  Monolithic pixel detectors combine readout electronics and sensor in a single
entity of silicon, which simplifies the production procedure and lowers the
material budget compared to conventional hybrid pixel detector concepts.
Benefiting from the advances in commercial CMOS processes towards large biasing
voltage capabilities and the increasing availability of high-resistivity
substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope
with the high-rate and high-radiation environments faced in modern high-energy
physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development
line designed in 180 nm TowerSemicondutor technology, which features a large
scale (2 x 2) cm$^2$ chip divided into (512 x 512) pixels with a pitch of (33 x
33) um$^2$. All in-pixel electronics are separated from its small collection
electrode and process modifications are implemented to improve charge
collection efficiency especially after irradiation. The latest laboratory
measurements and investigations of a threshold variation observed for
TJ-Monopix2 in typical operating conditions are presented.
