  The capacitance of a parallel plate capacitor can depend on applied magnetic
field. Previous studies have identified capacitance changes induced via
classical Lorentz force or spin-dependent Zeeman effects. Here we measure a
magnetization direction dependent capacitance in parallel-plate capacitors
where one plate is a ferromagnetic semiconductor, gallium manganese arsenide.
This anisotropic magneto-capacitance is due to the anisotropy in the density of
states dependent on the magnetization through the strong spin-orbit
interaction.
