  We have developed an incandescent Mo source to fabricate large-area
single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were
characterized using transmission electron microscopy, energy dispersive X-ray
spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence,
reflection high energy electron diffraction (RHEED) and angular resolved
photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591
cm-1 was identified. Results from Raman spectroscopy, photoluminescence, RHEED
and ARPES studies consistently reveal that large-area single crystalline
mono-layer of MoSe2 could be achieved by this technique. This technique enjoys
several advantages over conventional approaches and could be extended to the
growth of other two-dimensional layered materials containing a
low-vapor-pressure element.
