  Parallel Molecular Dynamics simulations are conducted for describing growth
on surfaces with different kind of roughness: a perfect ordered crystalline
flat graphite surface, a disordered rough graphite surface and flat surface
with an ordered localized defect. It is shown that disordered rough surfaces
results in a first step to reduction of the sticking coefficient, increased
cluster density, size reduction. Structure of the clusters shows the
disappearance of the octahedral site characteristic of compact structure.
Isolated defect induces cluster-cluster interactions that modify growth
compared to perfect flat surface. Kinetic study of growth shows power law
t&#945;z evolution for low impinging atom kinetic energy. Increasing kinetic
energy, on all kinds of surfaces, results in a slightly larger exponent z, but
fitting by an exponential function is quite good too. Lattice expansion is
favoured on rough surfaces but increasing incoming atom kinetic energy weakens
this effect.
