  Bismuth Selenide (Bi$_{2}$Se$_{3}$) is a topological insulator (TI) with a
structure consisting of stacked quintuple layers. Single crystal surfaces are
commonly prepared by mechanical cleaving. This work explores the use of low
energy Ar$^{+}$ ion bombardment and annealing (IBA) as an alternative method to
produce reproducible and stable Bi$_{2}$Se$_{3}$ surfaces under ultra-high
vacuum (UHV). It is found that a well-ordered surface can be prepared by a
single cycle of 1 keV Ar$^{+}$ ion bombardment and 30 min of annealing. Low
energy electron diffraction (LEED) and detailed low energy ion scattering
(LEIS) measurements show no differences between IBA-prepared surfaces and those
prepared by $\textit{in situ}$ cleaving in UHV. Analysis of the LEED patterns
shows that the optimal annealing temperature is 450{\deg}C. Angular LEIS scans
reveal the formation of surface Se vacancies when the annealing temperature
exceeds 520{\deg}C.
