  The thermal interface conductance between Al and Si was simulated by a
non-equilibrium molecular dynamics method. In the simulations, the coupling
between electrons and phonons in Al are considered by using a stochastic force.
The results show the size dependence of the interface thermal conductance and
the effect of electron-phonon coupling on the interface thermal conductance. To
understand the mechanism of interface resistance, the vibration power spectra
are calculated. We find that the atomic level disorder near the interface is an
important aspect of interfacial phonon transport, which leads to a modification
of the phonon states near the interface. There, the vibrational spectrum near
the interface greatly differs from the bulk. This change in the vibrational
spectrum affects the results predicted by AMM and DMM theories and indicates
new physics is involved with phonon transport across interfaces. Keywords:
