  Tellurium (Te) has attracted great research interest due to its unique
crystal structure since 1970s. However, the conduction band of Te is rarely
studied experimentally because of the intrinsic p-type nature of Te crystal. By
atomic layer deposited dielectric doping technique, we are able to access the
conduction band transport properties of Te in a controlled fashion. In this
paper, we report on a systematic study of weak-antilocalization (WAL) effect in
n-type two-dimensional (2D) Te films. We find that the WAL agrees well with
Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature
dependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spin
relaxation and phase relaxation is governed by electron-electron (e-e)
interaction. Large phase coherence length near 600nm at T=1K is obtained,
together with gate tunable spin-orbit interaction (SOI). Transition from
weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is
also observed. These results demonstrate that newly developed solution-based
synthesized Te films provide a new controllable strong SOI 2D semiconductor
with high potential for spintronic applications.
