  The orbital Hall effect, resulting from non-trivial quantum geometry of 2D
materials, causes the accumulation of orbital magnetic moment near the system
edges. This accumulation contributes to an electric current that flows parallel
to the edges, causing a slight decrease in resistance. The accumulation of
orbital moment and the resulting change in resistance can be modulated by an
in-plane magnetic field. In this work, we investigate this effect in
multilayered 2D materials where electrons can move between layers providing a
handle through which the resistance can be controlled. The orbital moment
dynamics differs from conventional spin dynamics, being governed by an
anisotropic effective inverse mass tensor, for which we provide a microscopic
expression. We derive phenomenological equations that describe both generation
and control of orbital moment accumulations.
