  Silicon single-photon avalanche diode (SPAD) is a core device for
single-photon detection in the visible and the near-infrared range, and widely
used in many applications. However, due to limits of the structure design and
device fabrication for current silicon SPADs, the key parameters of detection
befficiency and timing jitter are often forced to compromise. Here, we propose
a nanostructured silicon SPAD, which achieves high detection efficiency with
excellent timing jitter simultaneously over a broad spectral range. The optical
and electric simulations show significant performance enhancement compared with
conventional silicon SPAD devices. This nanostructured devices can be easily
fabricated and thus well suited for practical applications.
