  Spin gapless semiconductor (SGS) has attracted long attention since its
theoretical prediction, while concrete experimental hints are still lack in the
relevant Heusler alloys. Here in this work, by preparing the series alloys of
Mn2CoGa1-xAlx (x=0, 0.25, 0.5, 0.75 and 1), we identified the vanishing of
anomalous Hall effect in the ferromagnetic Mn2CoGa (or x=0.25) alloy in a wide
temperature interval, accompanying with growing contribution from the ordinary
Hall effect. As a result, comparatively low carrier density (1020 cm-3) and
high carrier mobility (150 cm2/Vs) are obtained in Mn2CoGa (or x=0.25) alloy in
the temperature range of 10-200K. These also lead to a large dip in the related
magnetoresistance at low fields. While in high Al content, despite the
magnetization behavior is not altered significantly, the Hall resistivity is
instead dominated by the anomalous one, just analogous to that widely reported
in Mn2CoAl. The distinct electrical transport behavior of x=0 and x=0.75 (or 1)
is presently understood by their possible different scattering mechanism of the
anomalous Hall effect due to the differences in atomic order and conductivity.
Our work can expand the existing understanding of the SGS properties and offer
a better SGS candidate with higher carrier mobility that can facilitate the
application in the spin-injected related devices.
