  By generalizing the classical linear response theory of stick percolation to
nonlinear regime, we find that the drain current of a Nanobundle Thin Film
Transistor (NB-TFT) is described under a rather general set of conditions by a
universal scaling formula ID = A/LS g(LS/LC, rho_S * LS * LS) f(VG, VD), where
A is a technology-specific constant, g is function of geometrical factors like
stick length (LS), channel length (LC), and stick density (rho_S) and f is a
function of drain (VD) and gate (VG) biasing conditions. This scaling formula
implies that the measurement of full I-V characteristics of a single NB-TFT is
sufficient to predict the performance characteristics of any other transistor
with arbitrary geometrical parameters and biasing conditions.
