  Yttrium orthosilicate (Y2SiO5 - YSO) is one of the most promising crystals to
host rare-earth (RE) ions for quantum technologies applications. In this
matrix, they indeed exhibit narrow optical and spin linewidths that can be
exploited to develop quantum memories or quantum information processing
capabilities. In this paper, we propose a new method to grow RE doped silicate
thin films on silicon wafers based on direct liquid injection chemical vapour
deposition (DLI-CVD). We optimize the deposition and annealing conditions to
achieve formation of the high temperature X2-YSO phase. The phase purity and
crystalline quality of the films are assessed by evaluating the optical
properties of Eu3+ ions embedded in this oxide matrix. In view of the results,
we discuss the possible phase formation mechanisms, and the potential of this
new wafer-compatible form of YSO for quantum technologies applications.
