  It is known that $n$-degenerate Landau levels with the same spin-valley
quantum number can be realized by $n$-layer graphene with rhombohedral stacking
under magnetic field $B$. We find that the wave functions of degenerate Landau
levels are concentrated at the surface layers of the multi-layer graphene if
the dimensionless ratio $\eta = \gamma_1/(v_F\sqrt{2e\hbar B/c}) \approx
9/\sqrt{B[\text{Tesla}]} \gg 1$, where $\gamma_1$ is the interlayer hopping
energy and $v_F$ the Fermi velocity of single-layer graphene. This allows us to
suggest that: 1) filling fraction $\nu=\frac12$ (or $\nu_n = 5\frac12$)
non-Abelian state with Ising anyon can be realized in three-layer graphene for
magnetic field $ B \in [ 2 , 9] $ Tesla; 2) filling fraction $\nu=\frac23$ (or
$\nu_n = 7\frac13$) non-Abelian state with Fibonacci anyon can be realized in
four-layer graphene for magnetic field $ B \in [ 5 , 9] $ Tesla. Here, $\nu$ is
the total filling fraction in the degenerate Landau levels, and $\nu_n$ is the
filling fraction measured from charge neutrality point which determines the
measured Hall conductance. We have assumed the following conditions to obtain
the above results: the exchange effect of Coulomb interaction polarizes the
$SU(4)$ spin-valley quantum number in the degenerate Landau levels and
effective dielectric constant $\epsilon \gtrsim 10$ to reduce the Coulomb
interaction. The high density of states of multi-layer graphene helps to reduce
the Coulomb interaction via screening.
