  Compton telescopes based on semiconductor technologies are being developed to
explore the gamma-ray universe in an energy band 0.1--20 MeV, which is not well
covered by the present or near-future gamma-ray telescopes. The key feature of
such Compton telescopes is the high energy resolution that is crucial for high
angular resolution and high background rejection capability. The energy
resolution around 1 keV is required to approach physical limit of the angular
resolution due to Doppler broadening. We have developed a low noise front-end
ASIC (Application-Specific Integrated Circuit), VA32TA, to realize this goal
for the readout of Double-sided Silicon Strip Detector (DSSD) and Cadmium
Telluride (CdTe) pixel detector which are essential elements of the
semiconductor Compton telescope. We report on the design and test results of
the VA32TA. We have reached an energy resolution of 1.3 keV (FWHM) for 60 keV
and 122 keV at 0 degree C with a DSSD and 1.7 keV (FWHM) with a CdTe detector.
