  Describing the doped Fullerenes using a generalized Hubbard model, we study
the Mott transition for different integer fillings of the t_1u band. We use the
opening of the energy-gap E_g as a criterion for the transition. E_g is
calculated as a function of the on-site Coulomb interaction U using fixed-node
diffusion Monte Carlo. We find that for systems with doping away from
half-filling the Mott transitions occurs at smaller U than for the half-filled
system. We give a simple model for the doping dependence of the Mott
transition.
