  A crucial requirement for quantum computing, in particular for scalable
quantum computing and error correction, is a fast and high-fidelity qubit
readout. For semiconductor based qubits, one limiting factor for local
low-power signal amplification, is the output swing of the charge sensor. We
demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically
designed to provide a significantly improved response compared to conventional
charge sensing dots. Our ASD design features a strongly decoupled drain
reservoir from the sensor dot, which mitigates negative feedback effects found
in conventional sensors. This results in a boosted output swing of
$3\,\text{mV}$, which exceeds the response in the conventional regime of our
device by more than ten times. The enhanced output signal paves the way for
employing very low-power readout amplifiers in close proximity to the qubit.
