  In this work, the BiFeO3 (BFO)/SrRuO3 (SRO) heterostructure was fabricated
and the anomalous Hall effect (AHE) was investigated the in BFO/SRO. It is
found the nonmonotonic anomalous Hall resistivity behavior in BFO/SRO is
originated from the inhomogeneous SRO layer instead of the topological Hall
effect. It is surprised that the AHE in BFO/SRO structure can be manipulated by
ferroelectric polarization of BFO. Moreover, an inhomogeneous phenomenological
model has been applied on those structure. Furthermore, the modification of
band structure in SRO under ferroelectric polarization was discussed by first
principle calculation. The ferroelectric-manipulated AHE suggests a new pathway
to realize nonvolatile, reversible and low energy-consuming voltage-controlled
spintronic devices.
