  A tunneling spectroscopy study is presented of superconducting MoN and
Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The
films exhibited a superconducting gap of 2meV and 2.4meV respectively with a
corresponding critical temperature of 11.5K and 13.4K, among the highest
reported $T_c$ values achieved by the ALD technique. Tunnel junctions were
obtained using a mechanical contact method with a Au tip. While the native
oxides of these films provided poor tunnel barriers, high quality tunnel
junctions with low zero bias conductance (below $\sim$10%) were obtained using
an artificial tunnel barrier of Al$_2$O$_3$ on the film's surface grown
$\textit{ex situ}$ by ALD. We find a large critical current density on the
order of $4\times 10^6$A/cm$^2$ at $T=0.8T_c$ for a 60nm MoN film and
demonstrate conformal coating capabilities of ALD onto high aspect ratio
geometries. These results suggest the ALD technique offers significant promise
for thin film superconducting device applications.
