  It is of great importance to develop a photodetector system with an ultralow
radioactivity background in rare event searches. Silicon photomultipliers
(SiPMs) and application-specific integrated circuits (ASICs) are two ideal
candidates for low background photosensors and readout electronics,
respectively, because they are mainly composed of silicon, which can achieve
good radio-purity without considerable extra effort. However, interposers, used
to provide mechanical support and signal routes between the photosensor and the
electronics, are a bottleneck in building ultralow background photodetectors.
Silicon and quartz are two candidates to construct the low background
interposer because of their good radio-purity; nevertheless, it is non-trivial
to produce through silicon vias (TSV) or through quartz vias (TQV) on the large
area silicon or quartz wafer. In this work, based on double-sided TSV
interconnect technology, we developed the first prototype of a silicon
interposer with a size of 10~cm$\times$10~cm and a thickness of 320~$\mu$m. The
electrical properties of the interposer are carefully evaluated at room
temperature, and its performance is also examined at -110~$^\circ$C with an
integrated SiPM on the interposer. The testing results reveal quite promising
performance of the prototype, and the single photoelectron signals can be
clearly observed from the SiPM. The features of the observed signals are
comparable with those from the SiPM mounted on a normal FR4-based PCB. Based on
the success of the silicon interposer prototype, we started the follow-up
studies that aimed to further improve the performance and yield of the silicon
interposer, and eventually to provide a solution for building an ultralow
background photodetector system.
