  We report on the longitudinal and Hall resistivities of a HgTe quantum well
with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH)
regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature
dependence of the QH plateau-plateau transition (PPT) widths and of variable
range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are
presented in a genuine scale form both for PPT regions and for VRH regime.
Estimations for the degree of the carrier localization length divergence reveal
a decisive role of the long-range random potential (the potential of remote
ionized impurities) in the localization - delocalization processes in the QH
regime for the system under study.
