  High resolution total and indium differential atomic pair distribution
functions (PDFs) for In_(0.5)Ga_(0.5)As alloys have been obtained by high
energy and anomalous x-ray diffraction experiments, respectively. The first
peak in the total PDF is resolved as a doublet due to the presence of two
distinct bond lengths, In-As and Ga-As. The In differential PDF, which involves
only atomic pairs containing In, yields chemical specific information and helps
ease the structure data interpretation. Both PDFs have been fit with structure
models and the way in that the underlying cubic zinc-blende lattice of
In_(0.5)Ga_(0.5)As semiconductor alloy distorts locally to accommodate the
distinct In-As and Ga-As bond lengths present has been quantified.
