  In this work a simple solid-on-solid (SOS) model of inhomogeneous films
epitaxial growth is presented. The results of the computer simulations based on
the random deposition (RD) enriched by a local relaxation which tends to
maximize the number of a particle-particle lateral bonds (PPLB) against
barriers blocking diffusion are presented. The influence of strength of the
atoms interactions and barriers for diffusion on film roughness and possible
bridges between the layers in tri-layered sandwich system are considered. For
magnetic layers with a nonmagnetic spacer the bridging is responsible for
direct magnetic coupling between layers. Also variations of the spacer
thickness, when scanning the film surface, is essential for uniformity of the
magnetic coupling between the layers. Number of bridges for very thin spacer,
and variation of the spacer thickness are discussed in this work.
