  Artificial intelligence is widely used in everyday life. However, an
insufficient computing efficiency due to the so-called von Neumann bottleneck
cannot satisfy the demand for real-time processing of rapidly growing data.
Memristive in-memory computing is a promising candidate for highly efficient
data processing. However, performance of memristors varies significantly
because of microstructure change induced by electric-driven matter migration.
Here, we propose an all-optically controlled (AOC) memristor with a simple
Au/ZnO/Pt sandwich structure based on a purely electronic tuning mechanism of
memconductance. The memconductance can be reversibly tuned only by light
irradiation with different wavelengths. The device can be used to perform
in-memory computation such as nonvolatile neuromorphic computing and Boolean
logic functions. Moreover, no microstructure change is involved during the
operation of our AOC memristor which demonstrates superior operation stability.
Based on this and its structural simplicity, the device has attractive
application prospects for the next generation of computing systems.
