  The potential barrier height at the interface formed by a metal contact and
multiple one-dimensional (1D) quasi-ballistic channels in field-effect
transistors (FETs) is evaluated across different carbon nanotube and nanowire
device technologies by means of a Landauer-B\"uttiker-based extraction
methodology (LBM) adapted for multiple 1D-channels. The extraction methodology
yields values for an effective Schottky barrier height and a gate coupling
coefficient, an indicator of the device working at the quantum capacitance
limit. The novel LBM-based approach embracing the mechanisms in 1D electronics
is compared to the conventional activation energy method not considering such
effects. The latter approach underestimates the potential barrier height at
metal-channel interfaces in comparison to the novel methodology. A test
structure based on a displaced gate device is proposed based on numerical
device simulation results towards an improved accuracy of the method.
