  The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on
hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition.
Valence band structures of Bi2Se3/H:Si heterojunction were investigated by
X-ray Photoemission Spectroscopy and Ultraviolet Photoemission Spectroscopy.
The measured Schottky barrier height at the Bi2Se3-H:Si interface was 0.31 eV.
The findings pave the way for economically preparing heterojunctions and
multilayers of layered compound families of topological insulators.
