  In this contribution we argue that the main discrepancies between model
calculations and experimental data for leakage current after hadron irradiation
could be explained considering the contributions of primary defects in silicon:
vacancy, interstitial and Si_FFCD defect. The source of discrepancies between
data and previous modelling was tentatively attributed to the Si_FFCD defect.
Vacancies and interstitials have a major contribution to the current short time
after irradiation. If these hypotheses are correct, thus, in conditions of
continuous long time irradiation, as e.g. LHC and its upgrades in energy and
luminosity, S-LHC and V-LHC respectively, these contributions will represent a
major problem.
