  Multiferroic materials have undergone extensive research in the past two
decades in an effort to produce a sizable room-temperature magneto-electric
(ME) effect in either exclusive or composite materials for use in a variety of
electronic or spintronic devices. These studies have looked into the ME effect
by switching the electric polarization by the magnetic field or switching the
magnetism by the electric field. Here, an innovative way is developed to knot
the functional properties based on the tremendous modulation of electronics and
magnetization by the electric field of the topotactic phase transitions (TPT)
in heterostructures composed of metallic-magnet/TPT-material. It is divulged
that application of a nominal potential difference of 2-3 Volts induces
gigantic changes in magnetization by 100-250% leading to colossal Voltomagnetic
effect, which would be tremendously beneficial for low-power consumption
applications in spintronics. Switching electronics and magnetism by inducing
TPT through applying an electric field requires much less energy, making such
TPT-based systems promising for energy-efficient memory and logic applications
as well as opening a plethora of tremendous opportunities for applications in
different domains.
