  Graphene nanomeshes (GNM's) formed by the creation of pore superlattices in
graphene, are a possible route to graphene-based electronics due to their
semiconducting properties, including the emergence of fractional eV band gaps.
The utility of GNM's would be markedly increased if a scheme to stably and
controllably dope them was developed. In this work, a chemically-motivated
approach to GNM doping based on selective pore-perimeter passivation and
subsequent ion chelation is proposed. It is shown by first-principles
calculations that ion chelation leads to stable doping of the passivated GNM's
-- both {\it n}- and {\it p}-doping are achieved within a rigid-band picture.
Such chelated or ``crown'' GNM structures are stable, high mobility
semiconducting materials possessing intrinsic doping-concentration control;
these can serve as building blocks for edge-free graphene nanoelectronics
including GNM-based complementary metal oxide semiconductor (CMOS)-type logic
switches.
