  Y3Fe5O12 (YIG) is a promising candidate for spin wave devices. In the thin
film devices, the interface between YIG and substrate may play important roles
in determining the device properties. Here, we use spherical
aberration-corrected scanning electron microscopy and spectroscopy to study the
atomic arrangement, chemistry and electronic structure of the YIG/Gd3Ga5O12
(GGG) interface. We find that the chemical bonding of the interface is
FeO-GdGaO and the interface remains sharp in both atomic and electronic
structures. These results provide necessary information for understanding the
properties of interface and also for atomistic calculation.
