  The Rashba physics has been intensively studied in the field of spin
orbitronics, for the purpose of searching novel physical properties and the FM
magnetization switching for technology applications. Here, we report the
observation of the inverse Edelstein effect up to room temperature in the
Rashba-split 2DEG between two insulating oxides SrTiO3 and LaAlO3 with the
LaAlO3 layer thickness from 3 to 40 unit cells (UC). We further demonstrate
that the spin voltage could be dramatically manipulated by electric field
effect for the 2DEG between SrTiO3 and 3 UC LaAlO3. These results demonstrate
that the Rashba-split 2DEG at the complex oxide interface can be used for room
temperature efficient charge-and-spin conversion for the generation and
detection of spin current.
