  Formation of thin uranium hydrides films, UH2 and \b{eta}-UH3, synthesized by
a reactive dc sputtering of uranium metal, was explored using variable
deposition conditions. Obtained stable oxygen-free hydride films were studied
by a variety of methods, both in situ (photoelectron spectroscopy - XPS), and
ex-situ (x-ray diffraction - XRD, transmission electron microscopy - TEM),
electrical resistivity, and magnetometry). Both types of hydrides are
ferromagnetic, the Curie temperatures of UH2 and \b{eta}-UH3 are approx. 120
and 170 K, respectively. Ferromagnetism in the thin films is robust and does
not depend on structure details while electrical resistivity data reflect
disorder in both types of hydrides.
