  We review the application of dynamical mean-field theory to Josephson
junctions and study how to maximize the characteristic voltage IcRn which
determines the width of a rapid single flux quantum pulse, and thereby the
operating speed in digital electronics. We study a wide class of junctions
ranging from SNS, SCmS (where Cm stands for correlated metal), SINIS (where the
insulating layer is formed from a screened dipole layer), and SNSNS structures.
Our review is focused on a survey of the physical results; the formalism has
been developed elsewhere.
