  A systematic investigation of graphene edge contacts is provided.
Intentionally patterning monolayer graphene at the contact region creates
well-defined edge contacts that lead to a 67% enhancement in current injection
from a gold contact. Specific contact resistivity is reduced from 1372
{\Omega}m for a device with surface contacts to 456 {\Omega}m when contacts are
patterned with holes. Electrostatic doping of the graphene further reduces
contact resistivity from 519 {\Omega}m to 45 {\Omega}m, a substantial decrease
of 91%. The experimental results are supported and understood via a multi-scale
numerical model, based on density-functional-theory calculations and transport
simulations. The data is analyzed with regards to the edge perimeter and
hole-to-graphene ratio, which provides insights into optimized contact
geometries. The current work thus indicates a reliable and reproducible
approach for fabricating low resistance contacts in graphene devices. We
provide a simple guideline for contact design that can be exploited to guide
graphene and 2D material contact engineering.
