  Semiconductor nanowire (NW) lasers are a promising technology for the
realisation of coherent optical sources with extremely small footprint. To
fully realize their potential as building blocks in on-chip photonic systems,
scalable methods are required for dealing with large populations of
inhomogeneous devices that are typically randomly distributed on host
substrates. In this work two complementary, high-throughput techniques are
combined: the characterisation of nanowire laser populations using automated
optical microscopy, and a high accuracy transfer printing process with
automatic device spatial registration and transfer. In this work a population
of NW lasers is characterised, binned by threshold energy density and
subsequently printed in arrays onto a secondary substrate. Statistical analysis
of the transferred and control devices show that the transfer process does not
incur measurable laser damage and the threshold binning can be maintained.
Analysis is provided on the threshold and mode spectra of the device
populations to investigate the potential for using NW lasers for integrated
systems fabrication.
