  The electrical transport properties of amorphous Bi films prepared by
sequential quench deposition have been studied in situ. A
superconductor-insulator (S-I) transition was observed as the film was made
increasingly thicker, consistent with previous studies. Unexpected behavior was
found at the initial stage of film growth, a regime not explored in detail
prior to the present work. As the temperature was lowered, a positive
temperature coefficient of resistance (dR/dT > 0) emerged, with the resistance
reaching a minimum before the dR/dT became negative again. This behavior was
accompanied by a non-linear and asymmetric I-V characteristic. As the film
became thicker, conventional variable-range hopping (VRH) was recovered. We
attribute the observed crossover in the electrical transport properties to an
amorphous to granular structural transition. The positive dR/dT found in the
amorphous phase of Bi formed at the initial stage of film growth was
qualitatively explained by the formation of metallic droplets within the
electron glass.
