  We studied the effect of low energy (30 keV) ionic implantation of Ga+ in the
direction parallel to the graphene planes (perpendicular to c-axis) in oriented
graphite ribbons with widths around 500 nm. Our experiments have reproducibly
shown a reduction of electrical resistance upon implan- tation consistent with
the occurrence of ionic channeling in our devices. Our results allow for new
approaches in the modulation of the charge carrier concentration in mesoscopic
graphite.
