  We have performed the bulk-sensitive high-resolution soft x-ray photoemission
study of a Kondo semiconductor CeRhAs and related compounds CeNiSn and CePdSn.
The comparison of the spectra of polycrystalline CePdSn on the fractured and
scraped surfaces shows that the fracturing of the samples is much better than
the scraping in order to obtain intrinsic photoemission spectra. The Ce 4d
core-level spectra show clear differences in the electronic states among the
materials.
