  Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy,
and their electrical and magneto-transport properties measured for the first
time. X-ray diffraction and vibrating sample magnetometry measurements
confirmed the crystalline ferromagnetic Fe$_2$Ge phase. The observed high
temperature maximum in the longitudinal resistivity, as well as the observed
suppression of electron-magnon scattering at low temperatures, point to the
presence of strong spin polarization in this material. Measurements of the Hall
resistivity, $\rho_{xy}$, show contributions from both the ordinary Hall effect
and anomalous Hall effect, $\rho_{xy}^{AH}$, from which we determined the
charge carrier concentration and mobility. Measurements also show a small
negative magnetoresistance in both the longitudinal and transverse geometries.
Fe$_2$Ge holds promise as a useful spintronic material, especially for its
semiconductor compatibility.
