  Thermal annealing plays a crucial role for healing the defectiveness in the
ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this
work, we have studied the effect of a double step annealing on the body (Al
implanted) and the source (P implanted) regions of such devices. We found that
a high temperature annealing (1750{\deg}C, 1h) followed by a lower temperature
one (1500{\deg}C, 4h) is mandatory to achieve low defects concentration and
good crystal quality in both the n- and p- type zones of the device.
