  This work presents a physics based compact model for SiC power MOSFETs that
accurately describes the I-V characteristics up to large voltages and currents.
Charge-based formulations accounting for the different physics of SiC power
MOSFETs are presented. The formulations account for the effect of the large
SiC/SiO2 interface traps density characteristic of SiC MOSFETs and its
dependence with temperature. The modeling of interface charge density is found
to be necessary to describe the electrostatics of SiC power MOSFETs when
operating at simultaneous high current and high voltage regions. The proposed
compact model accurately fits the measurement data extracted of a 160 milli
ohms, 1200V SiC power MOSFET in the complete IV plane from drain-voltage $V_d$
= 5mV up to 800 V and current ranges from few mA to 30 A.
