  We study the charge transfer dynamics between a silicon quantum dot and an
individual phosphorous donor using the conduction through the quantum dot as a
probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide
field effect transistor) biased near threshold in the SET regime with two side
gates to control both the device conductance and the donor charge. Temperature
and magnetic field independent tunneling time is measured. We measure the
statistics of the transfer of electrons observed when the ground state D0 of
the donor is aligned with the SET states.
