  In this study, we report the epitaxial growth of a series of {\alpha}-Sn
films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying
from 10 nm to 400 nm. High qualities of the {\alpha}-Sn films are confirmed. An
enhanced large magnetoresistance (MR) over 450,000% has been observed compared
to that of the bare InSb substrate. Thickness, angle and temperature dependent
MR are used to demonstrate the effects of {\alpha}-Sn films on the electrical
transport properties.
