  We describe a simple and scalable method for the transfer of CVD graphene for
the fabrication of field effect transistors. This is a dry process that uses a
modified RCA cleaning step to improve the surface quality. In contrast to
conventional fabrication routes where lithographic steps are performed after
the transfer, here graphene is transferred to a pre-patterned substrate. The
resulting FET devices display nearly zero Dirac voltage, and the contact
resistance between the graphene and metal contacts is on the order of 910 +-
340 Ohm-micrometer. This approach enables formation of conducting graphene
channel lengths up to one millimeter. The resist-free transfer process provides
a clean graphene surface that is promising for use in high sensitivity graphene
FET biosensors.
