  We demonstrate that the spin of optically addressable point defects can be
coherently driven with AC electric fields. Based on magnetic-dipole forbidden
spin transitions, this scheme enables spatially confined spin control, the
imaging of high-frequency electric fields, and the characterization of defect
spin multiplicity. While we control defects in SiC, these methods apply to spin
systems in many semiconductors, including the nitrogen-vacancy center in
diamond. Electrically driven spin resonance offers a viable route towards
scalable quantum control of electron spins in a dense array.
