  A comparative analysis of two Raman line-shape functions has been carried out
to validate the true representation of experimentally observed Raman scattering
data for semiconducting nanomaterials. A modified form of already existing
phonon confinement model incorporates two basic considerations, phonon momentum
conservation and shift in zone centre phonon frequency. After incorporation of
the above mentioned two factors, a rather symmetric Raman line-shape is
generated which is in contrary to the usual asymmetric Raman line-shapes
obtained from nanostructured semiconductor. By fitting an experimentally
observed Raman scattering data from silicon nanostructures, prepared by metal
induced etching, it can be established that the Raman line-shape obtained
within the framework of phonon confinement model is a true representative Raman
line-shape of sufficiently low dimensions semiconductors.
