  The transition metal dichalcogenide TiSe$_2$ has received significant
research attention over the past four decades. Different studies have presented
ways to suppress the 200~K charge density wave transition, vary low temperature
resistivity by several orders of magnitude, and stabilize magnetism or
superconductivity. Here we give the results of a new synthesis technique
whereby samples were grown in a high pressure environment with up to 180~bar of
argon gas. Above 100~K, properties are nearly unchanged from previous reports,
but a hysteretic resistance region that begins around 80~K, accompanied by
insulating low temperature behavior, is distinct from anything previously
observed. An accompanying decrease in carrier concentration is seen in Hall
effect measurements, and photoemission data show a removal of an electron
pocket from the Fermi surface in an insulating sample. We conclude that high
inert gas pressure synthesis accesses an underlying nonmetallic ground state in
a material long speculated to be an excitonic insulator.
