  The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs
double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature
dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This
temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 --
3.5) for our samples, and the electron density is on a 'insulating' side of the
so-called B = 0 2D metal--insulator transition. We show that the observed
localization and Landau quantization is due to the Sigma_xy(T)anomalous
T-dependence.
