  Off-state current leakage and switching delay has become the main challenge
for continued complementary metal-oxide-semiconductor (CMOS) technology
scaling. Previous work proposes a "see-saw" relay structure to mimic the
operation of CMOS. This paper presents a novel single-pole double-throw (SPDT)
switch structure based on AlN piezoelectric cantilever beam to improve the
former "see-saw" relay structure. Geometry parameters are given and key switch
parameters such as actuation voltage, switching time and contact force have
been calculated and compared with previous "see-saw" relay structure. Analysis
and design process is shown and micro-fabrication process is described as well.
