  With the advances in low dimensional transition metal dichalcolgenides
(TMDCs) based metal oxide semiconductor field effect transistor (MOSFET), the
interface between semiconductors and dielectrics has received considerable
attention due to its dramatic effects on the morphology and charge transport of
semiconductors. In this study, first principle calculations were utilized to
investigate the strain effect induced by the interface between Al2O3 (0001) and
monolayer MoS2. The results indicate that Al2O3 in 1.3nm thickness can apply
the strain of 0.3% on MoS2 monolayer. The strain effect monotonically increases
with the larger thickness of the dielectric layer. Also, the study on
temperature effect indicates the monotonic lattice expansion induced by the
higher temperature. Our study proposes that the dielectric engineering can be
an effective tool for strain effect in the nanotechnology.
