  We report on study of electrical and structural properties of InSb/GaAs(001)
heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong
anisotropy of electron transport parameters measured at a low magnetic field
has been found, whereas the electrical transport through the InSb bulk layer
studied by Shubnikov-de Haas oscillations is shown to be independent of the
crystallographic directions. The low-field electrical anisotropy of the InSb
films appears to be governed by two competitive anisotropic effects: influence
of spontaneously formed In nanoclusters inhomogeneously distributed within the
InSb layers and conductivity through the near-interface layer with high
anisotropic density of extended defects.
