  The room temperature (300 K) electronic structure of pulsed laser deposited
LaNi_{x}V_{1-x}O_{3} thin films have been demonstrated. The substitution of
early-transition metal (TM) V in LaVO_{3} thin films with late-TM Ni leads to
the decreasing in out-of-plane lattice parameter. Doping of Ni does not alter
the formal valence state of Ni and V in LaNi_{x}V_{1-x}O_{3} thin films,
divulging the absence of carrier doping into the system. The valence band
spectrum is observed to comprise of incoherent structure owing to the localized
V 3d band along with the coherent structure at Fermi level. With increase in Ni
concentration, the weight of the coherent feature increases, which divulges its
origin to the Ni 3d-O 2p hybridized band. The shift of Ni 3d-O 2p hybridized
band towards higher energy in Ni doped LaVO_{3} films compared to the LaNiO_{3}
film endorses the modification in ligand to metal charge transfer (CT) energy.
The Ni doping in Mott-Hubbard insulator LaVO_{3} leads to the closure of
Mott-Hubbard gap by building of spectral weight that provides the delocalized
electrons for conduction. A transition from bandwidth control Mott-Hubbard
insulator LaVO_{3} to negative CT metallicity character in LaNiO_{3} film is
observed. The study reveals that unlike in Mott-Hubbard insulators where the
strong Coulomb interaction between the 3d electrons decides the electronic
structure of the system, CT energy can deliver an additional degree of freedom
to optimize material properties in Ni doped LaVO_{3} films.
