  Single crystalline InSb nanosheet is an emerging planar semiconductor
material with potential applications in electronics, infrared optoelectronics,
spintronics and topological quantum computing. Here we report on realization of
a quantum dot device from a single crystalline InSb nanosheet grown by
molecular-beam epitaxy. The device is fabricated from the nanosheet on a
Si/SiO2 substrate and the quantum dot confinement is achieved by top gate
technique. Transport measurements show a series of Coulomb diamonds,
demonstrating that the quantum dot is well defined and highly tunable. Tunable,
gate-defined, planar InSb quantum dots offer a renewed platform for developing
semiconductor-based quantum computation technology.
