  Highly crystalline and easily feasible topological insulator-superconductor
(TI-SC) heterostructures are crucial for the development of practical
topological qubit devices. The optimal superconducting layer for TI-SC
heterostructures should be highly resilient against external contaminations and
structurally compatible with TIs. In this study, we provide a solution to this
challenge by showcasing the growth of a highly crystalline TI-SC
heterostructure using refractory TiN (111) as the superconducting layer. This
approach can eliminate the need for in-situ cleaving or growth. More
importantly, the TiN surface shows high resilience against contaminations
during air exposure, as demonstrated by the successful recyclable growth of
Bi2Se3. Our findings indicate that TI-SC heterostructures based on nitride
films are compatible with device fabrication techniques, paving a path to the
realization of practical topological qubit devices in the future.
