  We report on the low temperature measurements of the magnetotransport in
Si-doped InAs quantum wire in the presence of a charged tip of an atomic force
microscope serving as a mobile gate, i.e. scanning gate microscopy (SGM). By
altering the carrier concentration with back gate voltage, we transfer the wire
through several transport regimes: from residual Coulomb blockade to nonlinear
resonance regime, followed by linear resonance regime and, finally, to almost
homogeneous diffusion regime. We demonstrate direct relations between patterns
measured with scanning gate microscopy and spectra of universal conductance
fluctuations. A clear sign of fractal behavior of magnetoconductance dependence
is observed for non-linear and linear resonance transport regimes.
