  Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon,
show non-volatile current-voltage (I-V) characteristics, which are both
universal and repeatable. We have shown spectroscopic evidence of the
introduction of carbon-based impurity states inside the existing larger bandgap
effectively creating a smaller bandgap which we suggest could enable Mott-like
correlation effect. Our findings indicate new insights for yet to be understood
unipolar and nonpolar resistive switching in the TMOs and PTMOs. We have shown
that device switching is not thermal-energy dependent and have developed an
electronic-dominated switching model that allows for the extreme temperature
operation (from 1.5 K to 423 K) and state retention up to 673 K for a 1-hour
bake. Importantly, we have optimized the technology in an industrial process
and demonstrated integrated 1-transistor/1-resistor (1T1R) arrays up to 1 kbit
with 47 nm devices on 300 mm wafers for advanced node CMOS-compatible
correlated electron RAM (CeRAM). These devices are shown to operate with 2 ns
write pulses and retain the memory states up to 200 C for 24 hours. The
collection of attributes shown, including scalability to state-of-the-art
dimensions, non-volatile operation to extreme low and high temperatures, fast
write, and reduced stochasticity as compared to filamentary memories such as
ReRAMs show the potential for a highly capable two-terminal back-end-of-line
non-volatile memory.
