  One of the major roadblocks for the establishment of 2D semiconductor
technology for CMOS integrated circuits is lack of industry scalable doping
techniques that lead to 2D FETs with comparable n-type and p-type behavior.
Here we demonstrate a Chalcogen based technique to alter the surface of WSe2 to
realize enhanced ambipolar behavior along with a complete transition from n to
p-type behavior of WSe2 FETs. The technique involves dry chemistry between
Chalcogen atom and TMDC surface which leads to surface states that cause
improved hole and electron injection through the FETs. We propose such a
technique for realization of all WSe2 based CMOS integrated circuits and
therefore unveil its potential towards technology.
