  The successful detection of biomolecules by a Field Effect Transistor-based
biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio
(SNR). The detection limit of a traditional BioFET is fundamentally limited by
biomolecule diffusion, charge screening, linear charge to surface-potential
transduction, and Flicker noise. In this paper, we demonstrate that the
recently introduced transistor technology called Negative Capacitor Field
effect transistor (NCFET) offers nonlinear charge transduction and suppression
of Flicker noise to dramatically improve the SNR over classical Boltzmann
sensors. We quantify the SNR improvement by interpreting the experimental
results associated with the signal and noise characteristics of 2D MoS2-based
transistors. The combined sensitivity enhancement and noise rejection guarantee
a high SNR of the NCBioFET, making this device a promising candidate for
realizing advanced integrated nanobiosensors.
