  The electron fluid model in plasmonic field effect transistor (FET) operation
is related to the behavior of a radio-frequency (RF) cavity. This new
understanding led to finding the relationships between physical device
parameters and equivalent circuit components in traditional parallel resistor,
inductor, and capacitor (RLC) and transmission models for cavity structures.
Verification of these models is performed using PSpice to simulate the
frequency dependent voltage output and compare with analytical equations for
the drain potential as a function of frequency.
