  Previous high-resolution angle-resolved photoemission (ARPES) studies of
URu$_2$Si$_2$ have characterized the temperature-dependent behavior of
narrow-band states close to the Fermi level ($E_\mathrm{F}$) at low photon
energies near the zone center, with an emphasis on electronic reconstruction
due to Brillouin zone folding. A substantial challenge to a proper description
is that these states interact with other hole-band states that are generally
absent from bulk-sensitive soft x-ray ARPES measurements. Here we provide a
more global $k$-space context for the presence of such states and their
relation to the bulk Fermi surface topology using synchrotron-based wide-angle
and photon energy-dependent ARPES mapping of the electronic structure using
photon energies intermediate between the low-energy regime and the high-energy
soft x-ray regime. Small-spot spatial dependence, $f$-resonant photoemission,
Si 2$p$ core-levels, x-ray polarization, surface-dosing modification, and
theoretical surface slab calculations are employed to assist identification of
bulk versus surface state character of the $E_\mathrm{F}$-crossing bands and
their relation to specific U- or Si-terminations of the cleaved surface. The
bulk Fermi surface topology is critically compared to density functional theory
and to dynamical mean field theory calculations. In addition to clarifying some
aspects of the previously measured high symmetry $\Gamma$, Z and X points,
incommensurate 0.6a* nested Fermi-edge states located along Z-N-Z are found to
be distinctly different from the density functional theory Fermi surface
prediction. The temperature evolution of these states above $T_{HO}$, combined
with a more detailed theoretical investigation of this region, suggests a key
role of the N-point in the hidden order transition.
