  We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers
in commercially available, heteroepitaxial, wafer-sized, mm thick,
single-crystal diamond. We observe single, native NV centers with a density of
roughly 1 NV per $\mu m^3$ and moderate coherence time ($T_2 = 5 \mu s$)
embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV
zero phonon line fine structure witnesses high crystalline quality of the
diamond especially close to the growth surface, consistent with a reduced
dislocation density. Using ion implantation and plasma etching, we verify the
possibility to fabricate nanostructures with shallow color centers rendering
our diamond material promising for fabrication of nanoscale sensing devices. As
this diamond is available in wafer-sizes up to $100 mm$ it offers the
opportunity to up-scale diamond-based device fabrication.
