  We propose a novel analog memory device utilizing the gigantic magnetic Weyl
semimetal (MWSM) domain wall (DW) magnetoresistance. We predict that the
nucleation of domain walls between contacts will strongly modulate the
conductance and allow for multiple memory states, which has been long
sought-after for use in magnetic random access memories or memristive
neuromorphic computing platforms. We motivate this conductance modulation by
analyzing the electronic structure of the helically-magnetized MWSM
Hamiltonian, and report tunable flat bands in the direction of transport in a
helically-magnetized region of the sample for Bloch and Neel-type domain walls
via the onset of a local axial Landau level spectrum within the bulk of the
superlattice. We show that Bloch devices also provide means for the generation
of chirality-polarized currents, which provides a path towards nanoelectronic
utilization of chirality as a new degree of freedom in spintronics.
