  We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on
electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable
stub-matching circuit for impedance matching. We demonstrate that the gate
voltage dependent RF resistivity of graphene can be deduced even in the
presence of the electrolyte which is in direct contact with the graphene layer.
The RF resistivity is found to be consistent with its DC counterpart in the
full gate voltage range. Furthermore, in order to access the potential of
high-frequency sensing for applications, we demonstrate time-dependent gating
in solution with nanosecond time resolution.
