  We investigated the magnetic field dependence of the Hall and the bend
resistances in the ballistic regime for a single layer graphene Hall bar
structure containing a pn-junction. When both regions are n-type the Hall
resistance dominates and Hall type of plateaus are formed. These plateaus occur
as a consequence of the restriction on the angle imposed by Snell's law
allowing only electrons with a certain initial angles to transmit though the
potential step. The size of the plateau and its position is determined by the
position of the potential interface as well as the value of the applied
potential. When the second region is p-type the bend resistance dominates which
is asymmetric in field due to the presence of snake states. Changing the
position of the pn-interface in the Hall bar strongly affects these states and
therefore the bend resistance is also changed. Changing the applied potential
we observe that the bend resistance exhibits a peak around the
charge-neutrality point (CNP) which is independent of the position of the
pn-interface, while the Hall resistance shows a sign reversal when the CNP is
crossed, which is in very good agreement with a recent experiment [J. R.
Williams et al., Phys. Rev. Lett. 107, 046602(2011)].
