  We demonstrate microwave manipulation of the spin states of electrically
injected spin-polarized electrons in silicon. Although the silicon channel is
bounded by ferromagnetic metal films, we show that moderate microwave power can
be applied to the devices without altering the device operation significantly.
Resonant microwave irradiation is used to induce spin rotation of
spin-polarized electrons as they travel across a silicon channel, and the
resultant spin polarization is subsequently detected by a ferromagnetic
Schottky barrier spin detector. These results demonstrate the potential for
combining advanced electron spin resonance techniques to complement the study
of semiconductor spintronic devices beyond standard magnetotransport
measurements.
