  Transistors based on III-V semiconductor materials have been used for a
variety of analog and high frequency applications driven by the high electron
mobilities in III-V materials. On the other hand, the hole mobility in III-V
materials has always lagged compared to group-IV semiconductors such as silicon
and germanium. In this paper we explore the used of strain and heterostructure
design guided by bandstructure modeling to enhance the hole mobility in III-V
materials. Parameters such as strain, valence band offset, effective masses and
splitting between the light and heavy hole bands that are important for
optimizing hole transport are measured quantitatively using various
experimental techniques. A peak Hall mobility for the holes of 960cm2/Vs is
demonstrated and the high hole mobility is maintained even at high sheet
charge.
