  In this paper, we report on the photoelectronic properties of TPD studied in
sandwich geometry. In particular, we have obtained from both forward and
reverse bias measurements the "mew-tau" product for holes in TPD. "mew" is the
hole mobility and "tau" the carrier trapping time. The "mew-tau" product is a
measure of the electronic quality of the material and allows a quantitative
comparison of different samples. We have carried out numerical simulations to
understand the photocurrent in these structures. We show that in reverse bias,
the photocurrent (PC) is due to bulk. The carrier generation is governed by
field assisted exciton dissociation at electric fields greater than 10^6 V/cm.
At lower fields the generation of carriers occurs spontaneously in the bulk of
the sample. In forward bias, the photocurrent is due to exciton dissociation at
the ITO contact. We also obtain a "mew-tau" product for holes from forward bias
PC measurements which is in agreement with the value obtained from reverse bias
measurements. Based on our experiments, we demonstrate that TPD in a sandwich
structure is a good candidate for cheap large area solar blind UV detector
arrays.
