  Characteristic features of transverse transport along the $a^*$ axis in the
NbSe$_3$ charge-density-wave conductor are studied. At low temperatures, the
$I$-$V$ characteristics of both layered structures and NbSe$_3$-NbSe$_3$ point
contacts exhibit a strong peak of dynamic conductivity at zero bias voltage. In
addition, the $I$-$V$ characteristics of layered structures exhibit a series of
peaks that occur at voltages equal to multiples of the double Peierls gap. The
conductivity behavior observed in the experiment resembles that reported for
the interlayer tunneling in Bi-2212 high-$T_c$ superconductors. The
conductivity peak at zero bias is explained using the model of almost coherent
interlayer tunneling of the charge carriers that are not condensed in the
charge density wave.
