  It is assessed in detail both experimentally and theoretically how the
interlayer coupling of transition metal dichalcogenides controls the electronic
properties of the respective devices. Gated transition metal dichalcogenide
structures show electrons and holes to either localize in individual
monolayers, or delocalize beyond multiple layers - depending on the balance
between spin-orbit inter- action and interlayer hopping. This balance depends
on layer thickness, momentum space symmetry points and applied gate fields. A
good quantitative agreement of predictions and measurements of the quantum
confined Stark effect in gated MoS2 systems unveils intralayer excitons as
major source for the observed photoluminesence.
