  We show that the quality of Nd1.85Ce0.15CuO4 films grown by pulsed laser
deposition can be enhanced by using a non-stoichiometric target with extra
copper added to suppress the formation of a parasitic (Nd, Ce)2O3 phase. The
properties of these films are less dependent on the exact annealing procedure
after deposition as compared to films grown from a stoichiometric target. Film
growth can be followed by a 1 bar oxygen annealing, after an initial vacuum
annealing, while retaining the superconducting properties and quality. This
enables the integration of electron-doped cuprates with their hole-doped
counterparts on a single chip, to create, for example, superconducting
pn-junctions.
