  We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane
6H-SiC faces where material characterization is compared with that known for EG
grown on polar faces. Atomic force microscopy (AFM) surface morphology exhibits
nanocrystalline graphite like features for non-polar faces, while the polar
silicon face shows step like features. This differing behavior is attributed to
the lack of a hexagonal template on the non-polar faces. Non-polar faces also
exhibit greater disorder and red shift of all Raman peaks (D, G and 2D) with
increasing temperature. This is attributed to decreasing stress with increasing
temperature. These variations provide evidence of different EG growth
mechanisms on non-polar and polar faces, likely due to differences in surface
free energy. We also present differences between a-plane EG and m-plane EG in
terms of morphology, thickness and Raman characteristics
