  The integration of advanced optoelectronic properties in nanoscale devices of
group III nitride can be realized by understanding the coupling of charge
carriers with optical excitations in these nanostructures. The native defect
induced electron-phonon coupling in GaN nanowires are reported using various
spectroscopic studies. The GaN nanowires having different native defects are
grown in atmospheric pressure chemical vapor deposition technique. X-ray
photoelectron spectroscopic analysis revealed the variation of Ga/N ratios in
nanowires having possible native defects, with respect to their growth
parameters. The analysis of characteristics features of electron-phonon
coupling in Raman spectra show the variations in carrier density and mobility
with respect to the native defects in unintentionally doped GaN nanowires. The
radiative recombination of donor acceptor pair transitions and the
corresponding LO phonon replicas observed in photoluminescence studies further
emphasize the role of native defects in electron-phonon coupling.
