  An attempt is made to simulate the homoepitaxial growth of a Si(111) surface
by the kinetic Monte Carlo method in which the standard Solid-on-Solid model
and the planar model of the (7x7) surface reconstruction are used in
combination.
  By taking account of surface reconstructions as well as atomic deposition and
migrations, it is shown that the effect of a coorparative stacking
transformation is necessary for a layer growth.
