  We study in-plane magnetic tunnel junctions with additional perpendicular
polarizer for subnanosecond-current-induced switching memories. The
spin-transfer-torque switching dynamics was studied as a function of the cell
aspect ratio both experimentally and by numerical simulations using the
macrospin model. We show that the anisotropy field plays a significant role in
the dynamics, along with the relative amplitude of the two spin-torque
contributions. This was confirmed by micromagnetic simulations. Real-time
measurements of the reversal were performed with samples of low and high aspect
ratio. For low aspect ratios, a precessional motion of the magnetization was
observed and the effect of temperature on the precession coherence was studied.
For high aspect ratios, we observed magnetization reversals in less than 1 ns
for high enough current densities, the final state being controlled by the
current direction in the magnetic tunnel junction cell.
