  In order to increase the thermal stability of a magnetic random access memory
(MRAM) cell, materials with high spin-orbit interaction are often introduced in
the storage layer. As a side effect, a strong Dzyaloshinskii-Moriya interaction
(DMI) may arise in such systems. Here we investigate the impact of DMI on the
magnetic cell performance, using micromagnetic simulations. We find that DMI
strongly promotes non-uniform magnetization states and non-uniform switching
modes of the magnetic layer. It appears to be detrimental for both the thermal
stability of the cell and its switching current, leading to considerable
deterioration of the cell performance even for a moderate DMI amplitude.
