  Antiferromagnets (AFs) attract much attention due to potential applications
in spintronics. Both the electric current and the electric field are considered
as tools suitable to control properties and the N\'eel vector direction of AFs.
Among AFs, CuMnAs has been shown to exhibit specific properties that result in
the existence of the current-induced spin-orbit torques commensurate with spin
directions and topological Dirac quasiparticles. Here, we report on the
observation of a reversible effect of an electric field on the resistivity of
CuMnAs thin films, employing ionic liquid as a gate insulator. The data allow
to determine the carrier type, concentration, and mobility independently of the
Hall effect that may be affected by an anomalous component.
