  Quantum information processing with photons in small-footprint and highly
integrated silicon-based photonic chips requires incorporating non-classical
light sources. In this respect, self-assembled III-V semiconductor quantum dots
(QDs) are an attractive solution, however, they must be combined with the
silicon platform. Here, by utilizing the large-area direct bonding technique,
we demonstrate the hybridization of InP and SOI chips, which allows for
coupling single photons to the SOI chip interior, offering cost-effective
scalability in setting up a multi-source environment for quantum photonic
chips. We fabricate devices consisting of self-assembled InAs QDs embedded in
the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing
on devices generating light in the telecom C-band compatible with the low-loss
optical fiber networks, we demonstrate the light coupling between InP and SOI
platforms by observing photons outcoupled at the InP-made circular Bragg
grating outcoupler fabricated at the end of an 80 $\mu$m-long Si WG, and at the
cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon
generation events exhibiting 80% single photon generation purity, we measure
the photon number outcoupled at the cleaved facet of the Si WG. We estimate the
directional on-chip photon coupling between the source and the Si WG to 5.1%.
