  Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple
nonvolatile resistive states are highly suitable for new physics and
next-generation storage electronics. However, currently reported vdW-MFTJs are
based on two types of materials, i.e., vdW ferromagnetic and ferroelectric
materials, forming a multiferroic system. This undoubtedly introduces
additional interfaces, increasing the complexity of experimental preparation.
Herein, we engineer vdW intrinsic MFTJs utilizing bilayer VS$_2$. By employing
the nonequilibrium Green's function combined with density functional theory, we
systematically investigate the influence of three types of electrodes
(including non-vdW pure metal Ag/Au, vdW metallic 1T-MoS$_2$/2H-PtTe$_2$, and
vdW ferromagnetic metallic Fe$_3$GaTe$_2$/Fe$_3$GeTe$_2$) on the electronic
transport properties of VS$_2$-based intrinsic MFTJs. We demonstrate that these
MFTJs manifest a giant electrode-dependent electronic transport characteristic
effect. Comprehensively comparing these electrode pairs, the
Fe$_3$GaTe$_2$/Fe$_3$GeTe$_2$ electrode combination exhibits optimal transport
properties, the maximum TMR (TER) can reach 10949\% (69\%) and the minimum
resistance-area product (RA) is 0.45 $\Omega$$\mu$m$^{2}$, as well as the
perfect spin filtering and negative differential resistance effects. More
intriguingly, TMR (TER) can be further enhanced to 34000\% (380\%) by applying
an external bias voltage (0.1 V), while RA can be reduced to 0.16
$\Omega$$\mu$m$^{2}$ under the influence of biaxial stress (-3\%). Our proposed
concept of designing vdW-MFTJs using intrinsic multiferroic materials points
towards new avenues in experimental exploration.
