  We obtain an effective parametrization of the bulk electronic structure of
InP within the Tight Binding scheme. Using these parameters, we calculate the
electronic structure of InP clusters with the size ranging upto 7.5 nm. The
calculated variations in the electronic structure as a function of the cluster
size is found to be in excellent agreement with experimental results over the
entire range of sizes, establishing the effectiveness and transferability of
the obtained parameter strengths.
