  Silicene has introduced itself as an outstanding novel material, which seeks
its meritorious place among common spintronic devices like Cu and Ag. In this
work, photogalvanic effect in silicene is studied within the semi-classical
approach and beyond Dirac point approximation. Normal electric field plays the
role of effective pseudo-magnetic field which breaks the inversion symmetry and
splits the conduction and valence bands. The interplay between this external
field and intrinsic spin-orbit coupling provides spin-valley locking in
silicene. Spin-valley locking in silicene makes this material superior to its
carbon counterpart, graphene. Since the absorption of the polarized photons is
not equivalent at both of the valleys, spin-valley locking leads to a
spin-polarized photocurrent injection.
