  We report the results of X-ray spectroscopy and Raman measurements of
as-prepared graphene on a high quality copper surface and the same materials
after 1.5 years under different conditions (ambient and low humidity). The
obtained results were compared with density functional theory calculations of
the formation energies and electronic structures of various structural defects
in graphene/Cu interfaces. For evaluation of the stability of the carbon cover,
we propose a two-step model. The first step is oxidation of the graphene, and
the second is perforation of graphene with the removal of carbon atoms as part
of the carbon dioxide molecule. Results of the modeling and experimental
measurements provide evidence that graphene grown on high-quality copper
substrate becomes robust and stable in time (1.5 years). However, the stability
of this interface depends on the quality of the graphene and the number of
native defects in the graphene and substrate. The effect of the presence of a
metallic substrate with defects on the stability and electronic structure of
graphene is also discussed.
