  We report the first observation of stable single photon sources in silicon
carbide (SiC). These sources are extremely bright and operate at room
temperature demonstrating that SiC is a viable material in which to realize
various quantum information, computation and photonic applications. The maximum
single photon count rate detected is 700k counts/s with an inferred quantum
efficiency around 70%. The single photon sources are due to intrinsic deep
level defects constituted of carbon antisite-vacancy pairs. These are shown to
be formed controllably by electron irradiation. The variability of the temporal
kinetics of these single defects is investigated in detail.
