  Transport measurements in thin film junctions of NbN-$\rm Bi_2Se_3$ exhibit
tunneling as well as bound state resonances. The junctions are prepared by
pulsed laser deposition of a NbN layer through a 25 $\mu$m wide gold wire
shadow mask bisecting the wafer into two halves, on a $\rm Bi_2Se_3$ blanket
film without further patterning. This results in two independent near-edge
junctions connected in series via the 25 $\mu m$ long and 10 mm wide area of
the uncapped $\rm Bi_2Se_3$ layer. Conductance spectra measured across the wire
masked trench at different locations on the wafer show that some junctions have
tunneling behavior with pronounced coherence peaks at $\pm 2\Delta$ where
$\Delta \simeq$ 1 meV, while others have zero bias conductance peaks and series
of bound states at higher bias. The later can be attributed to zero energy
Majorana bound states or to the more conventional Andreev bound states. Based
on the present results, we can not distinguish between these two scenarios.
