  We report on electronic transport in dual-gate, artificially stacked bilayer
graphene field effect transistors (BiGFETs) fabricated from large-area chemical
vapor deposited (CVD) graphene. The devices show enhanced tendency to current
saturation, which leads to reduced minimum output conductance values. This
results in improved intrinsic voltage gain of the devices when compared to
monolayer graphene FETs. We employ a physics based compact model originally
developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the
observed phenomenon. The improvement in current saturation may be attributed to
increased charge carrier density in the channel and thus reduced saturation
velocity due to carrier-carrier scattering.
