  Silicon has dominated the microelectronics industry for the last 50 years.
With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is
believed that silicon can become an excellent host material for an entirely new
generation of devices that operate under the laws of quantum mechanics [1}.
Semiconductor nanowires however, offer huge potential as the next building
blocks of nano-devices due to their one-dimensional structure and properties
[2]. We describe a fabrication process to prepare doped vapor-liquid-solid
(VLS) grown silicon nanowire samples in a 2- and 4-terminal measurement setup
for electrical characterisation.
