  The relaxations of conductivity have been studied in the glassy regime of a
strongly disordered two-dimensional electron system in Si after a temporary
change of carrier density during the waiting time t_w. Two types of response
have been observed: a) monotonic, where relaxations exhibit aging, i.e.
dependence on history, determined by t_w and temperature; b) nonmonotonic,
where a memory of the sample history is lost. The conditions that separate the
two regimes have been also determined.
