  In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky
barrier diodes (SBD) on Si substrate with a recessed-anode structure. The
optimized rapid etch process provides results in improving etching quality with
a 0.26-nm roughness of the anode recessed surface. By using the high work
function metal Pt as the Schottky electrode, a low Von of 0.71 V is obtained
with a high uniformity of 0.023 V for 40 devices. Supported by the flat anode
recess surface and related field plate design, the SBD device with the
anode-cathode spacing of 15 um show the Ron,sp of 1.53 mOhm.cm2 only, the
breakdown voltage can reach 1592 V with a high power FOM (Figure-of-Merit) of
1656 MW/cm2. For the SBD device with the anode-cathode spacing of 30 um, the
breakdown voltage can be as high as 2521 V and the power FOM is 1244 MW/cm2.
