  Recent work by Kopp and Mannhart on novel electronic systems formed at oxide
interfaces has shown interesting effects on the capacitances of these devices.
We employ inhomogeneous dynamical mean-field theory to calculate the
capacitance of multilayered nanostructures. These multilayered nanostructures
are composed of semi-infinite metallic leads coupled via a strongly correlated
dielectric barrier region. The barrier region can be adjusted from a metallic
regime to a Mott insulator through adjusting the interaction strength. We
examine the effects of varying the barrier width, temperature, potential
difference, screening length, and chemical potential. We find that the
interaction strength has a relatively strong effect on the capacitance, while
the potential and temperature show weaker dependence.
