  The Two Photon Absorption - Transient Current Technique (TPA-TCT) was used to
investigate a silicon strip detector with illumination from the top.
Measurement and analysis techniques for the TPA-TCT of segmented devices are
presented and discussed using a passive strip CMOS detector as an example. The
influence of laser beam clipping and reflection is shown and a method that
allows to compensate these intensity related effects for the investigation of
the electric field is introduced and successfully employed. Besides, the mirror
technique is introduced, which exploits reflection at a metallised back side to
enable the measurement directly below a top metallisation, while illuminating
from the top.
