  Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense
structures with aggressive gate pitch. Such a density is necessary to
separately control the QDs chemical potential (i.e. charge occupation of each
QD) from the exchange interaction (i.e. tunnel barriers between each QD). We
present here a novel Si quantum device integration that halves the effective
gate pitch and provides full controllability in 1D FDSOI QD arrays. The major
advantages of this architecture are explored through numerical simulations.
Functionality of the fabricated structure is validated via 300K statistical
electrical characterization, while tunnel-coupling control is demonstrated at
cryogenic temperature.
