  Computationally guided high-throughput synthesis is used to explore the
Zn-V-N phase space, resulting in the synthesis of a novel ternary nitride
Zn$_2$VN$_3$. Following a combinatorial PVD screening, we isolate the phase and
synthesize polycrystalline Zn$_2$VN$_3$ thin films with wurtzite structure on
conventional borosilicate glass substrates. In addition, we demonstrate that
cation-disordered, but phase-pure (002)-textured, Zn$_2$VN$_3$ thin films can
be grown using epitaxial stabilization on {\alpha}-Al2O3 (0001) substrates at
remarkably low growth temperatures well below 200 {\deg}C. The structural
properties and phase composition of the Zn$_2$VN$_3$ films are studied in
detail using XRD and (S)TEM techniques. The composition as well as chemical
state of the constituent elements are studied using RBS/ERDA as well as
XPS/HAXPES methods. These analyses reveal a stoichiometric material with no
oxygen contamination, besides a thin surface oxide. We find that Zn$_2$VN$_3$
is a weakly-doped p-type semiconductor demonstrating broadband room-temperature
photoluminescence spanning the range between 2 eV and 3 eV. In addition, the
electronic properties can be tuned over a wide range via isostructural alloying
on the cation site, making this a promising material for optoelectronic
applications.
