  The temperature dependence of the electrical resistivity and
magnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has been
investigated. The electrical resistivity between 5 and 300 K in the fully
ferromagnetic state, obtained by applying a field beyond the saturation field
(H_sat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-induced
transition, shows evidence of spin-disorder resistivity as in crystalline Fe
and an s-d scattering contribution (as in 3d metals and alloys). The sublattice
magnetization m(T) in these multilayers has been calculated in terms of the
planar and interlayer exchange energies. The additional spin-dependent
scattering \Delta \rho (T) = \rho(T,H=0)_AF - \rho(T,H=H_sat)_FM in the AF
state over a wide range of temperature is found to be proportional to the
sublattice magnetization, both \Delta \rho(T) and m(T) reducing along with the
antiferromagnetic fraction. At intermediate fields, the spin-dependent part of
the electrical resistivity (\rho_s (T)) fits well to the power law \rho_s (T) =
b - cT^\alpha where c is a constant and b and \alpha are functions of H. At low
fields \alpha \approx 2 and the intercept b decreases with H much the same way
as the decrease of \Delta \rho (T) with T. A phase diagram (T vs. H_sat) is
obtained for the field- induced AF to FM transition. Comparisons are made
between the present investigation and similar studies using dc magnetron
sputtered and molecular beam epitaxy (MBE) grown Fe-Cr multilayers.
