  A bilayer graphene based electrostatically doped tunnel field-effect
transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon
TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs
operate based on different bandgaps induced by vertical electric fields in the
source, channel, and drain regions without any chemical doping. The performance
of the transistor is evaluated by self-consistent quantum transport
simulations. This device has several advantages: 1) ultra-low power (VDD=0.1V),
2) high performance (ION/IOFF>104), 3) steep subthreshold swing (SS<10mv/dec),
and 4) electrically configurable between N-TFET and P-TFET post fabrication.
Here, the operation principle of the BED-TFET and its performance sensitivity
to the device design parameters are studied.
