  We show that the accumulation of spin-polarized electrons at a forward-biased
Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The
spin accumulation leads to an additional voltage drop across the barrier that
is suppressed by a small transverse magnetic field, which depolarizes the spins
in the semiconductor. The dependence of the electrical accumulation signal on
magnetic field, bias current, and temperature is in good agreement with the
predictions of a drift-diffusion model for spin-polarized transport.
