  Carrier relaxation processes have been investigated in GaAs/AlGaAs v-groove
quantum wires (QWRs) with a large subband separation (46 meV). Signatures of
inhibited carrier relaxation mechanisms are seen in temperature-dependent
photoluminescence (PL) and photoluminescence-excitation (PLE) measurements; we
observe strong emission from the first excited state of the QWR below ~50 K.
This is attributed to reduced inter-subband relaxation via phonon scattering
between localized states. Theoretical calculations and experimental results
indicate that the pinch-off regions, which provide additional two-dimensional
confinement for the QWR structure, have a blocking effect on relaxation
mechanisms for certain structures within the v-groove. Time-resolved PL
measurements show that efficient carrier relaxation from excited QWR states
into the ground state, occurs only at temperatures > 30 K. Values for the low
temperature radiative lifetimes of the ground- and first excited-state excitons
have been obtained (340 ps and 160 ps respectively), and their corresponding
localization lengths along the wire estimated.
