  Graphene holds a great promise for a number of diverse future applications,
in particular related to its easily tunable doping and Fermi level by
electrostatic gating. However, as of today, most implementations rely on
electrical doping via the application of continuous large voltages to maintain
the desired doping. We show here how graphene can be implemented with
conventional semiconductor flash memory technology in order to make
programmable doping possible, simply by the application of short gate pulses.
We also demonstrate how this approach can be used for a memory device, and also
show potential neuromorphic capabilities of the device. Finally, we show that
the overall performance can be significantly enhanced by illuminating the
device with UV radiation. Our approach may pave the way for integrating
graphene in CMOS technology memory applications, and our device design could
also be suitable for large scale neuromorphic computing structures.
