  The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the
subband structure of a 2D electron layer is ivestigated theoretically. The
system with two levels occupied in zero magnetic field is considered and the
magnetic field induced depletion of the second subband is studied. The
confining potential and the electron dispersion relations are calculated
self-consistently, the electron- electron interaction is taken into account in
the Hartree approximation.
