  The Berry curvature dipole is a physical quantity that is expected to allow
various quantum geometrical phenomena in a range of solid-state systems.
Monolayer transition metal dichalcogenides provide an exceptional platform to
modulate and investigate the Berry curvature dipole through strain. Here we
theoretically demonstrate and experimentally verify for monolayer MoS$_\rm{2}$
the generation of valley orbital magnetization as a response to an in-plane
electric field due to the Berry curvature dipole. The measured valley orbital
magnetization shows excellent agreement with the calculated Berry curvature
dipole which can be controlled by the magnitude and direction of strain. Our
results show that the Berry curvature dipole acts as an effective magnetic
field in current-carrying systems, providing a novel route to generate
magnetization.
