  We report on the fabrication and electrical characterisation of etched
graphene single electron transistors (SETs) of various sizes on hexagonal boron
nitride (hBN) in high magnetic fields. The electronic transport measurements
show a slight improvement compared to graphene SETs on SiO2. In particular,
SETs on hBN are more stable under the influence of perpendicular magnetic
fields up to 9T in contrast to measurements reported on SETs on SiO2. This
result indicates a reduced surface disorder potential in SETs on hBN which
might be an important step towards clean and more controllable graphene QDs.
