  We report on fabrication of novel field-effect transistors (FETs) based on
transition metal dichalcogenides. The unique structure of single crystals of
these layered inorganic semiconductors enables fabrication of FETs with
intrinsically low field-effect threshold and high charge carrier mobility,
comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the
p-type conductivity in the WSe2-based FETs at room temperature). These novel
FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they
hold potential for applications in "flexible" electronics.
