  Following the success of p-Ge hot-hole lasers, there is also potential for
using other semiconductor materials, notably III-V's such as GaAs and InSb.
Previous analysis had suggested that a large effective mass ratio between the
heavy and light holes is advantageous, which implies that InSb would make an
excellent hot-hole laser. Using our Monte Carlo simulations of both GaAs and
InSb hot-hole lasers in combination with a rate equation model, we see that
previously accepted criteria used to predict performance are not always
reliable, and we suggest suitable alternatives. The simulation results include
gain and gain bandwidth as a function of field strength and laser frequency,
and alternative field orientations and photon polarizations are considered.
Comparisons are made with bulk p-Ge systems. The optimum conditions predicted
by our simulations could then be used in the design of quantum-well hot-hole
lasers.
