  We report on ballistic transport over more than 28 \mu m in graphene grown by
chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron
nitride. The structures are fabricated by an advanced dry van-der-Waals
transfer method and exhibit carrier mobilities of up to three million
cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring
the bend resistance in cross- and square-shaped devices. Temperature dependent
measurements furthermore prove that ballistic transport is maintained exceeding
1 \mu m up to 200 K.
