  Spin-orbit torque is a promising mechanism for writing magnetic memories,
while field-effect transistors are the gold-standard device for logic
operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed
device that couples a spin-orbit-torque-controlled ferromagnet to a
semiconducting transistor channel via the transduction in a magnetoelectric
multiferroic. This allows the SOTFET to operate as both a memory and a logic
device, but its realization depends on the choice of appropriate materials. In
this report, we discuss and parametrize the types of materials that can lead to
a SOTFET heterostructure.
