  In a system consisting of two different lattices, the structural stability is
ensured when an epitaxial relationship occurs between them and allows the
system to retain the stress, avoiding the formation of a polycristalline film.
The phenomenon occurs if the film thickness does not exceed a critical value.
Here we show that, in spite of its orthorombic structure, a 14nm-thick NiSi
layer can three-dimensionally (3D) adapt to the cubic Si lattice by forming
transrotational domains. Each domain arises by the continuous bending of the
NiSi lattice, maintaining a close relationship with the substrate structure.
The presence of transrotational domains does not cause a roughening of the
layer but instead it improves the structural and electrical stability of the
silicide in comparison with a 24nm-thick layer formed using the same annealing
process. These results have relevant implications on thickness scaling of NiSi
layers currently used as metallizations of electronic devices.
