  The valley degree of freedom in 2D materials can be manipulated for
low-dissipation quantum electronics called valleytronics. At the boundary
between two regions of bilayer graphene with different atomic or electrostatic
configuration, valley-polarized current has been realized. However, the
demanding fabrication and operation requirements limit device reproducibility
and scalability toward more advanced valleytronics circuits. We demonstrate a
new device architecture of a point junction where a valley-chiral 0D PN
junction is easily configured, switchable, and capable of carrying valley
current with an estimated polarization of ~80%. This work provides a new
building block in manipulating valley quantum numbers and scalable
valleytronics.
