  We studied transport through ultra-small Si quantum dot transistors
fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K,
the devices show single-electron or single-hole transport through the
lithographically defined dot. At T<4K, current through the devices is
characterized by multidot transport. From the analysis of the transport in
samples with double-dot characteristics, we conclude that extra dots are formed
inside the thermally grown gate oxide which surrounds the lithographically
defined dot.
