  Deviations from randomicity in In(x)Ga(1-x) As semiconductor alloys induced
by elastic effects are investigated within the Keating potential. Our model is
based on Monte Carlo simulations on large (4096 atoms) supercells, performed
with two types of boundary conditions: Fully periodic boundary conditions
represent the bulk, while periodic boundary conditions along the x and y
directions and a free surface in the z direction simulate the epitaxial growth
environment. We show that In-In correlations identified in the bulk tend to be
enhanced in the epitaxially grown samples.
