  Nickel oxide (NiO) is a binary compound with a lot of applications in the
present technology. NiO thin films were deposited by reactive sputtering
magnetron under several voltage biases applied in the glass substrates (0, 50,
100, 200, 300, 400 and 500 V). Films were characterized by profilometry, X-ray
diffraction, elemental composition and electrical resistivity at room
temperature and at low temperatures. The present work showed that despite the
insulating behavior of substrate the residual stress was reduced at high biases
and the (111) texture was promoted. Electrical resistivity was reduced at high
bias and at low temperatures thermal activation of p-type conduction was
detected.
