  New losses mechanism in monolayer graphene nanoresonators caused by
dissipative intravalley currents stipulated by the synthetic electric fields is
considered. These fields are generated by time-dependent gauge fields arising
in graphene membrane due to its intrinsic out-of- plain distortions and the
influence of the external periodic electromotive force. This losses mechanism
accounts for essential part (about 40 percents) of losses in graphene
nanoresonator and is specific just for graphene.
  The ways of the minimization of this kind of dissipation (increase of the
quality factor of the electromechanical system) are discussed. It is explained
why one can increase quality factor by correctly chosen combination of strains
(by strain engineering). Besides, it is shown that quality factor can be
increased by switching on a magnetic field perpendicular to graphene membrane.
