  This review covers the important advances in recent years in the physics of
thin film ferroelectric oxides, the strongest emphasis being on those aspects
particular to ferroelectrics in thin film form. We introduce the current state
of development in the application of ferroelectric thin films for electronic
devices and discuss the physics relevant for the performance and failure of
these devices. Following this we cover the enormous progress that has been made
in the first principles computational approach to understanding ferroelectrics.
We then discuss in detail the important role that strain plays in determining
the properties of epitaxial thin ferroelectric films. Finally, we look at the
emerging possibilities for nanoscale ferroelectrics, with particular emphasis
on ferroelectrics in non conventional nanoscale geometries.
