  Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay
of the spin Hall effect, Hanle-type spin precession, and spin-dependent
scattering at the top/bottom surfaces in a heavy metal controls the effect. In
this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface
Rashba field created by a strong electric field at the interface between the
ionic gate and Pt plays the dominant role in the modulation. This finding can
facilitate investigations of gate-tunable, spin-related effects and fabrication
of spin devices.
