  We conduct an experimental investigation of temperature dependence of spin
diffusion length in highly-doped n-type silicon by using a non-local 3-terminal
method. Whereas an effect of spin drift is not ignorable to bias- and
temperature-dependence of spin signals in non-metallic systems except for the
case of a non-local 4-terminal method, it is not fully conclusive how the spin
drift affects spin transport properties in highly-doped Si in a non-local
3-terminal method that is often used in Si spintronics. Here, we report on
temperature dependence of spin diffusion length in the Si, and it is clarified
that the spin transport is less affected by an external electric field.
