  In this work, we investigate the radiation-induced segregation (RIS)
resulting from the coupling between the atomic and point defect (PD) fluxes
towards the structural defects of the microstructure. This flux coupling
depends on the migration mechanisms of PDs and atoms, including thermal
diffusion mechanisms and forced atomic relocations (FAR) occurring in
displacement cascades. We derive an analytic model of the PD and solute RIS
profiles accounting for PD production and mutual recombination, the FAR
mechanism, and the overall sink strength of the microstructure controlling the
elimination of PDs at structural defects. From this model, we present a
parametric investigation of diffusion and RIS properties in dilute Fe-$B$ ($B$
= P, Mn, Cr, Si, Ni, and Cu) binary alloys, in the form of quantitative
temperature/radiation flux/sink strength maps. As in previous works, we
distinguish three kinetic domains for the diffusion and RIS properties: the
recombination domain, the sink domain, and the thermal domain. Both our
analytical approach and numerical applications demonstrate that the diffusion
and RIS behaviors of PDs and solute atoms largely differ from one kinetic
domain to another. Moreover, at high radiation flux, low temperature, and large
sink strength, FARs tend to destroy the solute RIS profiles and therefore
reduce the overall amount of RIS by forcing the mixing of solute and host
atoms, especially close to PD sinks. Finally, we provide quantitative criteria
to emulate in-reactor RIS behaviors by ion irradiation.
