  A simple analytical theory of high-voltage overvolting p+-i-n+-structures
picosecond switching into conducting state by pulsed lighting has been
developed. Relationship between parameters of structure, light pulse, external
circuit and the main characteristics of the process (pulse current amplitude,
delay time and duration of switching process) have been obtained and confirmed
by numerical simulation. It was shown that the energy of picosecond light pulse
that is needed for effective switching can be reduced by 6-7 orders of
magnitude due to the intensive avalanche multiplication of electrons and holes.
