  Contact angle goniometry is conducted for epitaxial graphene on SiC. Although
only a single layer of epitaxial graphene exists on SiC, the contact angle
drastically changes from 69{\deg} on SiC substrates to 92{\deg} with graphene.
It is found that there is no thickness dependence of the contact angle from the
measurements of single, bi, and multi layer graphene and highly ordered
pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the
level of damage is investigated by Raman spectroscopy and correlation between
the level of disorder and wettability is reported. By using low power oxygen
plasma treatment, the wettability of graphene is improved without additional
damage, which can solve the adhesion issues involved in the fabrication of
graphene devices.
