  Element semiconductor Te is very popular in both fundamental electronic
structure study, and device fabrication research area due to its unique band
structure. Specifically, in low temperatures, Te possesses strong quantum
oscillations with magnetic field applied in basal plane, either following
Shubnikov-de Haas (SdH) oscillation rule or following log-periodic oscillation
rule. With magnetic field applied along the [001] direction, the SdH
oscillations are attributed to the two-dimensional hole gas (2DHG) surface
states. Here we reported an interesting SdH oscillation in Te-based single
crystals, with the magnetic field applied along the [001] direction of the
crystals, showing the maximum oscillation intensity at ~ 75 K, and still
traceable at 200 K, which indicates a rather hot 2DHG state. The nontrivial
Berry phase can be also obtained from the oscillations, implying the
contribution from topological states. More importantly, the high temperature
SdH oscillation phenomena are observed in different Te single crystals samples,
and Te single crystals with nonmagnetic/magnetic dopants, showing robustness to
bulk defects. Therefore, the oscillation may be contributed by the bulk
symmetry protected hot 2DHG states, which will offer a new platform for
high-temperature quantum transport studies.
