  The role of polariton-electron scattering on the performance characteristics
of an electrically injected GaAs-based quantum well microcavity diode in the
strong coupling regime has been investigated. An electron gas is introduced in
the quantum wells by modulation doping with silicon dopants. It is observed
that polariton-electron scattering suppresses the relaxation bottleneck in the
lower polariton branch. However, it is not adequate to produce a degenerate
coherent condensate at k|| ~ 0 and coherent emission.
