  We study the resistive switching (RS) mechanism as way to obtain multi-level
memory cell (MLC) devices. In a MLC more than one bit of information can be
stored in each cell. Here we identify one of the main conceptual difficulties
that prevented the implementation of RS-based MLCs. We present a method to
overcome these difficulties and to implement a 6-bit MLC device with a
manganite-based RS device. This is done by precisely setting the remnant
resistance of the RS-device to an arbitrary value. Our MLC system demonstrates
that transition metal oxide non-volatile memories may compete with the
currently available MLCs.
