  The Sb2Te3 crystals are grown using the conventional self flux method via
solid state reaction route, by melting constituent elements (Sb and Te) at high
temperature (850 C), followed by slow cooling (2 C per hour).The weak anti
localization (WAL) related low field (2 Tesla) magneto-conductance at low
temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami-
Larkin - Nagaoka (HLN) model. Summarily, the short letter reports an easy and
versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI)
and its brief physical property characterization.
