  Being able to combine different materials allows taking advantage of
different properties and device engineering that cannot be found or exploited
within a single material system. In quantum nano-photonics, one might want to
increase the device functionalities by, for instance, combining efficient
classical and quantum light emission available in III-V semiconductors,
low-loss light propagation accessible in silicon-based materials, fast
electro-optical properties of lithium niobate and broadband reflectors and/or
buried metallic contacts for local electric field application or electrical
injection of emitters. We propose a transfer printing technique based on the
removal of arrays of free-standing membranes and their deposition onto a host
material using a thermal release adhesive tape-assisted process. This approach
is versatile, in that it poses limited restrictions on the transferred and host
materials. In particular, we transfer 190 nm-thick GaAs membranes, with
dimensions up to about 260$\mu$m x 80$\mu$m, containing InAs quantum dots, onto
a gold substrate. We show that the presence of a back reflector combined with
the etching of micro-pillars significantly increases the extraction efficiency
of quantum light, reaching photon fluxes, from a single quantum dot line,
exceeding 8 x 10$^5$ photons per second, which is four times higher than the
highest count rates measured, on the same chip, from emitters outside the
pillars. Given the versatility and the ease of the process, this technique
opens the path to the realisation of hybrid quantum and nano-photonic devices
that can combine virtually any material that can be undercut to realise
free-standing membranes that are then transferred onto any host substrate,
without specific compatibility issues and/or requirements.
