  In this work, novel, high-throughput metrology methods are used to perform a
detailed performance loss analysis of approximately 400 industrial crystalline
silicon solar cells, all coming from the same production line. The
characterization sequence includes a non-destructive transfer length method
(TLM) measurement technique featuring circular TLM structures hidden within the
busbar region of the cells. It also includes a very fast external quantum
efficiency and reflectance measurement technique. More traditional
measurements, like illuminated current-voltage, Suns-VOC, and photoluminescence
imaging are also used to carry out the loss analysis. The variance of the
individual loss parameters and their impact on cell performance are
investigated and quantified for this large group of industrial solar cells.
Some important correlations between the measured loss parameters are found. The
nature of these distributions and correlations provide important insights about
loss mechanisms in a cell and help prioritize efforts to optimize the
performance of the production line.
