  Nanoscale semiconductor materials have been extensively investigated as the
channel materials of transistors for energy-efficient low-power logic switches
to enable scaling to smaller dimensions. On the opposite end of transistor
applications is power electronics for which transistors capable of switching
very high voltages are necessary. Miniaturization of energy-efficient power
switches can enable the integration with various electronic systems and lead to
substantial boosts in energy efficiency. Nanotechnology is yet to have an
impact in this arena. In this work, it is demonstrated that nanomembranes of
the wide-bandgap semiconductor gallium oxide can be used as channels of
transistors capable of switching high voltages, and at the same time can be
integrated on any platform. The findings mark a step towards using lessons
learnt in nanomaterials and nanotechnology to address a challenge that yet
remains untouched by the field.
