  Electrically detected magnetic resonance (EDMR) and near-zero field
magnetoresistance (NZFMR) are techniques that probe defect states at dielectric
interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such
as the Si/SiO$_2$ MOS field effect transistor (MOSFET). A comprehensive theory,
adapted from the trap-assisted recombination theory of Shockley, Read, and
Hall, is introduced to include the spin-dependent recombination effects that
provide the mechanism for magnetic field sensitivity.
