  We investigate the integer quantum Hall effect in Cd3As2 thin films under
conditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12
nm, 15 nm). In all the films, we observe the integer quantum Hall effect in the
spin-polarized lowest Landau level (filling factor {\nu} = 1) and at
spin-degenerate higher index Landau levels with even filling factors ({\nu} =
2,4,6). With increasing quantum confinement, we also observe a lifting of the
Landau level spin degeneracy at {\nu} = 3, manifest as the emergence of an
anomaly in the longitudinal and Hall resistivity. Tight-binding calculations
show that the enhanced g-factor likely arises from a combination of quantum
confinement and corrections from nearby subbands. We also comment on the
magnetic field induced transition from an insulator to a quantum Hall liquid
when the chemical potential is near the charge neutrality point.
