  Growth of high-quality single-crystalline InSb layers remains challenging in
material science. Such layered InSb materials are highly desired for searching
for and manipulation of Majorana fermions in solid state, a fundamental
research task in physics today, and for development of novel high-speed
nanoelectronic and infrared optoelectronic devices. Here we report on a new
route towards growth of single-crystalline, layered InSb materials. We
demonstrate the successful growth of free-standing, two-dimensional InSb
nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The
grown InSb nanosheets are pure zinc-blende single crystals. The length and
width of the InSb nanosheets are up to several micrometers and the thickness is
down to ~10 nm. The InSb nanosheets show a clear ambipolar behavior and a high
electron mobility. Our work will open up new technology routes towards the
development of InSb-based devices for applications in nanoelectronics,
optoelectronics and quantum electronics, and for study of fundamental physical
phenomena.
