  We use point contact Andreev reflection spin spectroscopy to measure the
transport spin polarization of MnAs epitaxial films grown on (001) GaAs. By
analyzing both the temperature dependence of the contact resistance and the
phonon spectra of lead acquired simultaneously with the spin polarization
measurements, we demonstrate that all the point contacts are in the ballistic
limit. A ballistic transport spin polarization of approximately 49% and 44% is
obtained for the type A and type B orientations of MnAs, respectively. These
measurements are consistent with our density functional calculations, and with
recent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)As
tunnel junctions.
