  Applications of magnetic memory devices greatly benefit from ultra-fast,
low-power switching. Here we propose how this can be achieved efficiently in a
nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane
picosecond-range magnetic field pulses. Our detailed micromagnetic simulations,
supported by analytical results, yield the parameter space where inertial
switching and relaxation-free switching can be achieved in the system. We
furthermore discuss the advantages of dynamic switching in synthetic
antiferromagnets and, specifically, their relatively low-power switching as
compared to that in single ferromagnetic particles. Finally, we show how
excitation of spin-waves in the system can be used to significantly reduce the
post-switching spin oscillations for practical device geometries.
