  In this work, we investigate the effect of the stacking sequence in MoS2
multilayer systems on their electron transport properties, through
first-principles simulations of structural and electron transport properties.
We show that interlayer electron transport is highly sensitive to the stacking
sequence of the multilayers, with specific sequences producing much higher
electron transmission due to larger orbital interactions and band structure
effects. These results explain contrasting experimental evidence on interlayer
transport measurements as due to imperfect structural control, provide insight
on modeling and suggest ways to improve the performance of electron devices
based on MoS2 multilayer systems via multilayer structure engineering.
