  Contact Resistance (RC) is a major limiting factor in the performance of
graphene devices. RC is sensitive to the quality of the interface and the
composition of the contact, which are affected by the graphene transfer process
and contact deposition conditions. In this work, a linear correlation is
observed between the composition of Ti contacts, characterized by X-ray
photoelectron spectroscopy, and the Ti/graphene (Gr) contact resistance
measured by the transfer length method. We find that contact composition is
tunable via deposition rate and base pressure. Reactor base pressure is found
to effect the resultant contact resistance. The effect of contact deposition
conditions on thermal transport measured by time-domain thermoreflectance is
also reported and interfaces with higher oxide composition appear to result in
a lower thermal boundary conductance. Possible origins of this thermal boundary
conductance change with oxide composition are discussed.
