  We present a stochastic simulation method designed to study at an atomic
resolution the growth kinetics of compounds characterized by the sp3-type
bonding symmetry. Formalization and implementation details are discussed for
the particular case of the 3C-SiC material. A key feature of our numerical tool
is the ability to simulate the evolution of both point-like and extended
defects, whereas atom kinetics depend critically on process-related parameters.
In particular, the simulations can describe the surface state of the crystal
and the generation/evolution of defects as a function of the initial substrate
condition and the calibration of the simulation parameters. We demonstrate that
quantitative predictions of the microstructural evolution of the studied
systems can be readily compared with the structural characterization of actual
processed samples.
