  We have studied supercurrent-assisted formation of the resistive state in
nano-structured Nb and NbN superconducting films after absorption of a single
photon. In amorphous narrow NbN strips the probability of the resistive state
formation has a pronounced spectral cut-off. The corresponding threshold photon
energy decreases with the bias current. Analysis of the experimental data in
the framework of the generalized hot-spot model suggests that the quantum yield
for near-infrared photons increases faster than the photon nergy. Relaxation of
the resistive state depends on the photon energy making the phenomenon feasible
for the development of energy resolving single-photon detectors.
