  The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the
potentiality to allow achieving high efficiency solar cells through the tuning
of its band gap by changing the Indium composition. It also counts among its
advantages a relatively low effective mass, high carriers\^a mobility, a high
absorption coefficient along with good radiation tolerance.However, the main
drawback of InGaN is linked to its p-type doping, which is difficult to grow in
good quality and on which ohmic contacts are difficult to realize. The Schottky
solar cell is a good alternative to avoid the p-type doping of InGaN. In this
report, a comprehensive numerical simulation, using mathematically rigorous
optimization approach based on state-of-the-art optimization algorithms, is
used to find the optimum geometrical and physical parameters that yield the
best efficiency of a Schottky solar cell within the achievable device
fabrication range. A 18.2% efficiency is predicted for this new InGaN solar
cell design.
