  In this paper we present NANOTCAD2D, a code for the simulation of the
electrical properties of semiconductor-based nanoelectronic devices and
structures in two-dimensional domains. Such code is based on the solution of
the Poisson/Schr\"odinger equation with density functional theory and of the
continuity equation of the ballistic current. NANOTCAD2D can be applied to
structures fabricated on III-IV, strained-silicon and silicon-germanium
heterostructures, CMOS structures, and can easily be extended to new materials.
In particular, in the case of SiGe heterostructures, it computes the effects of
strain on the energy band profiles. The effects of interface states at the
air/semiconductor interfaces, particularly significant in the case of devices
obtained by selective etching, are also properly taken into account.
