  Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry.
The electric field due to the gate produces a large ambipolar decrease in
resistance at low temperatures. This is attributed to the development of a
pseudogap in the density of states and the couple of localized charge to
strain. The gate effect and mangetoresistance are interpreted in a consistent
framework. The implications for the low temperature behavior of a manganite
film in the two dimensional limit are discussed.
