  We develop a theory for micro-Raman scattering by single and coupled
two-donor states in silicon. We find the Raman spectra to have significant
dependence on the donor exchange splitting and the relative spatial positions
of the two donor sites. In particular, we establish a strong correlation
between the temperature dependence of the Raman peak intensity and the
interdonor exchange coupling. Micro-Raman scattering can therefore potentially
become a powerful tool to measure interqubit coupling in the development of a
Si quantum computer architecture.
