  We have decomposed the modeling of the field-effect transistors into the two
independent parts: the current continuity based kinetics and the charge
neutrality based electrostatics. The former part, that is universal for all
FETs, leads to an explicit and closed form of I-V characteristics as a function
of the total channel charge. The latter part, which is specific for a
particular material and geometric configurations can be considered as an
independent engineering task. The quantum capacitance and the interface trap
density are consistently incorporated into the solution of the current
continuity equation in the diffusion-drift approximation, providing a complete
consistency in the current and the capacitance small-signal characteristics.
