  In this work we present a study on the negative differential resistance
behavior and the impact of various deformations {like ripples, twist, wrap} and
defects like vacancies and edge roughness on the electronic properties of
short-channel MoS2 armchair nanoribbon MOSFETs. The effect of deformation {3 to
7 degree twist or wrap and 0.3 to 0.7 Ang rippling amplitude} and defects on a
10 nm MoS2 ANR FET is evaluated by the density functional tight binding theory
and the non-equilibrium Green`s function approach. We study the channel density
of states, transmission spectra and the ID VD characteristics of such devices
under the varying conditions, with focus on the negative differential
resistance behavior. Our results show significant change in the NDR peak to
valley ratio and the NDR window with such minor intrinsic deformations,
especially with the rippling.
