  Critical temperature regions for resistive switching were found based on
HfAlO resistive switching memory. From 5 K to 300 K, the resistive switching
appears at 60 K, and then a reversible bipolar switching between the two states
is observed at above 150 K. It is suggested that the resistive switching
characteristics of the binary transitional metal oxides are governed by thermal
assisted percolating conductive paths. The process of charge trap/de-trapping
under the external electrical field plays a dominated role with the assumption
of the same Joule heating generated by internal conductive filament at
different temperatures.
