  Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2,
1:1) have garnered recent interest owing to the presence of both topological
band crossings and flat bands arising from the geometry of the metal-site
kagome lattice. To exploit these electronic features for potential applications
in spintronics, the growth of high quality heterostructures is required. Here
we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates
using molecular beam epitaxy to realize heterointerfaces between elemental
ferromagnetic metals and antiferromagnetic kagome metals. Structural
characterization using high-resolution X-ray diffraction, reflection
high-energy electron diffraction, and electron microscopy reveals the FeSn
films are flat and epitaxial. Rutherford backscattering spectroscopy was used
to confirm the stoichiometric window where the FeSn phase is stabilized, while
transport and magnetometry measurements were conducted to verify metallicity
and magnetic ordering in the films. Exchange bias was observed, confirming the
presence of antiferromagnetic order in the FeSn layers, paving the way for
future studies of magnetism in kagome heterostructures and potential
integration of these materials into devices.
