  We report measurements of Shubnikov-de Haas oscillations in the giant Rashba
semiconductor BiTeCl under applied pressures up to ~2.5 GPa. We observe two
distinct oscillation frequencies, corresponding to the Rashba-split inner and
outer Fermi surfaces. BiTeCl has a conduction band bottom that is split into
two sub-bands due to the strong Rashba coupling, resulting in two
spin-polarized conduction bands as well as a Dirac point. Our results suggest
that the chemical potential lies above this Dirac point, giving rise to two
Fermi surfaces. We use a simple two-band model to understand the pressure
dependence of our sample parameters. Comparing our results on BiTeCl to
previous results on BiTeI, we observe similar trends in both the chemical
potential and the Rashba splitting with pressure.
