  Two-dimensional transition metal dichalcogenide semiconductors are intriguing
hosts for quantum light sources due to their unique opto-electronic properties.
Here we report that strain gradients induced by substrate patterning result in
spatially and spectrally isolated quantum emitters in mono- and bi-layer WSe2.
By correlating localized excitons with localized strain-variations, we show
that the quantum emitter emission energy can be red-tuned up to a remarkable
~170 meV. We probe the fine-structure, magneto-optics, and second order
coherence of a strained emitter. These results raise the prospect to
strain-engineer quantum emitter properties and deterministically create arrays
of quantum emitters in two-dimensional semiconductors.
