  We investigate the peculiarities of the "overshoot" phenomena in the
transverse Hall resistance R_{xy} in Si/SiGe. Near the low magnetic field end
of the quantum Hall effect plateaus, when the filling factor \nu approaches an
integer i, R_{xy} overshoots the normal plateau value h/ie^2. However, if
magnetic field B increases further, R_{xy} decreases to its normal value. It is
shown that in the investigated sample n-Si/Si_{0.7}Ge_{0.3}, overshoots exist
for almost all \nu. Existence of overshoot in R_{xy} observed in different
materials and for different \nu, where splitting of the adjacent Landau bands
has different character, hints at the common origin of this effect. Comparison
of the experimental curves R_{xy}(\nu) for \nu = 3 and \nu = 5 with and without
overshoot showed that this effect exist in the whole interval between plateaus,
not only in the region where R_{xy} exceeds the normal plateau value.
