  Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity
are prerequisites for development of next generation power efficient spintronic
devices. In this context, heavy metals (e.g. Pt, W etc.), topological
insulators, antiferromagnets are usually considered because they exhibit high
spin-orbit coupling (SOC). In addition to the above materials, 5d transition
metal oxide e.g. Iridium Oxide (IrO 2 ) is a potential candidate which exhibits
high SOC strength. Here we report a study of spin pumping and inverse spin Hall
effect (ISHE), via ferromagnetic resonance (FMR), in IrO 2 /CoFeB system. We
identify the individual contribution of spin pumping and other spin
rectification effects in the magnetic layer, by investigating the in-plane
angular dependence of ISHE signal. Our analysis shows significant contribution
of spin pumping effect to the ISHE signal. We show that polycrystalline IrO 2
thin film exhibits high spin Hall conductivity and spin Hall angle which are
comparable to the values of Pt.
