  Electrical control of superconductivity is critical for nanoscale
superconducting circuits including cryogenic memory elements, superconducting
field-effect transistors (FETs), and gate-tunable qubits. Superconducting FETs
operate through continuous tuning of carrier density, but there has not yet
been a bistable superconducting FET, which could serve as a new type of
cryogenic memory element. Recently, unusual ferroelectricity in Bernal-stacked
bilayer graphene aligned to its insulating hexagonal boron nitride (BN) gate
dielectrics was discovered. Here, we report the observation of ferroelectricity
in magic-angle twisted bilayer graphene (MATBG) with aligned BN layers. This
ferroelectric behavior coexists alongside the strongly correlated electron
system of MATBG without disrupting its correlated insulator or superconducting
states. This all-van der Waals platform enables configurable switching between
different electronic states of this rich system. To illustrate this new
approach, we demonstrate reproducible bistable switching between the
superconducting, metallic, and correlated insulator states of MATBG using gate
voltage or electric displacement field. These experiments unlock the potential
to broadly incorporate this new moir\'{e} ferroelectric superconductor into
highly tunable superconducting electronics.
