  The value of the scaling parameter $E_{\text{eff}}$ of the temperature
dependence for current generated in silicon bulk is investigated for highly
irradiated devices.
  Measurements of devices irradiated to fluences above $1 \times 10^{15}
n_{\text{eq}} \text{cm}^{-2} $ have shown a different temperature scaling
behaviour than devices irradiated to lower fluences. This paper presents the
determination of the parameter $E_{\text{eff}}$ for diodes irradiated with
protons up to fluences of $3 \times 10^{15} n_{\text{eq}} \text{cm}^{-2}$ in
the bias range from $0$V to $1000$V at temperatures from $-36 ^{\circ}\text{C}$
to $0 ^{\circ}\text{C}$ at different stages of annealing. It is shown that
$E_{\text{eff}}$ for highly irradiated devices depends on the applied electric
field: below depletion voltage, $E_{\text{eff}}$ is observed to have a lower
value than above depletion voltage
