  The oscillatory voltage dependence of the conductance of a quantum point
contact in the presence of a single point-like defect has been analyzed
theoretically. Such signals are detectable and may be exploited to obtain
information on defect positions below a metal surface. Both tunnel junctions
and ballistic contacts of adiabatic shape have been considered. The effect of
quantum interference has been taking into account between the principal wave
that is directly transmitted through the contact and the partial wave that is
scattered by the contact and the defect. This effect leads to oscillations of
the conductance as a function of applied voltage. We obtain the dependence of
the period and amplitude of the conductance oscillations on the position of the
defect inside the metal.
