  We use the high spatial sensitivity of the anomalous Hall effect in the
ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr
effect, to probe the nanoscale elastic flexing behavior of a single magnetic
domain wall in a ferromagnetic thin film. Our technique allows position
sensitive characterization of the pinning site density, which we estimate to be
around 10^14 cm^{-3}. Analysis of single site depinning events and their
temperature dependence yields estimates of pinning site forces (10 pN range) as
well as the thermal deactivation energy. Finally, our data hints at a much
higher intrinsic domain wall mobility for flexing than previously observed in
optically-probed micron scale measurements.
