  Achieving stable, high-quality quantum dots has proven challenging within
device architectures rooted in conventional solid-state device fabrication
paradigms. In fact, these are grappled with complex protocols in order to
balance ease of realization, scalability, and quantum transport properties.
Here, we demonstrate a novel paradigm of semiconductor quantum dot engineering
by exploiting ion gating. Our approach is found to enable the realization and
control of a novel quantum dot system: the iontronic quantum dot. Clear Coulomb
blockade peaks and their dependence on an externally applied magnetic field are
reported, together with the impact of device architecture and confinement
potential on quantum dot quality. Devices incorporating two identical quantum
dots in series are realized, addressing the reproducibility of the developed
approach. The iontronic quantum dot represents a novel class of
zero-dimensional quantum devices engineered to overcome the need for thin
dielectric layers, facilitating single-step device fabrication. Overall, the
reported approach holds the potential to revolutionize the development of
functional quantum materials and devices, driving rapid progress in solid state
quantum technologies
