  In thin film ferroelectric capacitor the chemical and electronic structure of
the electrode/FE interface can play a crucial role in determining the kinetics
of polarization switching. We investigate the electronic structure of a
Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy.
The chemical, electronic and depth sensitivity of core level photoemission is
used to probe the transient response of different parts of the upper
electrode/ferroelectric interface to voltage pulse induced polarization
reversal. The linear response of the electronic structure agrees quantitatively
with a simple RC circuit model. The non-linear response due to the polarization
switch is demonstrated by the time-resolved response of the characteristic core
levels of the electrode and the ferroelectric. Adjustment of the RC circuit
model allows a first estimation of the Pt/BTO interface capacitance. The
experiment shows the interface capacitance is at least 100 times higher than
the bulk capacitance of the BTO film, in qualitative agreement with theoretical
predictions from the literature.
