  The temperature dependent energy transfer rate between charge carriers and
lattice has been experimentally investigated in ferromagnetic semiconductors.
Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had
manganese concentrations x=3.7 % and 4.0 %. Curie temperatures estimated from
temperatures of peak resistivities were 60 K and 62 K, respectively.
