  We present data on the electrical transport properties of highly-doped
silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up
to 48 T. At low field intensities, B<7 T, we observe a strong modification of
the conductance due to the destruction of weak localization whereas at higher
fields, where the magnetic field length becomes comparable to the effective
Bohr radius of phosphorous in silicon, a strong decrease in conductance is
demonstrated. Data in the high and low electric field bias regimes are then
compared to show that close to the Coulomb blockade edge magnetically-induced
quenching to single donors in the quantum dot is achieved at about 40 T.
