  X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated.
After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20%
drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub,
the major cause of n-MOSFET drain current change is the generated positive
charge in BOX. On the other hand, the major cause of p-MOSFET drain current
change is the radiation induced gate channel modulation by the generated
positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain
current change is improved by higher PLDD dose. Thinner BOX is also proposed
for further radiation hardness improvement.
