  The possibility to generate and manipulate non-classical light using the
tools of mature semiconductor technology carries great promise for the
implementation of quantum communication science. This is indeed one of the main
driving forces behind ongoing research on the study of semiconductor quantum
dots. Often referred to as artificial atoms, quantum dots can generate single
and entangled photons on demand and, unlike their natural counterpart, can be
easily integrated into well-established optoelectronic devices. However, the
inherent random nature of the quantum dot growth processes results in a lack of
control of their emission properties. This represents a major roadblock towards
the exploitation of these quantum emitters in the foreseen applications. This
chapter describes a novel class of quantum dot devices that uses the combined
action of strain and electric fields to reshape the emission properties of
single quantum dots. The resulting electro-elastic fields allow for control of
emission and binding energies, charge states, and energy level splittings and
are suitable to correct for the quantum dot structural asymmetries that usually
prevent these semiconductor nanostructures from emitting polarization-entangled
photons. Key experiments in this field are presented and future directions are
discussed.
