  Spin chirality in metallic materials with non-coplanar magnetic order can
give rise to a Berry phase induced topological Hall effect. Here, we report the
observation of a large topological Hall effect in high-quality films of
Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001).
The topological Hall resistivity is present up to $\mu_{0}H \approx 4~$T below
the spin reorientation transition temperature, $T_{s}=185$~K. We find, that the
maximum topological Hall resistivity is of comparable magnitude as the
anomalous Hall resistivity. Owing to the size, the topological Hall effect is
directly evident prior to the customarily performed subtraction of magnetometry
data. Further, we underline the robustness of the topological Hall effect in
Mn\textsubscript{2-x}PtSn by extracting the effect for multiple stoichiometries
(x~=~0.5, 0.25, 0.1) and film thicknesses (t = 104, 52, 35~nm) with maximum
topological Hall resistivities between $0.76~\mu\Omega$cm and
$1.55~\mu\Omega$cm at 150~K.
