  Pixel sensors using 8" CMOS processing technology have been designed and
characterized offering the benefits of industrial sensor fabrication, including
large wafers, high throughput and yield, as well as low cost. The pixel sensors
are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano.
The technology provides multiple metal and polysilicon layers, as well as
metal-insulator-metal capacitors that can be employed for AC-coupling and
redistribution layers. Several prototypes were fabricated and are characterized
with minimum ionizing particles before and after irradiation to fluences up to
1.1 $\times$ 10$^{15}$ n$_{\rm eq}$ cm$^{-2}$. The CMOS-fabricated sensors
perform equally well as standard pixel sensors in terms of noise and hit
detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a
3.2 GeV electron beam before irradiation.
