  The performance of nanoscale electronic devices based on a two-three
dimensional (2D-3D) interface is significantly affected by the electrical
contacts that interconnect these materials with external circuitry. This work
investigates charge transport effects at the 2D-3D ohmic contact coupled with
the thermionic injection model for graphene/Si Schottky junction. Here, w e
focus on the intrinsic properties of graphene-metal contacts, paying particular
attention to the nature of the contact failure mechanism under high electrical
stress. According to our findings, severe current crowding (CC) effects in
highly conductive electrical contact significantly affect device failure that
can be reduced by spatially varying the contact properties and geometry. The
impact of electrical breakdown on material degradation is systematically
analyzed by atomic force, Raman, scanning electron, and energy dispersive X-ray
spectroscopies. Our devices withstand high electrostatic discharge spikes over
a longer period, manifesting high robustness and operational stability. This
research paves the way towards a highly robust and reliable graphene/Si
heterostructure in futuristic on-chip integration in dynamic switching. The
methods we employed here can be extended for other nanoscale electronic devices
based on 2D-3D interfaces
