  We report a detailed ab initio study of two superlattice heterostructures,
one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This
alloy part of the heterostructures is a topological semimetal. The other
component of each system is a semiconductor, zincblende-InSb, and
wurtzite-InAs. Both heterostructures are semiconductors. Our theoretical
analysis predicts that the variation in the thickness of the InSb layer in
InSb/InSb_(0.5)As_(0.5) heterostructure renders altered band gaps with
different characteristics (i.e. direct or indirect). The study holds promise
for fabricating heterostructures, in which the modulation of the thickness of
the layers changes the number of carrier pockets in these systems.
