  We show that a scanning capacitance microscope (SCM) can image buried
delta-doped donor nanostructures fabricated in Si via a recently developed
atomic-precision scanning tunneling microscopy (STM) lithography technique. A
critical challenge in completing atomic-precision nanoelectronic devices is to
accurately align mesoscopic metal contacts to the STM defined nanostructures.
Utilizing the SCMs ability to image buried dopant nanostructures, we have
developed a technique by which we are able to position metal electrodes on the
surface to form contacts to underlying STM fabricated donor nanostructures with
a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements
confirm successful placement of the contacts to the donor nanostructures.
