  We demonstrate fabrication of atomically sharp interfaces between nitride
antiperovskite Mn$_{3}$GaN and oxide perovskites
(La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as
paradigms of nitride-antiperovskite/oxide-perovskite heterostructures. Using a
combination of scanning transmission electron microscopy (STEM),
atomic-resolution spectroscopic techniques, and first-principle calculations,
we investigated the atomic-scale structure, composition, and boding at the
interface. We show that the epitaxial growth between the antiperovskite and
perovskite compounds is mediated by a coherent interfacial monolayer that
connects the two anti-structures. We anticipate our results to be a major step
for the development of functional antiperovskite/perovskite heterostructures
opening to harness a combination of their functional properties including
topological properties for ultra low power applications.
