  Reversible straintronic switching of a nanomagnet's magnetization between two
stable or metastable states promises ultra-energy-efficient non-volatile
memory. Here, we report strain-induced magnetization switching in ~300 nm sized
FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one
polarity applied across the substrate generates compressive strain in a
nanomagnet and switches its magnetization to one state, while voltage of the
opposite polarity generates tensile strain and switches the magnetization back
to the original state, resulting in "non-toggle" switching. The two states can
encode the two binary bits, and, using the right voltage polarity, one can
write either bit deterministically.
