  We compare the models that have been proposed in the literature for the
atomic structure of the 90-degree partial dislocation in the homopolar
semiconductors, silicon, diamond, and germanium. In particular, we examine the
traditional single-period and our recently proposed double-period core
structures. Ab-initio and tight-binding results on the core energies are
discussed, and the geometries are compared in light of the available
experimental information about dislocations in these systems. The double-period
geometry is found to be the ground-state structure in all three materials. We
address boundary-conditions issues that have been recently raised about these
results. The structures of point excitations (kinks, solitons, and kink-soliton
complexes) in the two geometries are also reviewed.
