  Most oscillating reactions (ORs) happen in solutions. Few existing
solid-based ORs either happen on solid/gas (e.g., oxidation or corrosion) or
solid/liquid interfaces, or at the all-solid interfaces neighboring to metals
or ionic conductors (e.g., electrolysis or electroplate). We report in this
paper a new type of all-solid based OR that happens at the insulator (amorphous
SiO$_2$)/semiconductor (Si) interface with the interfacial point defects as the
oscillating species. This OR is the first example of the point-defect coupled
ORs (PDC-ORs) proposed by H. Schmalzried et al. and J. Janek et al. decades
ago. We use proton implantation as the driving force of the oscillation, and
employ techniques common in semiconductor device characterization to monitor
the oscillation in situ. This approach not only overcomes the difficulties
associated with detecting reactions in solids, but also accurately measure the
oscillating ultra-low concentration ($10^{10}\sim10^{11}$ cm$^{-2}$) of the
interfacial charged point-defects. We propose a mechanism for the reported
PDC-OR based on the Brusselator model by identifying the interfacial reactions.
