  We present a microscopic study on the impact of doping on the carrier
dynamics in graphene, in particular focusing on its influence on the
technologically relevant carrier multiplication in realistic, doped graphene
samples. Treating the time- and momentum-resolved carrier-light,
carrier-carrier, and carrier-phonon interactions on the same microscopic
footing, the appearance of Auger-induced carrier multiplication up to a Fermi
level of 300 meV is revealed. Furthermore, we show that doping favors the
so-called hot carrier multiplication occurring within one band. Our results are
directly compared to recent time-resolved ARPES measurements and exhibit an
excellent agreement on the temporal evolution of the hot carrier multiplication
for n- and p-doped graphene. The gained insights shed light on the ultrafast
carrier dynamics in realistic, doped graphene samples
