  Isolated InAs/InP self-assembled quantum wires have been grown using in situ
accumulated stress measurements to adjust the optimal InAs thickness. Atomic
force microscopy imaging shows highly asymmetric nanostructures with average
length exceeding more than ten times their width. High resolution optical
investigation of as-grown samples reveals strong photoluminescence from
individual quantum wires at 1.5 microns. Additional sharp features are related
to monolayer fluctuations of the two dimensional InAs layer present during the
early stages of the quantum wire self-assembling process.
