  A boron-oxide termination of the diamond (100) surface has been formed by
depositing molecular boron oxide $\rm{B_2O_3}$ onto the hydrogen-terminated
(100) diamond surface under ultrahigh vacuum conditions and annealing to
$\rm{950^{\circ} C}$. The resulting termination was highly oriented and
chemically homogeneous, although further optimisation is required to increase
the surface coverage beyond the 0.4 ML achieved here. This work demonstrates
the possibility of using molecular deposition under ultrahigh vacuum conditions
for complex surface engineering of the diamond surface, and may be a first step
in an alternative approach to fabricating boron doped delta layers in diamond.
