  We report the electronic properties of single crystals of candidate
nodal-line semimetal CaAgP. The transport properties of CaAgP are understood
within the framework of a hole-doped nodal-line semimetal. In contrast,
Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic
fields and a strong decrease of electrical resistivity at low temperatures
probably due to weak antilocalization. Hall conductivity data indicated that
the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but
also high-mobility electron carriers in proximity of the Dirac point.
Electrical resistivity of Pd-doped CaAgP also showed a superconducting
transition with onset temperature of 1.7-1.8 K.
