  A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power
spin logic devices. Here, we report on the damping-like SOT in just one
monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$
interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion
efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63
$\times$ 10$^5$ $\frac{\hbar}{2e}$ $\Omega^{-1}$ m$^{-1}$) is found to be
superior to values reported for other TMDs. The origin of this large
damping-like SOT can be found in the interfacial properties of the TaS$_2$/Py
heterostructure, and the experimental findings are complemented by the results
from density functional theory calculations. The dominance of damping-like
torque demonstrated in our study provides a promising path for designing next
generation conducting TMD based low-powered quantum memory devices.
