  Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs)
are an exciting platform for new excitonic physics and next-generation
electronics, creating a strong demand to understand their growth, doping, and
heterostructures. Despite significant progress in solid-source (SS-) and
metal-organic chemical vapor deposition (MOCVD), further optimization is
necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we
report a hybrid MOCVD growth method that combines liquid-phase metal precursor
deposition and vapor-phase organo-chalcogen delivery to leverage the advantages
of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$
growth with tunable morphologies - from separated single-crystal domains to
continuous monolayer films - on a variety of substrates, including sapphire,
SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton
photoluminescence linewidths down to 33 meV and room-temperature mobility up to
34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid
precursor composition, we demonstrate the growth of V-doped WS$_2$,
MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures.
This work presents an efficient approach for addressing a variety of TMDC
synthesis needs on a laboratory scale.
