  Recent advances in quantum information processing with trapped ions have
demonstrated the need for new ion trap architectures capable of holding and
manipulating chains of many (>10) ions. Here we present the design and detailed
characterization of a new linear trap, microfabricated with scalable
complementary metal-oxide-semiconductor (CMOS) techniques, that is well-suited
to this challenge. Forty-four individually controlled DC electrodes provide the
many degrees of freedom required to construct anharmonic potential wells,
shuttle ions, merge and split ion chains, precisely tune secular mode
frequencies, and adjust the orientation of trap axes. Microfabricated
capacitors on DC electrodes suppress radio-frequency pickup and excess
micromotion, while a top-level ground layer simplifies modeling of electric
fields and protects trap structures underneath. A localized aperture in the
substrate provides access to the trapping region from an oven below, permitting
deterministic loading of particular isotopic/elemental sequences via
species-selective photoionization. The shapes of the aperture and
radio-frequency electrodes are optimized to minimize perturbation of the
trapping pseudopotential. Laboratory experiments verify simulated potentials
and characterize trapping lifetimes, stray electric fields, and ion heating
rates, while measurement and cancellation of spatially-varying stray electric
fields permits the formation of nearly-equally spaced ion chains.
