  We report gate-induced enhancement of intrinsic charge rectification without
p-n junctions in chiral semiconductor Te under magnetic field B. As gating
shifts the chemical potential to the valence band maximum of Te, the charge
rectification efficiency is enhanced hundredfold. By integrating model
calculations, we attribute the charge rectification to the B-induced asymmetry
of the chiral band structure. We also show that the carrier density subject to
this asymmetry is augmented by a saddle-point structure near the valence band
maximum, which further enhances the gate-tunable charge rectification together
with its improved switchability and thermal robustness.
