  The source of spin-wave resonance (SWR) in thin films of the ferromagnetic
semiconductor (Ga,Mn)As is still under debate: does SWR stem from the
\emph{surface} anisotropy (in which case the surface inhomogeneity (SI) model
would apply), or does it originate in the \emph{bulk} inhomogeneity of the
magnetic structure of the sample (and thus requires the use of the volume
inhomogeneity (VI) model)? This paper outlines the ground on which the
controversy arose and shows why in different conditions a resonance sample may
meet the assumptions of either the SI or the VI model. In our considerations we
refer to the SWR spectra measured by Furdyna's team [X. Liu \textit{et al.},
Physical Review B \textbf{75}, 195220 (2007)] in (Ga,Mn)As thin films in
different configurations of the static magnetic field $\vec{H}$ with respect to
the surface. We demonstrate that the observed configuration dependence of the
SWR spectrum of the studied material can be described with the use of the
surface pinning parameter.
