  Two-dimensional electron systems (2DESs) confined to the surface of
narrowband semiconductors have attracted great interest since they can easily
integrate with superconductivity (or ferromagnetism) enabling new possibilities
in hybrid device architectures and study of exotic states in proximity of
superconductors. In this work, we study indium arsenide heterostructures where
combination of clean interface with superconductivity, high mobility and
spin-orbit coupling can be achieved. The weak antilocalization measurements
indicate presence of strong spin-orbit coupling at high densities. We study the
magnetotransport as a function of top barrier and density and report clear
observation of integer quantum Hall states. We report improved electron
mobility reaching up to 44,000 cm$^{2}$/Vs in undoped heterstructures and well
developed integer quantum Hall states starting as low as 2.5~T.
