  We report the fabrication and electrical characterization of a single
electron transistor in a modulation doped silicon/silicon-germanium
heterostructure. The quantum dot is fabricated by electron beam lithography and
subsequent reactive ion etching. The dot potential and electron density are
modified by laterally defined side gates in the plane of the dot. Low
temperature measurements show Coulomb blockade with a single electron charging
energy of 3.2 meV.
