  In this study, high-quality thin films of the topological semimetal phase
NiTe$_2$ were prepared using molecular beam epitaxy (MBE) technique, confirmed
through X-ray diffraction with pronounced Laue oscillations. Electrical
transport experiments reveal that thick films have properties similar to bulk
materials. By employing co-deposition, we introduced either magnetic or
non-magnetic elements during the growth of thinner films, significantly
altering their electrical properties. Notably, magnetic element Cr induces
long-range ferromagnetic ordering, leading to the observation of significant
anomalous Hall effect in NiTe2 thin films. The Hall conductivity remains nearly
constant well below the Curie temperature, indicating the correlation with the
intrinsic topological nature of the band structure. Theoretical first
principles band calculations support the generation of the Weyl semimetal state
in the material through magnetic doping. These findings pave the way for
exploring more magnetic Weyl semimetal materials and related low-dimensional
quantum devices based on topological semimetal materials.
