  Graphene is generally considered to be a strong candidate to succeed silicon
as an electronic material. However, to date, it actually has not yet
demonstrated capabilities that exceed standard semiconducting materials.
Currently demonstrated viable graphene devices are essentially limited to
micron size ultrahigh frequency analog field effect transistors and quantum
Hall effect devices for metrology. Nanoscopically patterned graphene tends to
have disordered edges that severely reduce mobilities thereby obviating its
advantage over other materials. Here we show that graphene grown on structured
silicon carbide surfaces overcomes the edge roughness and promises to provide
an inroad into nanoscale patterning of graphene. We show that high quality
ribbons and rings can be made using this technique. We also report on progress
towards high mobility graphene monolayers on silicon carbide for device
applications.
