  The results of experimental and theoretical studies of zero-bias anomaly
(ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6T are
presented. A specific feature of the structures is a coexistence of the 2D and
3D states at the Fermi energy near the semiconductor surface. The dependence of
the measured ZBA amplitude on the strength and orientation of the applied
magnetic field is in agreement with the proposed theoretical model. According
to this model, electrons tunnel into 2D states, and move diffusively in the 2D
layer, whereas the main contribution to the screening comes from 3D electrons.
