  The current noise in long SINIS junctions at low temperatures is sensitive to
the population of the sub-gap states which is far from equilibrium even at low
bias voltages. Nonequilibrium distribution establishes due to an interplay
between voltage-driven inter-level Landau-Zener transitions and intra-level
inelastic relaxation. We show that the Fano factor is enhanced drastically,
being proportional to the number of times which particle can fly along the
Andreev trajectory before it escapes from the level due to inelastic
scattering. Combining the dc current and noise measurements one can fully
characterize the non-equilibrium kinetics in SINIS junctions.
