  Recently, it was argued that a ferromagnetic (FM) insulating phase can be
induced by a novel {\it interorbital} hopping mechanism. Here, we study the
stability range of this novel FM phase under modifications in the crystal
fields and electronic correlation strength, constructing a theoretical phase
diagram. A plethora of states is unveiled, including the FM Mott insulator
(MI), a FM orbital-selective Mott phase (OSMP), several anferromagnetic (AFM)
MI phases, an AFM metallic state, and a FM metal as well. Our most interesting
result is that the FM regime, either in MI or OSMP forms, is shown to be stable
in {\it large} portions of the phase diagram, at both intermediate and strong
electronic correlations, respectively. Our results demonstrate via a detailed
example that the recently proposed novel mechanism to stabilize FM insulators
is not fragile but instead robust, and may enlarge substantially the relatively
small family of known FM insulators.
