  Layered bismuthides of the family ATM2Bi2 are showing very interesting
structural and physical properties. Here, we report crystal growth and
characterization of new ternary layered bismuthides: RbCd2Bi2, RbZn2Bi2 and
KZn2Bi2. Single crystals were grown by self-flux technique. As grown crystals
were characterized by combination of powder X-ray diffraction, scanning
electron microscopy, energy-dispersive X-ray spectroscopy and single crystal
X-ray diffraction. All novel compounds crystallize in layered ThCr2Si2
structure type with plate-like morphology with weak bonding between layers.
Significant structural difference between RbCd2Bi2 and AZn2Bi2 (A=K, Rb) was
found.
