  We show that bulk free carriers in topologically trivial multi-valley
insulators with non-vanishing Berry curvature give rise to low-dissipation edge
currents, which are squeezed within a distance of the order of the valley
diffusion length from the edge. This happens even in the absence of edge states
[topological (gapless) or otherwise], and when the bulk equilibrium carrier
concentration is thermally activated across the gap. Physically, the squeezed
edge current arises from the spatially inhomogeneous orbital magnetization that
develops from valley-density accumulation near the edge. While this current
possesses neither topology nor symmetry protection and, as a result, is not
immune to dissipation, in clean enough devices it can mimic low-loss ballistic
transport.
