  We report the detection of a gate-tunable kinetic inductance in a hybrid
InAs/Al nanowire. For this purpose, we have embedded the nanowire into a
quarter-wave coplanar waveguide resonator and measured the resonance frequency
of the circuit. We find that the resonance frequency can be changed via the
gate voltage that controls the electron density of the proximitized
semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory,
we extract the gate dependence of the normal state conductivity of the
nanowire, as well as its superconducting gap. Our measurements complement
existing characterization methods for hybrid nanowires and provide a new and
useful tool for gate-controlled superconducting electronics.
