  Color center platforms have been at the forefront of quantum nanophotonics
for applications in quantum networking, computing, and sensing. However,
large-scale deployment of this technology has been stifled by a lack of ability
to integrate photonic devices at scale while maintaining the properties of
quantum emitters. We address this challenge in silicon carbide which has both
commercially available wafer-scale substrates and is a host to color centers
with desirable optical and spin properties. Using ion beam etching at an angle,
we develop a 5-inch wafer process for the fabrication of triangular
cross-section photonic devices in bulk 4H-SiC. The developed process has a
variability in etch rate and etch angle of 5.4% and 2.9%, respectively.
Furthermore, the integrated color centers maintain their optical properties
after the etch, thus achieving the nanofabrication goal of wafer-scale
nanofabrication in quantum-grade silicon carbide.
