  CuMnAs with perpendicular magnetic anisotropy is proposed as an active
material for antiferromagnetic memory. Information can be stored in the
antiferromagnetic domain state, while writing and readout can rely on the
existence of the surface magnetization. It is predicted, based on
first-principles calculations, that easy-axis anisotropy can be achieved in
bulk CuMnAs by substituting a few percent of As atoms by Ge, Si, Al, or B. This
effect is attributed to the changing occupation of certain electronic bands
near the Fermi level induced by the hole doping. The calculated temperature
dependence of the magnetic anisotropy does not exhibit any anomalies. Thin
CuMnAs(001) films are also predicted to have perpendicular magnetic anisotropy.
