  We evaluate recombination of electrons and holes in optically pumped graphene
associated with the interband tunneling between electron-hole puddles and
calculate the recombination rate and time. It is demonstrated that this
mechanism can be dominant in a wide range of pumping intensities. We show that
the tunneling recombination rate and time are nonmonotonic functions of the
quasi-Fermi energies of electrons and holes and optical pumping intensity. This
can result in hysteresis phenomena.
