  Long coherence time and compatibility with semiconductor fabrication make
spin qubits in silicon an attractive platform for quantum computing. In recent
years, hole spin qubits are being developed as they have the advantages of weak
coupling to nuclear spin noise and strong spin-orbit coupling (SOC), in
constructing high-fidelity quantum gates. However, there are relatively few
studies on the hole spin qubits in a single acceptor, which requires only low
density of the metallic gates. In particular, the investigation of flexible
tunability using controllable strain for fault-tolerant quantum gates of
acceptor-based qubits is still lacking. Here, we study the tunability of
electric dipole spin resonance (EDSR) of acceptor-based hole spin qubits with
controllable strain. The flexible tunability of LH-HH splitting and spin-hole
coupling (SHC) with the two kinds of strain can avoid high electric field at
the "sweet spot", and the operation performance of the acceptor qubits could be
optimized. Longer relaxation time or stronger EDSR coupling at low electric
field can be obtained. Moreover, with asymmetric strain, two "sweet spots" are
induced and may merge together, and form a second-order "sweet spot". As a
result, the quality factor $Q$ can reach $10^{4}$ for single-qubit operation,
with high tolerance for the electric field variation. Furthermore, the
two-qubit operation of acceptor qubits based on dipole-dipole interaction is
discussed for high-fidelity two-qubit gates. The tunability of spin qubit
properties in acceptor via strain could provide promising routes for spin-based
quantum computing.
