  We study band alignment in wurtzite-zincblende polytype InAs heterostructured
nanowires using temperature dependent resonance Raman measurements. Nanowires
having two different wurtzite fractions are investigated. Using visible
excitation wavelengths in resonance Raman measurements, we probe the electronic
band alignment of these semiconductor nanowires near a high symmetry point of
the Brillouin zone (E$_{1}$ gap). The strain in the crystal structure, as
revealed from the shift of the phonon mode, explains the observed band
alignment at the wurtzite-zincblende interface. Our experimental results are
further supported by electronic structure calculations for such periodic
heterostructured interface.
