  Robust porous silicon substrates were employed for generating interconnected
networks of superconducting ultrathin Nb nanowires. Scanning electron
microscopy analysis was performed to investigate the morphology of the samples,
which constitute of polycrystalline single wires with grain size of about 10
nm. The samples exhibit nonzero resistance over a broad temperature range below
the critical temperature, fingerprint of phase slippage processes. The
transport data are satisfactory reproduced by models describing both thermal
and quantum fluctuations of the superconducting order parameter in thin
homogeneous superconducting wires.
