  We present new results obtained by field effect measurements on insulating
granular Al thin films. First, reproducible and stable conductance fluctuations
are seen in micron size samples as a function of gate voltage. The anomalous
field effect and its slow relaxation already known to exist in macroscopic
samples are shown to still exist in small samples and to have no influence on
the fluctuations pattern. Secondly, "true" aging is demonstrated, i.e. the
anomalous field effect relaxation depends on the time elapsed since the
cooling, the longer this time the longer it takes for the system to react to a
gate voltage change. Interpretations and implications of these findings are
discussed.
