  We have studied theoretically the type-II GaAsSb capped InAs quantum dots for
two structures differing in the composition of the capping layer, being either
(i) constant or (ii) with Sb accumulation above the apex of the dot. We have
found that the hole states are segmented and resemble the states in the quantum
dot molecules. The two-hole states form singlet and triplet with the splitting
energy of 4{\mu}eV / 325{\mu}eV for the case (i) / (ii). We have also tested
the possibility to tune the splitting by vertically applied magnetic field. As
the predicted tunability range was limited, we propose an approach for its
enhancement.
