  In this work, the electrical properties of monolayer InSb in the presence of
biaxial strain using density functional theory are investigated. Here, we first
explore the band structure of InSb with and without spin-orbit coupling (SOC)
consideration. The electron and hole effective mass modify with SOC
consideration. The electron and hole effective masses lowered two and ten
times, respectively. The location of valleys in conduction and valence band for
various strains are explored, and the corresponding effective masses are
reported. A lower effective mass is obtained for both electron and hole with
applying tensile strain, whereas, the bandgap closes for large tensile strain.
A numeric fitting has applied to effective mass versus strain, and an equation
for every curve is reported. Finally, the work function of this material for
different strains is obtained.
