  Here, we report a detailed method of growing LaAlGe, a non-magnetic Weyl
semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and
their structural and electrical characterizations. 50 nm thick LaAlGe films
were deposited and annealed for 16 hours in situ at a temperature 793 K.
As-grown high-quality films showed uniform surface topography and near ideal
stoichiometry with a body-centered tetragonal crystal structure.
Temperature-dependent longitudinal resistivity can be understood with dominant
interband s-d electron-phonon scattering in the temperature range 5-40 K. Hall
measurements confirmed the semimetallic nature of the films with electron
dominated charge carrier density near 7.15*10^21 cm^-3 at 5 K.
