  We report an isothermal electric field-induced first-order phase transition
from Mott-insulator to the metallic state in the epitaxial thin film of
V$_2$O$_3$ in the temperature regime below its Mott transition temperature
$\approx$ 180 K. This isothermal electric field induced transition is
accompanied by interesting electro-thermal history effects, which depend on the
measurement paths followed in the electric field - temperature phase space.
These interesting properties result in tuneable resistive switching and
distinct memristive behavior in V$_2$O$_3$. A generalized framework of
disorder-influenced first-order phase transition in combination with a resistor
network model has been used to explain the observed experimental features.
These findings promise possibilities for Mott insulators to be highly
energy-efficient switches in novel technologies like neuromorphic computing.
