  Annealing can increase the Curie temperature and net magnetization in
uncapped (Ga,Mn)As films, effects that are suppressed when the films are capped
with GaAs. Previous polarized neutron reflectometry (PNR) studies of uncapped
(Ga,Mn)As revealed a pronounced magnetization gradient that was reduced after
annealing. We have extended this study to (Ga,Mn)As capped with GaAs. We
observe no increase in Curie temperature or net magnetization upon annealing.
Furthermore, PNR measurements indicate that annealing produces minimal
differences in the depth-dependent magnetization, as both as-grown and annealed
films feature a significant magnetization gradient. These results suggest that
the GaAs cap inhibits redistribution of interstitial Mn impurities during
annealing.
