  The magnetoresistance associated with quantum interference corrections in a
high mobility, gated InGaAs/InP quantum well structure is studied as a function
of temperature, gate voltage, and angle of the tilted magnetic field.
Particular attention is paid to the experimental extraction of phase-breaking
and spin-orbit scattering times when weak anti- localization effects are
prominent. Compared with metals and low mobility semiconductors the
characteristic magnetic field $B_{tr} = \hbar/4eD \tau$ in high mobility
samples is very small and the experimental dependencies of the interference
effects extend to fields several hundreds of times larger. Fitting experimental
results under these conditions therefore requires theories valid for arbitrary
magnetic field. It was found, however, that such a theory was unable to fit the
experimental data without introducing an extra, empirical, scale factor of
about 2. Measurements in tilted magnetic fields and as a function of
temperature established that both the weak localization and the weak
anti-localization effects have the same, orbital origin. Fits to the data
confirmed that the width of the low field feature, whether a weak localization
or a weak anti-localization peak, is determined by the phase-breaking time and
also established that the universal (negative) magnetoresistance observed in
the high field limit is associated with a temperature independent spin-orbit
scattering time.
