  We have studied the emission properties of individual InAs quantum dots (QDs)
grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy.
Low-temperature microphotoluminescence spectroscopy shows emission from single
QDs around 1550 nm with characteristic exciton-biexciton behavior, and a
biexciton antibinding energy of more than 2 meV. Temperature-dependent
measurements reveal negligible optical-phonon induced broadening of the exciton
line up to 50 K, and emission from the exciton state clearly persists above 70
K. Furthermore, we find no measurable polarized fine structure splitting of the
exciton state within the experimental precision. These results are encouraging
for the development of a controllable photon source for fiber-based quantum
information and cryptography systems.
