  In this work, a novel one-dimensional geometry for metal-insulator-graphene
(1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG
diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that
acts as barrier material. The diodes demonstrate ultra-high current density
since the transport in the graphene and through the barrier is in plane. The
geometry delivers very low capacitive coupling between the cathode and anode of
the diode, which shows frequency response up to 100 GHz and ensures potential
high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to
function uniformly and stable under bending conditions down to 6.4 mm bending
radius on flexible substrate.
