  The topological crystalline insulator SnTe has been grown epitaxially on a
Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p-
and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation
data suggest that the n-type carriers are Dirac fermions residing on the SnTe
(111) surface. This transport observation of the topological surface state in a
p-type topological crystalline insulator became possible due to a downward band
bending on the free SnTe surface, which appears to be of intrinsic origin.
