  Hole spins in semiconductor quantum dots represent a viable route for the
implementation of electrically controlled qubits. In particular, the qubit
implementation based on Si pMOSFETs offers great potentialities in terms of
integration with the control electronics and long-term scalability. Moreover,
the future down scaling of these devices will possibly improve the performance
of both the classical (control) and quantum components of such monolithically
integrated circuits. Here we use a multi-scale approach to simulate a hole-spin
qubit in a down scaled Si-channel pMOSFET, whose structure is based on a
commercial 22nm fully-depleted silicon-on-insulator device. Our calculations
show the formation of well defined hole quantum dots within the Si channel, and
the possibility of a general electrical control, with Rabi frequencies of the
order of 100 MHz for realistic field values. Our calculations demonstrate the
crucial role of the channel aspect ratio, and the presence of a favorable
parameter range for the qubit manipulation.
