  Recently, a single atom transistor was deterministically fabricated using
phosphorus in Si by H-desorption lithography with a scanning tunneling
microscope (STM). This milestone in precision, achieved by operating the STM in
the conventional tunneling mode, typically utilizes very slow
($\sim\!10^2~\mathrm{nm^2/s}$) patterning speeds. By contrast, using the STM in
a high voltage ($>10~\mathrm{V}$) field emission mode, patterning speeds can be
increased by orders of magnitude to $\gtrsim\!10^4~\mathrm{nm^2/s}$. We show
that the rapid patterning negligibly affects the functionality of relatively
large micron-sized features, which act as contacting pads on these devices. For
nanoscale structures, we show that the resulting transport is consistent with
the donor incorporation chemistry enhancing the device definition to a scale of
$10~\mathrm{nm}$ even though the pattering spot size is $40~\mathrm{nm}$.
