  A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was
successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs
hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously
established by the observation of clear hysteresis loops both in direct
magnetization measurements and in the anomalous Hall effect, with Curie
temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well
with the existing models of carrier-induced ferromagnetism.
