  Electronic devices for information storages and processes can be further
optimized by introducing the degree of freedom of anisotropy, which is strongly
dependent of their structural symmetry. Herein, a ReSeS monolayer with
asymmetrical double-faces are proposed to disclose the anisotropic electronic
structure. Meanwhile infrared fingerprint based on the lattice vibration is
also adopted to demonstrate the symmetry-breaking-dependent structural
transformation. First-principles calculations demonstrate that the geometry
deformation will induce the reconstruction of electronic structure. Ulteriorly,
both the dynamic properties of carrier and spectroscopic response can be
regulated by external strain and displays anisotropic behaviors. Our idea
provides threads for designing new regulable optoelectronic devices.
