  The doping dependence of the themopower, in-plane resistivity rho_ab(T),
out-of-plane resistivity rho_c(T), and susceptibility has been systematically
measured for high-quality single crystal Bi2Sr2Ca2Cu3O10+delta. We found that
the transition temperature Tc and pseudogap formation temperature T_rho_c*,
below which rho_c shows a typical upturn, do not change from their optimum
values in the "overdoped" region, even though doping actually proceeds. This
suggests that, in overdoped region, the bulk $T_c$ is determined by the always
underdoped inner plane, which have a large superconducting gap, while the
carriers are mostly doped in the outer planes, which have a large phase
stiffness.
