  We report on a 203Tl and 205Tl nuclear magnetic resonance study of the chain
ternary semiconductor TlTaS3. We show that spin-lattice relaxation in this
compound is driven by two contributions, namely by interactions of nuclear
spins with thermally activated carriers and with localized electron spins. The
latter mechanism dominates at lower temperature; at that, our measurements
provide striking manifestation of the spin-diffusion-limited relaxation regime.
The experimental data obtained allow us to estimate the spin diffusion
coefficient.
