Daily Papers

We introduce DOPE, the first method to detect and estimate whole-body 3D human poses, including bodies, hands and faces, in the wild. Achieving this level of details is key for a number of applications that require understanding the interactions of the people with each other or with the environment. The main challenge is the lack of in-the-wild data with labeled whole-body 3D poses. In previous work, training data has been annotated or generated for simpler tasks focusing on bodies, hands or faces separately. In this work, we propose to take advantage of these datasets to train independent experts for each part, namely a body, a hand and a face expert, and distill their knowledge into a single deep network designed for whole-body 2D-3D pose detection. In practice, given a training image with partial or no annotation, each part expert detects its subset of keypoints in 2D and 3D and the resulting estimations are combined to obtain whole-body pseudo ground-truth poses. A distillation loss encourages the whole-body predictions to mimic the experts' outputs. Our results show that this approach significantly outperforms the same whole-body model trained without distillation while staying close to the performance of the experts. Importantly, DOPE is computationally less demanding than the ensemble of experts and can achieve real-time performance. Test code and models are available at https://europe.naverlabs.com/research/computer-vision/dope.

We introduce Diff-DOPE, a 6-DoF pose refiner that takes as input an image, a 3D textured model of an object, and an initial pose of the object. The method uses differentiable rendering to update the object pose to minimize the visual error between the image and the projection of the model. We show that this simple, yet effective, idea is able to achieve state-of-the-art results on pose estimation datasets. Our approach is a departure from recent methods in which the pose refiner is a deep neural network trained on a large synthetic dataset to map inputs to refinement steps. Rather, our use of differentiable rendering allows us to avoid training altogether. Our approach performs multiple gradient descent optimizations in parallel with different random learning rates to avoid local minima from symmetric objects, similar appearances, or wrong step size. Various modalities can be used, e.g., RGB, depth, intensity edges, and object segmentation masks. We present experiments examining the effect of various choices, showing that the best results are found when the RGB image is accompanied by an object mask and depth image to guide the optimization process.

This study systematically investigates the photoconductive properties of low-temperature-grown Beryllium (Be)-doped InGaAs/InAlAs strain-balanced superlattices (SLs) grown by molecular beam epitaxy under stationary growth conditions on semi-insulating InP:Fe substrates. The stationary growth approach enabled precise control over lateral gradients in layer strain, composition, and thickness across a single wafer, while strain-balancing facilitated pseudomorphic growth to explore a wide range of structural parameters, providing a robust platform to study their influence on photoconductive performance. Structural characterization confirmed high crystalline quality and smooth surface morphology in all samples. Time-resolved pump-probe spectroscopy revealed subpicosecond carrier lifetimes, validating the effectiveness of strain balancing and Be doping in tuning ultrafast recombination dynamics. Hall effect measurements supported by 8-band k.p modeling revealed enhanced carrier mobility in strain-balanced SLs compared to lattice-matched structures, primarily due to reduced electron and hole effective masses and stronger quantum confinement. Additionally, optical absorption under 1550 nm excitation showed improved absorption coefficients for the strain-balanced structure, consistent with the reduction in bandgap energy predicted by theoretical modeling, thereby enhancing photon-to-carrier conversion efficiency. Furthermore, transmission electron microscopy provided first-time evidence of significant Be-induced interdiffusion at the strained SL interfaces, an important factor influencing carrier transport and dynamics. These findings position low-temperature-grown Be-doped InGaAs/InAlAs strain-balanced SLs as promising materials for high-performance broadband THz photoconductive detectors operating at telecom-compatible wavelengths.