  The focus of studies on ferromagnetic semiconductors is moving from material
issues to device functionalities based on novel phenomena often associated with
the anisotropy properties of these materials. This is driving a need for a
method to locally control the anisotropy in order to allow the elaboration of
devices. Here we present a method which provides patterning induced anisotropy
which not only can be applied locally, but also dominates over the intrinsic
material anisotropy at all temperatures.
