  We demonstrate the transfer of the superconducting properties of NbTi---a
large-gap high-critical-field superconductor---into an InAs heterostructure via
a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson
junction and a gate-defined quantum point contact, are used to characterize
interface transparency and the two-step proximity effect. In the Josephson
junction, multiple Andreev reflection reveal near-unity transparency, with an
induced gap $\Delta^*=0.50~\mathrm{meV}$ and a critical temperature of
$7.8~\mathrm{K}$. Tunneling spectroscopy yields a hard induced gap in the InAs
adjacent to the superconductor of $\Delta^*=0.43~\mathrm{meV}$ with
substructure characteristic of both Al and NbTi.
