  The surface electronic properties of the important topological insulator
Bi2Te3 are shown to be robust under an extended surface preparation procedure
which includes exposure to atmosphere and subsequent cleaning and
recrystallization by an optimized in-situ sputter-anneal procedure under ultra
high vacuum conditions. Clear Dirac-cone features are displayed in
high-resolution angle-resolved photoemission spectra from the resulting
samples, indicating remarkable insensitivity of the topological surface state
to cleaning-induced surface roughness.
