  We develop a Monte Carlo model to study injection of spin-polarized electrons
through a Schottky barrier from a ferromagnetic metal contact into a
non-magnetic low-dimensional semiconductor structure. Both mechanisms of
thermionic emission and tunneling injection are included in the model. Due to
the barrier shape, the injected electrons are non-thermalized. Spin dynamics in
the semiconductor heterostructure is controlled by the Rashba and Dresselhaus
spin-orbit interactions and described by a single electron spin density matrix
formalism. In addition to the linear term, the third order term in momentum for
the Dresselhaus interaction is included. Effect of the Schottky potential on
the spin dynamics in a 2 dimensional semiconductor device channel is studied.
It is found that the injected current can maintain substantial spin
polarization to a length scale in the order of 1 micrometer at room temperature
without external magnetic fields.
