  The effect of the uniaxial strain on the current-voltage characteristic of a
typical armchair graphene-nanoribbon-hBN heterostructure device is simulated
numerically by employing the nearest-neighbor tight-binding model and the
non-equilibrium Green's function formalism. Simulations clearly reveal the
following notable dependencies: (i) the strain invariably reduces the current;
(ii) the strain applied in the armchair direction markedly widens the main peak
of the current over a larger region of the bias voltage compared with the
unstrained state; (iii) the current decreases faster when the strain is applied
in the armchair rather than the zigzag direction.
