  With molecular beam epitaxy and topotactic chemical reaction, we prepared
NdFeAs(O,H) epitaxial thin films with various hydrogen concentrations on
5{\deg} vicinal cut MgO substrates. By measuring the resistivities along the
longitudinal and transversal directions, the ab plane and the c axis
resistivities (\{rho}_ab and \{rho}_c) were obtained. The resistivity
anisotropy {\gamma}_\{rho}=\{rho}_c \ \{rho}_ab of NdFeAs(O,H) with various
hydrogen concentrations was compared with that of NdFeAs(O,F). At the H
concentrations which led to superconducting transition temperatures Tc over 40
K, {\gamma}_\r{ho} recorded ~100-150 at 50 K. On the other hand, a low
{\gamma}_\{rho} value of 9 was observed with the mostly doped sample. The
exponent \{beta} of the ab plane resistivity obtained by fitting a power law
expression \{rho}_{ab}(T)=\{rho}_0+AT^\{beta} to the data was close to unity
down to low temperature in the vicinity where the second antiferromagnetic
phase locates, which may be related to the quantum critical point discussed at
the over-doped side of the phase diagram.
