  In this work, we present a method for targeted, maskless, and scalable
fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide
(SiC) using focused ion beam. The resolution of implanted VSi defects is
limited to a few tens of nanometers, defined by the diameter of the ion beam.
Firstly, we studied the photoluminescence (PL) spectrum and optically detected
magnetic resonance (ODMR) of the generated defect spin ensemble, confirming
that the synthesized centers were in the desired defect state. Then we
investigated the fluorescence properties of single VSi defects and our
measurements indicate the presence of a photostable single photon source.
Finally, we find that the Si++ ion to VSi defect conversion yield increases as
the implanted dose decreases. The reliable production of VSi defects in silicon
carbide could pave the way for its applications in quantum photonics and
quantum information processing.
