  High quality single crystals of Bi2Se3 were grown using a modified Bridgman
technique, the detailed study were carried out using Raman spectroscopy and
characterized by Laue diffraction and high resolution transmission electron
microscopy. Polarized Raman scattering measurements were also carried out, and
both the A1g and A2g phonon modes showed strong polarization effect, which is
consistent with the theoretical prediction. The temperature dependent study (in
the temperature range 83 K to 523 K of Raman active modes were reported and
observed to follow a systematic red shift. The frequency of these phonon modes
are found to vary linearly with temperature and can be explained by first order
temperature co-efficient. The temperature co-efficient for A11g, E2g and A21g
modes were estimated to be -1.44*10-2, -1.94*10-2 and -1.95*10-2cm-1/K
respectively.
