  The model of spatial-temporal distribution of point defects in a three-layer
stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs considering the
self-assembled deformation-diffusion interaction is constructed. Within the
framework of this model, the profile of spatial-temporal distribution of
vacancies (interstitial atoms) in the stressed nanoheterosystem
GaAs/In$_x$Ga$_{1 - x}$As/GaAs is calculated. It is shown that in the case of a
stationary state ($t > 5\tau _d^{(2)}$), the concentration of vacancies in the
inhomogeneously compressed interlayer is smaller relative to the initial
average value $N_{d0}^{(2)}$ by 16%
