  Superconducting thin-film electronics are attractive for their low power
consumption, fast operating speeds, and ease of interface with cryogenic
systems such as single-photon detector arrays, and quantum computing devices.
However, the lack of a reliable superconducting two-terminal asymmetric device,
analogous to a semiconducting diode, limits the development of power-handling
circuits, fundamental for scaling up these technologies. Existing efforts to
date have been limited to single-diode proofs of principle and lacked
integration of multiple controllable and reproducible devices to form complex
circuits. Here, we demonstrate a robust superconducting diode with tunable
polarity using the asymmetric Bean-Livingston surface barrier in niobium
nitride micro-bridges, achieving a 43% rectification efficiency. We then
realize and integrate several such diodes into a bridge rectifier circuit on a
single microchip that performs continuous full-wave rectification up to 3 MHz
and AC-to-DC conversion in burst mode at 50 MHz with an estimated peak power
efficiency of 60%.
