  Epitaxial graphene grown on SiC by the confinement controlled sublimation
method is reviewed, with an emphasis on multilayer and monolayer epitaxial
graphene on the carbon face of 4H-SiC and on directed and selectively grown
structures under growth-arresting or growth-enhancing masks. Recent
developments in the growth of templated graphene nanostructures are also
presented, as exemplified by tens of micron long very well confined and
isolated 20-40nm wide graphene ribbons. Scheme for large scale integration of
ribbon arrays with Si wafer is also presented.
