  Doping Bi2Sr2Ca1Cu2O8+y with Co causes a superconductor-insulator transition.
We study correlations between changes in the electrical resistivity RHOab(T)
and the electronic bandstructure using identical single crystalline samples.
For undoped samples the resistivity is linear in temperature and has a
vanishing residual resistivity. In angle resolved photoemission these samples
show dispersing band-like states. Co-doping decreases TC and causes and
increase in the residual resistivity. Above a threshold Co-concentration the
resistivity is metallic (drab/dT >0) at room temperature, turns insulating
below a characteristic temperature Tmin and becomes super- conducting at even
lower temperature. These changes in the resistivity correlate with the
disappearance of the dispersing band-like states in angle resolved
photoemission. We show that Anderson localization caused by the impurity
potential of the doped Co-atoms provides a consistent explanation of all
experimental features. Therefore the TC reduction in 3d-metal doped high-
temperature superconductors is not caused by Abrikosov Gor'kov pair- breaking
but by spatial localization of the carriers. The observed suppression of TC
indicates that the system is in the homogenous limit of the
superconductor-insulator transition. The coexistance of insulating (dRHOab/dT
<0) normal state behavior and super- conductivity indicates that the
superconducting ground state is formed out of spatially almost localized
carriers.
