  In this work, we investigate the possibility of enhancing the thermoelectric
power (Seebeck coefficient) in graphene devices by strain and doping
engineering. While a local strain can result in the misalignment of Dirac cones
of different graphene sections in the k-space, doping engineering leads to
their displacement in energy. By combining these two effects, we demonstrate
that a conduction gap as large as a few hundreds meV can be achieved and hence
the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in
graphene doped heterojunctions with a locally strained area. Such
hetero-channels appear to be very promising for enlarging the applications of
graphene devices as in strain and thermal sensors.
