  The scalable synthesis of strong spin orbit coupling (SOC) materials such as
1T${}^\prime$ phase MoTe${}_2$ is crucial for spintronics development. Here, we
demonstrate wafer-scale growth of 1T${}^\prime$ MoTe${}_2$ using metal-organic
chemical vapor deposition (MOCVD) with sputtered Mo and
(C${}_4$H${}_9$)${}_2$Te. The synthesized films show uniform coverage across
the entire sample surface. By adjusting the growth parameters, a synthesis
process capable of producing 1T${}^\prime$ and 2H MoTe${}_2$ mixed phase films
was achieved. Notably, the developed process is compatible with
back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the
grown 1T${}^\prime$ MoTe${}_2$ films was demonstrated through spin torque
ferromagnetic resonance (ST-FMR) measurements conducted on a 1T${}^\prime$
MoTe${}_2$/permalloy bilayer RF waveguide. These measurements revealed a
significant damping-like torque in the wafer-scale 1T${}^\prime$ MoTe${}_2$
film and indicated high spin-charge conversion efficiency. The BEOL compatible
process and potent spin orbit torque demonstrate promise in advanced device
applications.
