  3D NAND enables continuous NAND density and cost scaling beyond conventional
2D NAND. However, its poly-Si channel suffers from low mobility, large device
variations, and instability caused by grain boundaries. Here, we overcome these
drawbacks by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO)
channel, which has the advantages of ultra-low OFF current, back-end-of-line
compatibility, higher mobility and better uniformity than poly-Si, and free of
grain boundaries due to the amorphous nature. Ultra-scaled floating-gate (FG)
transistors with a channel length of 60 nm are reported, achieving the highest
ON current of 127 uA/um among all reported a-IGZO-based flash devices for
high-density, low-power, and high-performance 3D NAND applications.
Furthermore, a non-volatile and area-efficient ternary content-addressable
memory (TCAM) with only two a-IGZO FG transistors is experimentally
demonstrated. Array-level simulations using experimentally calibrated models
show that this design achieves at least 240x array-size scalability and
2.7-fold reduction in search energy than 16T-CMOS, 2T2R, and 2FeFET TCAMs.
