  We report the properties of molecular beam epitaxy deposited AlBN thin films
on a recently developed epitaxial nitride metal electrode Nb2N. While a control
AlN thin film exhibits standard capacitive behavior, distinct ferroelectric
switching is observed in the AlBN films with increasing Boron mole fraction.
The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45
MV/cm in these films are smaller than those recently reported on films
deposited by sputtering, due to incomplete wake-up, limited by current leakage.
Because AlBN preserves the ultrawide energy bandgap of AlN compared to other
nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially
integrated with GaN and AlN semiconductors, its development will enable several
opportunities for unique electronic, photonic, and memory devices.
