  The study of heat transport in micro/nanoscale structures due to their
application, especially in Nanoelectronics, is a matter of interest. In other
words, the precise simulation of the temperature distribution inside the
transistors is consequential in designing and building more reliable devices
reaching lower maximum temperatures during the operation. The present study
constitutes a framework for micro/nanoscale heat transport study which leads to
the calculation of accurate temperature/heat flux profiles with low
computational cost. The newly non-dimensional parameter {\gamma}, presenting
the strength of the nonlocality, is utilized through the nonlocal DPL modeling
(NDPL). Alongside the calculating nonlocality coefficient, the factors also
appearing in DPL, including the temperature jump, phase lagging ratio, are
revisited. The factor {\gamma} is found to have a linear relationship with
Knudsen (Kn) number, being 3.5 for Kn=10 and 0.035 for Kn=0.1. Although the
nonlocality is bold for the large Knudsen numbers, it also plays a vital role
for low Knudsen number structures especially at earlier times. Further, It is
obtained that intruding {\gamma} is critical for obtaining accurate temperature
and heat flux distributions which are very close to the practical results of
Phonon Boltzmann equation.
