  In a study of the influence of ZrB2 additions on the irreversibility field,
Birr and the upper critical field Bc2, bulk samples with 7.5 at. % ZrB2
additions were made by a powder milling and compaction technique. These samples
were then heated to 700-900C for 0.5 hours. Resistive transitions were measured
at 4.2 K and Birr and Bc2 values were determined. An increase in Bc2 from 20.5
T to 28.6 T and enhancement of Birr from 16 T to 24 T were observed in the ZrB2
doped sample as compared to the binary sample at 4.2 K. Critical field
increases similar to those found with SiC doping were seen at 4.2 K. At higher
temperatures, increases in Birr were also determined by M-H loop extrapolation
and closure. Values of Birr which were enhanced with ZrB2 doping (as compared
to the binary) were seen at temperatures up to 34 K, with Birr values larger
than those for SiC doped samples at higher temperatures. The transition
temperature, Tc, was then measured using DC susceptibility and a 2.5 K drop of
the midpoint of Tc was observed. The critical current density was determined
using magnetic measurements and was found to increase at all temperatures
between 4.2 K and 35 K with ZrB2 doping.
