  Electrical spin injection into semiconductors paves the way for exploring new
phenomena in the area of spin physics and new generations of spintronic
devices. However the exact role of interface states in spin injection mechanism
from a magnetic tunnel junction into a semiconductor is still under debate. In
this letter, we demonstrate a clear transition from spin accumulation into
interface states to spin injection in the conduction band of $n$-Ge. We observe
spin signal amplification at low temperature due to spin accumulation into
interface states followed by a clear transition towards spin injection in the
conduction band from 200 K up to room temperature. In this regime, the spin
signal is reduced down to a value compatible with spin diffusion model. More
interestingly, we demonstrate in this regime a significant modulation of the
spin signal by spin pumping generated by ferromagnetic resonance and also by
applying a back-gate voltage which are clear manifestations of spin current and
accumulation in the germanium conduction band.
