  The Thermal Boundary Resistance at the interface between a nanosized Al film
and an Al_{2}O_{3} substrate is investigated at an atomistic level. A room
temperature value of 1.4 m^{2}K/GW is found. The thermal dynamics occurring in
time-resolved thermo-reflectance experiments is then modelled via macro-physics
equations upon insertion of the materials parameters obtained from atomistic
simulations. Electrons and phonons non-equilibrium and spatio-temporal
temperatures inhomo- geneities are found to persist up to the nanosecond time
scale. These results question the validity of the commonly adopted lumped
thermal capacitance model in interpreting transient nanocalorimetry
experiments. The strategy adopted in the literature to extract the Thermal
Boundary Resistance from transient reflectivity traces is revised at the light
of the present findings. The results are of relevance beyond the specific
system, the physical picture being general and readily extendable to other
heterojunctions.
