  Ballistic transport was studied in a multiple-band system consisting of an
antidot lattice of AB-stacked trilayer graphene. The low temperature
magnetoresistance showed commensurability peaks arising from matching of the
antidot lattice period and radius of cyclotron orbits for each mono- and
bilayer-like band in AB stacked trilayer graphene. The commensurability peak of
the monolayer-like band appeared at a lower magnetic field than that of the
bilayer-like band, which reflects the fact that the Fermi surface of the
bilayer-like band is larger than that of monolayer-like band. Rotation of the
antidot lattice relative to the crystallographic axes of graphene resulted in
anisotropic magnetoresistance, which reflects the trigonally warped Fermi
surface of the bilayer-like band. Numerical simulations of magnetoresistance
that assumed ballistic transport in the mono- and bilayer-like bands
approximately reproduced the observed magnetoresistance features. It was found
that the monolayer-like band significantly contributes to the conductivity even
though its carrier density is an order smaller than that of the bilayer-like
band. These results indicate that ballistic transport experiments could be used
for studying the anisotropic band structure of multiple-band systems.
