  We observe very small gate-voltage shifts in the transfer characteristic of
as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer
is changed. This observation is in strong contrast to Si-based ion-sensitive
FETs. The low gate-shift of a GFET can be further reduced if the graphene
surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide
layer is applied instead, the opposite happens. This suggests that clean
graphene does not sense the chemical potential of protons. A GFET can therefore
be used as a reference electrode in an aqueous electrolyte. Our finding sheds
light on the large variety of pH-induced gate shifts that have been published
for GFETs in the recent literature.
