  A new method based on modified optical Bloch equations is proposed for
studying resonant tunneling in semiconductor heterostructures. The method
manifestly takes account of electrons' statistics, which enables to investigate
the influence of the Pauli principle on resonant tunneling in presence of
inelastic scattering. Being applied to evaluation of the resonant current in
semiconductor heterostructures, our approach predicts considerable deviations
from the one-electron picture.
