  We performed X-ray photoelectron spectroscopy (XPS) measurements on a thin
film of Si nanocrystals (SiNCs) while applying DC or AC external biases to
extract the resistance and the capacitance of the thin film. The measurement
consists of the application of 10 V DC or square wave pulses of 10 V amplitude
to the sample at various frequencies ranging from 0.01 Hz to 1 MHz while
recording X-ray photoemission data. To analyze the data, we propose three
different models with varying degrees of accuracy. The calculated capacitance
of SiNCs agrees with the experimental value in the literature.
