  Superconducting diode effects (SDEs) occur in systems with asymmetric
critical supercurrents $|I^c_+|\neq |I^c_-|$ yielding dissipationless flow in
one direction $(e.g., +)$, while dissipative transport in the opposite
direction $(-)$. Here we investigate the SDE in a phase-biased $\phi$ Josephson
junction with a double-barrier resonant-tunneling InAs nanowire nested between
proximitized InAs/Al leads with finite momentum $\hbar q$ Cooper pairing.
Within the Bogoliubov-de Gennes (BdG) approach, we obtain the exact BCS ground
state energy $\mathcal{E}_G(q,\phi)$ and $I^{c}_{+} \neq |I^{c}_{-}|$ from the
current-phase relation $I_G(q,\phi) \sim \partial_{\phi}\mathcal{E}_G(q,\phi)$.
The SDE arises from the accrued Andreev phase shifts $\delta
\phi_{L,R}(q,\phi)$ leading to asymmetric BdG spectra for $q\neq 0$.
Remarkably, the diode efficiency $\gamma=(I^{c}_{+} - |I^{c}_{-}|)/(I^{c}_{+} +
|I^{c}_{-}|)$ shows multiple Fabry-Perot resonances $\gamma \simeq 26\%$ at the
double-barrier Andreev bound states as the well depth $V_g$ is varied. Our
$\gamma$ also features sign reversals for increasing $q$ and high sensitiveness
to fermion-parity transitions. The latter enables $I^{c}_{+}
(\phi_+)\rightleftarrows I^{c}_{-}(\phi_-)$ switchings over narrow phase
windows, i.e., $\phi_+, \phi_- \in \Delta \phi\ll\pi$, possibly relevant for
future superconducting electronics.
