  We report on the fabrication of dendrimer sandwich devices with electrical
switching and memory properties. The storage media is consisted of a
redox-gradient dendrimer layer sandwiched in organic barrier thin films. The
dendrimer layer acts as potential well where redox-state changes and consequent
electrical transitions of the embedded dendrimer molecules are expected to be
effectively triggered and retained, respectively. Experimental results
indicated that electrical switching could be reproducibly obtained in such
dendrimer sandwiches upon a threshold bias voltage. After switching, the device
conductivity could be increased more than three orders of magnitude, which can
keep stable for several days in ambient conditions. Our work demonstrates the
possibility of using solid-state redox-gradient dendrimer films as hopeful
information storage media.
