  We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO
films grown at low temperature by the Atomic layer Deposition (ALD) method is
due to Co metal accumulations at the ZnCoO/substrate interface region. The
accumulated experimental evi evidences allow us to reject several other
explanations of this effect in our samples, despite the fact that some of them
are likely to be responsible for the low temperature FM in this class of the
material.
