  We investigate in this paper properties of the spin resistivity in the
magnetic semiconducting MnTe of NiAs structure. MnTe is a crossroad
semiconductor with a large band gap. It is an antiferromagnet with the N\'eel
temperature around 310K. Due to this high N\'eel temperature, there are many
applications using its magnetic properties. The method we use here is the Monte
Carlo simulation in which we take into account the interaction between
itinerant spins and lattice Mn spins. Our results show a very good agreement
with experiments on the shape of the spin resistivity near the N\'eel
temperature.
