  We have studied the properties of Si, Ge shallow donors and Fe, Mg deep
acceptors in $\beta$-Ga2O3 through temperature dependent van der Pauw and Hall
effect measurements of samples grown by a variety of methods, including
edge-defined film-fed (EFG), Czochralski (CZ), molecular beam epitaxy (MBE),
and low pressure chemical vapor deposition (LPCVD). Through simultaneous,
self-consistent fitting of the temperature dependent carrier density and
mobility, we are able to accurately estimate the donor energy of Si and Ge to
be 30 meV in $\beta$-Ga2O3. Additionally, we show that our measured Hall effect
data are consistent with Si and Ge acting as typical shallow donors, rather
than shallow DX centers. High temperature Hall effect measurement of Fe doped
$\beta$-Ga2O3 indicates that the material remains weakly n-type even with the
Fe doping, with an acceptor energy of 860 meV relative to the conduction band
for the Fe deep acceptor. Van der Pauw measurements of Mg doped Ga2O3 indicate
an activation energy of 1.1 eV, as determined from the temperature dependent
conductivity.
