  Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons
channeling in silicon single crystals at circular bent (111) planes. The aim
was to identify critical experimental parameters which effect the
volume-deflection and volume-capture characteristics. To these belongs the
angular alignment of the crystal with respect to the nominal beam direction.
The continuum potential picture has been utilized. The simulation results were
compared with experiments. It turns out that the assumption of an anticlastic
bending of the crystal, bent on the principle of the quasi-mosaic effect, is
not required to reproduce the experimental observations.
