  We investigate temperature dependent transport properties of two-dimensional
p-GaAs systems taking into account both hole-phonon and hole-impurity
scattering effects. By analyzing the hole mobility data of p-GaAs in the
temperature range 10 K$<T<$100 K, we estimate the value of the appropriate
deformation potential for hole-phonon coupling. Due to the interplay between
hole-phonon and hole-impurity scattering the calculated temperature-dependent
resistivity shows interesting nonmonotonic behavior. In particular, we find
that there is a temperature range (typically 2 K$<T<$10 K) in which the
calculated resistivity becomes independent of temperature due to a subtle
cancellation between the temperature dependent resistive scattering
contributions arising from impurities and phonons. This resistivity saturation
regime appears at low carrier densities when the increasing resistivity due to
phonon scattering compensates for the decreasing resistivity due to the
nondegeneracy effect. This temperature-independent flat resistivity regime is
experimentally accessible and may have already been observed in a recent
experiment.
