  Graphene on ferroelectric structures can be promising candidates for advanced
field effect transistors, modulators and electrical transducers, providing that
research of their electrotransport and electromechanical performances can be
lifted up from mostly empirical to prognostic theoretical level.Recently we
have shown that alternating piezoelectric displacement of the ferroelectric
domain surfaces can lead to the alternate stretching and separation of graphene
areas at the steps between elongated and contracted domains, and the
conductance of graphene channel can be increased essentially at room
temperature, because electrons in the stretched section scatter on acoustic
phonons.The piezoelectric mechanism of graphene conductance control requires
systematic studies of the ambient condition impact on its manifestations. This
theoretical work studies in details the temperature behavior of the graphene
conductance changes induced by piezoelectric effect in a ferroelectric
substrate with domain stripes.We revealed the possibility to control graphene
conductance (that can change up to 100 times for PZT ferroelectric substrate)
by tuning the ambient temperature from low values to the critical one for given
gate voltage and channel length.Also we demonstrate the possibility to control
graphene conductance changes up to one hundred of times by tuning the gate
voltage from 0 to the critical value at a given temperature and channel length.
Obtained results can be open the way towards graphene on ferroelectric
applications in piezoresistive memories operating in a wide temperature range.
