  Magnetotransport is at the center of the spintronics. Mn3Sn, an
antiferromagnet that has a noncollinear 120{\deg} spin order, exhibits large
anomalous Hall effect (AHE) at room temperature. But such a behavior has been
remained elusive in Mn3Sn films. Here we report the observation of robust AHE
up to room temperature in quasi-epitaxial Mn3Sn thin films, prepared by
magnetron sputtering. The growth of both (11-20)- and (0001)-oriented Mn3Sn
films provides a unique opportunity for comparing AHE in three different
measurement configurations. When the magnetic field is swept along (0001)
plane, such as the direction of [01-10] and [2-1-10] the films show
comparatively higher anomalous Hall conductivity than its perpendicular
counterpart ([0001]), irrespective of their respectively orthogonal current
along [0001] or [01-10]. A quite weak ferromagnetic moment of 3 emu/cm^3 is
obtained in (11-20)-oriented Mn3Sn films, guaranteeing the switching of the
Hall signals with magnetization reversal. Our finding would advance the
integration of Mn3Sn in antiferromagnetic spintronics.
