  An integer Quantum Hall effect transition is studied in a modulation doped
p-SiGe sample. In contrast to most examples of such transitions the
longitudinal and Hall conductivities at the critical point are close to 0.5 and
1.5 (e^2/h), the theoretically expected values. This allows the extraction of a
scattering parameter, describing both conductivity components, which depends
exponentially on filling factor. The strong similarity of this functional form
to those observed for transitions into the Hall insulating state and for the
B=0 metal- insulator transition implies a universal quantum critical behaviour
for the transitions. The observation of this behaviour in the integer Quantum
Hall effect, for this particular sample, is attributed to the short-ranged
character of the potential associated with the dominant scatterers.
