  We have studied quantized transport in HgTe wells with inverted band
structure corresponding to the two-dimensional topological insulator phase (2D
TI) with locally-controlled density allowing n-p-n and n-2D TI-n junctions. The
resistance reveals the fractional plateau $2h/e^{2}$ in n-p-n regime in the
presence of the strong perpendicular magnetic field. We found that in n-2D TI-n
regime the plateaux in resistance in not universal and results from the edge
state equilibration at the interface between chiral and helical edge modes. We
provided the simple model describing the resistance quantization in n-2D TI-n
regime.
