  We report on a large improvement in the wetting of Al2O3 thin films grown by
un-seeded atomic layer deposition on monolayer graphene, without creating point
defects. This enhanced wetting is achieved by greatly increasing the nucleation
density through the use of polar traps induced on the graphene surface by an
underlying metallic substrate. The resulting Al2O3/graphene stack is then
transferred to SiO2 by standard methods.
