  We report on the investigation of vibrational and electronic properties of
the Pb doped dichalcogenide PbxTaSe2 using Raman scattering experiments. We
observe a marked variation of the main vibrational modes with Pb concentration
x. The concentration dependence of the vibrational modes resembles the
dependence of the vibrational modes in TaSe2 on the number of crystallographic
layers along the c axis direction [1]. The temperature and polarization
dependence of Raman spectra of PbxTaSe2 revealed additional broad modes in the
low frequency regime which are discussed in context of remnant charge density
wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2
layers.
