  Spatio-temporal bifurcations and complex dynamics in globally coupled
intrinsically bistable electrochemical systems with an S-shaped current-voltage
characteristic under galvanostatic control are studied theoretically on a
one-dimensional domain. The results are compared with the dynamics and the
bifurcation scenarios occurring in a closely related model which describes
pattern formation in semiconductors. Under galvanostatic control both systems
are unstable with respect to the formation of stationary large amplitude
current domains. The current domains as well as the homogeneous steady state
exhibit oscillatory instabilities for slow dynamics of the potential drop
across the double layer, or across the semiconductor device, respectively. The
interplay of the different instabilities leads to complex spatio-temporal
behavior. We find breathing current domains and chaotic spatio-temporal
dynamics in the electrochemical system. Comparing these findings with the
results obtained earlier for the semiconductor system, we outline bifurcation
scenarios leading to complex dynamics in globally coupled bistable systems with
subcritical spatial bifurcations.
