  The search for inversion asymmetric topological insulators (IATIs) persists
as an effect for realizing new topological phenomena. However, so for only a
few IATIs have been discovered and there is no IATI exhibiting a large band gap
exceeding 0.6 eV. Using first-principles calculations, we predict a series of
new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs
preserve extraordinary large bulk band gaps which are well above
room-temperature, allowing for viable applications in room-temperature
spintronic devices. More importantly, most of these systems display large bulk
band gaps that far exceed 0.6 eV and, part of them even are up to ~1 eV, which
are larger than any IATIs ever reported. The nontrivial topological situation
in these systems is confirmed by the identified band inversion of the band
structures and an explicit demonstration of the topological edge states.
Interestingly, the nontrivial band order characteristics are intrinsic to most
of these materials and are not subject to spin-orbit coupling. Owning to their
asymmetric structures, remarkable Rashba spin splitting is produced in both the
valence and conduction bands of these systems. These predictions strongly
revive these new systems as excellent candidates for IATI-based novel
applications.
