  The angular distribution function of multiple scattering experienced by 855
MeV electrons passing through an amorphous silicon plate and an oriented
silicon crystal has been studied by means of relativistic molecular dynamics
simulations using two types of the potentials that describe electron-atom
interaction. The differences in the angular distributions of the beam particles
in both media are analysed. The results obtained are compared to the
experimental data and to the results of Monte Carlo simulations.
