  We performed the angle dependent magnetoresistance (MR), Hall effect
measurements, the temperature dependent magneto-thermoelectric power (TEP) S(T)
measurements, and the first-principles calculations to study the electronic
properties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to be
electronically two-dimensional (2D). There are some interesting findings about
Td-MoTe2: (1) A scaling approach
{\epsilon}{\theta}=(sin2{\theta}+{\gamma}-2cos2{\theta})1/2 is applied, where
{\theta} is the magnetic field angle with respect to the c axis of the crystal
and {\gamma} is the mass anisotropy. Unexpectedly, the electronically 3D
character with {\gamma} as low as 1.9 is observed in Td-MoTe2; (2) The possible
Lifshitz transition and the following electronic structure change can be
verified around T~150 K and T~60 K, which is supported by the evidence of the
slop changing of the temperature dependence of TEP, the carrier density
extracted from Hall resistivity and the onset temperature of {\gamma} obtained
from the MR measurements. The extremely large MR effect in Td-MoTe2 could
originate from the combination of the electron-hole compensation and a
particular orbital texture on the electron pocket, which is supported by the
calculations of electronic structure. Our results may provide a general scaling
relation for the anisotropic MR and help to recognize the origins of the MR
effect in other systems, such as the Weyl semimetals and the Dirac ones.
