  Graphene field-effect transistors are integrated with solution-processed
multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The
resulting devices exhibit low-operating voltage (2 V), negligible hysteresis,
current saturation with intrinsic gain > 1.0 in vacuum (pressure < 2 x 10-5
Torr), and overall improved performance compared to control devices on
conventional SiO2 gate dielectrics. Statistical analysis of the field-effect
mobility and residual carrier concentration demonstrate high spatial uniformity
of the dielectric interfacial properties and graphene transistor
characteristics over full 3 inch wafers. This work thus establishes SANDs as an
effective platform for large-area, high-performance graphene electronics.
