  The electronic property of NiFe$_2$O$_4$ nanowire device is investigated
through nonequilibrium Green's functions (NEGF) in combination with density
functional theory (DFT). The electronic transport properties of NiFe$_2$O$_4$
nanowire are studied in terms of density of states, transmission spectrum and
$I{-}V$ characteristics. The density of states gets modified with the applied
bias voltage across NiFe$_2$O$_4$ nanowire device, the density of charge is
observed both in the valence band and in the conduction band on increasing the
bias voltage. The transmission spectrum of NiFe$_2$O$_4$ nanowire device gives
the insights on the transition of electrons at different energy intervals. The
findings of the present work suggest that NiFe$_2$O$_4$ nanowire device can be
used as negative differential resistance (NDR) device and its NDR property can
be tuned with the bias voltage, which may be used in microwave device, memory
devices and in fast switching devices.
