  We demonstrate that the current flow in graphene can be guided on atomically
thin current pathways by means of the engineering of Kekul\'e-O distortions. A
grain boundary in these distortions separates the system into topological
distinct regions and induces a ballistic domain-wall state. The state does not
depend on the precise orientation of the grain boundary with respect to the
graphene sublattice and therefore, permits to guide the current on arbitrary
paths through the system. As the state is gapped, the current flow can be
switched by electrostatic gates. Our findings can be explained by a
generalization of the Jackiw-Rebbi model, where the electrons behave in one
region of the system as fermions with an effective complex mass, making the
device not only promising for technological applications but also a test-ground
for concepts from high-energy physics. An atomic model supported by DFT
calculations demonstrates that the proposed system can be realized by
decorating graphene with Ti atoms.
