  Excess micromotion is detrimental to accurate qubit control of trapped ions,
thus measuring and minimizing it is crucial. In this paper, we present a simple
approach for measuring and suppressing excess micromotion of trapped ions by
leveraging the existing laser-driven qubit transition scheme combined with
direct scanning of dc voltages. The compensation voltage is deduced by
analyzing the Bessel expansion of a scanned qubit transition rate. The method
provides a fair level of sensitivity for practical quantum computing
applications, while demanding minimal deviation of trap condition. By
accomplishing compensation of excess micromotion in the qubit
momentum-excitation direction, the scheme offers an additional avenue for
excess micromotion compensation, complementing existing compensation schemes.
