  We have studied the magnetization reversal dynamics of FeNi/Al$\_2$O$\_3$/Co
magnetic tunnel junctions deposited on step-bunched Si substrates using
magneto-optical Kerr effect and time-resolved x-ray photoelectron emission
microscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM).
Different reversal mechanisms have been found depending on the substrate miscut
angle. Larger terraces (smaller miscut angles) lead to a higher nucleation
density and stronger domain wall pinning. The width of domain walls with
respect to the size of the terraces seems to play an important role in the
reversal. We used the element selectivity of XMCD-PEEM to reveal the strong
influence of the stray field of domain walls in the hard magnetic layer on the
magnetic switching of the soft magnetic layer.
