  Abstract: Solid state sensors having timing capabilities are becoming an
absolute need in particle tracking techniques of future experiments at
colliders. In this sense, silicon sensors having 3D structure are becoming an
interesting solution, due to their intrinsic speed and radiation resistance. A
characteristic of such devices is the strict dependence of their performance on
their geometric structure, which can be widely optimised by design, thus
requiring suitable tools for an accurate modeling of their behaviour. This
paper illustrates the development, performance and use of the TCoDe simulator,
specifically dedicated to the fast simulation of carrier transportation
phenomena in solid state sensors. Some examples of its effectiveness in the
design and analysis of 3D sensors is also given.
