  Twisted bilayers of two-dimensional semiconductors offer a versatile platform
to engineer quantum states for charge carriers using moir\'e superlattice
effects. Among the systems of recent interest are twistronic
MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which
undergo reconstruction into preferential stacking domains and highly strained
domain wall networks, determining the electron/hole localization across moir\'e
superlattices. Here, we present a catalogue of options for the formation of
self-organized quantum dots and wires in lattice-reconstructed marginally
twisted MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ bilayers, fine
tuned by the twist angle between the monolayers from perfect alignment to
$\theta \sim 1^{\circ}$, and by choosing parallel or anti-parallel orientation
of their unit cells. The proposed scenarios of the quantum dots and wires
formation are found using multi-scale modelling that takes into account the
features of strain textures caused by twirling of domain wall networks.
