  High-speed back-illuminated uni-traveling-carrier photodiodes at 1064nm were
demonstrated grown on InP with 3dB bandwidth of 17.8 GHz at -5 V bias, using
InGaAsP as absorption layer. PDs with 40um diameter deliver RF output power
levels as high as 19.5 dBm at 13 GHz. This structure can achieve low dark
current density of 10 nA per cm2 at -5V bias and quantum efficiency of 45.2% at
1064nm. An analytical model based on S-parameter fitting was built to extract
parameter to access the bandwidth limiting factors.
