  We develop a strategy for graphene growth on Ru(0001) followed by
silicon-layer intercalation that not only weakens the interaction of graphene
with the metal substrate but also retains its superlative properties. This
G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA),
was characterized by scanning tunneling microscopy/spectroscopy and angle
resolved electron photoemission spectroscopy. These experiments show high
structural and electronic qualities of this new composite. The SIA allows for
an atomic control of the distance between the graphene and the metal substrate
that can be used as a top gate. Our results show potential for the next
generation of graphene-based materials with tailored properties.
