  Silicon carbide (SiC) has become a popular material for next-generation power
components due to its smaller size, faster switching speed, simpler cooling and
greater reliability than Si-MOSFETs. With this in mind, we are thinking about
whether the replacement of Si-base with Germanium Carbide(GeC) will also have
good performance. This work explains the heat transfer of GeC by simulating the
thermal conductivity through molecular dynamics (MD) and proposes a potential
4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace
Si-MOSFETs.
