  We study the superconductor-insulator transition in nanohole ultrathin films
in a transverse magnetic field by numerical simulation of a Josephson-junction
array model. Geometrical disorder due to the random location of nanoholes in
the film corresponds to random flux in the array model. Monte Carlo simulation
in the path-integral representation is used to determine the critical behavior
and the universal resistivity at the transition as a function of disorder and
average number of flux quanta per cell, $f_o$. The resistivity increases with
disorder for noninteger $ f_o$ while it decreases for integer $ f_o$, and
reaches a common constant value in a vortex-glass regime above a critical value
of the flux disorder $D_f^c$. The estimate of $D_f^c$ and the resistivity
increase for noninteger $ f_o$ are consistent with recent experiments on
ultrathin superconducting films with positional disordered nanoholes.
