  We report on a semi-empirical tight binding model for 3C-SiC including the
effect of sp3d5s* orbitals and spin-orbital coupling. In this work, we
illustrate in detail the method to develop such a model for semiconductors with
zincblende structure, based on Slater-Koster integrals, and we explain the
optimization method used to fit the experimental results with such a model.
This method shows high accuracy for the evaluation of 3C-SiC band diagram both
in terms of the experimental energy levels at high symmetry points and the
effective masses.
