  We report new measurements on sup-gap energy structure originating from
multiple Andreev reflections in mesoscopic SNS junctions. The junctions were
fabricated in a planar geometry with high transparency superconducting contacts
of Al deposited on highly diffusive and surface d-doped n++-GaAs. For samples
with a normal GaAs region of active length 0.3um the Josephson effect with a
maximal supercurrent Ic=3mA at T=237mK was observed. The sub-gap structure was
observed as a series of local minima in the differential resistance at dc bias
voltages V=2D/ne with n=1,2,4 i.e. only the even sub-gap positions. While at
V=2D/e (n=1) only one dip is observed, the n=2, and the n=4 sub-gap structures
each consists of two separate dips in the differential resistance. The mutual
spacing of these two dips is independent of temperature, and the mutual spacing
of the n=4 dips is half of the spacing of the n=2 dips. The voltage bias
positions of the sub-gap differential resistance minima coincide with the
maxima in the oscillation amplitude when a magnetic field is applied in an
interferometer configuration, where one of the superconducting electrodes has
been replaced by a flux sensitive open loop.
