  Color centers have emerged as a leading qubit candidate for realizing hybrid
spin-photon quantum information technology. One major limitation of the
platform, however, is that the characteristics of individual color-centers are
often strain dependent. As an illustrative case, the silicon-vacancy center in
diamond typically requires millikelvin temperatures in order to achieve long
coherence properties, but strained silicon vacancy centers have been shown to
operate at temperatures beyond 1K without phonon-mediated decoherence. In this
work we combine high-stress silicon nitride thin films with diamond
nanostructures in order to reproducibly create statically strained
silicon-vacancy color centers (mean ground state splitting of 608 GHz) with
strain magnitudes of $\sim 4 \times 10^{-4}$. Based on modeling, this strain
should be sufficient to allow for operation of a majority silicon-vacancy
centers within the measured sample at elevated temperatures (1.5K) without any
degradation of their spin properties. This method offers a scalable approach to
fabricate high-temperature operation quantum memories. Beyond silicon-vacancy
centers, this method is sufficiently general that it can be easily extended to
other platforms as well.
