  Employing many-valued logic (MVL) data processing allows to dramatically
increase the performance of computing circuits. Here we propose to employ
ferroelectrics for the material implementation of MVL units basing on their
ability to pin the polarization as a sequence of multi-stable states. Two
conceptual ideas are considered. As the first system, we suggest using the
strained ferroelectric films that can host the polarization states, allowing
the effective field-induced multilevel switching between them. As the second
one, we propose to employ the ferroelectric nano-samples that confine the
topologically protected polarization textures, which may be used as MVL
structural elements. We demonstrate that these systems are suitable for
engineering of the 3-, 4- and even 5-level logic units and consider the circuit
design for such elements.
