  We report fabrication and characteristics of an organic monolayer based Metal
Oxide Semiconductor (MOS) device. In place of SiO2 oxide layer in the MOS
configuration, we used 1H, 1H, 2H, 2H- perfluorooctyl trichlorosilane (FOTS)
self-assembled monolayer as a substitution. The MOS device was fabricated by
simple steps like sputter deposition and dip coating method. The device was
heat treated to different temperatures to understand its performance and
efficiency for high temperature application. The MOS device was heated to
150{\deg} C, 350{\deg}C and 550{\deg}C and the energy band gap was found to be
varied in the order 2.5 eV, 3.0 eV and 3.4eV respectively. For non-heated
sample, the energy band gap is 3.4 eV. The results shows that the parameters
like charge mobility ({\mu}), energy band gap, and resistance were found to be
decreased after the heat treatment. The change in the energy band gap due to
heat treatment has significantly influenced the I-V and the impedance
characteristics. We observed that the MOS device started to conduct between 1V
to 3V, further the device conduct till 20V. Impedance analysis show that device
heated to 350 {\deg}C shows the low impedance but the impedance starts to
increase for further heating up to 550{\deg}C. Using Multi Dielectric Energy
Band Diagram Program (MEBDP) we studied the MOS structure and C-V
characteristics and temperature dependent behavior of the devices from 100K to
600K. Our experimental work and simulation studies confirm that the FOTS SAM
substituted MOS device could be used for high temperature applications. The
experimental observations are well supported by the simulation results. This
study shows that the FOTS organic monolayer are promising substitute for SiO2
oxide layer in the MOS and MOSFET which could be used high temperature
applications.
