  Cubic silicon carbide is an excellent platform for integration of defect
qubits into established wafer scale device architectures for quantum
information and sensing applications, where divacancy qubit, that is similar to
the negatively charged nitrogen-vacancy (NV) center in diamond, has favorable
coherence properties. We demonstrate by means of density functional theory
calculations that divacancy in 3C SiC has superior spin-stress coupling
parameters and stress sensitivity for nanoscale, quantum enhanced photonic,
optoelectronic and optomechanical devices.
