  We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots
(QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic
fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg
reflector and systematically characterized by micro-photoluminescence
($\mu$-PL) measurements. One order of magnitude of QD PL intensity enhancement
is observed in comparison with as-grown samples. Combination of power-dependent
and polarization-resolved measurements reveal background-free exciton,
biexciton and dark exciton emission with resolution-limited linewidth below 35
$\mu$eV and biexciton binding energy of ~1 meV. The results are confirmed by
statistical measurements of about 20 QDs.
