  Layered transition metal dichalcogenides (TMDCs) host a variety of strongly
bound exciton complexes that control the optical properties in these materials.
Apart from spin and valley, layer index provides an additional degree of
freedom in a few-layer thick film. Here we show that in a few-layer TMDC film,
the wavefunctions of the conduction and valence band edge states contributing
to the K (K') valley are spatially confined in the alternate layers - giving
rise to direct (quasi-)intra-layer bright exciton and lower-energy inter-layer
dark excitons. Depending on the spin and valley configuration, the bright
exciton state is further found to be a coherent superposition of two
layer-induced states, one (E-type) distributed in the even layers and the other
(O-type) in the odd layers. The intra-layer nature of the bright exciton
manifests as a relatively weak dependence of the exciton binding energy on the
thickness of the few-layer film, and the binding energy is maintained up to 50
meV in the bulk limit - which is an order of magnitude higher than conventional
semiconductors. Fast stokes energy transfer from the intra-layer bright state
to the inter-layer dark states provides a clear signature in the
layer-dependent broadening of the photoluminescence peak, and plays a key role
in the suppression of the photoluminescence intensity observed in TMDCs with
thickness beyond monolayer.
