  Tunable oscillatory modes of electric-field domains in doped semiconductor
superlattices are reported. The experimental investigations demonstrate the
realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the
temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes
is determined using an analytical and a numerical modeling of the dynamics of
domain formation. Three different oscillatory modes are found. Their presence
depends on the actual shape of the drift velocity curve, the doping density,
the boundary condition, and the length of the superlattice. For most bias
regions, the self-sustained oscillations are due to the formation, motion, and
recycling of the domain boundary inside the superlattice. For some biases, the
strengths of the low and high field domain change periodically in time with the
domain boundary being pinned within a few quantum wells. The dependency of the
frequency on the coupling leads to the prediction of a new type of tunable GHz
oscillator based on semiconductor superlattices.
