  Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics,
we characterize the density of electrically active traps at low-temperature
after 16keV phosphorus ion-implantation through the oxide. We find that, after
rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion
contributes an additional 0.08 plus/minus 0.03 electrically active traps,
whilst no increase in the number of traps is seen for comparable silicon
implants. This result shows that the additional traps are ionized P donors, and
not damage due to the implantation process. We also find, using the room
temperature threshold voltage shift, that the electrical activation of donors
at an implant density of 2x10^12 cm^-2 is ~100%.
