  The intrinsic spin-dependent transport properties of two types of lateral
VS2|MoS2 heterojunctions are systematically investigated using first-principles
calculations, and their various nanodevices with novel properties are designed.
The lateral VS2|MoS2 heterojunction diodes show a perfect rectifying effect and
are promising for the applications of Schottky diodes. A large
spin-polarization ratio is observed for the A-type device and pure
spin-mediated current is then realized. The gate voltage significantly tunes
the current and rectification ratio of their field-effect transistors (FETs).
In addition, they all have sensitive photoresponse to blue light, and could be
used as photodetector and photovoltaic device. Moreover, they generate the
effective thermally-driven current when a temperature gratitude appears between
the two terminals, suggesting them as potential thermoelectric materials.
Hence, the lateral VS2|MoS2 heterojunctions show a multifunctional nature and
have various potential applications in spintronics, optoelectronics, and spin
caloritronics.
