  Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy
and characterized by transmission and scanning electron microscopy, and x-ray
diffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001)
oriented single crystal. The subsequent Al film grows almost 111 oriented in a
fibre texture although the underlying Fe3Si is exactly (001) oriented. The
growth in this orientation is triggered by a thin transition region which is
formed at the Fe3Si/Al interface. In the end after the growth of the second
Fe3Si layer on top of the Al the final properties of the whole stack depend on
the substrate temperature T_S during deposition of the last film. The upper
Fe3Si films are mainly 110 oriented although they are poly-crystalline. At
lower T_S, around room temperature, all the films retain their original
structural properties.
