  We observe a resonance in the conductance of silicon tunneling devices with a
delta-doped barrier. The position of the resonance indicates that it arises
from tunneling through the B^+ state of the boron atoms of the delta-layer.
Since the emitter Fermi level in our devices is a field-independent reference
energy, we are able to directly observe the diamagnetic shift of the B^+ level.
This is contrary to the situation in magneto-optical spectroscopy, where the
shift is absorbed in the measured ionization energy.
