  Quantum shot noise probes the dynamics of charge transfers through a quantum
conductor, reflecting whether quasiparticles flow across the conductor in a
steady stream, or in syncopated bursts. We have performed high-sensitivity shot
noise measurements in a quantum dot obtained in a silicon
metal-oxide-semiconductor field-effect transistor. The quality of our device
allows us to precisely associate the different transport regimes and their
statistics with the internal state of the quantum dot. In particular, we report
on large current fluctuations in the inelastic cotunneling regime,
corresponding to different highly-correlated, non-Markovian charge transfer
processes. We have also observed unusually large current fluctuations at low
energy in the elastic cotunneling regime, the origin of which remains to be
fully investigated.
