  Electron-hole excitations in the surface bands of GaAs(110) are analyzed
using constrained density-functional theory calculations. The results show that
Frenkel-type autolocalized excitons are formed. The excitons induce a local
surface unrelaxation which results in a strong exciton-exciton attraction and
makes complexes of two or three electron-hole pairs more favorable than
separate excitons. In such microscopic exciton &quot;droplets&quot; the
electron density is mainly concentrated in the dangling orbital of a surface Ga
atom whereas the holes are distributed over the bonds of this atom to its As
neighbors thus weakening the bonding to the substrate. This finding suggests
the microscopic mechanism of a laser-induced emission of neutral Ga atoms from
GaAs and GaP (110) surfaces.
