  We present a fabrication method for reliably and reproducibly forming
electrical contacts to 2D materials, based on the tri-layer resist system. We
demonstrate the applicability of this method for epitaxial graphene on silicon
carbide (epigraphene) and the transition metal dichalcogenides (TMDCs)
molybdenum disulfide ($MoS_2$). For epigraphene, the specific contact
resistances are of the order of $\rho_c$ ~ $50$ $\Omega\mu m$, and follow the
Landauer quantum limit, $\rho_c \propto n^{-1/2}$, with $n$ being the carrier
density of graphene. For $MoS_2$ flakes, our edge contacts enable field effect
transistors (FET) with ON/OFF ratio of $> 10^6$ at room temperature ( $> 10^9$
at cryogenic temperatures). The fabrication route here demonstrated allows for
contact metallization using thermal evaporation and also by sputtering, giving
an additional flexibility when designing electrical interfaces, which is key in
practical devices and when exploring the electrical properties of emerging
materials.
