  We present a novel reconfigurable metal-oxide-semiconductor multi-gate
transistor that can host a quadruple quantum dot in silicon. The device consist
of an industrial quadruple-gate silicon nanowire field-effect transistor.
Exploiting the corner effect, we study the versatility of the structure in the
single quantum dot and the serial double quantum dot regimes and extract the
relevant capacitance parameters. We address the fabrication variability of the
quadruple-gate approach which, paired with improved silicon fabrication
techniques, makes the corner state quantum dot approach a promising candidate
for a scalable quantum information architecture.
