  In this work we describe a proposal for a graphene-based nanostructure that
modulates electric current even in the absence of a gap in the band structure.
The device consists of a graphene p-n junction that acts as a Veselago lens
that focuses ballistic electrons on the output lead. Applying external
(electric and magnetic) fields changes the position of the output focus,
reducing the transmission. Such device can be applied to low power field effect
transistors, which can benefit from graphene's high electronic mobility.
