  Although in-situ transmission electron microscopy (TEM) of nanomaterials has
been gaining importance in recent years, difficulties in sample preparation
have limited the number of studies on electrical properties. Here, a
support-based preparation method of individual 1D and 2D materials is
presented, which yields a reproducible sample transfer for electrical
investigation by in-situ TEM. Using a mechanically rigid support grid allows
the reproducible transfer and contacting to in-situ chips by focused ion beam
with minimum damage and contamination. The transfer quality is assessed by
exemplary studies of different nanomaterials, including a monolayer of WS2.
Preliminary results from in-situ test experiments give an overview of possible
studies, which concern the interplay between structural properties and
electrical characteristics on the individual nanomaterial level as well as
failure analysis under electrical current or studies of electromigration, Joule
heating and related effects. The TEM measurements can be enriched by additional
correlative microscopy techniques, which allow the study with a spatial
resolution in the range of a few microns. Although developed for in-situ TEM,
the present transfer method is also applicable to transferring nanomaterials to
similar chips for performing further studies or even for using them in
potential electrical/optoelectronic/sensing devices.
