  We propose a scheme to manipulate the spin relaxation in vertically coupled
semiconductor double quantum dots. Up to {\em twelve} orders of magnitude
variation of the spin relaxation time can be achieved by a small gate voltage
applied vertically on the double dot. Different effects such as the dot size,
barrier height, inter-dot distance, and magnetic field on the spin relaxation
are investigated in detail. The condition to achieve a large variation is
discussed.
