  The calculations of the charge distribution in C$_{60}$-based FET structure
are presented. A simple model is proposed to describe the distribution of the
injected electrons or holes between two-dimensional layers. The calculations
show that the relative charge distribution between the layers turns to be
independent on the total amount of injected charges. The charge density is
maximal on the surface layer and drops exponentially with the depth increase.
The relative amounts of injected charge involved in the top layer are 73 and 64
per cent in the case of electron and hole injection, respectively. Thus, the
charge localization on the crystal surface turns to be markedly different from
near complete one that was obtained earlier within tight- binding model for the
charge concentration providing superconductivity.
