  CdTe-based thin film solar cell has been modeled and enumerated with a thin
CuInTe2 (CIT) current booster layer. CdTe-based n-CdS/p-CdTe/p+-CIT/p++-WSe2
heterojunction device has been evaluated for the highest performance. It is
revealed that physical parameters such as thickness, doping, and defects of the
CIT layer have a significant influence on the performance of the CdTe solar
cell. The device shows an efficiency of 37.46% with an open circuit voltage,
VOC of 1.102 V, short circuit current density, JSC of 38.50 mA/cm2, and fill
factor, FF of 88.30%. The use of the photon recycling technique with a
Bragg-reflector with 98% back and 95% front reflectance only provides an
efficiency of ~44.3% with a current of 45.4 mA/cm2. These findings are very
hopeful for the production of an efficient CdTe solar cells in the near future.
