  The local environment of Ga, Se, and Tl atoms in InTe-based solid solutions
was studied by EXAFS technique. It was shown that all investigated atoms are
substitutional impurities, which enter the In(1), Te, and In(2) positions in
the InTe structure, respectively. The electrical measurements revealed that
In$_{1-x}$Ga$_x$Te and InTe$_{1-x}$Se$_x$ solid solutions become semiconductors
at $x>0.24$ and $x>0.15$, respectively.
