  The emergence of halide perovskites in photovoltaics has diversified the
research on this material family and extended their application towards several
fields in the optoelectronics, such as photo- and ionizing-radiation-detectors.
One of the most basic characterization protocols consist on measuring the dark
current-voltage (J-V) curve of symmetrically contacted samples for identifying
the different regimes of space-charge-limited current (SCLC). Customarily,
J=C*V^n curves indicate the Mott-Gurney law when n=2, or the Child-Langmuir
ballistic regime of SCLC when n=3/2. The latter can be often found in
perovskite samples. In this work, we start by discussing the interpretation of
currents proportional to V^(3/2) in relation to the masking effect of the dual
electronic-ionic conductivity in halide perovskites. However, we do not discard
the actual occurrence of SCLC transport with ballistic-like trends. For those
cases, we introduce the models of: quasi-ballistic velocity-dependent
dissipation (QvD) and the ballistic-like voltage-dependent mobility (BVM)
regime of SCLC. The QvD model is shown to better describe electronic kinetics,
whereas the BVM model is revealed as suitable for describing electronic or
ionic kinetics in halide perovskites. The proposed formulations can be used as
characterization tools for the evaluation of effective mobilities, charge
carrier concentrations and times-of-flight from J-V curves and impedance
spectroscopy spectra.
