  In order to get homogeneous nanostructured Aluminum Nitride deposits, thin
films were grown at room temperature on [001] Si substrates by radio frequency
magnetron reactive sputtering. The deposits were analysed by Transmission
Electron Microscopy, energy dispersive X-ray spectroscopy and Auger electron
spectroscopy. Their microstructure and chemical composition were studied versus
the plasma working pressure and the radio frequency power. Systematic analysis
of cross views of the films allowed the authors to draw a
microstructure/process parameters map. Four microstructural types were
distinguished according to the decrease of the deposition rate. One is the
well-known columnar microstructure. The second one is made of interrupted
columns or fibrous grains. The third one is made of nano-sized particles (size
of the particles ranges from 1.7 to 8 nm). The fourth and last microstructure
is amorphous. The "deposit morphology-process parameters" correlation is
commented on.
