  Magnetic van der Waals (vdW) materials have attracted massive attention
because of their academic interest and application potential for the past few
years. Its main advantage is the intrinsic two-dimensionality, enabling much
smaller devices of novel concepts. One particular exciting direction lies in
the current-driven spin-orbit torque (SOT). Here, we, for the first time,
realize an all vdW three-terminal SOT memory, employing the unique physics
principle of gigantic intrinsic SOT of Fe3GeTe2 (FGT) and the well-known
industry-adopted tunnelling magnetoresistance (TMR) effect. We designed the
device operation procedure and fabricated the FGT/h-BN/FGT vdW heterostructure
as a proof of concept. This device exhibits a classical TMR effect and
unambiguously demonstrates the conception by precise performance as expected:
the magnetic information of the top-FGT is written by current-driven SOT and
read out by TMR separately. The writing and reading current paths are
physically decoupled, enhancing the design and optimization flexibility
substantially and further strengthening the device's endurance naturally. Our
work would prompt more expansive use of vdW magnets for spintronic
applications.
