  We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial
thin films, resulting in a giant flexoelectric effect. Using grazing-incidence
in-plane X-ray diffraction, we measured strain gradients in the films, which
were 6 or 7 orders of magnitude larger than typical values reported for bulk
oxides. The combination of transmission electron microscopy, electrical
measurements, and electrostatic calculations showed that flexoelectricity
provides a means of tuning the physical properties of ferroelectric epitaxial
thin films, such as domain configurations and hysteresis curves.
