  We study the temperature and gate voltage dependence of the conductance of
the single electron transistor focusing on highly conducting devices. Electron
tunneling is treated nonperturbatively by means of path integral Monte Carlo
techniques and the conductance is determined from the Kubo formula. A
regularized singular value decomposition scheme is employed to calculate the
conductance from imaginary time simulation data. Our findings are shown to
bridge between available analytical results in the semiclassical and
perturbative limits and are found to explain recent experimental results in a
regime not accessible by earlier methods.
