  Here, we report the crystal growth, physical and transport properties of
Bi1-xSbx (x = 0.05, 0.1 and 0.15) topological insulator. Single crystals of
Bi1-xSbx (x = 0.05, 0.1 and 0.15) were grown by melting bismuth and antimony
together using the facile self flux method. The XRD measurements displayed
highly indexed 00l lines and confirmed the crystalline nature as well as the
rhombohedral structure of the Bi1-xSbx (x = 0.05, 0.1 and 0.15) crystals. Raman
spectroscopy measurements for Bi1-xSbx system revealed four peaks within the
spectral range of 10 to 250 cm-1 namely A1g and Eg modes corresponding to Bi-Bi
and Sb-Sb vibrations. Scanning electron microscopy (SEM) and energy dispersive
Temperature dependent electrical resistivity curves with and without applied
magnetic field exhibited a metallic behaviour and linear non-saturating
magneto-resistance (MR) respectively for all the antimony (Sb) concentrations
of x = 0.05, 0.1 and 0.15. The lowest Sb concentration sample with x = 0.05
(Bi0.95Sb0.05) exhibited the highest MR value of about 1400%, followed by x =
0.1 and 0.15 samples (Bi0.9Sb0.1 and Bi0.85Sb0.05) with MR values reaching up
to 500% and 110% respectively at 2K and 6Tesla applied field. The
magneto-conductivity (MC) is fitted to the HLN (Hikami Larkin Nagaoka) equation
and it is found that the charge conduction mechanism is mainly dominated by WAL
(weak anti-localization) along with a small contribution from WL (weak
localization) effect. Summarily, the short letter discusses the synthesis,
interesting transport and magneto-transport properties of Bi1-xSbx (x = 0.05,
0.1 and 0.15), which could be useful in understanding the fascinating
properties of topological insulators and their technological applications.
