  While the electrical current manipulation of antiferromagnets (AFMs) has been
demonstrated, the extent of the studied AFM materials has been limited with few
systematic experiments and a poor understanding. We compare the electrical
current switching of the exchange-bias field ($H_{ex}$) in
AFM-Mn$_3A$N/ferromagnet-Co$_3$FeN bilayers. An applied pulse current can
manipulate $H_{ex}$ with respect to the current density and FM layer
magnetization, which shifts exponentially as a function of the current density.
We found that the saturation current density and exponential decay constant
$\tau$ increase with the local moment of AFM Mn atoms. Our results highlight
the effect of the AFM local moment to electrical current switching of $H_{ex}$,
although it has a near-zero net magnetization, and may provide a facile way to
explore the electrical current manipulation of AFM materials.
