  We report the successful formation of bulk insulating ternary topological
insulators candidate Bi2Se2Te (BST) by pulsed laser deposition technique. The
films were deposited with sequential ablation of separate Bi2Se3 (BS) and
Bi2Te3 (BT) targets. From the X-ray diffraction analysis and temperature
dependent resistivity we were able to conclude that the as grown thin films
have ordered chalcogen layers and the chemical potential in these thin films
lie in the bulk gap. To realize entirely topological transport for any device
applications it is essential to tune the chemical potential in the bulk gap of
the Dirac cone. Magnetotransport data exhibits pronounced two dimensional
weak-antilocalization behavior (WAL) at low temperatures. BS and BT thin films
do not exhibit topological transport as the chemical potential does not lie
entirely in the bulk gap. It was found that BST thin films grown with this cost
effective and simple yet elegant technique using double target can be used to
deposit quaternary TI thin films, thereby tuning the chemical potential at will
in the gap.
