  We calculate the intensity of the polariton mediated inelastic light
scattering in semiconductor microcavities. We treat the exciton-photon coupling
nonperturbatively and incorporate lifetime effects in both excitons and
photons, and a coupling of the photons to the electron-hole continuum. Taking
the matrix elements as fitting parameters, the results are in excellent
agreement with measured Raman intensities due to optical phonons resonant with
the upper polariton branches in II-VI microcavities with embedded CdTe quantum
wells.
