  We report on extensive domain wall motion in ferroelectric nanocapacitor
arrays investigated by piezoresponse force microscopy. Under a much longer or
higher bias voltage pulse, compared to typical switching pulse conditions,
domain walls start to propagate into the neighbouring capacitors initiating a
significant cross-talk. The propagation paths and the propagated area into the
neighbouring capacitors were always the same under repeated runs. The
experimental and the simulated results show that the observed cross-talk is
related to the capacitor parameters combined with local defects. The results
can be helpful to test the reliability of nanoscale ferroelectric memory
devices.
