  Spin injection and detection in silicon is a difficult problem, in part
because the weak spin-orbit coupling and indirect gap preclude using standard
optical techniques. We propose two ways to overcome this difficulty, and
illustrate their operation by developing a model for spin-polarized transport
across a heterojunction. We find that equilibrium spin polarization of holes
leads to a strong modification of the spin and charge dynamics of electrons,
and we show how the symmetry properties of the charge current can be exploited
to detect spin injection in silicon using currently available techniques.
