  The circularly polarized electroluminescence (CPEL) from silicon
nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW)
confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under
study as a function of temperature and excitation levels. The CPEL dependences
on the forward current and temperature show the circularly polarized light
emission which appears to be caused by the exciton recombination through the
negative-U dipole boron centers at the Si-QW {\delta}-barriers interface.
