  W centers are trigonal defects generated by self-ion implantation in silicon
that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that
they can be used in waveguide-integrated all-silicon light-emitting diodes
(LEDs). Here we optimize the implant energy, fluence and anneal conditions to
maximize the photoluminescence intensity for W centers implanted in
silicon-on-insulator, a substrate suitable for waveguide-integrated devices.
After optimization, we observe near two orders of magnitude improvement in
photoluminescence intensity relative to the conditions with the stopping range
of the implanted ions at the center of the silicon device layer. The previously
demonstrated waveguide-integrated LED used implant conditions with the stopping
range at the center of this layer. We further show that such light sources can
be manufactured at the 300-mm scale by demonstrating photoluminescence of
similar intensity from 300 mm silicon-on-insulator wafers. The luminescence
uniformity across the entire wafer is within the measurement error.
