  The performance of novel n-in-p planar pixel detectors, designed for future
upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors
technology is a promising candidate for the pixel upgrade thanks to its
radiation hardness and cost effectiveness, that allow for enlarging the area
instrumented with pixel detectors. The n-in-p modules presented here are
composed of pixel sensors produced by CiS connected by bump-bonding to the
ATLAS readout chip FE-I3. The characterization of these devices has been
performed before and after irradiation up to a fluence of 5 x 10**15 1 MeV neq
cm-2 . Charge collection measurements carried out with radioactive sources have
proven the functioning of this technology up to these particle fluences. First
results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also
discussed, demonstrating a high tracking efficiency of (98.6 \pm 0.3)% and a
high collected charge of about 10 ke for a device irradiated at the maximum
fluence and biased at 1 kV.
