  The hot electron magnetotransport in a spin-valve transistor has been
theoretically explored at finite temperatures. We have explored the parallel
and anti-parallel collector current changing the relative spin orientation of
the ferromagnetic layers at finite temperatures. In this model calculations,
hot electron energy redistribution due to spatial inhomogeneity of Schottky
barrier heights and hot electron spin polarization in the ferromagnetic layer
at finite temperatures have been taken into account. The results of this model
calculations accord with the experimental data semi-quantitative manner. We
therefore suggest that both effects remarked above should be taken into account
substantially when one explores the hot electron magnetotransport in a
spin-valve system transistor at finite temperatures.
