  Investigations of electrical properties of long-wavelength infrared (LWIR)
mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been
performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes
have been investigated using microprobe technique at T=78 K before and after an
exposure to various doses of gamma-radiation. The current transport mechanisms
for those structures are described within the framework of the balance equation
model taking into account the occupation of the trap states in the band gap.
