  We present the experimental data of the electric features of the silicon
nanosandwichstructures obtained by silicon planar technology in the frameworks
of the Hall geometry that represent the ultra-shallow silicon quantum well of 2
nm wide that are confined by delta-barrier heavily doped with boron, which
create the edge channels used as the phase controllers of electric signals. The
formation of the negative-U dipole boron centers, which appear to confine the
edge channels, results in the effective mass dropping and corresponding
reduction of the electron-electron interaction thereby giving rise to the
macroscopic quantum phenomena at high temperatures up to room temperature. The
phase control of the longitudinal conductance is observed by changing either
the magnitude of the source-drain current or the voltage applied to the
external gate of the silicon nanosandwiches within the quantum Faraday effect.
