  The disordered potential landscape in an InGaAs/InAlAs two-dimensional
electron gas patterned into narrow wires is investigated by means of scanning
gate microscopy. It is found that scanning a negatively charged tip above
particular sites of the wires produces conductance oscillations that are
periodic in the tip voltage. These oscillations take the shape of concentric
circles whose number and diameter increase for more negative tip voltages until
full depletion occurs in the probed region. These observations cannot be
explained by charging events in material traps, but are consistent with Coulomb
blockade in quantum dots forming when the potential fluctuations are raised
locally at the Fermi level by the gating action of the tip. This interpretation
is supported by simple electrostatic simulations in the case of a disorder
potential induced by ionized dopants. This work represents a local
investigation of the mechanisms responsible for the disorder-induced
metal-to-insulator transition observed in macroscopic two-dimensional electron
systems at low enough density.
