  Low-temperature electron spin relaxation is studied by the optical
orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3}
to 5x10^17 cm^{-3}.
  A peculiarity related to the metal-to-insulator transition (MIT) is observed
in the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. In
the metallic phase, spin relaxation is governed by the Dyakonov-Perel
mechanism, while in the insulator phase it is due to anisotropic exchange
interaction and hyperfine interaction
