  Layered two-dimensional (2D) materials provide a wide range of unique
properties as compared to their bulk counterpart, making them ideal for
heterogeneous integration for on-chip interconnects. Hence, a detailed
understanding of the loss and index change on Si integrated platform is a
prerequisite for advances in opto-electronic devices impacting optical
communication technology, signal processing, and possibly photonic-based
computing. Here, we present an experimental guide to characterize transition
metal dichalcogenides (TMDs), once monolithically integrated into the Silicon
photonic platform at 1.55 um wavelength. We describe the passive tunable
coupling effect of the resonator in terms of loss induced as a function of 2D
material layer coverage length and thickness. Further, we demonstrate a
TMD-ring based hybrid platform as a refractive index sensor where resonance
shift has been mapped out as a function of flakes thickness which correlates
well with our simulated data. These experimental findings on passive TMD-Si
hybrid platform open up a new dimension by controlling the effective change in
loss and index, which may lead to the potential application of 2D material
based active on chip photonics.
