  We demonstrate a series of InGaN/GaN double quantum well nanostructure
elements. We grow a layer of 2 {\mu}m undoped GaN template on top of a
(0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited on
top as a masking pattern layer. This layer is then covered with a 300 nm
aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After
oxalic acid etching, we transfer the hole pattern from the AAO layer to the
SiO2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical
vapor deposition to grow GaN nanorods approximately 1.5 {\mu}m in size. We then
grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the
GaN nanorod substrate under different temperatures. We then study the
characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces
of GaN nanorods. We report the following findings from our study: first, using
SiO2 with repeating hole pattern, we are able to grow high-quality GaN nanorods
with diameters of approximately 80-120 nm; second, photoluminescence (PL)
measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum
wells on the semi-polar face. We calculate the quantum wells' cavity thickness
with obtained PL measurements. Lastly, high resolution TEM images allow us to
study the lattice structure characteristics of InGaN/GaN quantum wells on GaN
nanorod and identify the existence of threading dislocations in the lattice
structure that affects the GaN nanorod's growth mechanism.
