  We demonstrate that by carefully analyzing the temperature dependent
characteristics of the I-V measurements for a given complex system it is
possible to determine whether it is composed of a single, double or multiple
quantum-dot structure. Our approach is based on the orthodox theory for a
double-dot case and is capable of simulating I-V characteristics of systems
with any resistance and capacitance values and for temperatures corresponding
to thermal energies larger than the dot level spacing. We compare I-V
characteristics of single-dot and double-dot systems and show that for a given
measured I-V curve considering the possibility of a second dot is equivalent to
decreasing the fit temperature. Thus, our method allows one to gain information
about the structure of an experimental system based on an I-V measurement.
