  In this work, a physics based model is developed to calculate the hole
mobility of ultra-thin-body double-gate junctionless transistors. Six-band
$k\cdot p$ Schr\"{o}dinger equation and Poisson equation are solved
self-consistently. The obtained wave-functions and energies are stored in
look-up tables. Hole mobility can be derived using the Kubo-Greenwood formula
accounting for impurity, acoustic and optical phonon, and surface roughness
scattering. Initial benchmark results are shown.
