  We report on the discovery of a large, room temperature magnetoresistance
(MR) effect in polyfluorene sandwich devices in weak magnetic fields. We
characterize this effect and discuss its dependence on voltage, temperature,
film thickness, electrode materials, and (unintentional) impurity
concentration. We usually observed negative MR, but positive MR can also be
achieved under high applied electric fields. The MR effect reaches up to 10% at
fields of 10mT at room temperature. The effect shows only a weak temperature
dependence and is independent of the sign and direction of the magnetic field.
We find that the effect is related to the hole current in the devices.
