  Cd1-xZnxTe crystals with x in the range of 0.1-0.2 were grown by the
high-pressure vertical Bridgman method from pre-synthesized CZT. Resistive
graphite heaters were used to control the temperature profiles within the
furnaces, and an argon overpressure was used to reduce the cadmium loss. The
crystals were doped with either Al, Ni, In, Ga, Ge or Sn. The doping was
carried out by three different ways: 1) by adding of the pure metals during
growth runs; 2) by adding of the tellurides of the metals during growth runs;
or 3) by inserting of the metal tellurides during synthesis of the starting CZT
material. Some of the growth process parameters were also varied. The as-grown
CZT ingots had diameters of either 15 or 38 mm. The influence of the doping on
CZT properties, particularly the conductivity type and specific electrical
resistivity, will be discussed. Energy spectra from alpha particles (U-233,
Ra-226, and U-233+Pu-239+Pu-238) and from different gamma sources (Cs-137,
Co-60, Co-57, Am-241) will be reported.
