  The anisotropic magneto-Peltier effect (AMPE) and anomalous Ettingshausen
effect (AEE) have been investigated in U-shaped Ni thin films of varying
thickness and substrate by means of the lock-in thermography (LIT) method. We
have established a procedure to extract pure AMPE and AEE contributions,
separated from other thermoelectric effects, for ferromagnetic thin films. The
measurements of the magnetic-field-angle $\theta_{\rm H}$ dependence of the LIT
images clearly show that the temperature modulation induced by the AMPE (AEE)
in the Ni films varies with the $\cos 2\theta_{\rm H}$ ($\cos \theta_{\rm H}$)
pattern, confirming the symmetry of the AMPE (AEE). The systematic LIT
measurements using various substrates show that the AMPE-induced temperature
modulation decreases with the increase in thermal conductivity of the
substrates, whereas the AEE-induced temperature modulation is almost
independent of the thermal conductivity, indicating that the heat loss into the
substrates plays an important role in determining the magnitude of the
AMPE-induced temperature modulation in thin films. Our experimental results
were reproduced by numerical calculations based on a two-dimensional finite
element method. These findings provide a platform for investigating the AMPE
and AEE in thin film devices.
