  We carry out an analytical theory of generation-recombination noise for a two
level resistor model which goes beyond those presently available by including
the effects of both space charge fluctuations and diffusion current. Finite
size effects are found responsible for the saturation of the low frequency
current spectral density at high enough applied voltages. The saturation
behaviour is controlled essentially by the correlations coming from the long
range Coulomb interaction. It is suggested that the saturation of the current
fluctuations for high voltage bias constitutes a general feature of
generation-recombination noise.
