  We study the effects of compressive and tensile biaxial strain on direct and
phonon-assisted Auger-Meitner recombination (AMR) in silicon using
first-principles calculations. We find that the application of strain has a
non-trivial effect on the AMR rate. For most AMR processes, the application of
strain increases the AMR rate. However, the recombination rate for the AMR
process involving two holes and one electron is suppressed by 38% under tensile
strain. We further analyze the specific phonon contributions that mediate the
phonon-assisted AMR mechanism, demonstrating the increased anisotropy under
strain. Our results indicate that the application of tensile strain increases
the lifetime of minority electron carriers in p-type silicon, and can be
leveraged to improve the efficiency of silicon devices.
