  The paper presents the results of a study of electron-beam modification (EBM)
of VO2-switch I-V curve threshold parameters and the self-oscillation frequency
of a circuit containing such a switching device. EBM in vacuum is reversible
and the parameters are restored when exposed to air at pressure of 150 Pa. At
EBM with a dose of 3 C/cm2, the voltages of switching-on (Vth) and off (Vh), as
well as the OFF-state resistance Roff, decrease down to 50% of the initial
values, and the oscillation frequency increases by 30% at a dose of 0.7 C/cm2.
Features of physics of EBM of an oscillator are outlined considering the
contribution of the metal and semiconductor phases of the switching channel.
Con-trolled modification allows EBM forming of switches with preset parameters.
Also, it might be used in artifi-cial oscillatory neural networks for pattern
recognition based on frequency shift keying.
