  Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as
a function of temperature (5 K $-$ 350 K) with polarization resolution and
excitation of several laser energies. An unexpected temperature dependence of
the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$)
modes with the temperature-induced blueshift in the low-temperature limit is
observed. The low-temperature quenching of a mode $\omega_1$ (134 cm$^{-1}$)
and the emergence of a new mode at approx. 184 cm$^{-1}$, labeled Z, is
reported. The optical anisotropy of the RS in HfS$_2$ is also reported, which
is highly susceptible to the excitation energy. The apparent quenching of the
A$_{\textrm{1g}}$ mode at $T$=5 K and of the E$_{\textrm{g}}$ mode at $T$=300 K
in the RS spectrum excited with 3.06~eV excitation is also observed. We discuss
the results in the context of possible resonant character of light-phonon
interactions. Analyzed is also a possible effect of the iodine molecules
intercalated in the van der Waals gaps between neighboring HfS$_2$ layers,
which inevitably result from the growth procedure.
