  We use the dynamical mean field method to investigate electronic properties
of heterostructures in which finite number of Mott-insulator layers are
embedded in a spatially infinite band-insulator. The evolution of the
correlation effects with the number of Mott insulating layers and with position
in the heterostructure is determined, and the optical conductivity is computed.
It is shown that the heterostructures are generally metallic, with moderately
renormalized bands of quasiparticles appearing at the interface between the
correlated and uncorrelated regions.
