  We report results of transport measurements in the quantum critical regime of
the disorder tuned, 2D superconductor-insulator transition (SIT) in
homogeneously disordered films. We show that, as the superconducting transition
temperature decreases, the transition width grows, appearing to diverge at the
SIT. In addition, structure develops in the DC current-voltage characteristics
of films closest to the SIT indicating that the 2D superconductivity is driven
into a regime of extreme inhomogeneity. The data suggest a picture of the phase
transition in which large amplitude fluctuations occur as the amplitude is
suppressed to near zero by disorder.
