  We study the transport of spin polarized electrons in n-GaAs using spatially
resolved continuous wave Faraday rotation. From the measured steady state
distribution, we determine spin relaxation times under drift conditions and, in
the presence of strain, the induced spin splitting from the observed spin
precession. Controlled variation of strain along [110] allows us to deduce the
deformation potential causing this effect, while strain along [100] has no
effect. The electric field dependence of the spin lifetime is explained
quantitatively in terms of an increase of the electron temperature.
