  We present {\it ab initio} calculations of the spin-dependent electronic
transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation
of a spin-injection experiment. We follow a ballistic Landauer-B\"uttiker
approach for the calculation of the spin-dependent dc conductance in the
linear-responce regime, in the limit of zero temperature. We show that the bulk
band structure of the leads and of the semiconductor, and even more the
electronic structure of a clean and abrupt interface, are responsible for a
current polarisation and a magnetoresistance ratio of almost the ideal 100%, if
the transport is ballistic. In particular we study the significance of the
transmission resonances caused by the presence of two interfaces.
