  A heterojunction-like device consisting of FTO/CeO2/electrolyte/FTO is
established with distinct transport performance, where FTO denotes F-doped
transparent conducting glass, and the electrolyte is LiI and I2 in
acetonitrile. The resistive switching behavior is observed, being induced
through applying sufficient negative pulse as well as light illumination. The
endurance measurements confirm that the write/erase periodic operation is
reproducible and stable in the present device. Furthermore, the retention
measurements demonstrate that the information can be stored temporarily for
about 100 seconds. A possible mechanism regarding the formation of diiodide
radical is proposed to give a reasonable explanation for the observed switching
behavior.
