  We explore the dielectric relaxation properties of NiFe nanowires in a
nanoporous silicon template. Dielectric data of the NiFe-silicon structure show
a strong relaxation resonance near 30K. This system shows Arrhenius type of
behavior in the temperature dependence of dissipation peaks vs. frequency. We
report magnetic field dependence of dipolar relaxation rate and the appearance
of structure in the dielectric spectrum related to multiple relaxation rates. A
magnetic field affects both the exponential prefactor in the Arrhenius formula
and the activation energy. From this field dependence we derive a simple
exponential field dependence for the prefactor and linear field approximation
for the activation energy which describes the data. We find a significant
angular dependence of the dielectric relaxation spectrum for regular silicon
and nanostructured silicon vs. magnetic field direction, and describe a simple
sum-rule that describes this dependence. We find that although similar
behaviour is observed in both template and nanostructured materials, the
NiFe-silicon shows a more complex, magnetic field dependent relaxation
spectrum.
