  The growth and electrical characterization of a heterojunction formed between
2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of
p-type MoS2 films on SiC was demonstrated using chemical vapor deposition, and
the MoS2 films were found to be crystalline based on x-ray diffraction
measurements. The resulting heterojunction was found to display rectification
and current-voltage characteristics consistent with a p-n junction diode.
Capacitance voltage measurements were used to determine the built-in voltage
for the p-MoS2/n-SiC heterojunction p-n diode. The demonstration of
heterogeneous material integration between 2D layered semiconductors and 3D SiC
enables a new class of heterostructures.
