  Numerical simulation of switching process of high-voltage silicon
photodiodes, phototransistors and photothyristors those triggered-on
homogeneously over the area by picosecond laser pulses, has been performed for
the first time. The analysis of results allowed to obtain "empirical"
relationship between key parameters of switches (energy of control pulses, a
radiation absorption coefficient, the area of structures) and parameters those
characterizing the switching process in a circuit with the resistive load. For
some of these relationship the approximate analytical formulas which seem to be
quite adequate to the simulation results has been deduced. It is noted that
distinctions between switching processes in structures of the three different
types become apparent only at long duration of voltage pulses at a final stage
when the blocking capability of photodiodes and phototransistors is recovered.
