  Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have
shown a unique voltage controllable interlayer magnetic coupling effect. Here
we investigate the quality of the GdOX barrier and the coupling mechanism in
these junctions by examining the temperature dependence of the tunneling
magnetoresistance and the interlayer coupling from room temperature down to 11
K. The barrier is shown to be of good quality with the spin independent
conductance only contributing a small portion, 14%, to the total room
temperature conductance, similar to AlOX and MgO barriers. The interlayer
coupling, however, shows an anomalously strong temperature dependence including
sign changes below 80 K. This non-trivial temperature dependence is not
described by previous models of interlayer coupling and may be due to the large
induced magnetic moment of the Gd ions in the barrier.
