  A model for gas bubble behavior in irradiated amorphous $U_3Si_2$ is
generalized to take into account local influence of sinks for point defects and
gas atoms as far as defect clustering resulting in growth of dislocation loops.
A universality of bubble size distribution function and scaling law of bubble
size growth is revealed. Temperature dependencies of main quantities governing
bubble growth are discussed. Local distribution of bubbles and dislocation
loops inside grains is studied in details to illustrate bubble size change in
the vicinity of grain boundaries and estimate local swelling. Obtained data are
compared with experimental and numerical studies.
