  We propose an all-electric implementation of a precessionally switched
perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based
toggle memory cell where data is written with
voltage-controlled-magnetic-anisotropy (VCMA) without requiring an in-plane
magnetic field. The soft layer of the MTJ is a two-phase
(magnetostrictive/piezoelectric) multiferroic which is electrically stressed to
produce an effective in-plane magnetic field around which the magnetization
precesses to complete a flip when the VCMA voltage pulse duration and the
stress duration are independently adjusted to obtain a high switching
probability. A two-terminal energy-efficient cell, that is compatible with
crossbar architecture and high cell density, is designed.
