  In this paper, electrical and electronic properties of strained mono-layer
InTe for two structures, $\alpha$, and $\beta$ phases, is investigated. The
band structure is obtained using density functional theory (DFT). The minimum
energy and effective mass of the conduction band and second conduction band for
different strains are calculated. A FET with using InTe as the channel material
is investigated. Voltage-current characteristics of InTe FET is calculated and
I$_{ON}$/I$_{OFF}$ ratio is obtained with respect to biaxial strain.
