  As transistor features shrink beyond the 2 nm node, studying and designing
for atomic scale effects become essential. Being able to combine conventional
CMOS with new atomic scale fabrication routes capable of creating 2D patterns
of highly doped phosphorus layers with atomic precision has implications for
the future of digital electronics. This work establishes the accelerated
lifetime tests of such doped layers, showing that these materials survive high
current (>3.0 MA/cm2) and 300$^{\circ}$C for greater than 70 days and are still
electrically conductive. The doped layers compare well to failures in
traditional metal layers like aluminum and copper where mean time to failure at
these temperatures and current densities would occur within hours. It also
establishes that these materials are more stable than metal features, paving
the way toward their integration with operational CMOS.
