  V2O3 thin films about 10 nm thick were grown on Al2O3 (0001) by pulsed laser
deposition. The XRD analysis is in agreement with R-3c space group. Some of
them exhibit the metal / insulator transition characteristic of V2O3 bulk
material and others samples exhibit a metallic behavior. For the latter, the
XPS analysis indicates an oxidation state of +III for vanadium. There is no
metal / insulator transition around 150 K in this sample and a strongly
correlated Fermi liquid rho = AT2 behavior of the resistivity at low
temperature is observed, with a value of A of 1.2 10-4 ohm cm, 3 times larger
than the bulk value at 25 kbar.
