  Tunneling conductance in diffusive normal metal / insulator / s-wave
superconductor (DN/I/S) junctions is calculated for various situations by
changing the magnitudes of the resistance and Thouless energy in DN and the
transparency of the insulating barrier. The generalized boundary condition
introduced by Yu. Nazarov [Superlattices and Microstructures 25 1221 (1999)] is
applied, where the ballistic theory by Blonder Tinkham and Klapwijk (BTK) and
the diffusive theory by Volkov Zaitsev and Klapwijk based on the boundary
condition of Kupriyanov and Lukichev (KL) are naturally reproduced. It is shown
that the proximity effect can enhance (reduce) the tunneling conductance for
junctions with a low (high) transparency. A wide variety of dependencies of
tunneling conductance on voltage bias is demonstrated including a $U$-shaped
gap like structure, a zero bias conductance peak (ZBCP) and a zero bias
conductance dip (ZBCD).
