  Holes confined in semiconductor nanostructures realize qubits where the
quantum mechanical spin is strongly mixed with the quantum orbital angular
momentum. The remarkable spin-orbit coupling allows for fast all electrical
manipulation of such qubits. We study an idealization of a CMOS device where
the hole is strongly confined in one direction (thin film geometry), while it
is allowed to move more extensively along a one-dimensional channel. Static
electric bias and $ac$ electrical driving are applied by metallic gates
arranged along the channel. In quantum devices based on materials with a bulk
inversion symmetry, such as silicon or germanium, there exists different
possible spin-orbit coupling based mechanisms for qubit manipulation. One of
them, the $g$-tensor magnetic resonance ($g$-TMR), relies on the dependence of
the effective $g$-factors on the electrical confinement. In this configuration
the hole is driven by an $ac$ field parallel to the static electric field and
perpendicular to the channel (transverse driving). Another mechanism, which we
refer to here as iso-Zeeman electric dipole spin resonance (IZ-EDSR), is due to
the Rashba spin-orbit coupling that leads to an effective time-dependent
magnetic field experienced by the pseudo-spin oscillating along the quantum
channel (longitudinal driving). We compare these two modes of operation and we
describe the conditions where the magnitudes of the Rabi frequencies are the
largest. Different regimes can be attained by electrical tuning where the
coupling to the $ac$ electric field is made either weak or strong...
