  We report current-induced magnetization reversal in a ferromagnetic
semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared
by molecular beam epitaxy on a p-GaAs(001) substrate. A change in
magneto-resistance that is asymmetric with respect to the current direction is
found with the excitation current of 10^6 A/cm^2. Contributions of both
unpolarized and spin-polarized components are examined, and we conclude that
the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller
magnetization with the spin-polarized tunneling current of 10^5 A/cm^2.
