  We report on theoretical investigations of scattering asymmetry vs. incidence
of carriers through exchange barriers and magnetic tunnel junctions made of
semiconductors involving spin-orbit interaction. By an analytical 2?2 spin
model, we show that, when Dresselhaus interaction is included in the conduction
band of antiparallel magnetized electrodes, the electrons can undergo a large
difference of transmission depending on the sign of their incident in-plane
wavevector. In particular, the transmission is fully quenched at some points of
the Brillouin zone for specific in-plane wavevectors and not for the opposite.
Moreover, it is universally scaled by a unique function independent of the
spin-orbit strength. This particular feature is reproduced by a 14 ? 14 band k
? p model showing, in addition, corresponding effects in the valence band and
highlighting the robustness of the effect, which even persists for a single
magnetic electrode. Upon tunneling, electrons undergo an asymmetrical
deflection which results in the occurrence of a transverse current, giving rise
to a so-called Tunnel Hall Effect.
