  The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling
Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel
junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende
semiconductor and a normal metal. We develop a theoretical model for describing
the dependence of a thermally induced tunneling current across the MTJ on the
in-plane orientation of the magnetization in the ferromagnetic layer. The model
accounts for the specific Bychkov-Rashba and Dresselhaus spin-orbit
interactions present in these systems, which are responsible for the $C_{2v}$
symmetry we find in the TAMT and the TASS.
