  The residual stress induced in assembly is a common concern in electronic
packaging. The mismatch in coefficient of thermal expansion between
borosilicate glass and silicon, upon temperature variation, generates an
internal stress state. This affects important characteristics of
microelectromechanical devices or constituent elements. Such as self frequence
or stiffness. Stresses caused by thermal expansion coefficients mismatch of
anodically bonded glass and silicon samples are studied in this paper. Stress
calculation based on lamination theory is presented. Usage examples of such
calculations are described. For bonded silicon and LK-5 glass several results
of calculations are presented. Stress distribution in bonded silicon and glass
of several thicknesses is evaluated. Stress distribution in bonded
glass-silicon-glass structure is evaluated. Bonded silicon surface stress
dependence of glass to silicon wafer thickness ratio is evaluated. Experimental
study of thermal mismatch stress in glass based on birefringence phenomenon was
conducted. It's results are presented in this paper. Keywords: anodic bonding,
field assisted bonding, thermal expansion, stress.
