  The Berry phase picture provides important insights into the electronic
properties of condensed matter systems. The intrinsic anomalous Hall (AH)
effect can be understood as a consequence of non-zero Berry curvature in
momentum space. The realization of the quantum anomalous Hall effect provided
conclusive evidence for the intrinsic mechanism of the AH effect in magnetic
topological insulators (TIs). Here we fabricated magnetic TI/TI
heterostructures and found both the magnitude and sign of the AH effect in the
magnetic TI layer can be altered by tuning the TI thickness and/or the electric
gate voltage. The sign change of the AH effect with increasing TI thickness is
attributed to the charge transfer across the TI and magnetic TI layers,
consistent with first-principles calculations. By fabricating the magnetic
TI/TI/magnetic TI sandwich heterostructures with different dopants, we created
an artificial topological Hall (TH) effect-like feature in Hall traces. This
artificial TH effect is induced by the superposition of two AH effects with
opposite signs instead of the formation of chiral spin textures in the samples.
Our study provides a new route to engineer the Berry curvature in magnetic
topological materials that may lead to potential technological applications.
