  The pivotal storage density win achieved by solid-state devices over magnetic
devices recently is a result of multiple innovations in physics, architecture,
and signal processing. Constrained coding is used in Flash devices to increase
reliability via mitigating inter-cell interference. Recently,
capacity-achieving constrained codes were introduced to serve that purpose.
While these codes result in minimal redundancy, they result in non-negligible
complexity increase and access speed limitation since pages cannot be read
separately. In this paper, we suggest new constrained coding schemes that have
low-complexity and preserve the desirable high access speed in modern Flash
devices. The idea is to eliminate error-prone patterns by coding data either
only on the left-most page (binary coding) or only on the two left-most pages
($4$-ary coding) while leaving data on all the remaining pages uncoded. Our
coding schemes are systematic and capacity-approaching. We refer to the
proposed schemes as read-and-run (RR) constrained coding schemes. The $4$-ary
RR coding scheme is introduced to limit the rate loss. We analyze the new RR
coding schemes and discuss their impact on the probability of occurrence of
different charge levels. We also demonstrate the performance improvement
achieved via RR coding on a practical triple-level cell Flash device.
