  Quantum materials, particularly Dirac materials with linearly dispersing
bands, can be effectively tuned by strain-induced lattice distortions leading
to a pseudo-magnetic field that strongly modulates their electronic properties.
Here, we grow kagome magnet FeSn films, consisting of alternatingly stacked
Sn$_2$ honeycomb (stanene) and Fe$_3$Sn kagome layers, on SrTiO$_3$(111)
substrates by molecular beam epitaxy. Using scanning tunneling
microscopy/spectroscopy, we show that the Sn honeycomb layer can be
periodically deformed by epitaxial strain for film thickness below 10 nm,
resulting in differential conductance peaks consistent with Landau levels
generated by a pseudo-magnetic field greater than 1000 T. Our findings
demonstrate the feasibility of strain engineering the electronic properties of
topological magnets at the nanoscale.
