  We addressed the carrier dynamics in so-called G-centers in silicon
(consisting of substitutional-interstitial carbon pairs interacting with
interstitial silicons) obtained via ion implantation into a
silicon-on-insulator wafer. For this point defect in silicon emitting in the
telecommunication wavelength range, we unravel the recombination dynamics by
time-resolved photoluminescence spectroscopy. More specifically, we performed
detailed photoluminescence experiments as a function of excitation energy,
incident power, irradiation fluence and temperature in order to study the
impact of radiative and non-radiative recombination channels on the spectrum,
yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280
nm) and the broad asymmetric sideband developing at lower energy share the same
recombination dynamics as shown by time-resolved experiments performed
selectively on each spectral component. This feature accounts for the common
origin of the two emission bands which are unambiguously attributed to the
zero-phonon line and to the corresponding phonon sideband. In the framework of
the Huang-Rhys theory with non-perturbative calculations, we reach an
estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the
electronic wave function in the G-center. The radiative recombination time
measured at low temperature lies in the 6 ns-range. The estimation of both
radiative and non-radiative recombination rates as a function of temperature
further demonstrate a constant radiative lifetime. Finally, although G-centers
are shallow levels in silicon, we find a value of the Debye-Waller factor
comparable to deep levels in wide-bandgap materials. Our results point out the
potential of G-centers as a solid-state light source to be integrated into
opto-electronic devices within a common silicon platform.
