  We characterized optically In0.37Ga0.63As/GaAs quantum dots and
Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main
mechanisms of quantum dots photoluminescence quenching were identified. We
measured reflectivity spectra of the cavity structure which allowed us to
verify the proposed layer design and its fabrication by comparing them with the
results of simulations within the transfer matrix method.
