  Fast feedback from cryogenic electrical characterization measurements is key
for the development of scalable quantum computing technology. At room
temperature, high-throughput device testing is accomplished with a probe-based
solution, where electrical probes are repeatedly positioned onto devices for
acquiring statistical data. In this work we present a probe station that can be
operated from room temperature down to below 2$\,$K. Its small size makes it
compatible with standard cryogenic measurement setups with a magnet. A large
variety of electronic devices can be tested. Here, we demonstrate the
performance of the prober by characterizing silicon fin field-effect
transistors as a host for quantum dot spin qubits. Such a tool can massively
accelerate the design-fabrication-measurement cycle and provide important
feedback for process optimization towards building scalable quantum circuits.
