  The predicted formation of moire superlattices leading to confined excitonic
states in heterostructures formed by stacking two lattice mismatched transition
metal dichalcogenide (TMD) monolayers was recently experimentally confirmed.
Such periodic potential in TMD heterostructure functions as a diffusion barrier
that affects the energy transport and dynamics of interlayer excitons (electron
and hole spatially concentrated in different monolayers). Understanding the
transport of excitons under such condition is essential to establish the
material system as a next generation device platform. In this work, we
experimentally quantify the diffusion barrier experienced by the interlayer
excitons in a hexagonal boron nitride (hBN) encapsulated, molybdenum diselenide
tungsten/diselenide (MoSe2/WSe2) heterostructure by studying the exciton
transport at various temperatures.
