  We report on an experimental study of low temperature tunnelling in hybrid
NbTiN/GaMnAs structures. The conductance measurements display a root mean
square V dependence, consistent with the opening of a correlation gap in the
density of states of GaMnAs. Our experiment shows that low temperature
annealing is a direct empirical tool that modifies the correlation gap and thus
the electron-electron interaction. Consistent with previous results on
boron-doped silicon we find, as a function of voltage, a transition across the
phase boundary delimiting the direct and exchange correlation regime.
