  The outstanding properties of graphene have laid the foundation for exploring
graphene-like two-dimensional systems, commonly referred to as 2D-Xenes.
Amongst them, silicene is a front-runner owing to its compatibility with
current silicon fabrication technologies. Recent works on silicene have
unveiled its useful electronic and mechanical properties. The rapid
miniaturization of silicon devices and the useful electro-mechanical properties
of silicene necessitates the exploration for potential applications of silicene
flexible electronics in the nano electro-mechanical systems. Using a
theoretical model derived from the integration of \textit{ab-initio}
density-functional theory and quantum transport theory, we investigate the
piezoresistance effect of silicene in the nanoscale regime. Like graphene, we
obtain a small value of piezoresistance gauge factor of silicene, which is
sinusoidally dependent on the transport angle. The small gauge factor of
silicene is attributed to its robust Dirac cone and strain-independent valley
degeneracy. Based on the obtained results, we propose to use silicene as an
interconnect in flexible electronic devices and a reference piezoresistor in
strain sensors. This work will hence pave the way for exploring flexible
electronics applications in other 2D-Xene materials.
