  Low-frequency dielectric spectra of high-resistivity GaSe layered crystals
have been studied on the samples clamped between two insulating parallel plates
at frequencies up to 100 kHz. The measurements have been carried out at
different uniaxial stresses up to $2.4\times10^5$ Pa applied along the c-axis
normal to crystal layer's plane. It is revealed that the dielectric spectra of
high-resistivity GaSe layered crystals with insulating plates obey a universal
power law ${\sim}\omega^{n-1}$, where ${\omega}$ is the angular frequency and
$n\approx 0.8$, earlier observed on high-resistivity GaSe crystals with
indium-soldered contacts. The same type of spectra on the crystals with
different types of contacts (insulating and ohmic) confirms the bulk character
of the observed polarization caused by hopping charge carriers. It is shown
that the frequency-dependent dielectric constant increases linearly with the
uniaxial stress characterized by the coefficient
${\Delta}{\epsilon}/({\epsilon}{\Delta}{p})=8{\times}10^{-7}$ Pa$^{-1}$. A
slight increase of power $1-n$ with the stress is observed, that leads to a
stronger dielectric dispersion. The strong stress dependence of the
low-frequency dielectric constant in high-resistivity GaSe crystals may be
referred to the presence of the formations of elementary dipoles, rotations of
which correspond to hops of localized charge carriers.
