  We address the problem of quantum transport in a nanometre sized two-terminal
ZnO device subject to an external strain. The two junctions formed between the
electrodes and the ZnO are generally taken as Ohmic and Schottky type,
respectively. Unlike the conventional treatment to the piezopotential, we treat
it as a potential barrier which is only induced at the interfaces. By
calculating the transmission coefficient of a Fermi-energized electron that
flows from one end to the other, it is found that the piezopotential has the
effect of modulating the voltage threshold of the current flowing. The
calculations are based on the quantum scattering theory. The work is believed
to pave the way for investigating the quantum piezotronics.
