  Results in this paper present an in-depth study of time resolution for active
pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement
techniques employed include Backside- and Edge-TCT configurations, in addition
to electrons from a $^{90}\mathrm{Sr}$ source. A sample irradiated to $5\cdot
10^{14}\,\mathrm{n}_\mathrm{eq}/\mathrm{cm}^2$ was used to study the effect of
radiation damage. Timing performance was evaluated for the entire pixel matrix
and with positional sensitivity within individual pixels as a function of the
deposited charge. Time resolution obtained with TCT is seen to be uniform
throughout the pixel's central region with approx. $220\,\mathrm{ps}$ at
$12\,\mathrm{ke}^-$ of deposited charge, degrading at the edges and lower
values of deposited charge. $^{90}\mathrm{Sr}$ measurements show a slightly
worse time resolution as a result of delayed events coming from the peripheral
areas of the pixel.
