  In the present study we calculate the energy values and the spatial
distributions of the bound electronic states in some diffused quantum wells.
The calculations are performed within the virtual crystal approximation, $sp^3
s^*$ spin dependent empirical tight-binding model and the surface Green
function matching method. A good agreement is found between our results and
experimental data obtained for AlGaAs/GaAs quantum wells with thermally induced
changes in the profile at the interfaces. Our calculations show that for
diffusion lengths $L_{D}=20\div100$ {\AA} the transition (C3-HH3) is not
sensitive to the diffusion length, but the transitions (C1-HH1), (C1-LH1),
(C2-HH2) and (C2-LH2) display large "blue shifts" as L_{D} increases. For
diffusion lengths $L_{D}=0\div20$ {\AA} the transitions (C1-HH1) and (C1-LH1)
are less sensitive to the L_{D} changes than the (C3-HH3) transition. The
observed dependence is explained in terms of the bound states spatial
distributions.
