  We report charge sensing measurements of a silicon metal-oxide-semiconductor
quantum dot using a single-electron transistor as a charge sensor with dynamic
feedback control. Using digitallycontrolled feedback, the sensor exhibits
sensitive and robust detection of the charge state of the quantum dot, even in
the presence of charge drifts and random charge rearrangements. The sensor
enables the occupancy of the quantum dot to be probed down to the single
electron level.
