  Carbon nanotube field-effect transistors with sub 20 nm long channels and
on/off current ratios of > 1000000 are demonstrated. Individual single-walled
carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from
structured catalytic islands using chemical vapor deposition at 700 degree
Celsius form the channels. Electron beam lithography and a combination of HSQ,
calix[6]arene and PMMA e-beam resists were used to structure the short channels
and source and drain regions. The nanotube transistors display on-currents in
excess of 15 microA for drain-source biases of only 0.4 Volt.
