  Graphene is ideally suited for optoelectronic applications. It offers
absorption at telecom wavelengths, high-frequency operation and
CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a
back-gated graphene field effect transistor (GFET). We also present a model to
describe the resulting mixed current. These results pave the way for GETs
optoelectronic mixers for mm-wave applications, such as telecommunications and
RADAR/LIDAR systems.
