  We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001)
substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due
to lattice mismatch. The thin films have a $\omega$ full width half max of
$7.7^{''}$ according to high resolution X-ray diffraction, and a root mean
square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy.
Magnetic and electrical properties are found to be consistent with reported
values from bulk samples. We find a N\'eel temperature of $62~\text{K}$, a
Curie-Weiss temperature of $-65~\text{K}$ and an effective moment of
$5.9~\mu_{\text{B}}/\text{f.u.}$. Transport measurements confirm the
antiferromagetic transition and show a residual resistivity at $4~\text{K}$ of
$35~\mu\Omega\cdot \text{cm}$.
