  We have observed that the shot noise of tunnel current, I, in
GaSb-AlSb-InAs-AlSb-GaSb double-barrier structure under a magnetic field can
exceed 2qI. The measurements were done at T=4K in fields up to 5T parallel to
the current. The noise enhancement occurred at each of the several
negative-differential conductance regions induced by the tunneling of holes
through Landau levels in the InAs quantum well. The amount of the enhancement
increased with the strength of the negative conductance and reached values up
to 8qI. These results are explained qualitatively by fluctuations of the
density of states in the well, but point out the need for a detailed theory of
shot noise enhancement in resonant tunneling devices.
