  An original modification of the standard Pulse Laser Deposition (PLD) method
for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at
low substrate temperature is proposed. This preparation method does not demand
any further post-deposition annealing treatment of the grown films. The
developed method allows to grow thin films at low substrate temperature that
prevents them from the considerable loss of their intrinsic electrical and
optical properties. The influence of deposition parameters on the electrical
and optical parameters of the undoped and the indium doped ZnO thin films is
also analysed.
