  We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGe
quantum well, which emerges only when both perpendicular and in-plane magnetic
fields are present. The ratio of resistances, measured along and perpendicular
to the in-plane field, can exceed $3\times 10^4$. The anisotropy occurs in a
wide range of filling factors where it is determined {\em primarily} by the
tilt angle. The lack of significant anisotropy without an in-plane field, easy
tunability, and persistence to higher temperatures and filling factors set this
anisotropy apart from nematic phases in GaAs/AlGaAs.
