  Silicon pixel modules employing n-in-p planar sensors with an active
thickness of 200 $\mu$m, produced at CiS, and 100-200 $\mu$m thin active/slim
edge sensor devices, produced at VTT in Finland have been interconnected to
ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high
energy physics collider experiments to ensure radiation hardness at high
fluences. Moreover, the active edge technology of the VTT production maximizes
the sensitive region of the assembly, allowing for a reduced overlap of the
modules in the pixel layer close to the beam pipe. The CiS production includes
also four chip sensors according to the module geometry planned for the outer
layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The
modules have been characterized using radioactive sources in the laboratory and
with high precision measurements at beam tests to investigate the hit
efficiency and charge collection properties at different bias voltages and
particle incidence angles. The performance of the different sensor thicknesses
and edge designs are compared before and after irradiation up to a fluence of
$1.4\times10^{16}n_{eq}/cm^{2}$.
