  In this paper, we present a Pt/Al multilayer stack-based ohmic contact
metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated
to assess the electrical properties of the proposed metallization. The
fabricated stack shows excellent stability after more than 100 hours of
continuous aging at 600oC in air. Measured I-V characteristics of the
fabricated samples show excellent linearity after the aging. The Pt/Al-based
metallization shows great potential for future device and sensor applications
in extreme environment conditions.
