  This paper presents PANIC, a 3D discrete mesoscale dislocation dynamics model
which includes a fully quantitative treatment of both dislocation climb and
dislocation glide, including climb driven by both osmotic and mechanical
stresses and climb enabled by both bulk and pipe diffusion, including full
elastic anisotropy for materials with hexagonal symmetry. Efficient
calculations can be performed for epitaxial thin films, multilayers and device
structures with free surfaces, including those with irregular geometries (e.g.
islands). The model also includes the capability to simulate dislocation
dynamics during the growth of the thin films or heterostructures. The model has
been validated against experiment for thin films of GaN, AlN and AlGaN but is
widely applicable to other material systems, both hexagonal and cubic.
