  The transferred-electron oscillator (TEO) is a device used in microwave
applications that utilizes the negative differential mobility (NDM) effect to
generate continuous oscillations. Recently, NDM was observed in intrinsic
single-crystalline chemical vapor deposition (SC-CVD) diamond. The occurrence
was explained by the electron repopulation between its different conduction
band valleys. This paper presents the results of constructing a diamond TEO
based on the NDM effect. A series of experiments has been performed for varying
voltages, temperatures and resonator parameters on three SC-CVD diamond samples
of different thicknesses. For the temperature range 90-300 K, we observe
transferred-electron oscillations in diamond.
