  We propose a novel Forked-Contacts, Dynamically-Doped Multigate transistor as
ultimate scaling booster for both Si and 2D materials in aggressively-scaled
nanosheet devices. Using accurate dissipative DFT-NEGF atomistic-simulation
fundamentals and cell layout extrinsics, we demonstrate superior and optimal
device characteristics and invertor energy - delays down to sub-30-nm pitches,
i.e., a 10 nm scaling boost compared to the nanosheet MOSFET references.
