  The application of strain to 2D materials allows manipulating the electronic,
magnetic, and thermoelectric properties. These physical properties are
sensitive to slight variations induced by tensile and compressive strain and to
the uniaxial strain direction. Herein, we take advantage of the reversible
semiconductor-metal transition observed in certain monolayers to propose a
hetero-bilayer device. We propose to pill up phosphorene (layered black
phosphorus) and carbon monosulfide monolayers. In the first, such transition
appears for positive strain, while the second appears for negative strain. Our
first-principle calculations show that depending on the direction of the
applied uniaxial strain; it is possible to achieve reversible control in the
layer that behaves as an electronic conductor while the other layer remains as
a thermal conductor. The described strain-controlled selectivity could be used
in the design of novel devices.
