  High-quality free-standing InAs nanosheets are emerging layered semiconductor
materials with potentials in designing planar Josephson junction devices for
novel physics studies due to their unique properties including strong
spin-orbit couplings, large Land\'e g-factors and the two dimensional nature.
Here, we report an experimental study of proximity induced superconductivity in
planar Josephson junction devices made from free-standing InAs nanosheets. The
nanosheets are grown by molecular beam epitaxy and the Josephson junction
devices are fabricated by directly contacting the nanosheets with
superconductor Al electrodes. The fabricated devices are explored by
low-temperature carrier transport measurements. The measurements show that the
devices exhibit a gate-tunable supercurrent, multiple Andreev reflections, and
a good quality superconductor-semiconductor interface. The superconducting
characteristics of the Josephson junctions are investigated at different
magnetic fields and temperatures, and are analyzed based on the
Bardeen-Cooper-Schrieffer (BCS) theory. The measurements of ac Josephson effect
are also conducted under microwave radiations with different radiation powers
and frequencies, and integer Shapiro steps are observed. Our work demonstrates
that InAs nanosheet based hybrid devices are desired systems for investigating
forefront physics, such as the two-dimensional topological superconductivity.
