  We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum
wells from surface states. We show that this method is as efficient as usual
modulation doping with nitrogen acceptors, and leads to hole densities
exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface doping was successfully applied
to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well.
The observed temperature dependence of photoluminescence spectra, and the
critical temperature, correspond well to those previously reported for
ferromagnetic quantum wells doped with nitrogen.
