  We have studied the temperature effect on collective excitations in biased
bilayer graphene within random-phase approximation. From the zeros of
temperature dynamical dielectric function of the system we have found one
weakly damped plasmon mode. For a given electrostatic potential bias, at low
(high) temperature T the plasmon frequency changes slightly (increases
remarkably) with T. We have also studied the effects of potential bias and
carrier density on the plasmon frequency of the system at finite temperatures.
