  Reconfigurable memristors featuring neural and synaptic functions hold great
potential for neuromorphic circuits by simplifying system architecture, cutting
power consumption, and boosting computational efficiency. Their additive
manufacturing on sustainable substrates offers unique advantages for future
electronics, including low environmental impact. Here, exploiting
structure-property relationship of MoS2 nanoflake-based resistive layer, we
present paper-based, inkjet-printed, reconfigurable memristors. With >90% yield
from a 16x65 device array, our memristors demonstrate robust resistive
switching, with $>10^5$ ON-OFF ratio and <0.5 V operation in non-volatile
state. Through modulation of compliance current, the devices transition into
volatile state, with only 50 pW switching power consumption, rivalling
state-of-the-art metal oxide-based counterparts. We show device recyclability
and stable, reconfigurable operation following disassembly, material collection
and re-fabrication. We further demonstrate synaptic plasticity and neuronal
leaky integrate-and-fire functionality, with disposable applications in smart
packaging and simulated medical image diagnostics. Our work shows a sustainable
pathway towards printable, high-yield, reconfigurable neuromorphic devices,
with minimal environmental footprint.
