  Reliable and controllable switches are crucial in nanofluidics and
iontronics. Ion channels in nature serve as a rich source of inspiration due to
their intricate mechanisms modulated by stimuli like pressure, temperature,
chemicals, and voltage. The artificial replication of the properties of these
channels is challenging due to their complex chemistry, limited stability
range, and intricate moving parts, allosterically modulated. Nonetheless, we
can harness some of their gating mechanisms for nanofluidic and iontronic
purposes. This theoretical and computational study explores the use of
electrowetting in hydrophobic nanopores to control their conductance using an
external applied voltage. We employ restrained molecular dynamics to calculate
the free energy required for wetting a model nanopore under different voltages.
Utilizing a simple theory, we generate free energy profiles across a wide
voltage range. We also computed transition rates between conductive and
non-conductive states, showing their voltage dependence and how this behaviour
can impair memory to the system, resembling the memristor behaviour
voltage-gated channels in the brain. These findings offer a promising avenue
for designing and controlling hydrophobic nanopores via electrowetting,
enabling potential applications in neuromorphic iontronics.
