  The direct growth of graphene on semiconducting or insulating substrates
might help to overcome main drawbacks of metal-based synthesis, like metal-atom
contaminations of graphene, transfer issues, etc. Here we present the growth of
graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and
the study of the structural and electronic properties of the obtained
interface. We found that graphene interacts weakly with the underlying Ge(110)
substrate that keeps graphene's electronic structure almost intact promoting
this interface for future graphene-semiconductor applications. The effect of
dopants in Ge on the electronic properties of graphene is also discussed.
