  Josephson junction field effect transistors (JJ-FET) share design
similarities with metal-oxide-semiconductor field effect transistors, except
for the source/drain contacts being replaced by superconductors. Similarly, the
super current due to proximity effect is tunable by the gate voltage. In this
study, we examine the feasibility of JJ-FET-based Boolean logic and memory
elements for cryogenic computing, in light of recent advances in novel
materials and fabrication techniques. Using a two-dimensional ballistic
transport JJ-FET model, we implement circuit level simulations for JJ-FET logic
gates, and discuss criteria for realizing signal restoration, as well as
fanout. We show that the JJ-FET is a promising candidate for very low power,
clocked voltage-level dynamic logic at cryogenic temperatures.
