  CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged
particle detection instruments. This comes mainly from their high granularity
and low material budget. However, several potential applications require a
higher read-out speed and radiation tolerance than those achieved with
available devices based on a 0.35 micrometers feature size technology. This
paper shows preliminary test results of new prototype sensors manufactured in a
0.18 micrometers process based on a high resistivity epitaxial layer of
sizeable thickness. Grounded on these observed performances, we discuss a
development strategy over the coming years to reach a full scale sensor
matching the specifications of the upgraded version of the Inner Tracking
System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up
to about 10 square meters may be equipped with pixel sensors.
