  The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however
there is still a disagreement on the source of its magnetism. The divergences
arise from the results indicating that the holes mediated ferromagnetism reside
in the valence band or the impurity band. Full understanding of character of
the Mn states in GaAs can bring the increase of (Ga,Mn)As Curie temperature. In
this paper we verify the ellipsometric results and compare with more precise
photoreflectance method which gives a new insight into the interactions of Mn
impurity states with GaAs valence band. Indeed, $E_{1}$ and
$E_{1}$+${\Delta}_{1}$ inter-band transition energies for highly doped and
annealed (Ga,Mn)As epitaxial layers have not confirmed the interaction between
detached Mn impurity band and the valence band. Thus, the description with
merged Mn states and GaAs valence band is in agreement with our results. Our
findings are supported by the high resolution transmission microscopy and
magnetization measurements.
