  We investigate the influence of an external magnetic field on the magnitude
and dephasing of the transient lateral photovoltaic effect (T-LPE) in
lithographically patterned Co lines of widths of a few microns grown over
naturally passivated p-type Si(100). The T-LPE peak-to-peak magnitude and
dephasing, measured by lock-in or through the characteristic time of laser OFF
exponential relaxation, exhibit a notable influence of the magnetization
direction of the ferromagnetic overlayer. We show experimentally and by
numerical simulations that the T-LPE magnitude is determined by the Co
anisotropic magnetoresistance. On the other hand, the magnetic field dependence
of the dephasing could be described by the influence of the Lorentz force
acting perpendiculary to both the Co magnetization and the photocarrier drift
directions. Our findings could stimulate the development of fast position
sensitive detectors with magnetically tuned magnitude and phase responses.
