  In this paper, we mainly present a new simple, efficient and nondestructive
Raman scattering analysis method to study the distribution of strain in SiGe
alloy films. The method can simultaneously determine both Ge fractional
composition x and strain of SiGe films. We use the Ar+ laser lines (514.5, 488
and 457.9 nm) to detect the information of different depth of SiGe layers. The
results show that the x value (about 0.50) of Si1-xGex and the strain of the
films decrease from the interface between SiGe layers and Si substrates to SiGe
surface.
