  Current nanostructure fabrication by etching is usually limited to planar
structures as they are defined by a planar mask. The realisation of
three-dimensional (3D) nanostructures by etching requires technologies beyond
planar masks. We present a method to fabricate a 3D mask that allows to etch
three-dimensional monolithic nanostructures by using only CMOS-compatible
processes. The mask is written in a hard-mask layer that is deposited on two
adjacent inclined surfaces of a Si wafer. By projecting in single step two
different 2D patterns within one 3D mask on the two inclined surfaces, the
mutual alignment between the patterns is ensured. Thereby after the mask
pattern is defined, the etching of deep pores in two oblique directions yields
a three-dimensional structure in Si. As a proof of concept we demonstrate 3D
mask fabrication for three-dimensional diamond-like photonic band gap crystals
in silicon. The fabricated crystals reveal a broad stop gap in optical
reflectivity measurements. We propose how 3D nanostructures with five different
Bravais lattices can be realised, namely cubic, tetragonal, orthorhombic,
monoclinic, and hexagonal, and demonstrate a mask for a 3D hexagonal crystal.
We also demonstrate the mask for a diamond-structure crystal with a 3D array of
cavities. In general, the 2D patterns for the different surfaces can be
completely independent and still be in perfect mutual alignment. Indeed, we
observe an alignment accuracy of better than 3.0 nm between the 2D mask
patterns on the inclined surfaces, which permits one to etch well-defined
monolithic 3D nanostructures.
