  The extraordinary electronic and optical properties of the
crystal-to-amorphous transition in phase-change materials led to important
developments in memory applications. A promising outlook is offered by
nanoscaling such phase-change structures. Following this research line, we
study the interband optical transmission spectra of nanoscaled
GeTe/Sb$_2$Te$_3$ chalcogenide superlattice films. We determine, for films with
varying stacking sequence and growth methods, the density and scattering time
of the free electrons, and the characteristics of the valence-to-conduction
transition. It is found that the free electron density decreases with
increasing GeTe content, for sub-layer thickness below $\sim$3 nm. A simple
band model analysis suggests that GeTe and Sb$_2$Te$_3$ layers mix, forming a
standard GeSbTe alloy buffer layer. We show that it is possible to control the
electronic transport properties of the films by properly choosing the
deposition layer thickness and we derive a model for arbitrary film stacks.
