  We propose a spintronic metal oxide semiconductor field effect transistor
(spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel
and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only
one of the spin sub-bands and feature complete spin polarization at finite
temperature. We present an analytical model of the device and comment the
properties relevant for devices applications. Our results boost SGS as a new
paradigm for the spin MOSFET concept.
