  In hopping magnetoresistance of doped insulators, an applied magnetic field
shrinks the electron (hole) s-wave function of a donor or an acceptor and this
reduces the overlap between hopping sites resulting in the positive
magnetoresistance quadratic in a weak magnetic field, B. We extend the theory
of hopping magnetoresistance to states with nonzero orbital momenta. Different
from s-states, a weak magnetic field expands the electron (hole) wave functions
with positive magnetic quantum numbers, m > 0, and shrinks the states with
negative m in a wide region outside the point defect. This together with a
magnetic-field dependence of injection/ionization rates results in a negative
weak-field magnetoresistance, which is linear in B when the orbital degeneracy
is lifted. The theory provides a possible explanation of a large low-field
magnetoresistance in disordered pi-conjugated organic materials (OMAR).
