  All-spin-based computing combining logic and nonvolatile magnetic memory is
promising for emerging information technologies. However, the realization of a
universal spin logic operation representing a reconfigurable building block
with all-electrical spin current communication has so far remained challenging.
Here, we experimentally demonstrate a reprogrammable all-electrical
multifunctional spin logic gate in a nanoelectronic device architecture
utilizing graphene buses for spin communication and multiplexing and
nanomagnets for writing and reading information at room temperature. This gate
realizes a multistate majority spin logic operation (sMAJ), which is
reconfigured to achieve XNOR, (N)AND, and (N)OR Boolean operations depending on
the magnetization of inputs. Physics-based spin circuit model is developed to
understand the underlying mechanisms of the multifunctional spin logic gate and
its operations. These demonstrations provide a platform for scalable
all-electric spin logic and neuromorphic computing in the all-spin domain
logic-in-memory architecture.
