  In this paper, we propose a high-precision SRAM-based CIM macro that can
perform 4x4-bit MAC operations and yield 9-bit signed output. The inherent
discharge branches of SRAM cells are utilized to apply time-modulated MAC and
9-bit ADC readout operations on two bit-line capacitors. The same principle is
used for both MAC and A-to-D conversion ensuring high linearity and thus
supporting large number of analog MAC accumulations. The memory cell-embedded
ADC eliminates the use of separate ADCs and enhances energy and area
efficiency. Additionally, two signal margin enhancement techniques, namely the
MAC-folding and boosted-clipping schemes, are proposed to further improve the
CIM computation accuracy.
