  Modern computing systems are embracing non-volatile memory (NVM) to implement
high-capacity and low-cost main memory. Elevated operating voltages of NVM
accelerate the aging of CMOS transistors in the peripheral circuitry of each
memory bank. Aggressive device scaling increases power density and temperature,
which further accelerates aging, challenging the reliable operation of
NVM-based main memory. We propose HEBE, an architectural technique to mitigate
the circuit aging-related problems of NVM-based main memory. HEBE is built on
three contributions. First, we propose a new analytical model that can
dynamically track the aging in the peripheral circuitry of each memory bank
based on the bank's utilization. Second, we develop an intelligent memory
request scheduler that exploits this aging model at run time to de-stress the
peripheral circuitry of a memory bank only when its aging exceeds a critical
threshold. Third, we introduce an isolation transistor to decouple parts of a
peripheral circuit operating at different voltages, allowing the decoupled
logic blocks to undergo long-latency de-stress operations independently and off
the critical path of memory read and write accesses, improving performance. We
evaluate HEBE with workloads from the SPEC CPU2017 Benchmark suite. Our results
show that HEBE significantly improves both performance and lifetime of
NVM-based main memory.
