  We have studied the electronic properties of epitaxial graphene devices
patterned in a meander shape with the length up to a few centimeters and the
width of few tens of microns. These samples show a pronounced dependence of the
resistance on temperature. Accurate comparison with theory shows that this
temperature dependence originates from the weak localization effect observed
over a broad temperature range from 1.5 K up to 77 K. The comparison allows us
to estimate the characteristic times related to quantum interference. In
addition, a large resistance enhancement with temperature is observed at the
quantum Hall regime near the filling factor of 2. Record high resistance and
its strong temperature dependence are favorable for the construction of
bolometric photodetectors.
