  Edge-TCT and charge collection measurements with passive test structures made
in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of
over 3 k$\Omega$cm are presented. Measurements were made before and after
irradiation with reactor neutrons up to 2$\cdot$10$^{15}$
n$_{\mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700
$\mu$m) with substrate biased through the implant on top and thinned (200
$\mu$m) with processed and metallised back plane.
  Depleted depth was estimated with Edge-TCT and collected charge was measured
with $^{90}$Sr source using an external amplifier with 25 ns shaping time.
Depleted depth at given bias voltage decreased with increasing neutron fluence
but it was still larger than 70 $\mu$m at 250 V after the highest fluence.
After irradiation much higher collected charge was measured with thinned
detectors with processed back plane although the same depleted depth was
observed with Edge-TCT. Most probable value of collected charge of over 5000
electrons was measured also after irradiation to 2$\cdot$10$^{15}$
n$_{\mathrm{eq}}$/cm$^2$. This is sufficient to ensure successful operation of
these detectors at the outer layer of the pixel detector in the ATLAS
experiment at the upgraded HL-LHC.
