  The integration of high-k dielectrics with two-dimensional (2D)
semiconductors is a critical step towards high-performance nanoelectronics,
which however remains challenging due to high density of interface states and
the damage to the monolayer 2D semiconductors. In this study, we propose a
selective hydrogenation strategy to improve the interface properties while do
not affect the 2D semiconductors. Using the interface of monolayer MoS2 and
silicon nitride as an example, we show substantially improved interface
properties for electronic applications after the interfacial hydrogenation, as
evidenced by reduced inhomogeneous charge redistribution, increased band
offset, and untouched electronic properties of MoS2. Interestingly, this
hydrogenation process selectively occurs only at the silicon nitride surface
and is compatible with the current semiconductor fabrication process. We
further show that this strategy is general and applicable to other interfaces
between high-k dielectrics and 2D semiconductors such as HfO2 on the monolayer
MoS2. Our results demonstrate a simple yet viable way to improve the
interfacial properties for integrating many high-k dielectrics on a broad range
of two-dimensional transition metal disulfide semiconductors.
