  We calculate the transverse effective charges of zincblende compound
semiconductors using Harrison's tight-binding model to describe the electronic
structure. Our results, which are essentially exact within the model, are found
to be in much better agreement with experiment than previous
perturbation-theory estimates. Efforts to improve the results by using more
sophisticated variants of the tight-binding model were actually less
successful. The results underline the importance of including quantities that
are sensitive to the electronic wavefunctions, such as the effective charges,
in the fitting of tight-binding models.
