  The DFT calculations were performed of densities of states of semiconductor
GaAs and magnetic semiconductor Ga0.9375Mn0.0625As. It is obtained that a part
of Mn3d- states is hybridized with valence band at Fermi level. The exchange
integrals of Anderson impurity model were calculated making use of atomic
Hartree-Fock package and angular momentum coupling technique. Theoretical Tc of
Ga0.9375Mn0.0625As obtained in the multiscale ab initio method is in reasonable
agreement with experiment. The application of Hubbard parameters in DFT
calculations using ultrasoft pseudopotentials is discussed.
