  We study the effects of spin accumulation (inside reservoirs) on electronic
transport with tunneling and reflections at the gates of a quantum dot. Within
the stub model, the calculation focus on the current-current correlation
function for the flux of electrons injected into the quantum dot. The linear
response theory used allows to obtain the noise power in the regime of thermal
crossover as a function of parameters that reveal the spin polarization at the
reservoirs. The calculation is performed employing diagrammatic integration
within the universal groups (ensembles of Dyson) for a non-ideal,
non-equilibrium chaotic quantum dot. We show that changes in the spin
distribution determines significant alteration in noise behavior at values of
the tunneling rates close to zero, in the regime of strong reflection at the
gates.
