  Femtosecond pump-probe (PP) differential reflectivity spectroscopy (DRS) and
four-wave mixing (FWM) experiments were performed simultaneously to study the
initial temporal dynamics of the exciton line-shapes in GaN epilayers. Beats
between the A-B excitons were found \textit{only for positive time delay} in
both PP and FWM experiments. The rise time at negative time delay for the
differential reflection spectra was much slower than the FWM signal or PP
differential transmission spectroscopy (DTS) at the exciton resonance. A
numerical solution of a six band semiconductor Bloch equation model including
nonlinearities at the Hartree-Fock level shows that this slow rise in the DRS
results from excitation induced dephasing (EID), that is, the strong density
dependence of the dephasing time which changes with the laser excitation
energy.
