  Significant scientific and technological progress in the field of spintronics
is based on trilayer magnetic tunnel junction devices which principally rely on
the physics of single barrier tunneling. While technologically relevant devices
have been prototyped, the physics of single barrier tunneling poses ultimate
limitations on the performance of magnetic tunnel junction devices. Here, we
propose a fresh route toward high performance magnetic tunnel junctions by
making electronic analogs of optical phenomena such as anti-reflections and
Fabry-P\`erot resonances. The devices we propose feature anti-reflection
enabled superlattice heterostructures sandwiched between the fixed and the free
ferromagnets of the magnetic tunnel junction structure. Our predictions are
based on the non-equilibrium Green's function spin transport formalism coupled
self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing
to the physics of bandpass spin filtering in the bandpass superlattice magnetic
tunnel junction device, we demonstrate an ultra-high boost in the tunnel
magneto-resistance (TMR$\approx5\times10^4\%$) and nearly 92% suppression of
spin transfer torque switching bias in comparison to a traditional trilayer
magnetic tunnel junction device. We rationalize improvised spin transfer torque
switching via analysis of the Slonczewski spin current transmission spectra.
The proof of concepts presented here can lead to next-generation spintronics
device design harvesting the rich physics of superlattice heterostructures and
exploiting spintronic analogs of optical phenomena.
