  The defect-mediated hexagonal boron nitride (hBN) supercell display the
visible optical spectra and electronic characteristics. The defects in the hBN
supercell include the atomic vacancy, antisite, antisite vacancy, and
substitution of a foreign atom for boron or nitrogen. The hBN supercell with
VB, CB, and NB-VN has the high electron density of states across the Fermi
level which indicates the high conductive electronic characteristics. The hBN
with defects including atomic vacancy, antisite vacancy, and substitution of a
foreign atom for boron or nitride exhibit the distinct spin-resolved optical
and electronics characteristics, while the defects of boron and nitrogen
antisite do not display the spin-resolved optical characteristics. The hBN with
positively charged defects has a dominant optical and electronic
characteristics at the longer spectral region.
