  The use of ensemble Monte Carlo (EMC) methods for the simulation of transport
in semiconductor devices has become extensive over the past few decades. This
method allows for simulation utilizing particles while addressing the full
physics within the device, leaving the computational difficulties to the
computer. More recently, the study of quantum mechanical effects within the
devices, effects which also strongly affect the carrier transport itself, have
become important. While particles have continued to be useful in quantum
simulations using Wigner functions, interest in analytical solutions based upon
the non-equilibrium Green's functions (NEGF) have become of greater interest in
device simulation. While NEGF has been adopted by many commercial
semiconductor, there remains considerable computational difficulty in this
approach. Here, a particle approach to NEGF is discussed, and preliminary
results presented illustrating the computational efficiency that remains with
the use of particles. This approach adopts the natural basis functions for use
in a high electric field and the preliminary results are obtained for quantum
transport in Si at 300 K. This approach appears to offer significant advantages
for the use of NEGF.
