  The electronic transport properties of a highly hydrogen-substituted
1111-type SmFeAsO epitaxial film with high critical-temperature (Tc = 45 K)
were investigated under high magnetic fields. By using a single-turn magnet
generating up to 130 T, we clarified that the upper critical field ({\mu}0Hc2)
of SmFeAsO0.65H0.35 is 120 T at the nearly low-temperature limit of 2.2 K for
{\mu}0H || ab. The angular dependence of {\mu}0Hc2 revealed that the
anisotropic parameter ({\gamma}) around Tc is ~2, which is comparable with that
of a practical candidate 122-type BaFe2As2 with lower Tc and much smaller than
that of F-substituted SmFeAsO. The small {\gamma} mainly originates from the
high hydrogen incorporation. The extremely high {\mu}0Hc2 and small {\gamma},
together with the high Tc and high critical current density, suggest that
SmFeAsO1-xHx has high potential for the superconducting electromagnets and
cables.
