  $\beta$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a
Gallium atomic beam etching technique, with excellent field strength and power
device figure of merit, are demonstrated. Trench formation was accomplished by
a low-damage Ga flux etch that enables near-ideal forward operating
characteristics that are independent of fin orientation. The reverse breakdown
field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage
as of 1.45 kV. This result demonstrates the potential for Ga atomic beam
etching and high-quality dielectric layers for improved performance in
$\beta$-Ga$_2$O$_3$ vertical power devices.
