  The use of stibnite (Sb2S3) as sensitizers in the solid-state sensitized
solar cells received considerable research interest during the transition of
the millennium. However, the use of perovskite diminished the research in the
field and the potential of antimony chalcogenide (Sb2(S,Se)3) was not explored
thoroughly. Although these materials also provide bandgap tuning like
perovskite by varying the composition of S and Se, it is not as popular as
perovskite mainly because of the low efficiency of the solar cells based on it.
In this paper, we present a landscape of the functional role of various device
parameters on the performance of Sb2(S,Se)3 based solar cells. For the purpose,
we first calibrate the optoelectronic model used for the simulation with the
experimental results from the literature. The model is then subjected to
parametric variations to explore the performance metrics for this class of
solar cells. Our results show that despite the belief that open circuit voltage
is independent of contact layers doping in proper band aligned sensitized solar
cells, here we observe otherwise and the open circuit voltage is indeed
dependent on the doping density of the contact layers. Using the detailed
numerical simulation and analytical model we further identify the performance
optimization map of Sb2(S,Se)3 based sensitized solar cells.
