  In this work, the results of fabricating ultra thin VO$_2$ films on the
technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron
sputtering are presented. Results indicate that a post deposition anneal in low
partial pressures of oxygen is an effective way at stabilizing the
VO$_2$(M$_{1}$) phase on the SiO$_2$ surface. VO$_2$ films with a thickness of
42nm show a continuous microstructure, and undergo a resistivity change of more
than a factor of 200 as the temperature of the film increases above 72$^{o}C$.
The film shows hysteresis in the metal-insulator transition temperature upon
heating and cooling with a width of approximately 8$^o$C. The resistivity of
the low temperature semiconducting phase is found to be thermally activated
with an activation energy 0.16$\pm$0.03 $ev$. Stress measurements using X-ray
diffraction indicate that the ultra thin VO$_2$ film has a large tensile stress
of 2.0$\pm$0.2 $GPa$. This value agrees well with the calculated thermal stress
due to differential thermal expansion between the VO$_2$ thin film and silicon
substrate. The stress leads to a shift of the metal-insulator transition
temperature by approximately 4$^{o}C$.
