  Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and
double quantum well interband tunnel heterojunctions are simulated rigorously
using the non-equilibrium Green's function formalism for coherent and
dissipative quantum transport in combination with a simple two-band
tight-binding model for the electronic structure. A realistic band profile and
associated built-in electrostatic field is obtained via self-consistent
coupling of the transport formalism to Poisson's equation. The model reproduces
experimentally observed features in the current-voltage characteristics of the
device, such as the structure appearing in the negative differential resistance
regime due to quantization of emitter states. Local maps of density of states
and current spectrum reveal the impact of quasi-bound states, electric fields
and electron-phonon scattering on the interband tunneling current. In this way,
resonances appearing in the current through the double quantum well structure
in the negative differential resistance regime can be related to the alignment
of subbands in the coupled quantum wells.
