  We report a model for metalorganic vapor-phase epitaxy on non-planar
substrates, specifically V-grooves and pyramidal recesses, which we apply to
the growth of InGaAs nanostructures. This model, based on a set of coupled
reaction-diffusion equations, one for each facet in the system, accounts for
the facet-dependence of all kinetic processes (e.g., precursor decomposition,
adatom diffusion, and adatom lifetimes) and has been previously applied to
account for the temperature, concentration, and temporal-dependence of AlGaAs
nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses.
In the present study, the growth of In$_{0.12}$Ga$_{0.88}$As quantum wires at
the bottom of V-grooves is used to determine a set of optimized kinetic
parameters. Based on these parameters, we have modeled the growth of
In$_{0.25}$Ga$_{0.75}$As nanostructures formed in pyramidal site-controlled
quantum-dot systems, successfully producing a qualitative explanation for the
temperature-dependence of their optical properties, which have been reported in
previous studies. Finally, we present scanning electron and cross-sectional
atomic force microscopy images which show previously unreported facetting at
the bottom of the pyramidal recesses that allow quantum dot formation.
