  The Heusler alloy is used as an electrode of magnetic tunneling junctions.
The junctions are deposited by magnetron dc sputtering using shadow mask
techniques with AlO_{x} as a barrier and cobalt as counter electrode.
Measurements of the magnetoresistive differential conductivity in a temperature
range between 4K and 300K are shown. An analysis of the barrier properties
applying the Simmons model to the bias dependent junction conductivity is
performed. VSM measurements were carried out to examine the magnetic properties
of the samples.
