  SrTiO3 templates have been used to integrate epitaxial bilayers of
ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The
Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films
on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm,
have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at
operating voltage of 4 V present long retention time well beyond 10 years and
high endurance against fatigue up to 109 cycles. The robust ferroelectric
properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using
SrTiO3 templates paves the way for the monolithic integration on silicon of
emerging memory devices based on epitaxial HfO2.
