  To gain a deeper understanding of the luminescence of multiquantum wells and
the factors affecting it on a microscopic level, cathodoluminescence combined
with scanning transmission electron microscopy and spectroscopy was used to
reveal the luminescence of In0.15Ga0.85N five-period multiquantum wells. The
composition-wave-energy relationship was established in combination with
energy-dispersive X-ray spectroscopy , and the bandgaps of In0.15Ga0.85N and
GaN in multiple quantum wells were extracted by electron energy loss
spectroscopy to understand the features of cathodoluminescence luminescence
spectra. The luminescence differences between different periods of multiquantum
wells and the effects on the luminescence of multiple quantum wells owing to
defects such as composition fluctuation and dislocations were revealed. Our
study establishing the direct correspondence between the atomic structure of
InxGa1-xN multiquantum wells and photoelectric properties, provides useful
information for nitride applications.
