  Aharonov-Bohm (AB) interference is reported for the first time in the
conductance of a vertical nanostructure based on a single GaAs/AlGaAs quantum
well (QW). The two lowest subbands of the well are spatially separated by the
Hartree barrier originating from electronic repulsion in the modulation-doped
QW and provide AB two-path geometry. Split-gates control the in-plane
electronic momentum dispersion. In our system, we have clearly demonstrated AB
interference in both electrostatic and magnetic modes. In the latter case the
magnetic field was applied parallel to the QW plane, and perpendicular to the
0.02 um^2 AB loop. In the electrostatic mode of operation the single-QW scheme
adopted led to large transconductance oscillations with relative amplitudes
exceeding 30 %. The relevance of the present design strategy for the
implementation of coherent nanoelectronic devices is underlined.
