  Electronic properties of the single crystal of GdV6Sn6, where non-magnetic
V-kagome layers are separated by magnetic Gd-triangular lattice, are
investigated. GdV6Sn6 exhibits unique magnetotransport properties at
low-temperature such as non-linear Hall resistivity and increase of resistance
R in magnetic field H as R ~ H^0.75 up to 56 T with Shubnikov-De Haas
oscillations. Investigation of the non-magnetic analogue YV6Sn6 and the first
principles calculations reveal these properties are relevant to the bands
arising from the V-kagome layer. A magnetic transition at 5 K in GdV6Sn6
modifies the transport properties, pointing to a coupling between Gd-spins on
the triangular lattice and carriers in the V-kagome layer.
