  Magnetic tunnel junctions (MTJs) interconnected via a continuous
ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG)
logic. The MTJs are biased independently and show magnetoelectric response
under spin transfer torque. The electrical control of these devices paves the
way to future spin logic devices based on domain wall (DW) motion. In
particular, it is a significant step toward the realization of a majority gate,
even though further downscaling may be required. To our knowledge, this is the
first fabrication of a cross-shaped free layer shared by several perpendicular
MTJs. The fabrication process can be generalized to any geometry and any number
of MTJs. Thus, this framework can be applied to other spin logic concepts based
on magnetic interconnect. Moreover, it allows exploration of spin dynamics for
logic applications
