  To study epitaxial thin-film growth, a new model is introduced and extensive
kinetic Monte Carlo simulations performed for a wide range of fluxes and
temperatures. Varying the deposition conditions, a rich growth diagram is
found. The model also reproduces several known regimes and in the limit of low
particle mobility a new regime is defined. Finally, a relation is postulated
between the temperatures of the kinetic and thermal roughening transitions.
