  New technologies are necessary for the unprecedented expansion of
connectivity and communications in the modern technological society. The
specific needs of wireless communication systems in 5G and beyond, as well as
devices for the future deployment of Internet of Things has caused that the
International Technology Roadmap for Semiconductors, which is the strategic
planning document of the semiconductor industry, considered since 2011,
graphene and related materials (GRMs) as promising candidates for the future of
electronics. Graphene, a one-atom-thick of carbon, is a promising material for
high-frequency applications due to its intrinsic superior carrier mobility and
very high saturation velocity. These exceptional carrier transport properties
suggest that GRM-based field-effect transistors could potentially outperform
other technologies.
  This thesis presents a body of work on the modelling, performance prediction
and simulation of GRM-based field-effect transistors and circuits. The main
goal of this work is to provide models and tools to ease the following issues:
(i) gaining technological control of single layer and bilayer graphene devices
and, more generally, devices based on 2D materials, (ii) assessment of
radio-frequency (RF) performance and microwave stability, (iii) benchmarking
against other existing technologies, (iv) providing guidance for device and
circuit design, (v) simulation of circuits formed by GRM-based transistors.
