  We consider the effect of the Rashba spin-orbital interaction and space
charge in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction
where the spin current is severely affected by the doping, band structure and
charge screening in the semiconductor. In diffusion region, if the the
resistance of the tunneling barriers is comparable to the semiconductor
resistance, the magnetoresistance of this junction can be greatly enhanced
under appropriate doping by the co-ordination between the Rashba effect and
screened Coulomb interaction in the nonequilibrium transport processes within
Hartree approximation.
