  The ferromagnetism of a thin GaMnAs layer with a perpendicular easy
anisotropy axis is investigated by means of several techniques, that yield a
consistent set of data on the magnetic properties and the domain structure of
this diluted ferromagnetic semiconductor. The magnetic layer was grown under
tensile strain on a relaxed GaInAs buffer layer using a procedure that limits
the density of threading dislocations. Magnetometry, magneto-transport and
polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality
of this layer, in particular through its high Curie temperature (130 K) and
well-defined magnetic anisotropy. We show that magnetization reversal is
initiated from a limited number of nucleation centers and develops by easy
domain wall propagation. Furthermore, MOKE microscopy allowed us to
characterize in detail the magnetic domain structure. In particular we show
that domain shape and wall motion are very sensitive to some defects, which
prevents a periodic arrangement of the domains. We ascribed these defects to
threading dislocations emerging in the magnetic layer, inherent to the growth
mode on a relaxed buffer.
