  The effect of pressure on acceptor levels and hole scattering mechanisms in
p-GaSe is investigated through Hall effect and resistivity measurements under
quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole
concentration is interpreted through a carrier statistics equation with a
single (nitrogen) or double (tin) acceptor whose ionization energies decrease
under pressure due to the dielectric constant increase. The pressure effect on
the hole mobility is also accounted for by considering the pressure
dependencies of both the phonon frequencies and the hole-phonon coupling
constants involved in the scattering rates.
