  Noise-induced switching between coexisting metastable states occurs in a wide
range of far-from-equilibrium systems including micro-mechanical oscillators,
epidemiological and climate change models, and nonlinear electronic transport
in tunneling structures such as semiconductor superlattices and tunnel diodes.
In the case of tunnel diode circuits, noise-induced switching behavior is
associated with negative differential resistance in the static current-voltage
characteristics and bistability, i.e., the existence of two macroscopic current
states for a given applied voltage. Noise effects are particularly strong near
the onset and offset of bistable current behavior, corresponding to bifurcation
points in the associated dynamical system. In this paper, we show that the
tunnel diode system provides an excellent experimental platform for the
precision measurement of scaling properties of mean switching times versus
applied voltage near bifurcation points. More specifically, experimental data
confirm that the mean switching time scales logarithmically as the 3/2 power of
voltage difference over an exceptionally wide range of time scales and noise
intensities.
