  There are essential achievements in synthesis of interesting for creation of
compact electronic memory switched by own current structures of spin valves and
magnetic tunnel junctions with hysteretic current dependences of resistance. In
the offered message the attention to discrepancy to physical principles of a
hysteresis of resistance represented in publications is paid. It is
schematically presented how the dependences of resistance on current should
look not contradicting the energy conservation law for hysteresis dependence of
resistance on current and corresponding volt-ampere characteristic.
