  Organic semiconductors are usually not thought to show outstanding
performance in highly-integrated, sub 100 nm transistors. Consequently,
single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors
are the material of choice at these nanoscopic dimensions. Here, we show that
using a novel vertical field-effect transistor design with a channel length of
only 40 nm and a footprint of 2 x 80 x 80 nm$^2$, high electrical performance
with organic polymers can be realized when using electrolyte gating. Our
organic transistors combine high on-state current densities of above 3
MA/cm$^2$, on/off current modulation ratios of up to 108 and large
transconductances of up to 5000 S/m. Given the high on-state currents at yet
large on/off ratios, our novel structures also show promise for use in
artificial neural networks, where they could operate as memristive devices with
sub 100 fJ energy usage.
