  In this article, we present a configurable field-effect transistor (FET),
where not only polarity (n- and p-type), but the conduction mechanism of a FET
can also be configured dynamically. As a result, we can have both types of
devices, high-performance MOSFET and low-power TFET, for computational and
power efficient system on chip (SoC) products. The calibrated 3D-TCAD
simulation results validate characteristics and functionalities of the
configurable FET, and showed good consistency with the static conventional
MOSFET (or TFET).
