  Silicon color centers have recently emerged as promising candidates for
commercial quantum technology, yet their interaction with electric fields has
yet to be investigated. In this paper, we demonstrate electrical manipulation
of telecom silicon color centers by fabricating lateral electrical diodes with
an integrated G center ensemble in a commercial silicon on insulator wafer. The
ensemble optical response is characterized under application of a
reverse-biased DC electric field, observing both 100% modulation of
fluorescence signal, and wavelength redshift of approximately 1.4 GHz/V above a
threshold voltage. Finally, we use G center fluorescence to directly image the
electric field distribution within the devices, obtaining insight into the
spatial and voltage-dependent variation of the junction depletion region and
the associated mediating effects on the ensemble. Strong correlation between
emitter-field coupling and generated photocurrent is observed. Our
demonstration enables electrical control and stabilization of semiconductor
quantum emitters.
