  In this work, we propose a dual-port cell design to address the pass disturb
in vertical NAND storage, which can pass signals through a dedicated and
string-compatible pass gate. We demonstrate that: i) the pass disturb-free
feature originates from weakening of the depolarization field by the pass bias
at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by
channel at the low-${V}_{TH}$ (LVT) state; ii) combined simulations and
experimental demonstrations of dual-port design verify the disturb-free
operation in a NAND string, overcoming a key challenge in single-port designs;
iii) the proposed design can be incorporated in a highly scaled vertical NAND
FeFET string and the pass gate can be incorporated into the existing 3D NAND
with the negligible overhead of the pass gate interconnection through a global
bottom pass gate contact in the substrate.
