  Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted
attention for use in next-generation MR devices. The SOT devices are known to
exhibit different write properties based on the relative angle between the
magnetization direction of the free layer and the write-current direction.
However, few studies that compare the write properties of each type have been
reported. In this study, we measured the external perpendicular-magnetic field
dependence of the threshold write current density and the write current
switching probability using two types of in-plane magnetization SOT-MR devices.
