  We have demonstrated a technique capable of in-line measurement of dielectric
constant of low-k interconnect films on patterned wafers utilizing a test key
of ~50x50 \mu m in size. The test key consists of a low-k film backed by a Cu
grid with >50% metal pattern density and <250 nm pitch, which is fully
compatible with the existing dual-damascene interconnect manufacturing
processes. The technique is based on a near-field scanned microwave probe and
is noncontact, noninvasive, and requires no electrical contact to or grounding
of the wafer under test. It yields <0.3% precision and 2% accuracy for the film
dielectric constant.
