  We theoretically study the circularly polarized light-induced Floquet state
in line-node semimetals with time-reversal symmetry and inversion symmetry. It
is found that the Floquet state can show the photovoltaic anomalous Hall effect
when an applied circularly polarized light gaps out the line node in the bulk
and leave Weyl point nodes. The Hall conductivity is sensitive to the location
of Fermi level: When the Fermi level locates at the node, the Hall conductivity
depends on the radius of line node and is nearly independent of the intensity
of light. Away from the line node, the Hall conductivity is dependent on the
intensity of light. Such a sensitive Fermi-level dependence of the Hall
conductivity in the presence of a weak laser intensity can have applications in
phototransistors based on thin films of line-node semimetals.
