  For the first time, thousands of RF MOSFETs were batch-fabricated on
liquid-exfoliated MoS2 below 300 {\deg}C with nearly 100% yield. The
large-scale fabrication with high yield allowed the average performance instead
of the best performance to be reported. The DC performance of these devices
were typical, but the RF performance, enabled by buried gates and on the order
of 100 MHz, was reported for the first time for liquid-exfoliated MoS2. To
resolve the dilemma of thin vs. thick films, gate recess was used on 20-nm
thick films to improve the gate control while keeping the contact resistance
lower than that on 10-nm films. These innovations may enable thin-film
transistors to operate in the microwave range.
