  Qubit information processors are increasing in footprint but currently rely
on e-beam lithography for patterning the required Josephson junctions (JJs).
Advanced optical lithography is an alternative patterning method, and we report
on the development of transmon qubits patterned solely with optical
lithography. The lithography uses 193 nm wavelength exposure and 300-mm large
silicon wafers. Qubits and arrays of evaluation JJs were patterned with process
control which resulted in narrow feature distributions: a standard deviation of
0:78% for a 220 nm linewidth pattern realized across over half the width of the
wafers. Room temperature evaluation found a 2.8-3.6% standard deviation in JJ
resistance in completed chips. The qubits used aluminum and titanium nitride
films on silicon substrates without substantial silicon etching. T1 times of
the qubits were extracted at 26 - 27 microseconds, indicating a low level of
material-based qubit defects. This study shows that large wafer optical
lithography on silicon is adequate for high-quality transmon qubits, and shows
a promising path for improving many-qubit processors.
