  This paper reports on the sensor R&D activity for the CMS pixel detector.
Devices featuring several design and technology options have been irradiated up
to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were
bump bonded to unirradiated readout chips and tested using high energy pions in
the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed
full analogue readout and therefore a good characterization of the sensors in
terms of noise and charge collection properties. The position dependence of
signal is presented and the differences between the two sensor options are
discussed.
