  Composite oxides have been indeed proved to be valuable materials in
optoelectronic applications. The combination of indium oxide and gallium oxide
and other materials can lead to enhanced optical and electronic properties,
making them suitable for a variety of optoelectronic devices. Meticulous
analysis of the various optical properties helped to draw conclusions about the
heterostructure of Indium and Gallium oxide and its use as a suitable
semiconducting material in the medium bandgap range. The density of states and
the band structure have been obtained from the density functional theory
calculations. Real frequency phonon density of states supports dynamical
stability of the crystal structure. A favorable energy band gap is achieved in
the visible region of the spectrum, indicating that this mixed oxide is well
suited for optoelectronic devices such as LEDs and solar cells.
