  The electrical properties of thin TiO2 films have recently been extensively
exploited towards enabling a variety for metal-oxide electron devices:
unipolar/bipolar semiconductor devices and/or memristors. In such efforts,
investigations on the role of TiO2 as active material have been the main focus,
however, electrode materials are equally important. In this work, we address
this need by presenting a systematic quantitative electrical characterisation
study on the interface characteristics of Metal-TiO2-Metal structures. Our
study employs typical contact materials that are used both as top and bottom
electrodes in a Metal-TiO2-Metal setting. This allows investigating the effect
of Metal-TiO2 contacts as well as holistically studying an electrode's
influence to the opposite interface, referred to as top/bottom electrodes
coupling. Our methodology comprises the recording of current-voltage (I-V)
characteristics from a variety of solid-state prototypes in the temperature
range of 300-350 K and by analysing them through appropriate modelling. Clear
field and temperature dependent signature plots were also obtained towards
shinning more light on the role of each material as top/bottom electrodes in
Metal-TiO2-Metal structures. Our results provide a useful database for
selecting appropriate electrode materials in Metal-TiO2 devices, offering new
insights in metal-oxide electronics applications.
