  Aluminum nitride is a technologically important wide bandgap semiconductor
which has been shown to host bright quantum emitters. In this paper, we probe
the photodynamics of quantum emitters in aluminum nitride using photon emission
correlations and time-resolved spectroscopy. We identify that each emitter
contains as many as 6 internal energy levels with distinct laser
power-dependent behaviors. Power-dependent shelving and de-shelving processes,
such as optically induced ionization and recombination are considered,
indicating complex optical dynamics associated with the spontaneous and
optically pumped transitions. State population dynamics simulations
qualitatively explain the temporal behaviours of the quantum emitters,
revealing that those with pump-dependent de-shelving processes can saturate at
significantly higher intensities, resulting in bright room-temperature quantum
light emission.
