  We have investigated the intermediate valence narrow-gap semiconductor SmB6
at low temperatures using both conventional spear-anvil type point contacts as
well as mechanically controllable break junctions. The zero-bias conductance
varied between less than 0.01 mikrosiemens and up to 1 mS. The position of the
spectral anomalies, which are related to the different activation energies and
band gaps of SmB6, did not depend on the the contact size. Two different
regimes of charge transport could be distinguished: Contacts with large zero -
bias conductance are in the diffusive Maxwell regime. They had spectra with
only small non-linearities. Contacts with small zero - bias conductance are in
the tunnelling regime. They had larger anomalies, but still indicating a finite
45 % residual quasiparticle density of states at the Fermi level at low
temperatures of T = 0.1 K. The density of states derived from the tunelling
spectra can be decomposed into two energy-dependent parts with Eg = 21 meV and
Ed = 4.5 meV wide gaps, respectively.
