  We present a new fabrication method for epitaxial graphene on SiC which
enables the growth of ultra-smooth defect- and bilayer-free graphene sheets
with an unprecedented reproducibility, a necessary prerequisite for wafer-scale
fabrication of high quality graphene-based electronic devices. The inherent but
unfavorable formation of high SiC surface terrace steps during high temperature
sublimation growth is suppressed by rapid formation of the graphene buffer
layer which stabilizes the SiC surface. The enhanced nucleation is enforced by
decomposition of polymer adsorbates which act as a carbon source. With most of
the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions
is formed with lateral dimensions only limited by the size of the substrate.
This makes the polymer assisted sublimation growth technique the most promising
method for commercial wafer scale epitaxial graphene fabrication. The
extraordinary electronic quality is evidenced by quantum resistance metrology
at 4.2 K with until now unreached precision and high electron mobilities on mm
scale devices.
