  A theory is developed for the density and temperature dependent carrier
conductivity in doped three-dimensional (3D) Dirac materials focusing on
resistive scattering from screened Coulomb disorder due to random charged
impurities (e.g., dopant ions and unintentional background impurities). The
theory applies both in the undoped intrinsic ("high-temperature", $T \gg T_F$)
and the doped extrinsic ("low-temperature", $T \ll T_F$) limit with analytical
scaling properties for the carrier conductivity obtained in both regimes, where
$T_F$ is the Fermi temperature corresponding to the doped free carrier density
(electrons or holes). The scaling properties describing how the conductivity
depends on the density and temperature can be used to establish the Dirac
nature of 3D systems through transport measurements. We also consider the
temperature dependent conductivity limited by the acoustic phonon scattering in
3D Dirac materials. In addition, we theoretically calculate and compare the
single particle relaxation time $\tas$, defining the quantum level broadening,
and the transport scattering time $\tat$, defining the conductivity, in the
presence of screened charged impurity scattering. A critical quantitative
analysis of the $\tat/\tas$ results for 3D Dirac materials in the presence of
long-range screened Coulomb disorder is provided.
