  We define single electron spin qubits in a silicon MOS double quantum dot
system. By mapping the qubit resonance frequency as a function of gate-induced
electric field, the spectrum reveals an anticrossing that is consistent with an
inter-valley spin-orbit coupling. We fit the data from which we extract an
inter-valley coupling strength of 43 MHz. In addition, we observe a narrow
resonance near the primary qubit resonance when we operate the device in the
(1,1) charge configuration. The experimental data is consistent with a
simulation involving two weakly exchanged-coupled spins with a g-factor
difference of 1 MHz, of the same order as the Rabi frequency. We conclude that
the narrow resonance is the result of driven transitions between the T- and T+
triplet states, using an ESR signal of frequency located halfway between the
resonance frequencies of the two individual spins. The findings presented here
offer an alternative method of implementing two-qubit gates, of relevance to
the operation of larger scale spin qubit systems.
