  Theoretical and experimental studies of intrinsic Josephson junctions that
naturally occur in high-Tc superconducting Bi2Sr2CaCu2O8+{\delta} (Bi-2212)
have demonstrated their potential for novel types of compact devices for the
generation and sensing of electromagnetic radiation in the THz range. Here, we
show that the THz-on-a-chip concept may be realized in liquid phase
epitaxial-grown (LPE) thick Bi-2212 films. We have grown {\mu}m-thick Bi-2212
LPE films on MgO substrates. These films display excellent c-axis alignment and
single crystal grains of about 650x150 {\mu}m2 in size. A branched
current-voltage characteristic was clearly observed in c-axis transport, which
is a clear signature of underdamped intrinsic Josephson junctions, and a
prerequisite for THz-generation. We discuss LPE growth conditions allowing
improvement of the structural quality and superconducting properties of Bi-2212
films for THz applications.
