  An extensive theoretical study is performed for wide bandgap crystalline
oxides and nitrides, namely, SiO_{2}, GeO_{2}, Al_{2}O_{3}, Si_{3}N_{4}, and
Ge_{3}N_{4}. Their important polymorphs are considered which are for SiO_{2}:
$\alpha$-quartz, $\alpha$- and $\beta$-cristobalite and stishovite, for
GeO_{2}: $\alpha$-quartz, and rutile, for Al_{2}O_{3}: $\alpha$-phase, for
Si_{3}N_{4} and Ge_{3}N_{4}: $\alpha$- and $\beta$-phases. This work
constitutes a comprehensive account of both electronic structure and the
elastic properties of these important insulating oxides and nitrides obtained
with high accuracy based on density functional theory within the local density
approximation. Two different norm-conserving \textit{ab initio}
pseudopotentials have been tested which agree in all respects with the only
exception arising for the elastic properties of rutile GeO_{2}. The agreement
with experimental values, when available, are seen to be highly satisfactory.
The uniformity and the well convergence of this approach enables an unbiased
assessment of important physical parameters within each material and among
different insulating oxide and nitrides. The computed static electric
susceptibilities are observed to display a strong correlation with their mass
densities. There is a marked discrepancy between the considered oxides and
nitrides with the latter having sudden increase of density of states away from
the respective band edges. This is expected to give rise to excessive carrier
scattering which can practically preclude bulk impact ionization process in
Si_{3}N_{4} and Ge_{3}N_{4}.
