  High quality single crystals of WTe$_2$ were grown using a Te flux followed
by a cleaning step involving self-vapor transport. The method is reproducible
and yields consistently higher quality single crystals than are typically
obtained via halide assisted vapor transport methods. Magnetoresistance
(MR)values at 9 Tesla and 2 Kelvin as high as 1.75 million \%, nearly an order
of magnitude higher than previously reported for this material, were obtained
on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR
follows a near B$^2$ law (B = 1.95(1)) and, assuming a semiclassical model, the
average carrier mobility for the highest quality crystal was found to be
~167,000 cm$^2$/Vs at 2 K. A correlation of RRR, MR ratio and average carrier
mobility ($\mu_{avg}$) is found with the cooling rate during the flux growth.
