  We study the resistive switching triggered by an applied electrical bias in
antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously
associated with an electric-field driven structural transition. Here we use
time-resolved measurements of the switching to probe the energy barrier
associated with the transition. We quantify the changes in the energy barrier
height with respect to the applied bias and find a linear decrease of the
barrier with increasing bias. Our observations support the potential of
antiferromagnetic transition metal oxides for spintronic applications.
