  InGaN light-emitting diodes (LEDs) are more efficient and cost effective than
incandescent and fluorescent lighting, but lattice mismatch limits the
thickness of InGaN layers that can be grown on GaN without
performance-degrading dislocations. In this work, we apply hybrid density
functional theory calculations to investigate the thermodynamic stability,
lattice parameters, and band gaps of wurtzite and zincblende quaternary BInGaN
alloys. We find that the wurtzite phase is more stable and can be
lattice-matched to GaN for BInGaN compositions containing up to ~30% boron. The
lattice match with GaN decreases strain and enables thicker active layers that
mitigate Auger recombination and increase the efficiency of the LEDs. The band
gap of the alloy remains tunable throughout the visible spectrum. Our results
indicate that BInGaN alloys are promising alternatives to InGaN for
high-efficiency, high-power LEDs.
