  High-performance non-volatile resistive random access memories (ReRAM) and
their small stimuli control are of immense interest for high-speed computation
and big-data processing in the emergent Internet of Things (IOT) arena. Here,
we examine the resistive switching (RS) behavior in growth controlled
HfO2/La0.67Sr0.33MnO3 heterostructures and their tunability under low magnetic
field. It is demonstrated that oxygen-deficient HfO2 films show bipolar
switching with high on/off ratio, stable retention, as well as good endurance
owing to the orthorhombic-rich phase constitution and charge
(de)-trapping-enabled Schottky-type conduction. Most importantly, we have
demonstrated that, the RS can be tuned by a very low externally applied
magnetic field (0-30 mT). Remarkably, application of a magnetic field of 30 mT
causes the RS to be fully quenched and frozen in the high resistance state
(HRS) even after the removal of magnetic field. However, the quenched state
could be resurrected by applying higher bias voltage than the one for initial
switching. This is argued to be a consequence of the electronically and
ionically active nature of the HfO2-x/LSMO interface on both sides, and its
susceptibility to the electric and low magnetic field effects. This result
could pave the way for new designs of interface engineered high-performance
oxitronic ReRAM devices.
