  We developed the focused ion beam (FIB) and ion milling techniques for a
fabrication of the Bi_2Sr_2CaCu_2O_{8+\delta} (Bi-2212) stacked junctions with
in-plane size L_{ab} from several microns down to the submicron scale without
degradation of T_c. We found that behaviour of submicron junctions (L_{ab} < 1
{\mu}m) is quite different from the bigger ones. The critical current density
is considerably suppressed, the hysteresis and multibranched structure of the
IV characteristics are eliminated, the periodic structure of current peaks
reproducibly appears on the IV curves at low temperatures. A period of the
structure, {\Delta}V, is consistent with the Coulomb charging energy of a
single pair, {\Delta}V = e/C with C the effective capacitance of the stack. We
consider this behaviour to originate from the Coulomb blockade of the intrinsic
Josephson tunneling in submicron Bi-2212 stacks.
