  The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a
field effect transistor configuration has been measured in ultra-high vacuum
and following exposure to air. The amplitude of the normalized current spectral
noise density is independent of source-drain current, indicating the noise is
due to mobility rather than number fluctuations. Hooge's constant for s-CNT is
found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is
substantially degreased by exposing the devices to air.
