  Single electron spins in semiconductor quantum dots (QDs) are a versatile
platform for quantum information processing, however controlling decoherence
remains a considerable challenge. Recently, hole spins have emerged as a
promising alternative. Holes in III-V semiconductors have unique properties,
such as strong spin-orbit interaction and weak coupling to nuclear spins, and
therefore have potential for enhanced spin control and longer coherence times.
Weaker hyperfine interaction has already been reported in self-assembled
quantum dots using quantum optics techniques. However, challenging fabrication
has so far kept the promise of hole-spin-based electronic devices out of reach
in conventional III-V heterostructures. Here, we report gate-tuneable hole
quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli
spin blockade and electrical control of single hole spins. The devices are
fully tuneable between hole and electron QDs, enabling direct comparison
between the hyperfine interaction strengths, g-factors and spin blockade
anisotropies in the two regimes.
