  2D ferroelectric \{beta}-InSe/graphene heterostructure was fabricated by
mechanical exfoliation, and the carrier dynamics crossing the heterostructure
interface has been systematically investigated by Raman, photoluminescence and
transient absorption measurements. Due to the efficient interfacial photo
excited electron transfer and photogating effect from trapped holes, the
heterostructure devices demonstrate superior performance with maximum
responsivity of 2.12*10e4 A/W, detectivity of 1.73*10e14 Jones and fast
response time (241 us) under {\lambda} = 532 nm laser illumination.
Furthermore, the photo responses influenced by ferroelectric polarization field
are investigated. Our work confirms ferroelectric \{beta}-InSe/graphene
heterostructure as an outstanding material platform for sensitive
optoelectronic application.
