  Large-area growth of continuous transition metal dichalcogenides (TMDCs)
layers is a prerequisite to transfer their exceptional electronic and optical
properties into practical devices. It still represents an open issue nowadays.
Electric and magnetic doping of TMDC layers to develop basic devices such as
p-n junctions or diluted magnetic semiconductors for spintronic applications
are also an important field of investigation. Here, we have developed two
different techniques to grow MoSe$_2$ mono- and multi-layers on SiO$_2$/Si
substrates over large areas. First, we co-deposited Mo and Se atoms on
SiO$_2$/Si by molecular beam epitaxy in the van der Waals regime to obtain
continuous MoSe$_2$ monolayers over 1 cm$^2$. To grow MoSe$_2$ multilayers, we
then used the van der Waals solid phase epitaxy which consists in depositing an
amorphous Se/Mo bilayer on top of a co-deposited MoSe$_2$ monolayer which
serves as a van der Waals growth template. By annealing, we obtained continuous
MoSe$_2$ multilayers over 1 cm$^2$. Moreover, by inserting a thin layer of Mn
in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in
MoSe$_2$ bilayers.
