  Employing the Landauer-Buttiker formula we investigate the spin and valley
dependence of Seebeck effect in low-buckled Dirac materials (LBDMs), whose band
structure are modulated by local application of a gate voltage and off-resonant
circularly polarized light. We calculate the charge, spin and valley Seebeck
coefficients of an irradiated LBDM as functions of electronic doping, light
intensity and the amount of the electric field in the linear regime. Our
calculation reveal that all Seebeck coefficients always shows an odd features
with respect to the chemical potential. Moreover, we show that, due to the
strong spin-orbit coupling in the LBDMs, the induced thermovoltage in the
irradiated LBDMs is spin polarized, and can also become valley polarized if the
gate voltage is applied too. It is also found that the valley (spin)
polarization of the induced thermovoltage could be inverted by reversing the
circular polarization of light or reversing the direction the electric field
(only by reversing the circular polarization of light).
