  We have investigated the crystal structure and the ferroelectric properties
of BaTiO3 thin films with YBa2Cu3O7-d as the bottom and Au as the top
electrode. Epitaxial heterostructures of YBa2Cu3O7-d and BaTiO3 were prepared
by dc and rf sputtering, respectively. The crystal structure of the films was
characterised by x-ray diffraction. The ferroelectric behaviour of the BaTiO3
films was confirmed by hysteresis loop measurements using a Sawyer Tower
circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of
1.25 \muC/cm. At sub-switching fields the capacitance of the films obeys a
relation analogous to the Rayleigh law. This behaviour indicates an interaction
of domain walls with randomly distributed pinning centres. At a field of 5 MV/m
we calculate 3% contribution of irreversible domain wall motion to the total
dielectric constant.
