  For several years the electronic structure properties of the novel
two-dimensional system silicene have been studied extensively. Electron
transport across metal-silicence junctions, however, remains relatively
unexplored. To address this issue, we developed and implemented a theoretical
framework that utilizes the tight-binding Fisher-Lee relation to span
non-equilibrium Green's function (NEGF) techniques, the scattering method, and
semiclassical Boltzmann transport theory. Within this hybrid quantum-classical,
two-scale framework, we calculated transmission and reflection coefficients of
monolayer and bilayer Ag-silicene-Ag junctions using the NEGF method in
conjunction with density functional theory; derived and calculated the group
velocities; and computed resistance using the semi-classical Boltzmann
equation. We found that resistances of these junctions are $\sim${}$ 0.08 \fom$
for monolayer silicene junctions and $\sim${}$ 0.3 \fom$ for bilayer ones,
factors of $\sim$8 and $\sim$2, respectively, smaller than Sharvin resistances
estimated via the Landauer formalism.
