  We report measured rate coefficients for electron-ion recombination for Si10+
forming Si9+ and for Si9+ forming Si8+, respectively. The measurements were
performed using the electron-ion merged-beams technique at a heavy-ion storage
ring. Electron-ion collision energies ranged from 0 to 50 eV for Si9+ and from
0 to 2000 eV for Si10+, thus, extending previous measurements for Si10+ [Orban
et al. 2010, Astrophys. J. 721, 1603] to much higher energies. Experimentally
derived rate coefficients for the recombination of Si9+ and Si10+ ions in a
plasma are presented along with simple parameterizations. These rate
coefficients are useful for the modeling of the charge balance of silicon in
photoionized plasmas (Si9+ and Si10+) and in collisionally ionized plasmas
(Si10+ only). In the corresponding temperature ranges, the experimentally
derived rate coefficients agree with the latest corresponding theoretical
results within the experimental uncertainties.
