  This paper presents the preliminary results of optical characterization using
spectroscopic ellipsometry of wurtzite indium gallium nitride (InxGa1-xN) thin
films with medium indium content (0.38<x<0.68) that were deposited on silicon
dioxide using plasma-enhanced evaporation. A Kramers-Kronig consistent
parametric analytical model using Gaussian oscillators to describe the
absorption spectra has been developed to extract the real and imaginary
components of the dielectric function ({\epsilon}1, {\epsilon}2) of InxGa1-xN
films. Scanning electron microscope (SEM) images are presented to examine film
microstructure and verify film thicknesses determined from ellipsometry
modelling. This fitting procedure, model, and parameters can be employed in the
future to extract physical parameters from ellipsometric data from other
InxGa1-xN films.
