  Novel non-volatile memory devices based on ferroelectric thin films represent
a promising emerging technology that is ideally suited for neuromorphic
applications. The physical switching mechanism in such films is the nucleation
and growth of ferroelectric domains. Since this has a strong dependence on both
pulse width and voltage amplitude, it is important to use precise pulsing
schemes for a thorough characterization of their behaviour. In this work, we
present an on-chip 120 dB programmable range pulse generator, that can generate
pulse widths ranging from 10ns to 10ms $\pm$2.5% which eliminates the RLC
bottleneck in the device characterisation setup. We describe the pulse
generator design and show how the pulse width can be tuned with high accuracy,
using Digital to Analog converters. Finally, we present experimental results
measured from the circuit, fabricated using a standard 180nm CMOS technology.
