  We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3
single-crystal substrates by pulsed laser deposition using four different
wavelengths and investigated how the excitation wavelength and pulse energy
affected growth. Using the tilting and twisting angles of X-ray diffraction
rocking curves, we quantitatively analyzed the crystallinity of each film. We
found that the optimal deposition rate, which could be tuned by pulse energy,
was independent of laser wavelength. The high-quality film grown at the optimal
pulse energy (i.e., the optimum deposition rate) exhibited high critical
current density over 1 MA/cm2 irrespective of the laser wavelength.
