  We demonstrate a new approach for engineering group IV semiconductor-based
quantum photonic structures containing negatively charged silicon-vacancy
(SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond
structures are realized by combining the growth of nanoand micro-diamonds on
silicon carbide (3C or 4H polytype) substrates, with the subsequent use of
these diamond crystals as a hard mask for pattern transfer. SiV$^-$ color
centers are incorporated in diamond during its synthesis from molecular diamond
seeds (diamondoids), with no need for ionimplantation or annealing. We show
that the same growth technique can be used to grow a diamond layer controllably
doped with SiV$^-$ on top of a high purity bulk diamond, in which we
subsequently fabricate nanopillar arrays containing high quality SiV$^-$
centers. Scanning confocal photoluminescence measurements reveal optically
active SiV$^-$ lines both at room temperature and low temperature (5 K) from
all fabricated structures, and, in particular, very narrow linewidths and small
inhomogeneous broadening of SiV$^-$ lines from all-diamond nano-pillar arrays,
which is a critical requirement for quantum computation. At low temperatures (5
K) we observe in these structures the signature typical of SiV$^-$ centers in
bulk diamond, consistent with a double lambda. These results indicate that high
quality color centers can be incorporated into nanophotonic structures
synthetically with properties equivalent to those in bulk diamond, thereby
opening opportunities for applications in classical and quantum information
processing.
