  Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion
implantation followed by pulsed laser annealing and flash lamp annealing. In
both cases, the implanted Si layer can be well recrystallized by liquid phase
epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission
electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the
so-called growth interface breakdown or cellular breakdown owing to the
occurrence of constitutional supercooling in the melt. The appearance of
cellular breakdown prevents further recrystallization. However, the
out-diffusion and cellular breakdown can be effectively suppressed by solid
phase epitaxy during flash lamp annealing due to the high velocity of
amorphous-crystalline interface and the low diffusion velocity for Ti in the
solid phase.
