  This paper describes the radiation response and I-V characteristics of the
stacked p-MNOS based RADFETs measured at different dose rates and irradiation
temperatures. It is shown that the enhanced charge trapping takes place at the
interface of the thick gate dielectrics in the MNOS transistors at low dose
rates (ELDRS). The sensitivity of the radiation effect to irradiation
temperature has also experimentally revealed. We associate both effects with
the temperature and dose rate dependence of the effective charge yield in the
thick oxides described within the framework of the previously proposed model.
We have also simulated the I-V characteristics of the transistors for different
total doses and irradiation conditions. It has been found the used electric and
radiation models consistently describe the observed dependencies of the RADFETs
sensitivity on dose rates and irradiation temperatures for the devices with
different thickness of insulators.
