  Emerging devices such as a neuromorphic device and a qubit can use the Mott
transition phenomenon, but in particular, the diverging mechanism of the
phenomenon remains to be clarified. The diverging-effective mass near Mott
insulators was measured in strongly correlated Mott systems such as a fermion
$^3$He and a Si metal-oxide-semiconductor-field-effect transistor, and is
closely fitted by the effective mass obtained by the extension of the
Brinkman-Rice(BR) picture,
$m^*/m=1/[1-(U/U_c)^2]=1/(1-{\kappa}^2_{BR}{\rho}^4)$ when
${\kappa}^2_{BR}{\approx}1({\neq}$1), where $0<U/U_c={\kappa}_{BR}{\rho}^2<1$,
correlation strength is ${\kappa}_{BR}$, band-filling is ${\rho}$. Its
identification is a percolation of a constant mass in the Brinkman-Rice
picture. Over ${\kappa}_{BR}{\approx}0.96$ is evaluated.
