  This paper presents a method for determining the conductance matrix of multi
terminal semiconductor structures with edge channels. This method appears to be
applied within frameworks of the ordinary Landauer - uttiker formalism for the
carrier transport analysis in the regime of both the quantum Hall Effect and
the quantum spin Hall Effect. The proposed method proves to take into account
principally the contribution of the probes resistance in the formation of the
matrix conductance elements. Finally, the possibilities of the practical
application of this method to develop new versions of analog cryptographic
devices are discussed.
