  In this work, we report on studies of graphene exposed to tritium gas in a
controlled environment. The single layer graphene on a $\textrm{SiO}_2$/Si
substrate was exposed to 400 mbar of $\textrm{T}_2$ for a total time of
$\approx$ 55 h. The resistivity of the graphene sample was measured $\textit{in
situ}$ during tritium exposure using the Van der Pauw method. We found that the
sheet resistance increases by three orders of magnitude during the exposure,
suggesting significant chemisorption of tritium. After exposure, the samples
were characterised $\textit{ex situ}$ via spatio-chemical mapping with a
confocal Raman microscope, to study the effect of tritium on the graphene
structure (tritiation yielding T-graphene), as well as the homogeneity of
modifications across the whole area of the graphene film. The Raman spectra
after tritium exposure were comparable to previously observed results in
hydrogen-loading experiments, carried out by other groups. By thermal annealing
we also could demonstrate, using Raman spectral analysis, that the structural
changes were largely reversible. Considering all observations, we conclude that
the graphene film was at least partially tritiated during the tritium exposure,
and that the graphene film by and large withstands the bombardment by electrons
from the $\beta$-decay of tritium, as well as by energetic primary and
secondary ions.
