  Quantum memories are essential for quantum repeaters that will form the
backbone of the future quantum internet. Such memory can capture a signal state
for a controllable amount of time after which this state can be retrieved. In
this work, we theoretically investigated how atomic material and engineering
parameters affect the performance and bandwidth of a quantum memory. We have
applied a theoretical model for quantum memory operation based on the Lindblad
master equation and adiabatic quantum state manipulation. The materials
properties and their uncertainty are evaluated to determine the performance of
Raman-type quantum memories by showcasing two defects in two-dimensional
hexagonal boron nitride (hBN). We have derived a scheme to calculate the signal
bandwidth based on the material parameters as well as the maximum efficiency
that can be realized. The bandwidth depends on four factors: the signal photon
frequency, the dipole transition moments in the electronic structure, cavity
volume, and the strength of the external control electric field. As our scheme
is general and independent of materials, it can be applied to many other
quantum materials with a suitable three-level structure. We therefore provided
a promising route for designing and selecting materials for quantum memories.
Our work is therefore an important step toward the realization of a large-scale
quantum network.
