  A comprehensive model of high-concentration phosphorus diffusion has been
developed and simulation of phosphorus diffusion from a constant source
(phosphosilicate glass) at a temperature of 890 Celsius degrees for 14.25 min.
has been carried out. Such doping processes are widely used in manufacturing
modern solar cells. The proposed model combines the ideas of the drift of
silicon self-interstitials in the field of elastic stresses with the concept of
the formation of negatively charge clusters of impurity atoms. The calculated
phosphorus concentration profile is in good agreement with the experimental
one.
