  We show in this paper that the technologically relevant field-like spin-orbit
torque shows resilience against the geometrical effect of electron
backscattering. As device grows smaller in sizes, the effect of geometry on
physical properties like spin torque, and hence switching current could place a
physical limit on the continued shrinkage of such device -- a necessary trend
of all memory devices (MRAM). The geometrical effect of curves has been shown
to impact quantum transport and topological transition of Dirac and topological
systems. In our work, we have ruled out the potential threat of line-curves
degrading the effectiveness of spin-orbit torque switching. In other words,
spin-orbit torque switching will be resilient against the influence of curves
that line the circumferences of defects in the events of electron
backscattering, which commonly happen in the channel of modern electronic
devices.
