  Nearest and higher neighbor distances as well as bond length distributions
(static and thermal) of the In_xGa_(1-x)As (0<x<1) semiconductor alloys have
been obtained from high real-space resolution atomic pair distribution
functions (PDFs). Using this structural information, we modeled the local
atomic displacements in In_xGa_(1-x)As alloys. From a supercell model based on
the Kirkwood potential, we obtained 3-D As and (In,Ga) ensemble averaged
probability distributions. This clearly shows that As atom displacements are
highly directional and can be represented as a combination of <100> and <111>
displacements. Examination of the Kirkwood model indicates that the standard
deviation (sigma) of the static disorder on the (In,Ga) sublattice is around
60% of the value on the As sublattice and the (In,Ga) atomic displacements are
much more isotropic than those on the As sublattice. The single crystal diffuse
scattering calculated from the Kirkwood model shows that atomic displacements
are most strongly correlated along <110> directions.
