  We perform a comparative study of light storage in antirelaxation-coated and
buffer-gas-filled alkali-vapor cells using electromagnetically induced
transparency (EIT) in warm rubidium vapor. The use of a buffer-gas-filled cell
resulted in $\approx$10-fold improvement in storage time and efficiency
compared to antirelaxation coated cells. Our findings contribute to the
development of future field-deployable high-performance quantum memories.
