  While the discovery of Dirac and Weyl type excitations in electronic systems
is a major breakthrough in recent condensed matter physics, finding appropriate
materials for fundamental physics and technological applications, is an
experimental challenge. In all the reported materials, linear dispersion
survives only up to a few hundred meV from the Dirac or Weyl nodes. On the
other hand, real materials are subject to uncontrolled doping during
preparation and thermal effect near room temperature can hinder the rich
physics. In ZrSiS, ARPES measurements have shown an unusually robust linear
dispersion (up to $\sim$2 eV) with multiple non-degenerate Dirac nodes. In this
context, we present the magnetotransport study on ZrSiS crystal, which
represents a large family of materials (\textit{WHM} with \textit{W} = Zr, Hf;
\textit{H} = Si, Ge, Sn; \textit{M} = O, S, Se, Te) with identical band
topology. Along with extremely large and non-saturating magnetoresistance (MR),
$\sim$ 1.4 $\times$ 10$^{5}$ \% at 2 K and 9 T, it shows strong anisotropy
depending on the direction of the magnetic field. Quantum oscillation and Hall
effect measurements have revealed large hole and small electron Fermi pockets.
Non-trivial $\pi$ Berry phase confirms the Dirac fermionic nature for both
types of charge carriers. The long-sought relativistic phenomenon of massless
Dirac fermions, known as Adler-Bell-Jackiw chiral anomaly, has also been
observed.
