  Self-consistent computations of the potential profile in complex
semiconductor heterostructures can be successfully applied for comprehensive
simulation of the gain and the absorption spectra, for the analysis of the
capture, escape, tunneling, recombination, and relaxation phenomena and as a
consequence it can be used for studying dynamical behavior of semiconductor
lasers and amplifiers. However, many authors use non-entirely correct ways for
the application of the method. In this paper the versatile model is proposed
for the investigation, optimization, and the control of parameters of the
semiconductor lasers and optical amplifiers which may be employed for the
creation of new generations of the high-density photonic systems for the
information processing and data transfer, follower and security arrangements.
The model is based on the coupled Schredinger, Poisson and drift-diffusion
equations which allow to determine energy quantization levels and wave
functions of charge carriers, take into account built-in fields, and to
investigate doped MQW structures and those under external electric fields
influence. In the paper the methodology of computer realization based on our
model is described. Boundary conditions for each equation and consideration of
the convergence for the method are included. Frequently encountered in practice
approaches and errors of self-consistent computations are described. Domains of
applicability of the main approaches are estimated. Application examples of the
method are given. Some of regularities of the results which were discovered by
using self-consistent method are discussed. Design recommendations for
structure optimization in respect to managing some parameters of AMQW
structures are given.
