  The creation of point defects in the crystal lattices of various
semiconductors by subthreshold events has been reported on by a number of
groups. These observations have been made in great detail using sensitive
electrical techniques but there is still much that needs to be clarified.
Experiments using Ge and Si were performed that demonstrate that energetic
particles, the products of collisions in the electron beam, were responsible
for the majority of electron-beam deposition (EBD) induced defects in a
two-step energy transfer process. Lowering the number of collisions of these
energetic particles with the semiconductor during metal deposition was
accomplished using a combination of static shields and superior vacuum
resulting in devices with defect concentrations lower than $
10^{11}\,$cm$^{-3}$, the measurement limit of our deep level transient
spectroscopy (DLTS) system. High energy electrons and photons that samples are
typically exposed to were not influenced by the shields as most of these
particles originate at the metal target thus eliminating these particles as
possible damage causing agents. It remains unclear how packets of energy that
can sometimes be as small of 2eV travel up to a $\mu$m into the material while
still retaining enough energy, that is, in the order of 1eV, to cause changes
in the crystal. The manipulation of this defect causing phenomenon may hold the
key to developing defect free material for future applications.
