  Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots
(QDs) are promising platforms for large-scale quantum computers. To control
spin qubits in QDs, electric dipole spin resonance (EDSR) has been most
commonly used in recent years. By delocalizing an electron across a double
quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs.
Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman
single-shot readout. When changing the detuning with a fixed drive power, we
achieve s-shape spin resonance frequencies, an order of magnitude improvement
in the spin Rabi frequencies, and virtually constant spin dephasing times. Our
results offer a route to large-scale spin qubit systems with higher control
fidelity in Si-MOS QDs.
