  Using the Monte Carlo method, we have studied the pulsed laser deposition
process at the sub-monolayer regime. In our simulations, dissociation of an
atom from a cluster is incorporated. Our results indicate that the pulsed laser
deposition resembles molecular beam epitaxy at very low intensity, and that it
is characteristically different from molecular beam epitaxy at higher
intensity. We have also obtained the island size distributions. The scaling
function for the island size distribution for pulsed laser deposition is
different from that of molecular beam epitaxy.
