  A two-band model involving the A- and B-valence bands was adopted to analyze
the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO.
The hole transport characteristics (mobilities, and effective Hall factor) are
calculated using the ``relaxation time approximation'' as a function of
temperature. It is shown that the lattice scattering by the acoustic
deformation potential is dominant. In the calculation of the scattering rate
for ionized impurity mechanism, the activation energy of 100 or 170 meV is used
at different compensation ratios between donor and acceptor concentrations. The
theoretical Hall mobility at acceptor concentration of $7 \times 10^{18}$
cm$^3$ is about 70 cm$^2$V$^{-1}$s$^{-1}$ with the activation energy of 100 meV
and the compensation ratio of 0.8 at 300 K. We also found that the compensation
ratios conspicuously affected the Hall mobilities.
