  In this paper we discuss the measurement of charge collection in irradiated
silicon pixel sensors and the comparison with a detailed simulation. The
simulation implements a model of radiation damage by including two defect
levels with opposite charge states and trapping of charge carriers. The
modeling proves that a doubly peaked electric field generated by the two defect
levels is necessary to describe the data and excludes a description based on
acceptor defects uniformly distributed across the sensor bulk. In addition, the
dependence of trap concentrations upon fluence is established by comparing the
measured and simulated profiles at several fluences and bias voltages.
