  The influence of gate voltage, temperature and magnetic field on domain wall
(DW) creep dynamics is investigated in Pt/Co/GdOx films with perpendicular
magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect
technique. The DW creep velocity can be controlled by an electric field applied
to the Co/GdOx interface via a linear modulation of the activation energy
barrier with gate voltage. At low speeds, the DW velocity can be changed
significantly by a gate voltage, but the effect is diminished as the DW
velocity increases, which limits electric field control of fast DW motion.
