  In this paper, we review the 1/f-type noise properties of nanoelectronic
devices focusing on three demonstrative platforms: resistive switching
memories, graphene nanogaps and single-molecule nanowires. The functionality of
such ultrasmall devices is confined to an extremely small volume, where bulk
considerations on the noise loose their validity: the relative contribution of
a fluctuator heavily depends on its distance from the device bottleneck, and
the noise characteristics are sensitive to the nanometer-scale device geometry
and the details of the mostly non-classical transport mechanism. All these are
reflected by a highly system-specific dependence of the noise properties on the
active device volume (and the related device resitance), the frequency, or the
applied voltage. Accordingly, 1/f-type noise measurements serve as a rich
fingerprint of the relevant transport and noise-generating mechanisms in the
studied nanoelectronic systems. Finally, we demonstrate that not only the
fundamental understanding and the targeted noise suppression is fueled by the
1/f-type noise analysis, but novel probabilistic computing hardware platforms
heavily seek well tailorable nanoelectric noise sources.
