  The quadrant silicon detector, a kind of passivated implanted planar silicon
detector with quadrant structure on the junction side, gained its wide
application in charged particle detection. In this paper, the manufacturing
procedure, performance test and results of the quadrant silicon detector
developed recently at the China Institute of Atomic Energy are presented. The
detector is about 300 $\mu$m thick with a 48$\times$48 mm$^{2}$ active area.
The leakage current under full depletion bias voltage of -16 V is about 2.5 nA,
and the raising time is better than 160 ns. The energy resolution for 5.157 MeV
$\alpha$-particle is around the level of $1\%$. Charge sharing effects between
the neighboring quads, leading to complicated correlations between two quads,
were observed when $\alpha$ particles illuminated on the junction side. It is
explained as a result of distortion of electric field of inter-quad region.
Such events is only about $0.6\%$ of all events and can be neglected in an
actual application.
