  Here we propose and analyze the behavior of a FET--like switching device, the
Mott transition field effect transistor, operating on a novel principle, the
Mott metal--insulator transition. The device has FET-like characteristics with
a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is
feasible down to nanoscale dimensions. Implementation with a class of organic
charge transfer complexes is proposed.
