  Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on
Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant
4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed
large area Pulsed Laser Deposition (PLD) setup. We study and show the results
of the effect of an additional SrRuO3 buffer layer on the growth temperature
dependent structural and magnetic properties of LSMO films. With the
introduction of a thin SrRuO3 layer on top of the buffer stack, LSMO films show
ferromagnetic behaviour for growth temperatures as low as 250C. We suggest that
occurrence of epitaxial crystal growth of LSMO at these low growth temperatures
can be understood by an improved surface diffusion, which ensures sufficient
intermixing of surface species for formation of the correct phase. This
intermixing is necessary because the full plume is collected on the 4" wafer
resulting in a compositional varying flux of species on the wafer, in contrast
to small scale experiments.
