  In this work we carry out a theoretical study of the phonon-induced
resistivity in twisted double bilayer graphene (TDBG), in which two
Bernal-stacked bilayer graphene devices are rotated relative to each other by a
small angle $\theta$. We show that at small twist angles ($\theta\sim 1^\circ$)
the effective mass of the TDBG system is greatly enhanced, leading to a
drastically increased phonon-induced resistivity in the high-temperature limit
where phonon scattering leads to a linearly increasing resistivity with
increasing temperature. We also discuss possible implications of our theory on
superconductivity in such a system, and provide an order of magnitude
estimation of the superconducting transition temperature.
