  A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor
(BCPT) is explored using 2-D simulations. Different metal work-function
electrodes are used to induce n- and p-type charge plasma layers on undoped SOI
to form the emitter, base and collector regions of a lateral NPN transistor.
Electrical characteristics of the proposed device are simulated and compared
with that of a conventionally doped lateral bipolar junction transistor with
identical dimensions. Our simulation results demonstrate that the BCPT concept
will help us realize a superior bipolar transistor in terms of a high current
gain compared to a conventional BJT. This BCPT concept is suitable in
overcoming doping issues such as dopant activation and high-thermal budgets
which are serious issues in ultra thin SOI structures.
