  The manipulation of edge configurations and structures in atomically thin
transition metal dichalcogenides (TMDs) for versatile functionalization has
attracted intensive interest in recent years. The chemical vapor deposition
(CVD) approach has shown promise for TMD edge engineering of atomic edge
configurations (1H, 1T or 1T'-zigzag or armchair edges), as well as diverse
edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc). These
rich-edge TMD layers offer versatile candidates for probing the physical and
chemical properties, and exploring new applications in electronics,
optoelectronics, catalysis, sensing and quantum field. In this review, we
present an overview of the current state-of-the-art in the manipulation of TMD
atomic edges and edge-rich structures using CVD. We highlight the vast range of
unique properties associated with these edge configurations and structures and
provide insights into the opportunities afforded by such edge-functionalized
crystals. The objective of this review is to motivate further research and
development efforts in using CVD as a scalable approach to harness the benefits
of such crystal-edge engineering.
