  As applied to the numerical simulation of electron transport and scattering
processes in semiconductors an efficient model describing the scattering of
electrons by the ionized impurities is proposed. On the example of GaAs at 77
and 300 K and Si at 300 K the dependencies of low-field electron mobility on
the donor impurity concentration in the semiconductors are calculated in the
framework of proposed model as well as in the framework of such most frequently
used applied models as the Conwel-Weisskopf model and the Brooks-Herring one.
After comparing the calculation results with the well-known experimental data
it has been ascertained that the best agreement between the theory and
experiment is achieved with application of the proposed model.
