  We study the luminescence dynamics of telecom wavelength InAs quantum dots
grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as
a barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band.
The luminescence decay is well described in terms of the theoretical interband
transition strength without the impact of nonradiative recombination. The
intensity autocorrelation function shows clear anti-bunching photon statistics.
The results suggest that our quantum dots are useful for constructing a
practical source of single photons and quantum entangled photon pairs.
