  The design of a 1 micrometer gate length depletion-mode InSb quantum-well
field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has
been optimized using a quantum corrected self-consistent Schrodinger-Poisson
(QCSP) and two dimensional drift-diffusion model. The model predicts a very
high electron mobility of 4.42 m2V-1s-1 at Vg= 0V, a small pinch off gate
voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of 4.94 S/mm
and a drain current density of more than 6.04 A/mm. A short-circuit
current-gain cut-off frequency (fT) of 374 GHz and a maximum oscillation
frequency (fmax) of 645 GHz are predicted for the device. These characteristics
make the device a potential candidate for low power, high-speed logic
electronic device applications.
