  In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET
has been presented. At the same time, effects of device parameter variation on
ballistic, subthrshold and short channel performance is observed and presented.
The ballistic simulation result has also been used to observe the electrostatic
performance and Capacitance-Voltage characteristics of the device. With
constant urge to keep in pace with Moore's law as well as aggressive scaling
and device operation reaching near ballistic limit, a full quantum transport
study at 10nm gate length is necessary. Our simulation reveals an increase in
device drain current with increasing channel cross-section. However short
channel performance and subthreshold performance get degraded with channel
cross-section increment. Increasing device cross-section lowers threshold
voltage of the device. The effect of gate oxide thickness on ballistic device
performance is also observed. Increase in top gate oxide thickness affects
device performance only upto a certain value. The thickness of the top gate
oxide however shows no apparent effect on device threshold voltage. The
ballistic simulation study has been further used to extract ballistic injection
velocity of the carrier and ballistic carrier mobility in the channel. The
effect of device dimension and gate oxide thickness on ballistic velocity and
effective carrier mobility is also presented.
