  We propose a novel phonon assisted Auger process unique to the electronic
band structure of monolayer transition metal dichalcogenides (TMDCs), which
dominates the radiative recombination of ground state excitons in Tungsten
based TMDCs. Using experimental and DFT computed values for the exciton
energies, spin-orbit splittings, optical matrix element, and the Auger matrix
elements, we find that the Auger process begins to dominate at carrier
densities as low as $10^{9-10}~{\rm cm^{-2}}$, thus providing a plausible
explanation for the low quantum efficiencies reported for these materials.
