  Chemical Vapor Deposition (CVD) of graphene on copper is one of the most
efficient technologies for producing high quality graphene for large areas.
Nevertheless, still high pressures and big quantities of precursor gas are
currently required. The objective of this work is to deposit graphene using the
monolayer-formation-time concept (t) from the kinetic theory of gases, which
leads to an economization of the precursor gas, a minimization of the process
pressure and the time needed to grow a graphene monolayer. Our process has been
designed taking into account the dependence of t on the pressure, the mass
particle of the gas, the sticking coefficient, and the growth temperature.
Thus, with this alternative method, based on CVD but using very-low pressure
instant pulses of precursor gas (~10^-4 Pa), we have reduced the deposition
time to the order of 10 s. We carried out the processes at temperatures below
1000 Grad Celsius with methane (CH4) as a precursor gas under High Vacuum (HV)
conditions. After Raman spectroscopy and mapping, and Scanning Electron
Microscopy (SEM) characterization of the samples, the results point to the
formation of high quality monolayer graphene on sputtered copper and silicon
substrates covering domain areas of 10^4 micron^2.
