  The growth mechanisms of MgB2 films obtained by different methods on various
substrates are compared via a detailed cross-sectional scanning electron
microscopy (SEM) study. The analyzed films include (a) samples obtained by an
ex-situ post-anneal at 900 degree of e-beam evaporated boron in the presence of
an Mg vapor (exhibiting bulk-like Tc0 about 38.8 K), (b) samples obtained by
the same ex-situ 900 degree anneal of pulsed laser deposition (PLD)-grown Mg+B
precursors (exhibiting Tc0 ~ 25 K), and (c) films obtained by a low-temperature
(600 - 630 degree) in-situ anneal of PLD-grown Mg+B precursors (with Tc0 about
24 K). A significant oxygen contamination was also present in films obtained
from a PLD-grown precursors. On the other hand, it is clearly observed that the
films obtained by the high-temperature reaction of e-beam evaporated B with Mg
vapor are formed by the nucleation of independent MgB2 grains at the film
surface, indicating that this approach may not be suitable to obtain smooth and
(possibly) epitaxial films.
