  Perovskite chalcogenides have emerged as a new class of semiconductors with
tunable band gap in the visible-infrared region. High quality thin films are
critical to understand the fundamental properties and realize the potential
applications based on these materials. We report growth of quasi-epitaxial thin
films of quasi one-dimensional (quasi-1D) hexagonal chalcogenide BaTiS$_3$ by
pulsed laser deposition. We identified the optimal growth conditions by varying
the growth parameters such as the substrate temperature and H2S partial
pressure and examined their effects on the thin film structure. High resolution
thin film X-Ray diffraction shows strong texture in the out-of-plane direction,
whereas no evidence of in-plane relationship between the film and the substrate
is observed. Grazing incidence wide-angle X-ray scattering and scanning
transmission electron microscopy studies reveal the presence of weak epitaxial
relationships of the film and the substrate, despite a defective interface. Our
study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films
and their heterostructures with perovskite chalcogenides.
