  Domain walls in interacting electronic systems can have distinct localized
states, which often govern physical properties and may lead to unprecedented
functionalities and novel devices. However, electronic states within domain
walls themselves have not been clearly identified and understood for strongly
correlated electron systems. Here, we resolve the electronic states localized
on domain walls in a Mott-charge-density-wave(CDW) insulator 1T-TaS2 using
scanning tunneling spectroscopy. We establish that the domain wall state
decomposes into two nonconducting states located at the center of domain walls
and edges of domains. Theoretical calculations reveal their atomistic origin as
the local reconstruction of domain walls under the strong influence of electron
correlation. Our results introduce a concept for the domain wall electronic
property, the wall's own internal degrees of freedom, which is potentially
related to the controllability of domain wall electronic properties.
