  We present a photonic structure where Mie, Tamm, and surface plasmon optical
modes can be tailored to enhance the brightness of an embedded single-photon
emitter. Contrary to most proposals, the structure is designed for excitation
and collection through the substrate side. The front surface can be used
instead to arrange metal contacts which serve both, as electrical gates and
optical mirrors. The design is particularized for InGaAs QDs on GaAs resulting
in an outcoupled single-photon rate exceeding 3 GHz in a narrow cone of NA =
0.17. The fabrication tolerances are also discussed.
