  We have measured the resistance noise of a two-dimensional (2D)hole system in
a high mobility GaAs quantum well, around the 2D metal-insulator transition
(MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases
strongly when the hole density p_s is decreased, increases slightly with
temperature (T) at the largest densities, and decreases strongly with T at low
p_s. The noise scales with the resistance, $S_R/R^2 \sim R^{2.4}$, as for a
second order phase transition such as a percolation transition. The p_s
dependence of the conductivity is consistent with a critical behavior for such
a transition, near a density p* which is lower than the observed MIT critical
density p_c.
