  Electron-phonon coupling, being one of the most important parameters
governing the material evolution after ultrafast energy deposition, yet remains
the most unexplored one. In this work, we applied the dynamical coupling
approach to calculate the nonadiabatic electron-ion energy exchange in
nonequilibrium solids with the electronic temperature high above the atomic
one. It was implemented into the tight-binding molecular dynamics code, and
used to study electron-phonon coupling in various elemental metals. The
developed approach is a universal scheme applicable to electronic temperatures
up to a few electron-Volts, and to arbitrary atomic configuration and dynamics.
We demonstrate that the calculated electron-ion (electron-phonon) coupling
parameter agrees well with the available experimental data in
high-electronic-temperature regime, validating the model. The following
materials are studied here - fcc metals: Al, Ca, Ni, Cu, Sr, Y, Zr, Rh, Pd, Ag,
Ir, Pt, Au, Pb; hcp metals: Mg, Sc, Ti, Co, Zn, Tc, Ru, Cd, Hf, Re, Os; bcc
metals: V, Cr, Fe, Nb, Mo, Ba, Ta, W; diamond cubic lattice metals: Sn;
specific cases of Ga, In, Mn, Te and Se; and additionally semimetal graphite
and semiconductors Si and Ge. For many materials, we provide the first and so
far the only estimation of the electron-phonon coupling at elevated electron
temperatures, which can be used in various models simulating ultrafast energy
deposition in matter. We also discuss the dependence of the coupling parameter
on the atomic mass, temperature and density.
