  Bound Magnetic Polarons (BMP) have been proposed to play an important role in
doped wide band gap semiconductors. We report the experimental evidence
supporting polaronic magnetism and the role of defects on it. Temperature
variation of electron paramagnetic resonance study reveals that the valence
state of cobalt is 2+ and its nearest environment in the system is distorted
tetrahedral in nature. Room temperature ferromagnetism have been found in all
the doped [Co (1, 3, 5) % doped 3C-SiC] samples. The Curie temperature, TC of
the samples have been found to be above 800 K. The isothermal magnetization
plots, to determine the strength of domain wall pinning were analyzed using the
Jiles-Atherton Model. The temperature variation of the anisotropic constant was
determined using Law of Approach to saturation (LAS), which decreases with
increase in temperature. Quantitative analysis of magnetic interaction has been
carried out and the result is explained by using BMP Model, which probably
arises out of the exchange interaction of Co2+ ions with related (Si, C)
defects.
