  We critically analyze the recently reported observation of integer (IQAHE)
and fractional (FQAHE) quantum anomalous Hall effects at zero applied magnetic
field in pentalayer graphene. Our quantitative activation and variable range
hopping transport analysis of the experimental data reveals that the observed
IQAHE and FQAHE at different fillings all have similar excitation gaps of the
order of $5-10$ K. In addition, we also find that the observed FQAHE manifests
a large hidden background contact series resistance >10 k$\Omega$ of unknown
origin whereas this contact resistance is much smaller ~500 $\Omega$ in the
observed IQAHE. Both of these findings are surprising as well as inconsistent
with the well-established phenomenology of the corresponding high-field integer
and fractional quantum Hall effects in 2D semiconductor systems.
