  Future experiments are using silicon detectors in a high radiation
environment and in high magnetic fields. The radiation tolerance of silicon
improves by cooling it to temperatures below 180 K. At low temperatures the
mobility increases, which leads to larger deflections of the charge carriers by
the Lorentz force. A good knowledge of the Lorentz angle is needed for design
and operation of silicon detectors. We present measurements of the Lorentz
angle between 77 K and 300 K before and after irradiation with a primary beam
of 21 MeV protons.
