  We report a high-responsive hot-electron photodetector based on the
integration of an Au-MoS$_2$ junction with a silicon nitride microring
resonator (MRR) for detecting telecom-band light. The coupling of the
evanescent field of the silicon nitride MRR with the Au-MoS$_2$ Schottky
junction region enhances the hot-electron injection efficiency. The device
exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and
the moderately uniform responsivities are obtained over the wavelength range of
1500 nm-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers
possibilities for integrated optoelectronic systems.
