  We study the thermopower of a junction between a metal and a strongly
correlated semiconductor. Both in the electronic ferroelectric regime and in
the Kondo insulator regime the thermoelectric figures of merit, ZT, of these
junctions are compared with that of the ordinary semiconductor. By inserting at
the interface one or two monolayers of atoms different from the bulk, with a
suitable choice of rare-earth elements very high values of ZT can be reached at
low temperatures. The potential of the junction as a thermoelectric device is
discussed.
