  A crystal surface which is miscut with respect to a high symmetry plane
exhibits steps with a characteristic distance. It is argued that the continuum
description of growth on such a surface, when desorption can be neglected, is
given by the anisotropic version of the conserved KPZ equation (T. Sun, H. Guo,
and M. Grant, Phys. Rev. A 40, 6763 (1989)) with non-conserved noise. A
one--loop dynamical renormalization group calculation yields the values of the
dynamical exponent and the roughness exponent which are shown to be the same as
in the isotropic case. The results presented here should apply in particular to
growth under conditions which are typical for molecular beam epitaxy.
