  We demonstrate experimentally the electrical ballistic electron spin
injection from a ferromagnetic metal / tunnel barrier contact into a
semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect
technique for reliable optical measurement of the degree of injected spin
polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed
injected spin polarization in excess of 8 % at 80K.
