  TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin
reorientation transition (SRT) with temperature between 82 K and 94 K in single
crystals. In this temperature region, the N\'eel vector continuously rotates
from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K).
The SRT allows for a temperature control of distinct antiferromagnetic states
without the need for a magnetic field, making it apt for applications working
at THz frequencies. For device applications, thin films of TFO are required as
well as an electrical technique for reading out the magnetic state. Here we
demonstrate that orthorhombic TFO thin films can be grown by pulsed laser
deposition and the detection of the SRT in TFO thin films can be accessed by
making use of the all electrical spin Hall magnetoresistance (SMR), in good
agreement for the temperature range where the SRT occurs. Our results
demonstrate that one can electrically detect the SRT in insulators.
