  The first-principle theory of electron dephasing by disorder-induced two
state fluctuators is developed. There exist two mechanisms of dephasing. First,
dephasing occurs due to direct transitions between the defect levels caused by
inelastic electron-defect scattering. The second mechanism is due to violation
of the time reversal symmetry caused by time-dependent fluctuations of the
scattering potential. These fluctuations originate from an interaction between
the dynamic defects and conduction electrons forming a thermal bath. The first
contribution to the dephasing rate saturates as temperature decreases. The
second contribution does not saturate, although its temperature dependence is
rather weak, $\propto T^{1/3}$. The quantitative estimates based on the
experimental data show that these mechanisms considered can explain the weak
temperature dependence of the dephasing rate in some temperature interval.
However, below some temperature dependent on the model of dynamic defects the
dephasing rate tends rapidly to zero. The relation to earlier studies of the
dephasing caused by the dynamical defects is discussed.
