  In the previous studies, the ultraviolet light thermoreflectance (UV-TDTR)
signal from bulk semiconducting samples cannot be well explained by a thermal
models based on the assumption that the heat is both absorbed and probed near
the surface. A thermoreflectance (TDTR) technique was developed to directly
excite semiconductors using UV-TDTR. At {\lambda} = 400nm, the photon energy is
much greater than most semiconducting bandgaps, potentially allowing
semiconducting transducers to absorb light within about 10 nm of the surface,
potentially enabling direct measurements of semiconductor-semiconductor
interfaces. The thermoreflectance coefficient for some direct-bandgap
semiconducting materials was measured. Thermal transport models were fitted to
thermorefectance data collected from the system. The differences in the signal
for semiconductors with different doping and nanostructure features were also
studied, which should change the recombination rate. No significant changes to
the signal were observed.
