  We investigate the Goos-H\"anchen shift for ballistic electrons (i) reflected
from a step-like inhomogeneity of the potential energy and (or) effective mass,
and (ii) transmitted through a ferromagnetic barrier region in monolayer
silicene or gapped graphene. For the electrons reflected from a single
interface we found that the Goos-H\"anchen shift is valley-polarized for gapped
graphene structure, and valley- and spin-polarized for silicene due to the
spin-valley coupling. Incontrast, for example, to gapless graphene the lateral
beam shift in gapped structures occurs not only in the case of total, but also
of partial, reflection, i.e. at the angles smaller than the critical angle of
total reflection. We have also demonstrated that the valley- and spin-polarized
displacement of the electron beam, transmitted through a ferromagnetic silicene
barrier, resonantly depends on the barrier width. The resonant values of the
displacement can be controlled by adjusting the electric potential, the
external perpendicular electric field, and the exchange field induced by an
insulating ferromagnetic substrate.
