  Thin layers of orthorhombic uranium ({\alpha}-U) have been grown onto
buffered sapphire substrates by d.c. magnetron sputtering, resulting in the
discovery of new epitaxial matches to Ti(00.1) and Zr(00.1) surfaces. These
systems have been characterised by X-ray diffraction and reflectivity and the
optimal deposition temperatures have been determined. More advanced structural
characterisation of the known Nb(110) and W(110) buffered {\alpha}-U systems
has also been carried out, showing that past reports of the domain structures
of the U layers are incomplete. The ability of this low symmetry structure to
form crystalline matches across a range of crystallographic templates
highlights the complexity of U metal epitaxy and points naturally toward
studies of the low temperature electronic properties of {\alpha}-U as a
function of epitaxial strain.
