  A versatile Graphene Epitaxy (GrapE) furnace has been designed and fabricated
for the growth of epitaxial graphene (EG) on silicon carbide (SiC) under
diverse growth environments ranging from high vacuum to atmospheric argon
pressure. Radio-frequency (RF) induction enables heating capabilities up to
2000{\deg}C, with controlled heating ramp rates achievable up to 200{\deg}C/s.
Details of critical design aspects and temperature characteristics of the GrapE
system are discussed. The GrapE system, being automated, has enabled the growth
of high-quality EG monolayers and turbostratic EG on SiC using diverse
methodologies such as close confinement sublimation (CCS), open configuration,
polymer-assisted CCS, and rapid thermal annealing. This showcases the
versatility of the GrapE system in EG growth. Comprehensive characterizations
involving atomic force microscopy, Raman spectroscopy, and low-energy electron
diffraction techniques were employed to validate the quality of the produced
EG.
