  Recent experiments reveal that the strained bulk HgTe can be regard as a
three-dimensional topological insulator (TI). Motivated by this, we explore the
strain effects on the magnetotransport properties of the HgTe surface states at
magnetic field. We analytically derive the zero frequency Hall and collisional
conductivities, and find that the substrate induced strain associated with the
surface index of carriers, can result in the well seperated surface quantum
Hall plateaus and Shubnikov-de Haas oscillations. These effects can be used to
generate and detect surface polarization.
