  We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by
adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The
adsorption-controlled growth was monitored using line-of-sight quadrupole mass
spectrometry. In a thermodynamics of MBE (TOMBE) diagram, the experimental
growth window was found to be significantly narrower than the predicted one. We
found the critical thickness for strain relaxation of the LaInO3 layer (lattice
mismatch $\approx$ -4$\%$) to be of 1 nm using in-situ RHEED analysis.
Substrate and film possess an orthorhombic crystal structure which can be
approximated by a pseudo-cubic lattice. X-ray-diffraction (XRD) analysis
revealed the pseudo-cube-on-pseudo-cube epitaxial relationship ofthe LaInO3
films to the DyScO3 substrates. This relation was confirmed by transmission
electron microscopy (TEM), which further resolved the presence of rotational
orthorhombic domains - the majority of which have coinciding c-axis with that
of the substrate. Raman spectroscopy further confirmed the presence of a LaInO3
layer. Our findings open up the possibility for 2-dimensional electron gases at
the MBE-grown heterointerface with BaSnO3.
