  We report the multi-scale modeling and design of a gate-defined
single-electron transistor in a MoS$_{2}$ bilayer. By combining
density-functional theory and finite-element analysis, we design a surface gate
structure to electrostatically define and tune a quantum dot and its associated
tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways
for the creation of novel quantum electronic devices in two-dimensional
materials.
