  In this work multilevel pattering capabilities of Substrate Conformal Imprint
Lithography (SCIL) have been explored. A mix & match approach combining the
high throughput of nanoimprint lithography with the excellent overlay accuracy
of electron beam lithography (EBL) has been exploited to fabricate nanoscale
devices. An EBL system has also been utilized as a benchmarking tool to measure
both stamp distortions and alignment precision of this mix & match approach. By
aligning the EBL system to 20 mm x 20 mm and 8 mm x 8 mm cells to compensate
pattern distortions of order of $3 \mu m$ over 6 inch wafer area, overlay
accuracy better than $1.2 \mu m$ has been demonstrated. This result can
partially be attributed to the flexible SCIL stamp which compensates
deformations caused by the presence of particles which would otherwise
significantly reduce the alignment precision.
