  We investigate the high magnetic field regime of wide quantum wells (WQW) for
the case of a many valley host semiconductor. The complete system is described
within a modified Landauer-Buettiker formalism and we demonstrate that a
parallel contribution of two electron systems in different valleys of the band
structure can lead to an edge channel related non-local behaviour even in the
3D-regime. From the obtained general result we derive also a simplified model
which applies for the case of much different dissipation. It represents the
most dissipative system by an Ohmic resistor network and the less dissipative
system by an EC-system.
