  Heterostructures prepared from graphene and fluorographene (FG) using the
technology of 2D printing on solid and flexible substrates were fabricated and
studied. Excellent stability of printed graphene layers and, to a lesser
degree, composite graphene: PEDOT: PSS layers were shown. Extraordinary
properties of FG as an insulating layer for graphene-based heterostructures at
fluorination degree above 30% were demonstrated. It is shown that the leakage
current in thin (20-40 nm) films is normally smaller than 10^-8 A/cm2, the
breakdown field being greater than 108 V/cm. In hybrid structures with printed
FG layers in which graphene was transferred onto, or capsulated with, an FG
layer, an increase in charge-carrier mobility and material conductivity
amounting to 5-6 times was observed. The spectrum of future applications of FG
layers can be further extended due to the possibility of obtaining, from weakly
fluorinated graphene (< 20%), functional layers exhibiting a negative
differential resistance behavior and, at fluorination degrees of 20-23%,
field-effect-transistor channels with current modulation reaching several
orders. Composite or bilayer films based on fluorographene and V2O5 or
polyvinyl alcohol exhibit a stable resistive switching behavior. On the whole,
graphene/FG heterostructures enjoy huge potential for their use in a wide
spectrum of application, including flexible electronics.
