  We predict a magnetoresistance induced by the interfacial Rashba spin-orbit
coupling in normal metal|ferromagnetic insulator bilayer. It depends on the
angle between current and magnetization directions identically to the "spin
Hall magnetoresistance" mechanism caused by a combined action of spin Hall and
inverse spin Hall effects. Due to the identical phenomenology it is not obvious
whether the magnetoresistance reported by Nakayama et al. is a bulk metal or
interface effect. The interfacial Rashba induced magnetoresistance may be
distinguished from the bulk metal spin Hall magnetoresistance by its dependence
on the metal film thickness.
