  An insulator-to-metal transition is observed in trilayer graphene based on
the temperature dependence of the resistance under different applied gate
voltages. At small gate voltages the resistance decreases with increasing
temperature due to the increase in carrier concentration resulting from thermal
excitation of electron-hole pairs. At large gate voltages excitation of
electron-hole pairs is suppressed, and the resistance increases with increasing
temperature because of the enhanced electron-phonon scattering. We find that
the simple model with overlapping conduction and valence bands, each with
quadratic dispersion relations, is unsatisfactory. Instead, we conclude that
impurities in the substrate that create local puddles of higher electron or
hole densities are responsible for the residual conductivity at low
temperatures. The best fit is obtained using a continuous distribution of
puddles. From the fit the average of the electron and hole effective masses can
be determined.
