  We have investigated properties of superconducting titanium nitride (TiN)
films that were sputtered over a large range of RF-induced DC bias voltage
applied to the substrate. Films grown with the largest bias voltages contained
cubic TiN phases with a large fraction of the (200) crystalline growth
orientation. These films also contained the smallest concentrations of oxygen
impurities, resulting in stoichiometric TiN. Over the range of bias, variations
of the stress from slightly tensile to highly compressive were measured and
correlated to crystallinity of the (200) growth. The films exhibited highly
uniform thickness and resistivity, and show the potential for yielding
reproducible low-temperature devices. Finally, coplanar resonators fabricated
with the films exhibited high kinetic inductance and quality factor, where the
latter was obtained in part from temperature-dependent frequency shifts.
