  In this work, we have demonstrated a novel method to increase the
electro-optic interaction in an intensity modulator at the C-band by optimizing
the growth methodology of PZT with the metal (Ti/Pt) as a base material and the
PZT poling architecture. Here, we have used a patterned Pt layer for PZT
deposition instead of a buffer layer. By optimizing the PZT growth process, we
have been able to do poling of the fabricated PZT film in an arbitrary
direction as well as have achieved an enhanced electro-optic interaction,
leading to a DC spectrum shift of 304 pm/V and a V{\pi} L{\pi} value of 0.6
V-cm on a Si-based MZI. For an electro-optic modulator, we are reporting the
best values of DC spectrum shift and V{\pi} L{\pi} using perovskite as an
active material. The high-speed measurement has yielded a tool-limited
bandwidth of > 12GHz. The extrapolated bandwidth calculated using the slope of
the modulation depth is 45 GHz. We also show via simulation an optimized gap of
4.5 {\mu}m and a PZT thickness of 1 {\mu}m that gives us a less than 1 V-dB.
