  The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic
space group C2/m with a = 28.0447(19) {\AA}, b = 4.0722(2) {\AA}, c =
14.7350(9) {\AA}, and $\beta$ = 118.493(5){\deg}. The structure of
La0.92Bi1.08S3 is built up of NaCl-type Bi2S5 blocks, and BiS4 and LaS5
infinitely long chains forming a compact three-dimensional framework with
parallel tunnels. Optical spectroscopy and resistivity measurements reveal a
semiconducting behavior with a band gap of ~ 1 eV and activation energy for
transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers
of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase
transitions from 2 to 300 K. Band structure calculations at the density
functional theory level confirm the semiconducting nature and the indirect gap
of La0.92Bi1.08S3.
