  ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B
buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires
or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111]
oriented cubic mixed with [0001] oriented hexagonal regions are obtained on
(111)B substrates. Most of the NWs are perpendicular to the surface in the last
case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as
demonstrated by transmission electron microscopy, energy filtered TEM and high
angle annular dark field scanning TEM measurements.
