  Quasi van der Waals Epitaxy (qvdWE) has been realized for decades at the
interfaces between 3D and 2D materials or van der Waals materials. The growth
of magnetic topological insulators (MTI) Cr: (BixSb1-x)2Te3 (CBST) on GaAs
(111) substrates for Quantum Anomalous Hall Effect (QAH) is actually one of the
examples of qvdWE, which is not well noticed despite the fact that its
advantages have been used in growth of various MTI materials. This is
distinguished from the growth of MTIs on other substrates. Although the qvdWE
mode has been used in many 2D growth on III-V substrates, the specific features
and mechanisms are not well demonstrated and summarized yet. Here in this work,
we have for the first time shown the features of both coherent interfaces and
the existence of strain originating from qvdWE at the same time.
