  A novel method for fast fabrication of mesoscopic multilayered graphene
electronic devices utilizing nanoprobes to exfoliate graphite flakes is
developed. The magnetoresistance of these devices exhibit pronounced
Shubnikov-de Haas oscillations at magnetic fields above 4 T and at temperatures
below 30 K. From the analysis of the SdH oscillations we show that multilayer
graphene devices have a carrier density and effective mass (m*= 0.042me -
0.083me) comparable to those of bilayer and trilayer graphene. The quantum
lifetime in this multilayered graphene is in the range 22 to 90 fs
corresponding to a disorder-broadening of 5 to 15 meV.
