  Raman thermometry is advantageous for measuring the thermal transport of
low-dimensional materials due to its non-contact nature. Transient Raman
methods have improved the accuracy of steady-state Raman thermometry by
removing the need for accurate temperature calibration and laser absorption
evaluation. However, current methods often resort to finite element analysis
(FEA) to decipher the measured signals. This step is time-consuming and impedes
its ubiquitous adaptation. In this work, we replace the FEA by fitting the
transient-state Raman signal to a three-dimensional (3D) analytical heat
transfer model for measuring the thermal conductivity of two bulk layered
materials [i.e., molybdenum disulfide (MoS2) and bismuth selenide (Bi2Se3)
crystals] and the interfacial thermal conductance (h) of CVD-grown MoS2 and
molybdenum di-selenide (MoSe2) on quartz (SiO2). Our measured results agree
reasonably well with literature and theoretical calculations. We also performed
a quantitative sensitivity analysis to give insights on how to improve the
measurement sensitivity. Our work provides an efficient way to process the data
of transient-based Raman thermometry for high throughput measurements.
