  Quantum anomalous Hall effect(QAHE) can only be realized at extremely low
temperatures in magnetically doped topological insulators(TIs) due to
limitations inherent with the doping precess. In an effort to boost the
quantization temperature of QAHE, magnetic proximity effect in magnetic
insulator/TI heterostructures has been extensively investigated. However, the
observed anomalous Hall resistance has never been more than several Ohms,
presumably owing to the interfacial disorders caused by the structural and
chemical mismatch. Here, we show that, by growing (BixSb1-x)2Te3(BST) thin
films on structurally and chemically well-matched, ferromagnetic-insulating
CeGeTe3(CGT) substrates, the proximity-induced anomalous Hall resistance can be
enhanced by more than an order of magnitude. This sheds light on the importance
of structural and chemical match for magnetic insulator/TI proximity systems.
