  A theory for longitudinal (T1) and transverse (T2) electron spin coherence
times in zincblende semiconductor quantum wells is developed based on a
non-perturbative nanostructure model solved in a fourteen-band restricted basis
set. Distinctly different dependences of coherence times on mobility,
quantization energy, and temperature are found from previous calculations.
Quantitative agreement between our calculations and measurements is found for
GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.
