  When semiconducting transition metal dichalcogenides heterostructures are
stacked the twist angle and lattice mismatch leads to a periodic moir\'e
potential. As the angle between the layers changes, so do the electronic
properties. As the angle approaches 0- or 60-degrees interesting
characteristics and properties such as modulations in the band edges, flat
bands, and confinement are predicted to occur. Here we report scanning
tunneling microscopy and spectroscopy measurements on the band gaps and band
modulations in MoSe2/WSe2 heterostructures with near 0 degree rotation (R-type)
and near 60 degree rotation (H-type). We find a modulation of the band gap for
both stacking configurations with a larger modulation for R-type than for
H-type as predicted by theory. Furthermore, local density of states images show
that electrons are localized differently at the valence band and conduction
band edges.
