  GaN/InGaN microLEDs are a very promising technology for next generation
displays. Switching control transistors and their integration are key
components in achieving high-performance, efficient displays. Monolithic
integration of microLEDs with GaN switching devices provides an opportunity to
control microLED output power with capacitive (voltage) control rather than
current controlled schemes. This approach can greatly reduce system complexity
for the driver circuit arrays while maintaining device opto-electronic
performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting
transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN
n-channel FET. The integrated device exhibits excellent gate control, drain
current control and optical emission control. This work provides a promising
pathway for future monolithic integration of GaN FETs with microLED to enable
fast switching high efficiency microLED display and communication systems.
