  Transition metal dichalcogenides (TMDs) attract significant attention due to
their exceptional optical, excitonic, mechanical, and electronic properties.
Nanostructured multilayer TMDs were recently shown to be highly promising for
nanophotonic applications, as motivated by their exceptionally high refractive
indexes and optical anisotropy. Here, we extend this vision to more
sophisticated structures, such as periodic arrays of nanodisks and nanoholes,
as well as proof-of-concept waveguides and resonators. We specifically focus on
various advanced nanofabrication strategies, including careful selection of
resists for electron beam lithography and etching methods. The specific
materials studied here include semiconducting WS$_2$, in-plane anisotropic
ReS$_2$, and metallic TaSe$_2$, TaS$_2$ and NbSe$_2$. The resulting
nanostructures can potentially impact several nanophotonic and optoelectronic
areas, including high-index nanophotonics, plasmonics and on-chip optical
circuits. The knowledge of TMD material-dependent nanofabrication parameters
developed here will help broaden the scope of future applications of these
materials in all-TMD nanophotonics.
