  In this paper, a study is presented on the charge transport in n-type doped
semiconductor 6H-SiC (in both transient and steady state) using a
nonequilibrium quantum kinetic theory derived from the method of nonequilibrium
statistical operator (NSO), which furnishes a clear description of the
irreversible phenomena that occur in the evolution of the analyzed system. We
obtain theoretically the dependence on the electric field (applied in the
orientation perpendicular or parallel to the c-axis) of the basic
macrovariables: the electron drift velocity and the nonequilibrium temperature.
The peak points in time evolution of this macrovariables are derived and
analyzed.
