  This paper presents a first study of the performance of a novel 2D
position-sensitive microstrip detector, where the resistive charge division
method was implemented by replacing the metallic electrodes with resistive
electrodes made of polycrystalline silicon. A characterization of two
proof-of-concept prototypes with different values of the electrode resistivity
was carried out using a pulsed Near Infra-Red laser. The experimental data were
compared with the electrical simulation of the sensor equivalent circuit
coupled to simple electronics readout circuits. The good agreement between
experimental and simulation results establishes the soundness of resistive
charge division method in silicon microstrip sensors and validates the
developed simulation as a tool for the optimization of future sensor
prototypes. Spatial resolution in the strip length direction depends on the
ionizing event position. The average value obtained from the protype analysis
is close to 1.2% of the strip length for a 6 MIP signal.
