  The non-homogeneity in the critical temperature $T_{c}$ of an Microwave
Kinetic Inductance Detector (MKID) could be caused by non-uniformity in the
deposition process of the thin superconducting film. This produces low percent
yield and frequency collision in the readout of the MKIDs. Here, we show the
homogeneity that offers Atomic Layer Deposition (ALD). We report an improvement
of up to a factor of 50 in the fractional variation of the $T_{c}$ for TiN
MKIDs fabricated with Atomic Layer Deposition in comparison with MKIDs
fabricated with sputtering. We measured the critical temperature of 48
resonators. We extracted the $T_{c}$ of the MKIDs by fitting the fractional
resonance frequency to the complex conductivity of their resonators. We
observed uniformity on the critical temperature for MKIDs belonging to the same
fabrication process, with a maximum change in the $T_{c}$ of 60 mK for MKIDs
fabricated on different wafers.
