  Several semiconductor quantum dot techniques have been investigated for the
generation of entangled photon pairs. Among the other techniques, droplet
epitaxy enables the control of the shape, size, density, and emission
wavelength of the quantum emitters. However, the fraction of the
entanglement-ready quantum dots that can be fabricated with this method is
still limited to around 5%, and matching the energy of the entangled photons to
atomic transitions (a promising route towards quantum networking) remains an
outstanding challenge.
  Here, we overcome these obstacles by introducing a modified approach to
droplet epitaxy on a high symmetry (111)A substrate, where the fundamental
crystallization step is performed at a significantly higher temperature as
compared to previous reports. Our method drastically improves the yield of
entanglement-ready photon sources near the emission wavelength of interest,
which can be as high as 95% due to the low values of fine structure splitting
and radiative lifetime, together with the reduced exciton dephasing offered by
the choice of GaAs/AlGaAs materials. The quantum dots are designed to emit in
the operating spectral region of Rb-based slow-light media, providing a viable
technology for quantum repeater stations.
