  We report on an extensive structural and electrical characterization of
under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer
Deposition (ALD). We elaborate the ALD growth window for these oxides, finding
that the 40-100 nm thick layers of both oxides exhibit fine surface flatness
and required amorphous structure. These layers constitute a base for further
metallic gate evaporation to complete the Metal-Insulator-Semiconductor
structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the
leakage current staying below the state-of-the-art level of 1 nA. At these
conditions the displaced charge corresponds to a change of the sheet carrier
density of 3 \times 1013 cm-2, what promises an effective modulation of the
micromagnetic properties in diluted ferromagnetic semiconductors.
