  We report the realization of a completely controllable high-speed
nanomechanical memory element fabricated from single-crystal silicon wafers.
This element consists of a doubly-clamped suspended nanomechanical beam
structure, which can be made to switch controllably between two stable and
distinct states at a single frequency in the megahertz range. Because of their
sub-micron size and high normal-mode frequencies, these nanomechanical memory
elements offer the potential to rival the current state-of-the-art electronic
data storage and processing.
