  The reflection spectrum of a multiple quantum well structure with an inserted
defect well is considered. The defect is characterized by the exciton frequency
different from that of the host's wells. It is shown that for relatively short
structures, the defect produces significant modifications of the reflection
spectrum, which can be useful for optoelectronic applications. Inhomogeneous
broadening is shown to affect the spectrum in a non-trivial way, which cannot
be described by the standard linear dispersion theory. A method of measuring
parameters of both homogeneous and inhomogeneous broadenings of the defect well
from a single CW reflection spectrum is suggested.
