  We record fine oscillations of 20 to 60 mT superimposed on larger
oscillations having periodicity ~ 2 T at temperatures up to 100 K and fields up
to 10 T from silicon nanowires. Having confirmed that these features appear
from the edge states associated with skipping orbits at nanowire edges and
confined pure orbits in the interior of the nanowires we derive electron
effective mass of 0.001 me to 0.006 me, carrier lifetime in the range 3 to 19
fs and carrier density that varies from 2x10^11 cm^-2 to 9x10^12 cm^-2.
However, at low temperature the observed oscillation amplitude invariant of the
field is attributed to not only a strong size confinement and the pinning of
orbits by impurities but also Aharanov Bohm (AB) oscillations due to
edge-states that propagate quasi-ballistically through the nanowire. The
overall oscillation on a linear positive magnetoresistance background can be
attributed to temperature-dependent crossover of Shubnikov de Haas oscillations
(SdHO) and AB oscillations in silicon nanowires.
