  Redox-based memristive devices are among the alternatives for the next
generation of non volatile memories, but also candidates to emulate the
behavior of synapses in neuromorphic computing devices. It is nowadays well
established that the motion of oxygen vacancies (OV) at the nanoscale is the
key mechanism to reversibly switch metal/insulator/metal structures from
insulating to conducting, i.e. to accomplish the resistive switching effect.
The control of OV dynamics has a direct effect on the resistance changes, and
therefore on different figures of memristive devices, such as switching speed,
retention, endurance or energy consumption. Advances in this direction demand
not only experimental techniques that allow for measurements of OV dynamics,
but also of theoretical studies that shed light on the involved mechanisms.
Along this goal, we analize the OV dynamics in redox interfaces formed when an
oxidizable metallic electrode is in contact with the insulating oxide. We show
how the transfer of OV can be manipulated by using different electrical stimuli
protocols to optimize device figures such as the ON/OFF ratio or the energy
dissipation linked to the writing process. Analytical expressions for attained
resistance values, including the high and low resistance states are derived in
terms of total transferred OV in a nanoscale region of the interface. Our
predictions are validated with experiments performed in
Ti/La$_{1/3}$Ca$_{2/3}$MnO$_{3}$ redox memristive devices.
