  In the quest for novel, scalable and energy-efficient computing technologies,
many non-charge based logic devices are being explored. Recent advances in
multi-ferroic materials have paved the way for electric field induced low
energy and fast switching of nano-magnets using the magneto-electric (ME)
effect. In this paper, we propose a voltage driven logic-device based on the ME
induced switching of nano-magnets. We further demonstrate that the proposed
logic-device, which exhibits decoupled read and write paths, can be used to
construct a complete logic family including XNOR, NAND and NOR gates. The
proposed logic family shows good scalability with a quadratic dependence of
switching energy with respect to the switching voltage. Further, the proposed
logic-device has better robustness against the effect of thermal noise as
compared to the conventional current driven switching of nano-magnets. A
device-to-circuit level coupled simulation framework, including magnetization
dynamics and electron transport model, has been developed for analyzing the
present proposal. Using our simulation framework, we present energy and delay
results for the proposed Magneto-Electric Spin Logic (MESL) gates.
