  In this work, a unified numerical model is used to determine the melting
thresholds and to investigate early stages of melting of several crystalline
semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser
pulses. A molten fraction approach is used for continuous transition over the
melting point. The results are compared with previously published theoretical
and experimental data. A survey on the thermophysical and optical properties of
the selected materials has been carried out to gather the most relevant data on
temperature dependent properties for the solid and liquid states of these
semiconductors where such data are available. A generalization of the obtained
results is established which enables evaluation of the melting thresholds for
different semiconductors based on their properties and irradiation conditions
(laser wavelength, pulse duration).
