  We propose a defect-to-edge topological quantum quench protocol that can
efficiently inject electric charge from defect-core states into a chiral edge
current of an induced Chern insulator. The initial state of the system is
assumed to be a Mott insulator, with electrons bound to topological defects
that are pinned by disorder. We show that a "critical quench" to a Chern
insulator mass of order the Mott gap shunts charge from defects to the edge,
while a second stronger quench can trap it there and boost the edge velocity,
creating a controllable current. We apply this idea to a skyrmion charge in the
$\nu = 0$ quantum Hall antiferromagnet in graphene, where the quench into the
Chern insulator could be accomplished via Floquet driving with circularly
polarized light.
