Ultraviolet enhanced Si-photodetector using p-NiO films
Jeong M. Choi, Seongil Im
We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2004.09.152
12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Hole concentration
Heterojunctions
Choi, J. M., & Im, S. (2005). Ultraviolet enhanced Si-photodetector using p-NiO films. Applied Surface Science, 244(1-4), 435-438. https://doi.org/10.1016/j.apsusc.2004.09.152
Choi, Jeong M. ; Im, Seongil. / Ultraviolet enhanced Si-photodetector using p-NiO films. In: Applied Surface Science. 2005 ; Vol. 244, No. 1-4. pp. 435-438.
@article{02a850196d144a559159713ecad713ae,
title = "Ultraviolet enhanced Si-photodetector using p-NiO films",
abstract = "We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).",
author = "Choi, {Jeong M.} and Seongil Im",
doi = "10.1016/j.apsusc.2004.09.152",
journal = "Applied Surface Science",
Choi, JM & Im, S 2005, 'Ultraviolet enhanced Si-photodetector using p-NiO films', Applied Surface Science, vol. 244, no. 1-4, pp. 435-438. https://doi.org/10.1016/j.apsusc.2004.09.152
Ultraviolet enhanced Si-photodetector using p-NiO films. / Choi, Jeong M.; Im, Seongil.
In: Applied Surface Science, Vol. 244, No. 1-4, 15.05.2005, p. 435-438.
T1 - Ultraviolet enhanced Si-photodetector using p-NiO films
AU - Choi, Jeong M.
AU - Im, Seongil
N2 - We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).
AB - We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).
U2 - 10.1016/j.apsusc.2004.09.152
DO - 10.1016/j.apsusc.2004.09.152
JO - Applied Surface Science
JF - Applied Surface Science
Choi JM, Im S. Ultraviolet enhanced Si-photodetector using p-NiO films. Applied Surface Science. 2005 May 15;244(1-4):435-438. https://doi.org/10.1016/j.apsusc.2004.09.152
10.1016/j.apsusc.2004.09.152