  RF-induced micromotion in trapped ion systems is typically minimised or
circumvented to avoid off-resonant couplings for adiabatic processes such as
multi-ion gate operations. Non-adiabatic entangling gates (so-called `fast
gates') do not require resolution of specific motional sidebands, and are
therefore not limited to timescales longer than the trapping period. We find
that fast gates designed for micromotion-free environments have significantly
reduced fidelity in the presence of micromotion. We show that when fast gates
are designed to account for the RF-induced micromotion, they can, in fact,
out-perform fast gates in the absence of micromotion. The state-dependent force
due to the laser induces energy shifts that are amplified by the
state-independent forces producing the micromotion. This enhancement is present
for all trapping parameters and is robust to realistic sources of experimental
error. This result paves the way for fast two-qubit entangling gates on
scalable 2D architectures, where micromotion is necessarily present on at least
one inter-ion axis.
