  Voltage-tunable superconductor-semiconductor devices offer a unique platform
to realize dynamic tunability in superconducting quantum circuits. By
galvanically connecting a gated InAs-Al Josephson junction to a coplanar
waveguide resonator, we demonstrate the use of a wide-range gate-tunable
superconducting element. We show that the resonant frequency is controlled via
a gate-tunable Josephson inductance and that the non-linearity of the
voltage-controlled InAs-Al junction is non-dissipative as is the case with
conventional Al-AlO$_{x}$ junctions. As the gate voltage is decreased, the
inductive participation of the junction increases up to $44\%$, resulting in
the resonant frequency being tuned by over 2 GHz. Utilizing the wide tunability
of the device, we demonstrate that two resonant modes can be adjusted such that
they strongly hybridize, exhibiting an avoided level crossing with a coupling
strength of 51 MHz. Implementing such voltage-tunable resonators is the first
step toward realizing wafer-scale continuous voltage control in superconducting
circuits for qubit-qubit coupling, quantum-limited amplifiers, and quantum
memory platforms.
