  Type-x device attracts considerable interest in the field of spintronics due
to its robust spin-orbit torque (SOT) induced magnetization switching, and easy
deposition technique. However, universally applicable and straightforward
detection of type-X magnetization reversal is still elusive, unlike type-Z
switching, which employs DC-based anomalous Hall effect measurement. Here, we,
demonstrated that the odd planar Hall signal (O-PHV) exhibits an odd symmetry
with the application of an external magnetic field which motivates us to
develop a reading mechanism for detecting magnetization switching of in-plane
magnetized type-X devices. We verified our DC-based reading mechanism in the
Pt/Co/NiFe/Pt stack where a thin Co layer is inserted to create dissimilar
interfaces about the NiFe layer. Remarkably, the current-induced in-plane
fields are found to be significantly large in Pt/Co/NiFe/Pt stack. Further, we
successfully employed the O-PHV method to detect the current-induced
magnetization switching. The pure DC nature of the writing and reading
mechanism of our proposed type-X detection technique through O-PHV makes it the
easiest in-plane magnetization detection technique. Moreover, the high
repeatability and easy detection of our proposed method will open new avenues
toward in-plane SOT switching based memory devices and sensors.
