  We present a plasmonic modulator based on hybrid orthogonal silver junctions
using vanadium dioxide as the modulating material on the silicon on insulator.
The modulator has an ultra-compact footprint of 1.8{\mu}m x 1{\mu}m with a
100nm x 100nm modulating section based on the orthogonal geometry. We take
advantage of large change in the refractive index of vanadium dioxide during
its phase transition to achieve a high modulation depth of 46.89dB/{\mu}m. We
also provide a fabrication strategy for the development of this device. The
device geometry has potential applications in the development of next
generation high frequency photonic modulators for optical communications which
require a nanometer scale footprint, large modulation depth and small insertion
losses.
