  We report the growth of noncollinear antiferromagnetic (AFM)
Mn$_3$Ni$_{0.35}$Cu$_{0.65}$N films and the orientation-dependent anomalous
Hall effect (AHE) of (001) and (111) films due to nonzero Berry curvature. We
found that post-annealing at 500$^\circ$C can significantly improve the AHE
signals, though using the appropriate post-annealing conditions is important.
The AHE and magnetization loops show sharp flipping at the coercive field in
(111) films, while (001) films are hard to saturate by a magnetic field. The
anomalous Hall conductivity of (111) films is an order of magnitude larger than
that of (001) films. The present results provide not only a better
understanding of the AHE in Mn$_3X$N systems but also further opportunities to
study the unique phenomena related to noncollinear AFM.
