  Dirac-source field-effect transistors (DS-FETs) have been proposed as
promising candidates for low-power switching devices by leveraging the Dirac
cone of graphene as a low-pass energy filter. In particular, using
two-dimensional (2D) materials as the channel in a DS-FET is of interest for
ultimate scaling purposes. In this paper, we investigate the design
considerations for 2D DS-FETs using ballistic simulations based on Landauer
formalism. We study the impact of several key device parameters on the device
performance, such as graphene doping, Schottky barrier heights, and effective
mass of the 2D channel. In addition, we study the impact of non-idealities on
the performance of DS-FETs, such as graphene disorder and rethermalization, as
well as ways to mitigate them. Finally, we benchmark the performance of DS-FETs
for different channel materials, providing a guide for the proper choice of
material for 2D DS-FETs.
