  The search for new large band gap quantum spin Hall (QSH) and quantum
anomalous Hall (QAH) insulators is critical for their realistic applications at
room temperature. Here we predict, based on first principles calculations, that
the band gap of QSH and QAH states can be as large as 1.01 eV and 0.35 eV in an
H-decorated Bi(111) film. The origin of this giant band gap lies both in the
large spin-orbit interaction of Bi and the H-mediated exceptional electronic
and structural properties. Moreover, we find that the QAH state also possesses
the properties of quantum valley Hall state, thus intrinsically realising the
so-called valley-polarized QAH effect. We further investigate the realization
of large gap QSH and QAH states in an H-decorated Bi(\={1}10) film and
X-decorated (X=F, Cl, Br, and I) Bi(111) films.
