  A novel defect control approach based on laminated HfO$_2$/ZrO$_2$ with
multifunctional TiN/Mo/TiOxNy electrode is proposed to significantly improve
the endurance and data retention in HZO-based ferroelectric capacitor. The
O-rich interface reduces leakage current and prolong the endurance up to 1011
cycles while retaining a 2Pr value of 34 ($\mu$C/cm$^2$ ) at 3.4MV/cm. Using
first-principles calculations and experiments, we demonstrate that the
enhancement of endurance is ascribed to the higher migration barrier of oxygen
vacancies within the laminated HZO film and higher work function of
MoO$_x$/TiO$_x$N$_y$ between top electrode and the insulating oxide. This
2.5-nm-thick TiOxNy barrier further increase the grain size of HZO, lowering
the activation field and thus improving polarization reversal speed. This
interfacial layer further decreases the overall capacitance, increases the
depolarization field, thereby enhancing the data retention. By fitting the data
using the Arrhenius equation, we demonstrate a 10-year data retention is
achieved at 109.6 $^\circ$C, surpassing traditional SS-HZO of 78.2 $^\circ$C
with a 450$^\circ$C RTA (required by backend-of-the-line). This work elucidates
that interfacial engineering serves as a crucial technology capable of
resolving the endurance, storage capability, and high-temperature data
retention issues for ferroelectric memory.
