  Two-dimensional arsenic allotropes have been grown on metallic surfaces,
while topological properties have been theoretically described on strained
structures. Here we experimentally grow arsenene by molecular beam epitaxy over
the insulating SiC substrate. The arsenene presents a flat structure with a
strain field that follows the SiC surface periodicity. Our ab initio
simulations, based on the density functional theory, corroborate the
experimental observation. The strained structure presents a new arsenene
allotrope with a triangular structure, rather than the honeycomb previously
predicted for other pnictogens. This strained structure presents a Peierls-like
transition leading to an indirect gap semiconducting behavior.
