  Employing graphene as a template, we fabricate moir\'e superlattices by
stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and
hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN or hBN/fBBLG/hBN stacks, with
a small twist angle between the graphene and one of the two hBN layers. Because
of the modulation due to the hBN, higher-generation Dirac points can emerge
with a narrow bandwidth and van Hove singularities. In the moir\'e superlattice
devices, we can therefore access the higher-generation Dirac points by in-situ
gate tuning. This study is based on our previous paper (Appl. Phys. Express 13,
035003 (2020)). Here we show more extended data by applying high magnetic
fields up to ~24 T. We also comment on the temperature dependence of the
resistivity and magnetoresistance with reference to the 'plain' BLG data for a
comparative study.
