  We present an extensive study of a large, room temperature negative
magnetoresistance (MR) effect in tris-(8-hydroxyquinoline) aluminum sandwich
devices in weak magnetic fields. The effect is similar to that previously
discovered in polymer devices. We characterize this effect and discuss its
dependence on field direction, voltage, temperature, film thickness, and
electrode materials. The MR effect reaches almost 10% at fields of
approximately 10 mT at room temperature. The effect shows only a weak
temperature dependence and is independent of the sign and direction of the
magnetic field. Measuring the devices' current-voltage characteristics, we find
that the current depends on the voltage through a power-law. We find that the
magnetic field changes the prefactor of the power-law, whereas the exponent
remains unaffected. We also studied the effect of the magnetic field on the
electroluminescence (MEL) of the devices and analyze the relationship between
MR and MEL. We find that the largest part of MEL is simply a consequence of a
change in device current caused by the MR effect.
