  We present a detailed study of the exchange-correlation hole and
exchange-correlation energy per particle in the Si crystal as calculated by the
Variational Monte Carlo method and predicted by various density functional
models. Nonlocal density averaging methods prove to be successful in correcting
severe errors in the local density approximation (LDA) at low densities where
the density changes dramatically over the correlation length of the LDA hole,
but fail to provide systematic improvements at higher densities where the
effects of density inhomogeneity are more subtle. Exchange and correlation
considered separately show a sensitivity to the nonlocal semiconductor crystal
environment, particularly within the Si bond, which is not predicted by the
nonlocal approaches based on density averaging. The exchange hole is well
described by a bonding orbital picture, while the correlation hole has a
significant component due to the polarization of the nearby bonds, which
partially screens out the anisotropy in the exchange hole.
