  Strongly correlated systems containing d/f-electrons present a challenge to
conventional density functional theory (DFT), such as the widely used local
density approximation (LDA) or generalized gradient approximation (GGA). In
this work, we developed a doubly screened Coulomb correction (DSCC) approach to
perform on-site Coulomb interaction correction for strongly correlated
materials. The on-site Coulomb interaction between localized d/f-electrons is
determined from a model dielectric function that includes both the static
dielectric and the Thomas-Fermi screening. All parameters of the dielectric
model are efficiently obtained from self-consistent calculations. We applied
DSCC to simulate the electronic and magnetic properties of typical 3d, 4f and
5f strongly correlated systems. The results show that the accuracy of DSCC is
comparable to hybrid functionals, but an order of magnitude faster. In
addition, DSCC can reflect the difference in the Coulomb interaction of the
same element between metallic and insulating situations, similar to the popular
but computationally expensive constrained random phase approximation (cRPA)
approach. This feature suggests that DSCC is also a promising method for
simulating Coulomb interaction parameters.
