  We use ultra-high vacuum chemical vapor deposition to grow polycrystalline
silicon carbide (SiC) on c-plane sapphire wafers which are then annealed
between 1250 and 1450{\deg}C in vacuum to create epitaxial multilayer graphene
(MLG). Despite the surface roughness and small domain size of the
polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC
prior to graphene growth, a reduction of the Raman defect band is observed in
the final MLG. The graphene formed on polished SiC films also demonstrates
significantly more ordered layer-by-layer growth and increased carrier mobility
for the same carrier density as the non-polished samples.
