  Applicability of dilute magnetic semiconductors (DMS) in electronic devices
relies upon the understanding and control of their magnetic anisotropy. This
paper explores one of the ways in engineering magnetic anisotropy in epitaxial
layers of DMS by forming them into magnonic structures. For this purpose the
canonical ferromagnetic DMS, namely (Ga,Mn)As, is employed. The anti-dot
systems based on (Ga,Mn)As layers of various thicknesses are fabricated with
focused ion beam apparatus and studied by means of microscopy as well as
magnetometry. The magnetometric data - collected along two nonequivalent
in-plane crystallographic directions of (Ga,Mn)As: [110] and [1-10] - shows the
effect of structuring on high-field magnetization process, whereas no
significant change of the width of hysteresis loop in anti-dot samples is
observed.
