  The simulation scheme for heterostructural growth of compound semiconductors
is presented based on the kinetic Monte Carlo method. The sheme is designed as
simple as possible in order to apply it for any heteroepitaxial growth on
GaAs(001) substrate. The parameters used in the simulation are determined with
the first-principles calculation to reproduce experimental RHEED intensity
curves for homoepitaxial growth of GaAs(001).
