  Here we propose a solid-state quantum memory that does not require spectral
holeburning, instead using strong rephasing pulses like traditional photon echo
techniques. The memory uses external broadening fields to reduce the optical
depth and so switch off the collective atom-light interaction when desired. The
proposed memory should allow operation with reasonable efficiency in a much
broader range of material systems, for instance Er3+ doped crystals which have
a transition at 1.5 um. We present analytic theory supported by numerical
calculations and initial experiments.
