalous Nernst effect, which
naturally occurs in thin films. Furthermore, we demonstrate that doping, which
effectively shifts the position of the Fermi level, can also significantly
modify the strength of the effect. Lastly, we provide detailed analysis of the
origin of ANE in the electronic structure of Fe$_3$Ga which yields a deeper
insight into the generating mechanisms, understanding of which can lead to
substantial enhancement of the effect in the future.
