  We present an inverted GaAs 2D electron gas with self-assembled InAs quantum
dots in close proximity, with the goal of combining quantum transport with
quantum optics experiments. We have grown and characterized several wafers --
using transport, AFM and optics -- finding narrow-linewidth optical dots and
high-mobility, single subband 2D gases. Despite being buried 500 nm below the
surface, the dots are clearly visible on AFM scans, allowing precise
localization and paving the way towards a hybrid quantum system integrating
optical dots with surface gate-defined nanostructures in the 2D gas.
