  We demonstrate control by applied electric field of the charge states in
single self-assembled InP quantum dots placed in GaInP Schottky structures
grown by metalorganic vapor phase epitaxy. This has been enabled by growth
optimization leading to suppression of formation of large dots uncontrollably
accumulating charge. Using bias- and polarization-dependent
micro-photoluminescence, we identify the exciton multi-particle states and
carry out a systematic study of the neutral exciton state dipole moment and
polarizability. This analysis allows for the characterization of the exciton
wavefunction properties at the single dot level for this type of quantum dots.
Photocurrent measurements allow further characterization of exciton properties
by electrical means, opening new possibilities for resonant excitation studies
for such system.
