  We investigate topological phases of bilayer graphene subject to
antiferromagnetic exchange field, interlayer bias, and irradiated by light. We
discover that at finite bias and light intensity the system transitions into a
previously unknown spin-valley polarized quantum anomalous Hall (SVP-QAH)
insulator state, for which the subsystem of one spin is a valley Hall
topological insulator (TI) and that of the other spin is a QAH insulator. We
assess the TI phases occurring in the system by analytically calculating the
spin-valley dependent Chern number, and characterize them by considering edge
states in a nanoribbon. We demonstrate that the SVP-QAH edge states lead to a
unique spin rectification effect in a domain wall. Along the phase boundary, we
observe a bulk half-metal state with Berry's phase of 2\pi.
