  Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with
an implanted thin p-doped multiplication layer that is designed to provide low
gain. Most importantly, LGADs are specifically engineered to provide excellent
spatial and temporal resolution simultaneously. The technology shows promising
prospects of fulfilling the 4D tracking requirements of future high energy
physics experiments. Micron Semiconductor Ltd. has fabricated LGADs with an
active thickness of 50 $\mu$m. The electrical and timing performance has been
measured and compared with devices fabricated at IMB-CNM for reference. 50
$\mu$m thin LGADs by Micron Semiconductor Ltd. were measured to have a timing
resolution in the region of 30 ps using a dedicated setup involving minimum
ionising particles produced by Sr-90. Specifically, the best timing resolution
of 26.5 ps was measured at a bias voltage of 200 V at -30{\deg}C.
