  We demonstrate that low concentrations of a secondary magnetic phase in
(Ga,Mn)As thin films can enhance the coercivity by factors up to ~100 without
significantly degrading the Curie temperature or saturation magnetisation.
Magnetic measurements indicate that the secondary phase consists of MnAs
nanoclusters, of average size ~7nm. This approach to controlling the coercivity
while maintaining high Curie temperature, may be important for realizing
ferromagnetic semiconductor based devices.
