  Electron-spin relaxation at different surfaces of p-doped GaAs is
investigated by means of spin, time and energy resolved 2-photon photoemission.
These results are contrasted with bulk results obtained by time-resolved
Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus
spin-flip mechanism. Due to the reduced hole density in the band bending region
at the (100) surface the spin-relaxation time increases over two orders of
magnitude towards lower energies. At the flat-band (011) surface a constant
spin relaxation time in agreement with our measurements and calculations for
bulk GaAs is obtained.
