  Quantum interference between one- and two-photon absorption pathways allows
coherent control of interband transitions in unbiased bulk semiconductors;
carrier population, carrier spin polarization, photocurrent injection, and spin
current injection can all be controlled. We calculate injection spectra for
these effects using a 14x14 k.p Hamiltonian including remote band effects for
five bulk semiconductors of zinc-blende symmetry: InSb, GaSb, InP, GaAs, and
ZnSe. Microscopic expressions for spin-current injection and spin control
accounting for spin split bands are presented. We also present analytical
expressions for the injection spectra derived in the parabolic-band
approximation and compare these with the calculation nonperturbative in k.
