  Diamond is a promising platform for the development of technological
applications in quantum optics and photonics. The quest for color centers with
optimal photo-physical properties has led in recent years to the search for
novel impurity-related defects in this material. Here, we report on a
systematic investigation of the photo-physical properties of two He-related
(HR) emission lines at 535 nm and 560 nm created in three different diamond
substrates upon implantation with 1.3 MeV He+ ions and subsequent annealing.
The spectral features of the HR centers were studied in an "optical grade"
diamond substrate as a function of several physical parameters, namely the
measurement temperature, the excitation wavelength and the intensity of
external electric fields. The emission lifetimes of the 535 nm and 560 nm lines
were also measured by means of time-gated photoluminescence measurements,
yielding characteristic decay times of (29 +- 5) ns and (106 +- 10) ns,
respectively. The Stark shifting of the HR centers under the application of an
external electrical field was observed in a CVD diamond film equipped with
buried graphitic electrodes, suggesting a lack of inversion symmetry in the
defects' structure. Furthermore, the photoluminescence mapping under 405 nm
excitation of a "detector grade" diamond sample implanted at a 1x1010 cm-2 He+
ion fluence enabled to identify the spectral features of both the HR emission
lines from the same localized optical spots. The reported results provide a
first insight towards the understanding of the structure of He-related defects
in diamond and their possible utilization in practical applications
