  Two-dimensional ferroelectric monolayers are promising candidates for compact
memory devices and flexible electronics. Here, through first-principles
calculations, we predict room temperature ferroelectricity in AB-type
monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb)
elements. We show that their spontaneous polarization, oriented out-of-plane,
ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We
demonstrate electric field tunable Berry curvature dipole and nonlinear Hall
current in these monolayers. Additionally, we highlight their applicability in
next-generation memory devices by forming efficient ferroelectric tunnel
junctions, especially in InP, which supports high tunneling electroresistance.
Our findings motivate further exploration of these monolayers for studying the
interplay between Berry curvature and ferroelectricity and for integrating
these ferroelectric monolayers in next-generation electronic devices.
