  The electronic anisotropy in MgB2, which arises from its layered crystal
structure is not completely clear until now. High quality c-oriented films
offer the opportunity of studying such property. MgB2 thin films were deposited
by using two methods both based on room temperature precursor deposition (by
Pulsed Laser Ablation) and ex-situ annealing in Mg atmosphere. The two methods
differ for the starting targets: stoichiometric MgB2 in one case and Boron in
the other. The two films presented in this paper are grown by means of the two
techniques on MgO substrates and are both c-oriented; they present TC values of
31.5 and 37.4 K respectively. Upper critical field measurements, up to 9T, with
the magnetic field in perpendicular and parallel directions in respect to the
film surface evidenced anisotropy ratios of 1.8 and 1.4 respectively. In this
paper we will discuss this remarkable and surprising difference also in
comparison with the literature data.
