  We describe a method to control the insulator-metal transition at the
LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography
(ULV-EBL). Compared with previous reports that utilize conductive
atomic-force-microscope lithography (c-AFM), this approach can provide
comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x
faster than c-AFM. The writing technique is non-destructive and the conductive
state is reversible via prolonged exposure to air. Transport properties of
representative devices are measured at milli-Kelvin temperatures, where
superconducting behavior is observed. We also demonstrate the ability to create
conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying
mechanism is believed to be closely related to the same mechanism regulating
c-AFM-based methods.
