  Using the tight-binding model, we investigate the influence of vacancy
disorder on electrical transport in graphene Hall bars in the presence of
quantizing magnetic fields. Disorder, induced by a random distribution of
monovacancies, breaks the graphene sublattice symmetry and creates states
localized on the vacancies. These states are observable in the bend resistance,
as well as in the total DOS. Their energy is proportional to the square root of
the magnetic field, while their localization length is proportional to the
cyclotron radius. At the energies of these localized states, the electron
current flows around the monovacancies and, as we show, it can follow
unexpected paths depending on the particular arrangement of vacancies. We study
how these localized states change with the vacancy concentration, and what are
the effects of including the next nearest neighbor hopping term. Our results
are also compared with the situation when double vacancies are present in the
system. Double vacancies also induce localized states, but their energy and
magnetic field dependences are different. Their localization energy scales
linearly with the magnetic field, and their localization length appears not to
depend on the field strength.
