  We report results of investigation of the low-frequency electronic excess
noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers.
Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionally
high breakdown current density. It was found that TaSe3 nanowires have lower
levels of the normalized noise spectral density, compared to carbon nanotubes
and graphene. The temperature-dependent measurements revealed that the
low-frequency electronic 1/f noise becomes the 1/f^2-type as temperature
increases to about 400 K, suggesting the onset of electromigration (f is the
frequency). Using the Dutta- Horn random fluctuation model of the electronic
noise in metals we determined that the noise activation energy for quasi-1D
TaSe3 nanowires is approximately E_P=1.0 eV. In the framework of the empirical
noise model for metallic interconnects, the extracted activation energy,
related to electromigration, is E_A=0.88 eV, consistent with that for Cu and Al
interconnects. Our results shed light on the physical mechanism of
low-frequency 1/f noise in quasi-1D van der Waals semi-metals and suggest that
such material systems have potential for ultimately downscaled local
interconnect applications.
