  Solution processed polymers are at the core of organic electronics.
Polyradicals (polymers in which each repeating unit contains an unpaired spin)
are unique alternatives to their p-conjugated, semiconducting counterparts.
Unique of polyradicals are tunable charge states localized at their repeating
units, which enable electrically switchable charge transport regimes.
Tremendous efforts were focused on polyradical memristors and batteries.
Notwithstanding recent progress in doping, polyradical field-effect transistors
(PR-FETs) have not been reported. Here, we show that vertical architectures,
with drain-source contacts sandwiching the active layer of a strongly
correlated 6-oxoverdazyl polyradical, leads to on/off ratios higher than 10+3
in p-type PR-FETs. Hole injection occurs via contact doping by tunable charge
states at the polyradical-electrode interface. Transparent and flexible PR-FETs
are also reported. PR-FETs are superior to existing organic FETs as they
combine memristor and transistor functions in one mem-transistor device,
offering a unique potential for the circuital simplification of organic
electronics.
