  In this work we study numerically the effects of the angle of deposition of
particles in the growth process of a thin-film generated by aggregation of
particles added at random. The particles are aggregated in a random position of
an initially flat surface and with a given angle distribution. This process
gives rise to a rough interface after some time of deposition. We performed
Monte Carlo simulations and, by changing the angle of deposition, we observed a
transition from the random deposition (RD) universality class to the
Kardar-Parisi-Zhang (KPZ) universality class. We measured the usual scaling
exponents, namely, the roughness ($\alpha$), the growth ($\beta$) and the
dynamic ($z$) exponents. Our results show that the particles added
non-perpendicularly to the substrate, can change the universality class in a
discrete atomistic random deposition model. When particles are deposited with
an angle of $45^{\circ}$ in relation to the surface, the same values of the
Ballistic Deposition model are observed in the Random Deposition model. We also
propose an analytic approach, using a differential stochastic equation to
analyze the growth process evolution, and our theoretical results corroborate
the computer simulations.
