  In future experiments the readout electronics for pixel detectors is required
to be resistant to a very high radiation level. In this paper we report on
irradiation tests performed on several preFPIX2 prototype pixel readout chips
for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips
have been implemented in commercial 0.25 um CMOS processes following radiation
tolerant design rules. The results show that this ASIC design tolerates a large
total radiation dose, and that radiation induced Single Event Effects occur at
a manageable level.
