  The translation of emerging application concepts that exploit Resistive
Random Access Memory (ReRAM) into large-scale practical systems requires
realistic, yet computationally efficient, empirical models that can capture all
observed physical devices. Here, we present a Verilog-A ReRAM model built upon
experimental routines performed on TiOx-based prototypes. This model was based
on custom biasing protocols, specifically designed to reveal device switching
rate dependencies on a) bias voltage and b) initial resistive state. Our model
is based on the assumption that a stationary switching rate surface m(R,v)
exists for sufficiently low voltage stimulation. The proposed model comes in
compact form as it is expressed by a simple voltage dependent exponential
function multiplied with a voltage and initial resistive state dependent second
order polynomial expression, which makes it suitable for fast and/or
large-scale simulations.
