  Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect
transistor that utilizes a single carbon nanotube or an array of carbon
nanotubes as the channel material instead of bulk silicon in the traditional
MOSFET structure. Since it was first demonstrated in 1998, there have been
tremendous developments in CNTFETs, which promise for an alternative material
to replace silicon in future electronics. Carbon nanotubes are promising
materials for the nano-scale electron devices such as nanotube FETs for
ultra-high density integrated circuits and quantum-effect devices for novel
intelligent circuits, which are expected to bring a breakthrough in the present
silicon technology.
  A Static Random Access Memory (SRAM) is designed to plug two needs: i) The
SRAM provides as cache memory, communicating between central processing unit
and Dynamic Random Access Memory (DRAM). ii) The SRAM technology act as driving
force for low power application since SRAM is portable compared to DRAM, and
SRAM doesn't require any refresh current. On the basis of acquired knowledge,
we present different SRAM's designed for the conventional CNTFET. HSPICE
simulations of this circuit using Stanford CNTFET model shows a great
improvement in power saving.
