  High-speed Pockels modulation and second-order nonlinearities are key
components in optical systems, but CMOS-compatible platforms like silicon and
silicon nitride lack these capabilities. Micro-transfer printing of thin-film
lithium niobate offers a solution, but suspending large areas of thin films for
long interaction lengths and high-Q resonators is challenging, resulting in a
low transfer yield. We present a new source preparation method that enables
reliable transfer printing of thin-film lithium niobate. We demonstrate its
versatility by successfully applying it to gallium phosphide and silicon, and
provide an estimate of the transfer yield by subsequently printing 25 lithium
niobate films without fail.
