  GeTe has been proposed as the father compound of a new class of functional
materials displaying bulk Rashba effects coupled to ferroelectricity:
ferroelectric Rashba semiconductors. In nice agreement with first principle
calculations, we show by angular resolved photoemission and piezo-force
microscopy that GeTe displays surface and bulk Rashba bands arising from the
intrinsic inversion symmetry breaking provided by the remanent ferroelectric
polarization. This work points to the possibility to control the spin chirality
of bands in GeTe by acting on its ferroelectric polarization.
