  We present experimental and numerical studies of a light-emitting transistor
comprising two quasi-lateral junctions between a two-dimensional electron and
hole gas. These lithographically defined junctions are fabricated by etching of
a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and
holes can be directed to the same area by drain and gate voltages, defining a
recombination zone tunable in size and position. It could therefore provide an
architecture for probing low-dimensional devices by analysing the emitted light
of the recombination zone.
