  We consider the excitonic effects on the thermal properties in the AB-stacked
bilayer graphene. The calculations are based on the bilayer generalization of
the usual Hubbard model at the half-filling. The full interaction bandwidth is
used without any low-energy assumption. We obtain the unusually high values for
the electronic figure of merit even at the room-temperatures which is very
promising for the thermoelectric applications of the AB-bilayer structure. We
discuss the effects of the interlayer Coulomb interaction and temperature on
different thermal parameters in the bilayer graphene and we emphasize the role
of the charge neutrality point in the thermal properties and within the
excitonic insulator transition scenario. The calculated values of the rate of
thermoelectric conversion efficiency suggest the possibility of
high-performance device applications of AB-bilayer graphene.
