  The recent advancement in two-dimensional (2D) materials-based quantum
confinement has provided an opportunity to investigate and manipulate electron
transport for quantum applications. However, the issues of metal/semiconductor
interface effects create a hurdle to realize the artificial fabrication of the
quantum dot and study the quantum transport. Here, we utilize the strategy of
employing the semimetal for Ohmic contacts with transition metal
dichalcogenides especially, multilayer MoS2 and successfully fabricate the
MoS2-Bi based FET devices. We observe the Ohmic behavior in the MoS2-Bi devices
at cryogenic temperatures 4.2, 2.3 and 0.4 K. We also utilize intrinsic
Schottky barriers formed at the interface between MoS2 and Au for the gate
electrodes to form and control quantum dots. We observed Coulomb diamonds in
MoS2 devices at cryogenic temperature. Our results of quantum transport in MoS2
could serve as a stepping stone for investigating novel quantum effects such as
spin-valley coupling and the manipulation of qubit systems.
