  The remote epitaxy was originally proposed to grow a film, which is not in
contact but crystallographically aligned with a substrate and easily detachable
due to a van der Waals material as a space layer. Here we show that the claimed
remote epitaxy is more likely to be nonremote `thru-hole' epitaxy. On a
substrate with thick and symmetrically incompatible van der Waals space layer
or even with a three-dimensional amorphous oxide film in-between, we
demonstratively grew GaN domains through thru-holes via connectedness-initiated
epitaxial lateral overgrowth, not only readily detachable but also
crystallographically aligned with a substrate. Our proposed nonremote thru-hole
epitaxy, which is embarrassingly straightforward and undemanding, can provide
wider applicability of the benefits known to be only available by the claimed
remote epitaxy.
