  To date, no electro-optic platform enables devices with high bandwidth, small
footprint, and low power consumption, while also enabling mass production. Here
we demonstrate high-yield fabrication of high-speed graphene electro-absorption
modulators using CVD-grown graphene. We minimize variation in device
performance from graphene inhomogeneity over large area by engineering
graphene-mode overlap and device capacitance to ensure high extinction ratio.
We fabricate an 8 mm x 1 mm chip with 32 graphene electro-absorption modulators
and measure 94% yield with bit error rate below the hard-decision forward error
correction limit at 7 Gbits/s, amounting to a total aggregated data rate of 210
Gbits/s. Monte Carlo simulations show that data rates > 0.6 Tbits/s are within
reach by further optimizing device cross-section, paving the way for
graphene-based ultra-high data rate applications.
