  We report on the fabrication and characterization of high-quality chemical
vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate
that CVD-grown BLG can mechanically be detached from the copper foil by an
hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG
interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG
crystals and a high structural quality. From transport measurements on fully
encapsulated hBN/BLG/hBN Hall bar devices we extract charge carrier mobilities
up to 180,000 cm$^2$/(Vs) at 2 K and up to 40,000 cm$^2$/(Vs) at 300 K,
outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show
an on-off ration of more than 10,000 and a band gap opening with values of up
to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.
