  The development of multi-node quantum optical circuits has attracted great
attention in recent years. In particular, interfacing quantum-light sources,
gates and detectors on a single chip is highly desirable for the realization of
large networks. In this context, fabrication techniques that enable the
deterministic integration of pre-selected quantum-light emitters into
nanophotonic elements play a key role when moving forward to circuits
containing multiple emitters. Here, we present the deterministic integration of
an InAs quantum dot into a 50/50 multi-mode interference beamsplitter via
in-situ electron beam lithography. We demonstrate the combined emitter-gate
interface functionality by measuring triggered single-photon emission on-chip
with $g^{(2)}(0) = 0.13\pm 0.02$. Due to its high patterning resolution as well
as spectral and spatial control, in-situ electron beam lithography allows for
integration of pre-selected quantum emitters into complex photonic systems.
Being a scalable single-step approach, it paves the way towards multi-node,
fully integrated quantum photonic chips.
