  Band convergence is an effective strategy to improve the thermoelectric
performance of complex bandstructure thermoelectric materials. Half-Heuslers
are good candidates for band convergence studies because they have multiple
bands near the valence bad edge that can be converged through various band
engineering approaches providing power factor improvement opportunities.
Theoretical calculations to identify the outcome of band convergence employ
various approximations for the carrier scattering relaxation times (the most
common being the constant relaxation time approximation) due to the high
computational complexity involved in extracting them accurately. Here, we
compare the outcome of strain-induced band convergence under two such
scattering scenarios: i) the most commonly used constant relaxation time
approximation and ii) energy dependent inter- and intra-valley scattering
considerations for the half-Heuslers NbCoSn and TiCoSb. We show that the
outcome of band convergence on the power factor depends on the carrier
scattering assumptions, as well as the temperature. For both materials
examined, band convergence improves the power factor. For NbCoSn, however, band
convergence becomes more beneficial as temperature increases, under both
scattering relaxation time assumptions. In the case of TiCoSb, on the other
hand, constant relaxation time considerations also indicate that the relative
power factor improvement increases with temperature, but under the energy
dependent scattering time considerations, the relative improvement weakens with
temperature. This indicates that the scattering details need to be accurately
considered in band convergence studies to predict more accurate trends.
