  The low-frequency noise (LF-noise) of deep submicron MOSFETs is
experimentally studied with special emphasis on yield relevant parameter
scattering. A novel modeling approach is developed which includes detailed
consideration of statistical effects. The model is based on device
physics-based parameters which cause statistical fluctuations in LF-noise
behavior of individual devices. It can easily be implemented in a compact model
for use in circuit simulation tools.
