  Superconducting integrated circuit (SIC) is a promising "beyond-CMOS" device
technology enables speed-of-light, nearly lossless communications to advance
cryogenic (4 K or lower) computing. However, the lack of large-area
superconducting IC has hindered the development of scalable practical systems.
Herein, we describe a novel approach to interconnect 16 high-resolution deep UV
(DUV EX4, 248 nm lithography) full reticle circuits to fabricate an extremely
large (88mm X 88 mm) area superconducting integrated circuit (ELASIC). The
fabrication process starts by interconnecting four high-resolution DUV EX4 (22
mm X 22 mm) full reticles using a single large-field (44 mm X 44 mm) I-line
(365 nm lithography) reticle, followed by I-line reticle stitching at the
boundaries of 44 mm X 44 mm fields to fabricate the complete ELASIC field (88
mm X 88 mm). The ELASIC demonstrated a 2X-12X reduction in circuit features and
maintained high-stitched line superconducting critical currents. We examined
quantum flux parametron (QFP) circuits to demonstrate the viability of common
active components used for data buffering and transmission. Considering that no
stitching requirement for high-resolution EX4 DUV reticles is employed, the
present fabrication process has the potential to advance the scaling of
superconducting quantum devices.
