  Diamond-type structure allotrope {\alpha}-Sn is attracting much attention as
a topological Dirac semimetal (TDS). In this study, we demonstrate that
{\alpha}-Sn undergoes a phase transition to another allotrope {\beta}-Sn with
superconductivity at low temperature by irradiating with a focused Ga ion beam
(FIB). To clarify the transition mechanism, we performed X-ray photoemission
spectroscopy (XPS) measurements on an {\alpha}-Sn thin film irradiated with FIB
and an as-grown {\alpha}-Sn thin film. The XPS results suggest that the local
annealing, which is one of the side effects of FIB, causes the transformation
from {\alpha}-Sn into {\beta}-Sn. Furthermore, the difference in the chemical
states between {\alpha}-Sn and {\beta}-Sn can be quantitatively explained by
the crystal structures rather than the degree of metallicity reflecting the
conductivity. These results propose a new way of fabricating TDS/superconductor
in-plane heterostructures based on {\alpha}-Sn and {\beta}-Sn.
