  We suggest a new type of magnetic random access memory (MRAM) that is based
on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we
demonstrate this idea with manganite films. The PHE-MRAM is structurally
simpler than currently developed MRAM that is based on magnetoresistance tunnel
junctions (MTJ), with the tunnel junction structure being replaced by a single
layer film.
