  In this study, we have investigated the ground state energy level of
electrons in modulation doped GaAs/AlxGa1-xAs heterojunctions. For this
purpose, Schrodinger and Poisson equations are solved self consistently using
quantum genetic algorithm (QGA). Thus, we have found the potential profile, the
ground state subband energy and their corresponding envelope functions, Fermi
level, and the amount of tunneling charge from barrier to channel region. Their
dependence on various device parameters are also examined.
