  Yttrium Iron Garnet based tunable magnetostatic wave and spin wave devices
are poised to revolutionize the fields of Magnonics, Spintronics, Microwave
devices, and quantum information science. The magnetic bias required for
operating and tuning these devices is traditionally achieved through large
power-hungry electromagnets, which significantly restraints the integration
scalability, energy efficiency and individual resonator addressability. While
controlling the magnetism of YIG mediated through its
magnetostrictive/magnetoelastic interaction would address this constraint and
enable novel strain/stress coupled magnetostatic wave (MSW) and spin wave (SW)
devices, effective real-time strain-induced magnetism change in YIG remains
elusive due to its weak magnetoelastic coupling efficiency and substrate
clamping effect. We demonstrate a heterogeneous YIG-on-Si MSW resonator with a
suspended thin-film device structure, which allows significant straining of YIG
to generate giant magnetism change in YIG. By straining the YIG thin-film in
real-time up to 1.06%, we show, for the first time, a 1.837 GHz
frequency-strain tuning in MSW/SW resonators, which is equivalent to an
effective strain-induced magnetocrystalline anisotropy field of 642 Oe. This is
significantly higher than the previous state-of-the-art of 0.27 GHz of strain
tuning in YIG. The unprecedented strain tunability of these YIG resonators
paves the way for novel energy-efficient integrated on-chip solutions for
tunable microwave, photonic, magnonic, and spintronic devices.
