  We studied switchable photovoltaic and photo-diode characteristics of Pt
(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3 LaNiO3 (Pt BSFHO LNO) heterostructures integrated
on Si (100). The directions of photocurrent (JSC) and rectification are found
to be reversibly switchable after applying external poling voltages. In
pristine state, metal-ferroelectric-metal capacitor Pt BSFHO LNO shows JSC 32
microAmp cm2 and VOC 0.04 V, which increase to maximum value of JSC 303 ( 206)
microAmp cm2 and VOC 0.32 (0.26) V after upward (downward) poling at 8 V. We
believe that Schottky barrier modulation by polarization flipping at Pt BSFHO
interface could be a main driving force behind switchable photovoltaic and
rectifying diode characteristics of Pt BSFHO LNO heterostructures.
