  We have fabricated a sub-micron-sized structure consisting of an InAs-based
2DEG, two narrow Nb leads and a gate, where the indirect ballistic transport
between the non-oppositely superconducting contacts can be controlled by the
voltage applied to the gate. This new kind of tuneable junction can be used for
applications and allows several fundamental questions related to the transport
mechanism to be studied. First results of experiments carried out in this
respect are presented.
