  Low temperature transport measurements on a p-GaAs quantum point contact are
presented which reveal the presence of a conductance anomaly that is markedly
different from the conventional `0.7 anomaly'. A lateral shift by asymmetric
gating of the conducting channel is utilized to identify and separate different
conductance anomalies of local and generic origins experimentally. While the
more generic 0.7 anomaly is not directly affected by changing the gate
configuration, a model is proposed which attributes the additional conductance
features to a gate-dependent coupling of the propagating states to localized
states emerging due to a nearby potential imperfection. Finite bias
conductivity measurements reveal the interplay between the two anomalies
consistently with a two-impurity Kondo model.
