  Cryogenic memristor-based DC sources offer a promising avenue for in situ
biasing of quantum dot arrays. In this study, we present experimental results
and discuss the scaling potential for such DC sources. We first demonstrate the
operation of a commercial discrete operational amplifier down to 1.2K which is
used on the DC source prototype. Then, the tunability of the memristor-based DC
source is validated by performing several 250mV-DC sweeps with a resolution of
10mV at room temperature and at 1.2K. Additionally, the DC source prototype
exhibits a limited output drift of $\approx1\mathrm{\mu Vs^{-1}}$ at 1.2K. This
showcases the potential of memristor-based DC sources for quantum dot biasing.
Limitations in power consumption and voltage resolution using discrete
components highlight the need for a fully integrated and scalable complementary
metal-oxide-semiconductor-based (CMOS-based) approach. To address this, we
propose to monolithically co-integrate emerging non-volatile memories (eNVMs)
and 65nm CMOS circuitry. Simulations reveal a reduction in power consumption,
down to $\mathrm{10\mu W}$ per DC source and in footprint. This allows for the
integration of up to one million eNVM-based DC sources at the 4.2K stage of a
dilution fridge, paving the way for near term large-scale quantum computing
applications.
