  Evidence of the Ettingshausen effect in the breakdown regime of the integer
quantum Hall effect has been observed in a GaAs/AlGaAs two-dimensional electron
system. Resistance of micro Hall bars attached to both edges of a current
channel shows remarkable asymmetric behaviors which indicate an electron
temperature difference between the edges. The sign of the difference depends on
the direction of the electric current and the polarity of the magnetic field.
The results are consistent with the recent theory of Akera.
