  SnS2 stands out as a highly promising two-dimensional material with
significant potential for applications in the field of electronics. Numerous
attempts have been undertaken to modulate the physical properties of SnS2 by
doping with various metal ions. Here, we deposited a series of Sb-doped SnS2
via atomic layer deposition (ALD) super-cycle process and compared its
crystallinity, composition, and optical properties to those of pristine SnS2.
We found that the increase in the concentration of Sb is accompanied by a
gradual reduction in the Sn and S binding energies. The work function is
increased upon Sb doping from 4.32 eV (SnS2) to 4.75 eV (Sb-doped SnS2 with 9:1
ratio). When integrated into photodetectors, the Sb-doped SnS2 showed improved
performances, demonstrating increased peak photoresponsivity values from 19.5
A/W to 27.8 A/W at 405 nm, accompanied by an improvement in response speed.
These results offer valuable insights into next-generation optoelectronic
applications based on SnS2.
