  Novel ohmic contacts to n-ZnSe are demonstrated using single crystal Al films
deposited on epitaxially grown ZnSe (100) by molecular beam epitaxy (MBE).
Electron Backscatter Diffraction (EBSD) confirmed the single crystalline
structure of the Al films. The (110)-oriented Al layer was rotated rotated
45$^\circ$ relative to substrate to match the ZnSe (100) lattice constant. The
as-grown Al-ZnSe contact exhibited nearly ideal ohmic characteristics over a
large doping range of n-ZnSe without any additional treatment. The contact
resistances are in a range of 10$^{-3}$ $\Omega$-cm$^{2}$ for even lightly
doped ZnSe ($\sim$10$^{17}$ cm$^{-3}$). Leaky Schottky behavior in lightly
doped ZnSe samples suggested Al-ZnSe formed a low barrier height, Schottky
limit contact. In-situ grown Al could act as a simple metal contact to n-ZnSe
regardless of carrier concentration with lower resistance compared to other
reported contacts in literatures. The reported novel metallization method could
greatly simplify the ZnSe-based device fabrication complexity as well as lower
the cost
