  In this letter, a top-gated field effect device (FED) manufactured from
monolayer graphene is investigated. Except for graphene deposition, a
conventional top-down CMOS-compatible process flow is applied. Carrier
mobilities in graphene pseudo-MOS structures are compared to those obtained
from top-gated Graphene-FEDs. The extracted values exceed the universal
mobility of silicon and silicon-on-insulator MOSFETs.
