  In recent decades, different types of plasma sources have been used for
various types of plasma processing, such as, etching and thin film deposition.
The critical parameter for effective plasma processing is high plasma density.
One type of high density plasma source is Microwave sheath-Voltage combination
Plasma (MVP). In the present investigation, a better design of MVP source is
reported, in which over-dense plasma is generated for low input microwave
powers. The results indicate that the length of plasma column increases
significantly with increase in input microwave power.
