  We report the growth of the intrinsic magnetic topological system
MnTe(Bi2Te3)n by molecular beam epitaxy. By mapping the temperature and the
Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1
phase MnBi2Te4 with 2.0<Bi:Mn<2.6 at 225 {\deg}C. Here the films are
stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios
(Bi:Mn>4.5) it is found that the n = 2 MnBi4Te7 phase is stabilized. Transport
measurements indicate that the MnBi2Te4 and MnBi4Te7 undergo magnetic
transitions around 25 K, and 10 K, respectively, consistent with
antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions
(Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the
Hall effect, which likely indicates Mn-doped MnBi2Te4. Understanding how to
grow ternary chalcogenide phases is the key to synthesizing new materials and
to interface magnetism and topology, which together are routes to realize and
control exotic quantum phenomena.
