  We present a new fabrication method of graphene spin-valve devices which
yields enhanced spin and charge transport properties by improving both the
electrode-to-graphene and graphene-to-substrate interface. First, we prepare
Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we
mechanically transfer a graphene-hBN heterostructure onto the prepatterned
electrodes. We show that room temperature spin transport in single-, bi- and
trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion
lengths reaching 10$\mu$m combined with carrier mobilities exceeding 20,000
cm$^2$/Vs.
