  Semiconducting nanowires (NWs) are a versatile, highly tunable material
platform at the heart of many new developments in nanoscale and quantum
physics. Here, we demonstrate charge pumping, i.e., the controlled transport of
individual electrons through an InAs NW quantum dot (QD) device at frequencies
up to $1.3\,$GHz. The QD is induced electrostatically in the NW by a series of
local bottom gates in a state of the art device geometry. A periodic modulation
of a single gate is enough to obtain a dc current proportional to the frequency
of the modulation. The dc bias, the modulation amplitude and the gate voltages
on the local gates can be used to control the number of charges conveyed per
cycle. Charge pumping in InAs NWs is relevant not only in metrology as a
current standard, but also opens up the opportunity to investigate a variety of
exotic states of matter, e.g. Majorana modes, by single electron spectroscopy
and correlation experiments.
