  We show that effective electrical control of the magnetic properties in the
ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a
piezoelectric actuator even in the limit of high doping levels and high Curie
temperatures, where direct electric gating is not possible. We demonstrate very
large and reversible rotations of the magnetic easy axis. We compare the
results obtained from magneto-transport and SQUID magnetometry measurements,
extracting the dependence of the piezo-induced uniaxial magnetic anisotropy
constant upon strain in both cases and detailing the limitations encountered in
the latter approach.
