  We demonstrate, for the first time, sputtered PZT as a platform for the
development of Si-based photonic devices such as rings, MZI, and electro-optic
modulators. We report the optimization of PZT on MgO(002) substrate to obtain
highly oriented PZT film oriented towards the (100) plane with a surface
roughness of 2 nm. Si gratings were simulated for TE and TM mode with an
efficiency of -2.2 dB/coupler -3 dB/coupler respectively with a polarization
insensitive efficiency of 50% for both TE and TM mode. Si grating with an
efficiency of around -10 dB/coupler and a 6 dB bandwidth of 30 nm was
fabricated. DC Electro-optic characterization for MZI yielded a spectrum shift
of 71 pm/V at the c-band.
