  Understanding excited carrier dynamics in semiconductors is crucial for the
development of photovoltaics and efficient photonic devices. However,
overlapping spectral features in optical/NIR pump-probe spectroscopy often
render assignments of separate electron and hole carrier dynamics ambiguous.
Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin
films are directly and simultaneously observed by attosecond transient
absorption spectroscopy (ATAS) in the extreme ultraviolet at the germanium
M_{4,5}-edge (~30 eV). We decompose the ATAS spectra into contributions of
electronic state blocking and photo-induced band shifts at a carrier density of
8*10^{20}cm^{-3}. Separate electron and hole relaxation times are observed as a
function of hot carrier energies. A first order electron and hole decay of ~1
ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous
observation of electrons and holes with ATAS paves the way for investigating
few to sub-femtosecond dynamics of both holes and electrons in complex
semiconductor materials and across junctions.
