  Tunneling of electrons through the barriers in heterostructures devices is
investigated by using the unified Transfer Matrix Method. The effect of barrier
width on electron transmission coefficients has also been examined for
different pairs of semiconductor devices of significant research interest in
current years. Such Pairs involve AlxGa1-xAs/GaAs, AlSb/InAs, and CdS/CdSe
quantum barriers with varying dimensions reduced from 20 nm to 5nm to observe
how tunneling properties are affected by scaling. The effective electron masses
in the well and barrier regions typically vary with constituent materials. It
has been shown that the transmission coefficients are significantly changed due
to the coupling. The effective mass-dependent transmission coefficients for
electron energy have been evaluated in terms of the mass discontinuity metrics.
The electron transmission coefficients for each pair of quantum structures are
plotted with the variation of its electron energy, normalized to its potential
energy. The resonant state obtained here will be beneficial for designing
detectors, optical filters, photonic-switching devices and other optoelectronic
and photonic devices.
