  We investigate small artificial quantum dots obtained by geometrically
controlled resistive confinement in low mobility silicon-on-insulator
nanowires. Addition spectra were recorded at low temperature for various dot
areas fixed by lithography. We compare the standard deviation of the addition
spectra with theory in the high electron concentration regime. We find that the
standard deviation scales as the inverse area of the dot and its absolute value
is comparable to the energy spacing of the one particle spectrum.
