  We report a non-contact method for conductivity and sheet resistance
measurements of graphene samples using a high Q microwave dielectric resonator
perturbation technique, with the aim of fast and accurate measurement of
microwave conductivity and sheet resistance of monolayer and few layers
graphene samples. The dynamic range of the microwave conductivity measurements
makes this technique sensitive to a wide variety of imperfections and
impurities and can provide a rapid non-contacting characterisation method.
Typically the graphene samples are supported on a low-loss dielectric
substrate, such as quartz, sapphire or SiC. This substrate is suspended in the
near-field region of a small high Q sapphire puck microwave resonator. The
presence of the graphene perturbs both centre frequency and Q value of the
microwave resonator. The measured data may be interpreted in terms of the real
and imaginary components of the permittivity, and by calculation, the
conductivity and sheet resistance of the graphene. The method has great
sensitivity and dynamic range. Results are reported for graphene samples grown
by three different methods: reduced graphene oxide (GO), chemical vapour
deposition (CVD) and graphene grown epitaxially on SiC. The latter method
produces much higher conductivity values than the others.
