  InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have
been experimentally demonstrated by top-down approach. The nanowire
size-dependent transport properties have been systematically investigated. It
is found that reducing nanowire dimension leads to higher on-current,
transconductance and effective mobility due to stronger quantum confinement and
the volume inversion effect. TCAD quantum mechanical simulation has been
carried out to study the inversion charge distribution inside the nanowires.
Volume inversion effect appears at a larger dimension for InGaAs nanowire
MOSFET than its Si counterpart.
