  The thermopower and Nernst-Ettingshausen (NE) effect in degenerate
semiconductors and semimetals placed in high electric and magnetic fields are
calculated by taking into account the heating of both electrons and phonons as
well as their thermal and mutual drags.
  The magnetic and electric field dependences of the thermoelectric power and
the transverse NE voltage are found in analytical forms. It is shown that in
weak and high transverse magnetic fields, the electronic and phonon parts of NE
coefficients change their sign for some scattering mechanisms.
