  The effects of strain, induced by a Gaussian bump, on the magnetic field
dependent transport properties of a graphene Hall bar are investigated. The
numerical simulations are performed using both classical and quantum mechanical
transport theory and we found that both approaches exhibit similar
characteristic features. The effects of the Gaussian bump are manifested by a
decrease of the bend resistance, $R_B$, around zero-magnetic field and the
occurrence of side-peaks in $R_B$. These features are explained as a
consequence of bump-assisted scattering of electrons towards different
terminals of the Hall bar. Using these features we are able to give an estimate
of the size of the bump. Additional oscillations in $R_B$ are found in the
quantum description that are due to the population/depopulation of Landau
levels. The bump has a minor influence on the Hall resistance even for very
high values of the pseudo-magnetic field. When the bump is placed outside the
center of the Hall bar valley polarized electrons can be collected in the
leads.
