  Gate controllable electronic trap detection method has been demonstrated by
regulating the gate potential of MIS devices. This method is based on shift of
capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in
less than 10 micro-seconds due to injection or ejection of electrons through
the metal gate. Using this method, an electronic trap energy distribution was
measured in the HfO2 dielectric film and it confirms a maximum number of traps
(Delta_NT) of 1.7x1012 cm-2 corresponding to an energy level (Delta_EIL) of
0.45 eV above silicon conduction band (Si-ECB). In comparison, ZrO2-based MIS
devices showed a broader distribution of electronic traps throughout the band
gap. However, HfO2 contained more than 60% traps in deep level compared to 50%
in ZrO2, which establishes the effects of material variation.
