  Magnetic Tunnel Junctions (MTJs) constitute the novel memory element in
STT-MRAM, which is ramping to production at major foundries as an eFlash
replacement. MTJ switching exhibits a stochastic behavior due to thermal
fluctuations, which is modeled by s-LLGS and Fokker-Planck (FP) equations. This
work implements and benchmarks Finite Volume Method (FVM) and analytical
solvers for the FP equation. To deploy an MTJ model for circuit design, it must
be calibrated against silicon data. To address this challenge, this work
presents a regression scheme to fit MTJ parameters to a given set of measured
current, switching time and error rate data points, yielding a
silicon-calibrated model suitable for MRAM macro transient simulation.
