  Dynamical mean-field theory is employed to calculate the electronic charge
reconstruction of multilayered inhomogeneous devices composed of semi-infinite
metallic lead layers sandwiching barrier planes of a strongly correlated
material (that can be tuned through the metal-insulator Mott transition). The
main focus is on barriers that are doped Mott insulators, and how the
electronic charge reconstruction can create well-defined Mott insulating
regions in a device whose thickness is governed by intrinsic materials
properties, and hence may be able to be reproducibly made.
