  We have measured thermoelectric power (TEP) as a function of hole
concentration per CuO2 layer, Ppl, in Y1-xCaxBa2Cu3O6 (Ppl = x/2) with no
oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl,
S290(Ppl), of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl
= z). We argue that S290(Ppl) represents a measure of the intrinsic equilibrium
electronic states of doped holes and, therefore, can be used as a common scale
for the carrier concentrations of layered cuprates. We shows that the Ppl
determined by this new universal scale is consistent with both hole
concentration microscopically determined by NQR and the hole concentration
macroscopically determined by the Cu valency. We find two characteristic
scaling temperatures, TS* and TS2*, in the TEP vs. temperature curves that
change systematically with doping. Based on the universal scale, we uncover a
universal phase diagram in which almost all the experimentally determined
pseudogap temperatures as a function of Ppl fall on two common curves; upper
pseudogap temperature defined by the TS* versus Ppl curve and lower pseudogap
temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps
are intrinsic properties of doped holes of a single CuO2 layer for all high-Tc
cuprates, Tc depends on the number of layers, therefore the inter-layer
coupling, in each individual system.
