  The authors report surface-acoustic-wave-driven luminescence from a lateral
p-n junction formed by molecular beam epitaxy regrowth of a modulation doped
GaAs/AlGaAs quantum well on a patterned GaAs substrate.
Surface-acoustic-wave-driven transport is demonstrated by peaks in the
electrical current and light emission from the GaAs quantum well at the
resonant frequency of the transducer. This type of junction offers high carrier
mobility and scalability. The demonstration of surface-acoustic-wave
luminescence is a significant step towards single-photon applications in
quantum computation and quantum cryptography.
