  In this paper, we propose the application of a Dual Material Gate (DMG) in a
Tunnel Field Effect Transistor (TFET) to simultaneously optimize the
on-current, the off-current and the threshold voltage, and also improve the
average subthreshold slope, the nature of the output characteristics and the
immunity against the DIBL effects. We demonstrate that if appropriate
work-functions are chosen for the gate materials on the source side and the
drain side, the tunnel field effect transistor shows a significantly improved
performance. We apply the technique of DMG in a Strained Double Gate Tunnel
Field Effect Transistor with a high-k gate dielectric to show an overall
improvement in the characteristics of the device along with achieving a good
on-current and an excellent average subthreshold slope. The results show that
the DMG technique can be applied to TFETs with different channel materials,
channel lengths, gate-oxide materials, gate-oxide thicknesses and power supply
levels to achieve significant gains in the overall device characteristics.
