  Recent progress in theoretical understanding of magnetic anisotropy and
stiffness in III-V magnetic semiconductors is exploited for predictions of
magnetic domain characteristics and methods of their tuning. We evaluate the
width and the energy of domain walls as well as the period of stripe domains in
perpendicular films. The computed stripe width d = 1.1 um for
Ga_0.957Mn_0.043As/In_0.16Ga_0.84As compares favorably to the experimental
value 1.5 um, as determined by Shono et al. [Appl. Phys. Lett. 77, 1363
(2000)].
