  Accurately assessing the impact of electron-phonon interaction (EPI) on the
lattice thermal conductivity of semiconductors is crucial for the thermal
management of electronic devices and a unified physical understanding of this
issue is highly desired. In this work, we predict the lattice thermal
conductivities of typical direct and indirect bandgap semiconductors accounting
for EPI based on mode-level first-principles calculations. It is found that EPI
has a larger effect on the lattice thermal conductivity of $p$-type doping
compared to $n$-type doping in the same semiconductor at high charge carrier
concentrations. The stronger EPI in $p$-type doping is attributed to the
relatively higher electron density of states caused by the relatively larger
$p$-orbital component. Furthermore, EPI has a stronger influence on the lattice
thermal conductivity of $n$-type indirect bandgap semiconductors than $n$-type
direct bandgap semiconductors. This is attributed to the relatively lower
electron density of states in direct bandgap semiconductors stemming from the
$s$-orbital component. This work reveals that there exist diverse responses in
lattice thermal conductivity of $n$-type/$p$-type semiconductors, which can be
attributed to asymmetric EPIs.
