  $\mathrm{La_{1.85}Sr_{0.15}CuO_4}$/$\mathrm{La_2CuO_4}$ (LSCO15/LCO) bilayers
with a precisely controlled thickness of N unit cells (UCs) of the former and M
UCs of the latter ([LSCO15\_N/LCO\_M]) were grown on (001)-oriented {\slao}
(SLAO) substrates with pulsed laser deposition (PLD). X-ray diffraction and
reciprocal space map (RSM) studies confirmed the epitaxial growth of the
bilayers and showed that a [LSCO15\_2/LCO\_2] bilayer is fully strained,
whereas a [LSCO15\_2/LCO\_7] bilayer is already partially relaxed. The
\textit{in situ} monitoring of the growth with reflection high energy electron
diffraction (RHEED) revealed that the gas environment during deposition has a
surprisingly strong effect on the growth mode and thus on the amount of
disorder in the first UC of LSCO15 (or the first two monolayers of LSCO15
containing one $\mathrm{CuO_2}$ plane each). For samples grown in pure
$\mathrm{N_2O}$ gas (growth type-B), the first LSCO15 UC next to the SLAO
substrate is strongly disordered. This disorder is strongly reduced if the
growth is performed in a mixture of $\mathrm{N_2O}$ and $\mathrm{O_2}$ gas
(growth type-A). Electric transport measurements confirmed that the first UC of
LSCO15 next to the SLAO substrate is highly resistive and shows no sign of
superconductivity for growth type-B, whereas it is superconducting for growth
type-A. Furthermore, we found, rather surprisingly, that the conductivity of
the LSCO15 UC next to the LCO capping layer strongly depends on the thickness
of the latter. A LCO capping layer with 7~UCs leads to a strong localization of
the charge carriers in the adjacent LSCO15 UC and suppresses superconductivity.
The magneto-transport data suggest a similarity with the case of weakly hole
doped LSCO single crystals that are in a so-called {"{cluster-spin-glass
state}"}
