  Chemical vapor deposition (CVD) has been proposed for large-scale graphene
synthesis for practical applications. However, the inferior electronic
properties of CVD graphene are one of the key problems to be solved. In this
study, we present a detailed study on the electronic properties of high-quality
single crystal monolayer graphene. The graphene is grown by CVD on copper using
a cold-wall reactor and then transferred to Si/SiO2. Our low-temperature
magneto-transport data demonstrate that the characteristics of the measured
single-crystal CVD graphene samples are superior to those of polycrystalline
graphene and have a quality which is comparable to that of exfoliated graphene
on Si/SiO2. The Dirac point in our best samples is located at back-gate
voltages of less than 10V, and their mobility can reach 11000 cm2/Vs. More than
12 flat and discernible half-integer quantum Hall plateaus have been observed
in high magnetic field on both the electron and hole side of the Dirac point.
At low magnetic field, the magnetoresistance shows a clear weak localization
peak. Using the theory of McCann et al., we find that the inelastic scattering
length is larger than 1 {\mu}m in these samples even at the charge neutrality
point.
