  In this work, the implications of high field bias conditions in
radiation-induced defect recovery in 3C-SiC crystals is studied. It is well
known that transient heating effects (or thermal spikes) occur when energetic
swift heavy ions (SHIs) deposit energy to the surrounding medium via
ionization. Here, we explore the dynamics of this transient event under high
background electric fields in 3C-SiC, which is what occurs when an ion strike
coincides with field-sensitive volumes. In this study, we use the Ensemble
Monte Carlo method to quantify how the energy deposition of the ionized regions
change in response to high background electric fields. Subsequently, we study
the relationship between the radiation-induced thermal spike and defect
recovery using molecular dynamics simulations. We find that field strengths
below the critical breakdown of wide bandgap devices are sufficient to
exacerbate the localized heating, which subsequently enhances the defect
recovery effect. This work is beneficial for 3C-SiC electronics and materials
used in high radiation environments.
