  Gapped metals, a recently discovered new class of materials, possess a band
gap slightly above or below the Fermi level. These materials are intrinsic p-
or n-type semiconductors eliminating the need for extrinsic doping. Inspired by
this concept, we propose the so-called "spin-gapped metals" exhibiting
intrinsic p- or n-type behavior for each spin channel independently. Their
properties would be similar to the dilute magnetic semiconductors eliminating
the requirement for transition metal doping. Here, we demonstrate this novel
concept in semi-Heusler compounds using first principles electronic band
structure calculations. We comprehensively analyze their electronic and
magnetic properties, paving the way for novel technological applications of
Heusler compounds.
