  A brief review of experiments directed to study a gradual localization of
charge carriers and metal-insulator transition in samples of disordered
monolayer graphene is presented. Disorder was induced by irradiation with
different doses of heavy and light ions. Degree of disorder was controlled by
measurements of the Raman scattering spectra. The temperature dependences of
conductivity and magnetoresistance (MR) showed that at low disorder,
conductivity is governed by the weak localization and antilocalization regime.
Further increase of disorder leads to strong localization of charge carriers,
when the conductivity is described by the variable-range-hopping (VRH)
mechanism. It was observed that MR in the VRH regime is negative in
perpendicular fields and is positive in parallel magnetic fields which allowed
to reveal different mechanisms of hopping MR. Theoretical analysis is in a good
agreement with experimental data.
