  We present tunneling spectroscopy and transport measurements on disordered
indium oxide films that reveal the existence of a superconducting gap in an
insulating state. Two films on both sides of the disorder induced
superconductor to insulator transition (SIT) show the same energy gap scale at
low temperatures. This energy gap persists up to relatively high magnetic
fields and is observed across the magnetoresistance peak typical of disordered
superconductors. The results provide useful information for understanding the
nature of the insulating state in the disorder induced SIT.
