  The role of the interface potential on the effective mass of charge carriers
is elucidated in this work. We develop a new theoretical formalism using a
spatially dependent effective mass that is related to the magnitude of the
interface potential. Using this formalism we studied Ge quantum dots (QDs)
formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering
(sputter). These samples allowed us to isolate important consequences arising
from differences in the interface potential. We found that for a higher
interface potential, as in the case of PECVD QDs, there is a larger reduction
in the effective mass, which increases the confinement energy with respect to
the sputter sample. We further understood the action of O interface states by
comparing our results with Ge QDs grown by molecular beam epitaxy. It is found
that the O states can suppress the influence of the interface potential. From
our theoretical formalism we determine the length scale over which the
interface potential influences the effective mass.
