  We present a magneto-Raman study on high-quality single-layer graphene grown
by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal
boron nitride by a dry transfer technique. By analyzing the Raman D, G, and 2D
peaks, we find that the structural quality of the samples is comparable to
state-of-the-art exfoliated graphene flakes. From B field dependent Raman
measurements, we extract the broadening and associated lifetime of the G peak
due to anharmonic effects. Furthermore, we determine the decay width and
lifetime of Landau level (LL) transitions from magneto-phonon resonances as a
function of laser power. At low laser power, we find a minimal decay width of
140 1/cm highlighting the high electronic quality of the CVD-grown graphene. At
higher laser power, we observe an increase of the LL decay width leading to a
saturation with the corresponding lifetime saturating at a minimal value of 18
fs.
