  Using the tight-binding model, a multi-terminal superconductor(S) device is
proposed, where the structures of the center region are primitive grpahene(G)
and Y-shaped Kekul\'{e} graphene superlattice(GS), respectively. The
intravalley Andreev reflection is studied in this model through the utilization
of the non-equilibrium Green's function method. In the G/S device, due to the
time-reverse symmetry the dominant process of Andreev reflection is intervalley
reflection. In a three-terminal GS/S device, it has been observed that the
coefficient of intravalley Andreev reflection can surpass that of intervalley
reflection in crossed Andreev reflection. This is attributed to the coupling
between valleys K and -K within the first Brillouin zone, resulting in enhanced
intervalley scattering. The valley-dependent transport of Andreev reflection
can be influenced by the phase difference between superconductor terminals. The
valley polarization of the local Andreev reflection and the crossed Andreev
reflection could be controlled by adjusting the structure of the central
region.
