  Systematic analysis of the planar resistivity, Hall effect and cotangent of
the Hall angle for the electron-doped cuprates reveals underlying Fermi-liquid
behavior even deep in the antiferromagnetic part of the phase diagram. The
transport scattering rate exhibits a quadratic temperature dependence, and is
nearly independent of doping, compound and carrier type (electrons vs. holes),
and hence universal. Our analysis moreover indicates that the material-specific
resistivity upturn at low temperatures and low doping has the same origin in
both electron- and hole-doped cuprates.
