  The model of hydrogen migration and of the reactions of hydrogen atoms with
electrically active impurity, developed earlier, has been applied to simulate
hydrogen diffusion and passivation process during plasma deuteration of silicon
substrates doped with boron. The calculated deuterium concentration profiles
agree well in the length of the passivated region with the experimental data
obtained on treatment in hydrogen plasma at a temperature of 200 Celsius
degrees for 5, 10, and 15 minutes. On the other hand, to achieve a good fit to
the abruptness of the calculated profiles between the passivated and
unpassivated regions, it is necessary to suppose that the values of the
parameters that describe the absorption of hydrogen interstitials by
electrically active dopant atoms decrease with increase in the depth of the
passivated region. For example, nonuniform spatial distributions of
nonequilibrium point defects generated during plasma treatment can lead to a
spatial dependence of hydrogen absorption.
