  We report the magnetic and transport properties of Ga1-xMnxP synthesized via
ion implantation followed by pulsed laser melting over a range of x, namely
0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the
ferromagnetic Curie temperature with x associated with the hole-mediated
ferromagnetic phase while thermal annealing above 300 C leads to a quenching of
ferromagnetism that is accompanied by a reduction of the substitutional
fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is
non-metallic over the entire composition range. At the lower temperatures over
which the films are ferromagnetic, hole transport occurs via hopping conduction
in a Mn-derived band; at higher temperatures it arises from holes in the
valence band which are thermally excited across an energy gap that shrinks with
x.
