  We report a novel method of growing strongly-disordered superconducting
titanium nitride (TiN) thin films by reactive electron-beam deposition. The
normal state sheet resistance and superconducting critical temperature (Tc) can
be tuned by controlling the deposition pressure in the range of 1.1*10^-6 to
3.1*10^-5 mbar} and film thickness d from 10nm to 300nm. For 10nm thick films,
the sheet resistance reaches 1361 \Omega/\square and T_c = 0.77K, which
translates into an estimate for the sheet inductance as large as L_\square =
2.4nH/\square. Benefiting from the directionality of reactive evaporation, we
fabricated RF test devices with micron-sized dimensions using a resist mask and
a lift-off process, which would be impossible with sputtering or atomic layer
deposition methods. The spectroscopic measurements result in consistent sheet
inductance values in two different device geometries and the quality factors
ranged from Q = 300-2200. The loss is likely due to the presence of titanium
oxynitride in the morphological composition of our films. The flexibility of
the lift-off process suggest applications of reactively-evaporated TiN for
making supporting structures around quantum circuits, such as readout
resonators or compact on-chip filters.
