  We present a physics-based circuit-compatible model for double-gated
two-dimensional semiconductor based field effect transistors, which provides
explicit expressions for the drain current, terminal charges and intrinsic
capacitances. The drain current model is based on the drift-diffusion mechanism
for the carrier transport and considers Fermi-Dirac statistics coupled with an
appropriate field-effect approach. The terminal charge and intrinsic
capacitance models are calculated adopting a Ward-Dutton linear charge
partition scheme that guarantees charge-conservation. It has been implemented
in Verilog-A to make it compatible with standard circuit simulators. In order
to benchmark the proposed modeling framework we also present experimental DC
and high-frequency measurements of a purposely fabricated monolayer MoS2 FET
showing excellent agreement between the model and the experiment and thus
demonstrating the capabilities of the combined approach to predict the
performance of 2DFETs.
