  Current-driven switching of nonvolatile spintronic materials and devices
based on spin-orbit torques offer fast data processing speed, low power
consumption, and unlimited endurance for future information processing
applications. Analogous to conventional CMOS technology, it is important to
develop a pair of complementary spin-orbit devices with differentiated
magnetization switching senses as elementary building blocks for realizing
sophisticated logic functionalities. Various attempts using external magnetic
field or complicated stack/circuit designs have been proposed, however, plainer
and more feasible approaches are still strongly desired. Here we show that a
pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite
laser track configurations and thereby inverse field-free lateral spin-orbit
torques (LSOTs) induced switching senses can be adopted as such complementary
spin-orbit building blocks. By electrically programming the initial
magnetization states (spin down/up) of each sample, four Boolean logic gates of
AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR
gate, were obtained. Moreover, various initialization-free, working current
intensity-programmable stateful logic operations, including the material
implication (IMP) gate, were also demonstrated by regarding the magnetization
state as a logic input. Our complementary LSOT building blocks provide an
applicable way towards future efficient spin logics and in-memory computing
architectures.
