  Graphene has attracted enormous interests due to its unique physical,
mechanical, and electrical properties. Specially, graphene-based field-effect
transistors (FETs) have evolved rapidly and are now considered as an option for
conventional silicon devices. As a critical step in the design cycle of modern
IC products, compact model refers to the development of models for integrated
semiconductor devices for use in circuit simulations. The purpose of this
review is to provide a theoretical description of current compact model of
graphene field-effect transistors. Special attention is devoted to the charge
sheet model, drift-diffusion model, Boltzmann equation, density of states
(DOS), and surface-potential-based compact model. Finally, an outlook of this
field is briefly discussed.
