  Memristive systems emerge as strong candidates for the implementation of
Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as
they can mimic the electrical analog behavior or biological synapses. In
addition, complementary functionalities such as memcapacitance could
significantly improve the performance of bio-inspired devices in key issues
such as energy consumption. However, the physics of mem-systems is not fully
understood so far, hampering their large-scale implementation in devices.
Perovskites that undergo topotactic transitions and redox reactions show
improved performance as mem-systems, compared to standard perovskites. In this
paper we analyze different strategies to optimize the multi-mem behavior
(memristive and memcapacitive) of topotactic redox
La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on
Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from
amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and
stimulated either with voltage or current pulses. We found that an optimum
memory response is found for epitaxial (110) LSMCO stimulated with current
pulses. Under these conditions, the system efficiently exchanges oxygen with
the environment minimizing, at the same time, self-heating effects that trigger
nanostructural and chemical changes which could affect the device integrity and
performance. Our work contributes to pave the way for the integration of
LSMCO-based devices in cross-bar arrays, in order to exploit their memristive
and memcapacitive properties for the development of neuromorphic or in-memory
computing devices
