  Far-infrared diagonal and Hall conductivities of multilayer epitaxial
graphene on the C-face of SiC were measured using magneto-optical absorption
and Faraday rotation in magnetic fields up to 7 T and temperatures between 5
and 300 K. Multiple components are identified in the spectra, which include:
(i) a quasi-classical cyclotron resonance (CR), originating from the highly
doped graphene layer closest to SiC, (ii) transitions between low-index Landau
levels (LLs), which stem from weakly doped layers and (iii) a broad optical
absorption background. Electron and hole type LL transitions are optically
distinguished and shown to coexist. An electron-hole asymmetry of the Fermi
velocity of about 2% was found within one graphene layer, while the Fermi
velocity varies by about 10% across the layers. The optical intensity of the LL
transitions is several times smaller than what is theoretically expected for
isolated graphene monolayers without electron-electron and electron-phonon
interactions.
