  We present the results of x-ray measurements on a hybrid CMOS detector that
uses a H2RG ROIC and a unique bonding structure. The silicon absorber array has
a 36{\mu}m pixel size, and the readout array has a pitch of 18{\mu}m; but only
one readout circuit line is bonded to each 36x36{\mu}m absorber pixel. This
unique bonding structure gives the readout an effective pitch of 36{\mu}m. We
find the increased pitch between readout bonds significantly reduces the
interpixel capacitance of the CMOS detector reported by Bongiorno et al. 2010
and Kenter et al. 2005.
