  The effect of carrier localization due to electron-electron interaction in
anomalous Hall effect is elusive and there are contradictory results in the
literature. To address the issue, we report here the detailed transport study
including the Hall measurements on $\beta$-Mn type cubic compound
Co$_7$Zn$_7$Mn$_6$ with chiral crystal structure, which lacks global mirror
symmetry. The alloy orders magnetically below $T_c$ = 204 K, and reported to
show spin glass state at low temperature. The longitudinal resistivity
($\rho_{xx}$) shows a pronounced upturn below $T_{min}$ = 75 K, which is found
to be associated with carrier localization due to quantum interference effect.
The upturn in $\rho_{xx}$ shows a $T^{1/2}$ dependence and it is practically
insensitive to the externally applied magnetic field, which indicate that
electron-electron interaction is primarily responsible for the low-$T$ upturn.
The studied sample shows considerable value of anomalous Hall effect below
$T_c$. We found that the localization effect is present in the ordinary Hall
coefficient ($R_0$), but we failed to observe any signature of localization in
the anomalous Hall resistivity or conductivity. The absence of localization
effect in the anomalous Hall effect in Co$_7$Zn$_7$Mn$_6$ may be due to large
carrier density, and it warrants further theoretical investigations,
particularly with systems having broken mirror symmetry.
