  The in-plane anisotropy of resistivity has been investigated for
Ba(Fe$_{1-x}$TM$_{x}$)$_2$As$_2$ (TM-Ba122, TM$=$Cr, Mn, and Co) where the
substitution sites are the same but the doped carriers are different for
different TM elements. The Hall coefficient measurements indicated that hole
carriers are effectively doped by Cr substitution but not by Mn substitution.
It has been found that the resistivity difference $\Delta\rho=\rho_{\rm
b}-\rho_{\rm a}$ in the antiferromagnetic-orthorhombic (AFO) phase of Cr-Ba122
is initially positive but it turns to negative with increasing Cr content,
whereas the positive $\Delta\rho$ monotonically increases with Mn substitution
in Mn-Ba122. In the paramagnetic-tetragonal phase, $\Delta\rho$ is always
positive, but it decreases with substitution in Cr-Ba122, in contrast to the
electron-doped case. These results demonstrate that the resistivity anisotropy
exhibits electron-hole asymmetry in both AFO and nematic phases and that it
depends on the Fermi surface topology whether the carrier scattering results in
a positive or negative $\Delta\rho$.
