  Kagome lattices have garnered substantial interest because their band
structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$
(R = rare earth) compounds are particularly interesting because of the
existence of large intrinsic anomalous Hall effect (AHE) which originates from
the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an
outstanding candidate for realizing the high-temperature quantum anomalous Hall
effect. The growth of RMn$_6$Sn$_6$ thin films is beneficial for both
fundamental research and potential applications. However, most of the studies
on RMn$_6$Sn$_6$ have focused on bulk crystals so far, and the synthesis of
RMn$_6$Sn$_6$ thin films has not been reported so far. Here we report the
atomic layer molecular beam epitaxy growth, structural and magnetic
characterizations, and transport properties of ErMn$_6$Sn$_6$ and
TbMn$_6$Sn$_6$ thin films. It is especially noteworthy that TbMn$_6$Sn$_6$ thin
films have out-of-plane magnetic anisotropy, which is important for realizing
the quantum anomalous Hall effect. Our work paves the avenue toward the control
of the AHE using devices patterned from RMn$_6$Sn$_6$ thin films.
