  Both negative magnetoresistance and nonlinear magnetoresisitance were
observed in silicon strip nuclear radiation detector in room temperature if we
applied high magnetic field intensity in different direction. This result is
different with former report. We believe this is the result of coaction of high
electric field (Gunn effect) and high magnetic field, or because of the
variation of number of carriers and the carriers mobility. The weak
localization and Landau energy levels also affect the magnetoresistance.
Different crystal orientations have different energy band structures. Complex
band structures lead complex carriers mobility plus Landau energy levels. So
the magnetoresisitance effect is anisotropy.
