  We experimentally investigated the properties of graphite layers produced by
an easy and non-conventional method of repeatedly rubbing conventional random
stacked graphite bulk against insulating and semiconductor substrates. The
patterned structure composed of rubbed-off and transferred layers exhibits
properties of a solid-state material with through-thickness anisotropy of
carrier mobility reaching ~10^3 cm^2/V*sec at the surface. The surface of the
structure demonstrates quality of more ordered and optically oriented mono or
few layer graphene shaped by self-organization process due to friction.
Enhanced photoconductivity originating from modification of continuous and
linear valence and conduction bands caused by interaction between 4 graphene
layers made possible obtaining Raman spectra at near infrared excitation
wavelength of 976 nm.
