  While transition metal dichalcogenide (TMD) based moire materials have been
shown to host various correlated electronic phenomena, topological states have
not been experimentally observed until now. In this work, using first
principles calculations and continuum modeling, we reveal the displacement
field induced topological moire bands in AB-stacked TMD heterobilayer
MoTe2/WSe2. Valley contrasting Chern bands with non-trivial spin texture are
formed from interlayer hybridization between MoTe2 and WSe2 bands of nominally
opposite spins. Our study establishes a recipe for creating topological bands
in AB stacked TMD bilayers in general, which provides a highly tunable platform
for realizing quantum spin Hall and interaction induced quantum anomalous Hall
effects.
