  Two recent experiments from Cornell and Columbia have reported
insulator-to-metal transitions in two-dimensional (2D) moir\'e transition metal
dichalcogenides (mTMD) induced by doping around half-filling, where the system
is a Mott insulator. In the current work, we consider the temperature dependent
resistivity of this metallic phase in the doped situation away from
half-filling, arguing that it arises from the strongly temperature dependent 2D
Friedel oscillations (i.e. finite momentum screening) associated with random
quenched charged impurities, leading to the observed strongly increasing
linear-in-$T$ resistivity in the metallic phase. Our theory appears to account
for the temperature-dependent metallic resistivity for doping around
half-filling of the effective moir\'e TMD band, showing that
temperature-dependent screened Coulomb disorder is an essential ingredient of
doped 2D mTMD physics.
