  Te is a naturally p-doped semiconductor with a chiral structure, where an
electrical current causes the conduction electrons to become spin polarized
parallel to the transport direction. In this paper, we present a comprehensive
theoretical study of this effect by employing density functional theory (DFT)
combined with the non-equilibrium Green's functions (NEGF) technique for
quantum transport. We suggest that the spin polarization can quantitatively be
estimated in terms of two complementary quantities, namely the non-equilibrium
magnetic moments and the spin current density. The calculated magnetic moments
are directly compared with the values from previous theoretical studies
obtaining overall consistent results. On the other hand, the inspection of the
spin current density provides insights of the magnetotransport properties of
the material. Specifically, we predict that the resistance along a Te wire
changes when an external magnetic field is applied parallel or antiparallel to
the charge current direction. The computed magnetoresistance is however quite
small (~ 0.025%). Finally, we show that the description of the current-induced
spin polarization in terms of the spin current establishes a straightforward
connection with the phenomenon called chiral-induced spin selectivity, recently
observed in several nano-junctions.
