  We synthesized a series of V-doped LiFe$_{1-x}$V$_x$As single crystals. The
superconducting transition temperature $T_c$ of LiFeAs decreases rapidly at a
rate of 7 K per 1\% V. The Hall coefficient of LiFeAs switches from negative to
positive with 4.2\% V doping, showing that V doping introduces hole carriers.
This observation is further confirmed by the evaluation of the Fermi surface
volume measured by angle-resolved photoemission spectroscopy (ARPES), from
which a 0.3 hole doping per V atom introduced is deduced. Interestingly, the
introduction of holes does not follow a rigid band shift. We also show that the
temperature evolution of the electrical resistivity as a function of doping is
consistent with a crossover from a Fermi liquid to a non-Fermi liquid. Our
ARPES data indicate that the non-Fermi liquid behavior is mostly enhanced when
one of the hole $d_{xz}/d_{yz}$ Fermi surfaces is well nested by the
antiferromagnetic wave vector to the inner electron Fermi surface pocket with
the $d_{xy}$ orbital character. The magnetic susceptibility of
LiFe$_{1-x}$V$_x$As suggests the presence of strong magnetic impurities
following V doping, thus providing a natural explanation to the rapid
suppression of superconductivity upon V doping.
