  We present an elegant and effective technology of extending the photoresponse
of Si towards the IR range. Our approach is based on the use of Ag2S quantum
dots planted on the surface of Si to create impurity states in Si band gap.
Given the variety of available QDs and the ease of extending the photoresponse
of Si towards the IR range, our findings open a path towards the future study
and development of Si detectors for technological applications. The current
research at the interface of physics and chemistry is also of fundamental
importance to the development of Si optoelectronics of the IR range.
