  We have fabricated and studied a ballistic one-dimensional p-type quantum
wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation
doping eliminates remote ionized impurity scattering and allows high mobilities
to be achieved over a wide range of hole densities, and in particular, at very
low densities where carrier-carrier interactions are strongest. The device
exhibits clear quantized conductance plateaus with highly stable gate
characteristics. These devices provide opportunities for studying spin-orbit
coupling and interaction effects in mesoscopic hole systems in the strong
interaction regime where rs > 10.
