  Recently, transition metal dichalcogenides (TMDCs) semiconductors have been
utilized for investigating quantum phenomena because of their unique band
structures and novel electronic properties. In a quantum dot (QD), electrons
are confined in all lateral dimensions, offering the possibility for detailed
investigation and controlled manipulation of individual quantum systems. Beyond
the definition of graphene QDs by opening an energy gap in nanoconstrictions,
with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs
semiconductors. In this paper, we review the confinement and transport of QDs
in TMDCs nanostructures. The fabrication techniques for demonstrating
two-dimensional (2D) materials nanostructures such as field-effect transistors
and QDs, mainly based on e-beam lithography and transfer assembly techniques
are discussed. Subsequently, we focus on transport through TMDCs nanostructures
and QDs. With steady improvement in nanoscale materials characterization and
using graphene as a springboard, 2D materials offer a platform that allows
creation of heterostructure QDs integrated with a variety of crystals, each of
which has entirely unique physical properties.
