  One of the major industrial challenges is to profit from some fascinating
physical features present at the nanoscale. The production of dissipationless
nanoswitches (or nanocontacts) is one of such attractive applications.
Nevertheless, the lack of knowledge of the real efficiency of electronic
ballistic/non dissipative transport limits future innovations. For multi-valent
metallic nanosystems -where several transport channels per atom are involved-
the only experimental technique available for statistical transport
characterization is the conductance histogram. Unfortunately its interpretation
is difficult because transport and mechanical properties are intrinsically
interlaced. We perform a representative series of semiclassical molecular
dynamics simulations of aluminum nanocontact breakages, coupled to full quantum
conductance calculations, and put in evidence a linear relationship between the
conductance and the contact minimum cross-section for the geometrically favored
aluminum nanocontact configurations. Valid in a broad range of conductance
values, such relation allows the definition of a transport parameter for
nanomaterials, that represents the novel concept of ballistic resistivity.
