  We carry out a calculation of the phonon-drag contribution $S_g$ to the
thermoelectric power of bulk semiconductors and quantum well structures for the
first time using the balance equation transport theory extended to the weakly
nonuniform systems. Introducing wavevector and phonon-mode dependent relaxation
times due to phonon-phonon interactions, the formula obtained can be used not
only at low temperatures where the phonon mean free path is determined by
boundary scattering, but also at high temperatures. In the linear transport
limit, $S_g$ is equivalent to the result obtained from the Boltzmann equation
with a relaxation time approximation. The theory is applied to experiments and
agreement is found between the theoretical predictions and experimental
results. The role of hot-electron effects in $S_g$ is discussed. The importance
of the contribution of $S_g$ to thermoelectric power in the hot-electron
transport condition is emphasized.
