  We propose a scheme where transport measurements of charge current and its
noise can be used to determine the spin Hall conductance in a four-terminal
setup. Starting from the scattering formalism we express the spin current and
spin Hall conductance in terms of spin-dependent transmission coefficients.
These coefficients are then expressed in terms of charge current and noise. We
use the scheme to characterize the spin injection efficiency of a
ferromagnetic/semiconductor interface.
