  We have studied the effects of optical-frequency light on proximitized
InAs/Al Josephson junctions based on highly n-doped InAs nanowires at varying
incident photon flux and at three different photon wavelengths. The
experimentally obtained IV curves were modeled using a shunted junction model
which takes scattering at the contact interfaces into account. The Josephson
junctions were found to be surprisingly robust, interacting with the incident
radiation only through heating, whereas above the critical current our devices
showed non-thermal effects resulting from photon exposure. Our work provides
important guidelines for the co-integration of Josephson junctions alongside
quantum photonic circuits and lays the foundation for future work on
nanowire-based hybrid photon detectors.
