  Band edge and energy levels of truncated pyramidal In_x Ga_(1-x) As/GaAs
(001) quantum dots are studied by single-band effective mass approach, and the
dependence to stoichiometric percentages is investigated. It is shown that
enhancement of indium percentage decreases the band gap and the recombination
energy of electrons and holes. Our principal result is that decrease of
recombination energy and band gap is nonlinear and the slopes are different
band gap and e-h recombination energy. In addition, it is proved that strain
tensor is diagonal along z-axis and the absolute value of the components gets
larger by more indium inclusion. Our results appear to be in very good
consonance with similar studies.
  Keywords: quantum dot, band structure, strain tensor, indium percentage.
