  Single-photon emitting devices have been identified as an important building
block for applications in quantum information and quantum communication. They
allow to transduce and collect quantum information over a long distance via
photons as so called flying qubits. In addition, substrates like silicon
carbide provides an excellent material platform for electronic devices. In this
work we combine these two features and show that one can drive single photon
emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically
designed a lateral oriented diode. We find a variety of new color centers
emitting non-classical lights in VIS and NIR range. One type of emitter can be
electrically excited, demonstrating that silicon carbide can act as an ideal
platform for electrically controllable single photon sources.
