  Capacitance-voltage (CV) measurements are a widely used technique in silicon
detector physics. It gives direct information about the full depletion voltage
and the effective doping concentration. However, for highly irradiated sensors,
the measured data differs significantly from the usual shape which makes the
extraction of the afore mentioned parameters less precise to not possible. We
present an explanation for the obseved frequency dependence and based on that,
a method to extract the desired sensor parameters.
