  We report a reinvestigation of superconducting Sn$_{1-x}$In$_{x}$Te at both
low and high In doping levels. Analysis of the superconductivity reveals a
fundamental change as a function of \textit{x}: the system evolves from a
weakly coupled to a strongly coupled superconductor with increasing indium
content. Hall Effect measurements further show that the carrier density does
not vary linearly with Indium content; indeed at high Indium content, the
samples are overall \textit{n}-type, which is contrary to expectations of the
standard picture of In$^{1+}$ replacing Sn$^{2+}$ in this material. Density
functional theory calculations probing the electronic state of In in SnTe show
that it does not act as a trivial hole dopant, but instead forms a distinct,
partly filled In 5\textit{s} - Te 5\textit{p} hybridized state centered around
E$_F$, very different from what is seen for other nominal hole dopants such as
Na, Ag, and vacant Sn sites. We conclude that superconducting In-doped SnTe
therefore cannot be considered as a simple hole doped semiconductor.
